CN114051765A - 陶瓷加热器 - Google Patents
陶瓷加热器 Download PDFInfo
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- 239000000919 ceramic Substances 0.000 title claims abstract description 107
- 229910052751 metal Inorganic materials 0.000 claims abstract description 54
- 239000002184 metal Substances 0.000 claims abstract description 54
- 239000004020 conductor Substances 0.000 claims description 12
- 229910000838 Al alloy Inorganic materials 0.000 claims description 7
- 238000005524 ceramic coating Methods 0.000 claims description 2
- 230000008878 coupling Effects 0.000 description 23
- 238000010168 coupling process Methods 0.000 description 23
- 238000005859 coupling reaction Methods 0.000 description 23
- 239000010408 film Substances 0.000 description 16
- 230000002159 abnormal effect Effects 0.000 description 12
- 230000020169 heat generation Effects 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Abstract
陶瓷加热器(20)具备陶瓷板(21)、圆筒状轴(26)以及导电膜(30)。陶瓷板(21)在表面具备晶片载置面(21a),从接近晶片载置面(21a)的一侧起依次以分离的状态埋设有等离子体电极(22)和加热器电极(24)。圆筒状轴(26)从陶瓷板(21)的背面(21b)支撑陶瓷板(21)。导电膜(相当于本发明的平面屏蔽部)(30)设置于陶瓷板(21)的背面(21b)中的除了圆筒状轴(26)以外的环状区域。导电膜(30)经由在圆筒状轴(26)的外壁沿上下方向设置的导电线(31)而与金属零件(28)(地线)连接。
Description
技术领域
本发明涉及一种陶瓷加热器。
背景技术
以往,在半导体制造工艺中,有时采用等离子体CVD工序。在等离子体CVD工序中,将晶片载置于陶瓷加热器的晶片载置面。在陶瓷加热器的陶瓷板中埋设有等离子体电极和加热器电极。另一方面,在晶片的上方空间配置有上部电极。并且,若在上部电极与等离子体电极之间施加高频电压,则在这些电极之间产生等离子体,利用该等离子体在晶片上蒸镀薄膜。在这样的陶瓷加热器中,若施加于等离子体电极的高频电压的漏电流传递到加热器电极,则存在无法控制对加热器电极的通电这样的问题。鉴于这一点,在专利文献1中提出了在等离子体电极与加热器电极之间设置高电阻的绝缘层(漏电流防止层)的方案。
现有技术文献
专利文献
专利文献1:日本特许第3602908号公报
发明内容
发明所要解决的课题
但是,在上述的陶瓷加热器中,有时绕到陶瓷板中的与晶片载置面相反侧的面(背面)侧的等离子体与加热器电极耦合。若发生这样的耦合,则高频电流流入加热器电极,因此不优选。
本发明是为了解决这样的课题而完成的,其主要目的在于防止绕到陶瓷板背面侧的等离子体与加热器电极耦合。
用于解决课题的手段
本发明的陶瓷加热器具备:
圆盘状的陶瓷板,其在表面具备晶片载置面,从接近前述晶片载置面的一侧起依次以分离的状态埋设有等离子体电极、加热器电极;
圆筒状轴,其从前述陶瓷板的背面支撑前述陶瓷板;
等离子体电极连接部件,其配置于前述圆筒状轴的内部,与前述等离子体电极连接;
加热器电极连接部件,其配置于前述圆筒状轴的内部,与前述加热器电极连接;以及
平面屏蔽部,其配置于前述陶瓷板的背面,或者埋设于前述陶瓷板中的比前述加热器电极更靠背面侧,与地线连接。
在该陶瓷加热器中,平面屏蔽部防止绕到陶瓷板的背面侧的等离子体与加热器电极的耦合。因此,能够防止由这样的耦合引起的不良情况的发生(例如加热器电极的异常发热或异常膨胀等)。
在本发明的陶瓷加热器中,前述平面屏蔽部可以设为导电性陶瓷涂膜、金属网或金属板。这样,能够比较简单地设置平面屏蔽部。
在本发明的陶瓷加热器中,前述平面屏蔽部可以经由设置于前述圆筒状轴的内表面或外表面的圆筒状的导电体而与前述地线连接。这样,不需要在圆筒状轴的内部穿过用于将平面屏蔽部与地线连接的部件,因此容易在圆筒状轴的内部空间配置其他部件(例如加热器电极连接部件、等离子体电极连接部件等)。进而,通过将设置于圆筒状轴的内表面或外表面的圆筒状的导电体与地线连接,也能够防止从等离子体产生的噪声流向加热器电极连接部件、等离子体电极连接部件等。需要说明的是,即使平面屏蔽部与设置于圆筒状轴的内表面或外表面的圆筒状的导电体没有连接,也能够防止噪声。
在本发明的陶瓷加热器中,前述平面屏蔽部可以与前述晶片载置面平行。需要说明的是,所谓“平行”,除了完全平行的情况以外,还包括实质上平行(例如落入公差的范围的情况等)(以下相同)。
在本发明的陶瓷加热器中,也可以是,前述平面屏蔽部的外径比前述加热器电极的外径大。这样,能够容易防止等离子体与加热器电极的外周部分的耦合。
在本发明的陶瓷加热器中,也可以是,前述陶瓷板以及前述圆筒状轴是AlN陶瓷制,前述平面屏蔽部是Al制或Al合金制。
本发明的陶瓷加热器也可以具备从前述平面屏蔽部的外缘朝向前述晶片载置面设置的侧面屏蔽部。这样,侧面屏蔽部防止绕到陶瓷板的侧面侧的等离子体与加热器电极的耦合。因此,能够防止由这样的耦合引起的不良情况的发生(例如加热器电极的异常发热或异常膨胀等)。在该情况下,前述侧面屏蔽部也可以是Al制或Al合金制。另外,在该情况下,前述平面屏蔽部以及前述侧面屏蔽部也可以埋设于前述陶瓷板,前述侧面屏蔽部的前端也可以位于前述晶片载置面与前述加热器电极之间。这样,能够可靠地防止绕到陶瓷板的侧面侧的等离子体与加热器电极的耦合。
在本发明的陶瓷加热器中,也可以是,前述平面屏蔽部可以埋设于前述陶瓷板,从前述背面到前述平面屏蔽部的距离比从前述晶片载置面到前述等离子体电极的距离大。从背面到平面屏蔽部的距离对晶片载置面的等离子体密度产生影响。因此,通过将从背面到等离子体电极的距离规定得大,能够减小平面屏蔽部对晶片载置面的等离子体造成的影响。另外,能够容易防止绕到背面侧的等离子体与加热器电极的耦合。在该情况下,从前述背面到前述平面屏蔽部的距离可以比从前述晶片载置面到前述等离子体电极的距离长2.0mm以上。例如,在从晶片载置面到等离子体电极的距离为1.0mm的情况下,只要将从背面到平面屏蔽部的距离规定为3.0mm以上即可。
在本发明的陶瓷加热器中,也可以是,前述平面屏蔽部可以埋设于前述陶瓷板,从前述背面到前述平面屏蔽部的距离比从前述平面屏蔽部到前述加热器电极的距离大。这样,位于加热器电极附近的平面屏蔽部能够更有效地防止从背面绕回的等离子体。
在本发明的陶瓷加热器中,也可以是,前述平面屏蔽部可以配置于前述陶瓷板的前述背面,前述侧面屏蔽部可以配置于前述陶瓷板的侧面,前述侧面屏蔽部的前端位于比设置有前述加热器电极的面更靠前述背面侧。这样一来,能够容易维持晶片载置面的均热性。在该情况下,前述平面屏蔽部可以隔着导热性比前述陶瓷板低的低热传导层而配置在前述陶瓷板的背面。这样,由于低热传导层防止陶瓷板的热直接传递到平面屏蔽部,因此能够防止平面屏蔽部的软化或熔融。
在本发明的陶瓷加热器中,优选不在前述RF电极与前述加热器电极之间设置平面屏蔽部。施加于等离子体电极的高频功率流向其他导电体而被无谓地消耗的情况下,对晶片载置面的等离子体密度产生影响。因此,优选以高频功率不从等离子体电极流向屏蔽部的方式,将屏蔽部设置于背面与加热器电极之间。
附图说明
[图1]等离子体处理装置10的纵剖视图。
[图2]等离子体处理装置10的变形例的纵剖视图。
[图3]等离子体处理装置10的变形例的纵剖视图。
[图4]等离子体处理装置10的变形例的纵剖视图。
[图5]等离子体处理装置10的变形例的纵剖视图。
[图6]等离子体处理装置10的变形例的纵剖视图。
具体实施方式
以下,参照附图对本发明的优选实施方式进行说明。图1是等离子体处理装置10的纵剖视图。在图1中,虚线箭头表示等离子体或等离子体电流。
如图1所示,等离子体处理装置10具备腔室12、上部电极14以及陶瓷加热器20。
腔室12是由铝合金等形成为箱状而成的容器。该腔室12具备未图示的压力调整阀、真空泵等,能够将腔室12的内部调整为期望的压力。
上部电极14安装在腔室12的顶棚。在上部电极14连接有用于产生等离子体的RF电源16。
陶瓷加热器20具备陶瓷板21、圆筒状轴26以及导电膜30。
陶瓷板21是在表面具备晶片载置面21a的圆盘状的AlN陶瓷制部件。在陶瓷板21中,从接近晶片载置面21a的一侧起依次以分离的状态埋设有等离子体电极22和加热器电极24。
圆筒状轴26从陶瓷板21的背面21b支撑陶瓷板21。圆筒状轴26载置于带孔的金属零件28。圆筒状轴26的内部与金属零件28的孔连通。金属零件28与地线连接。在圆筒状轴26的内部配置有与等离子体电极22连接的等离子体电极连接部件23和与加热器电极24连接的加热器电极连接部件25。等离子体电极连接部件23与地线连接。加热器电极连接部件25对加热器电极24的两端施加电压而使加热器电极24发热。
导电膜(相当于本发明的平面屏蔽部)30设置于陶瓷板21的背面21b中的除了圆筒状轴26以外的环状区域。导电膜30优选与晶片载置面21a平行。导电膜30也可以是导电性陶瓷的涂膜。作为导电性陶瓷,例如可举出SiC、TiC、TiN等。导电膜30经由在圆筒状轴26的外壁沿上下方向设置的导电线31而与金属零件28(地线)连接。导电线31也可以是导电性陶瓷的线状的涂膜。
在以上说明的本实施方式的陶瓷加热器20中,从陶瓷板21的背面侧作用的等离子体电流经由导电膜30而流向地线。即,导电膜30防止绕到陶瓷板21的背面侧的等离子体与加热器电极24的耦合。因此,能够防止由这样的耦合引起的不良情况的发生(例如加热器电极24的异常发热或异常膨胀等)。
另外,在导电线31是在圆筒状轴26的外壁上沿上下方向设置的导电性陶瓷的线状的涂膜的情况下,不需要在圆筒状轴26的内部布线导电线。另外,与在腔室12内设置导电线的情况相比,导电线31对腔室侧造成的影响也小。
需要说明的是,不言而喻,本发明不受上述实施方式的任何限定,只要属于本发明的技术范围,就能够以各种方式实施。
例如,也可以代替上述的实施方式的导电膜30以及导电线31而采用图2所示的金属罩40以及导电线41。需要说明的是,在图2中,对与上述的实施方式相同的构成要素标注相同的附图标记。金属罩40(相当于本发明的平面屏蔽部)是环状的金属板,设置于陶瓷板21的背面21b中的除了圆筒状轴26以外的环状区域。金属罩40隔着热导率比陶瓷板21低的低热传导层42而用螺钉43固定于陶瓷板21的背面21b。金属罩40优选与晶片载置面21a平行。作为低热传导层42的材质,例如在陶瓷板21为AlN陶瓷制的情况下,可举出氧化铝陶瓷。金属罩40经由设置于圆筒状轴26的外侧的导电线41而与金属零件28(地线)连接。在图2中,金属罩40防止绕到陶瓷板21的背面侧的等离子体与加热器电极24的耦合。因此,能够防止由这样的耦合引起的不良情况的发生(例如加热器电极24的异常发热或异常膨胀等)。另外,由于低热传导层42防止陶瓷板21的热直接传递到金属罩40,因此能够防止金属罩40的软化或熔融。特别是,若将金属罩40设为Al制或Al合金制,将低热传导层42设为氧化铝层,则能够有效地得到这样的效果。需要说明的是,也可以如图1的导电线31那样,在圆筒状轴26的外壁上沿着上下方向设置图2的导电线41。
或者,也可以代替上述的实施方式的导电膜30以及导电线31而采用图3所示的屏蔽电极50以及导电线51。需要说明的是,在图3中,对与上述的实施方式相同的构成要素标注相同的附图标记。屏蔽电极50(相当于本发明的平面屏蔽部)是埋设于陶瓷板21中的比加热器电极24更靠背面侧的金属制的面状构件。屏蔽电极50优选与晶片载置面21a平行。屏蔽电极50可以设为金属(例如Mo等)制的网状物。屏蔽电极50经由设置于圆筒状轴26内部的导电线51而与金属零件28(地线)连接。在图3中,屏蔽电极50防止绕到陶瓷板21的背面侧的等离子体与加热器电极24的耦合。因此,能够防止由这样的耦合引起的不良情况的发生(例如加热器电极的异常发热或异常膨胀等)。
也可以代替图3的屏蔽电极50而采用图4所示的屏蔽电极54。屏蔽电极54具备平面屏蔽部52和侧面屏蔽部53。平面屏蔽部52是埋设于陶瓷板21中的比加热器电极24更靠背面21b侧的、外径比加热器电极24大的金属制的面状部件。平面屏蔽部52与晶片载置面21a平行。从背面21b到平面屏蔽部52的距离D2优选比从晶片载置面21a到等离子体电极22的距离D1大,距离D2更优选比距离D1大2.0mm以上。另外,距离D2比从平面屏蔽部52到加热器电极24的距离D3大。平面屏蔽部52经由设置于圆筒状轴26内部的导电线51而与金属零件28(地线)连接。侧面屏蔽部53是从平面屏蔽部52的外缘朝向晶片载置面21a设置的金属制的圆筒部件。侧面屏蔽部53的前端位于晶片载置面21a与加热器电极24之间(具体而言,等离子体电极22与加热器电极24之间)。平面屏蔽部52以及侧面屏蔽部53也可以设为金属(例如Mo等)制的网状物。在图4中,平面屏蔽部52防止绕到陶瓷板21的背面侧的等离子体与加热器电极24的耦合。因此,能够防止由这样的耦合引起的不良情况的发生(例如加热器电极的异常发热或异常膨胀等)。另外,由于平面屏蔽部52的外径比加热器电极24的外径大,因此能够容易防止等离子体与加热器电极24的外周部分的耦合。进而,侧面屏蔽部53防止绕到陶瓷板21的侧面侧的等离子体与加热器电极24的耦合。因此,能够防止由这样的耦合引起的不良情况的发生。并且,侧面屏蔽部53的前端位于晶片载置面21a与加热器电极24之间。因此,能够可靠地防止绕到陶瓷板21的侧面侧的等离子体与加热器电极24的耦合。此外,从背面21b到平面屏蔽部52的距离D2比从晶片载置面21a到等离子体电极22的距离D1大。因此,能够减小平面屏蔽部52对晶片侧的等离子体造成的影响。而且,从背面21b到平面屏蔽部52的距离D2比从平面屏蔽部52到加热器电极24的距离D3大。因此,等离子体难以从背面21b流入平面屏蔽部52,能够减小平面屏蔽部52对晶片载置面侧的等离子体造成的影响。
也可以代替图4的导电线51而采用图5所示的导电体56。导电体56以覆盖圆筒状轴26的内表面整面的方式设置。如图5所示,平面屏蔽部52经由埋设于陶瓷板21的导电线61而与导电体56连接,导电体56与金属零件28(地线)连接。导电体56可以是导电性陶瓷的涂膜。作为导电性陶瓷,例如可举出SiC、TiC、TiN等。在图5中,由于不需要在圆筒状轴26的内部穿过用于将屏蔽电极54与金属零件28连接的构件,因此容易在圆筒状轴26的内部空间配置其他构件(例如加热器电极连接构件、等离子体电极连接构件等)。需要说明的是,在图5中,导电体56设置于圆筒状轴26的内表面,但也可以设置于圆筒状轴26的外表面。另外,导电体56设置于圆筒状轴26的内表面整面,但也可以不是整面而是直线状地设置在从圆筒状轴26的上端到下端(与金属零件28相接的位置)。
也可以代替图2的金属罩40以及导电线41而采用图6所示的金属结构体70。金属结构体70中,金属套筒71与金属罩74成为一体。金属套筒71覆盖圆筒状轴26的外表面的整面。金属套筒71经由设置于圆筒状轴26下端的凸缘27而被具有导电性的螺栓55固定于金属零件28。因此,金属结构体70经由螺栓55而与金属零件28(地线)连接。金属罩74具备作为环状金属板的平面屏蔽部72和从其外缘向上方设置的侧面屏蔽部73。平面屏蔽部72隔着低热传导层42而配置于背面21b,与晶片载置面21a平行,且外径比加热器电极24的外径大。侧面屏蔽部73的前端位于设置有加热器电极24的面与背面21b之间。为了将金属结构体70安装于圆筒状轴26,例如准备将金属结构体70纵向分割成2个而得到的半分割部件,将2个半分割部件以包围圆筒状轴26的方式配置后用紧固件75(螺栓、捆扎带等)进行固定即可。在图6中,平面屏蔽部72防止绕到陶瓷板21的背面侧的等离子体与加热器电极24的耦合。另外,由于平面屏蔽部72的外径比加热器电极24的外径大,因此能够容易防止等离子体与加热器电极24的外周部分的耦合。进而,侧面屏蔽部73防止绕到陶瓷板21的侧面侧的等离子体与加热器电极24的耦合。因此,能够防止由这样的耦合引起的不良情况的发生。并且,侧面屏蔽部73的前端位于设置有加热器电极24的面与背面21b之间,因此能够容易地维持晶片载置面21a的均热性。进而,由于低热传导层42防止陶瓷板21的热直接传递至金属罩74,因此能够防止金属罩74的软化或熔融。特别是,若将金属罩74设为Al制或Al合金制,将低热传导层42设为氧化铝层,则能够有效地得到这样的效果。而且,由于金属罩74由一体化的金属套筒71支撑,因此也能够省略图2的螺钉43。通过省略螺钉43,从而容易维持陶瓷板21的均热性。需要说明的是,也可以在图2的金属罩40设置侧面屏蔽部。另外,也可以代替图1的导电线31、图2的导电线41而采用覆盖圆筒状轴26的外表面整面的导电膜、金属套筒。
在上述的实施方式中,将上部电极14与RF电源16连接,将等离子体电极22与地线连接,但也可以将等离子体电极22与RF电源16连接,将上部电极14与地线连接。这一点在图2至图6中也是同样的。
本申请将2019年12月4日申请的日本专利申请第2019-219545号作为优先权主张的基础,通过引用将其内容全部包含在本说明书中。
产业上的利用可能性
本发明例如能够用于半导体制造装置用的构件。
符号说明
10等离子体处理装置、12腔室、14上部电极、16RF电源、20陶瓷加热器、21陶瓷板、21a晶片载置面、21b背面、22等离子体电极、23等离子体电极连接构件、24加热器电极、25加热器电极连接构件、26圆筒状轴、27凸缘、28金属零件、30导电膜、31导电线、40金属罩、41导电线、42低热传导层、43螺钉、50屏蔽电极、51导电线、52平面屏蔽部、53侧面屏蔽部、54屏蔽电极、55螺栓、70金属结构体、71金属套筒、72平面屏蔽部、73侧面屏蔽部、74金属罩、75连结部、D1~D3距离。
Claims (12)
1.一种陶瓷加热器,具备:
圆盘状的陶瓷板,其在表面具备晶片载置面,从接近所述晶片载置面的一侧起依次以分离的状态埋设有等离子体电极、加热器电极;
圆筒状轴,其从所述陶瓷板的背面支撑所述陶瓷板;
等离子体电极连接构件,其配置于所述圆筒状轴的内部,与所述等离子体电极连接;
加热器电极连接构件,其配置于所述圆筒状轴的内部,与所述加热器电极连接;以及
平面屏蔽部,其配置于所述陶瓷板的背面,或者埋设于所述陶瓷板中的比所述加热器电极更靠背面侧,且与地线连接。
2.根据权利要求1所述的陶瓷加热器,所述平面屏蔽部是导电性陶瓷涂膜、金属网或金属板。
3.根据权利要求1或2所述的陶瓷加热器,所述平面屏蔽部经由设置于所述圆筒状轴的内表面或外表面的圆筒状的导电体而与所述地线连接。
4.根据权利要求1~3中任一项所述的陶瓷加热器,所述平面屏蔽部的外径比所述加热器电极的外径大。
5.根据权利要求1~4中任一项所述的陶瓷加热器,所述陶瓷板以及所述圆筒状轴是AlN陶瓷制,所述平面屏蔽部是Al制或Al合金制。
6.根据权利要求1~5中任一项所述的陶瓷加热器,具备从所述平面屏蔽部的外缘朝向所述晶片载置面设置的侧面屏蔽部。
7.根据权利要求6所述的陶瓷加热器,所述侧面屏蔽部是Al制或Al合金制。
8.根据权利要求6或7所述的陶瓷加热器,所述平面屏蔽部及所述侧面屏蔽部埋设于所述陶瓷板,
所述侧面屏蔽部的前端位于所述晶片载置面与所述加热器电极之间。
9.根据权利要求1~8中任一项所述的陶瓷加热器,所述平面屏蔽部埋设于所述陶瓷板,
从所述背面到所述平面屏蔽部的距离比从所述晶片载置面到所述等离子体电极的距离大。
10.根据权利要求9所述的陶瓷加热器,从所述背面到所述平面屏蔽部的距离比从所述晶片载置面到所述等离子体电极的距离长2.0mm以上。
11.根据权利要求6或7所述的陶瓷加热器,所述平面屏蔽部配置于所述陶瓷板的所述背面,
所述侧面屏蔽部配置于所述陶瓷板的侧面,
所述侧面屏蔽部的前端位于比设置有所述加热器电极的面更靠所述背面侧。
12.权利要求1~7和11中任一项所述的陶瓷加热器,所述平面屏蔽部在所述陶瓷板的背面隔着导热性比所述陶瓷板低的低热传导层而配置。
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WO2021111771A1 (ja) | 2021-06-10 |
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