CN102652352A - 调节基板温度来改进关键尺寸（cd）的均匀性 - Google Patents

调节基板温度来改进关键尺寸（cd）的均匀性 Download PDF

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CN102652352A
CN102652352A CN2010800559951A CN201080055995A CN102652352A CN 102652352 A CN102652352 A CN 102652352A CN 2010800559951 A CN2010800559951 A CN 2010800559951A CN 201080055995 A CN201080055995 A CN 201080055995A CN 102652352 A CN102652352 A CN 102652352A
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基思·威廉·加夫
哈米特·辛格
基思·科门丹特
瓦希德·瓦赫迪
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Abstract

一种具有带有多个独立可控加热器区域的基板支承组件的等离子体蚀刻系统。该等离子体蚀刻系统被配置用来控制预定位置的蚀刻温度，以便可以补偿关键器件参数蚀刻前和蚀刻后的不均匀性。

Description

调节基板温度来改进关键尺寸(CD)的均匀性
相关申请
本申请根据U.S.C.§119主张2009年12月15日提交的，美国临时申请号为No.61/286,653的优先权，通过引用将该临时申请的整体内容并入本申请中。
背景技术
随着各种后续的半导体技术的产生，例如晶片等基板的直径趋于增大而晶体管尺寸变小，导致在基板处理中需要更高程度的精度和可重复性。半导体基板材料，例如硅基板，由包括使用真空室在内的技术来处理。这些技术既包括电子束沉积等非等离子体的应用，也包括溅射沉积法、等离子体增强化学气相沉积法（PECVD）、抗蚀剂剥离和等离子体蚀刻等等离子体的应用。
今天可用的等离子体蚀刻系统属于那些对改进精度和可重复性有着日益增强的需求的半导体制造工具。用于等离子体蚀刻系统的一个度量标准为均匀性的提高，其包括在半导体基板表面上的处理结果的均匀性以及通过额定相同输入参数处理的一系列基板的处理结果的均匀性。基板上均匀性的连续提高是可以期望的。除此之外，这还需要具有改进的均匀性、一致性和自我诊断的等离子体室。
发明内容
此处公开的是一种利用等离子体蚀刻系统的方法，该系统包括在等离子体蚀刻过程中支承基板的基板支承组件，该基板支承组件包括多个排列在基板上的器件管芯位置（device die locations）下的独立可控加热器区域和控制每个加热器区域的控制单元。该方法包括（a）在基板上的基板器件管芯位置测量先前已蚀刻的基板的蚀刻前或蚀刻后的关键器件参数；（b）将蚀刻前和蚀刻后的关键器件参数传输到等离子体蚀刻系统；（c）其后将基板支承在基板支承组件上；（d）将处理配方参数传输到等离子体蚀刻系统和/或将存储器中的处理配方参数载入等离子体蚀刻系统；（e）根据处理配方参数输入基板的目标蚀刻后的关键器件参数数据和蚀刻前的关键器件参数，和/或者先前已蚀刻的基板的蚀刻后的关键器件参数来推断在基板上预定位置上的目标蚀刻温度；（f）通过应用可控的加热器区域，以预定位置上的目标蚀刻温度为依据调节每一预定位置的温度；和（g）等离子体蚀刻基板。
具体实施方式
在半导体处理装置中，控制径向或方位角基板温度以实现在基板上的目标关键尺寸（CD）均匀性正变得越来越需要。即使温度的很小变化也会影响CD到不可接受的程度，特别当在半导体制造过程中CD靠近亚-20nm（sub-20nm）时。
在处理过程中，基板支承组件可以被配置成具有各种功能，例如支承基板、调整基板温度、提供射频功率。基板支承组件可以包括在处理过程中用来将基板通过静电夹持到基板支承组件上的静电夹头（ESC）。该ESC可以是可调静电夹头（T-ESC）。T-ESC在共同受让的美国专利号6,847,014和6,921,724中有描述，通过引用将这些专利并入本申请中。基板支承组件可以包括陶瓷基板支托器、流体冷却散热器（以下称为冷却板）以及多个同轴加热区域以逐步实现径向温度控制。通常，冷却板被保持在0℃到30℃之间。加热器设置在冷却板上，在它们之间具有隔热层。加热器可以将基板支承组件的支承表面维持在高于冷却板温度大约0℃到80℃的温度。通过改变在多个加热器区域内的加热功率，基板支承温度轮廓分布可以在中心区变热、中心区变冷和均匀之间发生变化。更进一步，平均基板支承温度在高于冷却板温度大约0℃到80℃的操作范围内逐渐地变化。当CD随着半导体技术的进步而下降时，小方位角温度变量带来日益加剧的更大的挑战。
由于各种原因，控制温度不是容易的事情。首先，许多因素可以影响热传递，例如热源和散热器的位置，介质的运动、材料和形状。第二，热传递是动态过程。除非相关系统处于热平衡，否则将发生热传递，并且温度轮廓和热传递将随着时间变化。第三，非平衡现象，例如等离子体，其当然总是存在于等离子体处理过程中，使得任何实际等离子体处理装置的热传递性能的理论预期即使可能的话，也是非常困难的。
在等离子体处理装置中，基板温度轮廓受到许多因素的影响，例如等离子体密度轮廓、RF功率轮廓、在夹具中的各种加热冷却元件的细节结构，因此基板温度轮廓通常不是均匀的并且难以用少量的加热或冷却元件来控制。该缺陷转变为在跨过整个基板的处理速率方面的非均匀性和在基板上的器件管的关键尺寸方面的非均匀性。
关键尺寸方面的非均匀性可以由上游的工艺流程引起，例如，光刻。由于光刻的平行特征（例如在基板上所有器件管芯同时暴露）和因素很难控制，例如光源不均匀性，光掩膜上的衍射，温度的不均匀性，光刻胶厚度的不均匀性等，使得光刻后和蚀刻前的基板在器件特征上通常有不均匀性。如果未经检查并让其传递到下游的工艺流程，这种不均匀性可以导致减少器件产量。
在基板支承组件中设置多个独立可控的加热器区域以使得等离子体蚀刻系统能够有效产生并且保持既定的空间和时间温度轮廓，并且能够补偿影响CD均匀性的其他不利因素，这将是有利的和可取的。
带有独立受控的加热器区域的基板支承组件在2009年10月21日提交的美国专利申请号12/582,991中被公开，通过引用将这些专利并入本申请中。
本文描述的是运用等离子体蚀刻系统的方法，该系统有带有多个独立可控的加热器区域的基板支承组件，该方法在蚀刻过程中，通过测量基板上多个器件管芯位置上的蚀刻前关键器件参数或者先前已被蚀刻的基板的蚀刻后关键器件参数，并且运用已测量的信息调节基板上预定位置上的温度，从而补偿将要蚀刻的基板的不均匀性。
例如，在基板经过平板印刷之后，在基板的抗蚀层上形成图案。抗蚀层上的图案的关键尺寸处可能有不均匀性。基板上每个器件管芯上的抗蚀层内的蚀刻前关键尺寸可以用合适的工具来测量。在下部的后续的基板的等离子体蚀刻中图案化抗蚀层被用来作为掩膜。等离子体蚀刻过程的温度可以影响基板上被蚀刻的图案的关键尺寸（蚀刻后关键尺寸）。如果在器件管芯位置上的蚀刻前关键尺寸确定会下降到目标值的可容忍误差之外，可以通过加热器区域调整器件管芯位置上的蚀刻温度以使得蚀刻后的关键尺寸在目标值可容忍误差之内。因此，经过测量的蚀刻前关键尺寸可以用来调整每个器件管芯位置上的蚀刻温度，以补偿器件管芯位置上蚀刻前关键尺寸内特定数量的误差。
等离子体蚀刻系统可以有组装在加热板中的独立的可控的加热器区域以及控制每个加热器区域的控制单元。在控制单元的控制下，通过调整每个加热器区域的功率，处理过程中的温度轮廓可以径向和按方位角定型。该加热器区域优选地设置在限定图案中，例如，矩形网格、六边形网格或者其他图案。加热板的每个加热器区域与基板上的单个器件管芯优选有相似的尺寸（例如±10%）。在典型的装置中，为了减少电线接头的数量，电源供应线和电源返回线设置为，每个电源供应线连接到不同组的加热器区域，并且每个电源返回线连接到不同组的加热器区域，其中每个加热器区域处于连接到特定电源供应线的组中的一个中以及处于连接到特定电源返回线的组中的一个中。两个加热器区域不连接到相同对的电源供应线和电源返回线。因此，加热器区域可以通过引导电流经过一对电源供应线和电源返回线连接到特定的加热器区域上来触发。加热器元件的功率优选地小于20W，更优选地为5W到10W。加热器元件可以是佩尔蒂埃（Peltier）器件和/或电阻加热器，例如聚酰亚胺加热器、硅橡胶加热器、云母加热器、金属加热器（例如，W、Ni/Cr合金、Mo或Ta）、陶瓷加热器（例如，WC）、半导体加热器或碳加热器。加热器元件可以是网印、线绕或蚀刻箔加热器。加热器元件的厚度范围可以为2微米到1毫米，优选为5-80微米。为了提供在加热器区域和/或电源供应线与电源返回线之间的空间，加热器区域的总面积可以上至基板支承组件的上表面面积的90%，例如该面积的50-90%。电源供应线或电源返回线（总称电源线）可以设置在加热器区域之间的范围从1到10mm的间隙里，或者设置在通过电绝缘层与加热器区域隔离的分离平面中。电源供应线和电源返回线优选地制作为与空间容许的一样宽，以便输送大的电流并且减少焦耳热。电源线可以处于与加热器区域相同的平面中，也可以处于与加热器区域不同的平面中。电源供应线和电源返回线的材料可以与加热器元件的材料相同或不同。优选地，电源供应线和电源返回线的材料是具有低阻抗的材料，例如Cu、Al、W、
Figure BDA00001747981800051
或Mo。基板支承组件可操作以控制基板温度，并且因此控制每一器件管芯位置上的等离子体蚀刻过程，从而使基板上的器件产量达到最大化。等离子体蚀刻系统优选有9个加热器区域。
在一个实施例中，等离子体蚀刻系统可以从例如人类使用者、机载测量工具、主机网络（在处理线内的处理工具间分享数据的网络）等源头，接收在将在系统中处理的基板上的多个器件管芯位置（优选在每个器件管芯位置上的至少一个位置）测得的关键器件参数（例如蚀刻前关键尺寸）。优选地，等离子体蚀刻系统可以通过主机通讯网络从脱机（off-board）检查工具接收批量的将被处理的基板的蚀刻前关键器件参数。这种脱机检查工具可以是光的和/或者电子束检查工具。等离子体蚀刻系统可以有软件和/或硬件接口来接收蚀刻前关键器件参数。等离子体蚀刻系统可以有合适的软件来处理蚀刻前关键器件参数。
等离子体蚀刻系统也可以通过硬件和/或软件接口接收和/或通过存储器载入处理配方参数，该处理配方参数定义了目标蚀刻后关键器件参数与已测量的蚀刻前关键器件参数和蚀刻温度的相关性；并且根据处理配方参数、目标蚀刻后关键器件参数和测得的蚀刻前关键器件参数来推断在基板上预定的位置上的目标蚀刻温度。优选地，对于每一处理配方阶段，等离子体蚀刻系统可以接收这样的处理配方参数。
优选地，等离子体蚀刻系统可以基于每个器件管芯位置的目标蚀刻温度，进一步计算用于每一个加热器区域的目标控制参数（可以直接被控制的参数，例如功率，电压，电流等），以便为每一个器件管芯获得目标关键器件参数。
在基板支承组件生产过程中，通过测量基板支承组件的表面温度对应用到其上的不同控制参数的响应，可以获得目标控制参数。可替代地，目标控制参数可以运用例如热转移理论或者有限元分析等理论的或者经验的模型来确定。
优选地，通过每个器件管芯位置对适用于底部加热器区域的可控参数的直接响应以及通过所述器件管芯对适用于其他加热器区域可控参数的间接响应(串扰)，稳态增益矩阵可以被用来计算目标控制参数。运用G.Golub等人的《矩阵计算》(约翰斯·霍普金斯大学出版，波士顿，1996)中描述的方法可以计算出稳态增益矩阵，通过引用将该整体内容并入本申请中。
在一个实施例中，假设等离子体蚀刻系统有n独立的加热器区域。它们各自的控制参数为Xi(i＝1，2，...，n)。所有的控制参数Xi可以写成以下矢量：
X = X 1 X 2 . . . X n ,
其中Xi优选是适用于第i个加热器区域的时间平均功率。
Ti是第i个加热器区域内的器件管芯位置上的目标蚀刻温度，可以写成另外一种矢量：
T = T 1 T 2 . . . T n ,
矢量T是矢量X的函数。矢量X和T之间的关系可以通过n*n阶矩阵K来描述，其中T＝K·X。在基板支承组件或者等离子体蚀刻系统生产过程中，对角线的要素Kii可以被测量。在基板支承组件或者等离子体蚀刻系统生产过程中，非对角线的要素Kij(i≠j)可以被测量，或者从有限元热模型、对角要素的值和第i个和第j个加热器区域之间的物理距离的值推导出来。矩阵K被存储在等离子体蚀刻系统内。等离子体蚀刻系统也有软件或者固件，该软件或者固件能用于执行基于T推导x的算法。该算法是逆矩阵再乘以矩阵，即X＝K-1·T。
在另外的实施例中，假设等离子体蚀刻系统有n个独立的加热器区域。它们各自的控制参数为Xi(i＝1，2，...，n)。所有的控制参数Xi可以写成以下矢量：
X = X 1 X 2 . . . X n ,
其中Xi优选是适用于第i个加热器区域的时间平均功率。
P＝{Pj}是基板上预定位置已断定的蚀刻温度的集合，在基板上响应于每一个加热器区域的温度基于现有的模型或者标准尺寸是已知的。P可以写成另外一种矢量：
P = P 1 P 2 . . . Pm ,
T＝{Tj}是基板上相同的预定位置目标蚀刻温度的集合。T可以写成以下矢量：
T = T 1 T 2 . . . Tm ,
在该实施例中，有各自目标蚀刻温度的基板上的位置的数量m与加热器区域的数量是不相等的，例如m≠n。有温度响应的位置可以与加热器区域的位置不同。矢量P是矢量X的函数。矢量P和T之间的关系可以通过m*n阶矩阵K来描述，其中P＝K·X。在基板支承组件或者等离子体蚀刻系统生产过程中，要素Kij可以被测量或者从限定元热模型被推导出来。矩阵K被存储在等离子体蚀刻系统内。通过运用矩阵或者最优化的计算程序，例如最小二乘优化，等离子体蚀刻系统也有软件或者固件，该软件和固件能用于执行算法，以根据T，使用矩阵和优化算法（例如最小二乘优化）来推导出X。通过将器件管芯位置的预定温度与基板上各自位置的目标温度之间的差异最小化，优化算法简化了加热器功率设定值（setpoint）的计算。
在以上的实施例中，测量诸如CD值等基板特征的位置可以根据加热器区域的数量而变化。另外，测量基板特征的位置，与基于例如在生产期间的模型或者之前的测量而已知的每个加热器区域的温度响应的位置不一致。更确切地说，基板特征测量位置与用于构建矩阵K的位置是不同的。因此，与用于构建矩阵K的相同的位置，基板特性需要被估算。在优选的实施例中，可以使用例如线性插值或者非线性插值之类技术将例如CD值等为基板特征数据从基板特性测量位置转变到在校准过程中已模式化或者已测得个别加热器响应的位置，该位置即构建矩阵K的位置。
在可替代的实施例中，控制参数可以通过控制电路（例如一个PID控制器），基于每一个加热器区域的温度传感器(例如光传感器，热耦合器，二极管等)的输出而动态地确定。
虽然已经参考其中的具体实施例详细地描述了运用等离子体蚀刻系统的方法，但是对于本领域的技术人员而言，显而易见，在不脱离所附权利要求的范围的情况下，可以作出各种改变和修改，以及使用等同方案。

Claims (16)

1.一种运用等离子体蚀刻系统的方法，所述等离子体蚀刻系统包括在等离子体蚀刻过程中支承基板的基板支承组件，该基板支承组件包括多个排列在所述基板上的器件管芯位置下的独立可控加热器区域和控制每个加热器区域的控制单元；所述方法包括：
在所述基板上的多个器件管芯位置上测量蚀刻前关键器件参数；
将来自先前被蚀刻的基板上的所述蚀刻前关键器件参数和蚀刻后关键器件参数中的至少一个传输到所述等离子体蚀刻系统；
随后将所述基板支承在所述基板支承组件上；
将处理配方参数传输到所述等离子体蚀刻系统和/或者将来自存储器的处理配方参数传输到所述等离子体蚀刻系统；
通过所述处理配方参数、目标蚀刻后关键器件参数，所述蚀刻前关键器件参数和所述蚀刻后关键器件参数中的至少一个推断出所述基板上预定位置的目标蚀刻温度；
运用所述可控的加热器区域将每个器件管芯位置的温度调节到其目标蚀刻温度；和
等离子体蚀刻所述基板。
2.如权利要求1所述的方法，还包括针对蚀刻处理方案的每一步将处理配方参数传输到所述等离子体蚀刻系统和/或将来自存储器处理配方参数载入到所述等离子体蚀刻系统。
3.如权利要求1所述的方法，还包括基于所述基板上的所述预定位置的所述目标蚀刻温度，传输和/或计算每个加热器区域的目标控制参数。
4.如权利要求1所述的方法，其中当所述加热器区域的数量和所述器件管芯位置的数量相等时，运用所述可控制的加热器区域调节温度的步骤包括：
通过将描述所述加热器区域的所述目标控制参数和所述器件管芯位置的所述目标蚀刻温度之间的关系的逆矩阵乘以其元素为所述器件管芯位置的所述目标蚀刻温度的矢量来确定所述加热器区域的加热器功率设定值。
5.如权利要求1所述的方法，其中所述等离子体蚀刻系统包括被配置用来测量每个加热器区域位置的蚀刻温度的一个或者更多个的温度感应器，所述方法还包括基于温度感应器的输出计算每个加热器区域的目标控制参数。
6.实施如权利要求1所述方法的等离子体蚀刻系统，包括在等离子体蚀刻过程中用来支承基板的基板支承组件，该基板支承组件包括排列在所述基板下的多个独立可控加热器区域和控制每个加热器区域的控制单元。
7.如权利要求6所述的实施所述方法的所述等离子体蚀刻系统，包括通过主机通讯网络的脱机检查工具接收所述蚀刻前或所述蚀刻后关键器件参数的接口。
8.如权利要求1所述的方法，其中当所述加热器区域的数量和所述器件管芯位置的数量不相等时，运用所述可控制的加热器区域调节温度的步骤包括：
基于描述所述加热器区域的所述目标控制参数和所述基板上的所述预定位置的预定蚀刻温度之间的关系的矩阵，来确定所述加热器区域的加热器功率设定值，
其中所述器件管芯位置的所述预定蚀刻温度和所述器件管芯位置的所述目标蚀刻温度之间的差异通过优化技术被减到最小。
9.如权利要求8所述的方法，其中所述优化技术是最小二乘优化。
10.运用等离子体蚀刻系统的方法，所述等离子体蚀刻系统包括在等离子体蚀刻过程中用于支承基板的基板支承组件，所述基板支承组件包括多个排列在基板上的器件管芯位置下的独立可控加热器区域和控制每个加热器区域的控制单元；所述方法包括：
在所述基板上第一组预定位置上测量蚀刻前关键器件参数；
将来自先前被蚀刻的基板上的所述蚀刻前关键器件参数和蚀刻后关键器件参数中的至少一个传输到所述等离子体蚀刻系统；
随后将所述基板支承在所述基板支承组件上；
传输处理配方参数中的至少一个到所述等离子体蚀刻系统和将来自存储器的处理配方参数载入到所述等离子体蚀刻系统；
基于所述处理配方参数、目标蚀刻后关键器件参数、所述蚀刻前关键器件参数和所述蚀刻后关键器件参数中的至少一个来推断所述基板上的第二组预定位置的目标蚀刻温度；
基于用于所述加热器区域中的每个的加热器功率和所述第二组预定位置的预定蚀刻温度之间的关系来确定所述可控加热器区域的加热器功率设定值，其中确定所述加热器功率设定值，以便通过最优技术使所述预定蚀刻温度和所述目标蚀刻温度之间的差异被减到最小；
等离子体蚀刻所述基板。
11.如权利要求10所述的方法，其中所述优化技术是最小二乘优化。
12.如权利要求10所述的方法，其中推断出目标蚀刻温度包括基于所述第一组预定位置的所述蚀刻前或者蚀刻后关键器件参数的数据估测所述第二组预定位置的蚀刻前或者蚀刻后关键器件参数的数据。
13.如权利要求12所述的方法，其中所述估测包括基于所述第二组预定位置的所述蚀刻前或者蚀刻后关键器件参数的数据，插入所述第二组预定位置的所述蚀刻前或者蚀刻后关键器件参数的所述数据。
14.如权利要求10所述的方法，其中所述加热器区域中的每个的加热器功率与所述第二组预定位置的所述预定蚀刻温度之间的关系通过矩阵进行描述。
15.如权利要求13所述的方法，其中所述插入是线性插入。
16.如权利要求13所述的方法，其中所述插入是非线性插入。
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103854947A (zh) * 2012-11-30 2014-06-11 朗姆研究公司 用于带有热控元件阵列的esc的功率切换系统
CN105408993A (zh) * 2013-08-06 2016-03-16 应用材料公司 局部加热的多区域基板支撑件
US10056225B2 (en) 2009-12-15 2018-08-21 Lam Research Corporation Adjusting substrate temperature to improve CD uniformity
CN109473381A (zh) * 2018-10-31 2019-03-15 上海华力微电子有限公司 湿法刻蚀清洗设备和方法
CN114127904A (zh) * 2019-07-18 2022-03-01 应用材料公司 半导体制造中基于多区加热器模型的控制

Families Citing this family (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8637794B2 (en) 2009-10-21 2014-01-28 Lam Research Corporation Heating plate with planar heating zones for semiconductor processing
US8791392B2 (en) 2010-10-22 2014-07-29 Lam Research Corporation Methods of fault detection for multiplexed heater array
US8546732B2 (en) 2010-11-10 2013-10-01 Lam Research Corporation Heating plate with planar heater zones for semiconductor processing
US9307578B2 (en) 2011-08-17 2016-04-05 Lam Research Corporation System and method for monitoring temperatures of and controlling multiplexed heater array
BR112014004911A2 (pt) * 2011-08-30 2017-05-30 Watlow Electric Mfg sistema de matriz térmica
US10388493B2 (en) 2011-09-16 2019-08-20 Lam Research Corporation Component of a substrate support assembly producing localized magnetic fields
US8624168B2 (en) 2011-09-20 2014-01-07 Lam Research Corporation Heating plate with diode planar heater zones for semiconductor processing
US8461674B2 (en) 2011-09-21 2013-06-11 Lam Research Corporation Thermal plate with planar thermal zones for semiconductor processing
US9324589B2 (en) 2012-02-28 2016-04-26 Lam Research Corporation Multiplexed heater array using AC drive for semiconductor processing
US8809747B2 (en) * 2012-04-13 2014-08-19 Lam Research Corporation Current peak spreading schemes for multiplexed heated array
US8852964B2 (en) * 2013-02-04 2014-10-07 Lam Research Corporation Controlling CD and CD uniformity with trim time and temperature on a wafer by wafer basis
JP6100672B2 (ja) 2013-10-25 2017-03-22 東京エレクトロン株式会社 温度制御機構、温度制御方法及び基板処理装置
TW201518538A (zh) 2013-11-11 2015-05-16 Applied Materials Inc 像素化冷卻溫度控制的基板支撐組件
US10217615B2 (en) 2013-12-16 2019-02-26 Lam Research Corporation Plasma processing apparatus and component thereof including an optical fiber for determining a temperature thereof
US9716022B2 (en) 2013-12-17 2017-07-25 Lam Research Corporation Method of determining thermal stability of a substrate support assembly
US9435692B2 (en) 2014-02-05 2016-09-06 Lam Research Corporation Calculating power input to an array of thermal control elements to achieve a two-dimensional temperature output
US11158526B2 (en) 2014-02-07 2021-10-26 Applied Materials, Inc. Temperature controlled substrate support assembly
US9589853B2 (en) 2014-02-28 2017-03-07 Lam Research Corporation Method of planarizing an upper surface of a semiconductor substrate in a plasma etch chamber
US9472410B2 (en) 2014-03-05 2016-10-18 Applied Materials, Inc. Pixelated capacitance controlled ESC
TWI499925B (zh) * 2014-04-23 2015-09-11 Cheng Uei Prec Ind Co Ltd 連接器尺寸優化系統及方法
US9543171B2 (en) * 2014-06-17 2017-01-10 Lam Research Corporation Auto-correction of malfunctioning thermal control element in a temperature control plate of a semiconductor substrate support assembly that includes deactivating the malfunctioning thermal control element and modifying a power level of at least one functioning thermal control element
US20160240366A1 (en) * 2015-02-17 2016-08-18 Infineon Technologies Ag Processing of Semiconductor Devices
WO2016190905A1 (en) 2015-05-22 2016-12-01 Applied Materials, Inc. Azimuthally tunable multi-zone electrostatic chuck
US9864361B2 (en) 2015-06-22 2018-01-09 Lam Research Corporation Flexible temperature compensation systems and methods for substrate processing systems
US10381248B2 (en) * 2015-06-22 2019-08-13 Lam Research Corporation Auto-correction of electrostatic chuck temperature non-uniformity
US10763142B2 (en) 2015-06-22 2020-09-01 Lam Research Corporation System and method for determining field non-uniformities of a wafer processing chamber using a wafer processing parameter
US10386821B2 (en) 2015-06-22 2019-08-20 Lam Research Corporation Systems and methods for calibrating scalar field contribution values for a limited number of sensors including a temperature value of an electrostatic chuck and estimating temperature distribution profiles based on calibrated values
US9779974B2 (en) 2015-06-22 2017-10-03 Lam Research Corporation System and method for reducing temperature transition in an electrostatic chuck
US10690414B2 (en) 2015-12-11 2020-06-23 Lam Research Corporation Multi-plane heater for semiconductor substrate support
US11069545B2 (en) * 2017-01-19 2021-07-20 Tokyo Electron Limited Substrate processing apparatus, temperature control method, and temperature control program
JP6986947B2 (ja) 2017-01-19 2021-12-22 東京エレクトロン株式会社 基板処理装置、温度制御方法及び温度制御プログラム
CN115220311A (zh) 2017-05-05 2022-10-21 Asml荷兰有限公司 用于预测器件制造工艺的良率的方法
WO2019015899A1 (en) 2017-07-17 2019-01-24 Asml Netherlands B.V. APPARATUS AND METHOD FOR DETERMINING INFORMATION
EP3432071A1 (en) 2017-07-17 2019-01-23 ASML Netherlands B.V. Information determining apparatus and method
US11236422B2 (en) * 2017-11-17 2022-02-01 Lam Research Corporation Multi zone substrate support for ALD film property correction and tunability
EP3518040A1 (en) 2018-01-30 2019-07-31 ASML Netherlands B.V. A measurement apparatus and a method for determining a substrate grid
EP3531207A1 (en) 2018-02-27 2019-08-28 ASML Netherlands B.V. Alignment mark positioning in a lithographic process
JP7202972B2 (ja) * 2018-06-29 2023-01-12 東京エレクトロン株式会社 プラズマ処理装置、プラズマ状態検出方法およびプラズマ状態検出プログラム
WO2020010153A1 (en) 2018-07-05 2020-01-09 Lam Research Corporation Dynamic temperature control of substrate support in substrate processing system
CN109117595B (zh) 2018-09-25 2021-06-25 新智数字科技有限公司 一种热负荷预测方法、装置、可读介质及电子设备
WO2020108862A1 (en) 2018-11-26 2020-06-04 Asml Netherlands B.V. Method for determining root causes of events of a semiconductor manufacturing process and for monitoring a semiconductor manufacturing process
EP3705959A1 (en) 2019-03-04 2020-09-09 ASML Netherlands B.V. Method for determining root causes of events of a semiconductor manufacturing process and for monitoring a semiconductor manufacturing process
EP3891558A1 (en) 2018-12-03 2021-10-13 ASML Netherlands B.V. Method to predict yield of a semiconductor manufacturing process
CN113168116B (zh) 2018-12-07 2024-04-16 Asml荷兰有限公司 用于确定影响半导体制造过程中的产率的根本原因的方法
KR102606104B1 (ko) 2019-01-29 2023-11-29 에이에스엠엘 네델란즈 비.브이. 반도체 제조 공정에서의 의사 결정 방법
EP3693795A1 (en) 2019-02-06 2020-08-12 ASML Netherlands B.V. Method for decision making in a semiconductor manufacturing process
WO2021032376A1 (en) 2019-08-20 2021-02-25 Asml Netherlands B.V. Method for controlling a semiconductor manufacturing process
EP3848757A1 (en) 2020-01-13 2021-07-14 ASML Netherlands B.V. Method for controlling a lithographic apparatus
US11809088B2 (en) 2019-08-22 2023-11-07 Asml Netherlands B.V. Method for controlling a lithographic apparatus
EP3910417A1 (en) 2020-05-13 2021-11-17 ASML Netherlands B.V. Method for determining an inspection strategy for a group of substrates in a semiconductor manufacturing process
KR20220147672A (ko) 2020-04-02 2022-11-03 에이에스엠엘 네델란즈 비.브이. 반도체 제조 프로세스에서 기판들의 그룹에 대한 검사 전략을 결정하기 위한 방법
US11493551B2 (en) 2020-06-22 2022-11-08 Advantest Test Solutions, Inc. Integrated test cell using active thermal interposer (ATI) with parallel socket actuation
US20230333485A1 (en) 2020-09-28 2023-10-19 Asml Netherlands B.V. Target structure and associated methods and apparatus
US11549981B2 (en) 2020-10-01 2023-01-10 Advantest Test Solutions, Inc. Thermal solution for massively parallel testing
US11821913B2 (en) 2020-11-02 2023-11-21 Advantest Test Solutions, Inc. Shielded socket and carrier for high-volume test of semiconductor devices
US11808812B2 (en) 2020-11-02 2023-11-07 Advantest Test Solutions, Inc. Passive carrier-based device delivery for slot-based high-volume semiconductor test system
US20220155364A1 (en) 2020-11-19 2022-05-19 Advantest Test Solutions, Inc. Wafer scale active thermal interposer for device testing
US11609266B2 (en) 2020-12-04 2023-03-21 Advantest Test Solutions, Inc. Active thermal interposer device
WO2022135890A1 (en) 2020-12-21 2022-06-30 Asml Netherlands B.V. A method of monitoring a lithographic process
EP4030236A1 (en) 2021-01-18 2022-07-20 ASML Netherlands B.V. A method of monitoring a lithographic process and associated apparatuses
EP4050416A1 (en) 2021-02-25 2022-08-31 ASML Netherlands B.V. Lithographic method
US20240004307A1 (en) 2020-12-24 2024-01-04 Asml Netherlands B.V. Lithographic method
US11573262B2 (en) 2020-12-31 2023-02-07 Advantest Test Solutions, Inc. Multi-input multi-zone thermal control for device testing
EP4036646A1 (en) 2021-01-29 2022-08-03 ASML Netherlands B.V. Metrology methods and appratuses
EP4040233A1 (en) 2021-02-03 2022-08-10 ASML Netherlands B.V. A method of determining a measurement recipe and associated metrology methods and appratuses
EP4050328A1 (en) 2021-02-25 2022-08-31 ASML Netherlands B.V. Method to predict metrology offset of a semiconductor manufacturing process
US11587640B2 (en) 2021-03-08 2023-02-21 Advantest Test Solutions, Inc. Carrier based high volume system level testing of devices with pop structures
EP4113210A1 (en) 2021-07-01 2023-01-04 ASML Netherlands B.V. A method of monitoring a measurement recipe and associated metrology methods and apparatuses
EP4120019A1 (en) 2021-07-12 2023-01-18 ASML Netherlands B.V. Method of determining a correction for at least one control parameter in a semiconductor manufacturing process
KR20240056509A (ko) 2021-09-07 2024-04-30 에이에스엠엘 네델란즈 비.브이. 리소그래피 공정을 모니터링하는 방법 및 관련된 장치
EP4191337A1 (en) 2021-12-01 2023-06-07 ASML Netherlands B.V. A method of monitoring a lithographic process and associated apparatuses
EP4174577A1 (en) 2021-11-01 2023-05-03 ASML Netherlands B.V. Method of determining a performance parameter distribution
US11656273B1 (en) 2021-11-05 2023-05-23 Advantest Test Solutions, Inc. High current device testing apparatus and systems
CN118103947A (zh) 2022-09-26 2024-05-28 株式会社日立高新技术 半导体器件的制造系统以及制造方法
EP4357854A1 (en) 2022-10-20 2024-04-24 ASML Netherlands B.V. Method of predicting a parameter of interest in a semiconductor manufacturing process
US11828795B1 (en) 2022-10-21 2023-11-28 AEM Holdings Ltd. Test system with a thermal head comprising a plurality of adapters for independent thermal control of zones
US11656272B1 (en) 2022-10-21 2023-05-23 AEM Holdings Ltd. Test system with a thermal head comprising a plurality of adapters and one or more cold plates for independent control of zones
US11796589B1 (en) 2022-10-21 2023-10-24 AEM Holdings Ltd. Thermal head for independent control of zones
US11693051B1 (en) 2022-10-21 2023-07-04 AEM Holdings Ltd. Thermal head for independent control of zones
US11828796B1 (en) 2023-05-02 2023-11-28 AEM Holdings Ltd. Integrated heater and temperature measurement
CN116759347B (zh) * 2023-08-17 2023-12-12 浙江求是创芯半导体设备有限公司 外延工艺的控制方法及控制装置、半导体加工设备

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1777974A (zh) * 2003-02-27 2006-05-24 Lam研究有限公司 通过局部晶片温度控制对晶片上的临界尺寸变化的补偿
US20080105669A1 (en) * 2006-11-02 2008-05-08 Tokyo Electron Limited Temperature setting method of thermal processing plate, computer-readable recording medium recording program thereon, and temperature setting apparatus for thermal processing plate
KR20080058109A (ko) * 2006-12-21 2008-06-25 동부일렉트로닉스 주식회사 웨이퍼 가열장치 및 가열방법
CN101243549A (zh) * 2005-08-09 2008-08-13 松下电器产业株式会社 晶片级老化方法以及晶片级老化装置

Family Cites Families (120)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3440883A (en) * 1966-12-01 1969-04-29 Monsanto Co Electronic semiconductor thermometer
US3946370A (en) * 1972-11-02 1976-03-23 U.S. Philips Corporation Method of making light-dot distribution for the holographic storage of binary information with the aid of electronically controlled switching masks
GB1548520A (en) * 1976-08-27 1979-07-18 Tokyo Shibaura Electric Co Method of manufacturing a semiconductor device
JPS601918A (ja) 1983-06-17 1985-01-08 Fuji Electric Co Ltd マトリツクス形選択回路
JPS621176A (ja) 1985-06-26 1987-01-07 Hitachi Ltd ヘツド支持装置
US5536918A (en) * 1991-08-16 1996-07-16 Tokyo Electron Sagami Kabushiki Kaisha Heat treatment apparatus utilizing flat heating elements for treating semiconductor wafers
FR2682253A1 (fr) * 1991-10-07 1993-04-09 Commissariat Energie Atomique Sole chauffante destinee a assurer le chauffage d'un objet dispose a sa surface et reacteur de traitement chimique muni de ladite sole.
US5255520A (en) * 1991-12-20 1993-10-26 Refir Technologies Advanced thermoelectric heating and cooling system
JP3440475B2 (ja) 1992-06-29 2003-08-25 アイシン精機株式会社 人体局部洗浄装置
US5414245A (en) * 1992-08-03 1995-05-09 Hewlett-Packard Corporation Thermal-ink heater array using rectifying material
DE4231702C2 (de) * 1992-09-22 1995-05-24 Litef Gmbh Thermoelektrische, beheizbare Kühlkammer
KR100290748B1 (ko) * 1993-01-29 2001-06-01 히가시 데쓰로 플라즈마 처리장치
US5504471A (en) * 1993-09-16 1996-04-02 Hewlett-Packard Company Passively-multiplexed resistor array
JP3257328B2 (ja) * 1995-03-16 2002-02-18 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
US5667622A (en) * 1995-08-25 1997-09-16 Siemens Aktiengesellschaft In-situ wafer temperature control apparatus for single wafer tools
JPH09213781A (ja) * 1996-02-01 1997-08-15 Tokyo Electron Ltd 載置台構造及びそれを用いた処理装置
US6095084A (en) * 1996-02-02 2000-08-01 Applied Materials, Inc. High density plasma process chamber
US5740016A (en) * 1996-03-29 1998-04-14 Lam Research Corporation Solid state temperature controlled substrate holder
WO1998005060A1 (en) * 1996-07-31 1998-02-05 The Board Of Trustees Of The Leland Stanford Junior University Multizone bake/chill thermal cycling module
KR200159921Y1 (ko) 1996-11-23 1999-11-01 이세원 리프터의 업/다운 제어회로
JP3526184B2 (ja) * 1997-03-17 2004-05-10 大日本スクリーン製造株式会社 基板処理装置
US6730541B2 (en) * 1997-11-20 2004-05-04 Texas Instruments Incorporated Wafer-scale assembly of chip-size packages
US6222161B1 (en) * 1998-01-12 2001-04-24 Tokyo Electron Limited Heat treatment apparatus
US5886866A (en) * 1998-07-06 1999-03-23 Applied Materials, Inc. Electrostatic chuck having a combination electrode structure for substrate chucking, heating and biasing
JP3892609B2 (ja) * 1999-02-16 2007-03-14 株式会社東芝 ホットプレートおよび半導体装置の製造方法
DE19907497C2 (de) * 1999-02-22 2003-05-28 Steag Hamatech Ag Vorrichtung und Verfahren zur Wärmebehandlung von Substraten
US6353209B1 (en) * 1999-03-04 2002-03-05 Board Of Trustees Of The Leland Stanford Junior University Temperature processing module
US6523493B1 (en) * 2000-08-01 2003-02-25 Tokyo Electron Limited Ring-shaped high-density plasma source and method
US6100506A (en) * 1999-07-26 2000-08-08 International Business Machines Corporation Hot plate with in situ surface temperature adjustment
US6175175B1 (en) * 1999-09-10 2001-01-16 The University Of Chicago Levitation pressure and friction losses in superconducting bearings
US6740853B1 (en) * 1999-09-29 2004-05-25 Tokyo Electron Limited Multi-zone resistance heater
EP1199908A4 (en) * 1999-10-22 2003-01-22 Ibiden Co Ltd CERAMIC HEATING PLATE
US6271459B1 (en) * 2000-04-26 2001-08-07 Wafermasters, Inc. Heat management in wafer processing equipment using thermoelectric device
US6403403B1 (en) * 2000-09-12 2002-06-11 The Aerospace Corporation Diode isolated thin film fuel cell array addressing method
US6475336B1 (en) * 2000-10-06 2002-11-05 Lam Research Corporation Electrostatically clamped edge ring for plasma processing
WO2002034451A1 (en) * 2000-10-25 2002-05-02 Tokyo Electron Limited Method of and structure for controlling electrode temperature
US6501052B2 (en) * 2000-12-22 2002-12-31 Chrysalis Technologies Incorporated Aerosol generator having multiple heating zones and methods of use thereof
AU2002240261A1 (en) * 2001-03-02 2002-09-19 Tokyo Electron Limited Method and apparatus for active temperature control of susceptors
US6746616B1 (en) * 2001-03-27 2004-06-08 Advanced Micro Devices, Inc. Method and apparatus for providing etch uniformity using zoned temperature control
US6741446B2 (en) * 2001-03-30 2004-05-25 Lam Research Corporation Vacuum plasma processor and method of operating same
JP3582518B2 (ja) * 2001-04-18 2004-10-27 住友電気工業株式会社 抵抗発熱体回路パターンとそれを用いた基板処理装置
EP1391140B1 (en) * 2001-04-30 2012-10-10 Lam Research Corporation Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support
US20050211385A1 (en) 2001-04-30 2005-09-29 Lam Research Corporation, A Delaware Corporation Method and apparatus for controlling spatial temperature distribution
US6847014B1 (en) * 2001-04-30 2005-01-25 Lam Research Corporation Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support
US6795292B2 (en) * 2001-05-15 2004-09-21 Dennis Grimard Apparatus for regulating temperature of a process kit in a semiconductor wafer-processing chamber
US20060191637A1 (en) 2001-06-21 2006-08-31 John Zajac Etching Apparatus and Process with Thickness and Uniformity Control
US6483690B1 (en) * 2001-06-28 2002-11-19 Lam Research Corporation Ceramic electrostatic chuck assembly and method of making
JP3897563B2 (ja) * 2001-10-24 2007-03-28 日本碍子株式会社 加熱装置
US6739138B2 (en) * 2001-11-26 2004-05-25 Innovations Inc. Thermoelectric modules and a heating and cooling apparatus incorporating same
US6858361B2 (en) * 2002-03-01 2005-02-22 David S. L. Mui Methodology for repeatable post etch CD in a production tool
US6921724B2 (en) * 2002-04-02 2005-07-26 Lam Research Corporation Variable temperature processes for tunable electrostatic chuck
US6612673B1 (en) * 2002-04-29 2003-09-02 Hewlett-Packard Development Company, L.P. System and method for predicting dynamic thermal conditions of an inkjet printing system
JP3808407B2 (ja) * 2002-07-05 2006-08-09 住友大阪セメント株式会社 電極内蔵型サセプタ及びその製造方法
WO2004008503A1 (en) * 2002-07-11 2004-01-22 Temptronic Corporation Workpiece chuck with temperature control assembly having spacers between layers providing clearance for thermoelectric modules
US6825681B2 (en) * 2002-07-19 2004-11-30 Delta Design, Inc. Thermal control of a DUT using a thermal control substrate
US7504006B2 (en) * 2002-08-01 2009-03-17 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering
JP3924524B2 (ja) 2002-10-29 2007-06-06 京セラ株式会社 ウエハ加熱装置およびその製造方法
US7372001B2 (en) * 2002-12-17 2008-05-13 Nhk Spring Co., Ltd. Ceramics heater
US6979805B2 (en) * 2003-01-08 2005-12-27 Hewlett-Packard Development Company, L.P. Fuel-cell resistors and methods
US20040252738A1 (en) * 2003-01-22 2004-12-16 Hill Steven E. Light emitting diodes and planar optical lasers using IV semiconductor nanocrystals
US6825617B2 (en) * 2003-02-27 2004-11-30 Hitachi High-Technologies Corporation Semiconductor processing apparatus
KR100904361B1 (ko) * 2003-03-28 2009-06-23 도쿄엘렉트론가부시키가이샤 기판의 온도제어방법 및 시스템
US20040200574A1 (en) * 2003-04-11 2004-10-14 Applied Materials, Inc. Method for controlling a process for fabricating integrated devices
US6989210B2 (en) * 2003-04-23 2006-01-24 Hewlett-Packard Development Company, L.P. Fuel cartridge with thermo-degradable barrier system
US8974630B2 (en) * 2003-05-07 2015-03-10 Sungkyunkwan University Inductively coupled plasma processing apparatus having internal linear antenna for large area processing
US20050016465A1 (en) * 2003-07-23 2005-01-27 Applied Materials, Inc. Electrostatic chuck having electrode with rounded edge
TWI247551B (en) * 2003-08-12 2006-01-11 Ngk Insulators Ltd Method of manufacturing electrical resistance heating element
JP2005123286A (ja) * 2003-10-15 2005-05-12 Hitachi Kokusai Electric Inc 基板処理装置
JP2005136025A (ja) * 2003-10-29 2005-05-26 Trecenti Technologies Inc 半導体製造装置、半導体装置の製造方法及びウエハステージ
KR20050053464A (ko) 2003-12-01 2005-06-08 정준호 직렬 연결된 2개의 다이오드를 이용한 반도체 기억소자
US20100257871A1 (en) * 2003-12-11 2010-10-14 Rama Venkatasubramanian Thin film thermoelectric devices for power conversion and cooling
US7250309B2 (en) * 2004-01-09 2007-07-31 Applied Materials, Inc. Integrated phase angle and optical critical dimension measurement metrology for feed forward and feedback process control
JP4349952B2 (ja) * 2004-03-24 2009-10-21 京セラ株式会社 ウェハ支持部材とその製造方法
US7141763B2 (en) * 2004-03-26 2006-11-28 Tokyo Electron Limited Method and apparatus for rapid temperature change and control
US20080223521A1 (en) 2004-03-30 2008-09-18 Nam Hun Kim Plasma Source Coil and Plasma Chamber Using the Same
US7697260B2 (en) * 2004-03-31 2010-04-13 Applied Materials, Inc. Detachable electrostatic chuck
JP2005294237A (ja) 2004-04-05 2005-10-20 Aun:Kk 面状ヒーター
JP4281605B2 (ja) * 2004-04-08 2009-06-17 住友電気工業株式会社 半導体加熱装置
US20050229854A1 (en) * 2004-04-15 2005-10-20 Tokyo Electron Limited Method and apparatus for temperature change and control
US7415312B2 (en) * 2004-05-25 2008-08-19 Barnett Jr James R Process module tuning
JP2005347612A (ja) 2004-06-04 2005-12-15 Matsushita Electric Ind Co Ltd ウェハトレイ及びウェハバーンインユニット、それを用いたウェハレベルバーンイン装置並びに半導体ウェハの温度制御方法
KR20050121913A (ko) 2004-06-23 2005-12-28 삼성전자주식회사 베이크 장치
US7396431B2 (en) * 2004-09-30 2008-07-08 Tokyo Electron Limited Plasma processing system for treating a substrate
US20060090855A1 (en) * 2004-10-29 2006-05-04 Tokyo Electron Limited Substrate mounting table, substrate processing apparatus and substrate temperature control method
KR100632544B1 (ko) 2004-12-15 2006-10-09 현대자동차주식회사 직류변환기의 게이트 드라이버 회로
US7475551B2 (en) * 2004-12-23 2009-01-13 Nanocoolers, Inc. System employing temporal integration of thermoelectric action
US20060226123A1 (en) * 2005-04-07 2006-10-12 Applied Materials, Inc. Profile control using selective heating
JP2007081160A (ja) * 2005-09-14 2007-03-29 Fujitsu Ltd 半導体装置の製造方法
JP4483751B2 (ja) 2005-09-16 2010-06-16 株式会社デンソー 電源逆接続保護回路
JP2006074067A (ja) * 2005-11-08 2006-03-16 Hitachi Ltd プラズマ処理装置および処理方法
US20070125762A1 (en) * 2005-12-01 2007-06-07 Applied Materials, Inc. Multi-zone resistive heater
JP2006303514A (ja) * 2006-05-01 2006-11-02 Fujitsu Ltd 静電チャック、成膜方法及びエッチング方法
US8168050B2 (en) * 2006-07-05 2012-05-01 Momentive Performance Materials Inc. Electrode pattern for resistance heating element and wafer processing apparatus
JP4394667B2 (ja) * 2006-08-22 2010-01-06 日本碍子株式会社 ヒータ付き静電チャックの製造方法
US7723648B2 (en) * 2006-09-25 2010-05-25 Tokyo Electron Limited Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system
US7297894B1 (en) * 2006-09-25 2007-11-20 Tokyo Electron Limited Method for multi-step temperature control of a substrate
US7557328B2 (en) * 2006-09-25 2009-07-07 Tokyo Electron Limited High rate method for stable temperature control of a substrate
US7625680B2 (en) * 2006-09-29 2009-12-01 Tokyo Electron Limited Method of real time dynamic CD control
US8222574B2 (en) * 2007-01-15 2012-07-17 Applied Materials, Inc. Temperature measurement and control of wafer support in thermal processing chamber
US7671412B2 (en) * 2007-02-15 2010-03-02 Tokyo Electron Limited Method and device for controlling temperature of a substrate using an internal temperature control device
US20080197015A1 (en) * 2007-02-16 2008-08-21 Terry Bluck Multiple-magnetron sputtering source with plasma confinement
KR100849069B1 (ko) * 2007-04-20 2008-07-30 주식회사 하이닉스반도체 정전기 방전 보호 장치
US8057602B2 (en) * 2007-05-09 2011-11-15 Applied Materials, Inc. Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber
JP2008288427A (ja) 2007-05-18 2008-11-27 Elpida Memory Inc 温度調節装置、ステージ装置、露光装置および露光方法
US20090000738A1 (en) * 2007-06-29 2009-01-01 Neil Benjamin Arrays of inductive elements for minimizing radial non-uniformity in plasma
JP2009170509A (ja) 2008-01-11 2009-07-30 Hitachi High-Technologies Corp ヒータ内蔵静電チャックを備えたプラズマ処理装置
JP4486135B2 (ja) * 2008-01-22 2010-06-23 東京エレクトロン株式会社 温度制御機構およびそれを用いた処理装置
JP5351479B2 (ja) * 2008-01-28 2013-11-27 東京エレクトロン株式会社 加熱源の冷却構造
JP5307445B2 (ja) 2008-04-28 2013-10-02 日本碍子株式会社 基板保持体及びその製造方法
US20100116788A1 (en) * 2008-11-12 2010-05-13 Lam Research Corporation Substrate temperature control by using liquid controlled multizone substrate support
JP2010153730A (ja) 2008-12-26 2010-07-08 Omron Corp 配線構造、ヒータ駆動装置、計測装置および制御システム
GB2470063B (en) * 2009-05-08 2011-09-28 Siemens Magnet Technology Ltd Quench propagation circuit for superconducting magnets
US8697197B2 (en) * 2009-07-08 2014-04-15 Plasmasi, Inc. Methods for plasma processing
US8637794B2 (en) * 2009-10-21 2014-01-28 Lam Research Corporation Heating plate with planar heating zones for semiconductor processing
KR101841378B1 (ko) 2009-12-15 2018-03-22 램 리써치 코포레이션 Ｃｄ 균일성을 향상시키기 위한 기판 온도의 조절
US8791392B2 (en) 2010-10-22 2014-07-29 Lam Research Corporation Methods of fault detection for multiplexed heater array
US8546732B2 (en) 2010-11-10 2013-10-01 Lam Research Corporation Heating plate with planar heater zones for semiconductor processing
US10388493B2 (en) 2011-09-16 2019-08-20 Lam Research Corporation Component of a substrate support assembly producing localized magnetic fields
US8624168B2 (en) 2011-09-20 2014-01-07 Lam Research Corporation Heating plate with diode planar heater zones for semiconductor processing
US8461674B2 (en) 2011-09-21 2013-06-11 Lam Research Corporation Thermal plate with planar thermal zones for semiconductor processing

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1777974A (zh) * 2003-02-27 2006-05-24 Lam研究有限公司 通过局部晶片温度控制对晶片上的临界尺寸变化的补偿
CN101243549A (zh) * 2005-08-09 2008-08-13 松下电器产业株式会社 晶片级老化方法以及晶片级老化装置
US20080105669A1 (en) * 2006-11-02 2008-05-08 Tokyo Electron Limited Temperature setting method of thermal processing plate, computer-readable recording medium recording program thereon, and temperature setting apparatus for thermal processing plate
KR20080058109A (ko) * 2006-12-21 2008-06-25 동부일렉트로닉스 주식회사 웨이퍼 가열장치 및 가열방법

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10056225B2 (en) 2009-12-15 2018-08-21 Lam Research Corporation Adjusting substrate temperature to improve CD uniformity
CN103854947A (zh) * 2012-11-30 2014-06-11 朗姆研究公司 用于带有热控元件阵列的esc的功率切换系统
CN105408993A (zh) * 2013-08-06 2016-03-16 应用材料公司 局部加热的多区域基板支撑件
CN109473381A (zh) * 2018-10-31 2019-03-15 上海华力微电子有限公司 湿法刻蚀清洗设备和方法
CN114127904A (zh) * 2019-07-18 2022-03-01 应用材料公司 半导体制造中基于多区加热器模型的控制

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