JP2009111005A - 耐腐食性積層セラミックス部材 - Google Patents
耐腐食性積層セラミックス部材 Download PDFInfo
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- JP2009111005A JP2009111005A JP2007278774A JP2007278774A JP2009111005A JP 2009111005 A JP2009111005 A JP 2009111005A JP 2007278774 A JP2007278774 A JP 2007278774A JP 2007278774 A JP2007278774 A JP 2007278774A JP 2009111005 A JP2009111005 A JP 2009111005A
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- 239000000919 ceramic Substances 0.000 title claims abstract description 210
- 230000007797 corrosion Effects 0.000 title claims abstract description 76
- 238000005260 corrosion Methods 0.000 title claims abstract description 76
- 239000000758 substrate Substances 0.000 claims abstract description 138
- 239000010410 layer Substances 0.000 claims abstract description 86
- 230000001681 protective effect Effects 0.000 claims abstract description 64
- 239000011241 protective layer Substances 0.000 claims abstract description 50
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 27
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 20
- 238000007650 screen-printing Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 10
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- 238000005304 joining Methods 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 238000007750 plasma spraying Methods 0.000 claims description 8
- 229940105963 yttrium fluoride Drugs 0.000 claims description 5
- RBORBHYCVONNJH-UHFFFAOYSA-K yttrium(iii) fluoride Chemical compound F[Y](F)F RBORBHYCVONNJH-UHFFFAOYSA-K 0.000 claims description 5
- 239000007789 gas Substances 0.000 description 29
- 239000010408 film Substances 0.000 description 19
- 239000004065 semiconductor Substances 0.000 description 11
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 11
- 229910052721 tungsten Inorganic materials 0.000 description 11
- 239000010937 tungsten Substances 0.000 description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 10
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 229910021529 ammonia Inorganic materials 0.000 description 5
- 239000012299 nitrogen atmosphere Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 238000007689 inspection Methods 0.000 description 4
- 230000009545 invasion Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
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Abstract
【解決手段】 少なくとも、セラミックス支持基板と、該セラミックス支持基板上に形成された電極層と、該電極層に接続された給電部材と、前記電極層を覆うように前記セラミックス支持基板上に形成された電気絶縁性保護層とを備えたセラミックス部材であって、前記セラミックス支持基板の前記電極層が形成された側の面に、前記セラミックス支持基板上に形成された前記電気絶縁性保護層に接するようにセラミックス保護基板が接合されたものであることを特徴とする耐腐食性積層セラミックス部材。
【選択図】 図1
Description
ここで、図1〜6は本発明に係る耐腐食性積層セラミックス部材の例を示した断面図である。
外径300mm厚さ10mmの窒化アルミニウムのセラミックス支持基板に加熱ヒーター用電極としてタングステンペーストをスクリーン印刷法によって塗布し、窒素雰囲気中、1700℃の高温下にてタングステン電極の焼付けを行い接合し、セラミックス支持基板上に電極層を形成させ、該電極層に給電部材を接続した。そして、その電極層を覆うように塩化アルミニウムとアンモニアを1000℃にて反応させて窒化アルミニウムからなる電気絶縁性保護層を50μm形成させ、さらにセラミックス支持基板の前記電極層が形成された側の面に、外径300mm厚さ5mmの窒化アルミニウムからなるセラミックス保護基板を前記電気絶縁性保護層に接するように接合させて図1(A)のような耐腐食性積層セラミックス部材を作製した。
外径300mm厚さ10mmの窒化アルミニウムのセラミックス支持基板に加熱ヒーター用電極層としてタングステンペーストをスクリーン印刷法にて塗布し、窒素雰囲気中、1700℃の高温下にてタングステン電極の焼付けを行い接合し、セラミックス支持基板上に電極層を形成させ、該電極層に給電部材を接続した。そして、その電極層を覆うように塩化アルミニウムとアンモニアを1000℃にて反応させて窒化アルミニウムからなる電気絶縁性保護層を10μm積層させ、さらにそのセラミックス支持基板の前記電極層が形成された側の面に、外径310mm厚さ5mmの窒化アルミニウムからなるセラミックス保護基板を前記電気絶縁性保護層に接するとともに、前記セラミックス支持基板の側面を覆うように接合させて図2(B)のような耐腐食性積層セラミックス部材を作製した。
外径300mm厚さ10mmの窒化アルミニウムのセラミックス支持基板に加熱ヒーター用電極層としてタングステンペーストをスクリーン印刷法にて塗布し、窒素雰囲気中、1700℃の高温下にてタングステン電極の焼付けを行い接合し、セラミックス支持基板上に電極層を形成させ、該電極層に給電部材を接続した。そして、その電極層を覆うように塩化アルミニウムとアンモニアを1000℃にて反応させて窒化アルミニウムからなる電気絶縁性保護層を20μm形成させ、さらにそのセラミックス支持基板の前記電極層が形成された側の面に窒化アルミニウムからなるセラミックス保護基板を前記電気絶縁性保護層に接するように接合させて、さらに、図4(A)のようなセラミックス支持基板側に円筒型支柱を設けた耐腐食性積層セラミックス部材、及び図3(A)のようなセラミックス保護基板側に円筒型支柱を設けた耐腐食性積層セラミックス部材を作製した。電極層に接続している給電部材の一端はその円筒型支柱にそれぞれ挿入するようにした。
外径300mm厚さ10mmの窒化アルミニウムのセラミックス支持基板に加熱ヒーター用電極層としてタングステンペーストをスクリーン印刷法にて塗布し、窒素雰囲気中、1700℃の高温下にてタングステン電極の焼付けを行い接合し、セラミックス支持基板に電極層を形成させ、該電極層に給電部材を接続した。そして、その電極層を覆うように塩化アルミニウムとアンモニアを1000℃にて反応させて窒化アルミニウムからなる電気絶縁性保護層を20μm形成させ、さらにその上に、窒化アルミニウムからなるセラミックス保護基板を接合させ、これらの接合端面外周全周に渡って厚さ0.01〜10mmの種々の厚さを有する酸化イットリウムを溶射法により堆積し、接合端面を被覆するように保護膜を形成した。さらに、図6(B)のようなセラミックス支持基板側に円筒型支柱を設けた耐腐食性積層セラミックス部材、及び図6(A)のようなセラミックス保護基板側に円筒型支柱を設けた耐腐食性積層セラミックス部材を作製した。ヒーター電極に接続している給電部材の一端はその円筒型支柱に挿入するようにした。
外径300mm厚さ10mmの窒化アルミニウムのセラミックス支持基板にヒーター用電極層としてタングステンペーストをスクリーン印刷法にて塗布し、窒素雰囲気中、1700℃の高温下にてタングステン電極の焼付けを行い接合し、セラミックス支持基板上に電極層を形成させ、該電極層に給電部材を接続した。そして、その電極層を覆うように塩化アルミニウムとアンモニアを1000℃にて反応させて窒化アルミニウムからなる電気絶縁性保護層を15μm形成させるだけでセラミックス保護基板を接合させずにセラミックス部材を作製した。
4…給電部材、 5…電気絶縁性保護層、 6、16…セラミックス保護基板、
7…被加熱体、 8…円筒型支柱、 9…保護膜。
Claims (10)
- 少なくとも、セラミックス支持基板と、該セラミックス支持基板上に形成された電極層と、該電極層に接続された給電部材と、前記電極層を覆うように前記セラミックス支持基板上に形成された電気絶縁性保護層とを備えたセラミックス部材であって、前記セラミックス支持基板の前記電極層が形成された側の面に、前記セラミックス支持基板上に形成された前記電気絶縁性保護層に接するようにセラミックス保護基板が接合されたものであることを特徴とする耐腐食性積層セラミックス部材。
- 前記セラミックス保護基板は、前記電気絶縁性保護層に接するとともに、前記セラミックス支持基板の側面を覆うように接合されたものであることを特徴とする請求項1に記載の耐腐食性積層セラミックス部材。
- 前記セラミックス保護基板側に円筒型支柱が設けられ、該円筒型支柱の内部に前記給電部材の一端が挿入されたものであることを特徴とする請求項1又は請求項2に記載の耐腐食性積層セラミックス部材。
- 前記セラミックス支持基板側に円筒型支柱が設けられ、該円筒型支柱の内部に前記給電部材の一端が挿入されたものであることを特徴とする請求項1又は請求項2に記載の耐腐食性積層セラミックス部材。
- 前記セラミックス支持基板の前記電極層が形成された側の反対の面上にさらにセラミックス保護基板を接合させ、該セラミックス保護基板にはさらに円筒型支柱が設けられ、該円筒型支柱の内部に前記給電部材の一端が挿入されたものであることを特徴とする請求項1又は請求項2に記載の耐腐食性積層セラミックス部材。
- 前記電極層及び前記電気絶縁保護層が形成された前記セラミックス支持基板と前記セラミックス保護基板とを接合した接合端面に、保護膜が0.01mm以上の厚さで被覆されたものであることを特徴とする請求項1から請求項5のいずれか一項に記載の耐腐食性積層セラミックス部材。
- 前記保護膜の材質が窒化アルミニウム、希土類酸化物、フッ化イットリウム、酸化アルミニウム、酸化珪素、ジルコニア、サイアロンのいずれかであることを特徴とする請求項6に記載の耐腐食性積層セラミックス部材。
- 前記セラミックス支持基板と前記セラミックス保護基板と前記電気絶縁性保護層の材質が窒化アルミニウム、希土類酸化物、酸化アルミニウム、酸化珪素、ジルコニア、サイアロンのいずれかを主成分とするものであることを特徴とする請求項1から請求項7のいずれか一項に記載の耐腐食性積層セラミックス部材。
- 前記電気絶縁性保護層がスクリーン印刷法、化学気相蒸着法、プラズマ溶射法のいずれかの手法で形成され、前記電極層がスクリーン印刷法、化学気相蒸着法、プラズマ溶射法のいずれかの手法で形成されたものであることを特徴とする請求項1から請求項8のいずれか一項に記載の耐腐食性積層セラミックス部材。
- 前記耐腐食性積層セラミックス部材が、加熱ヒーター、静電チャック及び静電チャック付加熱ヒーターのいずれかであることを特徴とする請求項1から請求項9のいずれか一項に記載の耐腐食性積層セラミックス部材。
Priority Applications (7)
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JP2007278774A JP5236927B2 (ja) | 2007-10-26 | 2007-10-26 | 耐腐食性積層セラミックス部材 |
KR1020080075514A KR101502925B1 (ko) | 2007-10-26 | 2008-08-01 | 내부식성 적층 세라믹스 부재 |
TW097137276A TW200937995A (en) | 2007-10-26 | 2008-09-26 | Corrosion-resistant laminated ceramic member |
US12/285,108 US8829397B2 (en) | 2007-10-26 | 2008-09-29 | Corrosion-resistant multilayer ceramic member |
DE602008003291T DE602008003291D1 (de) | 2007-10-26 | 2008-09-30 | Mehrschichtiges korrosionsresistentes Keramikelement |
EP08017214A EP2071610B1 (en) | 2007-10-26 | 2008-09-30 | Corrosion-resistant multilayer ceramic member |
KR20140188515A KR20150006405A (ko) | 2007-10-26 | 2014-12-24 | 내부식성 적층 세라믹스 부재 |
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US (1) | US8829397B2 (ja) |
EP (1) | EP2071610B1 (ja) |
JP (1) | JP5236927B2 (ja) |
KR (2) | KR101502925B1 (ja) |
DE (1) | DE602008003291D1 (ja) |
TW (1) | TW200937995A (ja) |
Cited By (6)
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KR20150013497A (ko) * | 2012-05-07 | 2015-02-05 | 도카로 가부시키가이샤 | 정전척 및 정전척의 제조 방법 |
KR101605704B1 (ko) * | 2015-06-05 | 2016-03-23 | (주)제니스월드 | 대면적 바이폴라 정전척의 제조방법 및 이에 의해 제조된 대면적 바이폴라 정전척 |
KR20170106659A (ko) * | 2012-12-11 | 2017-09-21 | 어플라이드 머티어리얼스, 인코포레이티드 | 금속 본딩된 보호 층을 갖는 기판 지지 조립체 |
US10403535B2 (en) | 2014-08-15 | 2019-09-03 | Applied Materials, Inc. | Method and apparatus of processing wafers with compressive or tensile stress at elevated temperatures in a plasma enhanced chemical vapor deposition system |
JP2019175995A (ja) * | 2018-03-28 | 2019-10-10 | 京セラ株式会社 | 試料保持具 |
JPWO2021010062A1 (ja) * | 2019-07-16 | 2021-01-21 |
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DE102012202370A1 (de) * | 2012-02-16 | 2013-08-22 | Webasto Ag | Verfahren zur Herstellung einer Fahrzeugheizung und Fahrzeugheizung |
US9916998B2 (en) | 2012-12-04 | 2018-03-13 | Applied Materials, Inc. | Substrate support assembly having a plasma resistant protective layer |
US10020218B2 (en) | 2015-11-17 | 2018-07-10 | Applied Materials, Inc. | Substrate support assembly with deposited surface features |
US10791761B2 (en) * | 2017-08-17 | 2020-10-06 | Rai Strategic Holdings, Inc. | Microtextured liquid transport element for aerosol delivery device |
CN109495994A (zh) * | 2018-12-28 | 2019-03-19 | 苏州甫电子科技有限公司 | 多层梁式结构的陶瓷微加热板及其制作方法 |
KR102655140B1 (ko) * | 2020-09-14 | 2024-04-05 | 엔지케이 인슐레이터 엘티디 | 복합 소결체, 반도체 제조 장치 부재 및 복합 소결체의 제조 방법 |
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Also Published As
Publication number | Publication date |
---|---|
DE602008003291D1 (de) | 2010-12-16 |
US8829397B2 (en) | 2014-09-09 |
TW200937995A (en) | 2009-09-01 |
KR101502925B1 (ko) | 2015-03-17 |
EP2071610A3 (en) | 2009-08-19 |
US20090107635A1 (en) | 2009-04-30 |
JP5236927B2 (ja) | 2013-07-17 |
KR20090042708A (ko) | 2009-04-30 |
EP2071610A2 (en) | 2009-06-17 |
KR20150006405A (ko) | 2015-01-16 |
EP2071610B1 (en) | 2010-11-03 |
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