JP2004228565A - 半導体製造装置用部品および半導体製造装置 - Google Patents
半導体製造装置用部品および半導体製造装置 Download PDFInfo
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- JP2004228565A JP2004228565A JP2003432153A JP2003432153A JP2004228565A JP 2004228565 A JP2004228565 A JP 2004228565A JP 2003432153 A JP2003432153 A JP 2003432153A JP 2003432153 A JP2003432153 A JP 2003432153A JP 2004228565 A JP2004228565 A JP 2004228565A
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- Prior art keywords
- susceptor
- heating
- heating element
- component
- semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 51
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 238000010438 heat treatment Methods 0.000 claims abstract description 109
- 238000009826 distribution Methods 0.000 abstract description 11
- 235000012431 wafers Nutrition 0.000 description 23
- 239000000919 ceramic Substances 0.000 description 20
- 238000000034 method Methods 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 230000005855 radiation Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 5
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 230000036581 peripheral resistance Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
Abstract
【解決手段】半導体製造装置用チャンバー2において、半導体Wを載置するためのサセプター5の周囲に設置されるべき半導体製造装置用部品3、4、10を提供する。部品3、4、10は自己発熱機能を有する。好ましくは、部品3、4、10が発熱素子を備えており、更に好ましくは、発熱素子が部品内に埋設されている。
【選択図】 図1
Description
(1)赤外線ランプを用いてチャンバー外から半導体ウエハーを加熱する方式(間接加熱方式)
(2) セラミックヒーター上に半導体ウエハーを載置して加熱する方式(直接加熱方式)
セラミックヒーターとしては、いわゆるマルチゾーン(多数ゾーン)と呼ばれるものが知られている。マルチゾーンにおいては、セラミックス基体中に、高融点金属からなる内周側抵抗発熱体と外周側抵抗発熱体とを埋設し、これらの抵抗発熱体にそれぞれ別個の電流導入端子を接続し、各抵抗発熱体にそれぞれ独立して電圧を印加することにより、内周抵抗発熱体および外周側抵抗発熱体を独立に制御する。
(1) ヒーター基体からチャンバー内の雰囲気への熱伝達
(2) ヒーター基体からシャフト(ヒーター支持部材)端冷却部への熱伝導
(3) ヒーター基体から、チャンバー内の部品(例えばガス供給板、ライナー)への輻射伝熱
更に次の利点も得られる。即ち、経時変化によって、サセプター5やその他のチャンバー内部品の表面に膜が体積したり、腐食によって表面荒さが変化した場合には、サセプターからチャンバー内雰囲気や部品への放熱条件が変化し、この結果サセプターの加熱面の温度分布が増大し易い。しかし、このような場合にも、本発明によれば、各部品内の発熱素子への供給電力を増大または減少させることによって、サセプターからチャンバー内部品への放熱条件の変化を相殺し、加熱面の温度分布の増大を抑制し易い。
窒化アルミニウム焼結体中にモリブデン製のコイルスプリング状発熱線7を埋設してヒーター5を得る。ヒーター5をセラミックス製の支持部材30によってチャンバー2に取り付ける。また、ガス供給板、ライナーおよび昇降ピンリフターをチャンバー2内に装入し、固定する。これらの各部品には発熱素子は埋設されていない。
比較例1と同様にしてウエハーの温度差を測定する。ただし、実施例1においては、図2〜図7に示したガス供給板3、ライナー4および昇降ピンリフター10を使用し、各発熱素子へと電力を供給する。ここで、各発熱素子への電力供給量を表1に示す。電力の合計量は約2000Wである。
Claims (8)
- 半導体製造装置用チャンバー内において、半導体を載置するためのサセプターの周囲に設置されるべき半導体製造装置用部品であって、
自己発熱機能を有することを特徴とする、半導体製造装置用部品。 - 発熱素子を備えていることを特徴とする、請求項1記載の部品。
- 前記発熱素子が前記部品内に埋設されていることを特徴とする、請求2記載の部品。
- ガス供給板であることを特徴とする、請求項1〜3のいずれか一つの請求項に記載の部品。
- ライナーであることを特徴とする、請求項1〜3のいずれか一つの請求項に記載の部品。
- 昇降ピンリフターであることを特徴とする、請求項1〜3のいずれか一つの請求項に記載の部品。
- チャンバー、半導体を載置するためのサセプター、およびこのサセプターの周囲に設置されるべき半導体製造装置用部品を備えており、前記部品が、請求項1〜6のいずれか一つの請求項に記載の部品を含むことを特徴とする、半導体製造装置。
- 前記サセプターが発熱素子を備えていることを特徴とする、請求項7記載の装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US44152303P | 2003-01-21 | 2003-01-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004228565A true JP2004228565A (ja) | 2004-08-12 |
JP4671262B2 JP4671262B2 (ja) | 2011-04-13 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003432153A Expired - Lifetime JP4671262B2 (ja) | 2003-01-21 | 2003-12-26 | 半導体加熱装置 |
Country Status (2)
Country | Link |
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US (1) | US7220320B2 (ja) |
JP (1) | JP4671262B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015518627A (ja) * | 2012-03-20 | 2015-07-02 | モーメンティブ・パフォーマンス・マテリアルズ・インク | 抵抗ヒーター |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6758143B2 (ja) * | 2016-09-29 | 2020-09-23 | 日本特殊陶業株式会社 | 加熱装置 |
US10679873B2 (en) * | 2016-09-30 | 2020-06-09 | Ngk Spark Plug Co., Ltd. | Ceramic heater |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2000036490A (ja) * | 1998-07-16 | 2000-02-02 | Tokyo Electron Yamanashi Ltd | プラズマ処理装置およびその方法 |
JP2000150330A (ja) * | 1998-11-04 | 2000-05-30 | Tokyo Electron Ltd | 半導体装置の製造方法及び半導体製造装置 |
JP2001102375A (ja) * | 1999-07-28 | 2001-04-13 | Tokyo Electron Ltd | 基板処理装置及び基板処理方法 |
JP2001144033A (ja) * | 1999-11-17 | 2001-05-25 | Tokyo Electron Ltd | プリコート膜の形成方法、成膜装置のアイドリング方法、載置台構造及び成膜装置 |
JP2001274103A (ja) * | 2000-01-20 | 2001-10-05 | Sumitomo Electric Ind Ltd | 半導体製造装置用ガスシャワー体 |
JP2002083801A (ja) * | 2000-09-07 | 2002-03-22 | Oki Electric Ind Co Ltd | 半導体製造装置 |
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US3083698A (en) * | 1960-06-30 | 1963-04-02 | Bendix Corp | Fluid pressure motor construction |
US3158930A (en) * | 1961-05-01 | 1964-12-01 | Bendix Corp | Method of manufacturing assembly fluid pressure motors |
US3146682A (en) * | 1962-04-20 | 1964-09-01 | Bendix Corp | Fluid pressure motor construction |
US4366612A (en) * | 1980-12-22 | 1983-01-04 | The Bendix Corporation | Method of fastening a first shell to a second shell with a diaphragm bead therebetween |
DE3866987D1 (de) * | 1987-07-21 | 1992-01-30 | Bendix Europ Services Tech | Zusammenbauverfahren fuer einen servomotor und nach diesem verfahren zusammengebauter servomotor. |
DE3942211A1 (de) * | 1989-12-21 | 1991-06-27 | Teves Gmbh Alfred | Gehaeuse fuer einen pneumatischen kraftverstaerker und verfahren zu dessen herstellung |
JP3181364B2 (ja) * | 1992-03-25 | 2001-07-03 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JPH05326112A (ja) | 1992-05-21 | 1993-12-10 | Shin Etsu Chem Co Ltd | 複層セラミックスヒーター |
US5798016A (en) * | 1994-03-08 | 1998-08-25 | International Business Machines Corporation | Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability |
JP3257328B2 (ja) * | 1995-03-16 | 2002-02-18 | 株式会社日立製作所 | プラズマ処理装置及びプラズマ処理方法 |
US6364954B2 (en) * | 1998-12-14 | 2002-04-02 | Applied Materials, Inc. | High temperature chemical vapor deposition chamber |
US6390567B1 (en) * | 2001-08-20 | 2002-05-21 | Robert Bosch Corporation | Housing for a brake booster |
-
2003
- 2003-12-26 JP JP2003432153A patent/JP4671262B2/ja not_active Expired - Lifetime
-
2004
- 2004-01-08 US US10/753,625 patent/US7220320B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000036490A (ja) * | 1998-07-16 | 2000-02-02 | Tokyo Electron Yamanashi Ltd | プラズマ処理装置およびその方法 |
JP2000150330A (ja) * | 1998-11-04 | 2000-05-30 | Tokyo Electron Ltd | 半導体装置の製造方法及び半導体製造装置 |
JP2001102375A (ja) * | 1999-07-28 | 2001-04-13 | Tokyo Electron Ltd | 基板処理装置及び基板処理方法 |
JP2001144033A (ja) * | 1999-11-17 | 2001-05-25 | Tokyo Electron Ltd | プリコート膜の形成方法、成膜装置のアイドリング方法、載置台構造及び成膜装置 |
JP2001274103A (ja) * | 2000-01-20 | 2001-10-05 | Sumitomo Electric Ind Ltd | 半導体製造装置用ガスシャワー体 |
JP2002083801A (ja) * | 2000-09-07 | 2002-03-22 | Oki Electric Ind Co Ltd | 半導体製造装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015518627A (ja) * | 2012-03-20 | 2015-07-02 | モーメンティブ・パフォーマンス・マテリアルズ・インク | 抵抗ヒーター |
Also Published As
Publication number | Publication date |
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US20040144312A1 (en) | 2004-07-29 |
JP4671262B2 (ja) | 2011-04-13 |
US7220320B2 (en) | 2007-05-22 |
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