JP4479302B2 - ヒータユニット及びそれを搭載した装置 - Google Patents
ヒータユニット及びそれを搭載した装置 Download PDFInfo
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- JP4479302B2 JP4479302B2 JP2004097861A JP2004097861A JP4479302B2 JP 4479302 B2 JP4479302 B2 JP 4479302B2 JP 2004097861 A JP2004097861 A JP 2004097861A JP 2004097861 A JP2004097861 A JP 2004097861A JP 4479302 B2 JP4479302 B2 JP 4479302B2
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- Prior art keywords
- heater
- less
- cooling block
- heater substrate
- cooling
- Prior art date
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- 239000000758 substrate Substances 0.000 claims description 78
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 52
- 238000010438 heat treatment Methods 0.000 claims description 50
- 239000000919 ceramic Substances 0.000 claims description 33
- 239000004065 semiconductor Substances 0.000 claims description 25
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- 238000007689 inspection Methods 0.000 claims description 14
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 7
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
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- 239000012299 nitrogen atmosphere Substances 0.000 description 12
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- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
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- 229910052757 nitrogen Inorganic materials 0.000 description 6
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- -1 yttrium compound Chemical class 0.000 description 3
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 235000021355 Stearic acid Nutrition 0.000 description 2
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- 239000008187 granular material Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- QDMHRVCNBNESTO-UHFFFAOYSA-K octadecanoate;yttrium(3+) Chemical compound [Y+3].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O QDMHRVCNBNESTO-UHFFFAOYSA-K 0.000 description 2
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000008117 stearic acid Substances 0.000 description 2
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
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- 239000012752 auxiliary agent Substances 0.000 description 1
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- 238000003486 chemical etching Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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- 238000005468 ion implantation Methods 0.000 description 1
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- 230000001050 lubricating effect Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
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- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Images
Landscapes
- Surface Heating Bodies (AREA)
- Resistance Heating (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
2 ヒータ基板
3 冷却ブロック
4 ヒータ基板の当接面
5 冷却ブロックの当接面
6 挿入物
7 昇降手段
8 容器
9 支持体
21 セラミックス基体
22 発熱体回路
23 絶縁層
Claims (5)
- 裏面に発熱体回路と該発熱体回路を保護する絶縁膜が形成されており、裏面と反対側の主面に被加熱物を搭載して加熱処理するヒータ基板と、該ヒータ基板の裏面に当接、分離可能な冷却ブロックとを有するヒータユニットにおいて、前記ヒータ基板を構成するセラミックスの主成分が、窒化アルミニウム、炭化珪素、窒化珪素からなる群から選ばれた少なくとも1種類であり、前記絶縁膜の厚みが、15μm以上、500μm以下であり、かつ絶縁膜の厚みの最大値と最小値の差が、200μm以下であり、前記ヒータ基板と冷却ブロックの当接面の面粗さが、共にRaで5μm以下であり、前記ヒータ基板と前記冷却ブロックの当接面の平面度の合計が、0.8mm以下であることを特徴とするヒータユニット。
- 内部に発熱体回路が形成されており、主面に被加熱物を搭載して加熱処理するヒータ基板と、該ヒータ基板の主面と反対側の裏面に当接、分離可能な冷却ブロックとを有するヒータユニットにおいて、前記ヒータ基板を構成するセラミックスの主成分が、窒化アルミニウム、炭化珪素、窒化珪素からなる群から選ばれた少なくとも1種類であり、前記ヒータ基板と冷却ブロックの当接面の面粗さが、共にRaで5μm以下であり、前記ヒータ基板と前記冷却ブロックの当接面の平面度の合計が、0.8mm以下であることを特徴とするヒータユニット。
- 前記セラミックスヒータの主成分が、窒化アルミニウムであることを特徴とする請求項1または2に記載のヒータユニット。
- 請求項1乃至3のいずれかに記載のヒータユニットを搭載したことを特徴とする半導体製造・検査装置。
- 請求項1乃至3のいずれかに記載のヒータユニットを搭載したことを特徴とするフラットパネルディスプレイの製造検査装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004097861A JP4479302B2 (ja) | 2004-03-30 | 2004-03-30 | ヒータユニット及びそれを搭載した装置 |
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JP2004097861A JP4479302B2 (ja) | 2004-03-30 | 2004-03-30 | ヒータユニット及びそれを搭載した装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005286106A JP2005286106A (ja) | 2005-10-13 |
JP4479302B2 true JP4479302B2 (ja) | 2010-06-09 |
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JP2004097861A Expired - Lifetime JP4479302B2 (ja) | 2004-03-30 | 2004-03-30 | ヒータユニット及びそれを搭載した装置 |
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JP (1) | JP4479302B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007115736A (ja) * | 2005-10-18 | 2007-05-10 | Sumitomo Electric Ind Ltd | ウエハ加熱用ホットプレート |
JP5605265B2 (ja) * | 2011-02-24 | 2014-10-15 | 住友電気工業株式会社 | 半導体製造装置用ヒータユニット |
TW201436091A (zh) | 2013-01-30 | 2014-09-16 | Kyocera Corp | 試料保持具及使用其之電漿蝕刻裝置 |
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2004
- 2004-03-30 JP JP2004097861A patent/JP4479302B2/ja not_active Expired - Lifetime
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JP2005286106A (ja) | 2005-10-13 |
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