TW201635425A - 用於半導體處理之具平面加熱區的加熱板及其製造方法 - Google Patents

用於半導體處理之具平面加熱區的加熱板及其製造方法 Download PDF

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TW201635425A
TW201635425A TW105119672A TW105119672A TW201635425A TW 201635425 A TW201635425 A TW 201635425A TW 105119672 A TW105119672 A TW 105119672A TW 105119672 A TW105119672 A TW 105119672A TW 201635425 A TW201635425 A TW 201635425A
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substrate support
power
power supply
substrate
heating
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TW105119672A
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TWI642135B (zh
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席恩哈密特
高夫凱伊斯
班傑明尼爾
卡門登特凱伊斯
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蘭姆研究公司
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Abstract

用於半導體電漿處理設備中的基板支撐組件之加熱板包含佈置在可縮放的多工布局中的數個獨立控制平面加熱區，以及用以獨立控制並供電給平面加熱區的電子元件。併有加熱板的基板支撐組件包括靜電夾箝電極與溫度受控底板。製造加熱板的方法包括將具有平面加熱區、供電線路、電力回流線路與穿孔的陶瓷或高分子薄片接合在一起。

Description

用於半導體處理之具平面加熱區的加熱板及其製造方法
本發明係關於用於半導體處理之具平面加熱區的加熱板。
隨著各個接續不斷的半導體技術世代，基板直徑趨向增加而電晶體尺寸趨向縮小，以致對於基板處理的精確度與可重複性有更高要求。半導體基板材料（如矽基板）是由包括使用真空腔等等技術來處理。此等技術包括非電漿應用方法，例如電子束沉積，以及電漿應用方法，例如濺鍍沉積、電漿輔助化學氣相沉積（PECVD, plasma-enhanced chemical vapor deposition）、抗蝕層剝除、以及電漿蝕刻。
今日市售的電漿處理系統是那些面臨對於增進的精確度與可重複性有高漲要求的半導體生產機具。電漿處理系統的一個評斷標準為均勻度提升，包括半導體基板表面上的製程結果均勻度，以及以相同名義的輸入參數所處理之一連串基板的製程結果均勻度。基板上均勻度的持續改進係備受期待。這需要電漿腔室具備增進的均勻度、一致性與自我診斷能力等等。
依照一實施例，在半導體電漿處理設備中用以支撐半導體基板的基板支撐組件之加熱板至少包含第一電氣絕緣層；平面加熱區，其至少包含橫向分布在該第一電氣絕緣層各處的第一、第二、第三、與第四平面加熱區；導電供電線路，其至少包含電連接至該第一與第二平面加熱區的第一供電線路，與電連接至該第三與第四平面加熱區的第二供電線路；導電電力回流線路，其至少包含電連接至該第一與第三平面加熱區的第一電力回流線路，與電連接至該第二與第四平面加熱區的第二電力回流線路。
在半導體處理設備中，以放射狀與方位角形式控制基板溫度以達成基板上期望的臨界尺寸（CD, critical dimension）均勻度之要求越變越嚴苛。即使微小的溫度變化也會影響CD至無法接受的程度，而在CD逼近100nm以下的半導體製程時更是如此。
在處理期間，基板支撐組件可用於各式功能，例如支撐基板、調整基板溫度、以及供應射頻電力。基板支撐組件可包含在處理期間用以透過靜電將基板夾在基板支撐組件上之靜電夾頭（ESC, electrostatic chuck）。ESC可為可調式ESC（T-ESC）。在共同受讓的美國專利申請案第6,847,014號與第6,921,724號中有描述一T-ESC，該內容併入此案以供參考。基板支撐組件可包含陶瓷基板支座、液冷散熱裝置（此後稱為冷卻板）、以及多個同心加熱區來達成逐步及放射狀的溫度控制。冷卻板一般會維持在0 °C與30 °C之間。加熱器位在冷卻板上，而二者之間具有一層絕熱器。加熱器能維持基板支撐組件的支撐表面的溫度高於冷卻板溫度約0 °C至80 °C。藉由改變多個加熱區中的加熱器功率，基板支撐溫度分布就能在中央熱、中央冷、與均勻之間改變。另外，可在高於冷卻板溫度0 °C至80 °C的操作範圍中，逐步改變平均的基板支撐溫度。隨著CD因半導體技術的發展而縮小，微小的方向角溫度變化因而亦帶來日漸困難的挑戰。
有幾個原因造成溫度控制不易。首先，許多因素皆可影響熱量傳遞，例如熱源與散熱裝置的位置、移動、媒介的材料與形狀。第二，熱量傳遞為動態過程。除非所探討的系統處於熱平衡，否則熱量傳遞將會發生，且溫度分布與熱量傳遞將隨時間改變。第三，不平衡現象（例如當然總會在電漿處理中存在的電漿）會使得以理論預估任何實際的電漿處理設備之熱傳現象非常困難（若非無法辦到）。
電漿處理設備中的基板溫度分布受到許多因素影響，例如電漿密度分布、RF功率分布、以及夾頭中各種加熱或冷卻元件的詳細結構，因而基板溫度分布通常並不均勻，且難以用少量的加熱或冷卻元件來控制。此缺陷轉化成整個基板上的處理速率不均勻，以及基板上元件晶粒的臨界尺寸不均勻。
鑒於溫度控制的複雜本質，在基板支撐組件中併入數個獨立控制的加熱區將會頗有助益，其能使設備主動產生並維持期望的空間與時間溫度分布，並能彌補其他會對CD均勻度造成不良影響的因素。
此處所論為具備數個獨立控制加熱區之加熱板，其用於半導體處理設備中的基板支撐組件上。此加熱板包含加熱區以及供電與電力回流線路之可縮放的多工布局設計。藉由調整加熱區的功率，就能以放射狀與方位角兩種形式來塑造處理期間的溫度分布。雖然此加熱板主要是針對電漿處理設備而描述，但此加熱板亦可用於其他不使用電漿的半導體處理設備。
亦描述用以製造此加熱板、包含此類加熱板的基板支撐組件之方法，以及用以供電並控制包含此類加熱板的基板支撐組件之方法。
最好能把加熱板中的加熱區佈置成明確的圖形，例如矩形網格、六角形網格、環形陣列、同心圓或任何期望的圖形。各加熱區可為任何適合的尺寸並可具備一個以上的加熱元件。加熱區中的所有加熱元件係一起開啟或關閉。為了讓電連接點數量最少，供電與電力回流線路係佈置如下：各供電線路連接至不同的加熱區群組，且各電力回流線路連接至不同的加熱區群組，其中各加熱區係屬於連接至一特定供電線路的群組之一以及連接至一特定電力回流線路的群組之一。任二個加熱區皆不會連接至相同的供電與電力回流線路對。因此，就能藉由指引電流通過一特定加熱區所連接的供電與電力回流線路對來啟動該加熱區。加熱元件的功率最好小於20 W（5至10 W更佳）。加熱元件可為電阻式加熱器，例如聚醯亞胺加熱器、矽膠加熱器、雲母加熱器、金屬加熱器（如W、Ni/Cr合金、Mo或Ta）、陶瓷加熱器（如WC）、半導體加熱器或碳加熱器。加熱元件可為網板印刷式、繞線式或蝕刻式金屬薄片加熱器。在一實施例中，各加熱區相應基板上的元件晶粒，係為不大於四個製造在半導體基板上的元件晶粒，或是不大於二個製造在半導體基板上的元件晶粒、或是不大於一個製造在半導體基板上的元件晶粒、或是介於2和3 cm2 之間的面積。加熱元件的厚度範圍可從2微米至1毫米，以5-80微米最佳。為了在多個加熱區以及/或是供電與電力回流線路之間留有空間，加熱區的總面積最高可為基板支撐組件的上表面面積的90%，如50%-90%的面積。可把供電線路或電力回流線路（總稱為電線）配置在範圍從1至10 mm之加熱區間的間隙中，或在以電氣絕緣層和加熱區平面隔開的獨立平面上。為了承載大量電流並減少焦耳熱，只要空間上允許，最好使供電與電力回流線路儘可能地寬。在電線和加熱區處於相同平面的一實施例中，電線的寬度最好介於0.3 mm與2 mm之間。在電線和加熱區處於不同平面的另一實施例中，電線的寬度可和加熱區一樣大，例如針對一個300 mm的夾頭，此寬度可為1至2英吋。供電與電力回流線路的材料可和加熱元件的材料相同或不同。供電與電力回流線路的材料最好為低電阻係數材料，如Cu, Al, W, Inconel®或Mo。
圖1-2呈現包含加熱板實施例之基板支撐組件，該加熱板具有併在二個電氣絕緣層104A與104B中的加熱區101陣列。電氣絕緣層可為高分子材料、無機材料、陶瓷（如氧化矽、氧化鋁、氧化釔、氮化鋁）或其他適合的材料。基板支撐組件更包含（a）具有陶瓷層103（靜電夾箝層）的ESC，在陶瓷層103中嵌入電極102（如單極或雙極），以採DC電壓透過靜電將基板夾在陶瓷層103的表面上；（b）熱阻層107；（c）內含通道106（供冷卻劑流動）的冷卻板105。
如圖2所示，各個加熱區101和供電線路201之一者連接，並和電力回流線路202之一者連接。任何二個加熱區101皆不會共用相同的供電201與電力回流202線路對。藉由適合的電氣切換設備，就能連接供電201與電力回流202線路對至電源（未呈現），僅有連接至此線路對的加熱區會藉以開啟。各加熱區的均時加熱功率可藉由時域多工（time-domain multiplexing）來個別調整。為了預防在不同的加熱區之間發生串音（crosstalk），可串聯一整流器250（如二極體）於各加熱區與和連接至其的供電線路之間（如圖2所示）、或是於各加熱區和連接至其的電力回流線路之間（未呈現）。整流器可實際位在加熱板中或任何適合的位置。或者，可使用任何電流阻隔設備（如固態切換器）來預防串音發生。
圖3A、3B與3C呈現包含ESC、冷卻板、以及加熱板一實施例之基板支撐組件，其中加熱區101與供電線路201係佈置在第一平面302中，而電力回流線路202係佈置在藉由電氣絕緣層304和第一平面302隔開的第二平面303中。電力回流線路202透過延伸於第一平面302與第二平面303之間的電氣絕緣層304中的導電孔301和加熱區101連接。
使用上，供電線路201與電力回流線路202係經由冷卻板中的孔洞或導管連接至加熱板外的電路系統。應知冷卻板中存在的孔洞或導管會負面影響基板支撐組件的溫度均勻度，因而減少冷卻板中的孔洞或導管數量能提高溫度均勻度。除此之外，少量的孔洞才能使其沿著基板支撐組件的邊緣放置。舉例而言，冷卻板中的單一供電導管可用以供應電氣導線給供電線路201。在一實施例中（圖4A與圖4B），加熱區101與供電線路201係佈置在第一平面402中。供電線路201透過延伸於第一平面402與第二平面403之間的導電孔301連接到第二平面403中的導線404。第二平面403以電氣絕緣層（未呈現）和第一平面402隔開。電力回流線路202係佈置在第二平面403中，並透過延伸於第一平面402與第二平面403之間的導電孔301連接到加熱區101。在第二平面403中，在維持導線404之間絕緣的情況下將導線404從冷卻板中的孔洞或導管401牽過。相似地，電力回流線路202連接至導線405，且是在維持導線405之間絕緣的情況下將導線405從冷卻板中的孔洞或導管406牽過。
圖5A、5B、5C與5D呈現包含另一加熱板實施例之基板支撐組件，其中加熱區101係佈置在第一平面501中；供電線路201係佈置在第二平面502中；以及電力回流線路202係佈置在第三平面503中。第一平面501、第二平面502、與第三平面503是藉由電氣絕緣層504與304而彼此隔開。供電線路201與電力回流線路202透過延伸於平面501、502與503之間的電氣絕緣層304與504中的導電孔301而連接到加熱區101。連接到供電線路201的導線（未呈現）繞經層504中的孔洞或導管505。當知在穿孔與導管配置合宜的前提下，可以垂直方向的任何順序來佈置平面501、502與503。加熱器最好配置成離基板支撐組件的上表面最近。圖5E呈現一實施例，其中各加熱區101透過整流器506（如二極體）連接到電力回流線路202。整流器506僅允許電流從供電線路201穿過加熱區101流至電力回流線路202，因而預防在加熱區之間發生串音。
基板支撐組件能包含一額外的電氣絕緣層604，其中併有一個以上的額外加熱器（此後稱為主要加熱器601）（請看圖6）。主要加熱器601最好為個別控制的高功率加熱器。主要加熱器的功率介於100與10000 W之間，最好是介於1000與5000 W之間。主要加熱器可配置成矩形網格、同心環形區、放射狀區或環形區與放射狀區之組合。主要加熱器可用以在基板上改變平均溫度、調整放射狀溫度分布、或逐步的溫度控制。主要加熱器可位在加熱板的加熱區之上或之下。
在一實施例中，加熱板的絕緣層中至少一者為高分子材料薄片。
在另一實施例中，加熱板的絕緣層中之至少一者為無機材料（如陶瓷或氧化矽）薄片。用以製造陶瓷夾頭的適合絕緣與導電材料實例係揭露在共同受讓的美國專利案第6483690號，該案內容併入本申請案以供參考。
基板支撐組件可包含加熱板實施例，其中加熱板的各加熱區尺寸相似或小於基板上的單一元件晶粒或元件晶粒群組，以致基板溫度以及由此而來的電漿蝕刻製程能針對各元件晶粒位置來控制，以從該基板得到最大的元件良率。加熱板的可縮放結構能以最少量的供電線路、電力回流線路、與冷卻板中的供給孔，輕易容納逐個晶粒的基板溫度控制（通常在300 mm直徑的基板上會有超過100個的晶粒）所需的加熱區數量，因而減少基板溫度的擾動、製造成本與基板支持組件的複雜度。雖然並未呈現，基板支撐組件可包含如下所列的特徵：抬升基板用的抬升栓、氦氣背冷裝置、提供溫度回授信號的溫度感測器、提供加熱功率回授信號的電壓與電流感測器、加熱器以及/或是夾箝電極的供電裝置、以及/或是RF濾波器。
在製造加熱板的一方法實施例中（其中絕緣層為陶瓷），可使用如電漿噴塗（plasma spraying）、化學氣相沉積或濺鍍等方法來將陶瓷材料沉積在適合的基板上以形成絕緣層。此層可為初始層或加熱板的絕緣層之一層。
在製造加熱板的一方法實施例中（其中絕緣層為陶瓷），可將陶瓷粉末、黏結劑、與液體混合物加壓成為薄片並乾燥此薄片（此後稱為生胚薄片（green sheet））以形成絕緣層。生胚薄片可為約0.3 mm厚。可在生胚薄片中打出孔洞以在生胚薄片中形成穿孔。這些孔洞填滿了導電粉末漿料。加熱元件、供電與電力回流線路可由下列方法形成：網板印刷導電粉末漿料（如W、WC、摻SiC或MoSi2 ）、加壓預切金屬薄片、噴塗導電粉末漿料、或其他適合的方法。可在生胚薄片的形成製程期間加壓出容納任何整流器（如二極體）的凹槽，或在形成製程之後於生胚薄片中切出這些凹槽。可在這些凹槽中安裝個別元件的整流器。接著會對齊、加壓並燒結具備各式元件（電線、穿孔、整流器與加熱元件）的數個生胚薄片以形成整個加熱板。
在製造加熱板的另一方法實施例中（其中絕緣層為陶瓷），可藉由將陶瓷粉末、黏結劑與液體的混合物加壓成生胚薄片並乾燥此生胚薄片以形成絕緣層。生胚薄片可為約0.3 mm厚。在生胚薄片中打出孔洞以容納穿孔。可在生胚薄片的形成製程期間加壓出容納任何整流器（如二極體）的凹槽，或在形成製程之後於生胚薄片中切出這些凹槽。接著就會燒結個別的生胚薄片。在燒結薄片中用以容納穿孔的孔洞會填滿導電粉末漿料。可網板印刷導電粉末漿料（如W、WC、摻SiC或MoSi2 ）或使用任何其他適合的方法在燒結薄片上形成加熱元件、供電與電力回流線路。可在燒結薄片的凹槽中安裝個別元件的整流器。接著會對齊並透過黏著劑接合具備各式元件（線路、穿孔、整流器與加熱元件）的數個燒結薄片以形成整個加熱板。
在絕緣層為氧化矽薄片的一實施例中，可使用如蒸鍍、濺鍍、PVD、CVD、PECVD的方法將氧化矽薄膜沉積在適合的基板上以形成絕緣層。
在製造加熱板的一較佳方法實施例中，如Al、Inconel®或Cu薄片的金屬薄片（元件層）係接合（如熱壓合、用黏著劑黏合）至如聚醯亞胺的第一高分子薄膜上。在元件層的表面上塗覆圖形化的抗蝕膜，其中該圖形定義電子元件（如加熱元件、供電與電力回流線路）的形狀與位置。暴露的金屬受到化學蝕刻而抗蝕圖形則留存在剩餘的金屬薄片中。接著藉由在適合的溶劑中溶解或乾式剝離來移除抗蝕層。用以容納穿孔而具孔洞的第二高分子薄膜（穿孔層）和第一高分子薄膜對齊並接合。可藉由在其中電鍍金屬來塗覆孔洞的側壁。可把任何適合數量的元件層與穿孔層接續合併。最後，為了電氣絕緣而用連續高分子薄膜來覆蓋暴露的金屬元件。
在另一實施例中，加熱元件、供電與電力回流線路是由沉積（如電漿噴塗、電鍍、化學氣相沉積、或濺鍍）在絕緣層或基板上（如生胚薄片）的金屬薄膜構成。
在另一實施例中，加熱元件、供電與電力回流線路是由沉積（如電鍍、化學氣相沉積、或濺鍍）在絕緣層或基板上（如生胚薄片）的一層非晶導電無機薄膜（如氧化銦錫）構成。
在又另一實施例中，加熱元件、供電與電力回流線路是由沉積（如化學氣相沉積、或濺鍍）在絕緣層或基板上（如生胚薄片）的一層導電陶瓷薄膜構成。
在一實施例中，加熱板中的供電與電力回流線路可由端點連接器連接至外部電路系統，如嵌入至冷卻板中但與之電氣絕緣的頂端彈簧式連接器（spring tipped passthroughs）。
在另一實施例中，加熱板中的供電與電力回流線路可藉由下列方式連接至外部電路系統：把導線附著（焊接、用導電黏著劑接合或點焊）在供電與電力回流線路上，並將這些導線穿過冷卻板中的孔洞或導管。
在一電漿處理系統中，用在電漿處理系統腔室中的RF功率通常高於100 W，有時會高於1000 W。RF電壓的幅度可超過千伏。在無適當的過濾或絕緣下，如此龐大的RF功率可輕易影響加熱區的控制與供電電路之運作。可使用RF濾波器來讓RF功率從控制與供電電路中分流。RF濾波器可為簡單寬頻濾波器或針對電漿處理系統所使用的特定RF頻率之調式濾波器。相對地，RF隔離器消除任一RF耦合元件和控制與供電電路之間的直接電連接。RF隔離器可為光耦合器或變壓器。
作為電漿處理系統如何運作的綜觀，圖7A呈現包含腔室713的電漿處理腔室之示意圖，其中配置上部噴頭電極（showerhead electrode）703與基板支撐組件704。基板712穿過載入埠711載入至基板支撐組件704上。氣體線路709供應製程氣體給傳送製程氣體進入腔室的上部噴頭電極703。氣體源708（如供應適合的氣體混合物之質量流量控制器）連接至氣體線路709。RF電源702連接至上部噴頭電極703。操作上，藉由真空泵710排空腔室，並且RF電力在上部噴頭電極703與基板支撐組件704中的下部電極之間電容耦合，以在基板712與上部噴頭電極703之間的空間中將製程氣體激發為電漿。可用電漿來蝕刻元件晶粒特徵至基板712的層中。基板支撐組件704可具併於其中的加熱器。應知雖然電漿處理腔室的細部設計可能不同，但仍可經由基板支撐組件704耦合RF電力。
圖7B呈現RF過濾或隔離的一實施例示意圖，其中在加熱區的供電與電力回流線路上並未連接濾波器或隔離器，而控制與供電電路705連接至和接地端701連接的濾波器或隔離器706B。由於主要加熱器的高功率，所以若在基板支撐組件中存在主要加熱器（未呈現），其最好能具備獨立的濾波器或隔離器。在此方法中，控制與供電電路705在RF電位上或「高側」上浮動。此方法允許數個加熱區共享單一濾波器或隔離器。
所有高側電路系統皆可容納在緊接於基板支撐組件基底結構之下的局部浮動法拉第籠的內側。
或者，可用隔離變壓器作為單一濾波器或隔離器706B，以使供電與控制電路705和RF隔離。因為變壓器強烈地消弱DC與低頻傳輸，所以加熱區的控制與供電電路705應當要能在相當高的頻率下（25至250 KHz）下運作。控制與供電電路係參照至單一浮動電位（浮動接地）。這需要連接至此隔離變壓器的控制與供電電路必須處在非常相似的RF暴露下。若二群控制與供電電路之間的RF電位相差非常多，顯著的RF電流就會在這些群組間流動。在此情境中，各群組就必須具有各自的濾波器或隔離器，亦或在這些群組之間必須要有濾波器或隔離器。
濾波器或隔離器706B可實際位在電漿處理腔室中或其他任何適合的位置上。
圖8中繪有加熱器控制電子元件的一實施例。低側控制器809可為微控制器單元（MCU, microcontroller unit）或為較高階設備如電腦（PC）。透過光耦合器807，低側控制器和高側MCU 805數位通訊，而後者和加熱區801、感測器803、以及任何輔助電路802互動。若高側MCU 805具有足夠容量與局部記憶體，就可在各運作前預先載入任一設定點與程式至高側MCU 805中，因而就不需和低側控制器809有即時連結。804代表模組之間的單向通訊連結。806代表模組之間的雙向通訊連結。
在時域多工系統的一實施例中，高側MCU依序供電給各個加熱區供電線路。同一時間僅有一個供電線路連接至電源。在供電給一個供電線路的期間，高側MCU可在這期間的一部分時間中維持任何或所有電力回流線路連接至浮動參考端。在以下狀況時會開啟加熱區：連接至該加熱區的供電線路中至少有一個和電源連接，且連接至該加熱區的電力回流線路中至少有一個連接至浮動參考端。加熱區的平均功率和開啟加熱器的平均期間直接成比例。或是，在供電給一個供電線路的期間，高側MCU可在這整個期間中維持任何或所有電力回流線路連接至浮動參考端，並調節會傳送至各個開啟的加熱區之功率。
以具10乘10網格的加熱區為例，在第N列的加熱區連接至第N號供電線路；在第M行的加熱區連接至第M號電力回流線路。高側MCU可採用各供電線路依序和電源連接100 ms的方式來控制加熱。舉例而言，在第3號供電線路連接至電源的100 ms期間，可在這100 ms期間如特定加熱需求所指示般，操作MCU以分別連接第7、8、與9號電力回流線路至浮動參考端達10、50、與100 ms。因此，在第3列與第7行的加熱區就具有1%的工作週期；在第3列與第8行的加熱區就具有5%的工作週期；在第3列與第9行的加熱區就具有10%的工作週期。在此特定實例中，會設定各加熱區的最大尖峰功率為期望平均最大功率的十倍。
為了預防可察覺的溫度調變，切換頻率與整個多工系統最好要快到使各加熱區頻繁（至少1 Hz）獲得指派。藉由使用來自一個以上的溫度感測器之回授資料來實行額外的迴圈控制。若想要亦可使用電壓與電流感測器。可裝置這些感測器以測量參數，例如基板上不同位置的溫度與加熱區的功率。為了使測量參數與其設定目標值之間的差異最小，這些測量參數會送至控制與供電電路以和這些參數的設定目標值作比較，以致控制與供電電路可依此調整傳送至加熱區的功率。
雖然已參照特定實施例詳細描述加熱板、製造此加熱板的方法、包含此加熱板的基板支撐組件、以及使用含有此基板支撐組件的電漿處理腔室的方法，但是熟習本技術者當可明白在未偏離隨附申請專利範圍的範疇下，仍可進行各式變更與修改，並可使用均等者。舉例而言，基板支撐組件可包括用以監控基板溫度的溫度感測器、以期望箝位電壓供電給ESC的供電設備、用以升起與降下基板的升降栓設備、用以供應如氦氣的氣體至基板底側的熱量傳遞氣體供應設備、供應熱量傳遞液體至冷卻板的溫度受控液體供應設備、用以分別供電給在平面加熱區之上或之下的主要加熱器之供電設備、以一個以上的頻率供應RF電力給併於基板支撐組件中的下部電極之供電設備等等。
101‧‧‧加熱區
102‧‧‧電極
103‧‧‧陶瓷層
104A‧‧‧電氣絕緣層
104B‧‧‧電氣絕緣層
105‧‧‧冷卻板
106‧‧‧通道
107‧‧‧熱阻層
201‧‧‧供電線路
202‧‧‧電力回流線路
250‧‧‧整流器
301‧‧‧導電孔
302‧‧‧第一平面
303‧‧‧第二平面
304‧‧‧電氣絕緣層
401‧‧‧孔洞或導管
402‧‧‧第一平面
403‧‧‧第二平面
404‧‧‧導線
405‧‧‧導線
406‧‧‧孔洞或導管
501‧‧‧第一平面
502‧‧‧第二平面
503‧‧‧第三平面
504‧‧‧電氣絕緣層
505‧‧‧孔洞或導管
601‧‧‧主要加熱器
604‧‧‧電氣絕緣層
701‧‧‧接地端
702‧‧‧RF電源
703‧‧‧上部噴頭電極
704‧‧‧基板支撐組件
705‧‧‧控制與供電電路
706B‧‧‧濾波器或隔離器
708‧‧‧氣體源
709‧‧‧氣體線路
710‧‧‧真空泵
711‧‧‧載入埠
712‧‧‧基板
713‧‧‧腔室
801‧‧‧加熱區
802‧‧‧輔助電路
803‧‧‧感測器
804‧‧‧單向通訊連結
805‧‧‧高側微控制器單元（MCU）
806‧‧‧雙向通訊連結
807‧‧‧光耦合器
809‧‧‧低側控制器
圖1為基板支撐組件的橫剖面示意圖，其中併有具加熱區陣列的加熱板，且該基板支撐組件亦包含靜電夾頭（ESC）。
圖2描繪一加熱板實施例中加熱區陣列和供電與電力回流線路之間的拓撲關係，該加熱板可併於基板支撐組件中。
圖3A呈現供電線路與加熱區在相同平面的一實施例。
圖3B呈現電力回流線路位在以電氣絕緣層和圖3A中的平面隔開之平面上，且電力回流線路透過延伸穿過電氣絕緣層的穿孔和加熱區連接。
圖3C呈現基板支撐組件的橫剖面示意圖，該基板支撐組件併有圖3A與3B的加熱板。
圖4A呈現供電線路與加熱區在相同平面的一實施例。
圖4B呈現以電氣絕緣層和圖4A中的平面隔開之一平面，其中該供電線路透過穿孔和此平面中的導線連接，並被牽線至冷卻板（未呈現）中的單一孔洞。在此平面中的電力回流線路透過延伸於此平面與圖4A平面之間的穿孔和加熱區連接。電力回流線路亦被牽線至冷卻板（未呈現）中的單一孔洞。
圖5A呈現加熱區位在無供電線路與電力回流線路的平面上之一實施例。該加熱區透過穿孔連接至在一個以上不同平面的供電線路與電力回流線路。
圖5B呈現供電線路在以電氣絕緣層和圖5A中的平面隔開之第二平面上。供電線路透過延伸於圖5A與5B中的二個平面之間的穿孔和加熱區連接。
圖5C呈現電力回流線路在以另一電氣絕緣層和圖5A與5B中的平面隔開之第三平面上。電力回流線路透過延伸於圖5A-C中的所有三個平面之間的穿孔和加熱區連接。連接至圖5B中供電線路的導線亦在此平面中繞經供應孔。
圖5D為基板支撐組件的橫剖面示意圖，該基板支撐組件併有圖5A-C的加熱板。
圖5E為基板支撐組件的橫剖面示意圖，該基板支撐組件併有圖5A-C的另一加熱板。
圖6為併入加熱板的基板支撐組件之橫剖面示意圖，該基板支撐組件更包括加熱區陣列之上的主要加熱器層，該主要加熱器位在以電氣絕緣層和加熱板中所有平面隔開的額外平面上。
圖7A為示範性電漿處理腔室的示意圖，其可包括具備本文所述的加熱板之基板支撐組件。
圖7B為RF隔離方法的示意圖。
圖8呈現在基板支撐組件的控制電子元件實施例中之信號流的方塊圖。
101‧‧‧加熱區
201‧‧‧供電線路
202‧‧‧電力回流線路
250‧‧‧整流器
301‧‧‧導電孔

Claims (18)

  1. 一種基板支撐件，對於在基板處理腔室中的基板提供支撐，該基板支撐件包含： 可獨立控制的熱元件，配置成調整該基板支撐件之上表面的溫度分布，該等熱元件係由二條以上電線供電，其中每一電線係電連接至該等熱元件的不同群組，其中沒有兩個熱元件係電連接至同一對電線。
  2. 如申請專利範圍第1項之基板支撐件，更包含溫度感測器，配置成測量在該基板支撐件上之複數位置的溫度；及控制與供電電路，其係電連接至該等熱元件，且配置成從該等溫度感測器接收測量到的參數，並調整傳送至該等熱元件的功率，以將該等測量到的參數與設定目標值之間的差異最小化。
  3. 如申請專利範圍第1項之基板支撐件，進一步包含： 一切換裝置，其供電至該等熱元件的每一者，以藉由分時多工提供均時功率至該等熱元件的每一者。
  4. 如申請專利範圍第3項之基板支撐件，進一步包含電連接至電接地端的一隔離器，其中，該切換裝置係電連接至該隔離器。
  5. 如申請專利範圍第3項之基板支撐件，其中，該切換裝置係位於真空腔室中。
  6. 如申請專利範圍第4項之基板支撐件，其中，該隔離器係一隔離變壓器。
  7. 如申請專利範圍第1項之基板支撐件，進一步包含： 一主要加熱器層，包含一個以上主要加熱器； 該等熱元件係被支撐在一第一電氣絕緣層上，且該一個以上主要加熱器係電氣絕緣於該等熱元件及該等電線。
  8. 如申請專利範圍第3項之基板支撐件，其中，該切換裝置係一高側控制器，其在一RF電位上浮動，該基板支撐件進一步包含： 一光耦合器，連接至該高側控制器，以與一低側控制器數位通訊。
  9. 如申請專利範圍第3項之基板支撐件，其中，該等電線包含供電線路及電力回流線路，且該切換裝置將至少一電力回流線路電連接至一浮動參考端。
  10. 如申請專利範圍第3項之基板支撐件，其中，當電連接至該等熱元件的至少一供電線路係電連接至電源，且電連接至該等熱元件的至少一電力回流線路係電連接至浮動參考端時，該切換裝置係配置成開啟該等熱元件的其中一者。
  11. 如申請專利範圍第3項之基板支撐件，其中，該等電線包含供電線路及電力回流線路，且該切換裝置將所有電力回流線路電連接至一浮動參考端。
  12. 如申請專利範圍第3項之基板支撐件，其中，該切換裝置係配置成以至少1 Hz的頻率對每一熱元件選址。
  13. 如申請專利範圍第1項之基板支撐件，進一步包含複數感測器，配置成測量供應至該等熱元件的功率。
  14. 如申請專利範圍第13項之基板支撐件，其中，該等感測器包含電壓感測器及電流感測器的其中至少一者。
  15. 如申請專利範圍第3項之基板支撐件，其中，該等電線包含供電線路及電力回流線路，且該切換裝置係配置成在一供電線路受到供電期間維持所有電力回流線路與一浮動參考端之間的電連接，並調節傳送至被開啟之熱元件的功率。
  16. 如申請專利範圍第1項之基板支撐件，進一步包含一靜電夾箝（ESC）層，及溫度受控且由射頻（RF）供電的一底板。
  17. 如申請專利範圍第1項之基板支撐件，進一步包含一局部法拉第籠，該局部法拉第籠配置成容納高側電路。
  18. 如申請專利範圍第16項之基板支撐件，進一步包含一主要加熱器層，位在由射頻（RF）供電之該底板的上方。
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