JPWO2021054322A1 - 静電チャックヒータ - Google Patents
静電チャックヒータ Download PDFInfo
- Publication number
- JPWO2021054322A1 JPWO2021054322A1 JP2021518827A JP2021518827A JPWO2021054322A1 JP WO2021054322 A1 JPWO2021054322 A1 JP WO2021054322A1 JP 2021518827 A JP2021518827 A JP 2021518827A JP 2021518827 A JP2021518827 A JP 2021518827A JP WO2021054322 A1 JPWO2021054322 A1 JP WO2021054322A1
- Authority
- JP
- Japan
- Prior art keywords
- heating element
- electrostatic chuck
- weight
- resistance heating
- jumper wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 62
- 238000010438 heat treatment Methods 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 39
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 37
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 38
- 239000000945 filler Substances 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000020169 heat generation Effects 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000005219 brazing Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
- H05B3/03—Electrodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/18—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor the conductor being embedded in an insulating material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
- H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/68—Heating arrangements specially adapted for cooking plates or analogous hot-plates
- H05B3/74—Non-metallic plates, e.g. vitroceramic, ceramic or glassceramic hobs, also including power or control circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Resistance Heating (AREA)
Abstract
Description
アルミナ基板の上面にウエハ載置面が設けられ、前記ウエハ載置面側から静電電極、ゾーンごとに設けられた抵抗発熱体及び前記抵抗発熱体に給電する多段のジャンパ線がこの順に前記アルミナ基板に埋設され、前記抵抗発熱体と前記ジャンパ線とを上下方向に連結する発熱体連結ビア及び前記ジャンパ線へ給電するために外部へ取り出す給電ビアを備えた静電チャックヒータであって、
前記発熱体連結ビア及び前記給電ビアは、金属ルテニウムを10重量%以上95重量%以下含み、前記アルミナ基板との熱膨張係数差が±0.6ppm/Kの範囲に入る、
ものである。
Claims (7)
- アルミナ基板の上面にウエハ載置面が設けられ、前記ウエハ載置面側から静電電極、ゾーンごとに設けられた抵抗発熱体及び前記抵抗発熱体に給電する多段のジャンパ線がこの順に前記アルミナ基板に埋設され、前記抵抗発熱体と前記ジャンパ線とを上下方向に連結する発熱体連結ビア及び前記ジャンパ線へ給電するために外部へ取り出す給電ビアを備えた静電チャックヒータであって、
前記発熱体連結ビア及び前記給電ビアは、金属ルテニウムを10重量%以上95重量%以下含み、前記アルミナ基板との熱膨張係数差が±0.6ppm/Kの範囲に入る、
静電チャックヒータ。 - 前記発熱体連結ビア及び前記給電ビアの金属ルテニウムの割合は、20重量%以上95重量%以下である、
請求項1に記載の静電チャックヒータ。 - 前記発熱体連結ビア及び前記給電ビアは、金属ルテニウム以外にフィラー成分を含む、
請求項1又は2に記載の静電チャックヒータ。 - 前記静電電極、前記抵抗発熱体及び前記ジャンパ線は、金属ルテニウムを10重量%以上95重量%以下含み、前記アルミナ基板との熱膨張係数差が±0.6ppm/Kの範囲に入る、
請求項1〜3のいずれか1項に記載の静電チャックヒータ。 - 前記静電電極、前記抵抗発熱体及び前記ジャンパ線の金属ルテニウムの割合は、20重量%以上95重量%以下である、
請求項4に記載の静電チャックヒータ。 - 前記静電電極、前記抵抗発熱体及び前記ジャンパ線は、金属ルテニウム以外にフィラー成分を含む、
請求項4又は5に記載の静電チャックヒータ。 - 前記フィラー成分は、アルミナ及び/又はジルコニアである、
請求項3又は6に記載の静電チャックヒータ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019169348 | 2019-09-18 | ||
JP2019169348 | 2019-09-18 | ||
PCT/JP2020/034909 WO2021054322A1 (ja) | 2019-09-18 | 2020-09-15 | 静電チャックヒータ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2021054322A1 true JPWO2021054322A1 (ja) | 2021-11-18 |
JP7429228B2 JP7429228B2 (ja) | 2024-02-07 |
Family
ID=74884215
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021518827A Active JP7429228B2 (ja) | 2019-09-18 | 2020-09-15 | 静電チャックヒータ |
Country Status (5)
Country | Link |
---|---|
US (1) | US11837490B2 (ja) |
JP (1) | JP7429228B2 (ja) |
KR (1) | KR102570817B1 (ja) |
CN (1) | CN113039863B (ja) |
WO (1) | WO2021054322A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2023088622A (ja) | 2021-12-15 | 2023-06-27 | 日本碍子株式会社 | ウエハ載置台 |
JP7471566B2 (ja) | 2022-09-28 | 2024-04-22 | Toto株式会社 | 静電チャック |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09190873A (ja) * | 1996-01-05 | 1997-07-22 | Matsushita Electric Ind Co Ltd | 面状発熱体の製造法 |
JP2014075525A (ja) * | 2012-10-05 | 2014-04-24 | Ngk Spark Plug Co Ltd | 積層発熱体、静電チャック、及びセラミックヒータ |
WO2016042957A1 (ja) * | 2014-09-16 | 2016-03-24 | 日本碍子株式会社 | セラミック構造体、基板保持装置用部材及びセラミック構造体の製法 |
JP2017228360A (ja) * | 2016-06-20 | 2017-12-28 | 日本特殊陶業株式会社 | 加熱部材及び静電チャック |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030098299A1 (en) * | 2000-03-06 | 2003-05-29 | Ibiden Co., Ltd. | Ceramic heater |
JP2001313271A (ja) | 2000-04-27 | 2001-11-09 | Hitachi Ltd | 半導体製造方法 |
JP2002026338A (ja) | 2000-07-05 | 2002-01-25 | Toyota Central Res & Dev Lab Inc | 半導体装置及びその製造方法 |
JP2005005057A (ja) | 2003-06-10 | 2005-01-06 | Kyocera Corp | セラミックヒータ、並びにセラミックヒータ構造体 |
JP2006222008A (ja) * | 2005-02-14 | 2006-08-24 | Kyocera Corp | セラミックヒータ及びヒータ内蔵電子部品 |
JP2006232694A (ja) | 2005-02-23 | 2006-09-07 | Univ Nihon | 難溶性医薬とシクロデキストリン化合物からなる複合体及びその製造方法 |
JP5341416B2 (ja) | 2008-07-17 | 2013-11-13 | 日本電信電話株式会社 | X線集光レンズ |
WO2014103712A1 (ja) | 2012-12-28 | 2014-07-03 | 大学共同利用機関法人 高エネルギー加速器研究機構 | 放射性テクネチウム99m含有物質生成方法及び生成装置 |
JP6118149B2 (ja) | 2013-03-21 | 2017-04-19 | 東京エレクトロン株式会社 | ルテニウム膜の形成方法および記憶媒体 |
JP6139970B2 (ja) * | 2013-05-13 | 2017-05-31 | クアーズテック株式会社 | 電極埋め込み石英部材及びその製造方法 |
JP6319023B2 (ja) * | 2013-09-27 | 2018-05-09 | 住友大阪セメント株式会社 | 静電チャック装置 |
JP6377504B2 (ja) | 2014-11-25 | 2018-08-22 | メタローテクノロジーズジャパン株式会社 | 電極形成用の導電性ペースト |
JP2017029876A (ja) | 2015-07-29 | 2017-02-09 | 寿典 幕田 | 気泡から作る中空粒子およびその製造方法 |
WO2017029876A1 (ja) | 2015-08-20 | 2017-02-23 | 日本碍子株式会社 | 静電チャックヒータ |
WO2017170374A1 (ja) * | 2016-03-29 | 2017-10-05 | 日本碍子株式会社 | 静電チャックヒータ |
JP6838941B2 (ja) | 2016-05-27 | 2021-03-03 | オリンパス株式会社 | 超音波振動子および超音波内視鏡装置 |
JP6698476B2 (ja) | 2016-08-30 | 2020-05-27 | 京セラ株式会社 | 静電吸着用部材 |
JP6973734B2 (ja) | 2017-11-29 | 2021-12-01 | 昭和電工株式会社 | アルミナ質焼結体用組成物及びその製造方法、並びにアルミナ質焼結体の製造方法 |
-
2020
- 2020-09-15 WO PCT/JP2020/034909 patent/WO2021054322A1/ja active Application Filing
- 2020-09-15 KR KR1020217010473A patent/KR102570817B1/ko active IP Right Grant
- 2020-09-15 CN CN202080006280.0A patent/CN113039863B/zh active Active
- 2020-09-15 JP JP2021518827A patent/JP7429228B2/ja active Active
-
2021
- 2021-04-07 US US17/224,183 patent/US11837490B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09190873A (ja) * | 1996-01-05 | 1997-07-22 | Matsushita Electric Ind Co Ltd | 面状発熱体の製造法 |
JP2014075525A (ja) * | 2012-10-05 | 2014-04-24 | Ngk Spark Plug Co Ltd | 積層発熱体、静電チャック、及びセラミックヒータ |
WO2016042957A1 (ja) * | 2014-09-16 | 2016-03-24 | 日本碍子株式会社 | セラミック構造体、基板保持装置用部材及びセラミック構造体の製法 |
JP2017228360A (ja) * | 2016-06-20 | 2017-12-28 | 日本特殊陶業株式会社 | 加熱部材及び静電チャック |
Also Published As
Publication number | Publication date |
---|---|
CN113039863A (zh) | 2021-06-25 |
US11837490B2 (en) | 2023-12-05 |
CN113039863B (zh) | 2023-03-28 |
KR20210044899A (ko) | 2021-04-23 |
JP7429228B2 (ja) | 2024-02-07 |
WO2021054322A1 (ja) | 2021-03-25 |
US20210225683A1 (en) | 2021-07-22 |
KR102570817B1 (ko) | 2023-08-24 |
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