AU2002211652A1 - Method of making an electrode - Google Patents

Method of making an electrode

Info

Publication number
AU2002211652A1
AU2002211652A1 AU2002211652A AU1165202A AU2002211652A1 AU 2002211652 A1 AU2002211652 A1 AU 2002211652A1 AU 2002211652 A AU2002211652 A AU 2002211652A AU 1165202 A AU1165202 A AU 1165202A AU 2002211652 A1 AU2002211652 A1 AU 2002211652A1
Authority
AU
Australia
Prior art keywords
electrode
making
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002211652A
Inventor
Mark Gottfried
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Emcore Corp
Original Assignee
Emcore Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Emcore Corp filed Critical Emcore Corp
Publication of AU2002211652A1 publication Critical patent/AU2002211652A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
AU2002211652A 2000-10-13 2001-10-12 Method of making an electrode Abandoned AU2002211652A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US24020700P 2000-10-13 2000-10-13
US60240207 2000-10-13
PCT/US2001/031839 WO2002031865A1 (en) 2000-10-13 2001-10-12 Method of making an electrode

Publications (1)

Publication Number Publication Date
AU2002211652A1 true AU2002211652A1 (en) 2002-04-22

Family

ID=22905574

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002211652A Abandoned AU2002211652A1 (en) 2000-10-13 2001-10-12 Method of making an electrode

Country Status (3)

Country Link
US (2) US6727167B2 (en)
AU (1) AU2002211652A1 (en)
WO (1) WO2002031865A1 (en)

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KR100568502B1 (en) * 2004-08-11 2006-04-07 한국전자통신연구원 Semiconductor emission device
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TWI285968B (en) * 2004-12-01 2007-08-21 Chiu-Chung Yang Chip with high efficient heat dissipation and brightness
US8085507B2 (en) * 2005-01-13 2011-12-27 Hitachi Global Storage Technologies, Netherlands, B.V. Method and apparatus for forming an opening in a base-metal layer of an electrical lead suspension (ELS) to increase the impedance
US7961621B2 (en) 2005-10-11 2011-06-14 Cisco Technology, Inc. Methods and devices for backward congestion notification
US8121038B2 (en) 2007-08-21 2012-02-21 Cisco Technology, Inc. Backward congestion notification
US9633883B2 (en) 2015-03-20 2017-04-25 Rohinni, LLC Apparatus for transfer of semiconductor devices
DE102016105056A1 (en) * 2016-03-18 2017-09-21 Osram Opto Semiconductors Gmbh Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip
US10141215B2 (en) 2016-11-03 2018-11-27 Rohinni, LLC Compliant needle for direct transfer of semiconductor devices
US10471545B2 (en) 2016-11-23 2019-11-12 Rohinni, LLC Top-side laser for direct transfer of semiconductor devices
US10504767B2 (en) 2016-11-23 2019-12-10 Rohinni, LLC Direct transfer apparatus for a pattern array of semiconductor device die
US10062588B2 (en) 2017-01-18 2018-08-28 Rohinni, LLC Flexible support substrate for transfer of semiconductor devices
KR102345618B1 (en) 2017-09-01 2021-12-31 삼성전자주식회사 Light emitting diode apparatus and manufacturing method thereof
US10410905B1 (en) 2018-05-12 2019-09-10 Rohinni, LLC Method and apparatus for direct transfer of multiple semiconductor devices
US11094571B2 (en) 2018-09-28 2021-08-17 Rohinni, LLC Apparatus to increase transferspeed of semiconductor devices with micro-adjustment

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Also Published As

Publication number Publication date
US20020102760A1 (en) 2002-08-01
WO2002031865A1 (en) 2002-04-18
US20040171245A1 (en) 2004-09-02
US6727167B2 (en) 2004-04-27
US6946313B2 (en) 2005-09-20

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