JP3933174B2 - ヒータユニットおよびそれを備えた装置 - Google Patents
ヒータユニットおよびそれを備えた装置 Download PDFInfo
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- JP3933174B2 JP3933174B2 JP2005242210A JP2005242210A JP3933174B2 JP 3933174 B2 JP3933174 B2 JP 3933174B2 JP 2005242210 A JP2005242210 A JP 2005242210A JP 2005242210 A JP2005242210 A JP 2005242210A JP 3933174 B2 JP3933174 B2 JP 3933174B2
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- Prior art keywords
- heater
- cooling
- temperature
- heater unit
- heater substrate
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- 238000001816 cooling Methods 0.000 claims description 119
- 239000000758 substrate Substances 0.000 claims description 88
- 238000010438 heat treatment Methods 0.000 claims description 43
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 39
- 229910052751 metal Inorganic materials 0.000 claims description 38
- 239000002184 metal Substances 0.000 claims description 38
- 238000004519 manufacturing process Methods 0.000 claims description 28
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 24
- 238000007689 inspection Methods 0.000 claims description 18
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
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- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
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- 239000010937 tungsten Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
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- -1 yttrium compound Chemical class 0.000 description 3
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- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910001252 Pd alloy Inorganic materials 0.000 description 2
- 229910001260 Pt alloy Inorganic materials 0.000 description 2
- 235000021355 Stearic acid Nutrition 0.000 description 2
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- 239000005388 borosilicate glass Substances 0.000 description 2
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 2
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- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 2
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- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
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- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
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- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
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- 150000004767 nitrides Chemical class 0.000 description 1
- QDMHRVCNBNESTO-UHFFFAOYSA-K octadecanoate;yttrium(3+) Chemical compound [Y+3].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O QDMHRVCNBNESTO-UHFFFAOYSA-K 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
- H05B3/265—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an inorganic material, e.g. ceramic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Resistance Heating (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Surface Heating Bodies (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
3 冷却モジュール
4 給電配線
5 温度センサ
7 昇降手段
8 容器
9 支持ロッド
21 発熱体回路
22 ヒータ基体
23 絶縁膜
32 介在物
Claims (12)
- 被加熱物を搭載して加熱処理するためにヒータ基板と、該ヒータ基板を冷却するための冷却モジュールを備えたヒータユニットにおいて、前記冷却モジュールがヒータ基板に当接、分離できるように可動式であって、前記ヒータ基板と冷却モジュールの間に介在物を配置したことを特徴とするヒータユニット。
- 前記介在物の厚みが、0.3mm以上3mm以下であることを特徴とする請求項1に記載のヒータユニット。
- 前記介在物が、発泡金属あるいは金属メッシュであることを特徴とする請求項1または2に記載のヒータユニット。
- 前記介在物が、フッ素樹脂、ポリイミド、シリコン樹脂のいずれかであることを特徴とする請求項1または2に記載のヒータユニット。
- 前記介在物が、ニッケルを基材とした発泡金属であることを特徴とする請求項3に記載のヒータユニット。
- 前記介在物が、冷却モジュールに固定されていることを特徴とする請求項1乃至5のいずれかに記載のヒータユニット。
- 前記介在物に面するヒータ基板の平面度が、300μm以下であることを特徴とする請求項1乃至6のいずれかに記載のヒータユニット。
- 前記介在物に面する冷却モジュールの平面度が、300μm以下であることを特徴とする請求項1乃至6のいずれかに記載のヒータユニット。
- 前記ヒータ基板の主成分が、窒化アルミニウム、炭化ケイ素、酸化アルミニウム、窒化ケイ素、銅、アルミニウム、ニッケル、シリコンからなる群から選ばれた少なくとも1種であることを特徴とする請求項1乃至8のいずれかに記載のヒータユニット。
- 前記冷却モジュールの主成分が、銅、アルミニウム、ニッケル、マグネシウム、チタンからなる群から選ばれた少なくとも1種であることを特徴とする請求項1乃至8のいずれかに記載のヒータユニット。
- 請求項1乃至10のいずれかに記載したヒータユニットを備えたことを特徴とする半導体製造・検査装置。
- 請求項1乃至10のいずれかに記載したヒータユニットを備えたことを特徴とするフラットパネルディスプレイの製造装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005242210A JP3933174B2 (ja) | 2005-08-24 | 2005-08-24 | ヒータユニットおよびそれを備えた装置 |
US11/507,655 US20070062929A1 (en) | 2005-08-24 | 2006-08-22 | Heating unit and the apparatus having the same |
US12/610,769 US20100044364A1 (en) | 2005-08-24 | 2009-11-02 | Heating unit and the apparatus having the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005242210A JP3933174B2 (ja) | 2005-08-24 | 2005-08-24 | ヒータユニットおよびそれを備えた装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007059178A JP2007059178A (ja) | 2007-03-08 |
JP3933174B2 true JP3933174B2 (ja) | 2007-06-20 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005242210A Active JP3933174B2 (ja) | 2005-08-24 | 2005-08-24 | ヒータユニットおよびそれを備えた装置 |
Country Status (2)
Country | Link |
---|---|
US (2) | US20070062929A1 (ja) |
JP (1) | JP3933174B2 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5056228B2 (ja) * | 2007-07-13 | 2012-10-24 | 住友電気工業株式会社 | ヒータユニット及びそれを備えた半導体装置の製造・検査装置 |
KR20090079540A (ko) * | 2008-01-18 | 2009-07-22 | 주식회사 코미코 | 기판 지지 장치 및 이를 갖는 기판 처리 장치 |
US8637794B2 (en) | 2009-10-21 | 2014-01-28 | Lam Research Corporation | Heating plate with planar heating zones for semiconductor processing |
JP5293718B2 (ja) * | 2010-10-01 | 2013-09-18 | 東京エレクトロン株式会社 | 熱処理装置、熱処理方法及び記憶媒体 |
US8791392B2 (en) | 2010-10-22 | 2014-07-29 | Lam Research Corporation | Methods of fault detection for multiplexed heater array |
US8546732B2 (en) * | 2010-11-10 | 2013-10-01 | Lam Research Corporation | Heating plate with planar heater zones for semiconductor processing |
JP5658083B2 (ja) * | 2011-05-11 | 2015-01-21 | 株式会社Screenセミコンダクターソリューションズ | 温度変更システム |
JP6288480B2 (ja) * | 2016-06-22 | 2018-03-07 | 住友電気工業株式会社 | 加熱冷却モジュール |
US20180096867A1 (en) * | 2016-09-30 | 2018-04-05 | Momentive Performance Materials Inc. | Heating apparatus with controlled thermal contact |
US20210035767A1 (en) * | 2019-07-29 | 2021-02-04 | Applied Materials, Inc. | Methods for repairing a recess of a chamber component |
US11035898B1 (en) * | 2020-05-11 | 2021-06-15 | International Test Solutions, Inc. | Device and method for thermal stabilization of probe elements using a heat conducting wafer |
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US5545473A (en) * | 1994-02-14 | 1996-08-13 | W. L. Gore & Associates, Inc. | Thermally conductive interface |
EP0956590A1 (en) * | 1996-04-29 | 1999-11-17 | Parker-Hannifin Corporation | Conformal thermal interface material for electronic components |
JP2005150506A (ja) * | 2003-11-18 | 2005-06-09 | Sumitomo Electric Ind Ltd | 半導体製造装置 |
US7316262B1 (en) * | 2004-01-26 | 2008-01-08 | Rini Technologies, Inc. | Method and apparatus for absorbing thermal energy |
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2005
- 2005-08-24 JP JP2005242210A patent/JP3933174B2/ja active Active
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US20100044364A1 (en) | 2010-02-25 |
US20070062929A1 (en) | 2007-03-22 |
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