CN113745082B - Plasma processing device, heating device thereof and working method thereof - Google Patents
Plasma processing device, heating device thereof and working method thereof Download PDFInfo
- Publication number
- CN113745082B CN113745082B CN202010468388.3A CN202010468388A CN113745082B CN 113745082 B CN113745082 B CN 113745082B CN 202010468388 A CN202010468388 A CN 202010468388A CN 113745082 B CN113745082 B CN 113745082B
- Authority
- CN
- China
- Prior art keywords
- heating
- resistors
- plasma processing
- resistor
- critical dimension
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 291
- 238000000034 method Methods 0.000 title claims abstract description 42
- 238000009826 distribution Methods 0.000 claims abstract description 50
- 239000007921 spray Substances 0.000 claims description 19
- 238000006243 chemical reaction Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 16
- 230000007423 decrease Effects 0.000 claims description 2
- 238000005530 etching Methods 0.000 abstract description 26
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000007789 gas Substances 0.000 description 40
- 238000009776 industrial production Methods 0.000 description 7
- 230000001276 controlling effect Effects 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 5
- 238000000638 solvent extraction Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000006258 conductive agent Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
- H01J2237/3345—Problems associated with etching anisotropy
Abstract
The invention discloses a heating device for a plasma processing device, which comprises an upper electrode, wherein the heating device is used for heating the upper electrode and comprises a plurality of heating resistors and a common heating source; the heating resistors are arranged in a scattering manner and surround to form a circular ring, and the circular ring comprises a plurality of areas along the circumferential direction of the circular ring; the common heating source is connected with the heating resistors of all the areas and is used for controlling the temperature of the heating resistors of all the areas. The invention solves the problem of limitation of critical dimension range and symmetry distribution in the conventional small critical dimension wafer etching process, and adjusts the area with uneven critical dimension by designing the heating device with adjustable area temperature, thereby ensuring the symmetry distribution of critical dimension and improving the stability and controllability of transistor production.
Description
Technical Field
The invention relates to the technical field of integrated circuits, in particular to a plasma processing device, a heating device thereof and a working method thereof.
Background
In the integrated circuit fabrication industry, the critical dimensions (Critical Dimension, CD) of transistors are continually shrinking and the density is continually increasing. For the plasma etching, the critical dimension CD of the etched pattern becomes smaller and smaller. For etching equipment manufacturers, it is necessary to ensure uniformity distribution of wafer (wafer) etching. If the wafer uniformity distribution is difficult to control during etching, the resulting CD pattern (map) is easily seen as an asymmetric (S2S) distribution, i.e., the CD appears significantly above or below average in a certain direction (e.g., 9 o' clock) on the same radius.
During small critical dimension wafer etching, critical dimension range and symmetry distribution are limited. In the existing plasma etching equipment, the asymmetric temperature field distribution causes the difference of etching rates of different areas of wafer surface, and then S2S distribution is induced on the pattern of wafer etching.
The heating device in the etching process comprises a heating resistor 101, a heating resistor housing 102 and a heating power source, as shown in fig. 1, wherein the heating resistor housing 102 is sleeved on the periphery of the heating resistor 101, and a heat conductive agent such as silica gel is filled between the heating resistor 101 and the heating resistor housing 102; the heating resistor 101 is bent into a circular ring shape, one end of the heating resistor is opened, and an inner wire terminal 103 and an outer wire terminal 103 are respectively arranged at the opening and are used for being connected with an external heating power source; the heating resistor 101 is heated by the heating power source, thereby completing the heating during the etching process of the plasma processing apparatus.
However, due to the presence of the inner and outer terminals 103 at the opening of the heating resistor 101, the heat generated at the terminal 103 of the heating resistor 101 is always less than the heat generated at other positions of the heating resistor 101, so that the heat generated by the heating resistor 101 is uneven, and the critical dimensions of the etched wafer may be asymmetrically distributed. Meanwhile, for a small CD etching process with a narrower process window, the CD at the terminal 103 is eventually larger than the CD at other positions with the same radius, resulting in S2S distribution, so that the uniformity of the CD across wafer is poor.
Meanwhile, besides the problem of S2S distribution caused by the system, another large problem, namely S2S distribution caused by the preamble process, needs to be overcome in the actual production process. In the entire deposition-printing-etching process, the printing-before-etching process may be limited by some machines, which themselves cause some S2S distribution, which must be overcome during etching.
Thus, in a comprehensive view, it is difficult for the conventional heating apparatus to ensure a symmetrical distribution of critical dimensions in the face of a certain asymmetric distribution existing in the chamber of the plasma etching system itself and an S2S distribution caused by the precursor process.
Disclosure of Invention
The invention aims to provide a plasma processing device, a heating device and a working method thereof, which are used for solving the asymmetry at different phase angles.
In order to achieve the above object, the present invention provides a heating device for a plasma processing apparatus, the plasma processing apparatus including an upper electrode, the heating device being for heating the upper electrode, the heating device including a plurality of heating resistors and a common heating source; the heating resistors are arranged in a scattering manner and surround to form a circular ring, and the circular ring comprises a plurality of areas along the circumferential direction of the circular ring; the common heating source is connected with the heating resistors of all the areas and is used for controlling the temperature of the heating resistors of all the areas.
The heating device for the plasma processing device further comprises a plurality of controllers connected with the heating resistors of the corresponding areas and used for controlling the temperature of the heating resistors of each area.
The heating device for the plasma processing device, wherein the controller is an independent heating source and controls the temperature of the heating resistor of each zone.
The heating device for the plasma processing device is characterized in that the heating resistor is a variable resistor, the controller is a control end of the variable resistor, and the heating resistor of each region is realized by adjusting the control end, so that the difference of the heating temperatures of each region is realized.
The heating device for the plasma processing device, wherein one end of each zone of heating resistor facing the circle center of the circular ring is connected into an internal electric connection end; one end of each zone heating resistor, which is away from the center of the circular ring, is connected into an external electric end; the heating resistors are respectively connected with the common power source and the controllers corresponding to the areas through the internal electric terminal and the external electric terminal.
The heating device for a plasma processing apparatus, wherein the length direction of the heating resistor is along the radial direction of the circular ring.
The invention also provides a plasma processing device, which comprises a reaction cavity, an upper electrode and the heating device; the upper electrode is positioned at the top of the reaction cavity; the heating device is used for heating the upper electrode.
The plasma processing device, wherein the upper electrode comprises a mounting substrate positioned at the top of the reaction cavity and a gas spray head positioned below the mounting substrate; the plasma processing apparatus further includes: the base is positioned at the bottom of the reaction cavity and is opposite to the gas spray head; the heating device is used for heating the mounting substrate.
The invention also provides a working method of the heating device for the plasma processing device, which comprises the following steps:
the common heating source is utilized to simultaneously carry out power adjustment on a plurality of heating resistors;
the heating resistor is used for simultaneously heating along the scattering shape of the circular ring so as to control the temperature of the upper electrode;
and detecting the critical dimension of the etched wafer, and completing heating when the critical dimension is symmetrically distributed on different phase angles.
According to the working method of the heating device for the plasma processing device, the critical dimension of the etched wafer is detected, when the critical dimension is asymmetrically distributed on different phase angles, the controller is used for adjusting the heating condition of the heating resistor of the corresponding area, so that the symmetrical distribution of the critical dimension is realized, and the heating is completed.
According to the working method of the heating device for the plasma processing device, before the common heating source is subjected to power adjustment, the heating device dynamically learns and adjusts the PID value of the common heating source according to PID control software, so that the P value, the I value and the D value of the specific temperature are realized.
The working method of the heating device for the plasma processing device comprises the steps of dynamically regulating the common heating source according to the PID value, and simultaneously carrying out power regulation on a plurality of heating resistors by the common heating source to control the temperature of the upper electrode.
According to the working method of the heating device for the plasma processing device, the independent heating source is set with a default power, and the power of the heating resistor of the corresponding area is increased or decreased by the independent heating source on the basis of the default power so as to adjust the heating condition of the independent heating source to compensate the asymmetric distribution of the critical dimension.
According to the working method of the heating device for the plasma processing device, the common heating source is dynamically regulated and controlled according to the PID value, and the common heating source simultaneously provides the same voltage for a plurality of variable resistors, so that heating is realized to control the temperature of the upper electrode.
According to the working method of the heating device for the plasma processing device, the control end of the variable resistor adjusts the resistance value of the variable resistor of the corresponding region to adjust the power of the corresponding region, so that the heating condition of the corresponding region is adjusted to compensate the asymmetric distribution of the critical dimension.
By using the method, the problem of limitation of the critical dimension range and symmetry distribution of the conventional wafer etching with small critical dimension is solved, and the area with uneven critical dimension is regulated by designing the heating device with adjustable area temperature, so that the symmetry distribution of the critical dimension is ensured, and the stability and controllability of transistor production are improved.
Compared with the prior art, the invention has the following beneficial effects:
1. in the heating device of the plasma processing device, the heating resistors are separately arranged to be a plurality of heating resistors and are uniformly divided into a plurality of Zone, so that the uniformity of heating of the heating resistors is realized, the heating power received by each Zone is ensured to be the same, a special cold point is not existed on the circumferential distribution of the heating resistors, the problem of uneven temperature caused by the heating resistors is solved from the source, and the problem of S2S distribution caused by etching equipment can be solved.
2. In the heating device of the plasma processing device, the heating resistor is managed in a partitioning mode, and the heating power of different Zone is dynamically adjusted, so that the actual temperatures of different areas of the gas spray header are changed, the S2S distribution problem caused by a precursor process is compensated, and the S2S distribution problem caused by non-thermal factors such as radio frequency, gas flow field and the like in the etching device is also improved.
Drawings
FIG. 1 is a schematic diagram of a conventional heating device;
FIG. 2 is a schematic view of a plasma processing apparatus according to the present invention;
FIG. 3 is a schematic diagram of a structure of a plurality of heating resistors according to the present invention;
FIG. 4 is a schematic view of the structure of the common heating source and the independent heating source in embodiment 1 provided by the present invention;
fig. 5 is a schematic diagram of the structure of the common heating source and the variable resistor control terminal in embodiment 2 provided by the present invention.
Detailed Description
The invention is further described by the following examples, which are given by way of illustration only and are not limiting of the scope of the invention.
Referring to fig. 2, the present invention is a heating device 2 for a plasma processing apparatus; wherein the plasma processing device comprises a reaction cavity 1, a heating device 2 and an upper electrode 3; the upper electrode 3 is positioned at the top of the reaction cavity 1; the heating device 2 is used for heating the upper electrode 3.
With continued reference to fig. 2, the upper electrode 3 of the plasma processing apparatus includes a mounting substrate (mount base) 301 located on top of the reaction chamber 1 and a gas shower head (shower head) 302 located below the mounting substrate 301; the plasma processing apparatus further includes: the base 4 is positioned at the inner bottom of the reaction cavity 1, and the base 4 is arranged opposite to the gas spray header 302; the heating device 2 is used to heat the mounting substrate 301.
In this embodiment, the plasma processing apparatus is a capacitively coupled plasma etching apparatus (CCP). Wherein, the base 4 is an electrostatic chuck (ESC) and is arranged opposite to the gas spray head 302 as a lower electrode to form an electrode structure of a parallel plate structure; a wafer (wafer) is placed on a susceptor 4 inside the reaction chamber 1.
Wherein, the gas shower head 302 is connected to the lower part of the mounting substrate 301 through a connecting piece such as a screw; a grounding cavity shell (chamber) 5 is positioned on the outer side wall of the reaction cavity 1 and is connected with the upper electrode 3; the mounting substrate 301 is connected with the top of the grounding cavity shell 5 in a sealing way through a first O-shaped sealing ring (sealing ring); the mounting substrate 301 is an aluminum plate.
A plurality of gas through holes (gas holes) are arranged in the middle of the mounting substrate 301 and respectively correspond to the holes of the gas spray heads 302 to form gas passages of the upper electrodes 3; the upper end of the mounting substrate 301 is connected with a gas buffer chamber (gas buffer) through a second O-ring to form a closed space for buffering the reaction gas in the gas buffer chamber; the material of the gas buffer chamber is aluminum.
The heating device 2 is also connected to the mounting substrate 301 of the upper electrode 3 through a graphite heat conductive sheet (graphite strip) 6, and transfers heat to the gas shower head 302 through the graphite heat conductive sheet 6 and the mounting substrate 301, thereby completing temperature control of the gas shower head 302.
In the plasma etching process, a radio frequency source (RF source) generates radio frequency power, the radio frequency source (RF source) is coupled between an electrostatic chuck 4 and a gas spray header 302 through an automatic matcher (match) to generate plasma, etching operation is performed on a wafer on the electrostatic chuck 4, finally the wafer returns to the radio frequency source through a grounding cavity shell 5 to form a loop, gas enters a gas buffer chamber, and the gas enters a plurality of gas through holes (gas holes) to enter between the gas spray header 302 and the wafer (wafer) to absorb the radio frequency power for decomposition, and a heating device 2 adjusts the input power according to the temperature of the gas spray header 302 to realize dynamic adjustment of the surface temperature of the gas spray header 302.
Example 1:
the heating device 2 comprises a number of heating resistors 201, a common heating source P0 and a number of controllers P. The heating resistors 201 are arranged in a scattering mode and surround the heating resistors to form a circular ring, and the circular ring comprises a plurality of zones Zone along the circumferential direction of the circular ring, so that the uniformity of heating of the heating resistors 201 is realized, and the heating power received by each Zone is ensured to be the same;
in the embodiment 1 of the invention, the heating device 2 is separately arranged into a plurality of surrounding heating resistors 201 and is uniformly divided into a plurality of zones, compared with the problem that the heat generated at the inner and outer wire terminals 103 at the opening of the traditional heating resistor 101 is nonuniform, the circumference distribution of the heating resistor 201 of the heating device 2 is ensured to have no special cold point (at the inner and outer wire terminals 103 at the opening of the traditional heating resistor 101), the problem of nonuniform temperature caused by the heating resistor is solved from the source, and the problem of S2S distribution caused by etching equipment per se can be solved.
Referring to fig. 3, the length direction of each heating resistor 201 is along the radius direction of the circular ring; the annular heating shell 202 is disposed outside the annular ring, and the number of zones divided in the circumferential direction of the annular ring may be other values, as described herein schematically by dividing the annular ring into 12 zones Zone1 to Zone12 in the circumferential direction.
The common heating source P0 is connected to the heating resistors 201 of all zones Zone for controlling the temperature of the heating resistors 201 of all zones Zone. Referring to fig. 3, each heating resistor 201 is provided with an inner connection line and an outer connection line at both ends in the radial direction of the circular ring, respectively; the internal connection wire of the heating resistor 201 in each Zone is connected into an internal connection end 203 towards one end of the circle center of the circular ring of the heating resistor 201 in each Zone 1-Zone 12; the heating resistors 201 of each Zone 1-Zone 12 are far away from one end of the circle center of the circular ring, and the outer connecting wires of the heating resistors 201 in each Zone are connected into an outer electric end 204.
Referring to fig. 4, the heating resistor 201 of each Zone1 to Zone12 is connected to the common power source P0 through the internal electric terminal 203 and the external electric terminal 204.
The plurality of controllers P are also connected with the corresponding heating resistors 201 through the internal electric terminals 203 and the external electric terminals 204 of the heating resistors 201 of the corresponding zones Zone, and are used for controlling the temperature of the heating resistors 201 of each Zone.
In this embodiment, referring to fig. 4, if the controller P is an independent heating source, the temperatures of the heating resistors 201 in the 12 zones are controlled by the 12 controllers P1 to P12 corresponding to the 12 zones, so that the heating power of the heating resistors 201 in each Zone can be managed in a partitioning manner, and the heating powers of different zones can be dynamically adjusted, thereby changing the actual temperatures of different zones of the gas spray header 302, compensating the S2S distribution problem caused by the preamble process of the etching process, and simultaneously improving the S2S distribution problem caused by non-thermal factors such as radio frequency and gas flow fields in the etching device, so that the stability and the controllability are improved in the process of industrial production of the transistor.
Embodiment 1 of the present invention also provides a method of operating the heating device 2 for the plasma processing apparatus 101, comprising:
the heating device 2 dynamically learns and adjusts the PID value of the common heating source P0 according to proportional-integral-derivative (PID) control software to realize the P value, the I value and the D value of the specific temperature;
the heating device 2 dynamically regulates and controls a common heating source P0 according to the PID value, and simultaneously power regulation is carried out on a plurality of heating resistors 201 by utilizing the common heating source P0;
the heating resistors 201 are heated along the scattering shape of the circular ring at the same time so as to control the temperature of the gas spray heads 302 on the upper electrode 3 and uniformly set the heating power of all the heating resistors 201;
detecting the Critical Dimension (CD) of the etched wafer in the reaction chamber 1 of the plasma processing device;
heating is accomplished when the key dimensions (CD) are symmetrically distributed over different phase angles;
when the asymmetry (S2S) distribution of the key size (CD) on different phase angles occurs, the controller P is utilized to adjust the heating condition of the heating resistor 201 of the Zone in the corresponding area, so that the symmetrical distribution of the key size (CD) is realized, the heating resistor 201 corresponding to the Zone is adjusted in a partitioning mode, the heating power of different Zone is dynamically adjusted, the actual temperatures of different areas of the gas spray head 302 are changed, heating is completed, and the S2S distribution problem of the wafer in the critical size is compensated, thereby improving the stability and the controllability in the process of the industrial production of the transistor.
In the present embodiment, referring to FIG. 4, the independent heating source P sets a default power P default The independent heating source P is at the default power P default The heating condition of the independent heating source P is adjusted to compensate for the asymmetric distribution of the Critical Dimension (CD) by increasing or decreasing the power of the heating resistor 201 of the corresponding Zone.
Wherein, when the wafer is etchedCD in the upper corresponding heating device Zone i (i=1, 2,..12) increases, then the independent heating source Pi (i=1, 2,..12) corresponding to Zone i is at the default power p default On the basis of the above, the heating power of Zone i is increased, so that the temperature of the gas spray header 302 on the upper electrode 3 of the corresponding area is increased, the CD of the wafer is reduced, and the symmetrical distribution of the critical dimension of the wafer is completed, thereby improving the stability and the controllability in the industrial production process of the transistor;
similarly, when CD in the corresponding heating device Zone i (i=1, 2,..12) on the etched wafer decreases, the independent heating source Pi corresponding to Zone i is at the default power p default On the basis of the above, the heating power of Zone i is reduced, so that the temperature of the gas spray header 302 on the upper electrode 3 of the corresponding area is reduced, the CD of the wafer is increased, and the symmetrical distribution of the critical dimension of the wafer is completed, thereby improving the stability and the controllability in the industrial production process of the transistor.
Example 2:
the heating device 2 comprises a number of heating resistors 201, a common heating source U0 and a number of controllers S. The heating resistors 201 are arranged in a scattering mode and surround the heating resistors to form a circular ring, and the circular ring comprises a plurality of zones Zone along the circumferential direction of the circular ring, so that the uniformity of heating of the heating resistors 201 is realized, and the heating power received by each Zone is ensured to be the same;
in the embodiment 2 of the invention, the heating device 2 is separately arranged into a plurality of surrounding heating resistors 201 and is uniformly divided into a plurality of zones, compared with the problem that the heat generated at the inner and outer wire terminals 103 at the opening of the traditional heating resistor 101 is nonuniform, the circumference distribution of the heating resistor 201 of the heating device 2 is ensured to have no special cold point (at the inner and outer wire terminals 103 at the opening of the traditional heating resistor 101), the problem of nonuniform temperature caused by the heating resistor is solved from the source, and the problem of S2S distribution caused by etching equipment per se can be solved.
Referring to fig. 3, the length direction of each heating resistor 201 is along the radius direction of the circular ring; the outside of the ring is provided with a ring-shaped heating shell 202, and the ring is divided into 12 zones Zone 1-Zone 12 along the circumferential direction.
The common heating source U0 is connected to the heating resistors 201 of all zones Zone for controlling the temperature of the heating resistors 201 of all zones Zone. Referring to fig. 3, each heating resistor 201 is provided with an inner connection line and an outer connection line at both ends in the radial direction of the circular ring, respectively; the internal connection wire of the heating resistor 201 in each Zone is connected into an internal connection end 203 towards one end of the circle center of the circular ring of the heating resistor 201 in each Zone 1-Zone 12; the heating resistors 201 of each Zone 1-Zone 12 are far away from one end of the circle center of the circular ring, and the outer connecting wires of the heating resistors 201 in each Zone are connected into an outer electric end 204.
Referring to fig. 5, the heating resistor 201 of each Zone1 to Zone12 is connected to the common power source U0 through the internal electric terminal 203 and the external electric terminal 204.
The plurality of controllers S are also connected with the corresponding heating resistors 201 through the internal electric terminals 203 and the external electric terminals 204 of the heating resistors 201 of the corresponding zones Zone, and are used for controlling the temperature of the heating resistors 201 of each Zone.
In embodiment 2, referring to fig. 5, the heating resistors 201 are variable resistors, the plurality of variable resistors 201 are divided into 12 zones Zone1 to Zone12, the number of corresponding variable resistor control terminals is 12, and the resistance of each Zone heating resistor is realized by adjusting the variable resistor control terminals S1 to S12, so that the difference of the Zone heating temperatures of each Zone is realized.
The variable resistor control ends S1 to S12 can manage the variable resistors 201 in the corresponding areas in a partitioning manner, dynamically adjust the heating powers of different zones, thereby changing the actual temperatures of different areas of the gas spray header 302, compensating the S2S distribution problem caused by the precursor process of the etching process, and improving the S2S distribution problem caused by non-thermal factors such as radio frequency and gas flow fields in the etching device, so that the stability and the controllability are improved in the process of industrial production of the transistor.
Embodiment 2 of the present invention also provides a method of operating a heating device 2 for a plasma processing apparatus, comprising:
the heating device 2 dynamically learns and adjusts the PID value of the common heating source U0 according to PID control software to realize the P value, the I value and the D value of the specific temperature;
the heating device 2 dynamically regulates and controls a common heating source U0 according to the PID value, and the common heating source U0 simultaneously provides the same voltage U for a plurality of variable resistors 201;
the heating resistors 201 are scattered along the circular ring to realize simultaneous heating, and the heating power of all the heating resistors 201 is uniformly set to control the temperature of the gas spray header 302 on the upper electrode 3; detecting the Critical Dimension (CD) of the etched wafer in the reaction chamber 1 of the plasma processing device;
heating is accomplished when the key dimensions (CD) are symmetrically distributed over different phase angles;
when the asymmetry (S2S) distribution of the Critical Dimension (CD) occurs at different phase angles, the controller S is used to adjust the heating conditions of the heating resistors 201 of the Zone corresponding to the Zone, dynamically adjust the heating power of the Zone, change the actual temperatures of the Zone of the gas shower head 302, complete the heating, compensate the S2S distribution of the critical dimension of the wafer at different phase angles, and realize the symmetry distribution of the Critical Dimension (CD).
In this embodiment, referring to fig. 5, the variable resistor control terminal S adjusts the resistance of the variable resistor 201 in the corresponding Zone to adjust the power of the corresponding Zone, thereby adjusting the heating condition of the corresponding Zone, and changing the actual temperatures of different areas of the gas shower head 302 to compensate for the asymmetry (S2S) distribution of the Critical Dimension (CD).
When the CD in the wafer corresponding to the heating device Zone i (i=1, 2, 12) after etching increases, the resistance value of the variable resistor 201 of the Zone i corresponding to the Zone i is adjusted and reduced by the variable resistor control end Si (i=1, 2, 12), so as to adjust the power increase of the Zone i, thereby increasing the temperature of the gas spray head 302 on the upper electrode 3 of the Zone i, reducing the CD of the wafer, and completing the symmetrical distribution of the critical dimension of the wafer, and further improving the stability and controllability in the process of industrial production of the transistor;
similarly, when the CD in the wafer corresponding to the heating device Zone i (i=1, 2,..12) after etching is reduced, the resistance value of the variable resistor 201 of the Zone i corresponding to the Zone i is adjusted and increased by the variable resistor control end Si (i=1, 2,..12), so that the heating power of the Zone i is reduced, the temperature of the gas shower head 302 on the upper electrode 3 of the Zone i is reduced, the CD of the wafer is increased, and the symmetrical distribution of the critical dimension of the wafer is completed, so that the stability and the controllability are improved in the process of the industrial production of the transistor.
The working principle of the invention is as follows:
the common heating source is utilized to simultaneously carry out power adjustment on a plurality of heating resistors, and the temperature of the upper electrode is controlled; detecting the critical dimension of the etched wafer; heating is completed when the critical dimensions are symmetrically distributed over different phase angles; when the key size is asymmetrically distributed on different phase angles, the controller is used for adjusting the heating condition of the heating resistor of the corresponding area, so that the symmetrical distribution of the key size is realized, and the heating is completed.
In summary, the method for forming a semiconductor structure solves the problems of limitation of the critical dimension range and symmetry distribution of the conventional wafer etching with small critical dimension, and adjusts the non-uniform critical dimension region by designing the heating device with adjustable region temperature, thereby ensuring the symmetry distribution of the critical dimension and improving the stability and controllability of transistor production.
While the present invention has been described in detail through the foregoing description of the preferred embodiment, it should be understood that the foregoing description is not to be considered as limiting the invention. Many modifications and substitutions of the present invention will become apparent to those of ordinary skill in the art upon reading the foregoing. Accordingly, the scope of the invention should be limited only by the attached claims.
Claims (13)
1. A heating apparatus for a plasma processing apparatus, the plasma processing apparatus including an upper electrode, the heating apparatus being configured to heat the upper electrode, the heating apparatus comprising: the heating resistors are arranged in a scattering mode and surround to form a circular ring, the length direction of the heating resistors is along the radial direction of the circular ring, and the circular ring comprises a plurality of areas along the circumferential direction of the circular ring;
the common heating source is connected with the heating resistors of all the areas and is used for controlling the temperature of the heating resistors of all the areas;
and the controllers are connected with the heating resistors of the corresponding areas and are used for controlling the temperature of the heating resistors of each area.
2. The heating apparatus for a plasma processing apparatus as recited in claim 1, wherein said controller is an independent heating source for controlling the temperature of the heating resistors of each zone.
3. The heating apparatus for a plasma processing apparatus according to claim 1, wherein the heating resistor is a variable resistor, the controller is a control terminal of the variable resistor, and the resistance of the heating resistor of each region is realized by adjusting the control terminal, thereby realizing the difference of the heating temperatures of each region.
4. The heating apparatus for a plasma processing apparatus according to claim 1, wherein one end of each of said zone heating resistors toward the center of said circular ring is connected to an internal power terminal; one end of each zone heating resistor, which is away from the center of the circular ring, is connected into an external electric end; and the heating resistors in each region are respectively connected with the common heating source and the controllers corresponding to each region through the internal electric terminal and the external electric terminal.
5. A plasma processing apparatus, comprising:
a reaction chamber;
an upper electrode positioned at the top of the reaction chamber;
the heating device according to any one of claims 1 to 4, for heating the upper electrode.
6. The plasma processing apparatus according to claim 5, wherein the upper electrode comprises a mounting substrate positioned at a top of the reaction chamber and a gas shower head positioned below the mounting substrate; the plasma processing apparatus further includes: the base is positioned at the bottom of the reaction cavity and is opposite to the gas spray head; the heating device is used for heating the mounting substrate.
7. A method of operating a heating apparatus for a plasma processing apparatus as claimed in any one of claims 1 to 4, comprising:
the common heating source is utilized to simultaneously carry out power adjustment on a plurality of heating resistors;
the heating resistor is used for simultaneously heating along the scattering shape of the circular ring so as to control the temperature of the upper electrode;
and detecting the critical dimension of the etched wafer, and completing heating when the critical dimension is symmetrically distributed on different phase angles.
8. The method of claim 7, wherein the critical dimension of the etched wafer is detected, and when the critical dimension is asymmetrically distributed at different phase angles, the controller is used to adjust the heating condition of the heating resistors in the corresponding areas, so as to realize the symmetrical distribution of the critical dimension and complete the heating, wherein the ring surrounded by the heating resistors is circumferentially divided into a plurality of areas, and each area corresponds to one controller.
9. The method of claim 8, wherein the common heating source dynamically learns the PID value of the common heating source to achieve the P value, the I value and the D value of the specific temperature according to PID control software before the common heating source performs power adjustment.
10. The method of claim 9, wherein the common heating source is dynamically controlled according to the PID value, and the common heating source simultaneously performs power adjustment on a plurality of heating resistors to control the temperature of the upper electrode.
11. The method of claim 10, wherein the controller sets a default power for the independent heating source, and the independent heating source increases or decreases the power of the heating resistor of the corresponding zone based on the default power to adjust the heating condition of the independent heating source to compensate for the asymmetric distribution of the critical dimension.
12. The method of claim 9, wherein the heating resistor is a variable resistor, the common heating source is dynamically controlled by the heating resistor according to the PID value, and the common heating source simultaneously provides the same voltage to a plurality of variable resistors to realize heating to control the temperature of the upper electrode.
13. The method of claim 12, wherein the control terminal of the variable resistor adjusts the resistance of the variable resistor of the corresponding region to adjust the power of the corresponding region, thereby adjusting the heating of the corresponding region to compensate for the asymmetric distribution of the critical dimension.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010468388.3A CN113745082B (en) | 2020-05-28 | 2020-05-28 | Plasma processing device, heating device thereof and working method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010468388.3A CN113745082B (en) | 2020-05-28 | 2020-05-28 | Plasma processing device, heating device thereof and working method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113745082A CN113745082A (en) | 2021-12-03 |
| CN113745082B true CN113745082B (en) | 2023-10-31 |
Family
ID=78724176
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010468388.3A Active CN113745082B (en) | 2020-05-28 | 2020-05-28 | Plasma processing device, heating device thereof and working method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113745082B (en) |
Citations (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11307521A (en) * | 1998-04-20 | 1999-11-05 | Sharp Corp | Plasma cvd equipment and its use |
| JP2001267249A (en) * | 2000-03-16 | 2001-09-28 | Hitachi Kokusai Electric Inc | Device for producing semiconductor |
| JP2001274142A (en) * | 2000-03-27 | 2001-10-05 | Shin Etsu Chem Co Ltd | Silicon ring for plasma treating system |
| JP2007096189A (en) * | 2005-09-30 | 2007-04-12 | Epson Imaging Devices Corp | Method for managing plasma cvd device |
| KR20080107261A (en) * | 2007-06-05 | 2008-12-10 | 도쿄엘렉트론가부시키가이샤 | Plasma processing apparatus, electrode temperature adjustment apparatus, and electrode temperature adjustment method |
| CN101656194A (en) * | 2008-08-21 | 2010-02-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma cavity and temperature control method thereof |
| CN202058689U (en) * | 2011-05-25 | 2011-11-30 | 中微半导体设备(上海)有限公司 | Heating device for plasma processor |
| CN102737945A (en) * | 2011-03-31 | 2012-10-17 | 东京毅力科创株式会社 | Plasma processing apparatus, and plasma processing method |
| CN102810447A (en) * | 2011-05-31 | 2012-12-05 | 细美事有限公司 | Apparatus for treating substrate |
| CN202954089U (en) * | 2012-12-06 | 2013-05-29 | 光达光电设备科技（嘉兴）有限公司 | Chemical vapor deposition device and carrying mechanism for same |
| CN103155118A (en) * | 2010-10-19 | 2013-06-12 | 应用材料公司 | Chamber lid heater ring assembly |
| CN103811296A (en) * | 2012-11-14 | 2014-05-21 | 中微半导体设备(上海)有限公司 | Critical size control system |
| WO2015030457A1 (en) * | 2013-08-28 | 2015-03-05 | (주)젠 | Plasma apparatus for vapor phase etching and cleaning |
| CN104681380A (en) * | 2013-11-29 | 2015-06-03 | 中微半导体设备(上海)有限公司 | Electrostatic chuck and plasma processing chamber thereof |
| CN108028221A (en) * | 2016-07-19 | 2018-05-11 | 日本碍子株式会社 | Electrostatic chuck heater |
| CN110352479A (en) * | 2017-06-19 | 2019-10-18 | 应用材料公司 | Semiconductor processing chamber temperature device in situ |
| CN110389607A (en) * | 2018-04-23 | 2019-10-29 | 东京毅力科创株式会社 | Temprature control method |
| CN110519905A (en) * | 2018-05-21 | 2019-11-29 | 北京北方华创微电子装备有限公司 | Temperature control device and plasma apparatus |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7075031B2 (en) * | 2000-10-25 | 2006-07-11 | Tokyo Electron Limited | Method of and structure for controlling electrode temperature |
| US20020100557A1 (en) * | 2001-01-29 | 2002-08-01 | Applied Materials, Inc. | ICP window heater integrated with faraday shield or floating electrode between the source power coil and the ICP window |
| US20110168673A1 (en) * | 2008-07-04 | 2011-07-14 | Tokyo Electron Limited | Plasma processing apparatus, plasma processing method, and mechanism for regulating temperature of dielectric window |
| JP5459907B2 (en) * | 2010-01-27 | 2014-04-02 | 東京エレクトロン株式会社 | Evaluation apparatus for substrate mounting apparatus, evaluation method therefor, and evaluation substrate used therefor |
| JP6276919B2 (en) * | 2013-02-01 | 2018-02-07 | 株式会社日立ハイテクノロジーズ | Plasma processing apparatus and sample stage |
| KR20170127724A (en) * | 2016-05-12 | 2017-11-22 | 삼성전자주식회사 | Plasma processing apparatus |
| JP7158131B2 (en) * | 2017-05-30 | 2022-10-21 | 東京エレクトロン株式会社 | Stage and plasma processing equipment |
-
2020
- 2020-05-28 CN CN202010468388.3A patent/CN113745082B/en active Active
Patent Citations (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11307521A (en) * | 1998-04-20 | 1999-11-05 | Sharp Corp | Plasma cvd equipment and its use |
| JP2001267249A (en) * | 2000-03-16 | 2001-09-28 | Hitachi Kokusai Electric Inc | Device for producing semiconductor |
| JP2001274142A (en) * | 2000-03-27 | 2001-10-05 | Shin Etsu Chem Co Ltd | Silicon ring for plasma treating system |
| JP2007096189A (en) * | 2005-09-30 | 2007-04-12 | Epson Imaging Devices Corp | Method for managing plasma cvd device |
| KR20080107261A (en) * | 2007-06-05 | 2008-12-10 | 도쿄엘렉트론가부시키가이샤 | Plasma processing apparatus, electrode temperature adjustment apparatus, and electrode temperature adjustment method |
| CN101656194A (en) * | 2008-08-21 | 2010-02-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma cavity and temperature control method thereof |
| CN103155118A (en) * | 2010-10-19 | 2013-06-12 | 应用材料公司 | Chamber lid heater ring assembly |
| CN102737945A (en) * | 2011-03-31 | 2012-10-17 | 东京毅力科创株式会社 | Plasma processing apparatus, and plasma processing method |
| CN202058689U (en) * | 2011-05-25 | 2011-11-30 | 中微半导体设备(上海)有限公司 | Heating device for plasma processor |
| CN102810447A (en) * | 2011-05-31 | 2012-12-05 | 细美事有限公司 | Apparatus for treating substrate |
| CN103811296A (en) * | 2012-11-14 | 2014-05-21 | 中微半导体设备(上海)有限公司 | Critical size control system |
| CN202954089U (en) * | 2012-12-06 | 2013-05-29 | 光达光电设备科技（嘉兴）有限公司 | Chemical vapor deposition device and carrying mechanism for same |
| WO2015030457A1 (en) * | 2013-08-28 | 2015-03-05 | (주)젠 | Plasma apparatus for vapor phase etching and cleaning |
| CN104681380A (en) * | 2013-11-29 | 2015-06-03 | 中微半导体设备(上海)有限公司 | Electrostatic chuck and plasma processing chamber thereof |
| CN108028221A (en) * | 2016-07-19 | 2018-05-11 | 日本碍子株式会社 | Electrostatic chuck heater |
| CN110352479A (en) * | 2017-06-19 | 2019-10-18 | 应用材料公司 | Semiconductor processing chamber temperature device in situ |
| CN110389607A (en) * | 2018-04-23 | 2019-10-29 | 东京毅力科创株式会社 | Temprature control method |
| CN110519905A (en) * | 2018-05-21 | 2019-11-29 | 北京北方华创微电子装备有限公司 | Temperature control device and plasma apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113745082A (en) | 2021-12-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10685862B2 (en) | Controlling the RF amplitude of an edge ring of a capacitively coupled plasma process device | |
| US10177050B2 (en) | Methods and apparatus for controlling substrate uniformity | |
| KR102383779B1 (en) | Control of on-wafer cd uniformity with movable edge ring and gas injection adjustment | |
| US10910227B2 (en) | Bottom and side plasma tuning having closed loop control | |
| US10544508B2 (en) | Controlling temperature in substrate processing systems | |
| KR101124754B1 (en) | Inductively coupled plasma processing apparatus | |
| JP5606565B2 (en) | Variable volume plasma processing chamber and method thereof | |
| US20090215201A1 (en) | Method for controlling spatial temperature distribution across a semiconductor wafer | |
| KR20010071880A (en) | Method and apparatus for plasma processing | |
| JP6909824B2 (en) | Substrate processing equipment, semiconductor equipment manufacturing methods and programs | |
| KR102435138B1 (en) | Plasma processing apparatus and adjustment method thereof | |
| TW201724257A (en) | Plasma processing apparatus for improving etching symmetry, and regulating method capable of improving stability of a contact capacitor between a limiting ring and a grounding ring and improving etching symmetry | |
| KR101753620B1 (en) | Controlling azimuthal uniformity of etch process in plasma processing chamber | |
| CN113745082B (en) | Plasma processing device, heating device thereof and working method thereof | |
| JP2023546200A (en) | cold edge low temperature electrostatic chuck | |
| KR20210022879A (en) | Unit for supporting substrate and system for treating substrate with the unit | |
| CN113130279A (en) | Lower electrode assembly, plasma processing device and working method thereof | |
| JP2003234169A (en) | Induction heating equipment and induction heating method | |
| TW202040627A (en) | Plasma processing device in which the loss of the focus ring in the edge ring as the etching process proceeds can be compensated in sections | |
| JP2020161541A (en) | Substrate processing device, semiconductor device manufacturing method and program | |
| US11270903B2 (en) | Multi zone electrostatic chuck | |
| US20220157578A1 (en) | Temperature regulator and substrate treatment apparatus | |
| CN112951694A (en) | Plasma processing apparatus and method for processing semiconductor wafer | |
| CN114141663A (en) | Semiconductor process chamber and lower electrode potential control method | |
| KR20230135557A (en) | plasma processing device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |