WO2017170374A1 - 静電チャックヒータ - Google Patents
静電チャックヒータ Download PDFInfo
- Publication number
- WO2017170374A1 WO2017170374A1 PCT/JP2017/012345 JP2017012345W WO2017170374A1 WO 2017170374 A1 WO2017170374 A1 WO 2017170374A1 JP 2017012345 W JP2017012345 W JP 2017012345W WO 2017170374 A1 WO2017170374 A1 WO 2017170374A1
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- WO
- WIPO (PCT)
- Prior art keywords
- heater
- wire
- electrostatic chuck
- wires
- jumper
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
Definitions
- the present invention relates to an electrostatic chuck heater.
- Patent Document 1 since the heating member is made of a relatively high-resistance material such as titanium, tungsten, or molybdenum, when the heating member is finely wired, there is a problem that the temperature rises excessively. Therefore, it was necessary to widen the wiring interval of the heating member, but if doing so, there was a problem that the temperature difference between the portion where the heating member exists and the portion where it does not exist spreads, and the temperature uniformity is impaired.
- a relatively high-resistance material such as titanium, tungsten, or molybdenum
- the present invention has been made to solve the problems described above, and its main object is to improve the thermal uniformity of a wafer as compared with the prior art.
- the electrostatic chuck heater of the present invention is An electrostatic chuck heater in which a sheet heater having a heater wire embedded in a resin sheet is disposed between the electrostatic chuck and the support table,
- the heater wire is provided for each of a plurality of zones of the resin sheet, and is constituted by a copper wire wired so as to extend over the entire zone in a one-stroke manner from one end to the other end. It is a thing.
- the heater wire provided for each of the multiple zones of the resin sheet is made of copper wire. Copper has a lower electrical resistance than titanium, tungsten, molybdenum and the like. Therefore, even if the heater wires are finely wired, the temperature does not rise excessively and the wire intervals can be narrowed. As a result, the temperature difference between the portion where the heater wire is present and the portion where the heater wire does not exist on the wafer mounting surface of the electrostatic chuck is reduced, and the heat uniformity of the wafer is improved.
- the electrostatic chuck may be a ceramic sintered body in which an electrostatic electrode is embedded.
- the support may be made of metal or may have a refrigerant flow path inside.
- the heater wires may be wired in a width of 1 mm. By so doing, the wiring spacing of the heater wire can be made sufficiently narrow, and the thermal uniformity of the wafer is further improved.
- One or more heater wires may be wired in a width of 1 mm, but it is preferable to wire five or more.
- the heater wire may have a thickness of 35 ⁇ m or less. By so doing, the resin sheet can be made thinner, so the thermal resistance between the electrostatic chuck and the support can be reduced.
- the lower limit value of the thickness of the heater wire is not particularly limited, but may be a production limit value (for example, 4 ⁇ m).
- the sheet heater has a first electrode area and a second electrode area which are parallel to the surface of the sheet heater and different in height, and the first electrode area is provided with the heater wire.
- the second electrode region may be a region in which a plurality of jumper wires for supplying power to the heater wires are provided, and the jumper wires may be formed of copper wires.
- the jumper wire since the power supplied to each heater electrode can be individually controlled, it is easy to achieve high heat uniformity.
- the jumper wire is formed of a copper wire having a small electric resistance (specific resistance), the jumper wire hardly generates heat even if the cross-sectional area is small. Therefore, the layout can be made with high density.
- the jumper wire may have nine or more copper wires in a width of 10 mm. Moreover, 20 or less copper wires may be wired in 10 mm width as a jumper wire.
- the copper wire may have a variation in line width (a value obtained by subtracting the line width of the narrowest portion from the line width of the widest portion) to 4 ⁇ m or less Good. If the shape of the copper wire is produced by wet etching, the variation in the line width of the copper wire can be reduced to 4 ⁇ m or less. In this case, even when the design value of the line-to-line distance is set to 10 to several tens ⁇ m, adjacent lines do not come in contact with each other when the copper line is actually manufactured.
- the copper wire preferably has a purity of 99.9% by mass or more. In general, the higher the purity of copper, the lower the electric resistance, and therefore, it is suitable for use in the heater wire or jumper wire of the electrostatic chuck heater of the present invention.
- FIG. 2 is a cross-sectional view showing a schematic configuration of an electrostatic chuck heater 20.
- FIG. 2 is a perspective view showing an internal structure of a seat heater 30.
- FIG. 7 is a plan view of a heater wire 34 provided in zone Z1.
- FIG. 18 is a manufacturing process diagram of the heater wire 34.
- FIG. 1 is a cross-sectional view showing a schematic configuration of the electrostatic chuck heater 20
- FIG. 2 is a perspective view showing an internal structure of the seat heater 30, and
- FIG. 3 is a plan view of a heater wire 34 provided in the zone Z1.
- the electrostatic chuck heater 20 is a device for attracting and holding the wafer W on the wafer mounting surface 22 a.
- the electrostatic chuck heater 20 includes an electrostatic chuck 22, a sheet heater 30 and a support 60.
- the lower surface of the electrostatic chuck 22 and the upper surface 30 a of the sheet heater 30 are adhered to each other via a first bonding sheet 81.
- the upper surface of the support 60 and the lower surface 30 b of the seat heater 30 are bonded to each other through the second bonding sheet 82.
- As each bonding sheet 81, 82 a sheet having an acrylic resin layer on both sides of a core made of polypropylene, a sheet having a silicone resin layer on both sides of a core made of polyimide, a sheet of epoxy resin alone, etc. may be mentioned. .
- the electrostatic chuck 22 is a disk-shaped member, and the electrostatic electrode 24 is embedded in the ceramic sintered body 26.
- the ceramic sintered body 26 include an aluminum nitride sintered body and an alumina sintered body.
- the upper surface of the electrostatic chuck 22 is a wafer placement surface 22 a on which the wafer W is placed.
- the thickness of the ceramic sintered body 26 is not particularly limited, but is preferably 0.5 to 4 mm.
- the seat heater 30 is a disk-shaped member, and has a heat-resistant resin sheet 32 in which a heater wire 34 and jumper wires 36 and 37 are incorporated.
- Examples of the material of the resin sheet 32 include polyimide resin and liquid crystal polymer.
- the seat heater 30 has a first electrode area A1 and a second electrode area A2 (see FIG. 2) which are parallel to the upper surface 30a of the seat heater 30 and differ in height.
- the first electrode area A1 is divided into a large number of zones Z1 (for example, 100 zones or 300 zones).
- a heater wire 34 made of a copper wire is wired in a zigzag manner so as to extend over the entire zone Z1 from one end 34a to the other end 34b in a single stroke manner.
- an imaginary line indicated by a dotted line is drawn in the first electrode region A1, and a portion surrounded by the imaginary line is set as a zone Z1.
- the heater wire 34 is shown in only one zone Z1, but the same heater wire 34 is provided in the other zone Z1.
- the outer shape of the seat heater 30 is indicated by an alternate long and short dash line.
- FIG. 3 is a plan view of the heater wire 34 provided in one zone Z1.
- the heater wire 34 is preferably a copper wire of high purity (99.9 mass% or more), and preferably 50 or less in a 1 mm width.
- One or more heater wires 34 may be wired in a width of 1 mm, but five or more wires may be wired.
- the line width of the heater wire 34 may be 10 ⁇ m or more (preferably 20 to 80 ⁇ m, more preferably 40 to 60 ⁇ m), and the distance between the lines may be 10 ⁇ m or more (preferably 20 to 80 ⁇ m, more preferably 40 to 60 ⁇ m).
- the line width of the heater wire 34 is 10 ⁇ m and the distance between the wires is 10 ⁇ m
- 50 heater wires 34 can be wired to a width of 1 mm.
- the line width of the heater wire 34 is 50 ⁇ m and the distance between the lines is 50 ⁇ m
- ten heater wires 34 can be wired to a width of 1 mm.
- the width of the heater wire 34 is 100 ⁇ m and the distance between the wires is 100 ⁇ m
- five heater wires 34 can be wired to a width of 1 mm.
- the heater wire 34 may have a thickness of 35 ⁇ m or less.
- the lower limit of the thickness of the heater wire 34 is not particularly limited, but may be a production limit (for example, 4 ⁇ m).
- the heater wire 34 may have a variation in line width (a value obtained by subtracting the line width of the narrowest portion from the line width of the widest portion) may be within 4 ⁇ m or less. If the shape of the heater wire 34 is manufactured by wet etching, the variation of the line width can be suppressed to 4 ⁇ m or less.
- a jumper wire 36 for feeding (the positive electrode side) formed of a copper wire connected to one end 34a of each heater wire 34 and the other end of each heater wire 34 A ground (minus pole) jumper wire 37 formed of a copper wire connected to 34b is provided. Therefore, the number of jumper wires 36 and the number of jumper wires 37 both match the number of heater wires 34.
- the second electrode area A2 is divided into zones Z2 of which the number is smaller than the number of zones Z1 (for example, 6 zones or 8 zones).
- an imaginary line indicated by a dotted line is drawn in the second electrode region A2, and a portion surrounded by the imaginary line is set as a zone Z2.
- the jumper lines 36 and 37 (a part) are shown in only one zone Z2, but similar jumper lines 36 and 37 are provided in the other zone Z2.
- a plurality of heater wires 34 that fall within the projection area when one zone Z2 is projected onto the first electrode area A1 will be described as belonging to the same group.
- one end 34a of the heater wire 34 belonging to one set is vertically penetrated between the first electrode area A1 and the second electrode area A2 at the end 36a of the jumper wire 36 in the zone Z2 corresponding to the set Not connected via vias.
- the other end 36b of the jumper wire 36 is drawn to the outer peripheral area 38 provided in the zone Z2.
- the other end 34b of the heater wire 34 is connected to one end 37a of the jumper wire 37 in the same zone Z2 through a via (not shown) vertically penetrating between the first electrode area A1 and the second electrode area A2. It is connected.
- the other end 37b of the jumper wire 37 is drawn out to the outer peripheral area 38 provided in the zone Z2.
- the other ends 36 b and 37 b of the jumper wires 36 and 37 connected to the heater wires 34 belonging to the same set are collectively arranged in one outer peripheral region 38.
- the jumper lands 46b and 47b connected with the other ends 36b and 37b of the jumper wires 36 and 37 via vias not shown are arranged side by side. It is done.
- the jumper lands 46b and 47b are also made of copper.
- the jumper wire 36 may have nine or more (preferably nine or more and twenty or less) copper wires in a width of 10 mm.
- the jumper wire 36 may have a thickness of 35 ⁇ m or less.
- the lower limit value of the thickness of the jumper wire 36 is not particularly limited, but may be a manufacturing limit value (for example, 4 ⁇ m).
- the jumper line 36 may have a variation in line width within 4 ⁇ m or less. If the shape of the jumper wire 36 is manufactured by wet etching, the variation of the line width can be within the range of 4 ⁇ m or less.
- the wiring density and thickness of the jumper wire 37, the manufacturing method, and the like are the same as those of the jumper wire 36.
- the support base 60 is a disk-shaped member made of a metal such as Al or an Al alloy, and a refrigerant flow path 62 is provided inside.
- a chiller 70 for adjusting the temperature of the refrigerant is connected to the inlet 62 a and the outlet 62 b of the refrigerant flow channel 62.
- the support base 60 also has a through hole or the like for moving up and down a lift pin for lifting up the wafer W.
- connection FPC 75 is a cable in which metal wires covered with a resin film are bundled in a band shape.
- the electrostatic chuck heater 20 is set in a vacuum chamber (not shown), and the wafer W is mounted on the wafer mounting surface 22 a of the electrostatic chuck 22. Then, the inside of the vacuum chamber is depressurized by a vacuum pump and adjusted to a predetermined degree of vacuum, and a direct current voltage is applied to the electrostatic electrode 24 of the electrostatic chuck 22 to generate a Coulomb force or Johnson Rabeck force. W is attracted and fixed to the wafer mounting surface 22 a of the electrostatic chuck 22. Next, the inside of the vacuum chamber is set to a process gas atmosphere at a predetermined pressure (for example, several tens to several hundreds Pa).
- a predetermined pressure for example, several tens to several hundreds Pa.
- a controller controls the temperature of the wafer W to be a predetermined target temperature. Specifically, the controller inputs a detection signal from a temperature measuring sensor (not shown) that measures the temperature of wafer W, and each heater wire 34 is set such that the measured temperature of wafer W matches the target temperature. It controls the current supplied and the temperature of the refrigerant circulated in the refrigerant channel 62. In particular, the controller finely controls the current supplied to each heater wire 34 so that the temperature distribution of the wafer W does not occur.
- the temperature sensor may be embedded in the resin sheet 32 or may be bonded to the surface of the resin sheet 32. In the electrostatic chuck heater 20, since the temperature can be finely controlled for each zone by the large number of heater wires 34, it is possible to achieve high uniformity of heat uniformity.
- a disk member made of a ceramic molded body or a sintered body is prepared, and the electrostatic electrode 24 is formed on one surface thereof.
- the electrostatic electrode 24 may be formed by screen printing an electrode paste, or may be formed by PVD, CVD, plating or the like.
- another disc-like formed body having the same diameter as the disc member is laminated on the surface of the disc member on which the electrostatic electrode 24 is formed to form a laminate.
- This laminate is hot-press fired to obtain a ceramic sintered body 26 in which the electrostatic electrode 24 is embedded.
- the ceramic sintered body 26 is adjusted to a desired shape and thickness by processing such as grinding or blasting. Thereby, the electrostatic chuck 22 is obtained.
- a method of manufacturing the seat heater 30 will be described. First, a first resin layer for forming the space between the upper surface 30a of the seat heater 30 and the first electrode region A1 is prepared, and the heater wire 34 is formed on the surface of the first resin layer by known photolithography. Next, a second resin layer is laminated so as to cover the heater wires 34, and jumper wires 36 and 37 are formed on the surface of the second resin layer by known photolithography. At this time, vias electrically connecting the heater wire 34 and the jumper wires 36 and 37 are also provided to penetrate the second resin layer in the vertical direction.
- a third resin layer is laminated so as to cover the jumper lines 36 and 37, and jumper lands 46b and 47b are formed on the surface of the third resin layer by known photolithography. At this time, vias electrically connecting the jumper wires 36 and 37 and the jumper lands 46b and 47b are also provided to penetrate the third resin layer in the vertical direction. Thus, the seat heater 30 is obtained.
- a polyimide resin may be used, or a liquid crystal polymer may be used.
- a manufacturing example of the heater wire 34 will be described below with reference to FIG.
- a copper foil 134 is attached to the entire upper surface of the resin layer 110, a resist layer 140 is formed on the entire upper surface of the copper foil 134, and the resist layer 140 is covered with a mask to have the same shape as the heater wire 34 (see FIG. 3). Pattern formation so that the shape remains (see FIG. 4A).
- the copper foil 134 may be formed by vacuum deposition, sputtering or the like.
- a portion of the copper foil 134 which is not masked by the resist layer 140 is corroded by wet etching and dissolved in an etching solution (see FIG. 4B).
- the resist layer 140 is removed with a stripping solution to complete the heater wire 34 (see FIG. 4C).
- the variation in line width of the heater wire 34 produced by wet etching (the value obtained by subtracting the line width of the narrowest portion from the line width of the widest portion) was measured.
- the design values of the line width were 50 ⁇ m, 100 ⁇ m, 1000 ⁇ m and 2000 ⁇ m. The results are shown in Table 1.
- the variation of the line width was 4 ⁇ m or less in any of the design values.
- wire width was about 60 micrometers.
- wire width can be 4 micrometers or less by producing the jumper wire 36 also by wet etching.
- the heater wire 34 embedded in each zone Z1 of the resin sheet 32 is made of a copper wire. Copper has a lower electrical resistance than titanium, tungsten, molybdenum and the like. Therefore, even if the heater wires 34 are finely wired, the temperature does not rise excessively, and the distance between the wires (wire spacing) can be narrowed. As a result, the temperature difference between the portion where the heater wire 34 is present and the portion where the heater wire 34 does not exist in the wafer mounting surface 22 a of the electrostatic chuck 22 is reduced, and the thermal uniformity of the wafer W is improved.
- the wiring interval of the heater wires 34 can be sufficiently narrowed, so that the thermal uniformity of the wafer W is further improved.
- the thickness of the heater wire 34 is set to 35 ⁇ m or less, the resin sheet 32 can be thinned, so that the thermal resistance between the electrostatic chuck 22 and the support table 60 can be reduced.
- the jumper wires 36 and 37 are also made of a copper wire having a small electrical resistance (specific resistance), heat is not easily generated even if the cross-sectional area is small. Therefore, the jumper lines 36 and 37 can be laid out with high density. For example, in the jumper wires 36 and 37, nine or more copper wires may be wired in a width of 10 mm. In addition, 20 or less copper wires may be wired in the 10 mm width of the jumper wires 36 and 37.
- the copper wires constituting the heater wire 34 and the jumper wires 36 and 37 have a purity of 99.9% by mass or more. In general, the higher the purity of copper, the lower the electrical resistance, and therefore, it is suitable for use as the heater wire 34 or the jumper wires 36, 37 of the electrostatic chuck heater 20.
- the heater wire 34 is formed in a zigzag shape, but it is not particularly limited to this shape, and any shape may be used as long as it can be drawn in a single-stroke manner.
- the resin layer is provided on the heater wire 34 as the structure of the seat heater 30, but even if the resin layer is omitted, the heater wire 34 may be exposed on the upper surface 30a of the seat heater 30. Good.
- the first bonding sheet 81 is disposed to cover the heater wire 34.
- both of the jumper wire 36 for feeding and the jumper wire 37 for grounding are provided in the same second electrode region A2, but the distance between the second electrode region A2 and the lower surface 30b of the seat heater 30
- the third electrode area A3 may be provided parallel to the first and second electrode areas A1 and A2, and one may be provided in the second electrode area A2 and the other in the third electrode area A3.
- first and second electrode regions A1 and A2 are provided one by one, but at least one of the first and second electrode regions A1 and A2 may be multi-layered (multistage).
- the present invention can be used, for example, in a semiconductor manufacturing apparatus that performs plasma processing on a wafer W.
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- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
Description
静電チャックと支持台との間に、樹脂シートにヒータ線が埋設されたシートヒータが配置された静電チャックヒータであって、
前記ヒータ線は、前記樹脂シートの多数のゾーンごとに設けられ、一端から他端まで一筆書きの要領で前記ゾーンの全体に行き渡るように配線された銅線によって構成されている、
ものである。
Claims (7)
- 静電チャックと支持台との間に、樹脂シートにヒータ線が埋設されたシートヒータが配置された静電チャックヒータであって、
前記ヒータ線は、前記樹脂シートの多数のゾーンごとに設けられ、一端から他端まで一筆書きの要領で前記ゾーンの全体に行き渡るように配線された銅線によって構成されている、
静電チャックヒータ。 - 前記ヒータ線は、1mm幅の中に50本以下配線されている、
請求項1に記載の静電チャックヒータ。 - 前記ヒータ線は、厚みが35μm以下である、
請求項1又は2に記載の静電チャックヒータ。 - 前記シートヒータは、前記シートヒータの表面に平行で高さの異なる第1電極領域と第2電極領域を有し、前記第1電極領域は前記ヒータ線が設けられた領域であり、前記第2電極領域は各ヒータ線に給電するジャンパ線が複数設けられた領域であり、前記ジャンパ線は銅線で構成されている、
請求項1~3のいずれか1項に記載の静電チャックヒータ。 - 前記ジャンパ線は、10mm幅の中に前記銅線が9本以上配線されている、
請求項4に記載の静電チャックヒータ。 - 前記銅線は、最も幅の広い部分の線幅から最も幅の狭い部分の線幅を差し引いた値であるばらつきが4μm以下である、
請求項1~5のいずれか1項に記載の静電チャックヒータ。 - 前記銅線は、純度が99.9質量%以上である、
請求項1~6のいずれか1項に記載の静電チャックヒータ。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020177031235A KR102062751B1 (ko) | 2016-03-29 | 2017-03-27 | 정전 척 히터 |
JP2017539699A JP6251461B1 (ja) | 2016-03-29 | 2017-03-27 | 静電チャックヒータ |
CN201780001379.XA CN107534012B (zh) | 2016-03-29 | 2017-03-27 | 静电卡盘加热器 |
US15/791,973 US10930539B2 (en) | 2016-03-29 | 2017-10-24 | Electrostatic chuck heater |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US201662314564P | 2016-03-29 | 2016-03-29 | |
US62/314,564 | 2016-03-29 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US15/791,973 Continuation US10930539B2 (en) | 2016-03-29 | 2017-10-24 | Electrostatic chuck heater |
Publications (1)
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WO2017170374A1 true WO2017170374A1 (ja) | 2017-10-05 |
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PCT/JP2017/012345 WO2017170374A1 (ja) | 2016-03-29 | 2017-03-27 | 静電チャックヒータ |
Country Status (6)
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US (1) | US10930539B2 (ja) |
JP (1) | JP6251461B1 (ja) |
KR (1) | KR102062751B1 (ja) |
CN (1) | CN107534012B (ja) |
TW (1) | TWI725149B (ja) |
WO (1) | WO2017170374A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022054668A1 (ja) * | 2020-09-14 | 2022-03-17 | 株式会社Kelk | ウェーハの温度調節装置 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6773917B2 (ja) * | 2018-07-04 | 2020-10-21 | 日本碍子株式会社 | ウエハ支持台 |
CN113039863B (zh) * | 2019-09-18 | 2023-03-28 | 日本碍子株式会社 | 静电卡盘加热器 |
JP7202326B2 (ja) * | 2020-03-11 | 2023-01-11 | 日本碍子株式会社 | セラミックヒータ |
KR102440417B1 (ko) * | 2020-05-07 | 2022-09-13 | 주식회사 유진테크 | 다구역 온도 제어를 위한 히터 시스템 및 그 히터 시스템을 포함하는 기판 지지 어셈블리 |
JP7364609B2 (ja) * | 2021-02-10 | 2023-10-18 | 日本碍子株式会社 | セラミックヒータ |
US20220282371A1 (en) * | 2021-03-03 | 2022-09-08 | Applied Materials, Inc. | Electrostatic chuck with metal shaft |
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CN107534012B (zh) | 2020-06-09 |
CN107534012A (zh) | 2018-01-02 |
JP6251461B1 (ja) | 2017-12-20 |
US20180047606A1 (en) | 2018-02-15 |
KR20170128604A (ko) | 2017-11-22 |
TWI725149B (zh) | 2021-04-21 |
KR102062751B1 (ko) | 2020-01-06 |
JPWO2017170374A1 (ja) | 2018-04-05 |
TW201811104A (zh) | 2018-03-16 |
US10930539B2 (en) | 2021-02-23 |
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