JP5933399B2 - 熱処理装置 - Google Patents
熱処理装置 Download PDFInfo
- Publication number
- JP5933399B2 JP5933399B2 JP2012197717A JP2012197717A JP5933399B2 JP 5933399 B2 JP5933399 B2 JP 5933399B2 JP 2012197717 A JP2012197717 A JP 2012197717A JP 2012197717 A JP2012197717 A JP 2012197717A JP 5933399 B2 JP5933399 B2 JP 5933399B2
- Authority
- JP
- Japan
- Prior art keywords
- lid
- leg
- heat treatment
- gap
- reaction tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000010438 heat treatment Methods 0.000 title claims description 51
- 238000006243 chemical reaction Methods 0.000 claims description 37
- 239000007789 gas Substances 0.000 claims description 26
- 239000011261 inert gas Substances 0.000 claims description 26
- 238000012545 processing Methods 0.000 claims description 17
- 235000012431 wafers Nutrition 0.000 description 16
- 230000007246 mechanism Effects 0.000 description 11
- 238000010926 purge Methods 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000003028 elevating effect Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 229910000943 NiAl Inorganic materials 0.000 description 1
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- 239000011553 magnetic fluid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910000601 superalloy Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D7/00—Forming, maintaining, or circulating atmospheres in heating chambers
- F27D7/02—Supplying steam, vapour, gases, or liquids
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
- F27B17/0016—Chamber type furnaces
- F27B17/0025—Especially adapted for treating semiconductor wafers
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D7/00—Forming, maintaining, or circulating atmospheres in heating chambers
- F27D7/06—Forming or maintaining special atmospheres or vacuum within heating chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Description
W 半導体ウエハ(被処理体)
g 隙間
2 熱処理炉
3 炉口
4 反応管
5 蓋体
5A 円筒遮へい体
5a 囲みリング
5b 支持リング
16 熱処理用ボート
17 ボート本体
18 脚部
18a 脚部本体
19 下方フランジ
20 連結ピン
21 孔部
26 回転導入機構
27 回転軸部
28 ハウジング
51 不活性ガス導入管
Claims (7)
- 下方に炉口を有する反応管と、
反応管の炉口を密閉する蓋体と、
蓋体に脚部を介して支持される熱処理ボートと、
蓋体を貫通して延び、脚部の下方部に連結されて脚部を回転させる回転軸部とを備え、
蓋体は、脚部の下方部を囲むとともに上方へ突出する囲みリングを有し、
蓋体と回転軸部との間に、不活性ガス供給部から不活性ガスを供給し、脚部の下方部と蓋体の囲みリングとの間に間隙が形成され、この間隙は垂直方向に沿って延び、不活性ガスはこの垂直方向に沿って延びる間隙を通って反応管内へ排出されることを特徴とする熱処理装置。 - 脚部の下方部と蓋体の囲みリングとの間の間隙は、0.2mm〜2.0mmの大きさを有することを特徴とする請求項1記載の熱処理装置。
- 囲みリングの高さは、10mm〜40mmとなっていることを特徴とする請求項1または2記載の熱処理装置。
- 蓋体に、脚部を外方から囲んで反応管内の処理ガスが脚部の下方部と蓋体の囲みリングとの間に侵入することを防止する円筒遮へい体を設けたことを特徴とする請求項1乃至3のいずれか記載の熱処理装置。
- 蓋体の下部に、回転軸部を囲むハウジングが固着され、不活性ガス供給部はこのハウジングに取付けられていることを特徴とする請求項1乃至4のいずれか記載の熱処理装置。
- 脚部の下方部と回転軸部との間に連結ピンが連結され、この連結ピンは下方部内に埋設されて外方へ露出しないことを特徴とする請求項1乃至5のいずれか記載の熱処理装置。
- 脚部は脚部本体と、下方部とを有し、脚部の下方部は、脚部本体から半径方向外方へ突出する下方フランジからなることを特徴とする請求項1乃至6のいずれか記載の熱処理装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012197717A JP5933399B2 (ja) | 2012-09-07 | 2012-09-07 | 熱処理装置 |
KR1020130106661A KR101687864B1 (ko) | 2012-09-07 | 2013-09-05 | 열처리 장치 |
TW102132113A TWI594328B (zh) | 2012-09-07 | 2013-09-06 | 熱處理裝置 |
US14/020,190 US10281214B2 (en) | 2012-09-07 | 2013-09-06 | Heat treatment apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012197717A JP5933399B2 (ja) | 2012-09-07 | 2012-09-07 | 熱処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014053492A JP2014053492A (ja) | 2014-03-20 |
JP5933399B2 true JP5933399B2 (ja) | 2016-06-08 |
Family
ID=50233609
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012197717A Active JP5933399B2 (ja) | 2012-09-07 | 2012-09-07 | 熱処理装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10281214B2 (ja) |
JP (1) | JP5933399B2 (ja) |
KR (1) | KR101687864B1 (ja) |
TW (1) | TWI594328B (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6616258B2 (ja) * | 2016-07-26 | 2019-12-04 | 株式会社Kokusai Electric | 基板処理装置、蓋部カバーおよび半導体装置の製造方法 |
TWI616555B (zh) * | 2017-01-17 | 2018-03-01 | 漢民科技股份有限公司 | 應用於半導體設備之噴氣裝置 |
JP6916766B2 (ja) * | 2018-08-27 | 2021-08-11 | 株式会社Kokusai Electric | 基板処理装置及び半導体装置の製造方法 |
JP6952633B2 (ja) * | 2018-03-23 | 2021-10-20 | 東京エレクトロン株式会社 | 基板加熱装置及びこれを用いた基板処理装置 |
JP7317912B2 (ja) * | 2021-09-21 | 2023-07-31 | 株式会社Kokusai Electric | 炉口部構造、基板処理装置、および半導体装置の製造方法 |
CN115632029B (zh) * | 2022-12-22 | 2023-03-17 | 河北博特半导体设备科技有限公司 | 一种高精度晶圆承片台的陶瓷旋转台结构 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5065495A (en) * | 1987-06-10 | 1991-11-19 | Tokyo Electron Limited | Method for holding a plate-like member |
US5016567A (en) * | 1988-08-26 | 1991-05-21 | Tel Sagami Limited | Apparatus for treatment using gas |
JPH06204157A (ja) * | 1992-12-25 | 1994-07-22 | Tokyo Electron Tohoku Ltd | 縦型熱処理装置 |
US5799951A (en) * | 1996-11-21 | 1998-09-01 | Varian Associates, Inc. | Rotating sealing device |
JP3556804B2 (ja) * | 1997-05-20 | 2004-08-25 | 東京エレクトロン株式会社 | 処理装置及び処理方法 |
JP3798915B2 (ja) * | 1998-09-30 | 2006-07-19 | 東京エレクトロン株式会社 | 縦型熱処理装置 |
TW430866B (en) * | 1998-11-26 | 2001-04-21 | Tokyo Electron Ltd | Thermal treatment apparatus |
JP3579278B2 (ja) * | 1999-01-26 | 2004-10-20 | 東京エレクトロン株式会社 | 縦型熱処理装置及びシール装置 |
JP3881567B2 (ja) * | 2002-03-05 | 2007-02-14 | 東京エレクトロン株式会社 | 熱処理用ボート及び縦型熱処理装置 |
US7794574B2 (en) * | 2005-04-14 | 2010-09-14 | Tango Systems, Inc. | Top shield for sputtering system |
US8246749B2 (en) * | 2005-07-26 | 2012-08-21 | Hitachi Kokusai Electric, Inc. | Substrate processing apparatus and semiconductor device producing method |
-
2012
- 2012-09-07 JP JP2012197717A patent/JP5933399B2/ja active Active
-
2013
- 2013-09-05 KR KR1020130106661A patent/KR101687864B1/ko active IP Right Grant
- 2013-09-06 TW TW102132113A patent/TWI594328B/zh active
- 2013-09-06 US US14/020,190 patent/US10281214B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TW201430954A (zh) | 2014-08-01 |
JP2014053492A (ja) | 2014-03-20 |
TWI594328B (zh) | 2017-08-01 |
US10281214B2 (en) | 2019-05-07 |
US20140072924A1 (en) | 2014-03-13 |
KR20140032905A (ko) | 2014-03-17 |
KR101687864B1 (ko) | 2016-12-19 |
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