CN1484855A - 陶瓷接合体 - Google Patents
陶瓷接合体 Download PDFInfo
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- CN1484855A CN1484855A CNA028035429A CN02803542A CN1484855A CN 1484855 A CN1484855 A CN 1484855A CN A028035429 A CNA028035429 A CN A028035429A CN 02803542 A CN02803542 A CN 02803542A CN 1484855 A CN1484855 A CN 1484855A
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- ceramic
- ceramic substrate
- cylindrical body
- conductor
- heating element
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
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Abstract
本发明的目的是提供一种陶瓷接合体，该陶瓷接合体包括：陶瓷基板和诸如筒状体那样的陶瓷体，该陶瓷基板和陶瓷体相互牢固接合，并且用于半导体产品制造/检查步骤的陶瓷基板的耐腐蚀性优良。根据本发明的陶瓷接合体包括：陶瓷基板，其内部设有导电体；以及陶瓷体，其与陶瓷基板的底面接合。该陶瓷接合体具有在陶瓷基板和陶瓷体的接合界面的上方区域的至少一部分中不形成导电体的区域。
Description
技术领域
本发明涉及一种陶瓷接合体，该陶瓷接合体用于热板(陶瓷加热器)、静电吸盘、感受器等，并包括：陶瓷基板，其内部埋设导电体；以及陶瓷体，例如陶瓷筒状体，其与基板的底面接合。
背景技术
常规上，使用由诸如不锈钢和铝合金那样的金属制成的基板的静电吸盘等一直用作半导体制造/检查装置，包括蚀刻设备、化学气相淀积设备等。
然而，这种金属制加热器存在以下问题。
首先，由于它由金属制成，因而加热器板的厚度必须约为15mm厚。这是因为，对于薄金属板，由于加热引起热膨胀而产生翘曲和应变，从而会使放置在金属板上的硅晶片破损或倾斜。然而，对于把加热器板做得较厚的情况，存在加热器重量重、体积大的问题。
并且，通过改变施加给电阻加热元件的电压和电流来改变用于对诸如硅晶片等的被加热物进行加热的面(以下称为加热面)的温度，因而也存在一个问题是，加热板的温度不会快速跟随电压和电流的变化，因而温度控制有困难。
因此，日本特开平4-324276号公报提出了一种陶瓷加热器，该陶瓷加热器使用氮化铝(一种热传导率高、强度大的非氧化陶瓷)作为基板，并且是通过形成电阻加热元件和由钨制成的填充了导电体的贯通孔，并把作为外部端子的微线与其焊接而获得的。
由于这种陶瓷加热器采用在高温时机械强度高的陶瓷基板，因而可使陶瓷基板的厚度变薄，从而减小热容量，结果，可使陶瓷基板的温度快速跟随电压和电流的变化。
并且，对于这种陶瓷加热器，正如在日本特开2000-114355号公报和日本专利第2783980号公报所揭示的那样，使圆筒状陶瓷和圆板状陶瓷通过陶瓷接合层接合，以保护外部端子等的配线，免受用于半导体制造步骤的反应性气体和卤素气体的影响。
发明内容
然而，对于这种陶瓷加热器，为了使圆筒状陶瓷和圆板状陶瓷相互牢固接合，必不可少的是需要使其通过陶瓷接合层接合，或者把含有烧结助剂的涂敷溶液施加给其相互接合的面。
并且，对于采用该方法制造接合体的情况，接合部分的强度不充分，并且接合部分的耐腐蚀性也不充分，因此，如果长时间暴露于反应性气体和卤素气体，则上述圆板状陶瓷会发生腐蚀并不能使用，同时，陶瓷自由粒子从其上脱落并附着到硅晶片上，从而产生自由粒子污染。
本发明是为解决上述问题而作出的，并且本发明的目的是实现一种陶瓷接合体，该陶瓷接合体包括：陶瓷基板；以及筒状体等的陶瓷体，其与基板牢固接合，并且上述陶瓷基板的耐腐蚀性高。
根据本发明的陶瓷接合体包括：陶瓷基板，其设有导电体；以及陶瓷体，其与陶瓷基板的底面接合，其中，上述陶瓷接合体具有在上述陶瓷基板和上述陶瓷体的接合界面的上方区域的至少一部分中不形成导电体的区域。
在陶瓷基板内包含的诸如Y2O3等那样的烧结助剂在烧结处理中朝表面扩散，因此，对于在陶瓷基板内部形成电极和电阻加热元件的情况，烧结助剂朝表面的扩散受到电极和电阻加热元件的阻碍，并且在电极或电阻加热元件的下方区域附近的烧结助剂浓度大幅下降。另一方面，在不形成电阻加热元件的区域的下方区域，烧结助剂浓度较高。
在本发明的陶瓷接合体中，在接合界面中的烧结助剂浓度较高，这是因为该陶瓷接合体具有在上述陶瓷基板和上述陶瓷体的接合界面的上方区域的至少一部分中不形成电极和电阻加热元件的区域。
因此，对于陶瓷基板内部的烧结助剂浓度较高的情况，可通过加热使陶瓷基板和陶瓷体接合，同时可使其保持相互直接接触，并且对于在把烧结助剂插入陶瓷基板和陶瓷体的界面的同时进行加热的情况，可增加两者之间的接合强度。通过在这种条件下进行接合，可在界面中进行烧结，并可使陶瓷粒子相互接合并生长，以便跨越界面，因此可使陶瓷基板和陶瓷体牢固接合。
结果，能对在上述陶瓷体内收容的外部端子、导电线等的电极部件进行可靠保护，免受腐蚀性气体的影响。
对于本发明的陶瓷加热器，与上述电阻加热元件的下方区域中的诸如Y2O3那样的烧结助剂的浓度相比，期望的是，上述陶瓷基板的接合界面的上方区域中的诸如Y2O3那样的烧结助剂的浓度较高。
这是因为，如果烧结助剂浓度较高，则在陶瓷基板和陶瓷体的界面中生长的陶瓷粒子会使陶瓷基板和陶瓷体牢固接合，从而使两者之间的粘接强度较高。
并且，陶瓷接合体优选地包括静电电极，并用作设有加热装置的静电吸盘。这是因为，静电吸盘经常在腐蚀性气氛中使用，并且如上所述，使上述陶瓷基板与诸如筒状体那样的上述陶瓷体接合的结构是最佳的。
并且，对于把本发明的陶瓷接合体应用于半导体制造/检查装置的情况，优选的是：把内部埋设导电体的陶瓷基板固定在设有底板的支撑壳体的上部；以及与上述陶瓷基板的底面接合的陶瓷体(筒状体)收容来自上述导电体的配线。这是为了防止上述配线由于暴露于腐蚀性气体等而发生腐蚀。另外，陶瓷体不必是筒状，并且陶瓷体可以整体是陶瓷制成的并在内部埋设配线。而且，筒状体可以是除筒状体以外的中空角柱。
在上述陶瓷基板的接合界面的上方区域，不形成导电体的区域面积优选地等于或大于上述接合界面面积的5％。这是因为，如果它小于5％，则烧结助剂不会充分扩散，因而不能获得充分的接合强度。
并且，在上述陶瓷基板的接合界面的上方区域，不形成导电体的区域面积(不形成导电体的面积)更优选地等于或大于上述接合界面面积的50％。这是因为，如果不形成导电体的面积等于或大于50％，则会促进烧结助剂的扩散，从而可获得较高的接合强度。
附图说明
图1是示意性示出本发明的陶瓷接合体一例的陶瓷加热器的底面图。
图2是图1所示的陶瓷加热器的断面图。
图3是示意性示出构成图1所示的陶瓷加热器的陶瓷基板的局部放大断面图。
图4是示意性示出构成本发明的陶瓷接合体一例的静电吸盘的陶瓷基板的垂直断面图。
图5是示意性示出构成图4所示的静电吸盘的陶瓷基板的局部放大断面图。
图6是示意性示出埋设在陶瓷基板内的静电电极一例的水平断面图。
图7是示意性示出埋设在陶瓷基板内的静电电极另一例的水平断面图。
图8是示意性示出埋设在陶瓷基板内的静电电极又一例的水平断面图。
图9(a)～9(d)是示意性示出本发明的陶瓷接合体一例的陶瓷加热器制造方法一例的断面图。
图10是示意性示出根据实例的构成陶瓷加热器的陶瓷基板的局部放大断面图。
图11是示出弯曲强度试验中的不形成导电体的面积的比率与破坏强度之间的关系的图。
符号说明
10 陶瓷加热器
11 陶瓷基板
11a 加热面
11b 底面
12 电阻加热元件
12a 电阻加热元件端部
13，13’ 填充导电体的贯通孔
14 有底孔
15 贯通孔
16 凹部
17 筒状体
18 导体电路
19 盲孔
130 通路孔
180 测温元件
具体实施方式
以下将参照实施例，对本发明进行说明。然而，本发明不限于下述
实施例的范围。
对于构成本发明的陶瓷接合体的陶瓷基板的内部中形成的导电体是电阻加热元件和导体电路的情况，上述陶瓷接合体用作陶瓷加热器。
图1是示意性示出作为构成本发明的陶瓷接合体的陶瓷加热器一部分的陶瓷基板的平面图；图2是其断面图；以及图3是图2所示的陶瓷制筒状体的周边部分的局部放大断面图。
如图2所示，在陶瓷加热器10中，筒状体17与圆板状陶瓷基板11的底面11b的中心附近接合。而且，由于筒状体17形成为与一个支撑壳体的底板(未示出)紧密连接，因而筒状体17的内侧和外侧相互完全隔离。
由于陶瓷基板11的底面11b和筒状体17通过极薄接合层相互接合或者无任何中间层而直接接合，因而接合牢固，当施加大的应力时，不会在接合部分发生气体渗透，或者不会发生筒状体17的分离。
在陶瓷基板11的内部，如图1所示，形成由同心圆形电路构成的电阻加热元件12，这些电阻加热元件12连接成使相互邻近的最近圆形电路耦合以形成各单线。
然而，如图1和图2所示，在陶瓷基板11和筒状体17之间的接合界面的上方区域，存在不形成电阻加热元件12的区域A。因此，包含在陶瓷基板内的烧结助剂可到达与筒状体的接合界面，而不会在向基板表面的扩散过程中受到电阻加热元件的阻碍，从而可使陶瓷基板和陶瓷制筒状体牢固接合。
并且，如图2所示，在电阻加热元件12和底面11b之间，形成朝陶瓷基板11的中心延伸的导体电路18，并且电阻加热元件端部12a和导体电路18通过通路孔130连接。
形成导体电路18是为了使电阻加热元件端部12a延伸到中心部分。在陶瓷基板11的内部，在延伸到筒状体17的内侧附近的导体电路18的其他端的正下面形成填充导电体的贯通孔13’和用于使填充导电体的贯通孔13’露出的盲孔19，并且填充导电体的贯通孔13’通过钎焊层(未示出)，与具有T形尖端部的外部端子23连接。
另外，导体电路18使电阻加热元件端部12a和填充导电体的贯通孔通过区域A连接，与电阻加热元件不同，导体电路18仅存在于区域A的一部分内而不是整个区域A内，这样它们不会影响陶瓷基板表面内的Y2O3的浓度分布，因此不会与本发明相矛盾。
对于电阻加热元件端部12a存在于筒状体17的内侧的情况，由于无需通路孔和导体电路，因而填充导电体的贯通孔13直接形成在电阻加热元件端部，并通过钎焊层与外部端子23连接。
然后，把具有导电线230的插座25安装到各自外部端子23上，并且把导电线230通过在底板(未示出)内形成的贯通孔引出到外部并与电源等(未示出)连接。
另一方面，把具有引线290的诸如热电偶等那样的测温元件180插入在陶瓷基板11的底面11b内形成的有底孔14内，并使用耐热树脂、陶瓷(硅胶等)等密封。引线290贯穿绝缘子(未示出)的内部，并通过在支撑壳体的底板内形成的贯通孔(未示出)引出到外部，绝缘子的内部也与外部隔离。
并且，在陶瓷基板11的中心附近形成贯通孔15，以使提升销(未示出)通过。
上述提升销形成为在把诸如硅晶片等那样的被处理物放置在其上时能够上下移动，因此，这些提升销能够把硅晶片传送到未示出的输送设备，或者从输送设备接收硅晶片，同时，能够在把硅晶片放置到陶瓷基板11的加热面11a时加热硅晶片，或者在加热面11a的上方距加热面11a有50～2,000μm的距离支撑硅晶片时加热硅晶片。
并且，在陶瓷基板11内形成贯通孔和凹部，然后，使支撑销在略微从陶瓷基板11突出时固定，并在上述支撑销上支撑硅晶片，这样可以在距加热面有50～2,000μm的距离来加热硅晶片。
另外，可以在支撑壳体的底板内铺设冷却剂导入管等。在这种情况，把冷却剂通过一导管导入冷却剂导入管，可对陶瓷基板11的温度和冷却速度进行控制。
如上所述，对于陶瓷加热器10，由于筒状体17与陶瓷基板11的底面11b接合，并且筒状体17设有未示出的支撑壳体的底板(容器壁)，因而筒状体17的内侧和外侧相互完全隔离。
因此，通过使用管状部件来对从底板内的贯通孔引出的导电线230加以保护，即使在陶瓷加热器10周围的环境气氛含有反应性气体、卤素气体等，并且担心这些气体等容易渗入支撑壳体的内部，也可防止筒状体17内部的配线发生腐蚀。另外，由于受绝缘子等保护，也可防止来自测温元件180的配线290发生腐蚀。
并且，通过把惰性气体等缓慢导入筒状体17的内侧以防止反应性气体和卤素气体流入筒状体17的内侧，可进一步可靠地防止导电线230发生腐蚀。
陶瓷基板11优选地在内部包含按重量计为1～10％的Y2O3作为烧结助剂。这是因为，如果上述Y2O3的含量按重量计为小于1％，则陶瓷基板11的耐腐蚀性降低，并且与筒状体17的接合强度不充分，而如果该含量按重量计为超过10％，则会导致制造成本的增加，因此不实用。该含量还优选地按重量计为2～6％。
对于使用氮化物陶瓷(氮化铝)作为基板的情况，除了Y2O3以外，还可使用Al2O3、CaO、Na2O、Li2O、Rb2O等作为烧结助剂。对于使用SiC作为基板的情况，可使用C、B4C等作为烧结助剂。对于使用Al2O3作为基板的情况，可使用CaO和MgO作为烧结助剂。
根据由JIS Z 8721规定的标准，陶瓷基板11的亮度优选的是等于或小于N6，这是因为，具有这种亮度的陶瓷基板在辐射热量和隐蔽性方面是优良的。并且，使用热象图仪(thermoviewer)，可对由这种陶瓷基板构成的陶瓷加热器的表面温度进行准确测量。
另外，亮度值N被定义如下：理想黑色亮度被定义为0，理想白色亮度被定义为10，并通过在黑色亮度和白色亮度之间，按相等的可感觉亮度差把各色划分为10级，用N0～N10来表示各色的亮度值。
通过把颜色与对应于N0～N10的色卡进行比较，可进行实际测量。在此情况下，第一小数位数字是0或5。
通过在基板中添加100～5,000ppm的碳，可获得具有这种特性的陶瓷基板11。作为碳，有非晶质碳和结晶质碳，由于非晶质碳可对高温时基板的体积电阻率的下降进行抑制，并且结晶质碳可对高温时基板的热传导率的下降进行抑制，因而可以根据要制造的基板的用途来正确选择碳的种类。
例如，通过在空气中对仅由C、H和O组成的烃，优选的是，糖类进行燃烧，可获得非晶质碳，并可使用石墨粉末等作为结晶质碳。
并且，通过在惰性气体气氛中对丙烯酸树脂进行热分解，然后对所生成的丙烯酸树脂进行加热加压，可获得碳，并且通过改变丙烯酸树脂的酸值，可对结晶性(非晶性)的程度进行调整。
陶瓷基板11的形状优选地具有如图所示的圆板形状，并且直径优选的是等于或大于200mm，最佳为等于或大于250mm。
这是因为，圆板状陶瓷基板11需要进行均匀加热，并且具有较大直径的基板往往会加热不均匀。
陶瓷基板11的厚度优选的是等于或小于50mm，更优选的是等于或小于20mm。最佳为1～5mm。
这是因为，如果厚度太薄，则在高温加热时容易发生翘曲，而如果厚度太厚，则热容量太高，因此，温升温降特性恶化。
并且，陶瓷基板11的孔隙率优选的是0或者等于或小于5％。上述孔隙率采用阿基米德法来测量。
这是因为，可对高温时的热传导率的下降和翘曲的发生进行抑制。
筒状体17具有牢固支撑陶瓷基板11的功能，并且即使在对陶瓷基板11加热到高温时，也能防止由自重引起的翘曲，因此能防止诸如硅晶片等那样的被处理物的破损，并能对该被处理物进行均匀加热。
作为构成筒状体17的陶瓷，可使用与上述陶瓷基板类似的陶瓷。
筒状体17优选地在内部包含按重量计为0～5％的Y2O3作为烧结助剂。这是因为，如果上述Y2O3的含量按重量计为超过5％，则会导致制造成本的高涨，因此不实用。
本发明的陶瓷接合体中的筒状体的形状优选的是圆筒体，并且内径优选的是等于或大于10mm。
这是因为，如果内径小于10mm，则难以牢固支撑陶瓷基板，并且在对陶瓷基板进行高温加热时，陶瓷基板会由于自重而产生翘曲。
并且，上述筒状体的厚度优选的是3～20mm。这是因为：如果厚度小于3mm，则筒状体的厚度太薄，机械强度太低，并且由于反复出现温升和温降，导致上述筒状体的破损概率较高；如果厚度超过20mm，则筒状体的厚度太厚，热容量太高，因而担心温升速度下降。
作为电阻加热元件12的图形，除了图1所示的同心圆形状以外，还可举例如下：螺旋形状，偏心圆形状，同心圆形状和缠绕线的组合等。电阻加热元件12的厚度优选的是1～50μm，并且其宽度优选的是5～20μm。
这是因为，通过改变电阻加热元件12的厚度和宽度，可改变其电阻值，如果它们在这些范围内，则是最实用的。电阻加热元件12的电阻值随着其厚度变薄和其宽度变窄而变高。
电阻加热元件12可以具有诸如方形、椭圆形、纺锤形或半圆形那样的任何断面形状，然而优选地具有扁平形状。这是因为，如果它们是扁平形状，则朝向加热面11a的热辐射容易增加要传送到加热面11a的热量，并且几乎不会产生加热面11a的不均匀温度分布。此外，电阻加热元件12可以具有螺旋形状。
对于陶瓷加热器10，不特别限制由电阻加热元件12组成的电路数是等于还是大于一个，然而为了对加热面11a进行均匀加热，优选的是形成多个电路。
对于在陶瓷基板11的内部形成电阻加热元件12的情况，其形成位置不受特定限制，然而至少一层优选地形成在距离陶瓷基板11的底面11b的厚度在60％以内的位置。这是因为，热量在传送到加热面11a时发生扩散，因此，加热面11a的温度往往会变得均匀。
对于在陶瓷基板11的内部形成电阻加热元件12的情况，优选地使用由金属和导电性陶瓷构成的导体浆料。
也就是说，对于在陶瓷基板11的内部形成电阻加热元件12的情况，当在生胚薄片上形成导体浆料层之后，使生胚薄片层叠并进行烧制，以便在内部形成电阻加热元件12。
上述导体浆料不受特定限制，然而优选的是除含有金属粒子或导电性陶瓷以外，还含有树脂、溶剂、增稠剂等，以确保导电性。
作为上述金属粒子，例如，贵金属(金，银，白金，钯)、铅、钨、钼、镍等是优选的。它们可以单独使用，也可以两种以上并用。这是因为，这些金属较难氧化，并具有充分高的电阻值来发热。
作为上述导电性陶瓷，例如，可列举出钨的碳化物、钼的碳化物等。它们可以单独使用，也可以两种以上并用。
这些金属粒子或导电性陶瓷粒子的粒径优选的是0.1～100μm。如果粒径小于0.1μm，则它们容易氧化，而如果粒径超过100μm，则难以进行烧结，并且电阻值增加。
上述金属粒子的形状可以是球状或鳞状。对于使用这些金属粒子的情况，可以使用上述球状粒子和上述鳞状粒子的混合物。
如果上述金属粒子是鳞状粒子或者采用球状粒子和鳞状粒子混合物的形式，则在金属粒子间易于保持金属氧化物，从而可确保电阻加热元件12和陶瓷基板11之间的粘着性，并可提高电阻值，因此这是有利的。
作为用于导体浆料的树脂，例如，可列举出环氧树脂、酚醛树脂等。并且，作为溶剂，例如，可列举出异丙醇等。作为增稠剂，可列举出纤维素等。
并且，对于在基板内部形成导体电路18的情况，除了用于形成上述电阻加热元件12的由金属或导电性陶瓷构成的导体浆料以外，还可使用通常用于形成电极等的导体浆料。
导体电路18的尺寸不受特定限制，其宽度和厚度优选地分别为0.1～50mm和0.1～500μm，并且可以根据从电阻加热元件12的端部到与陶瓷基板11的中心附近接合的筒状体17的内侧的距离来正确调整导体电路的长度。
根据本发明的陶瓷加热器10优选地在等于或大于100℃时使用，更优选地在等于或大于200℃时使用。
在本发明中，通过插座25与外部端子23连接的导电线230优选地被涂敷耐热绝缘元件，以防止与另一导电线230的短路。
作为这种绝缘部件，可列举出与筒状体17类似的氮化铝，除此以外，还可列举出诸如氧化铝、二氧化硅、富铝红柱石、堇青石等那样的氧化物陶瓷、氮化硅、碳化硅等。
对于图1、图2和图3所示的陶瓷加热器10，通常，陶瓷基板11装配在支撑壳体(未示出)的上部，然而在另一实施例中，基板可以设置在其上端具有基板接收部的支撑壳体的上面，并可以用诸如螺栓等那样的固定部件来固定。
在本发明中，如图2所示，热电偶可用作测温元件180。这是因为，电阻加热元件12的温度由热电偶来测量，并且通过根据所获得的数据来改变电压和电流，可进行温度控制。
上述热电偶的引线的接合部分的尺寸等于或大于各引线的元件线的直径，并且优选的是等于或小于0.5mm。采用这种构成，接合部分的热容量下降，并且温度可精确快速地变换为电流值。因此，可提高温度可控性，并可缩小硅晶片的加热面11a的温度分布。
作为上述热电偶，例如，正如在JIS-C-1602(1980)中列举的那样，可包括K型、R型、B型、E型、J型和T型热电偶。
除了上述热电偶以外，作为根据本发明的陶瓷加热器10的测温装置，例如，可列举出诸如基于白金的测温电阻器、热敏电阻器等那样的测温元件，还可列举出诸如热象图仪等那样的使用光学装置的测温元件。
对于使用上述热象图仪的情况，可对陶瓷基板11的加热面11a的温度进行测量，此外，还可直接对诸如硅晶片那样的被加热物表面的温度进行测量，从而可提高被测量物的温度控制精度。
构成本发明的陶瓷接合体的陶瓷基板将用于制造半导体和检查半导体。其实际例子包括静电吸盘、感受器、热板(陶瓷加热器)等的例子。
上述陶瓷加热器是由内部仅埋设电阻加热元件的陶瓷基板构成的设备，因此，可把诸如硅晶片等那样的被处理物保持在陶瓷基板的表面上，或者当与表面分离时，可把硅晶片加热到规定温度或者可洗净该硅晶片。
对于在构成本发明的陶瓷接合体的陶瓷基板的内部埋设的导电体是静电电极或导体电路的情况，上述陶瓷接合体用作静电吸盘。
图4是示意性示出这种静电吸盘的垂直断面图，图5是静电吸盘的局部放大断面图，图6是示意性示出在构成静电吸盘的基板内形成的静电电极的周边部分的水平断面图。
在构成静电吸盘30的陶瓷基板31的内部，半圆形吸盘正负静电层32a、32b对置配设，并且在这些静电电极上形成陶瓷介质膜34。并且，在陶瓷基板31的内部形成电阻加热元件320，以便对诸如硅晶片等那样的被加热物进行加热。另外，根据需要，可以把RF电极埋设在陶瓷基板31内。
上述静电电极优选地采用诸如贵金属(金，银，白金，钯)、铅、钨、钼、镍等那样的金属或者诸如钨和钼的碳化物那样的导电性陶瓷制成。它们可以单独使用，也可以两种以上并用。
如图4和图5所示，静电吸盘30的构成与上述陶瓷加热器10类似，只不过在陶瓷基板31内形成静电电极32a、32b，而且在静电电极32a、32b的端部的正下方形成填充导电体的贯通孔33，并在静电电极32上形成陶瓷介质膜34。
也就是说，筒状体37与陶瓷基板31的底面的中心附近接合，填充导电体的贯通孔33、330形成在筒状体37内侧的上方并与静电电极32a、32b、电阻加热元件320连接，而且与插入盲孔390内的外部端子360连接，并且外部端子360的一端与具有导电线331的插座350连接。导电线331被引出到贯通孔(未示出)的外部。
并且，对于在筒状体37的外部具有端部的电阻加热元件320的情况，与图1至图3所示的陶瓷加热器10的情况类似，形成通路孔39、导体电路380以及填充导电体的贯通孔330’，从而使电阻加热元件320的端部延伸到筒状体37的内侧(参见图5)。因此，通过把外部端子360插入用于使填充导电体的贯通孔330’露出的盲孔390并使它们连接，可把外部端子360收容在筒状体37的内侧。
对于操作静电吸盘30的情况，分别向电阻加热元件320和静电电极32施加电压。因此，可把设置在静电吸盘30上的硅晶片加热到规定温度并静电吸附到陶瓷基板31上。此外，静电吸盘不必设有电阻加热元件320。
图7是示意性示出形成在另一静电吸盘的基板上的静电电极的水平断面图。由半圆弧状部72a和梳齿状部72b组成的吸盘正电极静电层72以及由半圆弧状部73a和梳齿状部73b组成的类似的吸盘负电极静电层73被对向配置成使一个梳齿状部72b的齿与另一梳齿状部73b的齿交错延伸。
并且，图8是示意性示出形成在另一静电吸盘的基板上的静电电极的水平断面图。在静电吸盘中，在基板81的内部形成具有把圆一分为四而形成的形状的吸盘正电极静电层82a、82b和吸盘负电极静电层83a、83b。这两个吸盘正电极静电层82a、82b和这两个吸盘负电极静电层83a、83b形成为相互交叉。
此外，对于形成具有通过分割圆而形成的形状的电极的情况，被分割部分的数量不受特定限制，可以形成5分割以上的部分，而且形状不限于扇形。
以下，作为本发明的陶瓷接合体的制造方法的一例，将参照图9对陶瓷加热器的制造方法进行说明。
图9(a)～9(d)是示意性示出在由氮化铝构成的基板的内部具有电阻加热元件的陶瓷加热器的制造方法的一部分的断面图。
(1)生胚薄片的制造步骤
首先，把氮化铝等的陶瓷粉末与粘合剂、溶剂等进行混合以制备浆料。这用于形成生胚薄片。
在此情况下，把作为烧结助剂的Y2O3添加给上述生胚薄片。
而且，作为粘合剂，从丙烯酸粘合剂、乙基纤维素、丁基溶纤剂和聚乙烯醇中选择的至少一种粘合剂是优选的。
并且，作为溶剂，从α-萜品醇和乙二醇中选择的至少一种溶剂是优选的。
采用刮刀法把通过混合所获得的浆料形成为板状形状，以获得生胚薄片50。
生胚薄片50的厚度优选的是0.1～5mm。
接着，制造：具有作为用于使电阻加热元件的端部和导体电路连接的通路孔的部分630的生胚薄片；以及具有作为用于使导体电路和外部端子连接的填充导电体的贯通孔的部分的生胚薄片。
并且，根据需要，形成：作为用于使用于传送硅晶片的提升销通过的贯通孔的部分；作为用于插入用于支撑硅晶片的支撑销的贯通孔的部分；以及作为用于埋设诸如热电偶那样的测温元件的有底孔的部分。另外，在形成生胚薄片层叠体之后，或者在形成和烧制该层叠体之后，可以进行填充导电体的贯通孔的有底孔的形成处理。
此外，作为通路孔630的部分和作为填充导电体的贯通孔的部分63、63’可以被填充通过向上述浆料添加碳而获得的浆料。这是因为生胚薄片中的碳与在填充导电体的贯通孔中填充的钨或钼进行反应，并且形成其碳化物。
(2)把导体浆料印刷在生胚薄片上的步骤
在具有作为通路孔的部分630的生胚薄片上，印刷金属浆料或者含有导电性陶瓷的导体浆料，以形成导体浆料层62。
此时，在与要接合的筒状体17的上部对应的区域不印刷导体浆料。这样，通过在与筒状体的接合界面的上方区域以外的区域形成电阻加热元件，在陶瓷基板11内包含的烧结助剂可到达筒状体接合部分，而不会在向表面的扩散过程中受到电阻加热元件12的阻碍，从而可使陶瓷基板11和陶瓷制筒状体17相互牢固接合。
另外，在这些导体浆料中，使金属粒子或导电性陶瓷粒子混合。
作为上述金属粒子的钨粒子或钼粒子的平均粒径优选的是0.1～5μm。这是因为，如果平均粒径小于0.1μm或大于5μm，则印刷导体浆料变得困难。
这种导体浆料的例子包括一种组成物(浆料)，该组成物含有：金属粒子或导电性陶瓷粒子，按重量计为85～87份；从丙烯酸树脂粘合剂、乙基纤维素、丁基溶纤剂和聚乙烯醇中选择的至少一种粘合剂，按重量计为1.5～10份；以及从α-萜品醇和乙二醇中选择的至少一种溶剂，按重量计为1.5～10份。
并且，通过把在形成静电电极等时通常使用的导体浆料印刷在具有作为填充导电体的贯通孔的部分63、63’的生胚薄片上，形成导体浆料层68。
(3)生胚薄片的层叠步骤
在印刷导体浆料62的生胚薄片上，使不印刷导体浆料的多个生胚薄片50层叠，并使具有导体层68的生胚薄片层叠在所生成的层叠生胚薄片的下面。并且，在该生胚薄片的下面，使不印刷导体浆料的多个生胚薄片50层叠(图9(a))。
在此情况下，把要在印刷导体浆料62的生胚薄片的上侧层叠的生胚薄片50的数量调整成大于要在生胚薄片的下侧层叠的生胚薄片50的数量，从而使形成电阻加热元件的位置偏向底面。实际上，在上侧层叠的生胚薄片50的数量优选的是20～50，并且在下侧层叠的生胚薄片50的数量优选的是5～20。
(4)生胚薄片层叠体的烧制步骤
对所获得的生胚薄片层叠体进行加热加压，以便烧结生胚薄片50内部的导体浆料层62、68，从而制造陶瓷基板11、电阻加热元件12、导体电路18等(参见图9(b))。
加热温度优选的是1000～2000℃，并且加压压力优选的是10～20MPa。在惰性气体气氛中进行加热。惰性气体的例子包括氩、氮等。
接着，在陶瓷基板11的底面11b形成用于插入测温元件的有底孔(未示出)。上述有底孔可通过钻孔或者诸如喷砂那样的喷射处理形成。另外，上述有底孔和一凹部可以在下述的陶瓷基板11和筒状体17相互接合之后形成，也可以通过预先在生胚薄片50内形成作为有底孔的部分并同时对生胚薄片50层叠和烧制来形成。
并且，形成盲孔19是为了露出用于形成与内部的电阻加热元件12连接的填充导电体的贯通孔13、13’。盲孔19也可以在陶瓷基板11和筒状体17相互接合之后形成。
(5)筒状体的制造
把氮化铝粉末放入筒状成型模内进行成型，并且必要时，进行切割处理。在1000～2000℃的加热温度时以常压对所获得的本体进行烧结，以制造陶瓷制筒状体17。上述烧结在惰性气体气氛中进行。作为惰性气体，例如，可使用氩、氮等。
在此情况下，作为烧结助剂，把Y2O3添加给上述氮化铝粉末。这是因为，陶瓷基板和筒状体可直接相互良好接合。
对筒状体17的尺寸进行调整是为了使在陶瓷基板的内部形成的填充导电体的贯通孔13、13’位于筒状体的内侧。
另外，通过进一步增加在上述筒状体内所含的Y2O3量，可使陶瓷基板和筒状体直接相互接合，与陶瓷基板的接合界面中的烧结助剂浓度无关，然而，如果采用这种方式来制造陶瓷接合体，则所需程序比较麻烦，并会使制造成本增高，因此不实用。
接着，对筒状体17的端面进行研磨和找平。
(6)陶瓷基板和筒状体的接合
对于在陶瓷基板11的接合部分和筒状体17的接合部分中的烧结助剂浓度较高的情况，通过对陶瓷基板11和筒状体17进行加热，同时使陶瓷基板11的底面11b的中心附近与筒状体17的端面相互接触，可使陶瓷基板11和筒状体17相互接合。
对于在陶瓷基板11的接合部分和筒状体17的接合部分中的烧结助剂浓度不太高的情况，在把包含烧结助剂的溶液施加给陶瓷基板11的底面11b的接合部分和筒状体17的端面之后，对陶瓷基板11和筒状体17进行加热，从而可使它们相互接合。此时，使筒状体17与陶瓷基板的底面11b接合，以使在陶瓷基板的内部形成的填充导电体的贯通孔13、13’位于筒状体17的内径的内部(图9(c))。
把陶瓷基板11和筒状体17优选地加热到1500～2000℃。这是因为，陶瓷基板11中的Y2O3可在筒状体17内扩散，并且氮化铝粒子可在陶瓷基板11和筒状体17之间的界面中良好生长，从而可使陶瓷基板11和筒状体17相互牢固接合。
(7)端子等的安装
通过钎焊或铜焊材料把外部端子23插入在筒状体17的内径的内部形成的盲孔19内并进行加热，以便进行钎焊或铜焊材料的回流，从而使外部端子23与填充导电体的贯通孔13、13’连接(图9(d))。
加热温度在软处理时优选的是90～450℃，在铜焊材料时优选的是900～1100℃。
接着，使通过插座与电源连接的导电线230与外部端子23连接(参见图2)。
并且，把作为测温元件的热电偶等插入所形成的有底孔内，并使用耐热树脂进行密封，以便制造在底面具有陶瓷制筒状体、并在陶瓷基板和筒状体的接合界面的上方区域不形成电阻加热元件的陶瓷加热器。
在陶瓷加热器中，在把诸如硅晶片那样的半导体晶片置于其上，或者使用提升销或支撑销来保持硅晶片等之后，通过对硅晶片等进行加热和冷却，可将该硅晶片等洗净。
在制造上述陶瓷加热器时，通过在陶瓷基板内部形成静电电极，可制造静电吸盘。另外，在此情况下，需要形成用于使静电电极与外部端子连接的填充导电体的贯通孔，然而无需形成用于插入支撑销的贯通孔。
对于在陶瓷基板内部形成电极的情况，与形成电阻加热元件的情况类似，可以在生胚薄片表面形成作为静电电极的导体浆料层。
以下将对本发明作进一步详细说明。
本发明最佳实施方式
(实例1)静电吸盘的制造(参见图4～6)
(1)通过形成一种组成物并采用刮刀法来获得厚度为0.47mm的生胚薄片，该组成物是通过将以下各项进行混合而获得的，即：氮化铝粉末(Tokuyama公司制造，平均粒径为1.1μm)，按重量计为100份；Y2O3(平均粒径为0.4μm)，按重量计为4份；基于丙烯酸树脂的粘合剂，按重量计为12份；分散剂，按重量计为0.5份；以及由1-丁醇和乙醇组成的醇，按重量计为53份。
(2)接着，在使生胚薄片在80℃时干燥5小时之后，形成以下生胚薄片：未经过处理的生胚薄片；设有用于通过穿孔使电阻加热元件与导体电路连接的通路孔用贯通孔的生胚薄片；设有用于使导体电路与外部端子连接的通路孔用贯通孔的生胚薄片；以及设有用于使静电电极与外部端子连接的通路孔用贯通孔的生胚薄片。
(3)通过将以下各项进行混合来制成导体浆料A，即：平均粒径为1μm的碳化钨粒子，按重量计为100份；丙烯酸粘合剂，按重量计为3.0份；α-萜品醇溶剂，按重量计为3.5份；以及分散剂，按重量计为0.3份。
而且，通过将以下各项进行混合来制成导体浆料B，即：平均粒径为3μm的钨粒子，按重量计为100份；丙烯酸粘合剂，按重量计为1.9份；α-萜品醇溶剂，按重量计为3.7份；以及分散剂，按重量计为0.2份。
(4)并且，采用丝网印刷法把上述导体浆料A印刷在设有用于使导体电路与外部端子连接的通路孔用贯通孔的生胚薄片的表面上，以形成作为电阻加热元件的导体浆料层。另外，在上述步骤中，在筒状体接合部分的上方区域不印刷导体浆料A。并且，在未进行任何处理的生胚薄片内形成具有图6所示形状的采用静电电极图形的形式的导体浆料层。
并且，把导体浆料B填充到用于使电阻加热元件与导体电路连接的通路孔用贯通孔内以及用于与外部端子连接的填充导电体的贯通孔用贯通孔内。
使分别进行了上述处理的各生胚薄片层叠。
首先，在印刷作为电阻加热元件的导体浆料层的生胚薄片的上侧(加热面侧)，使设有具有填充导电体的贯通孔33的部分的34张生胚薄片层叠，并且在下侧(底面侧)，使设有作为导体电路的导体浆料层的一张生胚薄片层叠，并在更下侧，使设有作为填充导电体的贯通孔33、330、330’的部分的12张生胚薄片层叠。
在采用该方式层叠的生胚薄片的最上部，还层叠有采用静电电极图形形式的导体浆料层的生胚薄片，并且使未进行处理的2张生胚薄片层叠其上，并使生成的生胚薄片在130℃时以8MPa压力相互压力接合，以获得层叠体。
(5)接着，在600℃时在氮气中对所获得的层叠体进行5小时脱脂，之后，在1,890℃、压力15MPa的条件下进行5小时热压，以获得3mm厚的氮化铝板状体。
把该板状体切割成直径为230mm的圆板状形状，以获得一种陶瓷基板31，该陶瓷基板31包括：厚度为5μm、宽度为2.4mm的电阻加热元件320；厚度为20μm、宽度为10mm的导体电路380；以及厚度为6μm的吸盘正电极静电层32a和吸盘负电极静电层32b。
(6)接着，在采用金刚石磨石对在步骤(5)获得的陶瓷基板31进行研磨之后，把掩模置于其上，并采用玻璃珠进行喷射处理，在表面内形成用于热电偶的有底孔300，并且把在陶瓷基板31的底面31b内形成填充导电体的贯通孔的部分挖空，以形成盲孔390。
(7)通过使用一种组成物并采用喷雾干燥法来制成颗粒，该组成物是通过将以下各项进行混合而获得的，即：氮化铝粉末(Tokuyama公司制造，平均粒径为1.1μm)，按重量计为100份；Y2O3(平均粒径为0.4μm)，按重量计为4份；基于丙烯酸树脂的粘合剂，按重量计为11.5份；分散剂，按重量计为0.5份；以及由1-丁醇和乙醇组成的醇，按重量计为53份。然后，把该颗粒置于管状模内，在1890℃时常压烧结，并对其端面进行研磨，以便具有0.5μm的表面粗糙度Ra，并获得一种长度为200mm、外径为52mm、内径为39mm的氮化铝制筒状体。
(8)之后，采用丝网印刷法把0.05mol/L氯化钇的水溶液施加给在陶瓷基板31的底面31b内不形成电阻加热元件32的区域，使筒状体的端面与该区域接触并在1,890℃进行加热，以使陶瓷基板31和筒状体37接合。使筒状体37接合是为了把盲孔390设在内径的内部。
(9)接着，使用Ag/Ni铜焊材料(Ag：按重量计为80％，Ni：按重量计为20％，回流温度：1000℃)，把外部端子360安装到筒状体37内侧的盲孔390上。使导电线331通过插座350与外部端子360连接。
(10)之后，把用于控制温度的热电偶插入有底孔300内，并把硅溶胶填充到该孔内，并在190℃时进行2小时硬化以使凝胶发生，从而制造一种陶瓷接合体，该陶瓷接合体包括：陶瓷基板，其能够用作静电吸盘，并具有静电电极、电阻加热元件、导体电路以及通路孔和填充导电体的贯通孔；以及筒状体，其采用氮化铝制成，并与基板的底面接合。
(实例2)陶瓷加热器的制造(参见图1～3和图9)
(1)通过形成一种组成物并采用刮刀法来获得厚度为0.47mm的生胚薄片，该组成物是通过将以下各项进行混合而获得的，即：氮化铝粉末(Tokuyama公司制造，平均粒径为1.1μm)，按重量计为100份；三氧化二钇(Y2O3：三氧化二钇，平均粒径为0.4μm)，按重量计为4份；基于丙烯酸树脂的粘合剂，按重量计为11.5份；分散剂，按重量计为0.5份；以及由1-丁醇和乙醇组成的醇，按重量计为53份。
(2)接着，在使生胚薄片在80℃时干燥5小时之后，如图1所示，通过穿孔来形成以下部分，即：作为用于使提升销通过以便输送硅晶片的贯通孔的部分15；作为通路孔630的部分；以及作为填充导电体的贯通孔63、63’的部分。
(3)通过将以下各项进行混合来制成导体浆料A，即：平均粒径为1μm的碳化钨粒子，按重量计为100份；丙烯酸粘合剂，按重量计为3.0份；α-萜品醇溶剂，按重量计为3.5份；以及分散剂，按重量计为0.3份。
而且，通过将以下各项进行混合来制成导体浆料B，即：平均粒径为3μm的钨粒子，按重量计为100份；丙烯酸粘合剂，按重量计为1.9份；α-萜品醇溶剂，按重量计为3.7份；以及分散剂，按重量计为0.2份。
采用丝网印刷法把导体浆料A印刷在设有作为通路孔的部分630的生胚薄片上，以形成用于电阻加热元件的导体浆料层62。把印刷的图形调整为图1所示的同心圆图形，并且把导体浆料层62的宽度调整为10mm，并把厚度调整为12μm。
随后，采用丝网印刷法把导体浆料A印刷在设有作为填充导电体的贯通孔的部分63’的生胚薄片上，以形成用于导体电路的导体浆料层68。把印刷图形调整为带状形状。
在上述步骤中，在筒状体接合部分的上方区域不印刷导体浆料A。
把导体浆料B填充到作为通路孔的部分630内以及作为填充导电体的贯通孔的部分63、63’内。
在印刷了导体浆料层62并进行了上述处理的生胚薄片的上侧(加热面侧)，使不印刷导体浆料的37张生胚薄片层叠，并且在所得的生胚薄片的下侧，使不印刷导体浆料层的12张生胚薄片重叠，并使所得的生胚薄片在130℃时以8MPa压力相互压力接合，以获得层叠体。
(4)接着，在600℃时在氮气中对所获得的层叠体进行5小时脱脂，并在1,890℃、压力15MPa的条件下进行10小时热压，以获得3mm厚的氮化铝板状体。
把该板状体切割成直径为230mm的圆板状形状，以获得一种陶瓷基板31，该陶瓷基板31包括：厚度为6μm、宽度为10mm的电阻加热元件12；厚度为20μm、宽度为10mm的导体电路18；以及通路孔130和填充导电体的贯通孔13、13’。
(5)接着，把在陶瓷基板11的底面11b内形成填充导电体的贯通孔13、13’的部分挖空，以形成盲孔19。
(6)通过使用一种组成物并采用喷雾干燥法来制成颗粒，该组成物是通过将以下各项进行混合而获得的，即：氮化铝粉末(Tokuyama公司制造，平均粒径为1.1μm)，按重量计为100份；Y2O3(平均粒径为0.4μm)，按重量计为4份；基于丙烯酸树脂的粘合剂，按重量计为11.5份；分散剂，按重量计为0.5份；以及由1-丁醇和乙醇组成的醇，按重量计为53份。然后，把该颗粒置于管状模具内，在1890℃时常压烧结，并对其端面进行研磨，以便具有0.5μm的表面粗糙度Ra，从而获得一种长度为200mm、外径为52mm、内径为39mm的由氮化铝制成的筒状体17。
(7)之后，采用丝网印刷法把0.05mol/L氯化钇的水溶液施加给在陶瓷基板11的底面11b内不形成电阻加热元件12的区域，使筒状体17的端面与该区域接触并在1890℃进行加热，以使陶瓷基板11和筒状体17接合。使筒状体17接合是为了把盲孔19设在内径的内部。
(8)接着，使用Ag/Ni铜焊材料(Ag：按重量计为80％，Ni：按重量计为20％)，把外部端子23安装到筒状体17内侧的盲孔19上。使导电线230通过插座25与外部端子23连接。
(9)之后，把用于控制温度的热电偶插入有底孔14内，并把硅溶胶填充到该孔内，并在190℃时进行2小时硬化以使凝胶发生，从而制造一种陶瓷接合体，该陶瓷接合体包括：陶瓷基板，其能够用作陶瓷加热器，该陶瓷加热器包括电阻加热元件、导体电路以及通路孔和填充导电体的贯通孔；以及筒状体，其采用氮化铝制成，并与基板的底面接合。
(实例3)
在本实例中，如图10所示，陶瓷接合体42的制造方式与实例1相同，只不过形成图形是为了使电阻加热元件42存在于筒状体17和陶瓷基板41的接合界面的上方区域(区域A)的大部分(在平面图中，接合界面面积的80％，因此，不存在电阻加热元件的区域为20％)。另外，采用Ag/Ni铜焊材料(未示出)，通过贯通孔43，使电阻加热元件42与外部端子23接合。
(比较例1)
陶瓷加热器的制造方式与实例1相同，只不过在实例1的步骤(4)，在筒状体接合部分的上方区域也印刷导体浆料A，以形成同心圆状电阻加热元件。
(比较例2)
陶瓷加热器的制造方式与实例2相同，只不过在实例2的步骤(3)，在筒状体接合部分的上方区域也印刷导体浆料A，以形成同心圆状电阻加热元件。
(比较例3)
陶瓷加热器的制造方式与实例1相同，只不过在实例1的步骤(8)，通过把一种导体浆料施加给陶瓷基板31和筒状体37的接合部分，然后在1890℃时进行加热，使陶瓷基板31和筒状体37通过陶瓷接合层相互接合，该导体浆料是通过将以下各项进行混合而制成的，即：钨粒子(Tokuyama公司制造，平均粒径为1.1μm)，按重量计为100份；三氧化二钇(Y2O3：三氧化二钇，平均粒径为0.4μm)，按重量计为4份；基于丙烯酸树脂的粘合剂，按重量计为11.5份；分散剂，按重量计为0.5份；以及由1-丁醇和乙醇组成的醇，按重量计为53份。
对于分别在实例1～3和比较例1～3中获得的陶瓷接合体，进行了以下评估试验，并且下表1示出了结果。
(1)破坏强度的测量
进行弯曲强度试验是为了测量接合面的破坏强度。
(2)热循环试验
通过使把温度保持在25℃然后提高到450℃的热循环重复500次，确认各筒状体和陶瓷基板的接合部分是否发生破裂。
(3)耐腐蚀性的评估
向各实例和比较例的各陶瓷接合体的各陶瓷基板和筒状体的接合部分吹送CF4气体，并通过目视观察来观察腐蚀的发生。
表1
| 破坏强度(MPa) | 热循环试验 | 腐蚀的发生 | 不形成导电体的面积的面积比率(％) | |
| 实例1 | 500 | 不发生破裂 | 未观察到 | 100 |
| 实例2 | 540 | 不发生破裂 | 未观察到 | 83 |
| 实例3 | 440 | 不发生破裂 | 未观察到 | 5 |
| 比较例1 | 300 | 发生破裂 | 观察到 | 0 |
| 比较例2 | 200 | 发生破裂 | 观察到 | 0 |
| 比较例3 | 240 | 发生破裂 | 观察到 | 0 |
上述表1所示的结果表明，根据破坏强度，实例1～3的陶瓷接合体具有充分高的接合强度，并且在热循环试验中未发生破裂。
而且，在陶瓷基板和筒状体的接合部分中，也未发生由CF4气体引起的腐蚀。
另一方面，对于比较例1和2的陶瓷加热器，接合强度较低，并且在所有陶瓷加热器中都发生破裂。而且，在这些陶瓷加热器的接合部分，观察到由CF4气体腐蚀的部分。
一般认为，对于比较例1、2的陶瓷加热器，由于电阻加热元件形成在陶瓷基板和筒状体的接合界面的上方区域，因而电阻加热元件会阻碍在陶瓷基板内包含的烧结助剂扩散到基板的表面，从而与根据实例1和2的陶瓷加热器相比，接合界面中的烧结助剂浓度较低。
并且，对于根据比较例3的陶瓷加热器，在与陶瓷基板和筒状体的陶瓷接合层的界面，发现发生了破裂和腐蚀。
(试验例1)
除了以下以外，多个类型的陶瓷加热器的制造方式与实例1相同。也就是说，在实例1的步骤(4)中，在印刷作为电阻加热元件的导体浆料时，在接合界面的上方区域未形成电阻加热元件的区域面积(不形成导电体的面积)与上述接合界面面积之比发生各种变化，并且对各自获得的陶瓷加热器进行弯曲强度试验，以测量各自接合面的破坏强度。图11示出了结果。
图11所示结果表明，发现当不形成导电体的面积的比率等于或大于5％时，接合强度急剧增加。
一般认为，当不形成导电体的面积的比率等于或大于5％时，烧结助剂充分扩散，并且接合界面中的烧结助剂浓度增加，从而使接合强度较高。
并且，还发现，如果不形成导电体的面积的比率超过50％，则即使在600℃时，也获得超过500MPa的破坏强度。
工业可应用性
如上所述，在本发明的陶瓷接合体中，在陶瓷基板和筒状体的接合界面的上方区域以外的区域形成电阻加热元件，从而使在陶瓷基板内所含的烧结助剂在向基板表面扩散过程中不会受到电阻加热元件的阻碍，并可到达与筒状体的接合界面，因此可使陶瓷基板与陶瓷制筒状体相互牢固接合。
Claims (4)
1.一种陶瓷接合体，该陶瓷接合体包括：
陶瓷基板，其内部设有导电体；以及
陶瓷体，其与所述陶瓷基板的底面接合；
其中，
所述陶瓷接合体具有在所述陶瓷基板和所述陶瓷体之间的接合界面的上方区域的至少一部分不形成导电体的区域。
2.根据权利要求1所述的陶瓷接合体，
其中，
在所述陶瓷基板和所述陶瓷体之间的接合界面的所述上方区域不形成导电体的区域的面积等于或大于接合界面面积的5％。
3.根据权利要求1或2所述的陶瓷接合体，
其中，
所述陶瓷基板的接合界面的所述上方区域中的烧结助剂的浓度高于所述导电体的下方区域中的烧结助剂的浓度。
4.根据权利要求1～3中的任何一项所述的陶瓷接合体，
其中，
陶瓷接合体还包括静电电极，并用作装有加热装置的静电吸盘。
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| US (1) | US6921881B2 (zh) |
| EP (1) | EP1422754A1 (zh) |
| JP (1) | JPWO2003015157A1 (zh) |
| KR (1) | KR20040031691A (zh) |
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| WO (1) | WO2003015157A1 (zh) |
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- 2002-08-12 KR KR10-2003-7009501A patent/KR20040031691A/ko not_active Application Discontinuation
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| CN108738173B (zh) * | 2017-04-19 | 2021-04-06 | 日本特殊陶业株式会社 | 陶瓷构件 |
| CN114175851A (zh) * | 2019-07-16 | 2022-03-11 | 日本碍子株式会社 | 带轴的陶瓷加热器 |
Also Published As
| Publication number | Publication date |
|---|---|
| US6921881B2 (en) | 2005-07-26 |
| KR20040031691A (ko) | 2004-04-13 |
| EP1422754A1 (en) | 2004-05-26 |
| US20040071945A1 (en) | 2004-04-15 |
| WO2003015157A1 (fr) | 2003-02-20 |
| JPWO2003015157A1 (ja) | 2004-12-02 |
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