US20060075970A1 - Heated substrate support and method of fabricating same - Google Patents
Heated substrate support and method of fabricating same Download PDFInfo
- Publication number
- US20060075970A1 US20060075970A1 US10/965,601 US96560104A US2006075970A1 US 20060075970 A1 US20060075970 A1 US 20060075970A1 US 96560104 A US96560104 A US 96560104A US 2006075970 A1 US2006075970 A1 US 2006075970A1
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- Prior art keywords
- groove
- heater element
- substrate support
- cladding
- cap
- Prior art date
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- Abandoned
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 106
- 238000004519 manufacturing process Methods 0.000 title description 8
- 238000000034 method Methods 0.000 claims abstract description 44
- 238000005253 cladding Methods 0.000 claims description 48
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 23
- 229910052782 aluminium Inorganic materials 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 23
- 238000010438 heat treatment Methods 0.000 claims description 15
- 238000003780 insertion Methods 0.000 claims description 13
- 230000037431 insertion Effects 0.000 claims description 13
- 229910000838 Al alloy Inorganic materials 0.000 claims 4
- 238000013022 venting Methods 0.000 claims 2
- 238000000137 annealing Methods 0.000 claims 1
- 238000005242 forging Methods 0.000 claims 1
- 238000007788 roughening Methods 0.000 claims 1
- 238000003466 welding Methods 0.000 claims 1
- 238000009826 distribution Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000013529 heat transfer fluid Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49082—Resistor making
- Y10T29/49083—Heater type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
- Y10T29/49162—Manufacturing circuit on or in base by using wire as conductive path
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49194—Assembling elongated conductors, e.g., splicing, etc.
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49826—Assembling or joining
- Y10T29/49908—Joining by deforming
- Y10T29/49915—Overedge assembling of seated part
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49826—Assembling or joining
- Y10T29/49908—Joining by deforming
- Y10T29/49925—Inward deformation of aperture or hollow body wall
Definitions
- Embodiments of the invention generally provide a substrate support utilized in substrate processing and a method of fabricating the same.
- Liquid crystal displays or flat panels are commonly used for active matrix displays such as computer and television monitors.
- flat panels comprise two glass plates having a layer of liquid crystal material sandwiched therebetween. At least one of the glass plates includes at least one conductive film disposed thereon that is coupled to a power supply. Power supplied to the conductive film from the power supply changes the orientation of the crystal material, creating a pattern such as text or graphics that can be seen on the display.
- PECVD plasma enhanced chemical vapor deposition
- Plasma enhanced chemical vapor deposition is generally employed to deposit thin films on a substrate such as a silicon or quartz wafer, large area glass or polymer workpiece, and the like.
- Plasma enhanced chemical vapor deposition is generally accomplished by introducing a precursor gas into a vacuum chamber that contains the substrate.
- the precursor gas is typically directed through a distribution plate situated near the top of the chamber.
- the precursor gas in the chamber is energized (e.g., excited) into a plasma by applying RF power to the chamber from one or more RF sources coupled to the chamber.
- the excited gas reacts to form a layer of material on a surface of the substrate that is positioned on a temperature controlled substrate support.
- the substrate support may be heated in excess of 400 degrees Celsius. Volatile by-products produced during the reaction are pumped from the chamber through an exhaust system.
- the substrate support utilized to process flat panel displays are large, most often exceeding 550 mm ⁇ 650 mm.
- the substrate supports for high temperature use are typically forged or welded, encapsulating one or more heating elements and thermocouples in an aluminum body.
- the substrate supports typically operate at elevated temperatures (i.e., in excess of 350 degrees Celsius and approaching 500 degrees Celsius). Due to these high operating temperatures, the heating elements encapsulated in the substrate supports are susceptible to failure due to local hot spots that may form if the heat is not properly carried away and distributed throughout the substrate support.
- substrate supports configured in this manner have demonstrated good processing performance, manufacturing such supports has proven difficult and expensive. Moreover, as the cost of materials and manufacturing the substrate support is great, failure of the substrate support is highly undesirable. Additionally, if the substrate support fails during processing, a substrate supported thereon may be damaged. As this may occur after a substantial number of processing steps have been preformed thereon, the resulting loss of the in-process substrate may be very expensive. Furthermore, replacing a damaged support in the process chamber creates a costly loss of substrate throughput while the process chamber is idled during replacement or repair of the substrate support. Moreover, as the size of the next generation substrate supports are increased to accommodate substrates in excess of 2 square meters at operating temperatures approaching 500 degrees Celsius, the aforementioned problems become increasingly more important to resolve.
- the substrate support includes a body having a support surface and at least one groove.
- a heater element clad with a malleable heat sink is disposed in the groove. Substantially no air is trapped between the clad heater element and the groove.
- An insert is disposed in the groove above the heater element. The insert substantially covers and contacts the clad heater element and the sides of the groove.
- a cap is disposed in the groove above the insert. The cap covers and contacts the insert and has an upper surface disposed substantially flush with the support surface.
- a method of forming a substrate support includes the steps of providing a body having at least one groove formed in an upper support surface thereof and cladding a heater element with a material softer than the body, the material adapted to be a heat sink.
- the clad heater element is inserted into the groove.
- At least a bottom portion of the groove has a diameter which lies between the diameter of the clad heater element and the diameter of the unclad heater element.
- An insert is disposed in the groove over the clad heater element and a cap is inserted into the groove over the insert.
- An upper surface of the cap is disposed substantially flush with the upper support surface.
- FIG. 1 is a schematic sectional view of one embodiment of a processing chamber having a substrate support of the present invention
- FIG. 2 is a partial cross-sectional view of one embodiment of the substrate support assembly of FIG. 1 ;
- FIG. 3 is a flow chart depicting an inventive method for fabricating a substrate support
- FIGS. 4-7 are partial cross-sectional views of a substrate support assembly in varying stages of fabrication as described by the method of FIG. 3 .
- the invention generally provides a heated substrate support and methods of fabricating the same.
- the invention is illustratively described below in reference to a PECVD system, such as a PECVD system available from AKT, a division of Applied Materials, Inc., located in Santa Clara, Calif.
- a PECVD system such as a PECVD system available from AKT, a division of Applied Materials, Inc., located in Santa Clara, Calif.
- the invention has utility in other system configurations such as physical vapor deposition systems, ion implant systems, etch systems, other chemical vapor deposition systems and other systems in which use of a heated substrate support is desired.
- FIG. 1 is a cross sectional view of one embodiment of a plasma enhanced chemical vapor deposition system 100 .
- the system 100 generally includes a chamber 102 coupled to a gas source 104 .
- the chamber 102 has walls 106 , a bottom 108 , and a lid assembly 110 that define a process volume 112 .
- the process volume 112 is typically accessed through a port (not shown) in the walls 106 that facilitates movement of the substrate 140 into and out of the chamber 102 .
- the walls 106 and bottom 108 are typically fabricated from a unitary block of aluminum or other material compatible for processing.
- the lid assembly 110 contains a pumping plenum 114 that couples the process volume 112 to an exhaust port (that includes various pumping components, not shown).
- the lid assembly 110 is supported by the walls 106 and can be removed to service the chamber 102 .
- the lid assembly 110 is generally comprised of aluminum.
- a distribution plate 118 is coupled to an interior side 120 of the lid assembly 110 .
- the distribution plate 118 is typically fabricated from aluminum.
- the center section includes a perforated area through which process and other gases supplied from the gas source 104 are delivered to the process volume 112 .
- the perforated area of the distribution plate 118 is configured to provide uniform distribution of gases passing through the distribution plate 118 into the chamber 102 .
- a heated substrate support assembly 138 is centrally disposed within the chamber 102 .
- the support assembly 138 supports a substrate 140 during processing.
- the substrate support assembly 138 comprises an aluminum body 124 that encapsulates at least one embedded heating element 132 and a thermocouple 190 .
- the body 124 may optionally be coated or anodized. Alternatively, the body 124 may be made of ceramics or other materials compatible with the processing environment.
- the heating element 132 such as an electrode disposed in the support assembly 138 , is coupled to a power source 130 and controllably heats the support assembly 138 and substrate 140 positioned thereon to a predetermined temperature. Typically, the heating element 132 maintains the substrate 140 at a uniform temperature of from about 150 to at least about 460 degrees Celsius.
- the support assembly 138 has a lower side 126 and an upper surface 134 that supports the substrate.
- the upper support surface 134 is configured to support a substrate greater than or equal to about 550 by about 650 millimeters.
- the upper support surface 134 has a plan area greater than or equal to about 0.35 square meters for supporting substrates having a size greater than or equal to about 550 by 650 millimeters.
- the upper support surface 134 has a plan area of greater than or equal to about 2.7 square meters (for supporting substrates having a size greater than or equal to about 1500 by 1800 millimeters).
- the upper support surface 134 may generally have any shape or configuration.
- the upper support surface 134 has a substantially polygonal shape.
- the upper support surface is a quadrilateral.
- the lower side 126 has a stem cover 144 coupled thereto.
- the stem cover 144 generally is an aluminum ring coupled to the support assembly 138 that provides a mounting surface for the attachment of a stem 142 thereto.
- the stem 142 extends from the stem cover 144 and couples the support assembly 138 to a lift system (not shown) that moves the support assembly 138 between an elevated position (as shown) and a lowered position.
- a bellows 146 provides a vacuum seal between the chamber volume 112 and the atmosphere outside the chamber 102 while facilitating the movement of the support assembly 138 .
- the stem 142 additionally provides a conduit for electrical and thermocouple leads between the support assembly 138 and other components of the system 100 .
- the support assembly 138 has a plurality of holes 128 disposed therethrough that accept a plurality of lift pins 150 .
- the lift pins 150 are typically comprised of ceramic or anodized aluminum.
- the lift pins 150 have first ends 160 that are substantially flush with or slightly recessed from an upper surface 134 of the support assembly 138 when the lift pins 150 are in a normal position (i.e., retracted relative to the support assembly 138 ).
- the first ends 160 are generally flared to prevent the lift pins 150 from falling through the holes 128 .
- a second end 164 of the lift pins 150 extends beyond the lower side 126 of the support assembly 138 .
- the lift pins 150 may be displaced relative to the support assembly 138 by a lift plate 154 to project from the support surface 134 , thereby placing the substrate in a spaced-apart relation to the support assembly 138 .
- the support assembly 138 generally is grounded such that RF power supplied by a power source 122 to the distribution plate 118 (or other electrode positioned within or near the lid assembly of the chamber) may excite the gases disposed in the process volume 112 between the support assembly 138 and the distribution plate 118 .
- the RF power from the power source 122 is generally selected commensurate with the size of the substrate to drive the chemical vapor deposition process.
- the support assembly 138 additionally supports a circumscribing shadow frame 148 .
- the shadow frame 148 prevents deposition at the edge of the substrate 140 and support assembly 138 so that the substrate does not stick to the support assembly 138 .
- FIG. 2 depicts a partial cross-sectional view of the heater element 132 disposed in a groove 204 formed in the substrate support assembly 138 .
- the heater element 132 generally includes a plurality of conductive elements 224 encased in a dielectric 222 and covered with a protective sheath 220 .
- the heater element 132 further includes a cladding 210 which surrounds the sheath 220 .
- the cladding 210 forms an integral bond with the sheath 220 , having substantially no air pockets trapped between the cladding 210 and the sheath 220 .
- the heater element 132 may be clad by tightly wrapping a conformable sheet of the cladding 210 around the sheath 220 .
- the cladding 210 may be formed of a larger diameter tubing than the sheath 220 , which is then drawn through a die and swaged around the sheath 220 of the heater element 132 . It is contemplated that the heater element 132 may also comprise a conduit (not shown) for flowing a heat transfer fluid therethrough having the cladding 210 circumscribing the conduit.
- the cladding 210 has good thermal conductivity and is thick enough to be a heat sink at high heating rates to substantially prevent hot spots on the heater element 132 during operation.
- the cladding 210 generally may comprise any material with high thermal conductivity such that the cladding 210 is a sink for the heat produced by the conductive elements 224 during operation.
- the thickness of the cladding 210 required for a given application may be computed based upon the required heat load of the heater element 132 .
- the cladding 210 is also generally softer, or more malleable, than the body 124 of the substrate support assembly 138 to prevent deformation of the groove 204 upon insertion of the heater element 132 .
- the cladding 210 may be made from a high purity, super plastic aluminum material, such as aluminum 1100 up to about aluminum 3000-100 series.
- the cladding 210 may be fully annealed.
- the cladding 210 is formed from aluminum 1100-O.
- the cladding 210 is formed from aluminum 3004 .
- the heater element 132 is disposed in the groove 204 , or multiple grooves, formed in an upper surface 134 of the substrate support assembly 138 .
- the grooves 204 for receiving the heater element 132 may be formed in the lower side 126 of the substrate support.
- the groove 204 has walls 206 and a bottom 230 that are generally not held to tight tolerances during fabrication.
- the groove 204 may be formed in the body 124 of the substrate support assembly 138 in any number, size, or pattern as required to produce a desired heat distribution profile utilizing the heater element. 132 .
- the groove 204 is generally deep enough such that the heater element 132 is positioned in a desired location upon insertion into the groove 204 and the depth may vary depending upon the application. In one embodiment, the depth of the groove 204 is calculated such that the heater element 132 is substantially centered in the body 124 of the substrate support assembly 138 .
- the groove 204 is wider in diameter than the sheath 220 of the heater element 132 but narrower than the diameter of the cladding 210 prior to insertion, as depicted in FIG. 4 .
- the heater element 132 is press-fit into the groove 204 such that the malleable cladding 210 deforms upon insertion into the groove 204 and disrupt the native oxide layers, thereby providing integral contact between the heater element 132 and the groove 204 .
- the conductive elements 224 and the dielectric 222 will remain undamaged by the insertion of the heater element 132 into the groove 204 .
- the walls 206 of the groove 204 may be substantially straight and parallel.
- the walls 206 of the groove 204 may be formed at a slight angle or taper, such that the bottom 230 of the groove 204 is slightly narrower than the top portion of the groove 204 .
- the angle of taper between the walls 206 is generally less than 3 degrees, although larger taper angles are also contemplated.
- the tapered walls 206 advantageously allows for easier insertion of the heater element 132 , while still being narrow enough proximate the bottom 230 of the groove 204 to work the cladding 210 and the body 124 to form integral contact therebetween.
- the bottom 230 of the groove 204 may be radiused to conform with the shape of the heater element 132 .
- the bottom 230 of the groove 204 may be roughened, or textured, to facilitate forming a more tightly interlocking seal or bond between the cladding 210 of the heater element 132 and the body 124 of the substrate support assembly 138 .
- the textured surface further prevents movement between the heater element 132 and the body 124 of the substrate support assembly 138 .
- a channel 228 may also be provided in the bottom 230 of the groove 204 .
- the channel 228 allows air to escape during insertion of the heating element 132 and further interlocks the heater element 132 and the groove 204 .
- a portion 232 of the cladding 210 deforms to fill the channel 228 to be in complete, integral contact with the body 124 of the substrate support assembly 138 .
- Substantially no air pockets remain trapped between the cladding 210 and the groove 204 , further enhancing heat transfer from the heater element 138 to the body 124 of the substrate support assembly 138 .
- the groove 204 may be cleaned to remove any native oxide that may be present on the exposed surfaces of the groove 204 .
- the oxide layer may be abraded, etched with a caustic material, or removed by coating the exposed surfaces of the groove 204 with a sub-micron thick inhibitor layer prior to insertion of the heater element 132 .
- An insert 214 is disposed in the groove 204 above the heater element 132 and in close contact with the cladding 210 and the body 124 of the substrate support assembly 138 .
- the insert 214 is generally made of the same materials as the cladding 210 and further improves the heat transfer away from the heater element 132 .
- a bottom portion 234 of the insert 214 may be curved or otherwise shaped to conform more uniformly with the upper surface of the cladding 210 of the heating element 132 .
- a plurality of air escape holes 226 may be formed in the insert 214 to allow air to escape from between the bottom portion 234 of the insert 214 and the heating element 132 during fabrication to further ensure integral contact between the insert 214 and the cladding 210 of the heating element 132 .
- the insert 214 has a lower portion 602 in contact with the walls 206 of the groove 204 and an upper portion 604 which is slightly relieved and not in contact with the walls 206 .
- the upper portion 604 may be relieved by several thousands of an inch.
- the reduced surface contact between the insert 214 and the walls 206 of the groove 204 facilitates easier insertion of the insert 214 into the groove 204 .
- the relief is removed when the insert 214 is peened, rolled, pressed, or forged into the groove 204 .
- the softness of the material of the insert 214 allows this process to occur without substantial yielding of the material of the body 124 .
- the insert 214 may be machined back to provide a true surface for a cap 218 that covers the insert 214 .
- the cap 218 covers the insert 214 and is disposed substantially flush with the upper surface 134 of the substrate support assembly 138 .
- the cap 218 may comprise the same materials as the body 124 and is generally affixed to the walls 206 of the groove 204 to secure it in place. In one embodiment, the cap 218 may be welded to the body 124 . Alternatively, the cap 218 may be forged in place. It is contemplated that other methods of affixation of the cap 218 to the body 124 of the substrate support assembly 138 may be utilized equally as well as long as the union between the cap 218 and body 124 can withstand the processing conditions that the substrate support assembly 138 is subjected to.
- the cap 218 and/or the body 124 may be machined coplanar to provide a smooth upper surface 134 for supporting a substrate thereon.
- the substrate support assembly 138 may also be machined on the lower side 126 to balance the heat distribution from the embedded heater element 132 .
- FIG. 3 is a flow chart of one embodiment of a method 300 of fabricating a substrate support assembly as described above. The method depicted in FIG. 3 is further illustrated with reference to FIGS. 4-7 .
- the method 300 includes a step 302 , wherein a heater element 132 is encased with a cladding 210 .
- the heater element 132 is inserted into a groove 204 formed in the substrate support assembly 138 .
- the heater element 132 may be forced into the groove 204 by, for example, a mechanical or hydraulic press. It is contemplated that other means may be utilized to insert the clad heater element 132 into the groove 204 . As shown in FIG.
- the groove 204 is generally slightly narrower than the diameter of the heating element 132 due to the thickness of the cladding 210 .
- the malleable cladding 210 will deform upon the forced insertion into the groove 204 . This advantageously allows for substantially complete contact between the cladding 210 and the groove 204 , as shown in FIG. 5 .
- a portion 232 of the cladding 210 will be forced into the channel 228 formed in the groove 204 .
- an insert 214 is inserted into the groove 204 to cover the heating element 132 , as depicted in FIG. 6 .
- the insert 214 substantially fills the remainder of the groove 204 not occupied by the heating element 132 .
- the insert 214 may generally be press-fit into the groove 204 by the same methods used in step 304 to insert the heater element 132 .
- there may be a net positive force on the heater element 132 .
- an upper surface 610 of the insert 214 remains slightly higher than the upper surface 134 of the substrate support assembly 138 at the end of step 306 .
- a cap 218 (depicted in FIG. 7 ) is inserted into the groove 204 .
- the cap 218 may be inserted into the groove by the same means used above in steps 304 and 308 .
- the cap 218 compresses the insert 214 to apply a net positive force against the heating element 132 .
- the relieved portion 604 of the insert 214 expands to come into contact with the wall 206 of the groove 204 .
- the amount of relief provided to the upper portion 604 of the insert 214 and the extent to which the upper surface 610 of the insert 214 extends above the upper surface 134 of the substrate support assembly 138 may be calculated based upon the amount of compression and deformation which will occur upon inserting the cap 218 completely into the groove 204 and flush with the upper surface 134 of the substrate support assembly 138 .
- the expansion of the insert 214 should be calculated such that it will fill the groove 204 to insure integral contact between the insert 214 and the wall 206 of the groove 204 while not forcing the groove 204 to open up, widen, or otherwise deform.
- the step 308 of inserting the cap 218 into the groove 204 is completed by affixing the cap 218 to the body 124 of the substrate support assembly 138 .
- the upper surface 134 of the substrate support assembly and the cap 218 may be machined to improve the upper surface 134 for supporting a substrate thereon.
Abstract
A method and apparatus for forming a substrate support is provided herein. In one embodiment, the substrate support includes a body having a support surface and at least one groove. A heater element clad with a malleable heat sink is disposed in the groove. Substantially no air is trapped between the clad heater element and the groove. An insert is disposed in the groove above the heater. The insert substantially completely covers and contacts the clad heater element and the sides of the groove. A cap is disposed in the groove above the insert. The cap covers and contacts the insert and has an upper surface disposed substantially flush with the support surface.
Description
- 1. Field of the Invention
- Embodiments of the invention generally provide a substrate support utilized in substrate processing and a method of fabricating the same.
- 2. Description of the Related Art
- Liquid crystal displays or flat panels are commonly used for active matrix displays such as computer and television monitors. Generally, flat panels comprise two glass plates having a layer of liquid crystal material sandwiched therebetween. At least one of the glass plates includes at least one conductive film disposed thereon that is coupled to a power supply. Power supplied to the conductive film from the power supply changes the orientation of the crystal material, creating a pattern such as text or graphics that can be seen on the display. One fabrication process frequently used to produce flat panels is plasma enhanced chemical vapor deposition (PECVD).
- Plasma enhanced chemical vapor deposition is generally employed to deposit thin films on a substrate such as a silicon or quartz wafer, large area glass or polymer workpiece, and the like. Plasma enhanced chemical vapor deposition is generally accomplished by introducing a precursor gas into a vacuum chamber that contains the substrate. The precursor gas is typically directed through a distribution plate situated near the top of the chamber. The precursor gas in the chamber is energized (e.g., excited) into a plasma by applying RF power to the chamber from one or more RF sources coupled to the chamber. The excited gas reacts to form a layer of material on a surface of the substrate that is positioned on a temperature controlled substrate support. In applications where the substrate receives a layer of low temperature polysilicon, the substrate support may be heated in excess of 400 degrees Celsius. Volatile by-products produced during the reaction are pumped from the chamber through an exhaust system.
- Generally, the substrate support utilized to process flat panel displays are large, most often exceeding 550 mm×650 mm. The substrate supports for high temperature use are typically forged or welded, encapsulating one or more heating elements and thermocouples in an aluminum body. The substrate supports typically operate at elevated temperatures (i.e., in excess of 350 degrees Celsius and approaching 500 degrees Celsius). Due to these high operating temperatures, the heating elements encapsulated in the substrate supports are susceptible to failure due to local hot spots that may form if the heat is not properly carried away and distributed throughout the substrate support.
- Although substrate supports configured in this manner have demonstrated good processing performance, manufacturing such supports has proven difficult and expensive. Moreover, as the cost of materials and manufacturing the substrate support is great, failure of the substrate support is highly undesirable. Additionally, if the substrate support fails during processing, a substrate supported thereon may be damaged. As this may occur after a substantial number of processing steps have been preformed thereon, the resulting loss of the in-process substrate may be very expensive. Furthermore, replacing a damaged support in the process chamber creates a costly loss of substrate throughput while the process chamber is idled during replacement or repair of the substrate support. Moreover, as the size of the next generation substrate supports are increased to accommodate substrates in excess of 2 square meters at operating temperatures approaching 500 degrees Celsius, the aforementioned problems become increasingly more important to resolve.
- Therefore, there is a need for an improved substrate support.
- Embodiments of a heated substrate support are provided herein. In one embodiment, the substrate support includes a body having a support surface and at least one groove. A heater element clad with a malleable heat sink is disposed in the groove. Substantially no air is trapped between the clad heater element and the groove. An insert is disposed in the groove above the heater element. The insert substantially covers and contacts the clad heater element and the sides of the groove. A cap is disposed in the groove above the insert. The cap covers and contacts the insert and has an upper surface disposed substantially flush with the support surface.
- In another embodiment, a method of forming a substrate support is provided. The method of forming the substrate support includes the steps of providing a body having at least one groove formed in an upper support surface thereof and cladding a heater element with a material softer than the body, the material adapted to be a heat sink. The clad heater element is inserted into the groove. At least a bottom portion of the groove has a diameter which lies between the diameter of the clad heater element and the diameter of the unclad heater element. An insert is disposed in the groove over the clad heater element and a cap is inserted into the groove over the insert. An upper surface of the cap is disposed substantially flush with the upper support surface.
- So that the manner in which the above recited features of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
-
FIG. 1 is a schematic sectional view of one embodiment of a processing chamber having a substrate support of the present invention; -
FIG. 2 is a partial cross-sectional view of one embodiment of the substrate support assembly ofFIG. 1 ; -
FIG. 3 is a flow chart depicting an inventive method for fabricating a substrate support; and -
FIGS. 4-7 are partial cross-sectional views of a substrate support assembly in varying stages of fabrication as described by the method ofFIG. 3 . - The invention generally provides a heated substrate support and methods of fabricating the same. The invention is illustratively described below in reference to a PECVD system, such as a PECVD system available from AKT, a division of Applied Materials, Inc., located in Santa Clara, Calif. However, it should be understood that the invention has utility in other system configurations such as physical vapor deposition systems, ion implant systems, etch systems, other chemical vapor deposition systems and other systems in which use of a heated substrate support is desired.
-
FIG. 1 is a cross sectional view of one embodiment of a plasma enhanced chemicalvapor deposition system 100. Thesystem 100 generally includes achamber 102 coupled to agas source 104. Thechamber 102 haswalls 106, abottom 108, and alid assembly 110 that define a process volume 112. The process volume 112 is typically accessed through a port (not shown) in thewalls 106 that facilitates movement of thesubstrate 140 into and out of thechamber 102. Thewalls 106 andbottom 108 are typically fabricated from a unitary block of aluminum or other material compatible for processing. Thelid assembly 110 contains apumping plenum 114 that couples the process volume 112 to an exhaust port (that includes various pumping components, not shown). - The
lid assembly 110 is supported by thewalls 106 and can be removed to service thechamber 102. Thelid assembly 110 is generally comprised of aluminum. Adistribution plate 118 is coupled to aninterior side 120 of thelid assembly 110. Thedistribution plate 118 is typically fabricated from aluminum. The center section includes a perforated area through which process and other gases supplied from thegas source 104 are delivered to the process volume 112. The perforated area of thedistribution plate 118 is configured to provide uniform distribution of gases passing through thedistribution plate 118 into thechamber 102. - A heated
substrate support assembly 138 is centrally disposed within thechamber 102. Thesupport assembly 138 supports asubstrate 140 during processing. In one embodiment, thesubstrate support assembly 138 comprises analuminum body 124 that encapsulates at least one embeddedheating element 132 and athermocouple 190. Thebody 124 may optionally be coated or anodized. Alternatively, thebody 124 may be made of ceramics or other materials compatible with the processing environment. - The
heating element 132, such as an electrode disposed in thesupport assembly 138, is coupled to apower source 130 and controllably heats thesupport assembly 138 andsubstrate 140 positioned thereon to a predetermined temperature. Typically, theheating element 132 maintains thesubstrate 140 at a uniform temperature of from about 150 to at least about 460 degrees Celsius. - Generally, the
support assembly 138 has alower side 126 and anupper surface 134 that supports the substrate. In one embodiment, theupper support surface 134 is configured to support a substrate greater than or equal to about 550 by about 650 millimeters. In one embodiment, theupper support surface 134 has a plan area greater than or equal to about 0.35 square meters for supporting substrates having a size greater than or equal to about 550 by 650 millimeters. In one embodiment, theupper support surface 134 has a plan area of greater than or equal to about 2.7 square meters (for supporting substrates having a size greater than or equal to about 1500 by 1800 millimeters). Theupper support surface 134 may generally have any shape or configuration. In one embodiment, theupper support surface 134 has a substantially polygonal shape. In one embodiment, the upper support surface is a quadrilateral. - The
lower side 126 has astem cover 144 coupled thereto. Thestem cover 144 generally is an aluminum ring coupled to thesupport assembly 138 that provides a mounting surface for the attachment of astem 142 thereto. Generally, thestem 142 extends from thestem cover 144 and couples thesupport assembly 138 to a lift system (not shown) that moves thesupport assembly 138 between an elevated position (as shown) and a lowered position. A bellows 146 provides a vacuum seal between the chamber volume 112 and the atmosphere outside thechamber 102 while facilitating the movement of thesupport assembly 138. Thestem 142 additionally provides a conduit for electrical and thermocouple leads between thesupport assembly 138 and other components of thesystem 100. - The
support assembly 138 has a plurality ofholes 128 disposed therethrough that accept a plurality of lift pins 150. The lift pins 150 are typically comprised of ceramic or anodized aluminum. Generally, the lift pins 150 have first ends 160 that are substantially flush with or slightly recessed from anupper surface 134 of thesupport assembly 138 when the lift pins 150 are in a normal position (i.e., retracted relative to the support assembly 138). The first ends 160 are generally flared to prevent the lift pins 150 from falling through theholes 128. Asecond end 164 of the lift pins 150 extends beyond thelower side 126 of thesupport assembly 138. The lift pins 150 may be displaced relative to thesupport assembly 138 by alift plate 154 to project from thesupport surface 134, thereby placing the substrate in a spaced-apart relation to thesupport assembly 138. - The
support assembly 138 generally is grounded such that RF power supplied by apower source 122 to the distribution plate 118 (or other electrode positioned within or near the lid assembly of the chamber) may excite the gases disposed in the process volume 112 between thesupport assembly 138 and thedistribution plate 118. The RF power from thepower source 122 is generally selected commensurate with the size of the substrate to drive the chemical vapor deposition process. - The
support assembly 138 additionally supports a circumscribingshadow frame 148. Generally, theshadow frame 148 prevents deposition at the edge of thesubstrate 140 andsupport assembly 138 so that the substrate does not stick to thesupport assembly 138. -
FIG. 2 depicts a partial cross-sectional view of theheater element 132 disposed in agroove 204 formed in thesubstrate support assembly 138. Theheater element 132 generally includes a plurality ofconductive elements 224 encased in a dielectric 222 and covered with aprotective sheath 220. Theheater element 132 further includes acladding 210 which surrounds thesheath 220. Thecladding 210 forms an integral bond with thesheath 220, having substantially no air pockets trapped between thecladding 210 and thesheath 220. In one embodiment, theheater element 132 may be clad by tightly wrapping a conformable sheet of thecladding 210 around thesheath 220. Alternatively, thecladding 210 may be formed of a larger diameter tubing than thesheath 220, which is then drawn through a die and swaged around thesheath 220 of theheater element 132. It is contemplated that theheater element 132 may also comprise a conduit (not shown) for flowing a heat transfer fluid therethrough having thecladding 210 circumscribing the conduit. - Generally, the
cladding 210 has good thermal conductivity and is thick enough to be a heat sink at high heating rates to substantially prevent hot spots on theheater element 132 during operation. As such, thecladding 210 generally may comprise any material with high thermal conductivity such that thecladding 210 is a sink for the heat produced by theconductive elements 224 during operation. The thickness of thecladding 210 required for a given application may be computed based upon the required heat load of theheater element 132. Thecladding 210 is also generally softer, or more malleable, than thebody 124 of thesubstrate support assembly 138 to prevent deformation of thegroove 204 upon insertion of theheater element 132. In one embodiment, thecladding 210 may be made from a high purity, super plastic aluminum material, such as aluminum 1100 up to about aluminum 3000-100 series. Thecladding 210 may be fully annealed. In one embodiment, thecladding 210 is formed from aluminum 1100-O. In another embodiment, thecladding 210 is formed from aluminum 3004. - The
heater element 132 is disposed in thegroove 204, or multiple grooves, formed in anupper surface 134 of thesubstrate support assembly 138. Alternatively, thegrooves 204 for receiving theheater element 132 may be formed in thelower side 126 of the substrate support. Thegroove 204 haswalls 206 and a bottom 230 that are generally not held to tight tolerances during fabrication. Thegroove 204 may be formed in thebody 124 of thesubstrate support assembly 138 in any number, size, or pattern as required to produce a desired heat distribution profile utilizing the heater element. 132. Thegroove 204 is generally deep enough such that theheater element 132 is positioned in a desired location upon insertion into thegroove 204 and the depth may vary depending upon the application. In one embodiment, the depth of thegroove 204 is calculated such that theheater element 132 is substantially centered in thebody 124 of thesubstrate support assembly 138. - In one embodiment, the
groove 204 is wider in diameter than thesheath 220 of theheater element 132 but narrower than the diameter of thecladding 210 prior to insertion, as depicted inFIG. 4 . Theheater element 132 is press-fit into thegroove 204 such that themalleable cladding 210 deforms upon insertion into thegroove 204 and disrupt the native oxide layers, thereby providing integral contact between theheater element 132 and thegroove 204. As thegroove 204 is wider than the diameter of thesheath 220, theconductive elements 224 and the dielectric 222 will remain undamaged by the insertion of theheater element 132 into thegroove 204. - The
walls 206 of thegroove 204 may be substantially straight and parallel. Optionally, thewalls 206 of thegroove 204 may be formed at a slight angle or taper, such that thebottom 230 of thegroove 204 is slightly narrower than the top portion of thegroove 204. The angle of taper between thewalls 206 is generally less than 3 degrees, although larger taper angles are also contemplated. The taperedwalls 206 advantageously allows for easier insertion of theheater element 132, while still being narrow enough proximate the bottom 230 of thegroove 204 to work thecladding 210 and thebody 124 to form integral contact therebetween. - The
bottom 230 of thegroove 204 may be radiused to conform with the shape of theheater element 132. Alternatively, or in combination, thebottom 230 of thegroove 204 may be roughened, or textured, to facilitate forming a more tightly interlocking seal or bond between the cladding 210 of theheater element 132 and thebody 124 of thesubstrate support assembly 138. The textured surface further prevents movement between theheater element 132 and thebody 124 of thesubstrate support assembly 138. - A
channel 228 may also be provided in thebottom 230 of thegroove 204. Thechannel 228 allows air to escape during insertion of theheating element 132 and further interlocks theheater element 132 and thegroove 204. Upon insertion of theheater element 132 in thegroove 204, aportion 232 of thecladding 210 deforms to fill thechannel 228 to be in complete, integral contact with thebody 124 of thesubstrate support assembly 138. Substantially no air pockets remain trapped between thecladding 210 and thegroove 204, further enhancing heat transfer from theheater element 138 to thebody 124 of thesubstrate support assembly 138. Optionally, prior to inserting theheater element 132, thegroove 204 may be cleaned to remove any native oxide that may be present on the exposed surfaces of thegroove 204. For example, the oxide layer may be abraded, etched with a caustic material, or removed by coating the exposed surfaces of thegroove 204 with a sub-micron thick inhibitor layer prior to insertion of theheater element 132. - An
insert 214 is disposed in thegroove 204 above theheater element 132 and in close contact with thecladding 210 and thebody 124 of thesubstrate support assembly 138. Theinsert 214 is generally made of the same materials as thecladding 210 and further improves the heat transfer away from theheater element 132. Abottom portion 234 of theinsert 214 may be curved or otherwise shaped to conform more uniformly with the upper surface of thecladding 210 of theheating element 132. A plurality of air escape holes 226 may be formed in theinsert 214 to allow air to escape from between thebottom portion 234 of theinsert 214 and theheating element 132 during fabrication to further ensure integral contact between theinsert 214 and thecladding 210 of theheating element 132. In one embodiment, as depicted inFIG. 6 , theinsert 214 has alower portion 602 in contact with thewalls 206 of thegroove 204 and anupper portion 604 which is slightly relieved and not in contact with thewalls 206. For example, theupper portion 604 may be relieved by several thousands of an inch. The reduced surface contact between theinsert 214 and thewalls 206 of thegroove 204 facilitates easier insertion of theinsert 214 into thegroove 204. The relief is removed when theinsert 214 is peened, rolled, pressed, or forged into thegroove 204. The softness of the material of theinsert 214 allows this process to occur without substantial yielding of the material of thebody 124. After insertion into thegroove 204, theinsert 214 may be machined back to provide a true surface for acap 218 that covers theinsert 214. - The
cap 218 covers theinsert 214 and is disposed substantially flush with theupper surface 134 of thesubstrate support assembly 138. Thecap 218 may comprise the same materials as thebody 124 and is generally affixed to thewalls 206 of thegroove 204 to secure it in place. In one embodiment, thecap 218 may be welded to thebody 124. Alternatively, thecap 218 may be forged in place. It is contemplated that other methods of affixation of thecap 218 to thebody 124 of thesubstrate support assembly 138 may be utilized equally as well as long as the union between thecap 218 andbody 124 can withstand the processing conditions that thesubstrate support assembly 138 is subjected to. Optionally, thecap 218 and/or thebody 124 may be machined coplanar to provide a smoothupper surface 134 for supporting a substrate thereon. Thesubstrate support assembly 138 may also be machined on thelower side 126 to balance the heat distribution from the embeddedheater element 132. -
FIG. 3 is a flow chart of one embodiment of amethod 300 of fabricating a substrate support assembly as described above. The method depicted inFIG. 3 is further illustrated with reference toFIGS. 4-7 . Themethod 300 includes astep 302, wherein aheater element 132 is encased with acladding 210. Atstep 304, theheater element 132 is inserted into agroove 204 formed in thesubstrate support assembly 138. Theheater element 132 may be forced into thegroove 204 by, for example, a mechanical or hydraulic press. It is contemplated that other means may be utilized to insert the cladheater element 132 into thegroove 204. As shown inFIG. 4 , thegroove 204 is generally slightly narrower than the diameter of theheating element 132 due to the thickness of thecladding 210. Themalleable cladding 210 will deform upon the forced insertion into thegroove 204. This advantageously allows for substantially complete contact between thecladding 210 and thegroove 204, as shown inFIG. 5 . As also depicted inFIG. 5 , in one embodiment, aportion 232 of thecladding 210 will be forced into thechannel 228 formed in thegroove 204. - Next, at
step 306, aninsert 214 is inserted into thegroove 204 to cover theheating element 132, as depicted inFIG. 6 . Theinsert 214 substantially fills the remainder of thegroove 204 not occupied by theheating element 132. Theinsert 214 may generally be press-fit into thegroove 204 by the same methods used instep 304 to insert theheater element 132. Upon installation of theinsert 214, there may be a net positive force on theheater element 132. As shown in the embodiment depicted inFIG. 6 , anupper surface 610 of theinsert 214 remains slightly higher than theupper surface 134 of thesubstrate support assembly 138 at the end ofstep 306. - Finally, at
step 308, a cap 218 (depicted inFIG. 7 ) is inserted into thegroove 204. Thecap 218 may be inserted into the groove by the same means used above insteps cap 218 compresses theinsert 214 to apply a net positive force against theheating element 132. Upon compression of theinsert 214, therelieved portion 604 of theinsert 214 expands to come into contact with thewall 206 of thegroove 204. The amount of relief provided to theupper portion 604 of theinsert 214 and the extent to which theupper surface 610 of theinsert 214 extends above theupper surface 134 of thesubstrate support assembly 138 may be calculated based upon the amount of compression and deformation which will occur upon inserting thecap 218 completely into thegroove 204 and flush with theupper surface 134 of thesubstrate support assembly 138. The expansion of theinsert 214 should be calculated such that it will fill thegroove 204 to insure integral contact between theinsert 214 and thewall 206 of thegroove 204 while not forcing thegroove 204 to open up, widen, or otherwise deform. - The
step 308 of inserting thecap 218 into thegroove 204 is completed by affixing thecap 218 to thebody 124 of thesubstrate support assembly 138. Optionally, theupper surface 134 of the substrate support assembly and thecap 218 may be machined to improve theupper surface 134 for supporting a substrate thereon. - While the foregoing is directed to embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
Claims (46)
1. A substrate support comprising:
a body having a support surface;
at least one groove formed in the body;
a heater element disposed within the groove; and
a heat sink circumscribing the heater element and in contact with the heater element and the body.
2. The substrate support of claim 1 , wherein the heat sink comprises:
aluminum having a greater thermal conductivity than the body.
3. The substrate support of claim 1 , wherein the heat sink comprises:
an aluminum alloy selected from series 1100 to series 3000-100 aluminum.
4. The substrate support of claim 1 , wherein the heat sink comprises aluminum 3004.
5. The substrate support of claim 1 , wherein the heat sink is annealed.
6. The substrate support of claim 1 , wherein substantially no air is disposed between the heat sink and the heater element.
7. The substrate support of claim 1 , wherein opposing walls of the groove are flared outward.
8. The substrate support of claim 7 , wherein the walls of the groove are angled outward at an enclosed angle of less than about three degrees.
9. The substrate support of claim 1 , further comprising:
a channel formed proximate the bottom of the groove, wherein the channel is substantially filled with the heat sink.
10. The substrate support of claim 1 , further comprising:
an insert disposed in the groove above the heater element.
11. The substrate support of claim 10 further comprising:
one or more air relief holes formed through the insert.
12. The substrate support of claim 10 , wherein the insert comprises the same material as the heat sink.
13. The substrate support of claim 1 , further comprising:
a cap disposed in the groove.
14. The substrate support of claim 13 , wherein the cap has an outer surface disposed substantially co-planar with the support surface.
15. The substrate support of claim 13 , wherein the cap comprises the same material as the body.
16. The substrate support of claim 13 , wherein the cap is at least one of welded or forged in place.
17. The substrate support of claim 13 , wherein the cap forms a pressure seal between the heater element and an atmosphere outside of the substrate support.
18. The substrate support of claim 1 , further comprising:
a pressure seal disposed between the heater element and an atmosphere disposed outside of the substrate support.
19. The substrate support of claim 1 , wherein a bottom surface of the groove is roughened.
20. The substrate support of claim 1 , wherein the support surface has a support area that is greater than or equal to about 550 by about 650 millimeters.
21. The substrate support of claim 1 , wherein the support surface has a support area that is greater than or equal to about 1500 by about 1800 millimeters.
22. The substrate support of claim 1 , wherein the support surface has a support area that is substantially polygonal.
23. The substrate support of claim 1 , wherein the body comprises aluminum.
24. A substrate support, comprising:
an aluminum body having a support surface and at least one groove;
a heater element clad with a malleable heat sink and press fit into the groove;
an insert disposed in the groove, wherein the insert contacts the heater element and the sides of the groove; and
a cap disposed in the groove, the cap having an outer surface disposed substantially flush with the body.
25. The substrate support of claim 24 , wherein the heat sink comprises:
an aluminum alloy in the range of from about aluminum 1100 to about aluminum 3000-100 series.
26. The substrate support of claim 24 , wherein the heat sink comprises:
aluminum 3004.
27. A method of forming a substrate support, comprising:
providing a body having at least one groove formed in a surface thereof;
inserting a heater element into the groove, wherein the heater element is encased in an outer cladding having substantially no air pockets trapped between the cladding and the heater element, the cladding adapted to be a heat sink;
disposing an insert in the groove over the clad heater element; and
inserting a cap into the groove, wherein an outer surface of the cap is disposed substantially flush with the body.
28. The method of claim 27 , wherein the cladding comprises:
an aluminum alloy in the range of from about aluminum 1100 to about aluminum 3000-100 series.
29. A method of forming a substrate support, comprising:
providing a body having at least one groove formed in a support surface thereof;
inserting a heater element into the groove, the heater element clad with a material softer than the body and adapted to be a heat sink;
covering the clad heater element with an insert disposed in the groove; and
capping the groove with a cap having an upper surface disposed substantially flush with the upper support surface.
30. The method of claim 29 , further comprising:
venting gas from between the heater element and the body through a channel provided proximate a bottom of the groove.
31. The method of claim 29 , further comprising:
venting gas from between the heater element and the insert through a plurality of holes formed in and extending through the insert.
32. The method of claim 29 , wherein the step of providing a body further comprises:
providing a body having at least one groove, the groove having walls that taper outwardly from a bottom of the groove to the upper support surface.
33. The method of claim 32 , wherein the outwardly taping walls of the groove form an enclosed angle less than about three degrees.
34. The method of claim 29 , wherein the step of cladding the heater element further comprises:
wrapping a conformable sheet of cladding material around the heater element.
35. The method of claim 29 , wherein the step of cladding the heater element further comprises:
drawing a tubing of the cladding material having a larger diameter than the heating element through a die and swaging the tubing around the heater element.
36. The method of claim 29 , wherein the step of cladding the heater element further comprises:
cladding the heater element with a material comprising an aluminum alloy in the range of from about aluminum 1100 to about aluminum 3000-100 series.
37. The method of claim 29 , wherein the step of cladding the heater element further comprises:
removing substantially all air between the cladding and the heater element to form an integral bond between the heater element and the cladding.
38. The method of claim 29 , wherein the step of cladding the heater element further comprises:
annealing the cladding material.
39. The method of claim 29 , wherein the step of inserting the clad heater element into the groove further comprises:
removing a native oxide layer from surfaces of the groove prior to inserting the clad heater element.
40. The method of claim 29 , wherein the step of inserting the clad heater element into the groove further comprises:
working the cladding to provide integral contact between the cladding and the body.
41. The method of claim 29 , wherein the step of inserting the clad heater element into the groove further comprises:
press-fitting the clad heater element into the groove.
42. The method of claim 29 , wherein at least a bottom portion of the groove has a diameter which lies between the diameter of the clad heater element prior to insertion into the groove and the diameter of the unclad heater element.
43. The method of claim 29 , wherein the step of providing a body having at least one groove further comprises:
roughening a bottom surface of the groove.
44. The method of claim 29 , wherein the step of capping the groove further comprises:
welding the cap in place.
45. The method of claim 29 , wherein the step of capping the groove further comprises:
forging the cap in place.
46. The method of claim 29 , wherein the step of capping the groove further comprises:
forming a seal between the heater element and an atmosphere outside of the substrate support.
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/965,601 US20060075970A1 (en) | 2004-10-13 | 2004-10-13 | Heated substrate support and method of fabricating same |
US11/115,575 US7674338B2 (en) | 2004-10-13 | 2005-04-26 | Heated substrate support and method of fabricating same |
TW94128097A TWI289610B (en) | 2004-10-13 | 2005-08-17 | Heated substrate support and method of fabricating same |
CN2005100939345A CN1760722B (en) | 2004-10-13 | 2005-08-19 | Heated substrate support and method of fabricating same |
JP2005296615A JP4817791B2 (en) | 2004-10-13 | 2005-10-11 | Heating substrate support and manufacturing method thereof |
KR1020050096102A KR20060052233A (en) | 2004-10-13 | 2005-10-12 | Heated substrate support and method of fabricating same |
US12/178,228 US8065789B2 (en) | 2004-10-13 | 2008-07-23 | Method of fabricating a heated substrate support |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/965,601 US20060075970A1 (en) | 2004-10-13 | 2004-10-13 | Heated substrate support and method of fabricating same |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/115,575 Continuation-In-Part US7674338B2 (en) | 2004-10-13 | 2005-04-26 | Heated substrate support and method of fabricating same |
US12/178,228 Continuation US8065789B2 (en) | 2004-10-13 | 2008-07-23 | Method of fabricating a heated substrate support |
Publications (1)
Publication Number | Publication Date |
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US20060075970A1 true US20060075970A1 (en) | 2006-04-13 |
Family
ID=36144021
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/965,601 Abandoned US20060075970A1 (en) | 2004-10-13 | 2004-10-13 | Heated substrate support and method of fabricating same |
US11/115,575 Expired - Fee Related US7674338B2 (en) | 2004-10-13 | 2005-04-26 | Heated substrate support and method of fabricating same |
US12/178,228 Expired - Fee Related US8065789B2 (en) | 2004-10-13 | 2008-07-23 | Method of fabricating a heated substrate support |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/115,575 Expired - Fee Related US7674338B2 (en) | 2004-10-13 | 2005-04-26 | Heated substrate support and method of fabricating same |
US12/178,228 Expired - Fee Related US8065789B2 (en) | 2004-10-13 | 2008-07-23 | Method of fabricating a heated substrate support |
Country Status (2)
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US (3) | US20060075970A1 (en) |
CN (1) | CN1760722B (en) |
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US20090184093A1 (en) * | 2008-01-21 | 2009-07-23 | Abhi Desai | High temperature fine grain aluminum heater |
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US11330673B2 (en) | 2017-11-20 | 2022-05-10 | Applied Materials, Inc. | Heated substrate support |
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US8124915B2 (en) * | 2003-05-09 | 2012-02-28 | Pregis Intellipack Corporation | Sealing device |
US20090078202A1 (en) * | 2007-09-26 | 2009-03-26 | Neocera, Llc | Substrate heater for material deposition |
JP5791412B2 (en) * | 2010-07-26 | 2015-10-07 | 日本碍子株式会社 | Ceramic heater |
US11499229B2 (en) * | 2018-12-04 | 2022-11-15 | Applied Materials, Inc. | Substrate supports including metal-ceramic interfaces |
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EP1947689A2 (en) * | 2007-01-18 | 2008-07-23 | Applied Materials, Inc. | High temperature fine grain aluminium heater |
EP1947689A3 (en) * | 2007-01-18 | 2011-03-30 | Applied Materials, Inc. | High temperature fine grain aluminium heater |
TWI478214B (en) * | 2007-01-18 | 2015-03-21 | Applied Materials Inc | High temperature fine grain aluminum substrate support with heater and method for fabricating the same |
US20090184093A1 (en) * | 2008-01-21 | 2009-07-23 | Abhi Desai | High temperature fine grain aluminum heater |
US9917001B2 (en) | 2008-01-21 | 2018-03-13 | Applied Materials, Inc. | High temperature fine grain aluminum heater |
US9490150B2 (en) | 2012-07-03 | 2016-11-08 | Applied Materials, Inc. | Substrate support for substrate backside contamination control |
US11330673B2 (en) | 2017-11-20 | 2022-05-10 | Applied Materials, Inc. | Heated substrate support |
Also Published As
Publication number | Publication date |
---|---|
US7674338B2 (en) | 2010-03-09 |
CN1760722B (en) | 2010-11-24 |
CN1760722A (en) | 2006-04-19 |
US8065789B2 (en) | 2011-11-29 |
US20060075971A1 (en) | 2006-04-13 |
US20080271309A1 (en) | 2008-11-06 |
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