CN102668058B - 具有用于半导体处理的平坦加热器区域的加热板 - Google Patents

具有用于半导体处理的平坦加热器区域的加热板 Download PDF

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CN102668058B
CN102668058B CN201080051828.XA CN201080051828A CN102668058B CN 102668058 B CN102668058 B CN 102668058B CN 201080051828 A CN201080051828 A CN 201080051828A CN 102668058 B CN102668058 B CN 102668058B
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CN102668058A (zh
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哈米特·辛格
凯特·加夫
尼尔·本杰明
凯特·科门达特
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Lam Research Corp
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Abstract

一种用于在半导体等离子体处理装置中的基板支承组件的加热板，包括设置在可扩展的多重布局结构中的多个独立可控平坦加热器区域，以及独立控制和供电给所述平坦加热器区域的电子设备。结合有所述加热板的基板支承组件包括静电夹持电极和温控基板。用于制造所述加热板的方法包括将具有平坦加热器区域、电源供应线、电源返回线以及导通孔的陶瓷或聚合物片粘结在一起。

Description

具有用于半导体处理的平坦加热器区域的加热板
背景技术
随着每一后继的半导体技术的产生，基板直径趋于增大并且晶体尺寸变小，导致在基板处理中需要更高程度的精度和可重复性。半导体基板材料，例如硅基板，由包括使用真空腔的技术来处理。这些技术包括非等离子体应用，例如电子束沉积，以及等离子体应用，例如溅射沉积、等离子体增强化学气相沉积法（PECVD）、抗蚀条和等离子体蚀刻。
今天可用的等离子体处理系统是那些对改进精度和可重复性的要求日益增强的半导体制造工具。用于等离子体处理系统的一个度规是提高均匀性，其包括在半导体基板表面上的处理结果的均匀性以及通过额定相同输入参数处理的一系列基板的处理结果的均匀性。基板上均匀性的连续提高是可以期望的。除此之外，这还需要具有改进均匀性、一致性和自我诊断的等离子体腔。
发明内容
根据一个实施例，用于使用来支承在半导体等离子体处理装置中的半导体基板的基板支承组件的加热板包括至少第一电绝缘层、包括跨过所述第一电绝缘层横向(laterally)分布的至少第一、第二、第三和第四平坦加热器区域的平坦加热器区域、包括电连接到所述第一和第二加热器区域的至少第一电源供应线和电连接到所述第三和第四加热器区域的至少第二电源供应线的导电电源供应线、包括电连接到所述第一和第三加热器区域的至少第一电源返回线和电连接到所述第二和第四加热器区域的至少第二电源返回线的导电电源返回线。
附图说明
图1为基板支承组件的示意剖视图，其结合了(incorporate)具有加热器区域阵列的加热板，基板支承组件还包括静电夹头（ESC）。
图2图解说明在电源供应线与电源返回线之间的与加热板一个实施例中的加热器区域阵列的拓扑连接，加热板可以结合在基板支承组件中。
图3A表示电源供应线和电源返回线处于相同板上的实施例。
图3B表示通过电绝缘层而与在图3A中的平面分离的平面上的电源返回线，并且电源返回线通过延伸通过电绝缘层的导通孔连接到加热器区域。
图3C为结合了图3A和3B的加热板的基板支承组件的示意剖视图。
图4A表示电源供应线和电源返回线处于相同板上的实施例。
图4B表示通过电绝缘层而与图3A中的平面分离的平面，其中电源供应线通过导通孔连接到在该平面中的导线，并且带到在冷却板（未示出）中的单孔。在该板上的电源返回线通过在该平面与在图4A中的平面之间延伸的导通孔连接到加热器区域。电源返回线也带到在冷却板（未示出）中的单孔。
图5A表示加热器区域位于平面上、而电源供应线或电源返回线不位于该平面上的实施例。加热器区域通过导通孔连接到在一个或多个不同平面上的电源供应线和电源返回线。
图5B表示在通过电绝缘层而与在图5A中的平面分离的第二平面上的电源供应线。电源供应线通过在图5A和5B中的两个平面之间延伸的导通孔连接到加热器区域。
图5C表示在通过另外的电绝缘层与在图5A和5B中的平面分离的第三平面上的电源返回线。电源返回线通过在图5A-C中的所有三个平面之间延伸的导通孔连接到加热器区域。连接到在图5B中的电源供应线的导线也给定出通过在该平面中的馈通孔的线路。
图5D为结合了在图5A-C中的加热板的基板支承组件的示意剖视图。
图5E为结合了在图5A-C中的可替代加热板的基板支承组件的示意剖视图。
图6为结合了加热板的基板支承组件的示意剖视图，基板支承组件还包括在加热器区域阵列上方的初级加热器层，初级加热器层设置在通过电绝缘层而与在加热板中的所有平面分离的附加平面上。
图7A为示例性等离子体处理腔的示意图，其可以包括具有本文描述的加热板的基板支承组件。
图7B为RF隔离方法的示意图。
图8表示在用于基板支承组件的控制电子设备的一个实施例中的信号流的方框图。
具体实施方式
在半导体处理装置中控制径向或方位角基板温度以实现在基板上的期望关键尺寸（CD）均匀性正变得越来越需要。即使温度的很小变化也会影响CD到不可接受的程度，特别是在半导体制造流程中的CD靠近100nm以下时。
在处理期间，基板支承组件可以配置用于各种功能，例如支承基板、调整基板温度、给射频功率供电。基板支承组件可以包括在处理期间用于通过静电(electrostatically)将基板夹持到基板支承组件上的静电夹头（ESC）。ESC可以是可调(tunable)ESC（T-ESC）。T-ESC描述在共同受让的US专利No.6,847,014和6,921,724中，其在此通过参考并入。基板支承组件可以包括陶瓷基板保持器、流体冷却散热器（下文称为冷却板）、以及多个共心加热器区域以逐步实现径向温度控制。通常，冷却板保持在0℃到30℃之间。加热器设置在冷却板上，在它们之间具有一层隔热层。加热器可以将基板支承组件的支承表面维持在冷却板温度以上的大约0℃到80℃的温度。通过改变多个加热器区域内的加热器功率，基板支撑温度分布轮廓(profile)可以在中央热、中央冷以及一致等几种情况之间变化。此外，在冷却板温度以上的0℃到80℃的操作范围内，可以逐步改变平均的基板支撑温度。当CD随着半导体技术的进步而下降时，小方位角温度变量日益构成较大的挑战。
由于各种原因，控制温度不是容易的事情。首先，许多因素可以影响热传递，例如热源和散热器的位置、介质的运动、介质的材料和形状。第二，热传递是动态过程。除非相关的系统处于热平衡，否则将发生热传递，并且温度分布轮廓和热传递将随着时间变化。第三，非平衡现象使得任何实际等离子体处理装置的热传递性能的理论预期是非常困难的，假如这种预期不是不可能的话，这种非平衡现象（例如对于等离子体）总是存在于等离子体工艺中。
在等离子体处理装置中的基板温度分布轮廓受到许多因素的影响，这些因素如等离子体密度分布轮廓、RF功率分布轮廓、在夹具中的各种加热冷却元件的细节结构，因此基板温度分布轮廓通常不是均匀的并且难以用少量的加热或冷却元件来控制。该缺陷导致在跨越整个基板的处理速率方面的非均匀性和在基板上的设备模块的关键尺寸方面的非均匀性。
考虑到温度控制的复杂特性，将多个独立可控制加热器区域结合在基板支承组件中以使得所述装置能够主动(actively)产生并且保持期望的空间和时间温度分布轮廓，并且能够补偿影响CD均匀性的其他不利因素，这将是有利的。
本文描述的是用于在半导体处理装置中的基板支承组件的、具有多个可控制加热器区域的加热板。该加热板包括加热器区域、电源供应线及电源返回线的可扩展的多重布局结构。通过调整加热器区域的功率，在处理期间的温度分布轮廓可以径向和按方位角定型。虽然描述的该加热板主要用于等离子体的处理装置，但是该加热板也可以使用在不使用等离子体的其他半导体处理装置中。
还描述了用于制造该加热板、包括该加热板的基板支承组件的方法，以及用于供电和控制包括该加热板的基板支承组件的方法。
在该加热板中的加热器优选地设置在限定图案中，例如，矩形网格、六边形网格、环形阵列、共心环、或者任何期望图案。每个加热器区域可以是任何合适的尺寸并且可以具有一个或多个加热器元件。在加热器区域中的每个加热器元件一起接通或断开。为了使电连接的数量最少，电源供应线和电源返回线设置成使得每个电源供应线连接到不同组的加热器区域，并且每个电源返回线连接到不同组的加热器区域，其中每个加热器区域处于连接到特定电源供应线的组中的一个中以及处于连接到特定电源返回线的组中的一个中。没有两个加热器区域连接到相同对的电源供应线和电源返回线。因此，可以通过引导电流经过与加热器区域连接的一对电源供应线和电源返回线来激励这个特定加热器区域。加热器元件的功率优选地小于20W，更优选地为5到10W。加热器元件可以是电阻加热器，例如聚酰亚胺加热器、硅橡胶加热器、云母加热器、金属加热器（例如，W、Ni/Cr合金、Mo或Ta）、陶瓷加热器（例如，WC）、半导体加热器或碳加热器。加热器元件可以是网印、线绕或蚀刻箔加热器。在一个实施例中，每个加热器区域不大于四个制造在所述半导体基板上的设备模块，或者不大于两个制造在所述半导体基板上的设备模块，或者不大于一个制造在所述半导体基板上的设备模块，或者在面积为2-3cm2之间以与在基板上的设备模块相应。加热器元件的厚度范围可以为2微米到1毫米，优选地为5-80微米。为了提供在加热器区域和/或电源供应线与电源返回线之间的空间，加热器区域的总面积可以上至基板支承组件的上表面面积的90%，例如该面积的50-90%。电源供应线或电源返回线（总称电源线）可以以范围从1到10mm的间隙设置在加热器区域之间，或者设置在通过电绝缘层与加热器区域平面隔离的分离平面中。电源供应线和电源返回线优选地制作为与空间容许的一样宽，以便施加较大电流并且减少焦耳热。在一个实施例中，其中电源线处于与加热器区域相同的平面中，电源线的宽度优选地为在0.3到2mm之间。在另一个实施例中，其中电源线处于与加热器区域不同的平面中，电源线的宽度可以与加热器区域一样大，例如对于300mm的夹具，该宽度可以为1到2英寸。电源供应线和电源返回线的材料可以与加热器元件的材料相同或不同。优选地，电源供应线和电源返回线的材料是具有低阻抗的材料，例如Cu、Al、W、或Mo。
图1-2所示为基板支承组件，其包括具有结合在两个电绝缘层104A和104B中的加热器区域101阵列的加热板的一个实施例。电绝缘层可以是聚合物材料，无机材料，陶瓷，例如氧化硅、氧化铝、氧化钇、氮化铝，或者其他合适的材料。基板支承组件还包括(a)具有陶瓷层103（静电夹持层）的ESC，其中嵌入电极102（例如，单极性或双极性）来将基板用DC电压通过静电夹持到陶瓷层103的表面，(b)隔热层107，(c)包含用于冷却剂流动的通道的冷却板105。
如图2所示，每个加热器区域101连接到其中一个电源供应线201和其中一个电源返回线202。任何两个加热器区域101都不共享相同对的电源供应线201和电源返回线202。通过合适的电源开关布置，能够连接一对电源供应线201和电源返回线202到电源（未示出），从而仅连接到该对线的加热器区域接通。每个加热器区域的时间平均加热功率可以通过时分复用来独立地调整。为了防止在不同加热器区域之间的串扰，整流器250（例如，二极管）可以串联地连接在每个加热器区域与连接到该每个加热器区域上的电源供应线之间（如图2所示），或者连接在每个加热器区域与连接到该每个加热器区域上的电源返回线之间（未示出）。整流器可以物理地设置在加热板或者任何合适的位置中。可替代地，诸如固态转换开关等任何电流截止装置可以用于阻止串扰。
图3A、3B和3C表示包括ESC、冷却板、加热板的一个实施例的基板支承组件，其中加热器区域101和电源供应线201设置在第一平面302中，并且电源返回线202设置在通过电绝缘层304而与第一平面302分离的第二平面303中。电源返回线202由在电绝缘层304中的、在第一平面302与第二平面303之间延伸的导电通孔301连接到加热器区域101。
在使用中，电源供应线201和电源返回线202通过在冷却板中的孔或导管连接到在加热板外部的电路。应该认识到在冷却板中的孔或导管的存在会不利地影响基板支承组件的温度均匀性，因此减少在冷却板中的孔或导管的数量可以提高温度均匀性。此外，少量的孔使得将它们布置为绕着基板支承组件的边缘成为可能。例如，在冷却板中的单个电源导管可以使用来馈送电导线到电源供应线201。在一个实施例中（图4A和图4B），加热器区域101和电源供应线201设置在第一平面402中。电源供应线201通过在第一平面402与第二平面403之间延伸的导电通孔301连接到在第二平面403中的导线404。第二平面403通过电绝缘层（未示出）与第一平面402分离。电源返回线202设置在第二平面403中并且通过在第一平面402与第二平面403之间延伸的导电通孔301连接到加热器区域101。在第二平面403中，导线404穿过在冷却板中的孔或导管401，同时保持在导线之间的电绝缘。相似地，电源返回线202连接到穿过在冷却板中的孔或导管406的导线405，同时保持在导线405之间的电绝缘。
图5A、5B、5C和5D表示包括加热板的另一个实施例的基本支承组件，其中加热器区域101设置在第一平面501中；电源供应线201设置在第二平面502中；并且电源返回线202设置在第三平面503中。第一平面501、第二平面502以及第三平面503由电绝缘层504和304来互相分离。电源供应线201和电源返回线202通过在电绝缘层304和504中的、在平面501、502及503之间延伸的导电通孔301连接到加热器区域101。连接到电源供应线201的导线（未示出）被引导通过在层504中的孔或导管505。应该认识到平面501、502及503可以沿着竖直方向以任意顺序布置，只要导通孔和导管适当布置。优选地，加热器布置为最靠近基板支承组件上表面。图5E表示了一实施例，其中，每个加热器区域101通过整流器506（例如二极管）连接到电源返回线202。整流器506仅允许电流从电源供应线201流动经过加热器区域101到达电源返回线202，并且因此阻止在加热器区域之间的串扰。
基板支承组件可以包括附加电绝缘层604，一个或多个附加加热器（下文称为初级加热器601）结合在其中（图6）。优选地，初级加热器601是独立受控的高功率加热器。初级加热器的功率为在100到10000W之间，优选地在1000到5000W之间。初级加热器可以布置为矩形网格、共心圆环区域、径向区域或者环形区域和径向区域的组合。初级加热器可以使用来改变平均温度、调整径向温度分布轮廓、或者在基板上的逐步温度控制。初级加热器可以设置在加热板的加热器区域的上方或下面。
在一个实施例中，在加热板中的至少其中一个隔热层是聚合物材料片。
在另一个实施例中，在加热板中的至少其中一个隔热层是无机材料片，例如陶瓷或氧化硅片。对于在陶瓷夹具的制造中使用的合适隔热和传导材料的实例公开在共同授权的US专利No,6483690中，其公开在此通过参考并入。
基板支承组件可以包括加热板的实施例，其中加热板的每个加热器区域尺寸相似于或小于在基板上的单个设备模块或设备模块组，从而对于每个设备模块位置可以控制基板温度、以及后续的等离子体蚀刻处理，以使得从基板生产该设备的产量最大。加热板的可扩展架构可以容易地容纳逐个模块基板温度控制（通常在300mm直径的基板上有穿过100个的模块）所需要的加热器区域的数量，其中在冷却板中具有最小数量的电源供应线、电源返回线以及管通孔，从而减少对基板温度、制造成本以及基板支承组件的复杂性的干扰。虽然未示出，但是基板支承组件可以包括用于提升基板的装置、例如提升销，氦背部冷却装置，用于提供温度反馈信号的温度传感器，用于提供加热功率反馈信号的电压和电流传感器，用于加热器和/或夹持电极的电力馈电，和/或RF滤波器。
在用于制造加热板的方法的一个实施例中，其中隔热层是陶瓷，隔热层可以利用例如等离子体喷镀、化学气相沉积或溅射等技术通过将陶瓷沉积在合适基板上来形成。该层可以是加热板的起步层或加热板中的一个隔热层。
在用于制造加热板的方法的一个实施例中，其中隔热层是陶瓷，隔热层可以将陶瓷粉末、粘合剂以及液体的混合物压制成片并且烘干该片（下文称为绿色片）来形成。绿色片厚度约0.3mm。导通孔可以通过在绿色片中冲压孔来形成在绿色片中。所述孔填充传导粉末的研磨浆。加热器元件、电源供应线以及电源返回线可以通过如下方式形成：丝网印刷导体粉末（例如W、WC、掺杂SiC或MoSi2）的研磨浆、按压预切割金属箔、喷洒导体粉末的研磨浆、或者其他任何合适技术。用于容纳例如二极管等任何整流器的凹部可以在绿色片的形成处理期间压制或者在形成处理之后在绿色片中切割而成。离散部件整流器可以安装到这些凹部内。然后对齐、压制以及烧结具有各种部件（电源线、导通孔、整流器以及加热器元件）的多个绿色片来形成整个加热板。
在用于制造加热板的方法的另一个实施例中，其中隔热层是陶瓷，隔热层可以将陶瓷粉末、粘合剂以及液体的混合物压制成绿色片并且烘干该绿色片来形成。绿色片可以是大约0.3mm的厚度。在绿色片中冲压孔用于容纳导通孔。用于容纳例如二极管等任何整流器的凹部可以在绿色片的形成处理期间压制或者在形成处理之后在绿色片中切割而成。然后，烧结单个绿色片。在烧结的片中用于容纳导通孔的孔填充传导粉末的研磨浆。加热器元件、电源供应线以及电源返回线可以用导体粉末（例如W、WC、掺杂SiC或MoSi2）的研磨浆丝网印刷在烧结的基板上、或者利用其他任何合适技术形成在烧结的基板上。离散部件整流器可以安装到在烧结的片中的凹部内。然后对齐并且用粘合剂粘结具有各种部件（线、导通孔、整流器以及加热器元件）的多个烧结的片来形成整个加热板。
在一个实施例中，其中隔热层是氧化硅片，该隔热层可以利用例如蒸发、溅射、PVD、CVD、PECVD等技术通过沉积薄膜氧化硅到合适基板上来形成。
在用于制造加热板的方法的一个优选实施例中，例如Al、或Cu箔等薄金属片（部件层）粘结（例如，热压制、用粘合剂粘结）到第一聚合物膜，例如聚酰亚胺膜。图案化阻挡膜施加到部件层的表面，其中图案限定例如加热器元件、电源供应线及电源返回线等电气部件的形状和位置。暴露的金属被化学蚀刻并且阻挡图案保留在剩余的金属片中。然后通过在合适溶液中溶解或者干剥离来去除阻挡膜。对齐并且粘结具有用于容纳导通孔（导通孔层）的孔的第二聚合物膜到第一聚合物膜。孔的侧壁可以在那里用电镀金属涂覆。可以串联地结合任何合适数量的部件层和导通孔层。最后，暴露的金属部件由连续的聚合物膜覆盖用于电绝缘。
在另一个实施例中，加热器元件、电源供应线及电源返回线由沉积（例如，等离子体喷镀、电镀、化学气相沉积、或者溅射）在绝缘层或基板（例如绿色片）上的金属膜制成。
在另一个实施例中，加热器元件、电源供应线及电源返回线由沉积（例如，电镀、化学气相沉积、或者溅射）在绝缘层或基板（例如绿色片）上的例如氧化铟锡之类的非晶体传导无机膜薄层制成。
在又一个实施例中，加热器元件、电源供应线及电源返回线由沉积（例如，化学气相沉积、或者溅射）在绝缘层或基板（例如绿色片）上的传导陶瓷膜的薄层制成。
在一个实施例中，在加热板中的电源供应线及电源返回线可以通过例如嵌入冷却板但与冷却板电绝缘的弹性镶片贯通孔之类的端子连接器连接到外部电路。
在另一个实施例中，在加热板中的电源供应线及电源返回线可以通过附接（钎焊、用传导粘合剂粘结或者点焊）导线到电源供应线及电源返回线并且将这些导线穿过在冷却板中的孔或导管而连接到外部电路。
在等离子体处理系统中，施加在等离子体处理腔中的RF功率通常在100W以上，有时候在1000W以上。RF电压的幅度可以超过1000伏。这样强的RF功率会容易影响加热器区域的控制和供电电路的操作，不会正确地滤波或隔离。RF滤波器可以使用来使RF功率与控制和供电电路旁路。RF滤波器可以是用于使用在等离子体处理系统中的特定RF频率的简单宽带滤波器或调谐滤波器。相反，RF隔离器消除在任何RF耦合部件与控制和供电电路之间的直接电连接。RF隔离器可以是光耦合器或者变压器。
作为等离子体处理腔如何运作的概述，图7A表示包括腔713的等离子体处理腔的示意图，上喷头电极703和基板支承组件704设置在腔713中。基板712通过装载口711装载到基板支承组件704上。气管709供应处理气体到上喷头电极703，其输送处理气体到腔内。气源708（例如动力供应合适气体混合物的质量流量控制器）连接到气管709。RF功率源702连接到上喷头电极703。在操作中，腔内用真空泵710抽空并且RF功率电容性地耦合在上喷头电极703与在基板支承组件704中的下电极之间以将处理气体在基板712与上喷头电极703之间的空间中激发成等离子体。等离子体可以使用来将设备模块特征蚀刻至在基板712上的层中。基板支承组件704可以具有结合在其中的加热器。应该认识到虽然等离子体处理腔的细节设计可以改变，但是RF功率通过基板支承组件704耦合。
图7B表示RF滤波或隔离的实施例的示意图，其中没有滤波器或隔离器连接在加热器区域、电源供应线及电源返回线上，并且控制和供电电路705连接到滤波器或隔离器706B，滤波器或隔离器706B连接到电源地701。如果在基板支承组件中存在初级加热器（未示出）的话，由于它们的高功率，这些加热器优选地具有分离的滤波器或隔离器。以这样的方法，控制和供电电路705浮动在RF电位或“高侧”。该方法允许多个加热器区域仅共享一个滤波器或隔离器。
所有高侧电路可以容纳在紧接在基板支承组件基座结构下面的局部浮动法拉第氏罩内侧。
可替代地，隔离变压器使用作为单个滤波器或隔离器706B以将控制和供电电路705与RF隔离。加热器区域的控制和供电电路705应该能够以相对高频（25到250KHz）来操作，因为变压器强烈地衰减DC和低频传输。控制和供电电路参考单个浮动电位（浮地）。这样要求连接到该隔离变压器的控制和供电电路必须承受非常相似的RF照射。如果RF电位在两组控制和供电电路之间基本上不同，那么明显的电流在这些组之间流动。在这种情况下，各组必须具有它自己的滤波器或隔离器，或者在这些组之间必须具有滤波器或隔离器。
滤波器或隔离器706B可以物理地设置在等离子体处理腔或者任何其他合适的位置中。
加热器控制电子设备的一个实施例描述在图8中。下侧控制器809可以是微控制器单元（MCU）或者较高级的设备，例如计算机（PC）。通过光耦合器807，下侧控制器与高侧MCU 805数字地通信，高侧MCU 805与加热器区域801、传感器803以及任何辅助电路802互动。如果高侧MCU 805具有足够容量和本地存储器，任何设定值或程序可以在每个程序运行之前预装载到高侧MCU 805内，从而消除实时链接到下侧控制器809的需要。804表示在模块之间的单向通信链路。806表示在模块之间的双向通信链路。
在时分复用方案的一个实施例中，高侧MCU相继地供应电力到每个加热器区域电源供应线。相同时间仅一个电源供应线连接到电源。在给一个电源供应线供电期间，高侧MCU可以保持任何或所有电源返回线连接到浮动参考持续这段期间中的一部分时间长度。当连接到加热器区域的至少其中一个电源供应线连接到电源，并且连接到该加热器区域的至少其中一个电源返回线连接到电源时，该加热器区域接通。加热器区域的平均功率直接与它接通的平均时间成正比。可替代地，在给一个电源供应线供电期间，高侧MCU可以保持任何或所有电源返回线连接到浮动参考持续该整段期间，并且调节传输到接通的每个加热器区域的功率。
例如，对于10乘10网格的加热器区域，在行数N中的加热器区域连接到电源供应线数N；在列数M中的加热器区域连接到电源返回线数M。高侧MCU可以控制加热以便每个电源供应线相继连接到电源持续100ms。例如，在电源供应线数3连接到电源的100ms时间期间，根据在该100ms期间具体加热需求所引导的，MCU可操作来将电源返回线7、8和9分别连接到浮动参考持续10、50以及100ms。因此，在行数3和列数7中的加热器区域具有1%的占空比；在行数3和列数8中的加热器区域具有5%的占空比；在行数3和列数9中的加热器区域具有10%的占空比。在该具体实例中，每个加热器区域的最大功率峰值设置为期望的平均最大功率值的10倍。
为了防止可检测的温度调制，切换频率和整个复用方案优选地是足够快速的，频繁地处理每个加热器区域（至少1Hz）。可以利用来自一个或多个传感器的反馈数据执行附加循环控制。如果必要也可以使用电压和电流传感器。这些传感器可以配置来测量例如在基板的不同位置上的温度以及加热器区域的功率等参数。这些测量的参数发送到控制和供电电路以与这些参数的设定目标值比较，从而控制和供电电路可以因而调整输送到加热器区域的功率，以使得在测量的参数与它们的设定目标值之间的差异最小。
虽然已经参考其具体实施例详细地描述了加热板，制造加热板的方法，包括加热板的基板支承组件，以及使用包含基板支承组件的等离子体处理腔的方法，但是对于本领域的技术人员而言，显然，在不脱离附属权利要求的范围情况下，可以作出各种改变和修改，以及使用等同物。例如，基板支承组件可以包括用于监控基板温度的温度传感器，给ESC供电到具有期望夹持电压的电力馈送装置，用于提升和下降基板的提升销装置，用于供应例如氦气等气体到基板下面的热传递气体馈送装置，供应热传递液体到冷却板的温控液体馈送装置，独立给在平坦加热器区域上方或下面的初级加热器供电的电力馈送装置，以一个或多个频率供应RF功率到结合在基板支承组件中的下电极的电力馈送装置，等等。

Claims (56)

1.一种用于使用来支承在半导体处理装置中的半导体基板的基板支承组件的加热板，所述加热板包括：
第一电绝缘层；
平坦加热器区域，其包括至少第一、第二、第三和第四平坦加热器区域，每个包括一个或多个加热器元件，所述平坦加热器区域跨过所述第一电绝缘层横向分布并且可操作来调节在所述基板上的空间温度分布轮廓；
电源供应线，其包括电连接到所述第一和第二平坦加热器区域的至少第一导电电源供应线和电连接到所述第三和第四平坦加热器区域的至少第二导电电源供应线；
电源返回线，其包括电连接到所述第一和第三平坦加热器区域的至少第一导电电源返回线和电连接到所述第二和第四平坦加热器区域的至少第二导电电源返回线。
2.如权利要求1所述的加热板，其中
(a)所述平坦加热器区域和所述电源供应线处于第一平面；所述电源返回线处于与所述第一平面平行的第二平面；所述第一和第二平面通过所述第一电绝缘层互相分离；所述电源返回线通过垂直于所述第一电绝缘层延伸的导通孔电连接到所述平坦加热器区域；
(b)所述平坦加热器区域和所述电源返回线处于第一平面；所述电源供应线处于与所述第一平面平行的第二平面；所述第一和第二平面通过所述第一电绝缘层互相分离；所述电源供应线通过垂直于所述第一电绝缘层延伸的导通孔电连接到所述平坦加热器区域；或者
(c)所述平坦加热器区域处于第一平面；所述电源供应线处于与所述第一平面平行的第二平面；所述电源返回线处于与所述第一平面平行的第三平面；所述第一和第二平面通过所述第一电绝缘层互相分离；所述第二和第三平面通过第二电绝缘层互相分离；所述电源供应线和电源返回线经由延伸通过所述电绝缘层的导通孔电连接到所述平坦加热器区域。
3.如权利要求1所述的加热板，其中所述平坦加热器区域的尺寸确定为：
(a)每个平坦加热器区域不大于四个制造在所述半导体基板上的设备模块，或者
(b)每个平坦加热器区域不大于两个制造在所述半导体基板上的设备模块，或者
(c)每个平坦加热器区域不大于一个制造在所述半导体基板上的设备模块，或者
(d)每个平坦加热器区域的面积是在2-3平方厘米之间，或者
(e)所述加热板包括100到400个平坦加热器区域，或者
(f)每个平坦加热器区域是1到15cm2，或
(g)每个平坦加热器区域16到100cm2，或
(h)每个平坦加热器区域按在所述半导体基板上的设备模块的尺寸和所述半导体的整体尺寸来排列。
4.如权利要求1所述的加热板，其中所述第一电绝缘层包括聚合物材料、陶瓷材料、或者其组合。
5.如权利要求1所述的加热板，其中所述电源供应线和所述电源返回线的总数等于或小于平坦加热器区域的总数。
6.如权利要求1所述的加热板，其中所述平坦加热器区域的总面积是所述加热板的上表面的50％到90％。
7.如权利要求1所述的加热板，其中所述平坦加热器区域设置为矩形网格、六边形网格或者同心环；并且所述平坦加热器区域由宽度为至少1毫米以及宽度为至多10毫米的间隙互相分离。
8.如权利要求1所述的加热板，其中整流器串联地连接在每个加热器区域与连接到其上的所述电源供应线之间，或者整流器串联地连接在每个加热器区域与连接到其上的电源返回线之间。
9.如权利要求8所述的加热板，其中所述整流器是半导体二极管。
10.一种基板支承组件，包括：
静电夹头(ESC)，其包括具有配置来通过静电将半导体基板夹持在所述基板支承组件上的至少一个夹持电极的静电夹持层；
设置在所述静电夹持层下面的如权利要求1所述加热板；
由隔热层附接到所述加热板下侧的冷却板。
11.如权利要求10所述的基板支承组件，其中：
(a)所述电源供应线连接到互相电绝缘并且延伸通过在所述冷却板中的至少一个电源供应导管的导线，并且所述电源返回线连接到互相电绝缘并且延伸通过在所述冷却板中的至少一个电源返回导管的导线；或者
(b)所述电源供应线和所述电源返回线连接到嵌入在所述冷却板中的端子连接器。
12.如权利要求10所述的基板支承组件，还包括控制和供电电路，其可操作来选择性地在任何给定时间供电到(a)仅所述第一平坦加热器区域，(b)仅所述第二平坦加热器区域，(c)仅所述第三平坦加热器区域，(d)仅所述第四平坦加热器区域，(e)仅所述第一和第二平坦加热器区域，(f)仅所述第一和第三平坦加热器区域，(g)仅所述第二和第四平坦加热器区域，(h)仅所述第三和第四平坦加热器区域，以及(i)全部所述平坦加热器区域。
13.如权利要求12所述的基板支承组件，还包括串联连接在所述控制和供电电路与电源接地之间的至少一个滤波器或隔离器。
14.如权利要求13所述的基板支承组件，其中所述至少一个滤波器或隔离器是变压器。
15.如权利要求10所述的基板支承组件，还包括设置在所述加热板的第一电绝缘层上面或下面的至少一个初级加热器层，其中所述初级加热器层与所述加热板的所述平坦加热器区域、所述电源供应线以及所述电源返回线电绝缘；所述初级加热器层包括提供所述半导体基板的平均温度控制的至少一个加热器；所述平坦加热器区域在处理期间，提供所述半导体基板的径向和方位角温度分布轮廓控制。
16.一种用于制造权利要求1的所述加热板的方法，包括：
(a)形成在陶瓷片中的孔；
(b)丝网印刷导体粉末的研磨浆、或者按压预切割金属箔、或者喷洒导体粉末的研磨浆在所述陶瓷片上以形成所述平坦加热器区域、所述电源供应线、以及电源返回线；
(c)用导体粉末的研磨浆填充在所述陶瓷片中的孔以形成电源供应和电源返回导通孔；
(d)对齐、按压和粘结所述陶瓷片以形成所述加热板。
17.如权利要求16所述的用于制造所述加热板的方法，其中：
(a)所述平坦加热器区域和电源供应线形成在第一陶瓷片的上侧上，所述电源返回线形成在所述第一陶瓷片的下侧上，第二陶瓷片放置在所述第一陶瓷片的上表面上方并且第三陶瓷片放置在所述第一陶瓷片的下方，并且所述第一、第二和第三陶瓷片按压在一起并且烧结来形成无缝加热板；或者
(b)所述平坦加热器区域形成在第一陶瓷片的上侧上，所述电源供应线形成在布置在所述第一陶瓷片下面的第二陶瓷片的上侧上，所述电源返回线形成在布置在所述第二陶瓷片下面的第三陶瓷片的上侧上，第四陶瓷片放置在所述第一陶瓷片的上表面上方，并且所述第一、第二、第三和第四陶瓷片按压在一起并且烧结来形成无缝加热板。
18.一种用于制造权利要求1所述的加热板的方法，包括：
制造部件层，其包括下列步骤：
(a)粘结金属片到聚合物膜上；
(b)应用形成图案阻挡膜到所述金属片上，其中在所述形成图案阻挡膜中的开口与要去除的金属所在的位置相应；
(c)蚀刻所述金属片以去除通过所述阻挡膜的开口暴露的金属，所述蚀刻形成所述平坦加热器区域、电源供应线和/或电源返回线的导电金属图案；
(d)去除所述阻挡膜；
制造导通孔层，其包括下列步骤：
(a)冲压或切割在聚合物膜中的孔；
(b)在所述孔中形成导电通孔；
通过粘结一个或多个部件层以及一个或多个导通孔层来建立积层；
通过将连续聚合物膜粘结在所述积层的上和/或下表面上来使所述积层绝缘。
19.一种用于制造权利要求1所述的加热板的方法，包括：
沉积金属、非晶体传导无机材料、或者传导陶瓷在所述第一绝缘层上以形成所述平坦加热器区域、电源供应线和/或电源返回线。
20.一种用于在包括权利要求10所述的基板支承组件的等离子体处理腔中等离子体处理半导体基板的方法，包括：
(a)装载半导体基板到所述处理腔内并且定位所述半导体基板在所述基板支承组件上；
(b)确定温度分布轮廓，以补偿影响关键尺寸(CD)均匀性的处理情况；
(c)利用所述基板支承组件加热所述半导体基板以符合所述温度分布轮廓；
(d)当通过独立控制所述平坦加热器区域的加热来控制所述温度分布轮廓时，点燃等离子体并且处理所述半导体基板；
(e)从所述处理腔卸载所述半导体基板并且使用不同半导体基板重复步骤(a)-(e)。
21.如权利要求11所述的基板支承组件，其中所述端子连接器是弹性镶片贯通孔。
22.如权利要求15所述的基板支承组件，其中所述初级加热器层包括两个或更多个加热器。
23.一种给支承半导体基板的基板支承组件中的加热器提供功率的方法，所述支承组件包括：加热器阵列，其通过两个或更多个电源供应线和两个或更多个电源返回线供应功率，其中每一个电源供应线连接到电源及所述加热器中的至少两个上，每一个电源返回线连接到所述加热器的至少两个上；和开关装置，其独立地将所述加热器中的每一个连接到所述电源供应线中的一个以及所述电源返回线中的一个以便通过所述开关装置的开关的时分复用来所述加热器中的每一个提供时间平均功率，所述方法包括使用时分复用方案向所述加热器中的每一个连续供应功率。
24.根据权利要求23所述的给基板支承组件中的加热器提供功率的方法，其中仅有一个电源供应线同时与电源连接。
25.根据权利要求23所述的给基板支承组件中的加热器提供功率的方法，其中所述加热器中的每一个的平均功率与该加热器接通的平均时间成正比。
26.根据权利要求23所述的给基板支承组件中的加热器提供功率的方法，其中所述加热器呈网格布局，在该网格布局中，在行数N中的加热器连接到数N的电源供应线上，在列数M中的加热器连接到数M的电源返回线上。
27.根据权利要求23所述的给基板支承组件中的加热器提供功率的方法，其中所述电源供应线中的每一个相继连接到电源上。
28.根据权利要求23所述的给基板支承组件中的加热器提供功率的方法，其中每个加热器以至少1Hz的频率处理。
29.根据权利要求23所述的给基板支承组件中的加热器提供功率的方法，其中传感器测量发送到控制和供电电路的参数，所述控制和供电电路调整输送到所述加热器的功率，从而使得在所测量的所述参数与设定目标值之间的差异最小。
30.根据权利要求23所述的给基板支承组件中的加热器提供功率的方法，其中设置所述加热器的尺寸使得：
(a)每个加热器不大于四个制造在所述半导体基板上的设备模块，或
(b)每个加热器不大于两个制造在所述半导体基板上的设备模块，或者
(c)每个加热器不大于一个制造在所述半导体基板上的设备模块，或
(d)每个加热器的面积在2-3cm2之间，或
(e)所述加热器阵列包括100到400个平坦加热器，或
(f)每个加热器加热1到15cm2的平坦加热器区域，或
(g)每个加热器加热16到100cm2的平坦加热器区域，或
(h)每个加热器根据在所述半导体基板上的设备模块的尺寸和所述半导体的整体尺寸来设置。
31.根据权利要求23所述的给基板支承组件中的加热器提供功率的方法，其中所述电源供应线和所述电源返回线的总数等于或小于所述加热器的总数。
32.根据权利要求23所述的给基板支承组件中的加热器提供功率的方法，其中所述加热器设置为矩形网格、六边形网格或者同心环；并且所述加热器由宽度为至少1毫米以及宽度为至多10毫米的间隙互相分离。
33.根据权利要求23所述的给基板支承组件中的加热器提供功率的方法，其中整流器串联地连接在每个加热器区域与所述电源供应线之间，或者整流器串联地连接在每个加热器区域与所述电源返回线之间。
34.根据权利要求23所述的给基板支承组件中的加热器提供功率的方法，其中至少一个初级加热器层设置在支承所述加热器的加热板的第一电绝缘层上面或下面，其中所述初级加热器层与所述加热器、所述电源供应线以及所述电源返回线电绝缘；所述初级加热器层包括提供所述半导体基板的平均温度控制的至少一个加热器；所述加热器提供所述半导体基板的径向和方位角温度分布轮廓控制，所述方法包括向所述初级平坦加热器层提供功率至预定的温度并向处理所述半导体基板的等离子体提供功率。
35.根据权利要求23所述的给基板支承组件中的加热器提供功率的方法，进一步包括：
(a)装载半导体基板到处理腔内并且定位所述半导体基板在所述基板支承组件上；
(b)确定温度分布轮廓，以补偿影响关键尺寸(CD)均匀性的处理情况；
(c)利用所述基板支承组件加热所述半导体基板以符合所述温度分布轮廓；
(d)当通过独立控制所述平坦加热器区域的加热来控制所述温度分布轮廓时，点燃等离子体并且处理所述半导体基板；
(e)从所述处理腔卸载所述半导体基板并且使用不同半导体基板重复步骤(a)-(e)。
36.根据权利要求35所述的给基板支承组件中的加热器提供功率的方法，其中所述处理包括等离子体蚀刻所述半导体基板。
37.根据权利要求23所述的给基板支承组件中的加热器提供功率的方法，其中当一个电源供应线被供给功率时，选择将被激励的返回线，并且按顺序将多个所选择的所述返回线连接到浮动参考点持续相同或者不同的时间，从而调节供应至与所述电源供应线和所选择的所述返回线连接的加热器上的功率。
38.根据权利要求23所述的给基板支承组件中的加热器提供功率的方法，其中所述加热器是电阻加热器，并且供应至所述电阻加热器上的最大功率是20W。
39.根据权利要求23所述的给基板支承组件中的加热器提供功率的方法，其中每个加热器的时间平均加热功率通过所述时分复用来独立地进行调整。
40.根据权利要求23所述的给基板支承组件中的加热器提供功率的方法，其中所述基板支承组件包括被供给100至10000W的功率的初级加热器，所述初级加热器位于所述加热器阵列之下。
41.一种用于支承等离子体处理室中的半导体基板的半导体基板支承件，其包括：
可操作地调节所述半导体基板上的空间温度轮廓的加热器阵列，所述加热器通过两个或更多个电源供应线和两个或更多个电源返回线提供功率，其中每一个电源供应线连接到所述加热器中的至少两个上，每一个电源返回线连接到所述加热器的至少两个上；和
开关装置，其通过所述电源供应线中的一个以及所述电源返回线中的一个独立地向所述加热器中的每一个供应功率以便通过所述开关的时分复用来所述加热器中的每一个提供时间平均功率。
42.根据权利要求41所述的半导体基板支承件，进一步包括温度受控的并且由射频(RF)供能的基座板，该基座板位于所述加热器阵列和高侧电路之下，该高侧电路容纳在所述基座板下的局部的法拉第氏罩内。
43.根据权利要求41所述的半导体基板支承件，进一步包括具有第一电绝缘层的加热板，所述加热板阵列设置在平坦加热器区域内，该平坦加热器区域包括至少第一、第二、第三和第四平坦加热器区域，每个平坦加热器区域包括一个或多个加热器元件，所述平坦加热器区域跨过所述第一电绝缘层横向分布，所述电源供应线包括电连接到所述第一和第二平坦加热器区域的至少第一导电电源供应线和电连接到所述第三和第四平坦加热器区域的至少第二导电电源供应线，并且所述电源返回线包括电连接到所述第一和第三平坦加热器区域的至少第一导电电源返回线和电连接到所述第二和第四平坦加热器区域的至少第二导电电源返回线。
44.根据权利要求41所述的半导体基板支承件，进一步包括温度传感器，该温度传感器测量发送到控制和供电电路的参数，所述控制和供电电路调整输送到所述加热器的功率，从而使得在所测量的所述参数与设定目标值之间的差异最小。
45.根据权利要求41所述的半导体基板支承件，其中所述开关装置连接到隔离器上，该隔离器连接到电子地。
46.根据权利要求45所述的半导体基板支承件，其中所述开关装置位于所述等离子体处理室内。
47.根据权利要求45所述的半导体基板支承件，其中所述隔离器是将所述开关转换器与RF隔离开来的隔离变压器。
48.根据权利要求41所述的半导体基板支承件，进一步包括至少一个初级加热器层，其设置在支承所述加热器的加热板的第一电绝缘层上面或下面，其中所述初级加热器层与所述加热器、所述电源供应线以及所述电源返回线电绝缘；所述初级加热器层包括提供所述半导体基板的平均温度控制的至少一个加热器，所述加热器提供所述半导体基板的径向和方位角温度分布轮廓控制。
49.根据权利要求47所述的半导体基板支承件，其中所述开关装置为高侧控制器，并且所述基板支承件还包括与所述高侧控制器连接以实现与下侧控制器数字通信的光耦合器。
50.根据权利要求41所述的半导体基板支承件，其中所述开关装置将至少一个电源返回线连接至浮动参考。
51.根据权利要求41所述的半导体基板支承件，其中，当连接到加热器的至少一个电源返回线连接到电源时，并且连接到所述加热器的至少一个电源返回线连接到浮动参考时，所述开关装置打开所述加热器。
52.根据权利要求41所述的半导体基板支承件，其中，所述开关装置将所有的电源返回线连接到浮动参考。
53.根据权利要求41所述的半导体基板支承件，其中，所述开关装置以至少1Hz的频率处理每个加热器。
54.根据权利要求41所述的半导体基板支承件，还包括被设置为测量所述基板支承件上不同位置的参数以及所述加热器的功率的传感器。
55.根据权利要求54所述的半导体基板支承件，其中，所述传感器包括电压传感器和电流传感器中的至少一个。
56.根据权利要求54所述的半导体基板支承件，其中，所测量的所述参数包括至少温度测量值。
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