JP6685216B2 - 成膜装置、成膜方法、プログラム及びコンピュータ可読記憶媒体 - Google Patents
成膜装置、成膜方法、プログラム及びコンピュータ可読記憶媒体 Download PDFInfo
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- 230000007246 mechanism Effects 0.000 claims description 18
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- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 10
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
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- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
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- 229910052719 titanium Inorganic materials 0.000 description 2
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XZPXMWMVWDSEMY-UHFFFAOYSA-N 2,2,3-trimethyloctane Chemical compound CCCCCC(C)C(C)(C)C XZPXMWMVWDSEMY-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- CGRVKSPUKAFTBN-UHFFFAOYSA-N N-silylbutan-1-amine Chemical compound CCCCN[SiH3] CGRVKSPUKAFTBN-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
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- 210000000170 cell membrane Anatomy 0.000 description 1
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- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- UFQXGXDIJMBKTC-UHFFFAOYSA-N oxostrontium Chemical compound [Sr]=O UFQXGXDIJMBKTC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
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Description
本実施形態の成膜装置について、図1から図5に基づき説明する。図1は、本実施形態の成膜装置の概略断面図である。図2は、本実施形態の成膜装置の概略斜視図である。図3は、本実施形態の成膜装置の概略平面図である。なお、図2及び図3では、説明の便宜上、天板の図示を省略している。
本実施形態の成膜装置におけるウエハWの回転機構について、図6から図10に基づき説明する。図6及び図7は本実施形態の成膜装置におけるウエハの回転機構を示す概略断面図であり、図2及び図3における6個の凹部2aのうちの1個の凹部2aが形成された部分を拡大した図である。図6は、回転テーブル2を上昇させてウエハWに成膜を行うときの回転テーブル2と蓋部材7aとの位置関係を示している。図7は、回転テーブル2を下降させてウエハWを回転(自転)させるときの回転テーブル2と蓋部材7aとの位置関係を示している。
本実施形態の成膜装置の動作(成膜方法)について説明する。本実施形態の成膜方法は、搬入工程と、成膜工程と、自転工程と、搬出工程とを有し、成膜工程と自転工程とを交互に複数回繰り返すことにより、ウエハWに所定の膜厚の膜を堆積させる方法である。以下では、一例として、BTBASガスとO3ガスとを用いてシリコン酸化膜を成膜する方法について説明する。
まず、図示しないゲートバルブを開き、外部から搬送アーム10により搬送口15を介してウエハWを基板支持部材91の載置部91aに受け渡す。この受け渡しは、載置部91aが搬送口15に対向する位置に停止したときに載置部91aの底面の貫通穴を介して真空容器1の底部側から不図示の昇降ピンが昇降することにより行われる。このようなウエハWの受け渡しを、回転テーブル2を間欠的に回転させて行い、基板支持部材91の6つの載置部91aにそれぞれウエハWを載置する。
ウエハWを搬入した後、ゲートバルブを閉じ、真空ポンプ64により真空容器1内を予め設定された圧力にまで排気する。次いで、回転テーブル2を時計回りに回転(公転)させる。回転テーブル2及び基板支持部材91は、ヒータユニット7により予め所定の温度に加熱されており、ウエハWは載置部91aに載置されることにより加熱される。ウエハWが予め設定された所定の温度に加熱された後、反応ガスノズル31から第1の処理領域P1に第1の反応ガス(BTBASガス)を供給し、反応ガスノズル32から第2の処理領域P2に第2の反応ガス(O3ガス)を供給する。また、分離ガスノズル41、42から分離ガス(N2ガス)を供給する。
回転テーブル2の回転によりウエハWが第1の処理領域P1及び第2の処理領域P2を交互に所定の回数通過した後、ウエハWの回転(自転)工程を行う。
成膜工程と自転工程とを交互に複数回繰り返すことにより、ウエハWの上面に所定の膜厚を有するシリコン酸化膜を堆積した後、BTBASガス及びO3ガスの供給を停止し、回転テーブル2の回転を停止させる。次いで、真空容器1内をパージする。次いで、搬入工程における動作と逆の動作によりウエハWを搬送アーム10により真空容器1から順次搬出する。
2 回転テーブル
2a 凹部
7 ヒータユニット
7a 蓋部材
16 ベローズ
23 駆動部
91 基板支持部材
91a 載置部
92 フランジ部
93 第1の突起部
94 軸受部材
95 第2の突起部
96 滑り台座
100 制御部
W ウエハ
Claims (21)
- 容器内にて互いに反応する少なくとも2つの反応ガスを順番に供給して基板に膜を堆積させる成膜装置であって、
前記容器内に回転可能に設けられ、底部に貫通穴を有する凹部が上面に形成された回転テーブルと、
前記凹部に着脱可能に載置され、上面に前記基板が載置される載置部を有し、下面に第1の突起部を有する基板支持部材と、
前記回転テーブルを昇降させ、かつ、回転させる駆動機構と、
前記容器内において前記回転テーブルよりも下方に設けられ、上面に第2の突起部を有する蓋部材と、
前記駆動機構により前記回転テーブルを下降させた後、前記回転テーブルを回転させて前記第1の突起部と前記第2の突起部とを接触させ、前記基板支持部材を移動させることで、前記回転テーブルに対して前記基板支持部材を所定の角度だけ回転させる制御部と
を備える成膜装置。 - 前記制御部は、前記駆動機構により前記凹部から前記基板支持部材が離間するように前記回転テーブルを下降させる、
請求項1に記載の成膜装置。 - 前記蓋部材は、前記第1の突起部に対する摩擦係数が小さい材料により形成された滑り台座を含み、前記滑り台座の上面に前記第2の突起部が設けられている、
請求項1又は2に記載の成膜装置。 - 前記第1の突起部はサファイア又は石英により形成され、前記滑り台座はサファイアにより形成されている、
請求項3に記載の成膜装置。 - 前記第1の突起部と前記第2の突起部との間の摺動面には、炭化チタンコーティングが施されている、
請求項4に記載の成膜装置。 - 前記第1の突起部と前記滑り台座との間の摺動面には、炭化チタンコーティングが施されている、
請求項4又は5に記載の成膜装置。 - 前記基板支持部材を、前記基板支持部材の回転軸回りに回転自在に支持する軸受部材を備え、
前記基板支持部材は、前記軸受部材を介して前記回転テーブルに載置されている、
請求項1乃至6のいずれか一項に記載の成膜装置。 - 前記基板支持部材の下面の中心部には、凸状に形成されたフランジ部が設けられており、
前記軸受部材は円環板状の部分を有し、前記フランジ部を前記基板支持部材の回転軸回りに回転自在に支持する、
請求項7に記載の成膜装置。 - 前記軸受部材は、サファイアにより形成されている、
請求項8に記載の成膜装置。 - 前記軸受部材と前記フランジ部との間の摺動面には、炭化チタンコーティングが施されている、
請求項9に記載の成膜装置。 - 前記第1の突起部は、前記基板支持部材の周方向に沿って等間隔に設けられており、
前記第2の突起部は、前記蓋部材の前記第1の突起部と対応する位置に設けられている、
請求項1乃至10のいずれか一項に記載の成膜装置。 - 前記蓋部材の下方に設けられ、前記載置部に載置された前記基板を加熱する加熱手段を有する、
請求項1乃至11のいずれか一項に記載の成膜装置。 - 前記第1の突起部は、円柱状に形成されている、
請求項1乃至12のいずれか一項に記載の成膜装置。 - 前記第2の突起部は、前記蓋部材の径方向に延びる凸状に形成されている、
請求項1乃至13のいずれか一項に記載の成膜装置。 - 容器内にて互いに反応する少なくとも2つの反応ガスを順番に供給して基板に膜を堆積させる成膜方法であって、
前記容器内に回転可能に設けられ、底部に貫通穴を有する凹部が上面に形成された回転テーブルの前記凹部に着脱可能に載置され、上面に前記基板が載置される載置部を有し、下面に複数の第1の突起部を有する基板支持部材の前記載置部に前記基板を載置する搬入工程と、
前記回転テーブルを回転させると共に、前記回転テーブルの周方向に互いに分離領域を介して離間した領域にそれぞれ第1の反応ガス及び第2の反応ガスを供給することにより前記基板に成膜を行う成膜工程と、
前記第1の反応ガス及び前記第2の反応ガスの供給を停止すると共に前記回転テーブルの回転を停止するステップと、
回転を停止した前記回転テーブルを下降させて、前記容器内において前記回転テーブルよりも下方に設けられ、上面に複数の第2の突起部を有する蓋部材に前記第1の突起部を接触させるステップと、
前記回転テーブルを回転させて前記第1の突起部と前記第2の突起部とを接触させることで、前記回転テーブルに対して前記基板支持部材を所定の角度だけ回転させるステップと、
前記回転テーブルに対して前記基板支持部材を所定の角度だけ回転させた後、前記回転テーブルを上昇させるステップと、
を含む自転工程と
を有する、
成膜方法。 - 前記蓋部材に前記第1の突起部を接触させるステップにおいて、前記凹部から前記基板支持部材が離間するように前記回転テーブルを下降させる、
請求項15に記載の成膜方法。 - 前記成膜工程及び前記自転工程を交互に複数回繰り返す、
請求項15又は16に記載の成膜方法。 - 前記膜の膜厚が目標膜厚に達するまでの間に前記自転工程において回転された前記基板支持部材の回転角度の合計が360°の整数倍である、
請求項17に記載の成膜方法。 - 前記所定の角度は、60°以上120°以下である、
請求項15乃至18のいずれか一項に記載の成膜方法。 - 請求項1乃至14のいずれか一項に記載の成膜装置に請求項15乃至19のいずれか一項に記載の成膜方法を実行させる、プログラム。
- 請求項20に記載のプログラムを格納した、コンピュータ可読記憶媒体。
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