AU2001269878A1 - Power mosfet and method of making the same - Google Patents

Power mosfet and method of making the same

Info

Publication number
AU2001269878A1
AU2001269878A1 AU2001269878A AU6987801A AU2001269878A1 AU 2001269878 A1 AU2001269878 A1 AU 2001269878A1 AU 2001269878 A AU2001269878 A AU 2001269878A AU 6987801 A AU6987801 A AU 6987801A AU 2001269878 A1 AU2001269878 A1 AU 2001269878A1
Authority
AU
Australia
Prior art keywords
making
same
power mosfet
mosfet
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001269878A
Inventor
Fwu-Iuan Hshieh
Koon Chong So
Yan Man Tsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Semiconductor Inc
Original Assignee
General Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Semiconductor Inc filed Critical General Semiconductor Inc
Publication of AU2001269878A1 publication Critical patent/AU2001269878A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
AU2001269878A 2000-06-16 2001-06-15 Power mosfet and method of making the same Abandoned AU2001269878A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US59512000A 2000-06-16 2000-06-16
US09/595,120 2000-06-16
PCT/US2001/019377 WO2001099198A2 (en) 2000-06-16 2001-06-15 Power mosfet and method of making the same

Publications (1)

Publication Number Publication Date
AU2001269878A1 true AU2001269878A1 (en) 2002-01-02

Family

ID=24381814

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001269878A Abandoned AU2001269878A1 (en) 2000-06-16 2001-06-15 Power mosfet and method of making the same

Country Status (8)

Country Link
US (1) US6620691B2 (en)
EP (2) EP1295343A2 (en)
JP (1) JP5442921B2 (en)
KR (1) KR100850689B1 (en)
CN (1) CN100416855C (en)
AU (1) AU2001269878A1 (en)
TW (1) TW523816B (en)
WO (1) WO2001099198A2 (en)

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JP4860102B2 (en) * 2003-06-26 2012-01-25 ルネサスエレクトロニクス株式会社 Semiconductor device
TWI400757B (en) * 2005-06-29 2013-07-01 Fairchild Semiconductor Methods for forming shielded gate field effect transistors
KR100905778B1 (en) 2006-12-29 2009-07-02 주식회사 하이닉스반도체 Manufacturing method of semiconductor device
JP4600936B2 (en) 2007-06-20 2010-12-22 三菱電機株式会社 Semiconductor device and manufacturing method thereof
JP5123622B2 (en) * 2007-09-13 2013-01-23 株式会社日立製作所 Semiconductor device and manufacturing method thereof
US9484451B2 (en) 2007-10-05 2016-11-01 Vishay-Siliconix MOSFET active area and edge termination area charge balance
US8314471B2 (en) * 2009-11-17 2012-11-20 Diodes Incorporated Trench devices having improved breakdown voltages and method for manufacturing same
US8698232B2 (en) 2010-01-04 2014-04-15 International Rectifier Corporation Semiconductor device including a voltage controlled termination structure and method for fabricating same
TWI438901B (en) 2010-05-27 2014-05-21 Sinopower Semiconductor Inc Power semiconductor device having low gate input resistance and manufacturing method thereof
US9431249B2 (en) 2011-12-01 2016-08-30 Vishay-Siliconix Edge termination for super junction MOSFET devices
US9614043B2 (en) 2012-02-09 2017-04-04 Vishay-Siliconix MOSFET termination trench
US9842911B2 (en) 2012-05-30 2017-12-12 Vishay-Siliconix Adaptive charge balanced edge termination
TW201423869A (en) * 2012-12-13 2014-06-16 Anpec Electronics Corp Method for fabricating trench type transistor
DE102013108518B4 (en) * 2013-08-07 2016-11-24 Infineon Technologies Ag SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
US9023709B2 (en) * 2013-08-27 2015-05-05 Globalfoundries Inc. Top corner rounding by implant-enhanced wet etching
JP6168961B2 (en) * 2013-10-10 2017-07-26 三菱電機株式会社 Semiconductor device
US10395970B2 (en) * 2013-12-05 2019-08-27 Vishay-Siliconix Dual trench structure
JP2015230932A (en) * 2014-06-04 2015-12-21 三菱電機株式会社 Silicon carbide semiconductor device and silicon carbide semiconductor device manufacturing method
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices
EP3183754A4 (en) 2014-08-19 2018-05-02 Vishay-Siliconix Super-junction metal oxide semiconductor field effect transistor
CN104167354B (en) * 2014-09-18 2017-07-28 上海华力微电子有限公司 The method that gate oxide homogeneity is improved by the dual oxide of grid oxygen
US9673314B2 (en) 2015-07-08 2017-06-06 Vishay-Siliconix Semiconductor device with non-uniform trench oxide layer
CN105185698A (en) * 2015-08-11 2015-12-23 上海华虹宏力半导体制造有限公司 Method of reducing source drain breakdown voltage creep deformation of channel power device

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JPS63166230A (en) 1986-12-26 1988-07-09 Toshiba Corp Dry etching method
JP2635607B2 (en) 1987-08-28 1997-07-30 株式会社東芝 Method for manufacturing semiconductor device
JP2644515B2 (en) * 1988-01-27 1997-08-25 株式会社日立製作所 Semiconductor device
US5072266A (en) 1988-12-27 1991-12-10 Siliconix Incorporated Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry
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US5304831A (en) 1990-12-21 1994-04-19 Siliconix Incorporated Low on-resistance power MOS technology
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US5233215A (en) * 1992-06-08 1993-08-03 North Carolina State University At Raleigh Silicon carbide power MOSFET with floating field ring and floating field plate
US5430324A (en) * 1992-07-23 1995-07-04 Siliconix, Incorporated High voltage transistor having edge termination utilizing trench technology
US5316959A (en) * 1992-08-12 1994-05-31 Siliconix, Incorporated Trenched DMOS transistor fabrication using six masks
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JP3400846B2 (en) * 1994-01-20 2003-04-28 三菱電機株式会社 Semiconductor device having trench structure and method of manufacturing the same
US5468982A (en) * 1994-06-03 1995-11-21 Siliconix Incorporated Trenched DMOS transistor with channel block at cell trench corners
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DE19935442C1 (en) * 1999-07-28 2000-12-21 Siemens Ag Power trench-metal oxide semiconductor transistor is produced using a temporary layer to allow formation of a trench insulating film which is thicker at the trench lower end than at the trench upper end

Also Published As

Publication number Publication date
CN100416855C (en) 2008-09-03
EP2267787A3 (en) 2011-01-12
JP2004507882A (en) 2004-03-11
WO2001099198A3 (en) 2002-10-10
EP1295343A2 (en) 2003-03-26
JP5442921B2 (en) 2014-03-19
CN1449587A (en) 2003-10-15
KR20030084563A (en) 2003-11-01
TW523816B (en) 2003-03-11
US6620691B2 (en) 2003-09-16
KR100850689B1 (en) 2008-08-07
EP2267787A2 (en) 2010-12-29
WO2001099198A2 (en) 2001-12-27
EP2267787B1 (en) 2020-04-22
US20020061623A1 (en) 2002-05-23

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