JP7214843B2 - セラミックヒータ - Google Patents
セラミックヒータ Download PDFInfo
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- JP7214843B2 JP7214843B2 JP2021512822A JP2021512822A JP7214843B2 JP 7214843 B2 JP7214843 B2 JP 7214843B2 JP 2021512822 A JP2021512822 A JP 2021512822A JP 2021512822 A JP2021512822 A JP 2021512822A JP 7214843 B2 JP7214843 B2 JP 7214843B2
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- electrode
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- ceramic plate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B1/00—Details of electric heating devices
- H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
- H05B1/0227—Applications
- H05B1/023—Industrial applications
- H05B1/0233—Industrial applications for semiconductors manufacturing
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
- H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/40—Heating elements having the shape of rods or tubes
- H05B3/42—Heating elements having the shape of rods or tubes non-flexible
- H05B3/48—Heating elements having the shape of rods or tubes non-flexible heating conductor embedded in insulating material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
- H05B3/265—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an inorganic material, e.g. ceramic
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Surface Heating Bodies (AREA)
- Resistance Heating (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
表面にウエハ載置面を備え、前記ウエハ載置面に近い方からプラズマ電極、ヒータ電極がこの順に離間した状態で埋設された円盤状のセラミックプレートと、
前記セラミックプレートの裏面から前記セラミックプレートを支持する円筒状シャフトと、
前記円筒状シャフトの内部に配置され、前記プラズマ電極に接続されたプラズマ電極接続部材と、
前記円筒状シャフトの内部に配置され、前記ヒータ電極に接続されたヒータ電極接続部材と、
前記セラミックプレートの裏面に配置されるか又は前記セラミックプレートのうち前記ヒータ電極よりも裏面側に埋設され、グランドに接続された平面シールド部と、
を備えたものである。
Claims (8)
- 表面にウエハ載置面を備え、前記ウエハ載置面に近い方からプラズマ電極、ヒータ電極がこの順に離間した状態で埋設された円盤状のセラミックプレートと、
前記セラミックプレートの裏面から前記セラミックプレートを支持する円筒状シャフトと、
前記円筒状シャフトの内部に配置され、前記プラズマ電極に接続されたプラズマ電極接続部材と、
前記円筒状シャフトの内部に配置され、前記ヒータ電極に接続されたヒータ電極接続部材と、
前記セラミックプレートの裏面に配置されるか又は前記セラミックプレートのうち前記ヒータ電極よりも裏面側に埋設され、グランドに接続された平面シールド部と、
前記平面シールド部の外縁から前記ウエハ載置面に向かって設けられた側面シールド部と、
を備え、
前記平面シールド部及び前記側面シールド部は、前記セラミックプレートに埋設されており、
前記側面シールド部の先端は、前記プラズマ電極の高さに達しておらず、前記プラズマ電極と前記ヒータ電極との間に位置する、
セラミックヒータ。 - 前記平面シールド部は、金属メッシュである、
請求項1に記載のセラミックヒータ。 - 前記平面シールド部は、前記円筒状シャフトの内表面又は外表面に設けられた円筒状の導電体を介して前記グランドに接続されている、
請求項1又は2に記載のセラミックヒータ。 - 前記平面シールド部は、前記ヒータ電極よりも外径が大きい、
請求項1~3のいずれか1項に記載のセラミックヒータ。 - 前記セラミックプレート及び前記円筒状シャフトは、AlNセラミック製であり、前記平面シールド部は、Al製又はAl合金製である、
請求項1~4のいずれか1項に記載のセラミックヒータ。 - 前記側面シールド部は、Al製又はAl合金製である、
請求項1~5のいずれか1項に記載のセラミックヒータ。 - 前記裏面から前記平面シールド部までの距離は、前記ウエハ載置面から前記プラズマ電極までの距離よりも大きい、
請求項1~6のいずれか1項に記載のセラミックヒータ。 - 前記裏面から前記平面シールド部までの距離は、前記ウエハ載置面から前記プラズマ電極までの距離よりも2.0mm以上長い、
請求項7に記載のセラミックヒータ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019219545 | 2019-12-04 | ||
JP2019219545 | 2019-12-04 | ||
PCT/JP2020/040362 WO2021111771A1 (ja) | 2019-12-04 | 2020-10-28 | セラミックヒータ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2021111771A1 JPWO2021111771A1 (ja) | 2021-12-02 |
JP7214843B2 true JP7214843B2 (ja) | 2023-01-30 |
Family
ID=76221192
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021512822A Active JP7214843B2 (ja) | 2019-12-04 | 2020-10-28 | セラミックヒータ |
Country Status (5)
Country | Link |
---|---|
US (1) | US20220112599A1 (ja) |
JP (1) | JP7214843B2 (ja) |
KR (1) | KR102638005B1 (ja) |
CN (1) | CN114051765A (ja) |
WO (1) | WO2021111771A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2022264922A1 (ja) * | 2021-06-15 | 2022-12-22 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011061040A (ja) | 2009-09-10 | 2011-03-24 | Tokyo Electron Ltd | 載置台構造及び処理装置 |
US20170306494A1 (en) | 2016-04-22 | 2017-10-26 | Applied Materials, Inc. | Substrate support pedestal having plasma confinement features |
JP2018123348A (ja) | 2017-01-30 | 2018-08-09 | 日本碍子株式会社 | ウエハ支持台 |
WO2019188496A1 (ja) | 2018-03-26 | 2019-10-03 | 日本碍子株式会社 | ウエハ支持台 |
WO2019225519A1 (ja) | 2018-05-23 | 2019-11-28 | 東京エレクトロン株式会社 | プラズマ処理装置 |
WO2020055565A1 (en) | 2018-09-14 | 2020-03-19 | Applied Materials, Inc. | Semiconductor substrate supports with embedded rf shield |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS602908B2 (ja) | 1981-01-20 | 1985-01-24 | インスチテユ−ト ネフテヒミチエスコゴ シンテザ イメニ エイ ヴイ トプチエヴア アカデミイ ナウク エスエスエスア−ル | シクロペンタジエンの水素化用膜状触媒及びその製造方法 |
JP5691701B2 (ja) * | 2011-03-18 | 2015-04-01 | 富士通株式会社 | 設計検証装置、設計支援方法及びプログラム |
KR102038647B1 (ko) * | 2013-06-21 | 2019-10-30 | 주식회사 원익아이피에스 | 기판 지지 장치 및 이를 구비하는 기판 처리 장치 |
CN104465453B (zh) * | 2013-09-20 | 2018-10-30 | 住友电气工业株式会社 | 等离子体cvd装置用的晶片加热器 |
US10047174B1 (en) * | 2017-06-28 | 2018-08-14 | Infineum International Limited | Polymerization initiating system and method to produce highly reactive olefin functional polymers |
-
2020
- 2020-10-28 WO PCT/JP2020/040362 patent/WO2021111771A1/ja active Application Filing
- 2020-10-28 JP JP2021512822A patent/JP7214843B2/ja active Active
- 2020-10-28 KR KR1020217041084A patent/KR102638005B1/ko active IP Right Grant
- 2020-10-28 CN CN202080048681.2A patent/CN114051765A/zh active Pending
-
2021
- 2021-12-17 US US17/644,827 patent/US20220112599A1/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011061040A (ja) | 2009-09-10 | 2011-03-24 | Tokyo Electron Ltd | 載置台構造及び処理装置 |
US20170306494A1 (en) | 2016-04-22 | 2017-10-26 | Applied Materials, Inc. | Substrate support pedestal having plasma confinement features |
JP2018123348A (ja) | 2017-01-30 | 2018-08-09 | 日本碍子株式会社 | ウエハ支持台 |
WO2019188496A1 (ja) | 2018-03-26 | 2019-10-03 | 日本碍子株式会社 | ウエハ支持台 |
WO2019225519A1 (ja) | 2018-05-23 | 2019-11-28 | 東京エレクトロン株式会社 | プラズマ処理装置 |
WO2020055565A1 (en) | 2018-09-14 | 2020-03-19 | Applied Materials, Inc. | Semiconductor substrate supports with embedded rf shield |
Also Published As
Publication number | Publication date |
---|---|
US20220112599A1 (en) | 2022-04-14 |
CN114051765A (zh) | 2022-02-15 |
JPWO2021111771A1 (ja) | 2021-12-02 |
KR102638005B1 (ko) | 2024-02-20 |
TW202122611A (zh) | 2021-06-16 |
WO2021111771A1 (ja) | 2021-06-10 |
KR20220010526A (ko) | 2022-01-25 |
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