TW202111820A - 半導體製造裝置用構件 - Google Patents

半導體製造裝置用構件 Download PDF

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TW202111820A
TW202111820A TW109125764A TW109125764A TW202111820A TW 202111820 A TW202111820 A TW 202111820A TW 109125764 A TW109125764 A TW 109125764A TW 109125764 A TW109125764 A TW 109125764A TW 202111820 A TW202111820 A TW 202111820A
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electrode
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ceramic
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田村隆二
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日商日本碍子股份有限公司
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Abstract

半導體製造裝置用構件，在表面是晶圓載置面之陶瓷板的背面設有中空的陶瓷軸的構造。這種半導體製造裝置用構件，具備：RF電極，埋設於陶瓷板；RF連接器，配置於陶瓷軸的中空內部的外側；和RF連接構件，設置於RF連接器與RF電極之間。RF連接構件具有以複數個RF桿構成的分歧部，分歧部延伸至陶瓷軸的外側。

Description

半導體製造裝置用構件
本發明是有關於半導體製造裝置用構件。
在蝕刻裝置、CVD裝置等的半導體製造裝置，有時會使用在表面是晶圓載置面之圓盤狀的陶瓷板的背面連接圓筒狀的陶瓷軸的構造的半導體製造裝置用構件。作為這樣的半導體製造裝置用構件，已知在陶瓷板埋設有高頻電極（RF電極），且利用此RF電極使電漿產生。例如，在專利文獻1的半導體製造裝置用構件中，在RF電極連接複數個RF桿，複數個RF桿從配置於陶瓷軸的中空內部的1個RF連接器分歧。在專利文獻1中，由於並非具備1根RF桿，而是具備複數個RF桿，能夠使每根RF桿流通的電流較小，每根RF桿的發熱量也相應地減少。因此，變得難以在陶瓷板產生熱點（hot spot）。 [先前技術文獻] [專利文獻]
[專利文獻1]日本特開2016-184642號公報
[發明所欲解決的問題]
但是，如果像專利文獻1一樣，在陶瓷軸的中空內部配置有RF連接器，有時陶瓷板的中空內部的溫度會因為RF連接器發熱而變高。在那種情況下，即使RF桿的發熱量較小，RF桿的溫度也會變得容易上升，會有熱點容易產生於陶瓷板之虞。
本發明是為了解決這樣的問題而做出，以在具備複數個RF桿的半導體製造裝置用構件中確實防止熱點產生於陶瓷板為主要目的。 [用以解決問題的手段]
本發明的半導體製造裝置用構件， 是在表面為晶圓載置面之陶瓷板的背面設有中空的陶瓷軸的構造的半導體裝置用構件，具備： RF電極，埋設於前述陶瓷板； RF連接器，配置於前述陶瓷軸的中空內部的外側；和 RF連接構件，設置於前述RF連接器與前述RF電極之間， 且前述RF連接構件具有以複數個RF桿構成的分歧部，前述分歧部延伸至前述陶瓷軸的外側。
在這種半導體製造裝置用構件中，RF連接構件具有以複數個RF桿構成的分歧部。藉此，由於RF連接構件的電流通路的表面積增加，能夠利用集膚效應抑制電阻的增加。此外，由於流通於每根RF桿的電流變小，每根RF桿的發熱量會減少。另一方面，RF連接器是配置於陶瓷軸的中空內部的外側。藉此，即使RF連接器發熱，陶瓷軸的中空內部的溫度也不會因此變高。因此，不會導致配置於陶瓷軸的中空內部之RF桿的溫度容易上升的狀況。因此，利用本發明的半導體製造裝置用構件，能夠確實防止熱點產生於陶瓷板。
在本發明的半導體製造裝置用構件，前述複數個RF桿也可以在前述陶瓷板的背面的前方的第1集約部收成1個並連接至前述RF電極。如此一來，在將RF連接構件連接至RF電極時，能夠使設置於陶瓷板的孔變少。
在本發明的半導體製造裝置用構件，前述複數個RF桿也可以個別連接至前述RF電極。如此一來，即使複數個RF桿的其中1個由於某些理由而從電極脫落，也能夠從其他的RF桿將電力供給至RF電極。
在本發明的半導體製造裝置用構件，RF電極也可以在陶瓷板的內部設置為遍及高度相異的複數個面。如此一來，能夠在RF電極的每個高度相異的面改變電漿的密度。在這種情況下，複數個RF桿也可以個別連接至RF電極的各個面。如此一來，能夠確保RF桿之間的距離。例如，藉由使發熱的RF桿之間的距離較大，能夠防止RF桿彼此互相加熱。此外，因為RF桿連接至靠近陶瓷板的背面的RF電極與離陶瓷板的背面較遠的RF電極兩者，連接至靠近陶瓷板的背面的RF電極的RF桿的孔的深度變淺，陶瓷板的加工負荷變小且能夠抑制破損風險。對此，在複數根的RF桿連接至離陶瓷板的背面較遠的RF電極的情況下，複數根的RF桿的孔的深度變深，陶瓷板的加工負荷變大且破損風險提高。
在本發明的半導體製造裝置用構件，前述複數個RF桿也可以在前述RF連接器的前方的第2集約部收成1個且連接至前述RF連接器。如此一來，在將RF連接構件連接至RF連接器時，能夠減少RF連接構件與RF連接器的連接處。
在本發明的半導體製造裝置用構件，在對縱向垂直的方向切斷前述RF桿時的剖面，也可以在外周部是具有至少1個凹部的形狀。如此一來，由於RF桿的表面積與沒有凹部的情況相比會變得更大，更能夠抑制因為集膚效應所造成之電阻的增加，更減少每根RF桿的發熱量。
在本發明的半導體製造裝置用構件，也可以具備：電阻發熱體，埋設於前述陶瓷板；和一對加熱桿，連接至前述電阻發熱體且透過前述陶瓷軸的中空內部設置至前述陶瓷板的外側為止，前述RF連接構件的尾端也可以是在比前述加熱桿的尾端靠近前述陶瓷軸的位置。如此一來，由於RF連接構件的發熱的部分變短，結果發熱量變少。並且，由於對RF連接構件的尾端進行的操作與對加熱桿的尾端進行的操作難以干涉，會變得容易流暢地進行各自的作業。此外，由於RF連接構件的長度能夠變得比較短，能夠將RF連接構件的電阻抑制得較低，能夠將RF連接構件的發熱量抑制得較低。
在本發明的半導體製造裝置用構件，也可以具備：電阻發熱體，埋設於前述陶瓷板；和一對加熱桿，連接至前述電阻發熱體且透過前述陶瓷軸的中空內部設置至前述陶瓷板的外側為止，RF桿優選為比加熱桿更粗。也就是，RF桿的直徑優選為比加熱桿的直徑更大。如此一來，由於RF桿的表面積變大，流通RF桿的RF電流的電阻變低。因此，每根RF桿的發熱量更加減少。另外，在半導體製造裝置用構件具備第1集約部的情況下，優選為第1集約部的直徑比加熱桿的直徑更大。在半導體製造裝置用構件具備第2集約部的情況下，優選為第2集約部的直徑比加熱桿的直徑更大。
[用以實施發明之形態]
接著，有關本發明的優選實施形態，以下參照圖式以進行說明。第1圖是陶瓷加熱器10的縱剖面圖。
另外，在本說明書，「上」「下」並非表示絕對的位置關係，而是表示相對的位置關係。因此，根據陶瓷加熱器10的方向，有時「上」「下」會變成「下」「上」，變成「左」「右」或變成「前」「後」。
陶瓷加熱器10是半導體製造裝置用構件的其中一個。陶瓷加熱器10是用於支持利用電漿施加CVD、蝕刻等處理的晶圓並且進行加熱，且安裝於未圖示的半導體製程用的腔室的內部。這種陶瓷加熱器10具備陶瓷板12、陶瓷軸20、加熱桿24、RF連接器30、和RF連接構件40。
陶瓷板12是以AlN作為主成分的圓板狀的構件。這種陶瓷板12具備能夠載置晶圓的晶圓載置面12a。在陶瓷板12的與晶圓載置面12a為相反側的面（背面）12b接合陶瓷軸20。在陶瓷板12，埋設有電阻發熱體14與RF電極16。電阻發熱體14是使以Mo為主成分的線圈遍及陶瓷板12的整個表面且以不間斷且不交叉為要領配線為與晶圓載置面12a實質上平行。RF電極16是直徑比陶瓷板12略小的圓盤狀的薄層電極，將以Mo為主成分的細金屬線編織為網狀且由片狀的網目（mesh）所形成。這種RF電極16是在陶瓷板12當中之電阻發熱體14與晶圓載置面12a之間埋設為與晶圓載置面12a實質上平行。以Mo作為電阻發熱體14、RF電極16等的材質是因為與陶瓷板12的主成分之AlN熱膨脹係數接近，且陶瓷板12的製造時難以產生裂痕。電阻發熱體14、RF電極16等即使是Mo以外的材質，只要是與AlN熱膨脹係數接近的導電性材料即可使用。另外，在陶瓷板12的背面12b當中之被陶瓷軸20包圍的區域，插入偵測陶瓷板12的溫度的熱電偶（未圖示）。
陶瓷軸20是以AlN為主成分的圓筒狀的構件，在上部開口的周圍具有第1凸緣（flange）20a，在下部開口的周圍具有第2凸緣20b。第1凸緣20a的端面是藉由固相接合法接合至陶瓷板12的背面12b。第2凸緣20b的端面是固定至未圖示的腔室。
加熱桿24是以Mo等的金屬形成之剖面圓形的桿。一對加熱桿24當中之其中一個的加熱桿24的上端是接合至電阻發熱體14的一端，另外一個的加熱桿24的上端是接合至電阻發熱體14的另一端。一對加熱桿24的下端是露出於陶瓷軸20的中空內部22的外側，且透過電纜26連接至加熱器電源28。雖然加熱器電源28在本實施形態是AC電源，也可以採用DC電源。
RF連接器30是配置於陶瓷軸20的中空內部22的外側（下側）。這種RF連接器30具備插座32與RF基桿36。插座32是以Ni等的導電性金屬形成的大約長方體或大約圓柱形的構件。在插座32的上表面設有用於插入RF連接構件40的RF桿42的2個插入孔34。插入孔34會保持插入的RF桿42。RF基桿36是以Ni等的導電性金屬形成的桿，一體化於插座32的下表面。RF基桿36是透過電纜37連接至RF電源38。
RF連接構件40具有以複數個（在此為2根）RF桿42構成的分歧部44。RF桿42是以Ni等的導電性金屬形成的剖面圓形的桿。複數個RF桿42維持分歧，且上端透過設置於陶瓷板12的背面12b的孔13連接至RF電極16。此外，複數個RF桿42維持分歧，且下端插入RF連接器30的插入孔34。在本實施形態中，RF連接構件40是分歧部44，從RF電極16經過陶瓷軸20的中空內部22以到達RF連接器30。因此，分歧部44的一部分是配置於陶瓷軸20的中空內部22。RF連接構件40是透過RF連接器30及電纜37連接至RF電源38。RF桿42的下端是在比加熱桿24的下端更靠近陶瓷軸20的位置。在RF桿42彼此之間沒有配置加熱桿24。RF桿42彼此的間隔是RF桿42的直徑以上。
接著，說明關於陶瓷加熱器10的使用例。在未圖示的腔室內配置陶瓷加熱器10，在晶圓載置面12a載置晶圓。於是，藉由透過電纜26及加熱桿24將加熱器電源28的電壓施加至電阻加熱器14，加熱晶圓。具體而言，根據未圖示的熱電偶的檢測信號求出晶圓的溫度，為了使上述溫度成為設定溫度（例如350℃或300℃）而控制施加至電阻發熱體14的電壓。此外，藉由透過電纜37、RF連接器30及RF連接構件40將RF電源38的交流高頻電壓施加至RF電極16，使電漿產生於由設置於腔室內的上方的未圖示的對向水平電極與埋設於陶瓷板12的RF電極16所構成的平行平板電極間，利用上述電漿在晶圓施加CVD成膜或施加蝕刻。如果將直流電壓施加至RF電極16就能夠作為靜電電極（ESC電極）來使用。
在以上詳述的陶瓷加熱器10中，RF連接構件40具有以複數個RF桿42構成的分歧部44。藉此，由於RF連接構件40的電流通路的表面積增加，能夠抑制集膚效應所造成之電阻的增加。此外，由於每根RF桿流通的電流變小，每根RF桿的發熱量會減少。另一方面，RF連接器30是配置於陶瓷軸20的中空內部22的外側。藉此，即使RF連接器30發熱，也不會因此造成陶瓷軸20的中空內部22的溫度變高。因此，不會導致配置於陶瓷軸20的中空內部22的RF桿42的溫度容易上升的狀況。因此，利用陶瓷加熱器10，能夠確實防止在陶瓷板12產生熱點。此外，由於是在陶瓷軸20的中空內部22的外側配置RF連接器30，能夠流暢地進行RF連接構件40與RF連接器30的連接作業。
此外，複數個RF桿42，由於是個別地連接至RF電極16，即使複數個RF桿42當中之其中1個因為何種理由而從RF電極16脫落，也可以從其他的RF桿42將電力供給至RF電極16。此外，由於複數個RF桿42連接至RF電極16，不會產生集膚效應所造成之電阻增加，能夠抑制發熱量。
並且，RF連接構件40的尾端（下端）位於比加熱桿24的尾端（下端）更靠近陶瓷軸20的位置。藉此，由於對RF連接構件40的尾端進行的作業與對加熱桿24的尾端進行的作業難以干涉，會能夠容易流暢地進行各自的作業。此外由於RF連接構件40的長度能夠變得比較短，能夠將RF連接構件40的電阻抑制得較低，能夠將RF連接構件40的發熱量抑制得較低。並且，加熱桿24由於高頻電流不流通而沒有集膚效應，且比RF桿42電阻更低，即使較長也幾乎不會增加加熱桿24的發熱量。
此外進一步，由於與發信源的距離越遠雜訊的影響就越弱，藉由在RF桿42之間不配置加熱桿24，施加至加熱桿24的電壓受到施加至RF桿42的電壓的影響而變動的疑慮會較少。
接著，RF桿42彼此的間隔為RF桿42的直徑以上，由於複數個RF桿42是配置為保持充分的間隔，1個RF桿42受到其他的RF桿42的發熱的影響的疑慮較少。
而且，RF桿42優選為比加熱桿24更粗（RF桿42的直徑比加熱桿24的直徑更大）。如此一來，由於RF桿42的表面積變大，流通RF桿42的RF電流的電阻變得較低。因此，每根RF桿42的發熱量進一步減少。
另外，本發明並非限定於上述實施形態，且能夠當然地用屬於本發明的技術範圍內之各種樣態來實施。
例如，代替上述實施形態的RF連接構件40，也可以採用第2圖的RF連接構件140。在第2圖中，與上述實施形態相同的元件以相同的符號標記。RF連接構件140具備以複數個（在此為2根）RF桿142構成的分歧部144、和複數個RF桿142在陶瓷板12的背面12b的前方收成1個的圓柱狀的集約部145。RF桿142維持分歧，下端插入RF連接器30的插入孔34。RF桿142的上端在集約部145集約成1個桿且連接至RF電極16。RF連接構件140從RF電極16經過陶瓷軸20的中空內部22以到達RF連接器30。分歧部144的一部分是配置於陶瓷軸20的中空內部22。RF連接構件140的下端是位於比加熱桿24（參照第1圖）的下端更靠近陶瓷軸20的位置。在第2圖中，由於RF連接構件140的大部分是由RF桿142所構成，能夠抑制發熱。此外，在將RF連接構件140連接至RF電極16時，能夠使設置於陶瓷板12的孔13較少。RF桿142、集約部145等優選為比加熱桿24更粗。如此一來，由於RF桿142、集約部145等的表面積變大，流通於RF桿142、集約部145等的RF電流的電阻變低，其發熱量變小。
代替上述實施形態的RF連接構件40，也可以採用第3圖的RF連接構件240。在第3圖中，與上述實施形態相同的元件以相同的符號標記。RF連接構件240具備以複數個（在此為2根）RF桿242構成的分歧部244、複數個RF桿242在陶瓷板12的背面12b的前方收成1個的圓柱狀的第1集約部245、和複數個RF桿242在RF連接器30的前方收成1個的圓柱狀的第2集約部246。RF桿242的上端在第1集約部245集約成1個桿且連接至RF電極16。RF桿242的下端在第2集約部246集約成1個桿且插入RF連接器30的插入孔34。RF連接構件240從RF電極16經過陶瓷軸20的中空內部22且到達RF連接器30。分歧部244的一部分是配置於陶瓷軸20的中空內部22。RF連接構件240的下端位於比加熱桿24（參照第1圖）的下端更靠近陶瓷軸20的位置。在第3圖中，在將RF連接構件240連接至RF電極16時，能夠使設置於陶瓷板12的孔13較少。此外，在將RF連接構件240連接至RF連接器30時，相較於上述實施形態能夠使連接處（插入孔34）較少。另外，在RF電極16與RF連接器30之間，也可以設置複數個RF連接構件240。RF桿242、第1集約部245及第2集約部246等優選為比加熱桿24更粗。如此一來，由於RF桿242、第1集約部245及第2集約部246等的表面積變大，流通於RF桿242、第1集約部245及第2集約部246的RF電流的電阻變低，其發熱量變小。
代替上述實施形態的RF連接構件40，也可以採用第4圖的RF連接構件340。在第4圖中，與上述實施形態相同的元件以相同的符號標記。RF連接構件340具備以複數個（在此為2根）RF桿342構成的分歧部344、和複數個RF桿342在RF連接器30的前方收成1個的圓柱狀的集約部346。RF桿342維持分歧，連接至RF電極16。RF桿342的下端在集約部346集約成1個桿且插入RF連接器30的插入孔34。RF連接構件340從RF電極16經過陶瓷軸20的中空內部22以到達RF連接器30。分歧部344的一部分是配置於陶瓷軸20的中空內部22。RF連接構件340的下端位於比加熱桿24（參照第1圖）的下端更靠近陶瓷軸20的位置。在第4圖中，在將RF連接構件340連接至RF連接器30時，相較於上述實施形態能夠使連接處（插入孔34）較少。另外，在RF電極16與RF連接器30之間，也可以設置複數個RF連接構件340。RF桿342、集約部346等優選為比加熱桿24更粗。如此一來，由於RF桿342、集約部346等的表面積變大，流通於RF桿342、集約部346的RF電流的電阻變低，其發熱量變小。
在上述實施形態中，雖然RF桿42的剖面（在對縱向垂直的方向切斷時的剖面）是設為圓形，如第5圖所示，也可以設為在RF桿42的剖面的外周部具有至少1個（在此為5個）凹部42a的形狀。具體而言，RF桿42也可以具備至少1個（在此為5個）沿著縱向延伸的溝。如此一來，由於RF桿42的表面積會變得比沒有凹部42a的情況大，能夠更抑制集膚效應所造成之電阻的增加，每根RF桿的發熱量會更減少。
在上述實施形態中，雖然是將RF電極16的形狀設為網目（mesh），也可以是其他的形狀。例如，也可以是線圈狀、平面狀等，也可以是衝孔金屬（punching metal）。
在上述實施形態中，雖然可以採用AlN以作為陶瓷材料，並非特別限定於此，也可以採用例如氧化鋁、氮化矽、碳化矽等。在那種情況下，電阻發熱體14、RF電極16等的材質優選為使用與上述陶瓷的熱膨脹係數接近之材質。
在上述實施形態中，雖然在陶瓷板12埋設電阻發熱體14與RF電極16，也可以進一步埋設靜電電極。如此一來，陶瓷加熱器10也會發揮作為靜電夾頭（chuck）的機能。
在上述實施形態中，雖然例示了遍及陶瓷板12的整個表面且以不間斷且不交叉為要領配線之1區加熱器，並非特別限定於此。例如，也可以採用將陶瓷板12的整個表面分割為複數個區且在每個區以不間斷且不交叉為要領配線之多區加熱器。在這種情況下，只要對各區的電阻發熱體設置一對加熱桿即可。
代替上述實施形態的RF電極16，也可以採用第6圖的RF電極416。在第6圖中，與上述實施形態相同的元件以相同的符號標記。RF電極416是以圓筒狀的連結部416c連接內側圓形電極416a的外邊緣與外側圓環電極416b的內邊緣。內側圓形電極416a與外側圓環電極416b是在高度相異的面配置為上下兩段。構成RF連接構件40（分歧部44）的2根RF桿當中之1根連接內側圓形電極416a的背面，另1根連接外側圓環電極416b的背面。也就是，2根的RF桿42連接至RF電極416的高度相異的各個面。即使如此，也能夠得到與上述實施形態同樣的效果。此外，RF電極416由於是設置為遍及在陶瓷板12的內部高度相異的複數個面。能夠在每個RF電極416的高度相異的面改變電漿的密度。進一步，由於2根RF桿42是個別連接至RF電極416的各個面，能夠確保2根RF桿42間的距離。例如，藉由使發熱的2根RF桿42間的距離較大，能夠防止RF桿42彼此互相加熱。此外進一步，由於RF桿42連接至靠近陶瓷板12的背面12b的外側圓環電極416b與距離背面12b較遠的內側圓環電極416a之兩者，連接至靠近背面12b的外側圓環電極416b的RF桿42的孔的深度變淺，能夠使陶瓷板12的加工負荷變小且抑制破損風險。對此，在2根RF桿42連接至距離背面12b較遠的內側圓環電極416a的情況下，2根RF桿42的孔的深度變深，陶瓷板12的加工負荷變大且破損風險提高。另外，在第6圖，也可以設置與上述實施形態同樣的電阻發熱體14、加熱桿24等。此外，在第6圖，也可以採用第4圖的RF連接構件340以代替RF連接構件40。
本申請是以在2019年8月8日申請的日本專利申請第2019-146413號為優先權主張的基礎，其所有的內容藉由引用而包含於本說明書。
本發明能夠作為用於例如蝕刻裝置、CVD裝置等的半導體裝置的構件來利用。
10:陶瓷加熱器 12:陶瓷板 12a:晶圓載置面 12b:背面 13:孔 14:電阻發熱體 16:RF電極 20:陶瓷軸 20a:第1凸緣 20b:第2凸緣 22:中空內部 24:加熱桿 26:電纜 28:加熱電源 30:RF連接器 32:插座 34:插入孔 36:RF基桿 37:電纜 38:RF電源 40:RF連接構件 42:RF桿 42a:凹部 44:分歧部 140:RF連接構件 142:RF桿 144:分歧部 145:集約部 240:RF連接構件 242:RF桿 244:分歧部 245:第1集約部 246:第2集約部 340:RF連接構件 342:RF桿 344:分歧部 346:集約部 416:RF電極 416a:內側圓形電極 416b:外側圓形電極 416c:連結部
第1圖是陶瓷加熱器10的縱剖面圖。 第2圖是RF連接構件140的周邊部分的縱剖面圖。 第3圖是RF連接構件240的周邊部分的縱剖面圖。 第4圖是RF連接構件340的周邊部分的縱剖面圖。 第5圖是RF桿42的變形例的剖面圖。 第6圖是具備RF桿416的陶瓷加熱器的縱剖面圖。
10:陶瓷加熱器
12:陶瓷板
12a:晶圓載置面
12b:背面
13:孔
14:電阻發熱體
16:RF電極
20:陶瓷軸
20a:第1凸緣
20b:第2凸緣
22:中空內部
24:加熱桿
26:電纜
28:加熱電源
30:RF連接器
32:插座
34:插入孔
36:RF基桿
37:電纜
38:RF電源
40:RF連接構件
42:RF桿
44:分歧部

Claims (8)

  1. 一種半導體製造裝置用構件， 是在表面為晶圓載置面之陶瓷板的背面設有中空的陶瓷軸的構造的半導體裝置用構件，具備： RF電極，埋設於前述陶瓷板； RF連接器，配置於前述陶瓷軸的中空內部的外側；和 RF連接構件，設置於前述RF連接器與前述RF電極之間， 其中前述RF連接構件具有以複數個RF桿構成的分歧部，前述分歧部延伸至前述陶瓷軸的外側。
  2. 如請求項1之半導體製造裝置用構件，其中 前述複數個RF桿在前述陶瓷板的背面的前方的第1集約部收成1個且延伸至前述RF電極。
  3. 如請求項1之半導體製造裝置用構件，其中 前述複數個RF桿個別連接至前述RF電極。
  4. 如請求項3之半導體製造裝置用構件，其中 前述RF電極是在前述陶瓷板的內部設為遍及高度相異的複數個面， 前述複數個RF桿個別連接至前述RF電極的各個面。
  5. 如請求項1~4中任一項之半導體製造裝置用構件，其中 前述複數個RF桿在前述RF連接器的前方的第2集約部收成1個且連接至前述RF連接器。
  6. 如請求項1~5中任一項之半導體製造裝置用構件，其中 在對縱向垂直的方向切斷前述RF桿時的剖面是在外周部至少具有1個凹部的形狀。
  7. 如請求項1~6中任一項之半導體製造裝置用構件，具備： 電阻發熱體，埋設於前述陶瓷板；和 一對加熱桿，連接至前述電阻發熱體，且透過前述陶瓷軸的中空內部設置至前述陶瓷軸的外側為止， 其中前述RF連接構件的尾端位於比前述加熱桿的尾端更靠近前述陶瓷軸的位置。
  8. 如請求項1~6中任一項之半導體製造裝置用構件，具備： 電阻發熱體，埋設於前述陶瓷板；和 一對加熱桿，連接至前述電阻發熱體，且透過前述陶瓷軸的中空內部設置至前述陶瓷軸的外側為止， 其中前述RF桿比前述加熱桿更粗。
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