CN102652352B - 调节基板温度来改进关键尺寸（cd）的均匀性 - Google Patents

调节基板温度来改进关键尺寸（cd）的均匀性 Download PDF

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CN102652352B
CN102652352B CN201080055995.1A CN201080055995A CN102652352B CN 102652352 B CN102652352 B CN 102652352B CN 201080055995 A CN201080055995 A CN 201080055995A CN 102652352 B CN102652352 B CN 102652352B
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基思·威廉·加夫
哈米特·辛格
基思·科门丹特
瓦希德·瓦赫迪
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Abstract

一种具有带有多个独立可控加热器区域的基板支承组件的等离子体蚀刻系统。该等离子体蚀刻系统被配置用来控制预定位置的蚀刻温度，以便可以补偿关键器件参数蚀刻前和蚀刻后的不均匀性。

Description

调节基板温度来改进关键尺寸（CD）的均匀性
相关申请
本申请根据U.S.C.§119主张2009年12月15日提交的，美国临时申请号为No.61/286,653的优先权，通过引用将该临时申请的整体内容并入本申请中。
背景技术
随着各种后续的半导体技术的产生，例如晶片等基板的直径趋于增大而晶体管尺寸变小，导致在基板处理中需要更高程度的精度和可重复性。半导体基板材料，例如硅基板，由包括使用真空室在内的技术来处理。这些技术既包括电子束沉积等非等离子体的应用，也包括溅射沉积法、等离子体增强化学气相沉积法（PECVD）、抗蚀剂剥离和等离子体蚀刻等等离子体的应用。
今天可用的等离子体蚀刻系统属于那些对改进精度和可重复性有着日益增强的需求的半导体制造工具。用于等离子体蚀刻系统的一个度量标准为均匀性的提高，其包括在半导体基板表面上的处理结果的均匀性以及通过额定相同输入参数处理的一系列基板的处理结果的均匀性。基板上均匀性的连续提高是可以期望的。除此之外，这还需要具有改进的均匀性、一致性和自我诊断的等离子体室。
发明内容
此处公开的是一种利用等离子体蚀刻系统的方法，该系统包括在等离子体蚀刻过程中支承基板的基板支承组件，该基板支承组件包括多个排列在基板上的器件管芯位置（devicedielocations）下的独立可控加热器区域和控制每个加热器区域的控制单元。该方法包括（a）在基板上的基板器件管芯位置测量先前已蚀刻的基板的蚀刻前或蚀刻后的关键器件参数；（b）将蚀刻前和蚀刻后的关键器件参数传输到等离子体蚀刻系统；（c）其后将基板支承在基板支承组件上；（d）将处理配方参数传输到等离子体蚀刻系统和/或将存储器中的处理配方参数载入等离子体蚀刻系统；（e）根据处理配方参数输入基板的目标蚀刻后的关键器件参数数据和蚀刻前的关键器件参数，和/或者先前已蚀刻的基板的蚀刻后的关键器件参数来推断在基板上预定位置上的目标蚀刻温度；（f）通过应用可控的加热器区域，以预定位置上的目标蚀刻温度为依据调节每一预定位置的温度；和（g）等离子体蚀刻基板。
具体实施方式
在半导体处理装置中，控制径向或方位角基板温度以实现在基板上的目标关键尺寸（CD）均匀性正变得越来越需要。即使温度的很小变化也会影响CD到不可接受的程度，特别当在半导体制造过程中CD靠近亚-20nm（sub-20nm）时。
在处理过程中，基板支承组件可以被配置成具有各种功能，例如支承基板、调整基板温度、提供射频功率。基板支承组件可以包括在处理过程中用来将基板通过静电夹持到基板支承组件上的静电夹头（ESC）。该ESC可以是可调静电夹头（T-ESC）。T-ESC在共同受让的美国专利号6,847,014和6,921,724中有描述，通过引用将这些专利并入本申请中。基板支承组件可以包括陶瓷基板支托器、流体冷却散热器（以下称为冷却板）以及多个同轴加热区域以逐步实现径向温度控制。通常，冷却板被保持在0℃到30℃之间。加热器设置在冷却板上，在它们之间具有隔热层。加热器可以将基板支承组件的支承表面维持在高于冷却板温度大约0℃到80℃的温度。通过改变在多个加热器区域内的加热功率，基板支承温度轮廓分布可以在中心区变热、中心区变冷和均匀之间发生变化。更进一步，平均基板支承温度在高于冷却板温度大约0℃到80℃的操作范围内逐渐地变化。当CD随着半导体技术的进步而下降时，小方位角温度变量带来日益加剧的更大的挑战。
由于各种原因，控制温度不是容易的事情。首先，许多因素可以影响热传递，例如热源和散热器的位置，介质的运动、材料和形状。第二，热传递是动态过程。除非相关系统处于热平衡，否则将发生热传递，并且温度轮廓和热传递将随着时间变化。第三，非平衡现象，例如等离子体，其当然总是存在于等离子体处理过程中，使得任何实际等离子体处理装置的热传递性能的理论预期即使可能的话，也是非常困难的。
在等离子体处理装置中，基板温度轮廓受到许多因素的影响，例如等离子体密度轮廓、RF功率轮廓、在夹具中的各种加热冷却元件的细节结构，因此基板温度轮廓通常不是均匀的并且难以用少量的加热或冷却元件来控制。该缺陷转变为在跨过整个基板的处理速率方面的非均匀性和在基板上的器件管的关键尺寸方面的非均匀性。
关键尺寸方面的非均匀性可以由上游的工艺流程引起，例如，光刻。由于光刻的平行特征（例如在基板上所有器件管芯同时暴露）和因素很难控制，例如光源不均匀性，光掩膜上的衍射，温度的不均匀性，光刻胶厚度的不均匀性等，使得光刻后和蚀刻前的基板在器件特征上通常有不均匀性。如果未经检查并让其传递到下游的工艺流程，这种不均匀性可以导致减少器件产量。
在基板支承组件中设置多个独立可控的加热器区域以使得等离子体蚀刻系统能够有效产生并且保持既定的空间和时间温度轮廓，并且能够补偿影响CD均匀性的其他不利因素，这将是有利的和可取的。
带有独立受控的加热器区域的基板支承组件在2009年10月21日提交的美国专利申请号12/582,991中被公开，通过引用将这些专利并入本申请中。
本文描述的是运用等离子体蚀刻系统的方法，该系统有带有多个独立可控的加热器区域的基板支承组件，该方法在蚀刻过程中，通过测量基板上多个器件管芯位置上的蚀刻前关键器件参数或者先前已被蚀刻的基板的蚀刻后关键器件参数，并且运用已测量的信息调节基板上预定位置上的温度，从而补偿将要蚀刻的基板的不均匀性。
例如，在基板经过平板印刷之后，在基板的抗蚀层上形成图案。抗蚀层上的图案的关键尺寸处可能有不均匀性。基板上每个器件管芯上的抗蚀层内的蚀刻前关键尺寸可以用合适的工具来测量。在下部的后续的基板的等离子体蚀刻中图案化抗蚀层被用来作为掩膜。等离子体蚀刻过程的温度可以影响基板上被蚀刻的图案的关键尺寸（蚀刻后关键尺寸）。如果在器件管芯位置上的蚀刻前关键尺寸确定会下降到目标值的可容忍误差之外，可以通过加热器区域调整器件管芯位置上的蚀刻温度以使得蚀刻后的关键尺寸在目标值可容忍误差之内。因此，经过测量的蚀刻前关键尺寸可以用来调整每个器件管芯位置上的蚀刻温度，以补偿器件管芯位置上蚀刻前关键尺寸内特定数量的误差。
等离子体蚀刻系统可以有组装在加热板中的独立的可控的加热器区域以及控制每个加热器区域的控制单元。在控制单元的控制下，通过调整每个加热器区域的功率，处理过程中的温度轮廓可以径向和按方位角定型。该加热器区域优选地设置在限定图案中，例如，矩形网格、六边形网格或者其他图案。加热板的每个加热器区域与基板上的单个器件管芯优选有相似的尺寸（例如±10%）。在典型的装置中，为了减少电线接头的数量，电源供应线和电源返回线设置为，每个电源供应线连接到不同组的加热器区域，并且每个电源返回线连接到不同组的加热器区域，其中每个加热器区域处于连接到特定电源供应线的组中的一个中以及处于连接到特定电源返回线的组中的一个中。两个加热器区域不连接到相同对的电源供应线和电源返回线。因此，加热器区域可以通过引导电流经过一对电源供应线和电源返回线连接到特定的加热器区域上来触发。加热器元件的功率优选地小于20W，更优选地为5W到10W。加热器元件可以是佩尔蒂埃（Peltier）器件和/或电阻加热器，例如聚酰亚胺加热器、硅橡胶加热器、云母加热器、金属加热器（例如，W、Ni/Cr合金、Mo或Ta）、陶瓷加热器（例如，WC）、半导体加热器或碳加热器。加热器元件可以是网印、线绕或蚀刻箔加热器。加热器元件的厚度范围可以为2微米到1毫米，优选为5-80微米。为了提供在加热器区域和/或电源供应线与电源返回线之间的空间，加热器区域的总面积可以上至基板支承组件的上表面面积的90%，例如该面积的50-90%。电源供应线或电源返回线（总称电源线）可以设置在加热器区域之间的范围从1到10mm的间隙里，或者设置在通过电绝缘层与加热器区域隔离的分离平面中。电源供应线和电源返回线优选地制作为与空间容许的一样宽，以便输送大的电流并且减少焦耳热。电源线可以处于与加热器区域相同的平面中，也可以处于与加热器区域不同的平面中。电源供应线和电源返回线的材料可以与加热器元件的材料相同或不同。优选地，电源供应线和电源返回线的材料是具有低阻抗的材料，例如Cu、Al、W、或Mo。基板支承组件可操作以控制基板温度，并且因此控制每一器件管芯位置上的等离子体蚀刻过程，从而使基板上的器件产量达到最大化。等离子体蚀刻系统优选有9个加热器区域。
在一个实施例中，等离子体蚀刻系统可以从例如人类使用者、机载测量工具、主机网络（在处理线内的处理工具间分享数据的网络）等源头，接收在将在系统中处理的基板上的多个器件管芯位置（优选在每个器件管芯位置上的至少一个位置）测得的关键器件参数（例如蚀刻前关键尺寸）。优选地，等离子体蚀刻系统可以通过主机通讯网络从脱机（off-board）检查工具接收批量的将被处理的基板的蚀刻前关键器件参数。这种脱机检查工具可以是光的和/或者电子束检查工具。等离子体蚀刻系统可以有软件和/或硬件接口来接收蚀刻前关键器件参数。等离子体蚀刻系统可以有合适的软件来处理蚀刻前关键器件参数。
等离子体蚀刻系统也可以通过硬件和/或软件接口接收和/或通过存储器载入处理配方参数，该处理配方参数定义了目标蚀刻后关键器件参数与已测量的蚀刻前关键器件参数和蚀刻温度的相关性；并且根据处理配方参数、目标蚀刻后关键器件参数和测得的蚀刻前关键器件参数来推断在基板上预定的位置上的目标蚀刻温度。优选地，对于每一处理配方阶段，等离子体蚀刻系统可以接收这样的处理配方参数。
优选地，等离子体蚀刻系统可以基于每个器件管芯位置的目标蚀刻温度，进一步计算用于每一个加热器区域的目标控制参数（可以直接被控制的参数，例如功率，电压，电流等），以便为每一个器件管芯获得目标关键器件参数。
在基板支承组件生产过程中，通过测量基板支承组件的表面温度对应用到其上的不同控制参数的响应，可以获得目标控制参数。可替代地，目标控制参数可以运用例如热转移理论或者有限元分析等理论的或者经验的模型来确定。
优选地，通过每个器件管芯位置对适用于底部加热器区域的可控参数的直接响应以及通过所述器件管芯对适用于其他加热器区域可控参数的间接响应(串扰)，稳态增益矩阵可以被用来计算目标控制参数。运用G.Golub等人的《矩阵计算》(约翰斯·霍普金斯大学出版，波士顿，1996)中描述的方法可以计算出稳态增益矩阵，通过引用将该整体内容并入本申请中。
在一个实施例中，假设等离子体蚀刻系统有n独立的加热器区域。它们各自的控制参数为Xi(i＝1，2，...，n)。所有的控制参数Xi可以写成以下矢量：
X = X 1 X 2 . . . X n ,
其中Xi优选是适用于第i个加热器区域的时间平均功率。
Ti是第i个加热器区域内的器件管芯位置上的目标蚀刻温度，可以写成另外一种矢量：
T = T 1 T 2 . . . T n ,
矢量T是矢量X的函数。矢量X和T之间的关系可以通过n*n阶矩阵K来描述，其中T＝K·X。在基板支承组件或者等离子体蚀刻系统生产过程中，对角线的要素Kii可以被测量。在基板支承组件或者等离子体蚀刻系统生产过程中，非对角线的要素Kij(i≠j)可以被测量，或者从有限元热模型、对角要素的值和第i个和第j个加热器区域之间的物理距离的值推导出来。矩阵K被存储在等离子体蚀刻系统内。等离子体蚀刻系统也有软件或者固件，该软件或者固件能用于执行基于T推导x的算法。该算法是逆矩阵再乘以矩阵，即X＝K-1·T。
在另外的实施例中，假设等离子体蚀刻系统有n个独立的加热器区域。它们各自的控制参数为Xi(i＝1，2，...，n)。所有的控制参数Xi可以写成以下矢量：
X = X 1 X 2 . . . X n ,
其中Xi优选是适用于第i个加热器区域的时间平均功率。
P＝{Pj}是基板上预定位置已断定的蚀刻温度的集合，在基板上响应于每一个加热器区域的温度基于现有的模型或者标准尺寸是已知的。P可以写成另外一种矢量：
P = P 1 P 2 . . . Pm ,
T＝{Tj}是基板上相同的预定位置目标蚀刻温度的集合。T可以写成以下矢量：
T = T 1 T 2 . . . Tm ,
在该实施例中，有各自目标蚀刻温度的基板上的位置的数量m与加热器区域的数量是不相等的，例如m≠n。有温度响应的位置可以与加热器区域的位置不同。矢量P是矢量X的函数。矢量P和T之间的关系可以通过m*n阶矩阵K来描述，其中P＝K·X。在基板支承组件或者等离子体蚀刻系统生产过程中，要素Kij可以被测量或者从限定元热模型被推导出来。矩阵K被存储在等离子体蚀刻系统内。通过运用矩阵或者最优化的计算程序，例如最小二乘优化，等离子体蚀刻系统也有软件或者固件，该软件和固件能用于执行算法，以根据T，使用矩阵和优化算法（例如最小二乘优化）来推导出X。通过将器件管芯位置的预定温度与基板上各自位置的目标温度之间的差异最小化，优化算法简化了加热器功率设定值（setpoint）的计算。
在以上的实施例中，测量诸如CD值等基板特征的位置可以根据加热器区域的数量而变化。另外，测量基板特征的位置，与基于例如在生产期间的模型或者之前的测量而已知的每个加热器区域的温度响应的位置不一致。更确切地说，基板特征测量位置与用于构建矩阵K的位置是不同的。因此，与用于构建矩阵K的相同的位置，基板特性需要被估算。在优选的实施例中，可以使用例如线性插值或者非线性插值之类技术将例如CD值等为基板特征数据从基板特性测量位置转变到在校准过程中已模式化或者已测得个别加热器响应的位置，该位置即构建矩阵K的位置。
在可替代的实施例中，控制参数可以通过控制电路（例如一个PID控制器），基于每一个加热器区域的温度传感器(例如光传感器，热耦合器，二极管等)的输出而动态地确定。
虽然已经参考其中的具体实施例详细地描述了运用等离子体蚀刻系统的方法，但是对于本领域的技术人员而言，显而易见，在不脱离所附权利要求的范围的情况下，可以作出各种改变和修改，以及使用等同方案。

Claims (16)

1.一种运用等离子体蚀刻系统的方法，所述等离子体蚀刻系统包括在等离子体蚀刻过程中支承基板的基板支承组件，该基板支承组件包括多个排列在所述基板上的器件管芯位置下的独立可控加热器区域和控制每个加热器区域的控制单元；所述方法包括：
在所述基板上的多个器件管芯位置上测量蚀刻前关键器件参数；
将来自先前被蚀刻的基板上的所述蚀刻前关键器件参数和蚀刻后关键器件参数中的至少一个传输到所述等离子体蚀刻系统；
随后将所述基板支承在所述基板支承组件上；
将处理配方参数传输到所述等离子体蚀刻系统和/或者将来自存储器的处理配方参数传输到所述等离子体蚀刻系统；
通过所述处理配方参数、目标蚀刻后关键器件参数，所述蚀刻前关键器件参数和所述蚀刻后关键器件参数中的至少一个推断出所述基板上预定位置的目标蚀刻温度；
运用所述可控的加热器区域将每个器件管芯位置的温度调节到其目标蚀刻温度；和
等离子体蚀刻所述基板。
2.如权利要求1所述的方法，还包括针对蚀刻处理方案的每一步将处理配方参数传输到所述等离子体蚀刻系统和/或将来自存储器处理配方参数载入到所述等离子体蚀刻系统。
3.如权利要求1所述的方法，还包括基于所述基板上的所述预定位置的所述目标蚀刻温度，传输和/或计算每个加热器区域的目标控制参数。
4.如权利要求1所述的方法，其中当所述加热器区域的数量和所述器件管芯位置的数量相等时，运用所述可控制的加热器区域调节温度的步骤包括：
通过将描述所述加热器区域的所述目标控制参数和所述器件管芯位置的所述目标蚀刻温度之间的关系的逆矩阵乘以其元素为所述器件管芯位置的所述目标蚀刻温度的矢量来确定所述加热器区域的加热器功率设定值。
5.如权利要求1所述的方法，其中所述等离子体蚀刻系统包括被配置用来测量每个加热器区域位置的蚀刻温度的一个或者更多个的温度感应器，所述方法还包括基于温度感应器的输出计算每个加热器区域的目标控制参数。
6.实施如权利要求1所述方法的等离子体蚀刻系统，包括在等离子体蚀刻过程中用来支承基板的基板支承组件，该基板支承组件包括排列在所述基板下的多个独立可控加热器区域和控制每个加热器区域的控制单元。
7.如权利要求6所述的实施所述方法的所述等离子体蚀刻系统，包括通过主机通讯网络的脱机检查工具接收所述蚀刻前或所述蚀刻后关键器件参数的接口。
8.如权利要求1所述的方法，其中当所述加热器区域的数量和所述器件管芯位置的数量不相等时，运用所述可控制的加热器区域调节温度的步骤包括：
基于描述所述加热器区域的所述目标控制参数和所述基板上的所述预定位置的预定蚀刻温度之间的关系的矩阵，来确定所述加热器区域的加热器功率设定值，
其中所述器件管芯位置的所述预定蚀刻温度和所述器件管芯位置的所述目标蚀刻温度之间的差异通过优化技术被减到最小。
9.如权利要求8所述的方法，其中所述优化技术是最小二乘优化。
10.运用等离子体蚀刻系统的方法，所述等离子体蚀刻系统包括在等离子体蚀刻过程中用于支承基板的基板支承组件，所述基板支承组件包括多个排列在基板上的器件管芯位置下的独立可控加热器区域和控制每个加热器区域的控制单元；所述方法包括：
在所述基板上第一组预定位置上测量蚀刻前关键器件参数；
将来自先前被蚀刻的基板上的所述蚀刻前关键器件参数和蚀刻后关键器件参数中的至少一个传输到所述等离子体蚀刻系统；
随后将所述基板支承在所述基板支承组件上；
传输处理配方参数中的至少一个到所述等离子体蚀刻系统和将来自存储器的处理配方参数载入到所述等离子体蚀刻系统；
基于所述处理配方参数、目标蚀刻后关键器件参数、所述蚀刻前关键器件参数和所述蚀刻后关键器件参数中的至少一个来推断所述基板上的第二组预定位置的目标蚀刻温度；
基于用于所述加热器区域中的每个的加热器功率和所述第二组预定位置的预定蚀刻温度之间的关系来确定所述可控加热器区域的加热器功率设定值，其中确定所述加热器功率设定值，以便通过最优技术使所述预定蚀刻温度和所述目标蚀刻温度之间的差异被减到最小；
等离子体蚀刻所述基板。
11.如权利要求10所述的方法，其中所述优化技术是最小二乘优化。
12.如权利要求10所述的方法，其中推断出目标蚀刻温度包括基于所述第一组预定位置的所述蚀刻前或者蚀刻后关键器件参数的数据估测所述第二组预定位置的蚀刻前或者蚀刻后关键器件参数的数据。
13.如权利要求12所述的方法，其中所述估测包括基于所述第二组预定位置的所述蚀刻前或者蚀刻后关键器件参数的数据，插入所述第二组预定位置的所述蚀刻前或者蚀刻后关键器件参数的所述数据。
14.如权利要求10所述的方法，其中所述加热器区域中的每个的加热器功率与所述第二组预定位置的所述预定蚀刻温度之间的关系通过矩阵进行描述。
15.如权利要求13所述的方法，其中所述插入是线性插入。
16.如权利要求13所述的方法，其中所述插入是非线性插入。
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