JP5111030B2 - 基板処理システムに用いられる耐浸食性絶縁層を有する温度制御された基板ホルダ - Google Patents
基板処理システムに用いられる耐浸食性絶縁層を有する温度制御された基板ホルダ Download PDFInfo
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- JP5111030B2 JP5111030B2 JP2007238090A JP2007238090A JP5111030B2 JP 5111030 B2 JP5111030 B2 JP 5111030B2 JP 2007238090 A JP2007238090 A JP 2007238090A JP 2007238090 A JP2007238090 A JP 2007238090A JP 5111030 B2 JP5111030 B2 JP 5111030B2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D5/00—Supports, screens, or the like for the charge within the furnace
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D19/00—Arrangements of controlling devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Chemical Vapour Deposition (AREA)
Description
ここではKP、KD、KIは定数で、本明細書ではPIDパラメータの組と呼ぶ。制御アルゴリズムに係る設計上の課題は、温度制御システムの所望の特性を実現するPIDパラメータの組を選択することである。
10 プロセスツール
20 基板ホルダ
25 基板
55 制御装置
100 基板ホルダ
110 基板
120 温度制御された支持体基盤
130 基盤支持体
140 断熱材
200 基板ホルダ
210 基板
220 温度制御された支持体基盤
330 基盤支持体
240 断熱材
300 基板ホルダ
310 基板
320 温度制御された支持体基盤
330 基盤支持体
340 断熱材
342 隆線
344 中心領域
346 周辺領域
400 基板ホルダ
410 基板
420 温度制御された支持体基盤
421 冷却素子
422 冷却素子制御ユニット
430 基盤支持体
431 加熱素子
432 加熱素子制御ユニット
434 高電圧DC電圧供給体
435 クランプ電極
436 背面ガス供給システム
440 断熱材
450 制御装置
460 温度監視システム
462 温度センサ
500 基板ホルダ
510 基板
520 温度制御された支持体基盤
521 冷却素子
522 冷却素子制御ユニット
530 基盤支持体
531 端部加熱素子
532 加熱素子制御ユニット
533 中央加熱素子
534 高電圧DC電圧供給体
535 クランプ電極
536 背面ガス供給システム
540 断熱材
550 制御装置
560 温度監視システム
562 中央温度センサ
564 端部温度センサ
600 温度
601 温度
602 温度
603 温度
620 温度オフセット
622 第1時間間隔
624 第2時間間隔
700 プロセス方法
710 工程
720 工程
730 工程
Claims (23)
- プロセスシステム中の基板を支持する基板ホルダであって:
第1温度を有する温度制御された支持体基盤;
前記温度制御された支持体基盤に対向し、前記基板を支持するように備えられた基板支持体;
前記基板支持体と結合し、該基板支持体を前記第1温度よりも高い第2温度に加熱するように備えられた1以上の加熱素子;及び
前記温度制御された支持体基盤と前記基板支持体との間に設けられているハロゲン含有ガスの腐食に対して耐性を示す耐浸食性断熱材であって、前記温度制御された支持体基盤を前記基板支持体へ結合させるように機能し、かつハロゲン含有ガスの腐食に対して耐性を示すアクリル型の接着剤を有する耐浸食性断熱材;
を有する基板ホルダ。 - 前記耐浸食性断熱材がアクリル系材料又はアクリラート系材料を有する、請求項1に記載の基板ホルダ。
- 前記耐浸食性断熱材が、SF6を有するクリーニング用化学物質、若しくはSF6及びO2を有するクリーニング用化学物質又はこれら両方による浸食に対して耐性を有するように備えられている、請求項1に記載の基板ホルダ。
- 前記耐浸食性断熱材が、集束リングにより生じる前記基板の端部領域での加熱に対抗するように、前記温度制御された支持体基盤と前記基板支持体との間に設けられた状態で、不均一な空間変化をする伝熱係数(W/m2−K)を有する、請求項1に記載の基板ホルダ。
- 前記伝熱係数が、前記耐浸食性断熱材の中心領域と、前記耐浸食性断熱材の端部領域との間で、半径方向に変化する、請求項4に記載の基板ホルダ。
- 前記耐浸食性断熱材の熱伝導率が、不均一に空間変化する、請求項4に記載の基板ホルダ。
- 前記熱伝導率が、前記耐浸食性断熱材の中心領域から端部領域の間で、半径方向に変化する、請求項6に記載の基板ホルダ。
- 前記熱伝導率が、0.2W/m−Kから0.8W/m−Kである第1値から、0.2W/m−Kから0.8W/m−Kである第2値までの範囲で変化する、請求項7に記載の基板ホルダ。
- 前記耐浸食性断熱材の中心領域での前記熱伝導率が、0.2W/m−Kで、かつ、
前記耐浸食性断熱材の端部領域での前記熱伝導率は、0.8W/m−Kである、
請求項7に記載の基板ホルダ。 - 前記の熱伝導率の変化が、前記耐浸食性断熱材の半径方向に中間な領域と、前記耐浸食性断熱材の周辺領域との間で生じる、請求項7に記載の基板ホルダ。
- 前記耐浸食性断熱材の厚さが均一である、請求項7に記載の基板ホルダ。
- 前記耐浸食性断熱材が、前記耐浸食性断熱材の厚さの不均一な空間変化を有する、請求項4に記載の基板ホルダ。
- 前記耐浸食性断熱材が、該耐浸食性断熱材の端部領域でよりも前記耐浸食性断熱材の中心領域で薄い、請求項12に記載の基板ホルダ。
- 前記の耐浸食性断熱材の熱伝導率が均一である、請求項12に記載の基板ホルダ。
- 前記1以上の加熱素子が、前記基板支持体内部に埋め込まれている、請求項1に記載の基板ホルダ。
- 前記1以上の加熱素子が、1以上の抵抗加熱素子、若しくは1以上の熱電素子又はこれら両方を有する、請求項1に記載の基板ホルダ。
- 前記1以上の加熱素子が、前記耐浸食性断熱材の中心領域に位置する第1加熱素子、及び前記耐浸食性断熱材の端部領域に位置する第2加熱素子を有する、請求項1に記載の基板ホルダ。
- 前記基板支持体が前記基板支持体内部に埋め込まれたクランプ電極を有し、
前記クランプ電極は前記基板を前記基板支持体へ電気的に固定するように備えられている、
請求項1に記載の基板ホルダ。 - 前記クランプ電極及び前記1以上の加熱素子が、前記基板支持体内部に埋め込まれている、請求項18に記載の基板ホルダ。
- 前記クランプ電極及び前記1以上の加熱素子が、同一面内に存在する、請求項19に記載の基板ホルダ。
- 前記クランプ電極及び前記1以上の加熱素子が、それぞれ別な面内に存在する、請求項19に記載の基板ホルダ。
- 前記クランプ電極及び前記1以上の加熱素子が、同一の物理電極を有する、請求項19に記載の基板ホルダ。
- 前記基板支持体が前記基板支持体の上側面に1以上の開口部を有し、
前記1以上の開口部を介して、伝熱ガスは前記基板背面へ供給することが可能である、
請求項18に記載の基板ホルダ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/525,818 US7838800B2 (en) | 2006-09-25 | 2006-09-25 | Temperature controlled substrate holder having erosion resistant insulating layer for a substrate processing system |
US11/525,818 | 2006-09-25 |
Publications (2)
Publication Number | Publication Date |
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JP2008085329A JP2008085329A (ja) | 2008-04-10 |
JP5111030B2 true JP5111030B2 (ja) | 2012-12-26 |
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JP2007238090A Expired - Fee Related JP5111030B2 (ja) | 2006-09-25 | 2007-09-13 | 基板処理システムに用いられる耐浸食性絶縁層を有する温度制御された基板ホルダ |
Country Status (4)
Country | Link |
---|---|
US (2) | US7838800B2 (ja) |
JP (1) | JP5111030B2 (ja) |
KR (1) | KR101421720B1 (ja) |
CN (1) | CN101154612B (ja) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
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US7723648B2 (en) * | 2006-09-25 | 2010-05-25 | Tokyo Electron Limited | Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system |
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CN101154612A (zh) | 2008-04-02 |
JP2008085329A (ja) | 2008-04-10 |
KR101421720B1 (ko) | 2014-07-30 |
US20110011845A1 (en) | 2011-01-20 |
US20080083724A1 (en) | 2008-04-10 |
KR20080027747A (ko) | 2008-03-28 |
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