JP2019169636A - 基板加熱装置及びこれを用いた基板処理装置 - Google Patents
基板加熱装置及びこれを用いた基板処理装置 Download PDFInfo
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- JP2019169636A JP2019169636A JP2018057017A JP2018057017A JP2019169636A JP 2019169636 A JP2019169636 A JP 2019169636A JP 2018057017 A JP2018057017 A JP 2018057017A JP 2018057017 A JP2018057017 A JP 2018057017A JP 2019169636 A JP2019169636 A JP 2019169636A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67313—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6732—Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
- Resistance Heating (AREA)
Abstract
Description
前記基板支持部材の下方に設けられ、前記基板と略平行に設置されるとともに、所定の平面形状を有する加熱手段と、
前記加熱手段の外周部から下方に延びる側面部と、を有する。
20 熱処理炉
30 反応管
40 蓋体
50 側面ヒータ
60 ウエハボート
70、70a、70b 下部ヒータ
71、71a、71b 面状発熱体
72、72a、72b 側面部
73、73a、73b、74 線状抵抗発熱体
75 支柱
76 熱反射体
78 導通管
79 保温空間
110 制御部
Claims (9)
- 基板を略水平に支持可能な基板支持部材と、
前記基板支持部材の下方に設けられ、前記基板と略平行に設置されるとともに、所定の平面形状を有する加熱手段と、
前記加熱手段の外周部から下方に延びる側面部と、を有する基板加熱装置。 - 前記加熱手段の前記所定の平面形状は円形であり、
前記側面部は、全周に亘り同じ長さを有する円筒形状である請求項1に記載の基板加熱装置。 - 前記側面部は、不透明石英又は炭化珪素からなる請求項1又は2に記載の基板加熱装置。
- 前記側面部は、加熱機構を有する請求項1乃至3のいずれか一項に記載の基板加熱装置。
- 前記加熱手段と前記側面部の前記加熱機構は、独立して温度制御が可能である請求項4に記載の基板加熱装置。
- 前記加熱手段及び前記側面部で囲まれた空間内には、不透明石英又は炭化珪素からなる保温手段が設けられている請求項1乃至5のいずれか一項に記載の基板加熱装置。
- 前記保温手段は、複数枚の板状又はフィン状の形状を有する部材からなる請求項6に記載の基板加熱装置。
- 前記基板支持部材は、複数枚の基板を水平状態で鉛直方向に所定間隔を有して配列支持可能な構造を有する請求項1乃至7のいずれか一項に記載の基板加熱装置。
- 請求項1乃至8のいずれか一項に記載の基板加熱装置と、
前記基板支持部材、前記加熱手段及び前記側面部を覆う反応管と、
前記反応管の周囲に設けられ、前記反応管を加熱する第2の加熱手段と、を有する基板処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018057017A JP6952633B2 (ja) | 2018-03-23 | 2018-03-23 | 基板加熱装置及びこれを用いた基板処理装置 |
US16/358,828 US11094566B2 (en) | 2018-03-23 | 2019-03-20 | Substrate heating apparatus including heater under substrate support and substrate processing apparatus using the same |
CN201910217529.1A CN110299308B (zh) | 2018-03-23 | 2019-03-21 | 基板加热装置和使用了该基板加热装置的基板处理装置 |
TW108109694A TWI780314B (zh) | 2018-03-23 | 2019-03-21 | 基板加熱裝置及使用其之基板處理裝置 |
KR1020190033044A KR102435774B1 (ko) | 2018-03-23 | 2019-03-22 | 기판 가열 장치 및 이것을 이용한 기판 처리 장치 |
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JP2018057017A JP6952633B2 (ja) | 2018-03-23 | 2018-03-23 | 基板加熱装置及びこれを用いた基板処理装置 |
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JP2019169636A true JP2019169636A (ja) | 2019-10-03 |
JP6952633B2 JP6952633B2 (ja) | 2021-10-20 |
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US (1) | US11094566B2 (ja) |
JP (1) | JP6952633B2 (ja) |
KR (1) | KR102435774B1 (ja) |
CN (1) | CN110299308B (ja) |
TW (1) | TWI780314B (ja) |
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US11024523B2 (en) * | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
WO2020092198A1 (en) * | 2018-10-28 | 2020-05-07 | Applied Materials, Inc. | Processing chamber with annealing mini-environment |
CN113517192B (zh) * | 2021-07-14 | 2023-10-20 | 长江存储科技有限责任公司 | 晶圆处理方法和制造半导体器件的方法 |
Citations (8)
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JPH02218117A (ja) * | 1989-02-17 | 1990-08-30 | Tel Sagami Ltd | 熱処理装置 |
JP2002043226A (ja) * | 2000-07-24 | 2002-02-08 | Tokyo Electron Ltd | 熱処理装置および熱処理方法 |
JP2003324045A (ja) * | 2002-02-28 | 2003-11-14 | Tokyo Electron Ltd | 熱処理装置 |
JP2004031846A (ja) * | 2002-06-28 | 2004-01-29 | Shin Etsu Handotai Co Ltd | 縦型熱処理装置 |
JP2004119510A (ja) * | 2002-09-24 | 2004-04-15 | Tokyo Electron Ltd | 熱処理装置 |
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JP3598032B2 (ja) * | 1999-11-30 | 2004-12-08 | 東京エレクトロン株式会社 | 縦型熱処理装置及び熱処理方法並びに保温ユニット |
JP3833439B2 (ja) | 2000-05-02 | 2006-10-11 | 株式会社ノリタケカンパニーリミテド | 大型基板用多段加熱炉、及び両面加熱式遠赤外線パネルヒーター、並びに該加熱炉内の給排気方法 |
JP4298899B2 (ja) * | 2000-06-30 | 2009-07-22 | 東京エレクトロン株式会社 | 縦型熱処理装置 |
US6787377B2 (en) | 2000-07-25 | 2004-09-07 | Tokyo Electron Limited | Determining method of thermal processing condition |
JP2006114780A (ja) * | 2004-10-15 | 2006-04-27 | Tokyo Electron Ltd | 薄膜形成装置の洗浄方法、薄膜形成装置及びプログラム |
JP4994724B2 (ja) * | 2006-07-07 | 2012-08-08 | 株式会社東芝 | 成膜装置及び成膜方法 |
JP5933399B2 (ja) * | 2012-09-07 | 2016-06-08 | 東京エレクトロン株式会社 | 熱処理装置 |
CN105914163B (zh) * | 2015-02-25 | 2020-03-24 | 株式会社国际电气 | 衬底处理装置、半导体器件的制造方法以及加热部 |
JP6685216B2 (ja) * | 2016-01-26 | 2020-04-22 | 東京エレクトロン株式会社 | 成膜装置、成膜方法、プログラム及びコンピュータ可読記憶媒体 |
JP6704837B2 (ja) * | 2016-10-31 | 2020-06-03 | 日本特殊陶業株式会社 | 保持装置 |
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- 2018-03-23 JP JP2018057017A patent/JP6952633B2/ja active Active
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2019
- 2019-03-20 US US16/358,828 patent/US11094566B2/en active Active
- 2019-03-21 CN CN201910217529.1A patent/CN110299308B/zh active Active
- 2019-03-21 TW TW108109694A patent/TWI780314B/zh active
- 2019-03-22 KR KR1020190033044A patent/KR102435774B1/ko active IP Right Grant
Patent Citations (8)
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JPH02218117A (ja) * | 1989-02-17 | 1990-08-30 | Tel Sagami Ltd | 熱処理装置 |
JP2002043226A (ja) * | 2000-07-24 | 2002-02-08 | Tokyo Electron Ltd | 熱処理装置および熱処理方法 |
JP2003324045A (ja) * | 2002-02-28 | 2003-11-14 | Tokyo Electron Ltd | 熱処理装置 |
JP2004031846A (ja) * | 2002-06-28 | 2004-01-29 | Shin Etsu Handotai Co Ltd | 縦型熱処理装置 |
JP2004119510A (ja) * | 2002-09-24 | 2004-04-15 | Tokyo Electron Ltd | 熱処理装置 |
JP2012253222A (ja) * | 2011-06-03 | 2012-12-20 | Hitachi Kokusai Electric Inc | 抵抗加熱式ヒータの寿命予測方法及び熱処理装置 |
JP2013093461A (ja) * | 2011-10-26 | 2013-05-16 | Ulvac Japan Ltd | 成膜装置 |
JP2016536803A (ja) * | 2013-09-16 | 2016-11-24 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 温度プロファイル制御装置を有する加熱基板支持体 |
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Publication number | Publication date |
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KR20190111832A (ko) | 2019-10-02 |
US11094566B2 (en) | 2021-08-17 |
KR102435774B1 (ko) | 2022-08-23 |
TWI780314B (zh) | 2022-10-11 |
CN110299308A (zh) | 2019-10-01 |
JP6952633B2 (ja) | 2021-10-20 |
US20190295867A1 (en) | 2019-09-26 |
TW201941274A (zh) | 2019-10-16 |
CN110299308B (zh) | 2023-08-18 |
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