JP2009091660A - 被加熱型基板支持構造体 - Google Patents
被加熱型基板支持構造体 Download PDFInfo
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- JP2009091660A JP2009091660A JP2008282281A JP2008282281A JP2009091660A JP 2009091660 A JP2009091660 A JP 2009091660A JP 2008282281 A JP2008282281 A JP 2008282281A JP 2008282281 A JP2008282281 A JP 2008282281A JP 2009091660 A JP2009091660 A JP 2009091660A
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- heating element
- support plate
- substrate
- plate
- substrate support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Chemical Vapour Deposition (AREA)
- Surface Heating Bodies (AREA)
- Resistance Heating (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
【解決手段】 本発明の基板支持プレート136は、加熱要素54,56を受け入れるための溝90,100を有している。加熱要素54,56は、外被200と、ヒータコイル202と、熱伝導充填材料204とから構成されている。この加熱要素54,56は溝90,100内に配置された後、圧縮されて熱伝導充填材料がヒータコイルの回りで圧密化されるようになっている。
【選択図】 図7
Description
Claims (14)
- 処理チャンバ内で基板を加熱し支持するための基板支持構造体であって、
支持プレートと、
前記支持プレート内に配置され、前記支持プレートの周縁の近傍の経路に沿って延びる外側のループを形成する第1の加熱要素と、
前記支持プレート内に配置され、前記外側のループよりも前記支持プレートの中央部分に接近した経路に沿って延びる内側のループを形成する第2の加熱要素と、
を備える基板支持構造体。 - 内側及び外側の加熱要素は、支持プレートの中央でリード線に接着されている請求項1に記載の基板支持構造体。
- 前記支持プレートの中心軸線で前記支持プレートに固定された中空ステムを更に備え、前記リード線は前記ステムを通って延びている請求項2に記載の基板支持構造体。
- 前記ステムを通って延び、当該ステムの支持プレート側の端部で接点を形成する一対の熱電対リード線を更に備える請求項3に記載の基板支持構造体。
- 前記内側のループと前記外側のループとの一部は並行して延びている請求項1に記載の基板支持構造体。
- 前記支持プレートは、前記基板を支持するための上面及び下面を有する上部プレートと、前記上部プレートの前記下面に接合される上面を有する下部プレートとを備え、前記第1の加熱要素及び第2の加熱要素は、前記上部プレートと前記下部プレートとの間に配置される請求項1に記載の基板支持構造体。
- 前記上部プレートの前記下面及び前記下部プレートの前記上面の少なくとも何れかは、複数の溝を含み、前記第1の加熱要素及び前記第2の加熱要素は前記複数の溝に嵌合する請求項6に記載の基板支持構造体。
- 前記支持プレートは矩形形状である請求項1に記載の基板支持構造体。
- 前記第2の加熱要素は、完全に前記プレート上の前記基板の下に配置され、前記基板の縁部分を越えて延びている請求項1に記載の基板支持構造体。
- 各加熱要素は、外被と、ヒータコイルと、前記外被及び前記ヒータコイルの間に配置された熱伝導充填材料とを有する請求項1に記載の基板支持構造体。
- 前記プレート及び前記外被はアルミニウムから構成される請求項10に記載の基板支持構造体。
- 前記熱伝導充填材料は酸化マグネシウムである請求項11に記載の基板支持構造体。
- 基板を処理するための処理チャンバと、
前記処理チャンバ内で基板を加熱し支持するための基板支持構造体と、を備え、
前記支持構造体は、
支持プレートと、
前記支持プレート内に配置され、前記支持プレートの周縁の近傍の経路に沿って延びる外側のループを形成する第1の加熱要素と、
前記支持プレート内に配置され、前記外側のループよりも前記支持プレートの中央部分に接近した経路に沿って延びる内側のループを形成する第2の加熱要素と、
を備える装置。 - 前記第1及び前記第2の加熱要素と電気的に接続され、前記第1及び前記第2の加熱要素を異なる温度にさせるようにされたコントローラを更に備える請求項13に記載の装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/635,270 US5844205A (en) | 1996-04-19 | 1996-04-19 | Heated substrate support structure |
US08/635270 | 1996-04-19 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10201897A Division JPH1032238A (ja) | 1996-04-19 | 1997-04-18 | 被加熱型基板支持構造体 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009091660A true JP2009091660A (ja) | 2009-04-30 |
JP5004927B2 JP5004927B2 (ja) | 2012-08-22 |
Family
ID=24547118
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10201897A Pending JPH1032238A (ja) | 1996-04-19 | 1997-04-18 | 被加熱型基板支持構造体 |
JP2008282281A Expired - Lifetime JP5004927B2 (ja) | 1996-04-19 | 2008-10-31 | 被加熱型基板支持構造体 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10201897A Pending JPH1032238A (ja) | 1996-04-19 | 1997-04-18 | 被加熱型基板支持構造体 |
Country Status (2)
Country | Link |
---|---|
US (1) | US5844205A (ja) |
JP (2) | JPH1032238A (ja) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012015036A (ja) * | 2010-07-05 | 2012-01-19 | Sukegawa Electric Co Ltd | プレートヒータ |
KR20140005080U (ko) * | 2013-03-14 | 2014-09-24 | 어플라이드 머티어리얼스, 인코포레이티드 | 히터를 구비한 기판 지지 페디스털 |
WO2018190193A1 (ja) * | 2017-04-12 | 2018-10-18 | 日本発條株式会社 | ヒータユニット |
WO2020075576A1 (ja) | 2018-10-11 | 2020-04-16 | 日本発條株式会社 | ステージ、成膜装置、および膜加工装置 |
WO2020080094A1 (ja) | 2018-10-17 | 2020-04-23 | 日本発條株式会社 | ヒータ、およびステージ |
WO2021024672A1 (ja) | 2019-08-02 | 2021-02-11 | 日本発條株式会社 | ヒータ、およびステージ |
CN112673709A (zh) * | 2018-10-11 | 2021-04-16 | 日本发条株式会社 | 载物台、成膜装置和膜处理装置 |
US11477858B2 (en) | 2017-04-12 | 2022-10-18 | Nhk Spring Co., Ltd. | Sheath heater |
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2008
- 2008-10-31 JP JP2008282281A patent/JP5004927B2/ja not_active Expired - Lifetime
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JPS5746488A (en) * | 1980-09-01 | 1982-03-16 | Kawai Electric Heater | Method of producing heater |
JPS58188082A (ja) * | 1982-04-28 | 1983-11-02 | 株式会社日立ホームテック | シ−ズヒ−タ |
JPH0590165A (ja) * | 1991-09-30 | 1993-04-09 | Toshiba Corp | 気相成長装置 |
JPH05304085A (ja) * | 1992-04-27 | 1993-11-16 | Fujitsu Ltd | 半導体ウェハベーキング装置 |
JPH06208882A (ja) * | 1992-05-25 | 1994-07-26 | Kawai Denki Seisakusho:Kk | シーズヒータ及びそれに取り付けられる絶縁用保護部材 |
JPH0669137A (ja) * | 1992-08-14 | 1994-03-11 | Ngk Insulators Ltd | セラミックスヒーター |
JPH06189852A (ja) * | 1992-12-24 | 1994-07-12 | Toshiba Home Technol Corp | 加熱装置の加熱体 |
JPH06260426A (ja) * | 1993-03-04 | 1994-09-16 | Toshiba Mach Co Ltd | ウエハの加熱方法及び装置 |
JPH06314694A (ja) * | 1993-04-28 | 1994-11-08 | Kyocera Corp | 半導体ウェハ加熱装置 |
JPH06326081A (ja) * | 1993-05-17 | 1994-11-25 | Fuji Electric Co Ltd | 乾式薄膜加工装置用加熱装置 |
JPH07153706A (ja) * | 1993-05-27 | 1995-06-16 | Applied Materials Inc | サセプタ装置 |
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JP2012015036A (ja) * | 2010-07-05 | 2012-01-19 | Sukegawa Electric Co Ltd | プレートヒータ |
KR200488076Y1 (ko) * | 2013-03-14 | 2018-12-12 | 어플라이드 머티어리얼스, 인코포레이티드 | 히터를 구비한 기판 지지 페디스털 |
KR20140005080U (ko) * | 2013-03-14 | 2014-09-24 | 어플라이드 머티어리얼스, 인코포레이티드 | 히터를 구비한 기판 지지 페디스털 |
US11477858B2 (en) | 2017-04-12 | 2022-10-18 | Nhk Spring Co., Ltd. | Sheath heater |
JP2018181584A (ja) * | 2017-04-12 | 2018-11-15 | 日本発條株式会社 | ヒータユニット |
CN110547042A (zh) * | 2017-04-12 | 2019-12-06 | 日本发条株式会社 | 加热器单元 |
US11490464B2 (en) | 2017-04-12 | 2022-11-01 | Nhk Spring Co., Ltd. | Heater unit |
WO2018190193A1 (ja) * | 2017-04-12 | 2018-10-18 | 日本発條株式会社 | ヒータユニット |
CN110547042B (zh) * | 2017-04-12 | 2022-06-07 | 日本发条株式会社 | 加热器单元 |
KR20210057145A (ko) | 2018-10-11 | 2021-05-20 | 닛폰 하츠죠 가부시키가이샤 | 스테이지, 성막 장치 및 막 가공 장치 |
CN112673709A (zh) * | 2018-10-11 | 2021-04-16 | 日本发条株式会社 | 载物台、成膜装置和膜处理装置 |
WO2020075576A1 (ja) | 2018-10-11 | 2020-04-16 | 日本発條株式会社 | ステージ、成膜装置、および膜加工装置 |
KR20230133408A (ko) | 2018-10-11 | 2023-09-19 | 닛폰 하츠죠 가부시키가이샤 | 스테이지, 성막 장치 및 막 가공 장치 |
KR20210045499A (ko) | 2018-10-17 | 2021-04-26 | 닛폰 하츠죠 가부시키가이샤 | 히터 및 스테이지 |
JP2020064760A (ja) * | 2018-10-17 | 2020-04-23 | 日本発條株式会社 | ヒータ、およびステージ |
WO2020080094A1 (ja) | 2018-10-17 | 2020-04-23 | 日本発條株式会社 | ヒータ、およびステージ |
JP7272777B2 (ja) | 2018-10-17 | 2023-05-12 | 日本発條株式会社 | ヒータ |
KR102542542B1 (ko) * | 2018-10-17 | 2023-06-13 | 닛폰 하츠죠 가부시키가이샤 | 히터 및 스테이지 |
WO2021024672A1 (ja) | 2019-08-02 | 2021-02-11 | 日本発條株式会社 | ヒータ、およびステージ |
KR20220035187A (ko) | 2019-08-02 | 2022-03-21 | 닛폰 하츠죠 가부시키가이샤 | 히터 및 스테이지 |
Also Published As
Publication number | Publication date |
---|---|
JPH1032238A (ja) | 1998-02-03 |
US5844205A (en) | 1998-12-01 |
JP5004927B2 (ja) | 2012-08-22 |
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