AU2002212963A1 - Method of and structure for controlling electrode temperature - Google Patents

Method of and structure for controlling electrode temperature

Info

Publication number
AU2002212963A1
AU2002212963A1 AU2002212963A AU1296302A AU2002212963A1 AU 2002212963 A1 AU2002212963 A1 AU 2002212963A1 AU 2002212963 A AU2002212963 A AU 2002212963A AU 1296302 A AU1296302 A AU 1296302A AU 2002212963 A1 AU2002212963 A1 AU 2002212963A1
Authority
AU
Australia
Prior art keywords
electrode temperature
controlling electrode
controlling
temperature
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002212963A
Inventor
Jim Fordemwalt
Wayne L. Johnson
Andrej Mitrovic
Eric J. Strang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of AU2002212963A1 publication Critical patent/AU2002212963A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
AU2002212963A 2000-10-25 2001-10-24 Method of and structure for controlling electrode temperature Abandoned AU2002212963A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US24271400P 2000-10-25 2000-10-25
US60242714 2000-10-25
PCT/US2001/027781 WO2002034451A1 (en) 2000-10-25 2001-10-24 Method of and structure for controlling electrode temperature

Publications (1)

Publication Number Publication Date
AU2002212963A1 true AU2002212963A1 (en) 2002-05-06

Family

ID=22915897

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002212963A Abandoned AU2002212963A1 (en) 2000-10-25 2001-10-24 Method of and structure for controlling electrode temperature

Country Status (3)

Country Link
US (1) US7075031B2 (en)
AU (1) AU2002212963A1 (en)
WO (1) WO2002034451A1 (en)

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US6617553B2 (en) * 1999-05-19 2003-09-09 Applied Materials, Inc. Multi-zone resistive heater
US6906537B2 (en) * 2002-08-19 2005-06-14 Hamilton Sundstrand System for controlling the temperature of an aircraft airfoil component
ES2221569B1 (en) * 2003-05-30 2006-03-16 Chemplate Materials, S.L. ELECTRODE FOR MACHINES FOR WELDING BY ELECTROMAGNETIC INDUCTION OF THE CONSTITUTIVE LAYERS OF A MULTI-PAPER PRINTED CIRCUIT.
TWI247551B (en) * 2003-08-12 2006-01-11 Ngk Insulators Ltd Method of manufacturing electrical resistance heating element
US8317968B2 (en) * 2004-04-30 2012-11-27 Lam Research Corporation Apparatus including gas distribution member supplying process gas and radio frequency (RF) power for plasma processing
US7712434B2 (en) * 2004-04-30 2010-05-11 Lam Research Corporation Apparatus including showerhead electrode and heater for plasma processing
US7566181B2 (en) * 2004-09-01 2009-07-28 Tokyo Electron Limited Controlling critical dimensions of structures formed on a wafer in semiconductor processing
WO2006059808A1 (en) * 2004-12-03 2006-06-08 Kabushiki Kaisha Toyota Jidoshokki Submerged plasma-use electrode, submerged plasma generating device and submerged plasma generating method
US20060191638A1 (en) * 2005-02-28 2006-08-31 International Business Machines Corporation Etching apparatus for semiconductor fabrication
US20080026598A1 (en) * 2006-07-26 2008-01-31 Taek Yong Jang Semiconductor manufacturing device and method
CN101512735B (en) * 2006-09-08 2012-02-22 株式会社爱发科 Apparatus and method for dry etching
US8375890B2 (en) * 2007-03-19 2013-02-19 Micron Technology, Inc. Apparatus and methods for capacitively coupled plasma vapor processing of semiconductor wafers
KR101173645B1 (en) * 2007-12-31 2012-08-20 (주)에이디에스 Gas injection unit and apparatus for depositing thin film having the same
US7929269B2 (en) * 2008-09-04 2011-04-19 Momentive Performance Materials Inc. Wafer processing apparatus having a tunable electrical resistivity
US8637794B2 (en) 2009-10-21 2014-01-28 Lam Research Corporation Heating plate with planar heating zones for semiconductor processing
JP6066728B2 (en) * 2009-12-15 2017-01-25 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ Method for adjusting substrate temperature and plasma etching system for improving CD uniformity
US8791392B2 (en) 2010-10-22 2014-07-29 Lam Research Corporation Methods of fault detection for multiplexed heater array
US8546732B2 (en) 2010-11-10 2013-10-01 Lam Research Corporation Heating plate with planar heater zones for semiconductor processing
US9307578B2 (en) 2011-08-17 2016-04-05 Lam Research Corporation System and method for monitoring temperatures of and controlling multiplexed heater array
JP5915026B2 (en) * 2011-08-26 2016-05-11 住友大阪セメント株式会社 Plate for temperature measurement and temperature measurement apparatus provided with the same
US10388493B2 (en) 2011-09-16 2019-08-20 Lam Research Corporation Component of a substrate support assembly producing localized magnetic fields
US8624168B2 (en) 2011-09-20 2014-01-07 Lam Research Corporation Heating plate with diode planar heater zones for semiconductor processing
US8461674B2 (en) 2011-09-21 2013-06-11 Lam Research Corporation Thermal plate with planar thermal zones for semiconductor processing
US9324589B2 (en) 2012-02-28 2016-04-26 Lam Research Corporation Multiplexed heater array using AC drive for semiconductor processing
US8809747B2 (en) 2012-04-13 2014-08-19 Lam Research Corporation Current peak spreading schemes for multiplexed heated array
JP2013222878A (en) * 2012-04-18 2013-10-28 Hitachi High-Technologies Corp Plasma heat treatment method and device
US10049948B2 (en) 2012-11-30 2018-08-14 Lam Research Corporation Power switching system for ESC with array of thermal control elements
US10690414B2 (en) * 2015-12-11 2020-06-23 Lam Research Corporation Multi-plane heater for semiconductor substrate support
US10366867B2 (en) 2016-08-19 2019-07-30 Applied Materials, Inc. Temperature measurement for substrate carrier using a heater element array
JP7094804B2 (en) * 2018-07-03 2022-07-04 東京エレクトロン株式会社 Board processing equipment and board processing method
KR102110417B1 (en) * 2018-08-21 2020-05-13 엘지전자 주식회사 Electric Heater
KR102159800B1 (en) * 2018-08-21 2020-09-25 엘지전자 주식회사 Electric Heater
CN113745082B (en) * 2020-05-28 2023-10-31 中微半导体设备(上海)股份有限公司 Plasma processing device, heating device thereof and working method thereof
CN114496692B (en) * 2020-11-11 2024-03-12 中微半导体设备(上海)股份有限公司 Heating assembly, substrate bearing assembly and plasma processing device thereof

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4201579A (en) 1978-06-05 1980-05-06 Motorola, Inc. Method for removing photoresist by hydrogen plasma
US5215619A (en) 1986-12-19 1993-06-01 Applied Materials, Inc. Magnetic field-enhanced plasma etch reactor
US5800618A (en) * 1992-11-12 1998-09-01 Ngk Insulators, Ltd. Plasma-generating electrode device, an electrode-embedded article, and a method of manufacturing thereof
US5824158A (en) * 1993-06-30 1998-10-20 Kabushiki Kaisha Kobe Seiko Sho Chemical vapor deposition using inductively coupled plasma and system therefor
JP3146112B2 (en) 1993-12-24 2001-03-12 シャープ株式会社 Plasma CVD equipment
EP0966028A1 (en) 1996-01-26 1999-12-22 Matsushita Electronics Corporation Semiconductor manufacturing apparatus
US5895596A (en) * 1997-01-27 1999-04-20 Semitool Thermal Model based temperature controller for semiconductor thermal processors
US6278089B1 (en) * 1999-11-02 2001-08-21 Applied Materials, Inc. Heater for use in substrate processing
US6664738B2 (en) * 2002-02-27 2003-12-16 Hitachi, Ltd. Plasma processing apparatus

Also Published As

Publication number Publication date
US7075031B2 (en) 2006-07-11
US20040011770A1 (en) 2004-01-22
WO2002034451A1 (en) 2002-05-02

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