TWI511229B - 用於半導體處理之具平面加熱區的加熱板及其製造方法 - Google Patents

用於半導體處理之具平面加熱區的加熱板及其製造方法 Download PDF

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TWI511229B
TWI511229B TW099135939A TW99135939A TWI511229B TW I511229 B TWI511229 B TW I511229B TW 099135939 A TW099135939 A TW 099135939A TW 99135939 A TW99135939 A TW 99135939A TW I511229 B TWI511229 B TW I511229B
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Taiwan
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power
heater
power supply
planar heating
heaters
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TW099135939A
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TW201125067A (en
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Harmeet Singh
Keith Gaff
Neil Benjamin
Keith Comendant
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Lam Res Corp
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    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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Description

用於半導體處理之具平面加熱區的加熱板及其製造方法
本發明係關於用於半導體處理之具平面加熱區的加熱板。
隨著各個接續不斷的半導體技術世代，基板直徑趨向增加而電晶體尺寸趨向縮小，以致對於基板處理的精確度與可重複性有更高要求。半導體基板材料(如矽基板)是由包括使用真空腔等等技術來處理。此等技術包括非電漿應用方法，例如電子束沉積，以及電漿應用方法，例如濺鍍沉積、電漿輔助化學氣相沉積(PECVD,plasma-enhanced chemical vapor deposition)、抗蝕層剝除、以及電漿蝕刻。
今日市售的電漿處理系統是那些面臨對於增進的精確度與可重複性有高漲要求的半導體生產機具。電漿處理系統的一個評斷標準為均勻度提升，包括半導體基板表面上的製程結果均勻度，以及以相同名義的輸入參數所處理之一連串基板的製程結果均勻度。基板上均勻度的持續改進係備受期待。這需要電漿腔室具備增進的均勻度、一致性與自我診斷能力等等。
依照一實施例，在半導體電漿處理設備中用以支撐半導體基板的基板支撐組件之加熱板至少包含第一電氣絕緣層；平面加熱區，其至少包含橫向分布在該第一電氣絕緣層各處的第一、第二、第三、與第四平面加熱區；導電供電線路，其至少包含電連接至該第一與第二平面加熱區的第一供電線路，與電連接至該第三與第四平面加熱區的第二供電線路；導電電力回流線路，其至少包含電連接至該第一與第三平面加熱區的第一電力回流線路，與電連接至該第二與第四平面加熱區的第二電力回流線路。
在半導體處理設備中，以放射狀與方位角形式控制基板溫度以達成基板上期望的臨界尺寸(CD,critical dimension)均勻度之要求越變越嚴苛。即使微小的溫度變化也會影響CD至無法接受的程度,而在CD逼近100nm以下的半導體製程時更是如此。
在處理期間，基板支撐組件可用於各式功能，例如支撐基板、調整基板溫度、以及供應射頻電力。基板支撐組件可包含在處理期間用以透過靜電將基板夾在基板支撐組件上之靜電夾頭(ESC,electrostatic chuck)。ESC可為可調式ESC(T-ESC)。在共同受讓的美國專利申請案第6,847,014號與第6,921,724號中有描述一T-ESC，該內容併入此案以供參考。基板支撐組件可包含陶瓷基板支座、液冷散熱裝置(此後稱為冷卻板)、以及多個同心加熱區來達成逐步及放射狀的溫度控制。冷卻板一般會維持在0 ℃與30 ℃之間。加熱器位在冷卻板上，而二者之間具有一層絕熱器。加熱器能維持基板支撐組件的支撐表面的溫度高於冷卻板溫度約0 ℃至80 ℃。藉由改變多個加熱區中的加熱器功率，基板支撐溫度分布就能在中央熱、中央冷、與均勻之間改變。另外，可在高於冷卻板溫度0 ℃至80 ℃的操作範圍中，逐步改變平均的基板支撐溫度。隨著CD因半導體技術的發展而縮小，微小的方向角溫度變化因而亦帶來日漸困難的挑戰。
有幾個原因造成溫度控制不易。首先，許多因素皆可影響熱量傳遞，例如熱源與散熱裝置的位置、移動、媒介的材料與形狀。第二，熱量傳遞為動態過程。除非所探討的系統處於熱平衡，否則熱量傳遞將會發生，且溫度分布與熱量傳遞將隨時間改變。第三，不平衡現象(例如當然總會在電漿處理中存在的電漿)會使得以理論預估任何實際的電漿處理設備之熱傳現象非常困難(若非無法辦到)。
電漿處理設備中的基板溫度分布受到許多因素影響，例如電漿密度分布、RF功率分布、以及夾頭中各種加熱或冷卻元件的詳細結構，因而基板溫度分布通常並不均勻，且難以用少量的加熱或冷卻元件來控制。此缺陷轉化成整個基板上的處理速率不均勻，以及基板上元件晶粒的臨界尺寸不均勻。
鑒於溫度控制的複雜本質，在基板支撐組件中併入數個獨立控制的加熱區將會頗有助益，其能使設備主動產生並維持期望的空間與時間溫度分布，並能彌補其他會對CD均勻度造成不良影響的因素。
此處所論為具備數個獨立控制加熱區之加熱板，其用於半導體處理設備中的基板支撐組件上。此加熱板包含加熱區以及供電與電力回流線路之可縮放的多工布局設計。藉由調整加熱區的功率，就能以放射狀與方位角兩種形式來塑造處理期間的溫度分布。雖然此加熱板主要是針對電漿處理設備而描述，但此加熱板亦可用於其他不使用電漿的半導體處理設備。
亦描述用以製造此加熱板、包含此類加熱板的基板支撐組件之方法，以及用以供電並控制包含此類加熱板的基板支撐組件之方法。
最好能把加熱板中的加熱區佈置成明確的圖形，例如矩形網格、六角形網格、環形陣列、同心圓或任何期望的圖形。各加熱區可為任何適合的尺寸並可具備一個以上的加熱元件。加熱區中的所有加熱元件係一起開啟或關閉。為了讓電連接點數量最少，供電與電力回流線路係佈置如下：各供電線路連接至不同的加熱區群組，且各電力回流線路連接至不同的加熱區群組，其中各加熱區係屬於連接至一特定供電線路的群組之一以及連接至一特定電力回流線路的群組之一。任二個加熱區皆不會連接至相同的供電與電力回流線路對。因此，就能藉由指引電流通過一特定加熱區所連接的供電與電力回流線路對來啟動該加熱區。加熱元件的功率最好小於20 W(5至10 W更佳)。加熱元件可為電阻式加熱器，例如聚醯亞胺加熱器、矽膠加熱器、雲母加熱器、金屬加熱器(如W、Ni/Cr合金、Mo或Ta)、陶瓷加熱器(如WC)、半導體加熱器或碳加熱器。加熱元件可為網板印刷式、繞線式或蝕刻式金屬薄片加熱器。在一實施例中，各加熱區相應基板上的元件晶粒，係為不大於四個製造在半導體基板上的元件晶粒，或是不大於二個製造在半導體基板上的元件晶粒、或是不大於一個製造在半導體基板上的元件晶粒、或是介於2和3 cm2 之間的面積。加熱元件的厚度範圍可從2微米至1毫米，以5-80微米最佳。為了在多個加熱區以及/或是供電與電力回流線路之間留有空間，加熱區的總面積最高可為基板支撐組件的上表面面積的90%，如50%-90%的面積。可把供電線路或電力回流線路(總稱為電線)配置在範圍從1至10 mm之加熱區間的間隙中，或在以電氣絕緣層和加熱區平面隔開的獨立平面上。為了承載大量電流並減少焦耳熱，只要空間上允許，最好使供電與電力回流線路儘可能地寬。在電線和加熱區處於相同平面的一實施例中，電線的寬度最好介於0.3 mm與2 mm之間。在電線和加熱區處於不同平面的另一實施例中，電線的寬度可和加熱區一樣大，例如針對一個300 mm的夾頭，此寬度可為1至2英吋。供電與電力回流線路的材料可和加熱元件的材料相同或不同。供電與電力回流線路的材料最好為低電阻係數材料，如Cu,Al,W,Inconel或Mo。
圖1-2呈現包含加熱板實施例之基板支撐組件，該加熱板具有併在二個電氣絕緣層104A與104B中的加熱區101陣列。電氣絕緣層可為高分子材料、無機材料、陶瓷(如氧化矽、氧化鋁、氧化釔、氮化鋁)或其他適合的材料。基板支撐組件更包含(a)具有陶瓷層103(靜電夾箝層)的ESC，在陶瓷層103中嵌入電極102(如單極或雙極)，以採DC電壓透過靜電將基板夾在陶瓷層103的表面上；(b)熱阻層107；(c)內含通道106(供冷卻劑流動)的冷卻板105。
如圖2所示，各個加熱區101和供電線路201之一者連接，並和電力回流線路202之一者連接。任何二個加熱區101皆不會共用相同的供電201與電力回流202線路對。藉由適合的電氣切換設備，就能連接供電201與電力回流202線路對至電源(未呈現)，僅有連接至此線路對的加熱區會藉以開啟。各加熱區的均時加熱功率可藉由時域多工(time-domain multiplexing)來個別調整。為了預防在不同的加熱區之間發生串音(crosstalk)，可串聯一整流器250(如二極體)於各加熱區與和連接至其的供電線路之間(如圖2所示)、或是於各加熱區和連接至其的電力回流線路之間(未呈現)。整流器可實際位在加熱板中或任何適合的位置。或者，可使用任何電流阻隔設備(如固態切換器)來預防串音發生。
圖3A、3B與3C呈現包含ESC、冷卻板、以及加熱板一實施例之基板支撐組件，其中加熱區101與供電線路201係佈置在第一平面302中，而電力回流線路202係佈置在藉由電氣絕緣層304和第一平面302隔開的第二平面303中。電力回流線路202透過延伸於第一平面302與第二平面303之間的電氣絕緣層304中的導電孔301和加熱區101連接。
使用上，供電線路201與電力回流線路202係經由冷卻板中的孔洞或導管連接至加熱板外的電路系統。應知冷卻板中存在的孔洞或導管會負面影響基板支撐組件的溫度均勻度，因而減少冷卻板中的孔洞或導管數量能提高溫度均勻度。除此之外，少量的孔洞才能使其沿著基板支撐組件的邊緣放置。舉例而言，冷卻板中的單一供電導管可用以供應電氣導線給供電線路201。在一實施例中(圖4A與圖4B)，加熱區101與供電線路201係佈置在第一平面402中。供電線路201透過延伸於第一平面402與第二平面403之間的導電孔301連接到第二平面403中的導線404。第二平面403以電氣絕緣層(未呈現)和第一平面402隔開。電力回流線路202係佈置在第二平面403中，並透過延伸於第一平面402與第二平面403之間的導電孔301連接到加熱區101。在第二平面403中，在維持導線404之間絕緣的情況下將導線404從冷卻板中的孔洞或導管401牽過。相似地，電力回流線路202連接至導線405，且是在維持導線405之間絕緣的情況下將導線405從冷卻板中的孔洞或導管406牽過。
圖5A、5B、5C與5D呈現包含另一加熱板實施例之基板支撐組件，其中加熱區101係佈置在第一平面501中；供電線路201係佈置在第二平面502中；以及電力回流線路202係佈置在第三平面503中。第一平面501、第二平面502、與第三平面503是藉由電氣絕緣層504與304而彼此隔開。供電線路201與電力回流線路202透過延伸於平面501、502與503之間的電氣絕緣層304與504中的導電孔301而連接到加熱區101。連接到供電線路201的導線(未呈現)繞經層504中的孔洞或導管505。當知在穿孔與導管配置合宜的前提下，可以垂直方向的任何順序來佈置平面501、502與503。加熱器最好配置成離基板支撐組件的上表面最近。圖5E呈現一實施例，其中各加熱區101透過整流器506(如二極體)連接到電力回流線路202。整流器506僅允許電流從供電線路201穿過加熱區101流至電力回流線路202，因而預防在加熱區之間發生串音。
基板支撐組件能包含一額外的電氣絕緣層604，其中併有一個以上的額外加熱器(此後稱為主要加熱器601)(請看圖6)。主要加熱器601最好為個別控制的高功率加熱器。主要加熱器的功率介於100與10000 W之間，最好是介於1000與5000 W之間。主要加熱器可配置成矩形網格、同心環形區、放射狀區或環形區與放射狀區之組合。主要加熱器可用以在基板上改變平均溫度、調整放射狀溫度分布、或逐步的溫度控制。主要加熱器可位在加熱板的加熱區之上或之下。
在一實施例中，加熱板的絕緣層中至少一者為高分子材料薄片。
在另一實施例中，加熱板的絕緣層中之至少一者為無機材料(如陶瓷或氧化矽)薄片。用以製造陶瓷夾頭的適合絕緣與導電材料實例係揭露在共同受讓的美國專利案第6483690號，該案內容併入本申請案以供參考。
基板支撐組件可包含加熱板實施例，其中加熱板的各加熱區尺寸相似或小於基板上的單一元件晶粒或元件晶粒群組，以致基板溫度以及由此而來的電漿蝕刻製程能針對各元件晶粒位置來控制，以從該基板得到最大的元件良率。加熱板的可縮放結構能以最少量的供電線路、電力回流線路、與冷卻板中的供給孔，輕易容納逐個晶粒的基板溫度控制(通常在300 mm直徑的基板上會有超過100個的晶粒)所需的加熱區數量，因而減少基板溫度的擾動、製造成本與基板支持組件的複雜度。雖然並未呈現，基板支撐組件可包含如下所列的特徵：抬升基板用的抬升栓、氦氣背冷裝置、提供溫度回授信號的溫度感測器、提供加熱功率回授信號的電壓與電流感測器、加熱器以及/或是夾箝電極的供電裝置、以及/或是RF濾波器。
在製造加熱板的一方法實施例中(其中絕緣層為陶瓷)，可使用如電漿噴塗(plasma spraying)、化學氣相沉積或濺鍍等方法來將陶瓷材料沉積在適合的基板上以形成絕緣層。此層可為初始層或加熱板的絕緣層之一層。
在製造加熱板的一方法實施例中(其中絕緣層為陶瓷)，可將陶瓷粉末、黏結劑、與液體混合物加壓成為薄片並乾燥此薄片(此後稱為生胚薄片(green sheet))以形成絕緣層。生胚薄片可為約0.3 mm厚。可在生胚薄片中打出孔洞以在生胚薄片中形成穿孔。這些孔洞填滿了導電粉末漿料。加熱元件、供電與電力回流線路可由下列方法形成：網板印刷導電粉末漿料(如W、WC、摻SiC或MoSi2 )、加壓預切金屬薄片、噴塗導電粉末漿料、或其他適合的方法。可在生胚薄片的形成製程期間加壓出容納任何整流器(如二極體)的凹槽，或在形成製程之後於生胚薄片中切出這些凹槽。可在這些凹槽中安裝個別元件的整流器。接著會對齊、加壓並燒結具備各式元件(電線、穿孔、整流器與加熱元件)的數個生胚薄片以形成整個加熱板。
在製造加熱板的另一方法實施例中(其中絕緣層為陶瓷)，可藉由將陶瓷粉末、黏結劑與液體的混合物加壓成生胚薄片並乾燥此生胚薄片以形成絕緣層。生胚薄片可為約0.3 mm厚。在生胚薄片中打出孔洞以容納穿孔。可在生胚薄片的形成製程期間加壓出容納任何整流器(如二極體)的凹槽，或在形成製程之後於生胚薄片中切出這些凹槽。接著就會燒結個別的生胚薄片。在燒結薄片中用以容納穿孔的孔洞會填滿導電粉末漿料。可網板印刷導電粉末漿料(如W、WC、摻SiC或MoSi2 )或使用任何其他適合的方法在燒結薄片上形成加熱元件、供電與電力回流線路。可在燒結薄片的凹槽中安裝個別元件的整流器。接著會對齊並透過黏著劑接合具備各式元件(線路、穿孔、整流器與加熱元件)的數個燒結薄片以形成整個加熱板。
在絕緣層為氧化矽薄片的一實施例中，可使用如蒸鍍、濺鍍、PVD、CVD、PECVD的方法將氧化矽薄膜沉積在適合的基板上以形成絕緣層。
在製造加熱板的一較佳方法實施例中，如Al、Inconel或Cu薄片的金屬薄片(元件層)係接合(如熱壓合、用黏著劑黏合)至如聚醯亞胺的第一高分子薄膜上。在元件層的表面上塗覆圖形化的抗蝕膜，其中該圖形定義電子元件(如加熱元件、供電與電力回流線路)的形狀與位置。暴露的金屬受到化學蝕刻而抗蝕圖形則留存在剩餘的金屬薄片中。接著藉由在適合的溶劑中溶解或乾式剝離來移除抗蝕層。用以容納穿孔而具孔洞的第二高分子薄膜(穿孔層)和第一高分子薄膜對齊並接合。可藉由在其中電鍍金屬來塗覆孔洞的側壁。可把任何適合數量的元件層與穿孔層接續合併。最後，為了電氣絕緣而用連續高分子薄膜來覆蓋暴露的金屬元件。
在另一實施例中，加熱元件、供電與電力回流線路是由沉積(如電漿噴塗、電鍍、化學氣相沉積、或濺鍍)在絕緣層或基板上(如生胚薄片)的金屬薄膜構成。
在另一實施例中，加熱元件、供電與電力回流線路是由沉積(如電鍍、化學氣相沉積、或濺鍍)在絕緣層或基板上(如生胚薄片)的一層非晶導電無機薄膜(如氧化銦錫)構成。
在又另一實施例中，加熱元件、供電與電力回流線路是由沉積(如化學氣相沉積、或濺鍍)在絕緣層或基板上(如生胚薄片)的一層導電陶瓷薄膜構成。
在一實施例中，加熱板中的供電與電力回流線路可由端點連接器連接至外部電路系統，如嵌入至冷卻板中但與之電氣絕緣的頂端彈簧式連接器(spring tipped passthroughs)。
在另一實施例中，加熱板中的供電與電力回流線路可藉由下列方式連接至外部電路系統：把導線附著(焊接、用導電黏著劑接合或點焊)在供電與電力回流線路上，並將這些導線穿過冷卻板中的孔洞或導管。
在一電漿處理系統中，用在電漿處理系統腔室中的RF功率通常高於100 W，有時會高於1000 W。RF電壓的幅度可超過千伏。在無適當的過濾或絕緣下，如此龐大的RF功率可輕易影響加熱區的控制與供電電路之運作。可使用RF濾波器來讓RF功率從控制與供電電路中分流。RF濾波器可為簡單寬頻濾波器或針對電漿處理系統所使用的特定RF頻率之調式濾波器。相對地，RF隔離器消除任一RF耦合元件和控制與供電電路之間的直接電連接。RF隔離器可為光耦合器或變壓器。
作為電漿處理系統如何運作的綜觀，圖7A呈現包含腔室713的電漿處理腔室之示意圖，其中配置上部噴頭電極(showerhead electrode)703與基板支撐組件704。基板712穿過載入埠711載入至基板支撐組件704上。氣體線路709供應製程氣體給傳送製程氣體進入腔室的上部噴頭電極703。氣體源708(如供應適合的氣體混合物之質量流量控制器)連接至氣體線路709。RF電源702連接至上部噴頭電極703。操作上，藉由真空泵710排空腔室，並且RF電力在上部噴頭電極703與基板支撐組件704中的下部電極之間電容耦合，以在基板712與上部噴頭電極703之間的空間中將製程氣體激發為電漿。可用電漿來蝕刻元件晶粒特徵至基板712的層中。基板支撐組件704可具併於其中的加熱器。應知雖然電漿處理腔室的細部設計可能不同，但仍可經由基板支撐組件704耦合RF電力。
圖7B呈現RF過濾或隔離的一實施例示意圖，其中在加熱區的供電與電力回流線路上並未連接濾波器或隔離器，而控制與供電電路705連接至和接地端701連接的濾波器或隔離器706B。由於主要加熱器的高功率，所以若在基板支撐組件中存在主要加熱器(未呈現)，其最好能具備獨立的濾波器或隔離器。在此方法中，控制與供電電路705在RF電位上或「高側」上浮動。此方法允許數個加熱區共享單一濾波器或隔離器。
所有高側電路系統皆可容納在緊接於基板支撐組件基底結構之下的局部浮動法拉第籠的內側。
或者，可用隔離變壓器作為單一濾波器或隔離器706B，以使供電與控制電路705和RF隔離。因為變壓器強烈地消弱DC與低頻傳輸，所以加熱區的控制與供電電路705應當要能在相當高的頻率下(25至250 KHz)下運作。控制與供電電路係參照至單一浮動電位(浮動接地)。這需要連接至此隔離變壓器的控制與供電電路必須處在非常相似的RF暴露下。若二群控制與供電電路之間的RF電位相差非常多，顯著的RF電流就會在這些群組間流動。在此情境中，各群組就必須具有各自的濾波器或隔離器，亦或在這些群組之間必須要有濾波器或隔離器。
濾波器或隔離器706B可實際位在電漿處理腔室中或其他任何適合的位置上。
圖8中繪有加熱器控制電子元件的一實施例。低側控制器809可為微控制器單元(MCU,microcontroller unit)或為較高階設備如電腦(PC)。透過光耦合器807，低側控制器和高側MCU 805數位通訊，而後者和加熱區801、感測器803、以及任何輔助電路802互動。若高側MCU 805具有足夠容量與局部記憶體，就可在各運作前預先載入任一設定點與程式至高側MCU 805中，因而就不需和低側控制器809有即時連結。804代表模組之間的單向通訊連結。806代表模組之間的雙向通訊連結。
在時域多工系統的一實施例中，高側MCU依序供電給各個加熱區供電線路。同一時間僅有一個供電線路連接至電源。在供電給一個供電線路的期間，高側MCU可在這期間的一部分時間中維持任何或所有電力回流線路連接至浮動參考端。在以下狀況時會開啟加熱區：連接至該加熱區的供電線路中至少有一個和電源連接，且連接至該加熱區的電力回流線路中至少有一個連接至浮動參考端。加熱區的平均功率和開啟加熱器的平均期間直接成比例。或是，在供電給一個供電線路的期間，高側MCU可在這整個期間中維持任何或所有電力回流線路連接至浮動參考端，並調節會傳送至各個開啟的加熱區之功率。
以具10乘10網格的加熱區為例，在第N列的加熱區連接至第N號供電線路；在第M行的加熱區連接至第M號電力回流線路。高側MCU可採用各供電線路依序和電源連接100 ms的方式來控制加熱。舉例而言，在第3號供電線路連接至電源的100 ms期間，可在這100 ms期間如特定加熱需求所指示般，操作MCU以分別連接第7、8、與9號電力回流線路至浮動參考端達10、50、與100 ms。因此，在第3列與第7行的加熱區就具有1%的工作週期；在第3列與第8行的加熱區就具有5%的工作週期；在第3列與第9行的加熱區就具有10%的工作週期。在此特定實例中，會設定各加熱區的最大尖峰功率為期望平均最大功率的十倍。
為了預防可察覺的溫度調變，切換頻率與整個多工系統最好要快到使各加熱區頻繁(至少1 Hz)獲得指派。藉由使用來自一個以上的溫度感測器之回授資料來實行額外的迴圈控制。若想要亦可使用電壓與電流感測器。可裝置這些感測器以測量參數，例如基板上不同位置的溫度與加熱區的功率。為了使測量參數與其設定目標值之間的差異最小，這些測量參數會送至控制與供電電路以和這些參數的設定目標值作比較，以致控制與供電電路可依此調整傳送至加熱區的功率。
雖然已參照特定實施例詳細描述加熱板、製造此加熱板的方法、包含此加熱板的基板支撐組件、以及使用含有此基板支撐組件的電漿處理腔室的方法，但是熟習本技術者當可明白在未偏離隨附申請專利範圍的範疇下，仍可進行各式變更與修改，並可使用均等者。舉例而言，基板支撐組件可包括用以監控基板溫度的溫度感測器、以期望箝位電壓供電給ESC的供電設備、用以升起與降下基板的升降栓設備、用以供應如氦氣的氣體至基板底側的熱量傳遞氣體供應設備、供應熱量傳遞液體至冷卻板的溫度受控液體供應設備、用以分別供電給在平面加熱區之上或之下的主要加熱器之供電設備、以一個以上的頻率供應RF電力給併於基板支撐組件中的下部電極之供電設備等等。
101．．．加熱區
102．．．電極
103．．．陶瓷層
104A．．．電氣絕緣層
104B．．．電氣絕緣層
105．．．冷卻板
106．．．通道
107．．．熱阻層
201．．．供電線路
202．．．電力回流線路
250．．．整流器
301．．．導電孔
302．．．第一平面
303．．．第二平面
304．．．電氣絕緣層
401．．．孔洞或導管
402．．．第一平面
403．．．第二平面
404．．．導線
405．．．導線
406．．．孔洞或導管
501．．．第一平面
502．．．第二平面
503．．．第三平面
504．．．電氣絕緣層
505．．．孔洞或導管
601．．．主要加熱器
604．．．電氣絕緣層
701．．．接地端
702．．．RF電源
703．．．上部噴頭電極
704．．．基板支撐組件
705．．．控制與供電電路
706B．．．濾波器或隔離器
708．．．氣體源
709．．．氣體線路
710．．．真空泵
711．．．載入埠
712．．．基板
713．．．腔室
801．．．加熱區
802．．．輔助電路
803．．．感測器
804．．．單向通訊連結
805．．．高側微控制器單元(MCU)
806．．．雙向通訊連結
807．．．光耦合器
809．．．低側控制器
圖1為基板支撐組件的橫剖面示意圖，其中併有具加熱區陣列的加熱板，且該基板支撐組件亦包含靜電夾頭(ESC)。
圖2描繪一加熱板實施例中加熱區陣列和供電與電力回流線路之間的拓撲關係，該加熱板可併於基板支撐組件中。
圖3A呈現供電線路與加熱區在相同平面的一實施例。
圖3B呈現電力回流線路位在以電氣絕緣層和圖3A中的平面隔開之平面上，且電力回流線路透過延伸穿過電氣絕緣層的穿孔和加熱區連接。
圖3C呈現基板支撐組件的橫剖面示意圖，該基板支撐組件併有圖3A與3B的加熱板。
圖4A呈現供電線路與加熱區在相同平面的一實施例。
圖4B呈現以電氣絕緣層和圖4A中的平面隔開之一平面，其中該供電線路透過穿孔和此平面中的導線連接，並被牽線至冷卻板(未呈現)中的單一孔洞。在此平面中的電力回流線路透過延伸於此平面與圖4A平面之間的穿孔和加熱區連接。電力回流線路亦被牽線至冷卻板(未呈現)中的單一孔洞。
圖5A呈現加熱區位在無供電線路與電力回流線路的平面上之一實施例。該加熱區透過穿孔連接至在一個以上不同平面的供電線路與電力回流線路。
圖5B呈現供電線路在以電氣絕緣層和圖5A中的平面隔開之第二平面上。供電線路透過延伸於圖5A與5B中的二個平面之間的穿孔和加熱區連接。
圖5C呈現電力回流線路在以另一電氣絕緣層和圖5A與5B中的平面隔開之第三平面上。電力回流線路透過延伸於圖5A-C中的所有三個平面之間的穿孔和加熱區連接。連接至圖5B中供電線路的導線亦在此平面中繞經供應孔。
圖5D為基板支撐組件的橫剖面示意圖，該基板支撐組件併有圖5A-C的加熱板。
圖5E為基板支撐組件的橫剖面示意圖，該基板支撐組件併有圖5A-C的另一加熱板。
圖6為併入加熱板的基板支撐組件之橫剖面示意圖，該基板支撐組件更包括加熱區陣列之上的主要加熱器層，該主要加熱器位在以電氣絕緣層和加熱板中所有平面隔開的額外平面上。
圖7A為示範性電漿處理腔室的示意圖，其可包括具備本文所述的加熱板之基板支撐組件。
圖7B為RF隔離方法的示意圖。
圖8呈現在基板支撐組件的控制電子元件實施例中之信號流的方塊圖。
101‧‧‧加熱區
201‧‧‧供電線路
202‧‧‧電力回流線路
250‧‧‧整流器
301‧‧‧導電孔

Claims (55)

  1. 一種基板支撐組件，用以在一半導體處理設備中支撐一半導體基板，該基板支撐組件包含：一靜電夾頭(ESC)，其包括至少具備一夾箝電極的一靜電夾箝層，用以透過靜電將一半導體基板夾在該基板支撐組件上；一加熱板，其係佈置在該靜電夾箝層之下；一冷卻板，其藉由一熱阻層附接至該加熱板的下側；該加熱板包含：第一電氣絕緣層；平面加熱區，至少包含第一、第二、第三、與第四平面加熱區，其各自包含一個以上加熱元件，該平面加熱區橫向分布在該第一電氣絕緣層各處且可操作來調整該基板上的空間溫度分布；供電線路，其至少包含電連接至該第一與第二平面加熱區的第一導電供電線路，與電連接至該第三與第四平面加熱區的第二導電供電線路；電力回流線路，其至少包含電連接至該第一與第三平面加熱區的第一導電電力回流線路，與電連接至該第二與第四平面加熱區的第二導電電力回流線路；且其中(a)該供電線路連接至彼此電氣絕緣並延伸穿過該冷卻板中至少一個供電導管之導線，且該電力回流線路連接至彼此電氣絕緣並延伸穿過該冷卻板中至少一個電力回流導管之導線；或是(b)該供電線路與該電力回流線路連接至嵌在該冷卻板中的端點連接器。
  2. 如申請專利範圍第1項所述之基板支撐組件，其中(a)該平面加熱區與該供電線路位在第一平面中；該電力回流線路位在和該第一平面平行的第二平面中；該第一與第二平面以該第一電氣絕緣層彼此隔開；該電力回流線路藉由垂直延伸於該第一電氣絕緣層中的穿孔和該平面加熱區電連接； (b)該平面加熱區與該電力回流線路位在第一平面中；該供電線路位在和該第一平面平行的第二平面中；該第一與第二平面以該第一電氣絕緣層彼此隔開；該供電線路藉由垂直延伸於該第一電氣絕緣層中的穿孔和該平面加熱區電連接；或是(c)該平面加熱區位在第一平面中；該供電線路位在和該第一平面平行的第二平面中；該電力回流線路位在和該第一平面平行的第三平面中；該第一與第二平面以該第一電氣絕緣層隔開；該第二與第三平面以第二電氣絕緣層隔開；該供電線路與該電力回流線路藉由延伸穿過該電氣絕緣層中的穿孔和該平面加熱區電連接。
  3. 如申請專利範圍第1項所述之基板支撐組件，其中該平面加熱區的尺寸被製作為：(a)各平面加熱區不大於四個製造在該半導體基板上的元件晶粒，或是(b)各平面加熱區不大於二個製造在該半導體基板上的元件晶粒，或是(c)各平面加熱區不大於一個製造在該半導體基板上的元件晶粒，或是(d)各平面加熱區的面積介於2與3平方公分之間，或是(e)該加熱板包括100至400個平面加熱區，或是(f)各平面加熱區為1至15cm2 ，或是(g)各平面加熱區為16至100cm2 ，或是(h)各平面加熱區係依在該半導體基板上的元件晶粒尺寸與該半導體基板的整體尺寸而縮放。
  4. 如申請專利範圍第1項所述之基板支撐組件，其中該第一電氣絕緣層包含一高分子材料、一陶瓷材料、或前二者之組合。
  5. 如申請專利範圍第1項所述之基板支撐組件，其中該供電線路 與該電力回流線路的總數等於或小於該平面加熱區的總數。
  6. 如申請專利範圍第1項所述之基板支撐組件，其中該平面加熱區的總面積為該加熱板的一上表面之50%至90%。
  7. 如申請專利範圍第1項所述之基板支撐組件，其中該平面加熱區係佈置成矩形網格、六角形網格或同心圓；且該平面加熱區以至少1毫米寬而最多10毫米寬的間隙彼此隔開。
  8. 如申請專利範圍第1項所述之基板支撐組件，其中一整流器係串聯在各加熱區與連接至其的該供電線路之間，或是一整流器係串聯在各加熱區與連接至其的該電力回流線路之間。
  9. 如申請專利範圍第8項所述之基板支撐組件，其中該整流器為一半導體二極體。
  10. 如申請專利範圍第1項所述之基板支撐組件，更包含一控制與供電電路，其可在任何規定時間操作以選擇性供電給(a)僅該第一平面加熱區、(b)僅該第二平面加熱區、(c)僅該第三平面加熱區、(d)僅該第四平面加熱區、(e)僅該第一與第二平面加熱區、(f)僅該第一與第三平面加熱區、(g)僅該第二與第四平面加熱區、(h)僅該第三與第四平面加熱區、或(i)所有平面加熱區。
  11. 如申請專利範圍第10項所述之基板支撐組件，更包含至少一濾波器或隔離器，其在該控制與供電電路以及電接地端之間串聯。
  12. 如申請專利範圍第11項所述之基板支撐組件，其中該至少一濾波器或隔離器為一變壓器。
  13. 如申請專利範圍第1項所述之基板支撐組件，更包含至少一主 要加熱器層，其佈置在該加熱板的該第一電氣絕緣層之上或之下，其中該主要加熱器層和該加熱板的該平面加熱區、該供電線路、與該電力回流線路電氣絕緣；該主要加熱器層包括至少一加熱器，其提供該半導體基板平均的溫度控制；該平面加熱區在處理期間提供該半導體基板放射狀與方位角形式的溫度分布控制。
  14. 如申請專利範圍第1項所述之基板支撐組件，其中該端點連接器為頂端彈簧式連接器。
  15. 如申請專利範圍第13項所述之基板支撐組件，其中該主要加熱器層包括二個以上的加熱器。
  16. 一種製造如申請專利範圍第1項之加熱板的方法，包含：(a)在陶瓷薄片中形成孔洞；(b)在該陶瓷薄片中網板印刷一導電粉末漿料、或加壓一預切金屬薄片、或噴塗一導電粉末漿料，用以形成該平面加熱區、該供電線路、與該電力回流線路；(c)用一導電粉末漿料填滿該陶瓷薄片中的該孔洞以形成供電與電力回流穿孔；(d)對齊、加壓與接合該陶瓷薄片以形成該加熱板。
  17. 如申請專利範圍第16項所述之製造如申請專利範圍第1項之加熱板的方法，其中：(a)在第一陶瓷薄片的上側形成該平面加熱區與供電線路，在該第一陶瓷薄片的下側形成該電力回流線路，在該第一陶瓷薄片的上表面之上放置第二陶瓷薄片，且在該第一陶瓷薄片之下放置第三陶瓷薄片，以及將該第一、第二與第三陶瓷薄片一起加壓並燒結以形成無接縫加熱板；或是(b)在第一陶瓷薄片的上側形成該平面加熱區，在置於該第一陶瓷薄片之下的第二陶瓷薄片的上側形成該供電線路，在置於 該第二陶瓷薄片之下的第三陶瓷薄片的上側形成該電力回流線路，在該第一陶瓷薄片的上表面之上放置第四陶瓷薄片，以及將該第一、第二、第三與第四陶瓷薄片一起加壓並燒結以形成無接縫加熱板。
  18. 一種製造如申請專利範圍第1項之加熱板的方法，包含：製造一元件層，包括下列步驟：(a)把一金屬薄片接合至一高分子膜上；(b)把一圖形化抗蝕膜塗覆在該金屬薄片上，其中在該圖形化抗蝕膜的開放區對應到將遭移除的金屬之位置；(c)蝕刻該金屬薄片以移除透過該抗蝕膜的開放區而暴露的金屬，該蝕刻形成該平面加熱區、供電線路以及/或是電力回流線路的導電金屬圖形；(d)移除該抗蝕膜；製造一穿孔層，包括下列步驟：(a)在一高分子膜中打出或切出孔洞；(b)在該孔洞中形成導電穿孔；藉由把一個以上的元件層和一個以上的穿孔層接合來建構薄板；藉由把一連續高分子膜接合至該薄板的上表面以及/或是下表面來使該薄板絕緣。
  19. 一種製造如申請專利範圍第1項之加熱板的方法，包含：在該第一絕緣層上沉積金屬、非晶導電無機材料、或導電陶瓷以形成該平面加熱區、供電線路以及/或是電力回流線路。
  20. 一種在一電漿處理腔室中以電漿處理半導體基板的方法，該電漿處理腔室包含如申請專利範圍第1項之基板支撐組件，該方法包含：(a)把一半導體基板載入至該處理腔室中，並將該半導體基 板定位在該基板支撐組件上；(b)針對會影響臨界尺寸(CD)均勻度的處理情況，判定會抵銷該處理情況的一溫度分布；(c)使用該基板支撐組件來加熱該半導體基板以符合該溫度分布；(d)激發電漿並處理該半導體基板，同時藉由獨立控制該平面加熱區加熱來控制該溫度分布；(e)從該處理腔室卸下該半導體基板，並針對不同的半導體基板重複步驟(a)-(e)。
  21. 一種對基板支撐組件中之加熱器供電的方法，一半導體基板係支撐於該基板支撐組件上，該基板支撐組件包含：一系列之加熱器，由二或更多供電線路及二或更多電力回流線路所供電，其中各供電線路係連接至一電源及該等加熱器之至少二者，且各電力回流線路係連接至該等加熱器之至少二者；及切換裝置，獨立地將該等加熱器之每一者連接至該供電線路之其中一者及該電力回流線路之其中一者，以藉由該切換設備之切換器的分時多工(time-divisional multiplexing)提供均時(time-averaged)功率至該等加熱器之每一者，該方法包含：使用一時域多工(time-domain multiplexing)系統依序供應功率至該等加熱器之每一者。
  22. 如申請專利範圍第21項所述之對基板支撐組件中之加熱器供電的方法，其中同一時間僅有一供電線路連接至一電源。
  23. 如申請專利範圍第21項所述之對基板支撐組件中之加熱器供電的方法，其中該等加熱器之每一者的平均功率係與開啟加熱器的平均期間直接成比例。
  24. 如申請專利範圍第21項所述之對基板支撐組件中之加熱器供 電的方法，其中該等加熱器係於一網格中，該網格具有：在第N列的加熱器連接至第N號供電線路、及在第M行的加熱器連接至第M號電力回流線路。
  25. 如申請專利範圍第21項所述之對基板支撐組件中之加熱器供電的方法，其中該供電線路之每一者係依序連接至一電源。
  26. 如申請專利範圍第21項所述之對基板支撐組件中之加熱器供電的方法，其中各加熱器係於至少1Hz之頻率下獲得指派。
  27. 如申請專利範圍第21項所述之對基板支撐組件中之加熱器供電的方法，其中感測器測量被送至調整傳送至該等加熱器之功率的一控制及供電電路之參數，以使受測量之該等參數與設定目標之間的差異最小。
  28. 如申請專利範圍第21項所述之對基板支撐組件中之加熱器供電的方法，其中該等加熱器的尺寸被製作為：(a)各加熱器不大於四個製造在該半導體基板上的元件晶粒，或是(b)各加熱器不大於二個製造在該半導體基板上的元件晶粒，或是(c)各加熱器不大於一個製造在該半導體基板上的元件晶粒，或是(d)各加熱器的面積介於2與3平方公分之間，或是(e)該系列之加熱器包括100至400個平面加熱器，或是(f)各加熱器加熱1至15cm2 之平面加熱區，或是(g)各加熱器加熱16至100cm2 之平面加熱區，或是(h)各加熱器係依在該半導體基板上的元件晶粒尺寸與該半導體基板的整體尺寸而縮放。
  29. 如申請專利範圍第21項所述之對基板支撐組件中之加熱器供電的方法，其中該供電線路與該電力回流線路的總數等於或小於該等加熱器的總數。
  30. 如申請專利範圍第21項所述之對基板支撐組件中之加熱器供電的方法，其中該等加熱器係佈置成矩形網格、六角形網格或同心圓；且該等加熱器以至少1毫米寬而最多10毫米寬的間隙彼此隔開。
  31. 如申請專利範圍第21項所述之對基板支撐組件中之加熱器供電的方法，其中一整流器係串聯在各加熱器與連接至其的該供電線路之間，或是一整流器係串聯在各加熱器與連接至其的該電力回流線路之間。
  32. 如申請專利範圍第21項所述之對基板支撐組件中之加熱器供電的方法，其中一控制及供電電路依序供電給至少16個加熱器。
  33. 如申請專利範圍第21項所述之對基板支撐組件中之加熱器供電的方法，其中至少一主要加熱器層係佈置在支持該等加熱器之一加熱板的一第一電氣絕緣層之上或之下，其中該主要加熱器層和該等加熱器、該供電線路、與該電力回流線路電氣絕緣；該主要加熱器層包括至少一加熱器，其提供該半導體基板平均的溫度控制；該等加熱器在處理期間提供該半導體基板放射狀與方位角形式的溫度分布控制，該方法包含：對該主要加熱器層供電至一預定溫度、及電漿處理該半導體基板。
  34. 如申請專利範圍第21項所述之對基板支撐組件中之加熱器供電的方法，更包含：(a)把一半導體基板載入至一處理腔室中，並將該半導體基 板定位在該基板支撐組件上；(b)針對會影響臨界尺寸(CD)均勻度的處理情況，判定會抵銷該處理情況的一溫度分布；(c)使用該基板支撐組件來加熱該半導體基板以符合該溫度分布；(d)激發電漿並處理該半導體基板，同時藉由獨立控制該等加熱器加熱來控制該溫度分布；(e)從該處理腔室卸下該半導體基板，並針對不同的半導體基板重複步驟(a)-(e)。
  35. 如申請專利範圍第34項所述之對基板支撐組件中之加熱器供電的方法，其中該處理包含電漿蝕刻該半導體基板。
  36. 如申請專利範圍第21項所述之對基板支撐組件中之加熱器供電的方法，其中當一個供電線路被供電時，選擇待起動之回流線路並依序將該等選定之回流線路的複數者連接至一浮動參考端持續相同或不同期間，以調節供給至連接到該供電線路及該選定之回流線路的加熱器之功率。
  37. 如申請專利範圍第21項所述之對基板支撐組件中之加熱器供電的方法，其中該等加熱器為電阻式加熱器，且供給至該等電阻式加熱器的最大功率為20W。
  38. 如申請專利範圍第21項所述之對基板支撐組件中之加熱器供電的方法，其中各加熱器之均時加熱功率係藉由時域多工來獨立地調整。
  39. 如申請專利範圍第21項所述之對基板支撐組件中之加熱器供電的方法，其中該基板支撐組件包含被供以100至10000W之功率的主要加熱器，該等主要加熱器係位於該系列之加熱器之下。
  40. 一種基板支撐件，用以在一電漿處理腔室中支撐一半導體基板，該基板支撐件包含：一系列之加熱器，可操作來調整該半導體基板上的空間溫度分布，該等加熱器係由二或更多供電線路及二或更多電力回流線路所供電，其中各供電線路係連接至該等加熱器之至少二者，且各電力回流線路係連接至該等加熱器之至少二者；及切換裝置，經由該供電線路之其中一者及該電力回流線路之其中一者獨立地供電至該等加熱器之每一者，以藉由切換器的分時多工提供均時功率至該等加熱器之每一者。
  41. 如申請專利範圍第40項所述之基板支撐件，更包含該系列之加熱器之下的受溫度控制且由RF供電之一底板；及容納於該底板之下的局部法拉第籠中之一高側電路。
  42. 如申請專利範圍第40項所述之基板支撐件，更包含具有一第一電氣絕緣層之一加熱板，佈置於包含至少第一、第二、第三及第四平面加熱區之平面加熱區中的該系列之加熱器各包含一或更多加熱元件，該等平面加熱區橫向分布在該第一電氣絕緣層各處，該供電線路至少包含電連接至該第一及第二平面加熱區的一第一導電供電線路、及電連接至該第三及第四平面加熱區的一第二導電供電線路，且該電力回流線路至少包含電連接至該第一及第三平面加熱區的一第一導電電力回流線路、及電連接至該第二及第四平面加熱區的一第二導電電力回流線路。
  43. 如申請專利範圍第40項所述之基板支撐件，更包含溫度感測器，其測量送至調整傳送至該等加熱器之功率的一控制與供電電路之參數，以使該等測量參數與設定目標值之間的差異最小。
  44. 如申請專利範圍第40項所述之基板支撐件，其中該切換裝置 係連接至一隔離器，該隔離器係連接至接地端。
  45. 如申請專利範圍第44項所述之基板支撐件，其中該切換裝置係位於該電漿處理腔室中。
  46. 如申請專利範圍第44項所述之基板支撐件，其中該隔離器為使該切換裝置隔離於RF的一隔離變壓器。
  47. 如申請專利範圍第40項所述之基板支撐件，更包含至少一主要加熱器層，其佈置在支撐該等加熱器之一加熱板的一第一電氣絕緣層之上或之下，其中該主要加熱器層和該等加熱器、該供電線路、與該電力回流線路電氣絕緣；該主要加熱器層包括至少一主要加熱器，其提供該半導體基板平均的溫度控制；且該系列之加熱器提供該半導體基板放射狀與方位角形式的溫度分布控制。
  48. 如申請專利範圍第46項所述之基板支撐件，其中該切換裝置為一高測控制器，且該基板支撐件更包含一光耦合器，其連接至該高測控制器，用以與一低側控制器數位通訊。
  49. 如申請專利範圍第40項所述之基板支撐件，其中該切換裝置將至少一電力回流線路連接至一浮動參考端。
  50. 如申請專利範圍第40項所述之基板支撐件，其中當連接至一加熱器之至少一供電線路係連接至一電源、且連接至該加熱器之至少一電力回流線路係連接至一浮動參考端時，該切換裝置開啟該加熱器。
  51. 如申請專利範圍第40項所述之基板支撐件，其中該切換裝置將所有電力回流線路連接至一浮動參考端。
  52. 如申請專利範圍第40項所述之基板支撐件，其中該切換裝置在至少1Hz之頻率下指派各加熱器。
  53. 如申請專利範圍第40項所述之基板支撐件，更包含感測器，其係配置成測量該基板支撐件上之不同位置上的參數、及該等加熱器之功率。
  54. 如申請專利範圍第53項所述之基板支撐件，其中該感測器包含電壓及電流感測器之至少一者。
  55. 如申請專利範圍第53項所述之基板支撐件，其中該測量參數至少包含溫度量測值。
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