CN110709983B - 晶片支撑台 - Google Patents
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Abstract
本发明提供陶瓷加热器(10),其具备:在上表面具有载置晶片(W)的晶片载置面(22)的陶瓷基板(10);和埋设于陶瓷基板(10)的内部的加热电极(26)。陶瓷基板(20)具有芯部(20a)和设于芯部(20a)的表面的表层部(20b)。表层部(20b)的体积电阻率比芯部(20a)的体积电阻率高,芯部(20a)的导热率比表层部(20b)的导热率高。表层部(20b)设于芯部(20a)的侧面(20a2)和芯部(20a)的上表面(20a1)中的至少未由晶片(W)覆盖的区域。
Description
技术领域
本发明涉及一种晶片支撑台。
背景技术
作为半导体制造装置用部件,公知一种支持用于实施等离子体处理的晶片的晶片支撑台。作为这样的晶片支撑台,公知有一种具备在表面具有载置晶片的晶片载置部的陶瓷基板、和埋设于陶瓷基板的内部的加热电极。并且,作为陶瓷基板的材料,也已知优选导热性及耐腐蚀性优异的氮化铝烧结体。但是,由于氮化铝烧结体在高温区域内体积电阻率大幅度地降低,所以有时来自加热电极的漏电流变大而妨碍晶片处理。鉴于这一点,专利文献1中,使氮化铝烧结体的平均粒径为4μm以下,并使氧化钇的添加量为0.3~10质量%,由此在高温区域内体积电阻率也较高。
现有技术文献
专利文献
专利文献1:日本特开2003-313078号公报
发明内容
发明所要解决的课题
然而,由于专利文献1的陶瓷基板侧面没有高电阻层,所以与电极产生等离子体耦合。另外,由于能够提高在高温区域内的体积电阻率,但导热率变低,所以有时无法充分地获得晶片的均热性。
本发明是为了解决上述的课题而完成的,其主要目的在于,防止加热电极与等离子体的耦合并提高晶片的均热性。
用于解决课题的方案
本发明的晶片支撑台具备:
陶瓷基板,其在上表面具有载置晶片的晶片载置部;和
加热电极,其埋设于上述陶瓷基板的内部,
在上述晶片支撑台中,
上述陶瓷基板具有芯部和设于上述芯部的表面的表层部,
上述表层部的体积电阻率比上述芯部的体积电阻率高,
上述芯部的导热率比上述表层部的导热率高,
上述表层部设于上述芯部的侧面和上述芯部的上表面中的至少未由上述晶片覆盖的区域。
在该晶片支撑台中,陶瓷基板具有芯部和设于芯部的表面的表层部,表层部设于芯部的侧面和芯部的上表面中的至少未由晶片覆盖的区域。此处,表层部的体积电阻率比芯部的体积电阻率高。因此,在对晶片实施等离子体处理时,能够抑制成为妨碍晶片的等离子体处理的加热电极与等离子体的耦合。另一方面,芯部的导热率比表层部的导热率高。因此,在陶瓷基板整体中导热率变得较高,因而晶片的均热性变高。
此外,本说明书中,“上”“下”不是表示绝对的位置关系,而表示相对的位置关系。因此,根据陶瓷加热器的朝向,“上”“下”成为“左”“右”或者“前”“后”又或者“下”“上”。
在本发明的晶片支撑台中,上述表层部也可以还设于上述芯部的下表面。这样一来,能够更加抑制通过陶瓷基板的背面而与等离子体产生耦合。
在本发明的晶片支撑台中,上述表层部也可以还设于上述芯部的上表面中的由上述晶片覆盖的区域。也就是说,表层部也可以设于芯部的上表面的整个面。这样一来,能够抑制从加热电极向晶片的漏电流。
在本发明的晶片支撑台中,上述表层部也可以设置为包围上述芯部的整个表面。这样一来,能够进一步抑制产生加热电极与等离子体的耦合和产生来自加热电极的漏电流的情况。
在本发明的晶片支撑台中,也可以在上述陶瓷基板的内部,埋设有静电电极以及RF电极中的至少一方作为上述加热电极以外的电极。若在陶瓷基板的内部埋设静电电极、RF电极,则有时从这样的电极流出漏电流。但是,在本发明的晶片支撑台中,能够减少这样的漏电流。
在这样的晶片支撑台中,加热电极以外的电极也可以埋设在上述陶瓷基板的上表面与上述加热电极之间。在该情况下,加热电极以外的电极与陶瓷基板的上表面的间隔变小,容易产生漏电流,因而应用本发明的意义较高。
在本发明的晶片支撑台中,上述芯部以及上述表层部的主要成分优选为氮化铝。这是因为氮化铝的导热性及耐腐蚀性优异。
为了制造构成本发明的晶片支撑台的陶瓷基板,例如,(1)可以在成形芯部的原料粉末后进行烧成来制作芯部,接着向芯部的预定表面供给表层部的原料粉末来成形,并对其进行烧成,或者(2)也可以通过模铸成形来分别制作芯部的原料粉末的成形体和表层部的原料粉末的成形体,并对将上述两个成形体一体化后的部件进行烧成。
附图说明
图1是陶瓷加热器10的立体图。
图2是图1的A-A剖视图。
图3是陶瓷基板20的制造工序图。
图4是陶瓷基板20的另一例的剖视图。
图5是陶瓷基板20的另一例的剖视图。
图6是陶瓷基板20的另一例的剖视图。
图7是陶瓷基板20的另一例的剖视图。
具体实施方式
以下,参照附图对本发明的优选的实施方式进行说明。图1是陶瓷加热器10的立体图,图2是图1的A-A剖视图,图3是陶瓷基板20的制造工序图。
陶瓷加热器10是本发明的晶片载置台的一例,具备陶瓷基板20和筒状轴30。
陶瓷基板20在上表面21具有载置晶片W的晶片载置面22。陶瓷基板20的直径例如为300mm左右,厚度例如为20mm左右。晶片载置面22是设于陶瓷基板20的上表面21的中央的凹部。在上表面21设有包围晶片载置面22并且比晶片载置面22高一层的环状面23,在晶片载置面22与环状面23之间设有由倾斜面构成的倾斜部24。也就是说,上表面21具有晶片载置面22、环状面23以及倾斜部24。
如图2所示,陶瓷基板20具有与陶瓷基板20大致相同形状的芯部20a和设于陶瓷基板20的表面的表层部20b。芯部20a成为陶瓷基板20的中心。表层部20b设置为包围芯部20a的整个表面、即芯部20a的上表面20a1、侧面20a2以及下表面20a3。表层部20b的体积电阻率比芯部20a的体积电阻率高,芯部20a的导热率比表层部20b的导热率高。芯部20a及表层部20b的主要成分均为氮化铝。作为体积电阻率较低且导热率较高的芯部20a的材料,例如可以举出粒径较大的氮化铝烧结体。作为体积电阻率较高且导热率较低的表层部20b的材料,例如可以举出粒径较小的氮化铝烧结体等。表1示出芯部20a及表层部20b的材料的一例。表层部20b的厚度没有特别限定,例如可以为1~5mm。
表1
※1在室温下测定
※2在室温下测定
※3在烧成前的原料中添加的金属氧化物的金属成分
在陶瓷基板20的芯部20a埋设有加热电极26和RF电极28。加热电极26是以“一笔写成”的要领将以Mo作为主要成分的线圈布设于陶瓷基板20的整个面的部件。在加热电极26的两端分别连接有供电部件(未图示)。供电部件通过筒状轴30的中空内部而与外部电源(未图示)连接。RF电极28是直径比陶瓷基板20的直径稍小的圆盘状的薄层电极,由将以Mo作为主要成分的较细的金属线编织成网状并形成为片状的网状物形成。该RF电极28埋设于陶瓷基板20中的加热电极26与晶片载置面22之间。此外,使加热电极26、RF电极28的材质为Mo是因为:热膨胀系数与构成陶瓷基板20的氮化铝的热膨胀系数接近,在陶瓷基板20的制造时或反复进行热循环时等难以产生裂缝。在RF电极28的中央附近连接有供电部件(未图示)。RF电极28在产生等离子体时使用。
筒状轴30是以氮化铝作为主要成分的陶瓷制的圆筒部件,在上部开口的周围具有第一凸缘31,并在下部开口的周围具有第二凸缘32。第一凸缘31的端面固相接合或者扩散接合于陶瓷基板20的下表面25。
接下来,对陶瓷加热器10的使用例进行说明。在未图示的腔室内配置陶瓷加热器10,并在晶片载置面22载置晶片W。而且,通过对RF电极28施加交流高频电压,在由设置于腔室内的上方的未图示的对置水平电极和埋设于陶瓷基板20内的RF电极28构成的平行平板电极间产生等离子体,利用该等离子体对晶片W实施CVD成膜或者实施蚀刻。并且,基于未图示的热电偶的检测信号来求解晶片W的温度,并以使该温度成为预先决定的设定温度的方式控制对加热电极26施加的电压。
接下来,对构成陶瓷加热器10的陶瓷基板20的制造例进行说明。图3是陶瓷基板20的制造工序图。首先,通过模铸成形来制作用于制作陶瓷基板20的芯部20a的第一成形体50a(参照图3的(A))。第一成形体50a内置有加热电极26和RF电极28。第一成形体50a的制作中使用不含二氧化钛、氧化镁等添加物的氮化铝粉末。模铸成形是也被称作凝胶铸造成形的公知方法,其详细内容例如公开在日本专利第5458050号公报等中。该公报中记载有在陶瓷成形体的内部埋设有两层电极的陶瓷成形体的制作方法,因而按照该方法来制作第一成形体50a并脱脂。接着,通过模铸成形来制作用于制作陶瓷基板20的表层部20b的第二成形体50b的下部半分割体50b1和上部半分割体50b2并脱脂(参照图3的(B))。上述半分割体50b1、50b2的制作中使用在氮化铝粉末中(例如1质量%以下)添加有少量二氧化钛、氧化镁等的材料。接着,使上述半分割体50b1、50b2和第一成形体50a一体化而成为一体成形体50(参照图3的(C))。通过对该一体成形体50进行热压烧成,第一成形体50a成为芯部20a,第二成形体50b成为表层部20b,从而获得陶瓷基板20(参照图3的(D))。芯部20a是使不含添加物的氮化铝粉末的成形体烧结而成的,相对于此,表层部20b是使含有二氧化钛、氧化镁的氮化铝粉末烧结而成的,从而粒子难以生长。因此,表层部20b的氮化铝烧结体的粒径与芯部20a的氮化铝烧结体小。氮化铝烧结体的粒径越小,体积电阻率越高,但导热率越低。因此,在体积电阻率方面,表层部20b比芯部20a高,并在导热率方面,芯部20a比表层部20b高。
在以上详细说明了的陶瓷加热器10中,体积电阻率较高的表层部20b设于体积电阻率较低的芯部20a的上表面20a1、侧面20a2以及下表面20a3。也就是说,表层部20b设置为包围芯部20a的整个表面。因此,在对晶片W实施等离子体处理时,能够抑制产生成为妨碍晶片W的等离子体处理的加热电极26与等离子体的耦合。另一方面,位于陶瓷基板20的中心的芯部20a的导热率比陶瓷基板20的表层部20b的导热率高。因此,在陶瓷基板20的整体中导热率变得较高,因而晶片W的均热性变高。
尤其,表层部20b设于陶瓷基板20的上表面21的整个面。即,表层部20b不仅设于陶瓷基板20的上表面21的未由晶片W覆盖的区域(环状面23及倾斜部24),还设于由晶片W覆盖的区域(晶片载置面22)。因此,能够抑制从加热电极26、RF电极28向晶片W的漏电流。并且,表层部20b也设于陶瓷基板20的下表面25的整个面。因此,能够抑制通过陶瓷基板20的背面而产生与等离子体的耦合。
并且,RF电极28埋设于陶瓷基板20的上表面21与加热电极26之间。因此,RF电极28与陶瓷基板20的晶片载置面22的距离(也就是说电介质层的厚度)变小。由于对RF电极28施加高电压,所以电介质层的厚度越小,越容易产生漏电流。根据这样的情况,应用本发明的意义较高。
另外,由于陶瓷基板20的芯部20a及表层部20b的主要成分是氮化铝,所以导热性及耐腐蚀性优异。
此外,本发明不限定于上述的任一实施方式,当然在属于本发明的技术范围内能够以各种方式来实施。
例如,在上述的实施方式中,在陶瓷基板20的芯部20a的上表面20a1、侧面20a2以及下表面20a3设有体积电阻率较高且导热率较低的表层部20b,但也可以如图4所示,在芯部20a的下表面20a3不设置表层部20b。这是因为经由下表面20a3而产生加热电极26与等离子体的耦合的可能性较低。或者,也可以如图5所示,在上表面20a1的未由晶片W覆盖的区域(环状面23及倾斜部24)设置表层部20b,而在由晶片W覆盖的区域(晶片载置面22)不设置表层部20b。这是因为晶片载置面22由晶片W覆盖,因而在对晶片W实施等离子体处理时,不会暴露在等离子体中。此外,图5的晶片载置面22比倾斜部24的内周缘稍高。图4及图5中,对与上述的实施方式相同的构成要素标注有相同的符号。图5中,也可以如图4所示地在芯部20a的下表面20a3不设置表层部20b。
在上述的实施方式中,将设于陶瓷基板20的上表面21的中央的凹部作为晶片载置面22,但也可以如图6所示,在上表面21不设置凹部,使晶片载置面22与环状面23为同一平面。或者,也可以如图7所示,在上表面21不设置凹部,使晶片载置面22作为上表面21的整个面。图6及图7中,对与上述的实施方式相同的构成要素标注有相同的符号。
在上述的实施方式中,在陶瓷基板20的芯部20a埋设有RF电极28,但也可以省略RF电极28,也可以代替RF电极28或者在RF电极28的基础上将静电电极埋设于芯部20a内。在埋设有静电电极的情况下,在将晶片W载置于晶片载置面22后,对静电电极施加电压,由此能够将晶片W静电吸附至晶片载置面22。静电电极也可以埋设于晶片载置面22与加热电极26之间。
在上述的实施方式中,示出笔直形状的筒状轴30的例子,但筒状轴30的形状并非特别限定于笔直形状。例如,也可以将从筒状轴的下端起至预定高度为止的部分作为笔直部,并将从预定高度至上端为止的部分作为直径比笔直部的直径大的扩管部。扩管部的一部分或者全部也可以随着接近上端而直径变大。
在上述的实施方式中,以“一笔写成”的要领将加热电极26布设于陶瓷基板20的整个面,但也可以将陶瓷基板20分为多个区域,在每个区域内布设加热电极。
在上述的实施方式中,陶瓷基板20的芯部20a和表层部20b为由以氮化铝作为主要成分的陶瓷制成,但主要成分也可以是氮化铝以外的成分、例如氧化铝、氮化硅、碳化硅、堇青石等。
在上述的实施方式中,使用线圈作为加热电极26,但也可以使用带状物(扁平部件)来代替线圈。在使用带状物作为加热电极26的情况下,能够通过印刷金属膏(例如Mo膏)来制作加热电极26。
在上述的实施方式中,加热电极26及RF电极28由以Mo作为主要成分的材料来制作,但没有特别限定,也可以由以其它高熔点金属(例如W等)作为主要成分的材料来制作。
本申请主张基于在2018年3月26日申请的美国临时申请第62/647,970号的优先权,并通过引用将其全部内容包括在本说明书中。
工业上的可利用性
本发明例如能够作为半导体制造装置的构成部件来利用。
符号的说明
10—陶瓷加热器,20—陶瓷基板,20a—芯部,20a1—上表面,20a—两侧面,20a3—下表面,20b—表层部,21—上表面,22—晶片载置面,23—环状面,24—倾斜部,25—下表面,26—加热电极,28—RF电极,30—筒状轴,31、32—凸缘,50—一体成形体,50a—第一成形体,50b—第二成形体,50b1—下部半分割体,50b2—上部半分割体。
Claims (6)
1.一种晶片支撑台,具备:
陶瓷基板,其在上表面具有载置晶片的晶片载置部;和
加热电极,其埋设于上述陶瓷基板的内部,
上述晶片支撑台的特征在于,
上述陶瓷基板具有芯部和设于上述芯部的表面的表层部,
上述表层部的体积电阻率比上述芯部的体积电阻率高,
上述芯部的导热率比上述表层部的导热率高,
上述表层部设于上述芯部的侧面和上述芯部的上表面中的至少未由上述晶片覆盖的区域,
上述芯部以及上述表层部均为氮化铝烧结体,上述芯部为粒径比上述表层部大的氮化铝烧结体,
上述表层部含有小于1质量%的Ti。
2.根据权利要求1所述的晶片支撑台,其特征在于,
上述表层部还设于上述芯部的下表面。
3.根据权利要求1或2所述的晶片支撑台,其特征在于,
上述表层部还设于上述芯部的上表面中的由上述晶片覆盖的区域。
4.根据权利要求1或2所述的晶片支撑台,其特征在于,
上述表层部设置为包围上述芯部的整个表面。
5.根据权利要求1或2所述的晶片支撑台,其特征在于,
在上述陶瓷基板的内部埋设有静电电极以及RF电极中的至少一方作为上述加热电极以外的电极。
6.根据权利要求5所述的晶片支撑台,其特征在于,
上述加热电极以外的电极埋设于上述陶瓷基板的上表面与上述加热电极之间。
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