WO2015030457A1 - Plasma apparatus for vapor phase etching and cleaning - Google Patents

Plasma apparatus for vapor phase etching and cleaning Download PDF

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Publication number
WO2015030457A1
WO2015030457A1 PCT/KR2014/007911 KR2014007911W WO2015030457A1 WO 2015030457 A1 WO2015030457 A1 WO 2015030457A1 KR 2014007911 W KR2014007911 W KR 2014007911W WO 2015030457 A1 WO2015030457 A1 WO 2015030457A1
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Prior art keywords
plasma
substrate
gas
cleaning
region
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PCT/KR2014/007911
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French (fr)
Korean (ko)
Inventor
김호식
임홍주
김규동
나정균
신우곤
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(주)젠
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Priority to KR1020130102625A priority Critical patent/KR101574740B1/en
Priority to KR10-2013-0102625 priority
Priority to KR10-2014-0109504 priority
Priority to KR1020140109504A priority patent/KR101590566B1/en
Application filed by (주)젠 filed Critical (주)젠
Publication of WO2015030457A1 publication Critical patent/WO2015030457A1/en

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211Antennas, e.g. particular shapes of coils
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334Etching

Abstract

The present invention relates to a plasma apparatus for vapor phase etching and cleaning. The plasma apparatus for vapor phase etching and cleaning of the present invention comprises: a reactor body for treating a substrate to be treated; a direct plasma generation region which is located within the reactor body and in which a process gas flows and plasma is directly induced so as to dissociate the process gas; a plasma inducing assembly for inducing the plasma to the direct plasma generation region; a mixing region which is located within the reactor body and in which the process gas received from the direct plasma generation region is mixed with the vaporized gas received from the outside of the reactor body so as to form reactive species; a first gas distribution baffle which is provided between the direct plasma generation region and the mixing region and has a plurality of first through-holes; a substrate treating region which is located within the substrate treating region and in which the substrate to be treated, is treated by the reactive species received from the mixing region; and a second gas distribution baffle which is provided between the mixing region and the substrate treating region and has a plurality of second through-holes so as to enable the inflow of the reactive species from the mixing region to the substrate treating region. The plasma apparatus for vapor phase etching and cleaning of the present invention can treat the substrate to be treated, without damage due to electrification by forming the reactive species so as to treat the substrate to be treated. In addition, the plasma apparatus for vapor phase etching and cleaning of the present invention does not generate byproducts and has high selectivity when cleaning the substrate to be treated. Also, a surface of the substrate to be treated, can be uniformly treated by uniformly providing the vaporized gas for the vapor phase cleaning. The temperature of the vaporized gas can be adjusted by using a heating wire included in the gas distribution baffle for injecting the vaporized gas. In addition, the substrate to be treated, can be treated in a fine pattern processing step by removing damage due to the electrification. Furthermore, the plasma is uniformly generated by uniformly diffusing the process gas into a chamber through a diffuser plate. The substrate such as a small-sized substrate or a large-sized substrate can be uniformly treated by uniformly generating the large-area plasma. In addition, a diffusion degree of the process gas can be adjusted by adjusting an installation space of the diffuser plate. Also, a gas decomposition rate is increased according to an increase of the duration of the process gas so as to increase the etching amount. Additionally, a substrate fixing type can be selected according to the process atmosphere and environment by further including a hybrid chuck and selectively driving one between an electrostatic type or a vacuum type for supporting the substrate according to the process for treating the substrate. In addition, there is no need for the substrate treating process or exchanging of the chuck during a device failure by selecting the other type and fixing the substrate when one type is not used. Furthermore, productivity is increased and repair cost and production costs are reduced.

Description

[Correction of 16.12.2014 under Rule 26] The plasma etching apparatus for a gas phase and washed

The present invention relates to a plasma apparatus for gas phase etching and cleaning, more particularly, gas phase etching and cleaning by direct use of highly reactive atoms or molecules of a selective cleaning by producing a thin film with a direct reaction of the substrate surface for a plasma device.

Semiconductors are a key component to an active electronic device having a function, such as storage of electrical signal amplification, switching, and traction of highly integrated, high performance, high value-added industry, and the system service industry is based on the low-power driving the digital information age.

A semiconductor manufacturing process is largely accounted for the entire process can be divided into (wafer processing step), and after step (assembly process and the inspection step), a front-end device market share about 75%. And a dry etching process in a dual-called wet cleaning apparatus and the plasma etching to form the second largest market in a total amount of 22.6%. There is to create a semiconductor process when each component and the circuit for electrically connecting it to a pattern (circuit design) used the system load drawn on the thin film (thin film) of the various layers in the semiconductor, wherein the substrate film is formed (wafer ) is etched (etching) step to the process of removing unnecessary portions of the circuit pattern is exposed on top. An etching process, there are a wet process using a dry etching process and cleaning solution using a plasma.

Dry etching process is one of the physical, chemical etching by a normal incidence by the ion particle current (Ion Flux) using a plasma. Therefore, depending on the device design As increasingly smaller process emerged a problem that damage to the pattern. Wet process is a method to lock or long wall for universally on Technology certain period of time the wafer in a container containing the cleaning solution to be used, and while rotating the wafer at a constant speed spray a cleaning solution to remove the unnecessary portions of the wafer surface. However, the wet process, there is a large amount of waste water is generated, and three quantitative control and difficult disadvantages cleaning uniformity control. Also it is larger or smaller than intended on the pattern after washing designed according to the isotropic etching became difficult the processing of fine pyeteon.

Recently, further according to the Quick the increased demand for the device and a high-capacity memory with the processing speed and the size of the unit elements of the semiconductor chip still less, and thus the spacing of the pattern formed on the wafer surface is still narrower, the gate insulating film of the element the thickness is getting thinner. This is a problem that did not matter does not appear during the semiconductor manufacturing process of the past are being increasingly highlighted accordingly. Typical problems exhibited by plasma of them is damaged (Plasma Damage) caused by the charging. Damage due to charging will affect the characteristics and reliability of a number of devices, including transistors in all processes that the exposed wafer surface as the miniaturization of semiconductor devices advances. Thin film damage due to the charging caused by the plasma is shown in primarily etching process. Damage due to charging are the efforts to solve this problem, the problem that occurs when a dry etching process or wet process is required.

It is also an effort to provide a uniform plasma and thus, it is large, the size of the substrate is required.

A chuck (chuck) substrate support to hold the conventional substrate to be processed is driven by any one of the method of the electrostatic method using an electrostatic force (ElectroStatic Chuck, ESC) or vacuum method using a vacuum force (vacuum chuck). Briefly will be described for each method, a vacuum method is a substrate to be processed by inhaling after mounting the target substrate on the upper surface air of the vacuum chuck (vacuum chuck) to proceed to the semiconductor manufacturing process in the most widely been used method It is fixed. Vacuum methods are in this case the semiconductor manufacturing process is performed in a vacuum environment, the vacuum force is weakened to suck the air it is difficult to secure the substrate to be processed problem. Electrostatic is fixed to the substrate using an electrostatic force of the electrostatic chuck (ElectroStatic Chuck, ESC). The electrostatic chuck by an electrostatic force, regardless of the atmosphere in the minimizes the generation of particulate contamination caused by contact of the substrate with the clamp (clamp) and prevent the deformation of the substrate opposed to a vacuum chuck and a chamber fixed to the substrate It has the advantage that you can.

An electrostatic chuck and a vacuum chuck described above is operated in either one of two ways electrostatic method or a vacuum system to hold the substrate to be processed. Therefore it followed this constraint should proceed with the process according to the chuck type is installed in the process chamber. For example, the process chamber is a vacuum chuck installed treatment step of the vacuum ambience is be hard to proceed. Also is a problem when the chuck caused to operate in a manner interrupting the process operation, or the low efficiency resulting from the production, if you need to replace the chuck increases the cost of repairs.

An object of the present invention is to prevent damage caused by charging the film and jeokjeop direct reaction of the substrate surface provide a plasma apparatus for the gas phase etching and cleaning to the cleaning.

A further object of the present invention is to provide a plasma apparatus for the gas phase etching and cleaning capable of uniformly forming a plasma by uniformly spread the process gases.

Aspect of the present invention for achieving the above described technical problem is related to a plasma apparatus for gas phase etching and cleaning. A plasma device for a vapor phase etching and cleaning of the present invention the reactor body for processing a substrate to be processed; The process gas is directly plasma generation region in the reactor body and introduced to the plasma is derived directly dissociating the process gas; Plasma-induced assembly of a plasma induced by the direct plasma generating region; A mixing zone in the reactor to form the reactive species that the vaporized gas flows from the outside of said direct the process gas and the reactor body flows from the plasma generation region is a mixed body; The direct and provided between the plasma generation region and the mixing zone the first gas distribution baffle having a plurality of first through-holes; A substrate processing region within the reactor body which is the substrate processed by the reactive species flows from the mixing zone; And it is provided between the mixing region and the substrate processing region, and a second gas distribution baffle having a plurality of second through holes so that the perforated paper can be introduced into the reaction as the substrate processing region in the mixed region.

And wherein the plasma device is fixed is installed in the gas inlet at which the process gas flows bar; And the fixed bar is provided, and a diffuser plate with a distribution plate for a plate-like process gas to diffuse within the gas inlet and is provided to face the process gas directly to the plasma generating region from entering.

Also, the distribution plate includes a plurality of through-holes.

And the second gas distribution baffle comprises a plurality of vaporized gas injection hole for injecting vaporized gas into the mixing region.

In addition, the first and second gas distribution baffle comprises a heating wire on either or both.

Further, the plasma-induced assembly includes a cooling channel.

In addition, the gasification gas is vaporized H 2 O.

Further, the plasma apparatus comprises a body portion having a dielectric layer on the top surface on which the substrate to be processed mounted; It is provided in the body portion at least one electrode unit which is driven receives application of a voltage; And so as to be in contact with the substrate to be processed it is mounted and includes a substrate support comprising at least one hybrid line formed in the body portion, by actuating the said electrode fixed to the substrate to be processed on the body portion or through the hybrid line and fixing the substrate to be processed by the suction air to the body portion.

Further, the substrate support is formed from a polyimide.

And comprises a refrigerant circulation path formed by the plurality of the hybrid lines connected to the dielectric layer, the hybrid line and a coolant for the target substrate cooling via the refrigerant circulation path when the substrate to be processed and fixed to actuating the said electrodes the circulated.

A plasma device for a vapor phase etching and cleaning of the present invention the reactor body for processing a substrate to be processed; The process gas is directly plasma generation region in the reactor body and introduced to the plasma is derived directly dissociating the process gas; Plasma-induced assembly of a plasma induced by the direct plasma generating region; A substrate processing region within the reactor body in which the vaporized gas flows from the outside of the reactor body and direct the process gas flows from the plasma generating region is mixed to form a reactive species, wherein the target substrate processed by reactive species; And a gas distribution baffle having a plurality of through-holes for the through-the direct and provided between the plasma generation region and the substrate processing area uniform plasma distribution.

And wherein the plasma device is fixed is installed in the gas inlet at which the process gas flows bar; And the fixed bar is provided, and a diffuser plate with a distribution plate for a plate-like process gas to diffuse within the gas inlet and is provided to face the process gas directly to the plasma generating region from entering.

Also, the distribution plate includes a plurality of through-holes.

And to the gas distribution baffle comprises a plurality of vaporized gas injection hole for injecting the vaporized gas flows from the outside into the substrate processing region.

In addition, the gas distribution baffle comprises a heating wire.

Further, the plasma-induced assembly includes a cooling channel.

In addition, the gasification gas is vaporized H 2 O.

Further, the plasma apparatus comprises a body portion having a dielectric layer on the top surface on which the substrate to be processed mounted; It is provided in the body portion at least one electrode unit which is driven receives application of a voltage; And so as to be in contact with the substrate to be processed it is mounted and includes a substrate support comprising at least one hybrid line formed in the body portion, by actuating the said electrode fixed to the substrate to be processed on the body portion or through the hybrid line and fixing the substrate to be processed by the suction air to the body portion.

Further, the substrate support is formed from a polyimide.

And comprises a refrigerant circulation path formed by the plurality of the hybrid lines connected to the dielectric layer, the hybrid line and a coolant for the target substrate cooling via the refrigerant circulation path when the substrate to be processed and fixed to actuating the said electrodes the circulated.

According to the plasma unit for the gas phase etching and cleaning of the present invention, it is possible to form the reactive species to process the substrate to be processed without damage due to the charging process that the target substrate. In addition, no by-products during balsaengdoe object to be cleaned substrate has a high selection ratio advantages. In addition, it is possible to uniformly process the surface of the substrate by providing a uniform vaporized gas for the vapor washing. Using a heating wire provided in the gas distribution baffle for injecting the vaporized gas can control the temperature of the vaporized gas. In addition, no damage caused by the charging can be processed of the substrate in the fine pattern processing step. In addition, since the process gas is diffused uniformly into the chamber through a diffuser plate to generate the plasma is uniform. It is possible to uniformly generate a plasma having a large area, even when processing a large substrate as well as the small board is possible to uniformly process the substrate. In addition, it is possible to adjust the spacing of the diffuser plate to control the degree of diffusion of the processing gases. And also increases the duration of the processing gas is raised to increase the chiryang a gas decomposition rate (Etch amount). Also because the hybrid chuck is further provided with a selection of an electrostatic method or a vacuum system it may be driven to support a substrate in accordance with the step of treating a substrate selected substrate holding system according to the process atmosphere and environment. Also, if you do not use one because there is no way to secure the board to choose another way to stop the substrate processing upon failure or the need to replace the chuck. Also it has an effect that increases the productivity and repair costs and production costs are reduced.

1 is a view showing a plasma processing apparatus according to a first embodiment of the present invention.

2 is a view briefly showing the structure of the coupling capacitance electrode assembly of Figure 1;

Figure 3 is a plan view showing a lower portion of the second gas distribution baffle.

Figure 4 is a plan view showing the upper portion of the second gas distribution baffle.

Figure 5 is a flow chart of a plasma processing method using a plasma processing apparatus according to the first embodiment.

6 is a view showing a plasma processing apparatus according to a second embodiment of the present invention.

7 is a flow chart of a plasma processing method using a plasma processing apparatus according to the second embodiment.

Figure 8 is a view showing a plasma processing apparatus according to a third embodiment of the present invention.

Figure 9 is a top plan view of a diffuser plate.

10 is a flow chart of a plasma processing method using a plasma processing apparatus according to a third embodiment.

11 is a graph showing the plasma uniformity in accordance with the spacing of the diffuser plate.

12 is the present invention is a diagram showing a plasma processing apparatus according to the fourth embodiment.

13 is a flow chart of a plasma processing method using a plasma processing apparatus according to the fourth embodiment.

14 is a view showing the hybrid flat chuck according to an embodiment of the present invention.

Figure 15 is a diagram showing a hybrid cross section of the chuck 14.

16 is a flow diagram of the hybrid operating chuck method.

In order to fully understand the present invention will be described with reference to the accompanying drawings a preferred embodiment of the present invention. Embodiment of the invention may be modified in various forms, and the scope of the present invention is not to be construed as limited to the embodiments described in detail below. This example is being provided in order to more fully describe the present invention to those having ordinary skill in the art. Therefore, the shape of the elements in the drawings may be exaggerated to emphasize a more clear description. The same configuration in each of the drawings It should be noted that this is the case shown by the same reference numerals. Detailed description of known functions and configurations that are determined to unnecessarily obscure the subject matter of the present invention is omitted.

1 is a view showing a plasma processing apparatus according to a first embodiment of the present invention.

1, the plasma processing apparatus 10 according to the present invention the reactor body 12, the capacitive coupling electrode assembly 20, the first gas distributing baffle 40, a second gas distribution baffle 50 and the power source consists of the source (3). The reactor body 12 is provided with a substrate support (2) is placed a substrate to be processed (1) inside. Reactor body reactor 12, the upper part is provided with a gas inlet (14) in which the process gas is supplied for plasma processing, the process gas supplied from the process gas supply source 15 through the gas inlet 14 of the body 12 It is supplied to the interior. Gas inlet 14 is provided with a gas ejection head 30 is provided with a plurality of gas injection holes 32 will be supplied to the plasma generating region 200 direct the process gas through the gas injection holes 32. Gas-jet head 30 is connected to the gas injection port 14 to inject the process gas into the lower portion of the dielectric window 28. The lower portion of the reactor body 12 is provided with a gas discharge port 16 is connected to an exhaust pump 17. The lower portion of the reactor body 12, surrounding the substrate support (2) The exhaust hole venting zone (75, 72) is formed is formed. Exhaust holes 72 may be of the continuous opening forms, it may be formed a plurality of through holes. Also it is provided with at least one exhaust baffle (74) for uniformly discharging the exhaust gas exhaust region (75).

The reactor body 12 may be made of a metal material such as aluminum, stainless steel, copper. Or a coated metal for example, and may be made of anodized aluminum, nickel plated aluminum. Or it may be made of refractory metal (refractory metal). In addition it is possible to alternatively the reactor body 12 also made of electrically insulating material such as quartz, ceramic, in whole or in part. Thus, the reactor body 12 may be manufactured in any material suitable for performing the intended plasma process. The structure of the reactor body 12. Depending on the substrate (1) and a suitable structure, for example, for the uniform generation of plasma, the circular structure and the rectangular structure, and in addition may have a structure of any shape.

The substrate (1) is, for example, are the substrate such as a semiconductor device, a display device, a wafer substrate, a glass substrate, a plastic substrate for the production of various devices such as solar cells. A substrate support (1) may be connected to a bias power source (6). It may also be biased to each other are electrically connected to the two bias the substrate support (2) power supply is via the impedance matching device (7) for supplying different radio frequency power. Or substrate support 2 may be implemented as a modified structure having a zero potential (zero potential) without the supply of the bias power supply. A substrate support (2) is provided with lift pins 60 is connected to the lift pin driving unit 62 to lift or lower the target substrate (1) while supporting a target substrate (1). A substrate support (2) may include a heater.

Capacitive coupling electrode assembly 20 to achieve the ceiling of the reactor body 12 is provided at the top of the reactor body 12. Is the capacitive coupling electrode assembly 20 is connected to ground 21. The first electrode 22 and the power source (3) connected to and a second electrode (24) being supplied with the power frequency. A first electrode (22) forms a ceiling of the reactor body 12 and is connected to ground 21. The first electrode 22 is formed as a plate shape, and the reactor has a plurality of body protrusions (22a) protruding into the interior (12) at regular intervals. The center of the first electrode 22 is provided with a gas inlet (14). The second electrode 24 is provided between the first electrode 22 and a predetermined projection (22a) to be spaced apart at equal intervals. The second electrode 24 is partially fitted into the first electrode 22. Here, the second electrode 24 is the second electrode 24 is the power source (3) is connected to the power supply electrode (24a) and the power supply electrode (24a) that receive the radio frequency power is provided a first electrode (22) is inserted consists of a insulation portion (24b) that are installed. Insulating portion (24b) it may be formed in a shape that wraps around the entire power supply electrode (24a). The first electrode 22 and second electrode 24 to generate a direct capacitively coupled plasma in the plasma generating region. In the present invention, but by using the capacitive coupling electrode assembly 20 in a configuration for guiding the plasma, it is also possible to use a radio frequency antenna configured to generate the inductively coupled plasma. Power source (3), through the impedance matching device 5 is connected to the second electrode 24 supplies a radio frequency power source. The second electrode 24 is a DC power source (4) can be selectively coupled to.

2 is a view briefly showing the structure of the coupling capacitance electrode assembly of Figure 1;

2, the capacitive coupling electrode assembly 20 comprises a first electrode, the second electrode 24 connected to 22 and the power source (3) connected to the ground 21 is provided as a helical structure. Power supply electrode (24a) of the projection (22a) and the second electrode 24 of the first electrode 22 forms a spiral structure and spaced at a predetermined interval. A protrusion (22a) of the second electrode 24, the power electrode (24a) and the first electrode 22 in spaced, facing, and it can produce a uniform plasma. Here, the first and second electrodes 22 and 24 may be provided also in a parallel electrode, it may be arranged in various structures. Although the first and second electrodes (22, 24) in the present invention is shown in a rectangular shape, it can be modified in a variety of forms, such as triangle, circle.

Between the capacitive coupling electrode assembly 20 and the first gas distribution baffle 40 is provided with a dielectric window 28. A dielectric window (28) is capable of semi-permanent use and steel to the charging damage (Plasma Damage).

Referring back to Figure 1, the second gas distribution baffle 50 is provided in the upper portion of the substrate support 2 in a configuration for injecting the vaporized gas to the mixing zone 220. A second gas distribution baffle 50 has a plurality of vaporizing the gas-injection holes (51 formed in the vaporized gas provided in the plurality of second through-formed through-hole 52 and the second gas distribution baffle 50 (53) ) it consists. Vaporized gas injection hole 51 is formed so as to be injected into the mixing area 220 which is located on top of the second gas distribution baffle 50. A second gas distribution baffle 50 is provided with a vaporized gas supplied to the gasification gas movement inside 53, a plurality of vaporized gas injection hole 51 is formed in a gasification gas supply (53). Vaporized gas mixing region (220 through the vaporized gas injection hole 51 into the mixing region 220 directly be fed, and vaporizing gas supplied through the one or more gas injection nozzles from the vaporized gas source (56) (53) ) it may be supplied.

The reactor body 12, there may be further provided with a first gas distribution baffle 40 to evenly distribute the plasma directly on the plasma generating region 200. The First to through the gas distribution baffle 40 is directly plasma-generating region 220, and is provided between the mixing region 220, through a plurality of first through-holes 42 formed uniform the process gas dissociated by the plasma the allocation. Directly generated in the plasma generating region 200, the plasma is uniformly distributed in the mixing zone 220 through a first gas distribution baffle (40) to dissociate the process gas introduced into the chamber. At this time, the second gas distribution through the vaporized gas-injection holes 51 of the baffle 50 the vaporized gas is supplied to the mixing area 220, the process gas dissociation and the vaporized gas is mixed reactive species (reactive sepcies) formed do. Formed reaction species are the second is made uniform by the second through hole 52, a substrate processing region 230 in the substrate to be processed (1) through the gas distribution baffle 50 distribution. The second through the distributed reactive species through the holes 42 is absorbed and by-products of the substrate (1) is removed from the heat treatment process. The washing in this manner is referred to as vapor cleaning (Vapor Phase etching).

Vapor cleaning by producing a thin film as a direct response selective etching and cleaning of the surface of the wet cleaning and dry etching advantage with the atoms or molecules with high reactivity at a low temperature vacuum chamber, the cleaning method with direct the blood handler, the substrate 1 cause. Vapor cleaning is high selectivity, an advantage is not easy at all three quantitative control and charging damage (Plasma Damage). There are also generally without creating by-product, even if the make possible a sufficiently removed by a simple method than wet cleaning benefits. After the formation of the reactive species in the mixing area 220, because the distribution of the reactive species with the substrate 1, the substrate processing region 230 in the well as there is a reaction of the plasma with the vaporized gas can than be made efficiently, as well, a second gas distribution and uniform distribution of the reactive species through the second through holes 52 of the baffle 50 vivo can uniformly process the entire substrate to be processed (1).

Vaporized gas to form the reactive species uses the vaporized water (H 2 O). Roneun center etching gas (etchant gas Main) for generating a plasma is NF3, CF4 (Fluorine series), Carrier gas is He, Ar, etc. N2 (inert gas) is used. Each process pressure to m torr to several hundred torr is preferred.

First and second gas distribution baffle (40, 50) may be further included a heating wire as the heating means for regulating the temperature. Here, the heating means may be formed in both the first and second gas distribution baffle (40, 50) may be formed only one hanae. In particular, the second heating coil which is formed in the gas distribution baffle (50) when supplied with electric power from the power source 57 is vaporized by applying continuous heat to the water (H 2 O) vaporized in by the 53 to the vaporized gas supply water (H 2 O) is to maintain the gasification conditions is not liquefied and to reach the target substrate (1). In addition, there is a second gas distribution baffle 50 is provided with sensors capable of measuring the temperature of the vaporized gas can be further provided.

The plasma processing apparatus 10 may be provided with a cooling channel 26 in the interior of the first electrode 22 connected to ground 21. Cooling channel 26 is to be lowered to maintain a constant temperature the temperature of the first electrode 22 from overheating when supplied to the cooling water from the cooling water supply source (27).

3 is a plan view showing a lower portion of the second gas distribution baffle, Figure 4 is a plan view showing the upper portion of the second gas distribution baffle.

3 and 4, a second through-hole 52 of the gas distribution baffle 50 is formed through the second gas distribution baffle 50. On the other hand, gasification gas injection hole 51 is formed on top of the second gas distribution baffle 50 in the upper part of the gasification gas formed therein (53), that the second gas distribution baffle 50. Therefore, the second in the top of the gas distribution baffle 50, second through holes 52 and the vaporization can determine the gas injection holes 54, in the lower portion of the second gas distribution baffle 50, the second through-holes 52 only you can see. A second through-hole 52 and the vaporized gas injection holes 51 may be the same or different from each other in size. Also vaporized gas injection hole 51 and the second through holes 52 can be the injection of the second gas distribution baffle uniform plasma distribution, and vaporization gas being uniformly formed on the whole (50).

Figure 5 is a flow chart of a plasma processing method using a plasma processing apparatus according to the first embodiment.

5, the process the process gas supplied from the gas supply source 15 is supplied to the plasma generating region 200 directly from the gas ejection head 30 of the plasma processing apparatus (10) (S10). Directly generated in the plasma generating region 200, the plasma is distributed in the mixing zone 220 through a first gas distribution baffle (40) (S11). The reactive species formed by supplying to the mixing zone 220 through the vaporized gas-injection holes 51 of the direct or the second gas distribution baffle 50, the vaporized gas (S12). Formed reaction species are distributed in the second through-hole 52, a mixing zone 220 the substrate 1, the substrate processing region 230, the seating is in through the second gas distribution baffle (50) (S13). It processes the target substrate (1) with the reactive species distribution in the mixing zone (220) (S14).

6 is a view showing a plasma processing apparatus according to a second embodiment of the present invention.

6, the plasma processing apparatus 10 includes a vaporized gas-injection holes 54 is a bar, the other configurations and functions are the first gas distribution baffle 50 is provided formed in the lower is the plasma processing apparatus of the first embodiment and same. Vaporized gas is injected into the substrate processing region 230 that is located the substrate (1) through the vaporized gas injection holes 54. Therefore, the reactive species for substrate processing is formed in the substrate processing region 230, using the reactive species formed is treated with the substrate (1). For the reactive species formed in the substrate processing region 230 includes the mixing zone. Here, the generated directly from the plasma-generating region 200, the plasma is in direct uniform in the plasma generating region 210 is dispensed through the second gas distribution baffle (40).

7 is a flow chart of a plasma processing method using a plasma processing apparatus according to the second embodiment.

7, the process the process gas supplied from the gas supply source 15 is supplied to the plasma generating region 200 directly from the gas ejection head 30 of the plasma processing apparatus (10) (S20). Directly generated in the plasma generating region 200, the plasma is distributed in the substrate processing region 230 through the first and second gas distribution baffle (40, 50) (S21). To form a reactive species to the vaporized gas directly supplied to the substrate or the second treatment region 230 through the vaporized gas-injection holes 51 of the gas distribution baffle (50) (S22). With the reactive species formed in the substrate processing region 230 to process the substrate to be processed (1) (S23).

Figure 8 is a view showing a plasma processing apparatus according to a third embodiment of the present invention.

8, the plasma processing apparatus 10 is provided with a diffuser plate 80 for uniformly diffusing the process gas. Diffuser plate 80 is formed of a ceramic flow uniformly diffused in the reactor body 12, a direct plasma-generating region 200, the process gas flowing into. Diffuser plate 80 is installed so as to be opposed and spaced apart and the gas ejection head 30 in a plate shape. The process gas introduced through the gas injection head 30 there is to be concentrated in the center (center) of the direct plasma-generating region 200, by the diffuser plate 80 is spread over the edge (edge) area. Then, the process gas is the total remaining time increases decomposition rate in the direct plasma-generating region 200 is raised. Since there is a gas-jet head 30, the process gas not decomposed is injected through the present are concentrated in the center of the direct plasma-generating region 200, and is diffused through the diffuser plate 80 is decomposed by the plasma uniformity in the plasma It can achieve a generation. Also it increases the amount of etching (etch amount) of the target etching the silicon dioxide (sio 2). The plasma processing apparatus according to the third embodiment is the same as the plasma processing apparatus of the remaining structures and functions are the first embodiment, except for the diffuser plate 80, a detailed description thereof will be omitted. .

Figure 9 is a top plan view of a diffuser plate.

9, the diffuser plate 80 is formed of a distribution plate 84 is a plate-like attached to the fixed installation which is connected to the gas ejection head 30, the bar 82 and the fixed bar (82). The process gas supplied from the gas ejection head 30 provided on the center of the reactor body 12 is diffused into the surrounding budithimyeo the distribution plate (84). Therefore, the release of plasma formation is directly focused on the center of the plasma generating region 200 may be formed uniformly in the entire of a direct plasma-generating region (200).

Distribution plate 84 may be formed as a single plate without a through hole, a plurality of through holes (86) may be formed. As the process gas is diffused by the distribution plate (84) it is through a plurality of through-holes 86 may be distributed to the lower portion. Stopper 87 and the stopper insert the fixing member 88 into the through-hole 86 may be adjusted to the total quantity of the plurality of through-holes 86 prevent the through hole 86 a. Distribution plate 84 has the diameter of the distribution plate 84 is preferably formed as a one 64Φ ± 10Φ, formed by adjusting the shape and size depending on the shape of the gas ejection head (30).

10 is a flow chart of a plasma processing method using a plasma processing apparatus according to a third embodiment.

10, the process the process gas supplied from the gas supply source 15 is supplied to the plasma generating region 200 directly from the gas ejection head 30 of the plasma processing apparatus (10) (S100). The process gas supply is diffused uniformly in the plasma generating region 200 by the diffuser plate (80) (S110). Directly generated in the plasma generating region 200, the plasma is distributed in the mixing zone 220 through a first gas distribution baffle (40) (S120). The reactive species formed by supplying to the mixing zone 220 through the vaporized gas-injection holes 51 of the direct or the second gas distribution baffle 50, the vaporized gas (S130). Formed reaction species are distributed in the second through-hole 52, a mixing zone 220 the substrate 1, the substrate processing region 230, the seating is in through the second gas distribution baffle (50) (S140). It processes the target substrate (1) with the reactive species distribution in the mixing zone (220) (S150).

11 is a graph showing the plasma uniformity in accordance with the spacing of the diffuser plate.

Referring to Figure 11, it may according to the interval (gap) between the diffuser plate 80 and the gas ejection head 30 to control the plasma uniformity. First, looking out the etching amount (etch amount) and uniformity (uniformity) of the condition in the case where the diffuser plate 80 is not provided (Normal), it appears to 427Å / min 7.5%. As shown in the figure, it can be seen that the center region of the substrate (1) number of the etching amount than the edge region. This means that the plasma generation concentrated in the center area.

On the other hand, looking out the etching amount and uniformity after installing the diffuser plate 80 in the plasma apparatus 10 according to the present invention, the etching amount and uniformity of the case to install the gap (gap) of the diffuser plate 80 is a 5mm If the case of 503Å / min 3.8%, 10mm is of 516Å / min 3.4%, 15mm is represented by a 508Å / min 3.3%. Therefore, it is possible to improve the plasma uniformity over the diffuser plate (80). In addition, because the rate of diffusion and distance difference in the process gas in accordance with the change of the diffuser plate 80, a gap occurs to improve the plasma uniformity by controlling the etching amount via the change in the gap.

12 is the present invention is a diagram showing a plasma processing apparatus according to the fourth embodiment.

12, the plasma processing apparatus 10 is provided with a first gas distribution baffle 50 vaporized gas injection hole 54 is formed at the bottom. Vaporized gas is injected into the substrate processing region 230 that is located the substrate (1) through the vaporized gas injection holes 54. Therefore, the reactive species for substrate processing is formed in the substrate processing region 230, using the reactive species formed is treated with the substrate (1). For the reactive species formed in the substrate processing region 230 includes the mixing zone. Here, the generated directly from the plasma-generating region 200, the plasma is in direct uniform in the plasma generating region 210 is dispensed through the second gas distribution baffle (40). The plasma processing apparatus according to the fourth embodiment is the same as the plasma processing apparatus of the remaining structures and functions, except for the diffuser plate 80 in the second embodiment the description will be omitted.

13 is a flow chart of a plasma processing method using a plasma processing apparatus according to the fourth embodiment.

13, the process the process gas supplied from the gas supply source 15 is supplied to the plasma generating region 200 directly from the gas ejection head 30 of the plasma processing apparatus (10) (S200). The process gas supply is diffused uniformly in the plasma generating region 200 by the diffuser plate (80) (S210). Directly generated in the plasma generating region 200, the plasma is distributed in the substrate processing region 230 through the first and second gas distribution baffle (40, 50) (S220). To form a reactive species to the vaporized gas directly supplied to the substrate or the second treatment region 230 through the vaporized gas-injection holes 51 of the gas distribution baffle (50) (S230). With the reactive species formed in the substrate processing region 230 to process the substrate to be processed (1) (S240).

A substrate support provided in the plasma processing apparatus 10 (2) is operated as either one of two ways by an electrostatic method or a vacuum system to hold the substrate to be processed (1). The substrate support according to the present invention (2) may be of a hybrid chuck (Chuck) that can be driven by selecting a method of electrostatic method or a vacuum method. This hybrid chuck is applied to both the plasma processing apparatus 10 according to the first, the second, the third and fourth embodiments.

Hereinafter will be described a hybrid chuck organization and method of operation.

Figure 14 is a diagram showing the hybrid flat chuck according to an embodiment of the present invention, Figure 15 is a diagram showing a hybrid cross section of the chuck 14.

When 14 and 15, the hybrid chuck according to the invention is labeled as a substrate support 100 for supporting a target substrate (1). The substrate support 100 is of a body 102, first and second electrode parts 112 and 114, and a hybrid line 106.

Body portion 102 is provided in the plasma chamber as a bottom portion which the substrate (1) is secured to the upper. A body portion 102 can be modified in a variety of forms, such as round or square, depending on the type of the substrate (1) to be treated. Body section 102 is provided with lift pins 104 for lifting or lowering the target substrate (1) while supporting a target substrate (1). The substrate (1) is, for example, a glass substrate for the production of a silicon wafer substrate or liquid crystal display or a plasma display for fabricating a semiconductor device.

First and second electrode parts 112 and 114 are formed on the upper surface that the substrate (1) mounted on the body 102. Claim 1, the second electrode portion, the dielectric layer 108 is formed on the top surface of (112, 114) dielectric layer 108 over the substrate (1) it is seated. Dielectric layer 108 may be formed as a plate-like, first, may be formed in the same shape as the second electrode portion (112, 114). First and second electrode parts (112, 114) is formed in a zigzag shape As can be installed into each other. Such electrode-like portion can increase the contact surface of the electrode and the target substrate (1) to maximize the generation of the electrostatic force. Electrode portion shape according to the present invention can be modified in a variety of shapes to be illustrative. First and second electrode unit (112, 114) is supplied with a voltage for electrostatic force generated when driving the substrate support 100 to be connected to the electrostatic chuck power supply 120, an electrostatic method.

Claim 1 is, between the second electrode portion (112, 114) is provided with an insulating portion 113 for electrical isolation. Hybrid chuck according to the invention a separate unipolar (Unipolar, or mono polar (Monopolar)) manner and may generate an electrostatic force by having a single electrode with a body portion (102), preferably when holding a substrate the bipolar (bipolar) how the electric field is not required can generate an electrostatic force provided by the two or more electrodes. In the present invention, it will be described by starting the first and second electrode parts (112, 114) of the bipolar system.

Hybrid line 106 is formed by one or more passes through the body portion 102. At least one hybrid line 106 is connected to a vacuum pump 130, in the case of driving the substrate support 100 by a vacuum system by drawing air through a hybrid line 106, which is secured to the upper surface of body portion 102 and fixing the substrate to be processed (1).

Hybrid line 106 may be connected to the refrigerant supply source 150 to the cooling channel for cooling of the substrate (1). In other words, hybrid line 106 when the substrate support 100 which when driven by a vacuum system, the inhaled air to secure the substrate to be processed 1, and the substrate support 100 driven by an electrostatic method coolant the supply to cool the received target substrate (1).

More than one hybrid line 106 are connected to each other to form a refrigerant circulation path 107. Refrigerant circulation path 107 is formed in a concentric circle form on the dielectric layer 108, the upper surface of the body 102. Refrigerant circulation path 107, are distributed uniformly on the entire upper surface of the body 102. A hybrid line 106 in the refrigerant circulation path 107 is used as a coolant supply, and the other of the hybrid line 106 is used as a refrigerant discharge. Refrigerant supply source 150, a through hybrid line 106 and the coolant is supplied, rotate in the refrigerant circulation path 107, and the blood after controlling the temperature of the substrate (W) back to the other one of the hybrid lines (106 from ) it is discharged through. At this time, each hybrid line 106 is a flow control valve 154 for regulating the flow rate of the refrigerant is connected. To the substrate support 100 of the vacuum system the coolant is helium (He) gas can be supplied.

When driving the substrate support 100 by a vacuum method, the driving of the first and second electrode parts 112 and 114 are fixed to the substrate 1 by the electrical force. Vacuum system is independent and the atmosphere in the chamber, which is installed with a substrate support 100, the refrigerant circulation path 107 and the blood through a hybrid line (106) substrate (1) while the helium gas is circulated to the rear of the temperature of the substrate adjust the temperature to improve the uniformity.

Hybrid line 106 is via the switching valve 140 connected to the vacuum pump 130 or coolant supply source (150). Switching valve 140 connects the hybrid line 106 and the vacuum pump 130 receives the transmission signal for the drive of the vacuum system from the control unit 110. In addition, the switching valve 140 connects the hybrid line 106 and the coolant source 150. When transmitting a signal for driving the electrostatic scheme from the control unit (110). At this time, the controller 110 transmits a drive signal to the electrostatic chuck power supply (120).

Between the substrate (1) is a hybrid line 106 and the vacuum pump 130 to determine fixed to the substrate support 100 is provided with a pressure measuring sensor unit 132. Pressure sensor unit 132 confirms the substrate is securely fixed to measure the vacuum pressure variation in the hybrid line 106. In addition, between the substrate (1) it is a hybrid line 106 and the coolant source 150 to determine fixed to the substrate support 100 is provided with a flow sensor 152. Flow sensor 152 confirms the substrate is securely fixed to measure refrigerant flow rate variation in the hybrid line 106 and the refrigerant circulation path 107.

Conventional substrate support 100, but is mainly formed of a ceramic (Ceramic) material, the substrate support 100 according to the present invention is formed of a polyimide (Polyimide). Ceramic is an excellent advantage of high durability and high thermal conductivity and adsorption capacity. The disadvantage is the high cost, and there is a disadvantage as well as difficult manufacturing process due to the porosity (porous) absorbs moisture. On the other hand, the polyimide (Polyimide) is the change in the characteristic low to high at a low temperature and excellent heat resistance and the price jeonyeom. Also it has the advantage of having a high breakdown voltage, a short discharge time. Also do not have the impact property by water has a wide application range as compared with the ceramic.

16 is a flow diagram of the hybrid operating chuck method.

Referring to Figure 16, when the substrate 1 is introduced into the chamber for the process proceeds, the user or the control unit 110 selects whether to drive the substrate support 100 by any of an electrostatic method or a vacuum method (S300) . May select a manual manner by the user, by the control unit 110 according to the state of the atmosphere or the substrate support 100 within the chamber may be selected systematically.

If you choose to operate the electrostatic method, it is applied to the electrostatic chuck voltage to the first and second electrode portions 112 and 114 from the electrostatic chuck power supply (120) (S310). The refrigerant supplied from the refrigerant supply source 150 rotate in the hybrid line 106 and the refrigerant circulation path (107) (S311). Although not illustrated in the drawings it is to measure the pressure of the refrigerant cycle using a pressure measuring device (S312), measuring the flow rate of the coolant through the flow measurement sensor 152 transmitted to the controller (S313). The control unit 110 confirms the state of fixing the substrate 1 through the flow amount of change in the measured refrigerant. For example, the control section 110 as compared to blood treated substrate (1) measurement data for the flow rate changes in a fixed state to the state with abnormal fixing normally flow rate variation can be found a static state (S314). When the refrigerant flow rate variation is judged normal as did when the process proceeds to step on the substrate (1) (S316). However, the substrate 1 through the refrigerant flow rate variation is not fixed properly determined, the substrate (1) the can was again mounted on the substrate support 100 to repeat the above process. Or to decide that the smooth switch to the vacuum system driven by an electrostatic method may be fixed to the substrate (1) on a substrate support (100) (S315). Conversion of these operating modes may be made manually by the user, it may be made automatically by the determination of the control unit 110.

And when selected to operate in a vacuum system, and drives the vacuum pump 130 through a hybrid line 106 is sucking the air (S320). And through the pressure sensor 132 measures the vacuum pressure in the hybrid line 106 is sent to the control unit (S321). The control unit 110 confirms the state of fixing the substrate (1) with the measured vacuum pressure change amount. For example, the control section 110 as compared to blood treated substrate (1) measurement data for the change in pressure in the frozen state to the state with abnormal fixing normally pressure change can confirm the steady state (S322). If it is determined vacuum did pressure variation is if it is determined as normal and proceeds the process to the substrate (1) (S324). However, the substrate 1 through the vacuum pressure change amount is not fixed properly, the substrate (1) the can was again mounted on the substrate support 100 to repeat the above process. Or to be driven by a vacuum system to decide that smooth transition to the electrostatic method may be fixed to the substrate (1) (S323). Conversion of these operating modes may be made manually by the user, it may be made automatically by the determination of the control unit 110.

Therefore, by using the hybrid chuck of the present invention may select a substrate holding system according to the process atmosphere and environment. Also it has the effect that, if not using a method it is possible to secure the substrate by selecting a different approach is required to replace the stop the substrate processing process, the event of a fault or chuck increase productivity and repair costs and production costs are reduced.

The embodiment of a plasma apparatus for the gas phase etching and cleaning of the present invention is merely illustrative, those skilled in the art that the present invention various modifications and are possible equivalent other embodiments therefrom described above It will be able to appreciate that point.

So the present invention as it will be well understood by but not limited only in the form referred to in the detailed description. Therefore, the true technical protection scope of the invention as defined by the technical spirit of the appended claims. In addition, the present invention is intended to include all modifications and equivalents, and alternatives falling within the spirit and the scope of the invention as defined by the appended claims.

Claims (20)

  1. The reactor body for processing a substrate to be processed;
    The process gas is directly plasma generation region in the reactor body and introduced to the plasma is derived directly dissociating the process gas;
    Plasma-induced assembly of a plasma induced by the direct plasma generating region;
    A mixing zone in the reactor to form the reactive species that the vaporized gas flows from the outside of said direct the process gas and the reactor body flows from the plasma generation region is a mixed body;
    The direct and provided between the plasma generation region and the mixing zone the first gas distribution baffle having a plurality of first through-holes;
    A substrate processing region within the reactor body which is the substrate processed by the reactive species flows from the mixing zone; And
    Is provided between the mixing region and the substrate processing region, in it said mixing zone, characterized in that it comprises a second gas distribution baffle having a plurality of second through holes perforated so that it can be introduced the reaction paper to the substrate processing region a plasma device for a vapor phase etching and cleaning.
  2. According to claim 1,
    The plasma apparatus
    Fixing bars installed in the gas inlet at which the process gas is introduced; And
    Is installed to the bar the fixing, the process gas is provided to face the gas inlet the incoming process gas to gas phase, it characterized in that it comprises a diffuser plate having the direct plasma generating region distribution plate of the plate-like to diffuse in the etching and a plasma device for cleaning.
  3. 3. The method of claim 2,
    The distribution plate plasma apparatus for the gas phase etching and cleaning, characterized in that it comprises a plurality of through-holes.
  4. According to claim 1,
    The second gas distribution baffle plasma apparatus for plasma vapor etch and cleaning, characterized in that it comprises a plurality of vaporized gas injection hole for injecting vaporized gas into the mixing region.
  5. According to claim 1,
    A plasma device for a vapor phase etching and cleaning, characterized in that it comprises a first and second gas distribution baffle either or both the heating coil.
  6. According to claim 1,
    The plasma induction plasma assembly apparatus for gas phase etching and cleaning comprising the cooling channel.
  7. According to claim 1,
    The vaporized gas is a plasma etching apparatus for a gas phase and washing, characterized in that the vaporized H 2 O.
  8. The method according to any one of claim 1 or 2, wherein
    The plasma apparatus
    A body portion having a dielectric layer on a top surface which is mounted the substrate to be processed;
    At least one electrode unit is provided in the body portion is driven receives application of a voltage; and
    So as to be in contact with the substrate to be processed is mounted and includes a substrate support comprising at least one hybrid lines formed on said body portion,
    A plasma device for a vapor phase etching and cleaning of the target substrate to fix the substrate to be processed by the driving parts of the electrode to the body portion, or drawing air through the hybrid line is characterized in that secured to the body portion.
  9. The method of claim 8,
    The substrate support includes a plasma device for a gas phase etching and cleaning, characterized in that formed from a polyimide.
  10. The method of claim 8,
    Comprising: a refrigerant circulation path formed by the plurality of the hybrid lines coupled to the dielectric layer,
    When the substrate to be processed and fixed to the driving parts of the electrode lines and the hybrid plasma equipment for vapor phase etching and cleaning, comprising a step of circulating the coolant for cooling the substrate to be processed through the refrigerant circulation path.
  11. The reactor body for processing a substrate to be processed;
    The process gas is directly plasma generation region in the reactor body and introduced to the plasma is derived directly dissociating the process gas;
    Plasma-induced assembly of a plasma induced by the direct plasma generating region;
    A substrate processing region within the reactor body in which the vaporized gas flows from the outside of the reactor body and direct the process gas flows from the plasma generating region is mixed to form a reactive species, wherein the target substrate processed by reactive species; And
    A plasma device for a vapor phase etching and cleaning that comprises the direct plasma generating region and a gas distribution baffle having a plurality of through-holes through the substrate to the processing zone is provided between a uniform plasma distribution characterized.
  12. 12. The method of claim 11,
    The plasma apparatus
    Fixing bars installed in the gas inlet at which the process gas is introduced; And
    Is installed to the bar the fixing, the process gas is provided to face the gas inlet the incoming process gas to gas phase, it characterized in that it comprises a diffuser plate having the direct plasma generating region distribution plate of the plate-like to diffuse in the etching and a plasma device for cleaning.
  13. 13. The method of claim 12,
    The distribution plate plasma apparatus for the gas phase etching and cleaning, characterized in that it comprises a plurality of through-holes.
  14. 12. The method of claim 11,
    The gas distribution baffle plasma apparatus for the gas phase etching and cleaning, characterized in that it comprises a plurality of vaporized gas injection hole for injecting the vaporized gas flows from the outside into the substrate processing region.
  15. 12. The method of claim 11,
    The gas distribution baffle plasma apparatus for the gas phase etching and cleaning, characterized in that it comprises a heating wire.
  16. 12. The method of claim 11,
    The plasma induction plasma assembly apparatus for gas phase etching and cleaning comprising the cooling channel.
  17. 12. The method of claim 11,
    The vaporized gas is a plasma etching apparatus for a gas phase and washing, characterized in that the vaporized H 2 O.
  18. A method according to any one of items 11 or 12,
    The plasma apparatus
    A body portion having a dielectric layer on a top surface which is mounted the substrate to be processed;
    At least one electrode unit is provided in the body portion is driven receives application of a voltage; and
    So as to be in contact with the substrate to be processed is mounted and includes a substrate support comprising at least one hybrid lines formed on said body portion,
    A plasma device for a vapor phase etching and cleaning of the target substrate to fix the substrate to be processed by the driving parts of the electrode to the body portion, or drawing air through the hybrid line is characterized in that secured to the body portion.
  19. 19. The method of claim 18,
    The substrate support includes a plasma device for a gas phase etching and cleaning, characterized in that formed from a polyimide.
  20. 19. The method of claim 18,
    Comprising: a refrigerant circulation path formed by the plurality of the hybrid lines coupled to the dielectric layer,
    When the substrate to be processed and fixed to the driving parts of the electrode lines and the hybrid plasma equipment for vapor phase etching and cleaning, comprising a step of circulating the coolant for cooling the substrate to be processed through the refrigerant circulation path.
PCT/KR2014/007911 2013-08-28 2014-08-26 Plasma apparatus for vapor phase etching and cleaning WO2015030457A1 (en)

Priority Applications (4)

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KR1020130102625A KR101574740B1 (en) 2013-08-28 2013-08-28 Plasma apparatus for vapor phase etching and cleaning
KR10-2013-0102625 2013-08-28
KR10-2014-0109504 2014-08-22
KR1020140109504A KR101590566B1 (en) 2014-08-22 2014-08-22 Plasma apparatus for vapor phase etching and cleaning

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030019994A (en) * 2001-08-28 2003-03-08 삼성전자주식회사 Apparatus for supplying gas which is used in a semiconductor device fabricating process and apparatus using the same
JP4094262B2 (en) * 2001-09-13 2008-06-04 住友大阪セメント株式会社 Chucking device and manufacturing method thereof
JP2010021140A (en) * 2008-07-11 2010-01-28 Psk Inc Large-area substrate processor using hollow cathode plasma
US20120211462A1 (en) * 2011-02-22 2012-08-23 Applied Materials, Inc. Remotely-excited fluorine and water vapor etch

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030019994A (en) * 2001-08-28 2003-03-08 삼성전자주식회사 Apparatus for supplying gas which is used in a semiconductor device fabricating process and apparatus using the same
JP4094262B2 (en) * 2001-09-13 2008-06-04 住友大阪セメント株式会社 Chucking device and manufacturing method thereof
JP2010021140A (en) * 2008-07-11 2010-01-28 Psk Inc Large-area substrate processor using hollow cathode plasma
US20120211462A1 (en) * 2011-02-22 2012-08-23 Applied Materials, Inc. Remotely-excited fluorine and water vapor etch

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