JP5996760B2 - 加熱プレートおよび基板支持体 - Google Patents
加熱プレートおよび基板支持体 Download PDFInfo
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- JP5996760B2 JP5996760B2 JP2015216245A JP2015216245A JP5996760B2 JP 5996760 B2 JP5996760 B2 JP 5996760B2 JP 2015216245 A JP2015216245 A JP 2015216245A JP 2015216245 A JP2015216245 A JP 2015216245A JP 5996760 B2 JP5996760 B2 JP 5996760B2
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- substrate support
- power supply
- power
- heater
- heating plate
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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- Y10T29/49082—Resistor making
- Y10T29/49099—Coating resistive material on a base
Description
本発明は、以下の態様を含む。
[態様1]
半導体処理装置において半導体基板を支持するために用いられる基板支持アセンブリ用の加熱プレートであって、
第1の電気絶縁層と、
第1、第2、第3、および第4の平面ヒータゾーンを少なくとも含む複数の平面ヒータゾーンであって、その各々は1つまたは複数のヒータエレメントを有し、これらの平面ヒータゾーンは前記第1の電気絶縁層上に横方向に分布して基板上の空間的温度プロファイルを調整するように機能する、複数の平面ヒータゾーンと、
前記第1および第2の平面ヒータゾーンに電気的に接続された第1の導電性電力供給ラインと、前記第3および第4の平面ヒータゾーンに電気的に接続された第2の導電性電力供給ラインと、を少なくとも含む複数の電力供給ラインと、
前記第1および第3の平面ヒータゾーンに電気的に接続された第1の導電性電力リターンラインと、前記第2および第4の平面ヒータゾーンに電気的に接続された第2の導電性電力リターンラインと、を少なくとも含む複数の電力リターンラインと、を備える、加熱プレート。
[態様2]
態様1に記載の加熱プレートであって、
(a)前記平面ヒータゾーンおよび前記電力供給ラインは、第1の平面内にあり、前記電力リターンラインは、前記第1の平面に平行な第2の平面内にあり、前記第1の平面と前記第2の平面は、前記第1の電気絶縁層によって互いから分離されており、前記電力リターンラインは、前記第1電気絶縁層内に垂直に延在するビアによって前記平面ヒータゾーンに電気的に接続されている、あるいは、
(b)前記平面ヒータゾーンおよび前記電力リターンラインは、第1の平面内にあり、前記電力供給ラインは、前記第1の平面に平行な第2の平面内にあり、前記第1の平面と前記第2の平面は、前記第1の電気絶縁層によって互いから分離されており、前記電力供給ラインは、前記第1電気絶縁層内に垂直に延在するビアによって前記平面ヒータゾーンに電気的に接続されている、あるいは、
(c)前記平面ヒータゾーンは、第1の平面内にあり、前記電力供給ラインは、前記第1の平面に平行な第2の平面内にあり、前記電力リターンラインは、前記第1の平面に平行な第3の平面内にあり、前記第1の平面と前記第2の平面は、前記第1の電気絶縁層によって分離されており、前記第2の平面と前記第3の平面は、第2の電気絶縁層によって分離されており、前記電力供給ラインおよび前記電力リターンラインは、前記電気絶縁層を貫通して延在するビアによって前記平面ヒータゾーンに電気的に接続されている、加熱プレート。
[態様3]
態様1に記載の加熱プレートであって、
前記平面ヒータゾーンの大きさは、
(a)各平面ヒータゾーンが、前記半導体基板上に作られる4つの素子ダイ以下の大きさである、または、
(b)各平面ヒータゾーンが、前記半導体基板上に作られる2つの素子ダイ以下の大きさである、または、
(c)各平面ヒータゾーンが、前記半導体基板上に作られる1つの素子ダイ以下の大きさである、または、
(d)各平面ヒータゾーンの面積が、2〜3cm 2 の間である、または、
(e)当該加熱プレートに100〜400個の平面ヒータゾーンが含まれる、または、
(f)各平面ヒータゾーンが、1〜15cm 2 である、または、
(g)各平面ヒータゾーンが、16〜100cm 2 である、または、
(h)各平面ヒータゾーンの大きさが、前記半導体基板上の素子ダイの大きさおよび前記半導体基板の全体的大きさに応じて調整される、ようになっている、加熱プレート。
[態様4]
態様1に記載の加熱プレートであって、
前記第1の電気絶縁層は、ポリマー材料、セラミック材料、またはそれらの組み合わせを含む、加熱プレート。
[態様5]
態様1に記載の加熱プレートであって、
前記電力供給ラインと前記電力リターンラインの総数は、前記平面ヒータゾーンの総数以下である、加熱プレート。
[態様6]
態様1に記載の加熱プレートであって、
前記平面ヒータゾーンの総面積は、当該加熱プレートの上面の50%〜90%である、加熱プレート。
[態様7]
態様1に記載の加熱プレートであって、
前記平面ヒータゾーンは、矩形格子、六角格子、または同心環状に配置されており、
幅が少なくとも1ミリメートル、幅が最大で10ミリメートルの隙間によって、前記複数の平面ヒータゾーンは互いから分離されている、加熱プレート。
[態様8]
態様1に記載の加熱プレートであって、
各ヒータゾーンとこれに接続されている前記電力供給ラインとの間に、整流器が直列に接続されているか、または、各ヒータゾーンとこれに接続されている前記電力リターンラインとの間に、整流器が直列に接続されている、加熱プレート。
[態様9]
態様8に記載の加熱プレートであって、
前記整流器は半導体ダイオードである、加熱プレート。
[態様10]
基板支持アセンブリであって、
当該基板支持アセンブリ上で半導体基板を静電的に固定するように構成された、少なくとも1つのクランプ電極を有する静電固定層を含む静電チャック(ESC)と、
前記静電固定層の下方に配置された、態様1に記載の加熱プレートと、
断熱層によって前記加熱プレートの下側に取り付けられた冷却プレートと、を備える、基板支持アセンブリ。
[態様11]
態様10に記載の基板支持アセンブリであって、
(a)互いから電気的に絶縁されて、前記冷却プレート内の少なくとも1つの電力供給コンジットを通って延びる複数のリード線に、前記電力供給ラインが接続され、さらに、互いから電気的に絶縁されて、前記冷却プレート内の少なくとも1つの電力リターンコンジットを通って延びる複数のリード線に、前記電力リターンラインが接続されている、あるいは、
(b)前記電力供給ラインおよび前記電力リターンラインは、前記冷却プレートに埋め込まれた端子コネクタに接続されている、基板支持アセンブリ。
[態様12]
態様10に記載の基板支持アセンブリであって、
制御・電源回路をさらに備え、前記制御・電源回路は、任意の時点で、(a)前記第1のヒータゾーンのみ、(b)前記第2のヒータゾーンのみ、(c)前記第3のヒータゾーンのみ、(d)前記第4のヒータゾーンのみ、(e)前記第1と第2の平面ヒータゾーンのみ、(f)前記第1と第3の平面ヒータゾーンのみ、(g)前記第2と第4の平面ヒータゾーンのみ、(h)前記第3と第4の平面ヒータゾーンのみ、(i)前記平面ヒータゾーンのすべて、に選択的に電力を供給するように機能する、基板支持アセンブリ。
[態様13]
態様12に記載の基板支持アセンブリであって、
前記制御・電源回路と電気接地との間に直列に接続された、少なくとも1つのフィルタまたはアイソレータをさらに備える、基板支持アセンブリ。
[態様14]
態様13に記載の基板支持アセンブリであって、
前記少なくとも1つのフィルタまたはアイソレータは、変圧器である、基板支持アセンブリ。
[態様15]
態様10に記載の基板支持アセンブリであって、
前記加熱プレートの前記第1の電気絶縁層の上方または下方に配置された、少なくとも1つの主ヒータ層をさらに備え、
前記主ヒータ層は、前記加熱プレートの前記平面ヒータゾーン、前記電力供給ライン、前記電力リターンラインから電気的に絶縁されており、
前記主ヒータ層は、前記半導体基板の平均温度制御を提供する少なくとも1つのヒータを含み、
前記平面ヒータゾーンは、前記半導体基板の径方向および方位の温度プロファイル制御を、その処理中に提供する、基板支持アセンブリ。
[態様16]
態様1に記載の加熱プレートを製造する方法であって、
(a)セラミックシートに孔を形成することと、
(b)前記平面ヒータゾーン、前記電力供給ライン、および前記電力リターンラインを形成するため、前記セラミックシート上に、導電性粉末スラリーをスクリーン印刷すること、または予めカットした金属箔をプレスすること、または導電性粉末スラリーを噴霧することと、
(c)電力供給ビアおよび電力リターンビアを形成するため、前記セラミックシートの前記孔に導電性粉末スラリーを充填することと、
(d)前記セラミックシートを、揃えて、プレスし、接合することで、前記加熱プレートを形成することと、を含む、方法。
[態様17]
態様16に記載の加熱プレートを製造する方法であって、
(a)前記平面ヒータゾーンおよび前記電力供給ラインは、第1のセラミックシートの上面側に形成され、前記電力リターンラインは、前記第1のセラミックシートの下面側に形成され、前記第1のセラミックシートの上面の上に第2のセラミックシートが配置され、前記第1のセラミックシートの下方に第3のセラミックシートが配置され、前記第1、第2、第3のセラミックシートを一緒にプレスし、焼結させることで、ジョイントフリー加熱プレートを形成する、あるいは、
(b)前記平面ヒータゾーンは、第1のセラミックシートの上面側に形成され、前記電力供給ラインは、前記第1のセラミックシートの下方に配置された第2のセラミックシートの上面側に形成され、前記電力リターンラインは、前記第2のセラミックシートの下方に配置された第3のセラミックシートの上面側に形成され、前記第1のセラミックシートの上面の上に第4のセラミックシートが配置され、前記第1、第2、第3、第4のセラミックシートを一緒にプレスし、焼結させることで、ジョイントフリー加熱プレートを形成する、方法。
[態様18]
態様1に記載の加熱プレートを製造する方法であって、
構成部品層を作ることであって、
(a)ポリマー膜の上に金属シートを接合するステップと、
(b)パターン形成されるレジスト膜を前記金属シート上に塗布するステップであって、そのパターン形成されるレジスト膜の開孔部は、金属が除去されるべき位置に対応する、ステップと、
(c)前記レジスト膜の開孔部から露出した金属を除去するため、前記金属シートをエッチングするステップであって、このエッチングにより、前記平面ヒータゾーン、前記電力供給ライン、および/または前記電力リターンラインの導電性金属パターンを形成するステップと、
(d)前記レジスト膜を除去するステップと、を含む、構成部品層を作ることと、
ビア層を作ることであって、
(a)ポリマー膜に孔を打ち抜く、または切り抜くステップと、
(b)前記孔の中に導電性ビアを形成するステップと、を含む、ビア層を作ることと、
1つまたは複数の構成部品層と1つまたは複数のビア層を接合することにより、積層体を構成することと、
前記積層体の上面および/または下面に連続ポリマー膜を接合することにより、前記積層体を絶縁することと、を含む、方法。
[態様19]
態様1に記載の加熱プレートを製造する方法であって、
前記平面ヒータゾーン、前記電力供給ライン、および/または前記電力リターンラインを形成するため、金属、非晶質導電性無機材料、または導電性セラミックを前記第1の絶縁層の上に堆積させることを含む、方法。
[態様20]
態様10に記載の基板支持アセンブリを備えるプラズマ処理室内で、半導体基板をプラズマ処理する方法であって、
(a)前記処理室内に半導体基板を挿入して、前記基板支持アセンブリ上で前記半導体基板を位置決めすることと、
(b)限界寸法(CD)均一性に影響する処理条件を補償する温度プロファイルを決定することと、
(c)前記温度プロファイルに従うように、前記基板支持アセンブリを用いて前記半導体基板を加熱することと、
(d)プラズマに点火して、前記平面ヒータゾーンの独立に制御される加熱により温度プロファイルを制御しながら、前記半導体基板を処理することと、
(e)前記半導体基板を前記処理室から取り出して、別の半導体基板でステップ(a)〜(e)を繰り返すことと、を含む、方法。
[態様21]
態様11に記載の基板支持アセンブリであって、
前記端子コネクタは、バネ付きパススルーである、基板支持アセンブリ。
[態様22]
態様15に記載の基板支持アセンブリであって、
前記主ヒータ層は2つ以上のヒータを含む、基板支持アセンブリ。
Claims (20)
- 処理室内の半導体基板支持体に支持された半導体基板の径方向および方位の温度制御を行うように構成された加熱プレートであって、
前記半導体基板の温度プロファイルを調整するように機能する複数のヒータゾーンのアレイを有する第1の層であって、前記複数のヒータゾーンは、2以上の電力供給ラインと2以上の電力リターンラインとによって駆動され、各電力供給ラインは、前記複数のヒータゾーンの少なくとも2つに接続され、各電力リターンラインは、前記複数のヒータゾーンの少なくとも2つに接続され、各ヒータゾーンは、異なる電力供給ラインと電力リターンラインのペアに接続された、第1の層と、
前記処理室内において処理中に前記半導体基板の平均温度の制御を行うように機能する1または複数の主ヒータを有する第2の層と、
を備える加熱プレート。 - 基板支持体であって、
処理室内の半導体基板支持体に支持された半導体基板の径方向および方位の温度制御を行うように構成された加熱プレートであって、
前記半導体基板の温度プロファイルを調整するように機能する複数のヒータゾーンのアレイを有する第1の層であって、前記複数のヒータゾーンは、2以上の電力供給ラインと2以上の電力リターンラインとによって駆動され、各電力供給ラインは、前記複数のヒータゾーンの少なくとも2つに接続され、各電力リターンラインは、前記複数のヒータゾーンの少なくとも2つに接続され、各ヒータゾーンは、異なる電力供給ラインと電力リターンラインのペアに接続された、第1の層と、
前記処理室内において処理中に前記半導体基板の平均温度の制御を行うように機能する1または複数の主ヒータを有する第2の層と、
を備える加熱プレートと、
前記電力供給ラインの1つ、および前記電力リターンラインの1つを介して、前記複数のヒータゾーンのそれぞれに独立して電力を供給し、時分割多重化によって前記複数のヒータのそれぞれに時間平均された電力を供給するスイッチ装置と、前記加熱プレートの下で温度制御および高周波(RF)駆動されるベースプレートと、前記ベースプレートの下の局所フローティング・ファラデーケージ内に収容されたハイサイド回路と、
を備える基板支持体。 - 処理室内の半導体基板支持体に支持された半導体基板の径方向および方位の温度制御を行うように構成された加熱プレートであって、
前記半導体基板の温度プロファイルを調整するように機能する複数のヒータゾーンのアレイを有する第1の層であって、前記複数のヒータゾーンは、2以上の電力供給ラインと2以上の電力リターンラインとによって駆動され、各電力供給ラインは、前記複数のヒータゾーンの少なくとも2つに接続され、各電力リターンラインは、前記複数のヒータゾーンの少なくとも2つに接続され、各ヒータゾーンは、異なる電力供給ラインと電力リターンラインのペアに接続された、第1の層と、
前記処理室内において処理中に前記半導体基板の平均温度の制御を行うように機能する1または複数の主ヒータを有する第2の層と、を備え、
前記加熱プレートは、第1電気絶縁層であって、前記第1電気絶縁層に横方向に分布する複数の平面ヒータゾーンを備える第1電気絶縁層を有し、
少なくとも第1、第2、第3および第4の平面ヒータゾーンを備え、各平面ヒータゾーンは、1または複数のヒータ要素を有し、
前記電力供給ラインは、前記第1および第2の平面ヒータゾーンに電気的に接続される第1導電性電力供給ラインと、前記第3および第4の平面ヒータゾーンに電気的に接続される第2導電性電力供給ラインと、を少なくとも備え、
前記電力リターンラインは、前記第1および第3の平面ヒータゾーンに電気的に接続される第1導電性電力リターンラインと、前記第2および第4平面ヒータゾーンに電気的に接続される第2導電性電力リターンラインと、を備える、
加熱プレート。 - 請求項1に記載の加熱プレートであって、
前記加熱プレートは、前記半導体基板上の複数の位置で温度を測定するように構成された複数の温度センサを含む基板支持体に組み込まれており、
前記複数のヒータゾーンのアレイに接続された制御・電源回路であって、前記複数の温度センサから測定されたパラメータを受信し、前記測定されたパラメータと設定目標との差異を最小化するために前記複数のヒータゾーンに供給される電力を調整するように構成された制御・電源回路を備える、加熱プレート。 - 請求項2に記載の基板支持体であって、
更に、電気接地に接続されたアイソレータを備え、
前記スイッチ装置は、前記アイソレータに接続されている、基板支持体。 - 請求項5に記載の基板支持体であって、
前記スイッチ装置は、プラズマエッチング室内に位置する、基板支持体。 - 請求項5に記載の基板支持体であって、
前記アイソレータは、RFから前記スイッチ装置を分離する絶縁変圧器である、基板支持体。 - 処理室内の半導体基板支持体に支持された半導体基板の径方向および方位の温度制御を行うように構成された加熱プレートであって、
前記半導体基板の温度プロファイルを調整するように機能する複数のヒータゾーンのアレイを有する第1の層であって、前記複数のヒータゾーンは、2以上の電力供給ラインと2以上の電力リターンラインとによって駆動され、各電力供給ラインは、前記複数のヒータゾーンの少なくとも2つに接続され、各電力リターンラインは、前記複数のヒータゾーンの少なくとも2つに接続され、各ヒータゾーンは、異なる電力供給ラインと電力リターンラインのペアに接続された、第1の層と、
前記処理室内において処理中に前記半導体基板の平均温度の制御を行うように機能する1または複数の主ヒータを有する第2の層と、
を備え、
前記複数のヒータゾーンは、第1電気絶縁層上に支持され、
前記第2の層は、前記第1電気絶縁層の上または下に配置され、
前記1または複数の主ヒータは、前記複数のヒータゾーンのアレイ、前記電力供給ラインおよび前記電力リターンラインから電気的に絶縁されている、
加熱プレート。 - 請求項2に記載の基板支持体であって、
前記スイッチ装置は、RF電位でフロートするハイサイドコントローラであり、
前記基板支持体は、更に、ローサイドコントローラとのデジタル通信のために前記ハイサイドコントローラと接続された光カプラを備える、基板支持体。 - 請求項2に記載の基板支持体であって、
前記スイッチ装置は、少なくとも1つの電力リターンラインをフローティング基準に接続する、基板支持体。 - 請求項2に記載の基板支持体であって、
前記スイッチ装置は、前記複数のヒータゾーンの1つに接続された少なくとも1つの電力供給ラインが電源に接続されたとき、前記ヒータゾーンをオンにするように構成され、
前記ヒータゾーンに接続された少なくとも1つの電力供給ラインは、フローティング基準に接続されている、基板支持体。 - 請求項2に記載の基板支持体であって、
前記スイッチ装置は、全ての電力リターンラインをフローティング基準に接続する、基板支持体。 - 請求項2に記載の基板支持体であって、
前記スイッチ装置は、少なくとも1Hzの周波数で動作する、基板支持体。 - 請求項1に記載の加熱プレートを備える基板支持体であって、
前記基板支持体は、前記基板支持体上の異なる位置におけるパラメータと、前記複数のヒータゾーンの電力と、を測定するように構成された複数のセンサを備える、基板支持体。 - 請求項14に記載の基板支持体であって、
前記複数のセンサは、少なくとも1つの電圧および電流センサを含む、基板支持体。 - 請求項14に記載の基板支持体であって、
測定されたパラメータは、少なくとも温度の測定結果を含む、基板支持体。 - 請求項2に記載の基板支持体であって、
前記スイッチ装置は、1つの電力供給ラインに電源が接続され、オンされたヒータゾーンを加熱するために伝送された電力を調整している間、全ての電力リターンラインとフローティング基準との間の接続を維持するように構成されている、基板支持体。 - 基板支持体であって、
処理室内の半導体基板支持体に支持された半導体基板の径方向および方位の温度制御を行うように構成された加熱プレートであって、
前記半導体基板の温度プロファイルを調整するように機能する複数のヒータゾーンのアレイを有する第1の層であって、前記複数のヒータゾーンは、2以上の電力供給ラインと2以上の電力リターンラインとによって駆動され、各電力供給ラインは、前記複数のヒータゾーンの少なくとも2つに接続され、各電力リターンラインは、前記複数のヒータゾーンの少なくとも2つに接続され、各ヒータゾーンは、異なる電力供給ラインと電力リターンラインのペアに接続された、第1の層と、
前記処理室内において処理中に前記半導体基板の平均温度の制御を行うように機能する1または複数の主ヒータを有する第2の層と、
を備える加熱プレートと、
前記加熱プレート上の静電固定(ESC)層と、
を備える基板支持体。 - 請求項18に記載の基板支持体であって、
更に、前記加熱プレートの下で高周波(RF)駆動されるベースレートを備える、基板支持体。 - 請求項1に記載の加熱プレートであって、
前記複数のヒータゾーンは、セラミック材料に組み込まれた少なくとも100個の独立に制御可能なヒータゾーンを含む、加熱プレート。
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JP6351669B2 (ja) | 2018-07-04 |
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CN102668058A (zh) | 2012-09-12 |
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TWI642135B (zh) | 2018-11-21 |
US8637794B2 (en) | 2014-01-28 |
KR20160092035A (ko) | 2016-08-03 |
US10720346B2 (en) | 2020-07-21 |
KR101643800B1 (ko) | 2016-07-29 |
US9392643B2 (en) | 2016-07-12 |
US20110092072A1 (en) | 2011-04-21 |
US20140045337A1 (en) | 2014-02-13 |
JP5836959B2 (ja) | 2015-12-24 |
US20170229327A1 (en) | 2017-08-10 |
TWI552263B (zh) | 2016-10-01 |
JP2013508968A (ja) | 2013-03-07 |
WO2011049620A3 (en) | 2011-11-03 |
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JP2017037846A (ja) | 2017-02-16 |
TW201635425A (zh) | 2016-10-01 |
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