TWI770737B - 陶瓷加熱器 - Google Patents
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- TWI770737B TWI770737B TW109146176A TW109146176A TWI770737B TW I770737 B TWI770737 B TW I770737B TW 109146176 A TW109146176 A TW 109146176A TW 109146176 A TW109146176 A TW 109146176A TW I770737 B TWI770737 B TW I770737B
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- 239000000919 ceramic Substances 0.000 title claims abstract description 95
- 238000010438 heat treatment Methods 0.000 claims abstract description 78
- 230000002093 peripheral effect Effects 0.000 claims description 74
- 235000012431 wafers Nutrition 0.000 description 16
- 238000005553 drilling Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000036581 peripheral resistance Effects 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
- H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
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- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
- H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
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- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
- H05B3/265—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an inorganic material, e.g. ceramic
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- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
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Abstract
陶瓷加熱器10係包括:陶瓷板20,係在表面具有晶圓載置面20a;電阻發熱體22、24,係被埋設於陶瓷板20;筒狀軸40,係從陶瓷板20之背面20b支撐陶瓷板20;凹部21,係被設置於陶瓷板20之背面20b中被筒狀軸40包圍的軸內區域20d;以及端子23a、23b、25a、25b,係被設置於凹部21之側面21a,並向電阻發熱體22、24供給電力。
Description
本發明係有關於一種陶瓷加熱器。
在半導體製造裝置,係採用用以對晶圓加熱的陶瓷加熱器。作為這種陶瓷加熱器,係已知所謂的2區加熱器。這係在陶瓷加熱器中,埋設由高融點金屬所構成之內周側電阻發熱體與外周側電阻發熱體,藉由向各電阻發熱體分別獨立地供給電力,獨立地控制來自各電阻發熱體的發熱(例如參照專利文獻1)。用以向各電阻發熱體供給電力的端子係被配置於陶瓷板之背面中被軸包圍的區域。
[先行專利文獻]
[專利文獻]
專利文獻1:特開2007-88484號公報
[發明所欲解決之課題]
可是,區數增加時,因為在各區所設置之電阻發熱體的個數亦增加,所以在陶瓷板之背面中被軸包圍的區域配置各電阻發熱體之端子的事成為困難。
本發明係為了解決這種課題所開發者,其主要目的在於作成可有效地利用陶瓷板之背面中被筒狀軸包圍的區域。
[解決課題之手段]
本發明之陶瓷加熱器係包括:
陶瓷板,係在表面具有晶圓載置面;
電阻發熱體,係被埋設於該陶瓷板;
筒狀軸,係從該陶瓷板之背面支撐該陶瓷板;
凹部,係被設置於該陶瓷板之該背面中被該筒狀軸包圍的軸內區域;以及
端子,係被設置成在該凹部之側面露出,並向該電阻發熱體供給電力。
在此陶瓷加熱器,係凹部被設置於陶瓷板之背面中被筒狀軸包圍的軸內區域。用以向電阻發熱體供給電力之端子係被設置成在凹部之側面露出。這種端子係以往,被設置成在陶瓷板之背面的軸內區域露出,但是在本發明係被設置成在凹部之側面露出。因此,可有效地利用陶瓷板之背面的軸內區域。
在本發明之陶瓷加熱器,亦可該凹部係採用與該軸內區域一致的大小。依此方式,因為可使凹部之底面變成寬廣,所以可有效地利用凹部之底面。此外,「大小與軸內區域一致之凹部」係除了凹部之外緣與軸內區域之外緣完全一致的情況以外,還包含凹部之外緣與軸內區域之外緣的差微小的情況。
在本發明之陶瓷加熱器,亦可該電阻發熱體係被設置於將該晶圓載置面分割成複數個的各區,在各區所設置之該電阻發熱體中一部分之電阻發熱體的該端子係被設置成在該凹部之側面露出,剩下之電阻發熱體的該端子係被設置於該陶瓷板之背面的該軸內區域。依此方式,在各區所設置之電阻發熱體的端子係分散地被配置於凹部之側面與陶瓷板之背面的軸內區域。因此,與將全部之電阻發熱體的端子配置於陶瓷板之背面的軸內區域的情況相比,可將該軸內區域有效地利用於其他的構件的配置等。
在本發明之陶瓷加熱器,亦可該電阻發熱體係包含在該晶圓載置面之內周側區所設置的內周側電阻發熱體、與在該晶圓載置面之外周側區所設置的外周側電阻發熱體,該外周側電阻發熱體之該端子係被設置成在該凹部之側面露出,該內周側電阻發熱體之該端子係被設置成被設置成在該陶瓷板之背面的該軸內區域露出。依此方式,因為內周側電阻發熱體與其端子的距離變短,所以可直接或以短的配線連接之。
在本發明之陶瓷加熱器,亦可該凹部之側面係作成位於從該筒狀軸之端部可看到的位置。依此方式,在藉鑽孔加工使端子在凹部之側面露出的情況,作業員係可一面從筒狀軸之端部觀察凹部之側面一面比較容易地進行該鑽孔加工。
本發明之陶瓷加熱器,係亦可具有供電構件,該供電構件係與該端子連接,並被配置於該筒狀軸之內部空間。依此方式,可利用供電構件,向電阻發熱體供給電力。在此情況,亦可與在側面露出之端子連接的供電構件係成為沿著筒狀軸之內壁的形狀。依此方式,可將筒狀軸之內部空間有效地利用於其他的目的。
一面參照圖面一面在以下說明本發明之適合的實施形態。圖1係陶瓷加熱器10之立體圖,圖2係圖1之A-A的剖面圖。
陶瓷加熱器10係為了對被施行蝕刻或CVD等之處理的晶圓W加熱所使用,並被設置於未圖示之真空室內。此陶瓷加熱器10係包括:圓盤形之陶瓷板20,係具有晶圓載置面20a;及筒狀軸40,係與陶瓷板20之和晶圓載置面20a係相反側的面(背面)20b接合。
陶瓷板20係是由陶瓷材料所構成之圓盤形的板,該陶瓷材料係由氮化鋁或氧化鋁等所代表。陶瓷板20之直徑係無特別地限定,例如是約300mm。陶瓷板20係藉與陶瓷板20成同心圓形的虛擬邊界20c(參照圖1)被劃分成小圓形的內周側區Z1與圓環形的外周側區Z2。如圖2所示,在陶瓷板20之內周側區Z1,係埋設內周側電阻發熱體22,而在外周側區Z2,係埋設外周側電阻發熱體24。兩電阻發熱體22、24係由以例如鉬、鎢或那些元素之碳化物為主成分的線圈所構成。
筒狀軸40係從陶瓷板20之背面20b支撐陶瓷板20,與陶瓷板20一樣,由氮化鋁、氧化鋁等之陶瓷所形成。筒狀軸40係上端的凸緣部40a與陶瓷板20之背面20b被接合。在從筒狀軸40的下端觀察時,筒狀軸40係與陶瓷板20成為同心圓狀。在陶瓷板20之背面20b中筒狀軸40之內側的區域(軸內區域20d),係設置凹部21。凹部21係大小與軸內區域20d大致一致的圓形槽。在本實施形態,凹部21之內徑與筒狀軸40之內徑係相同或兩者之差是微小。因此,凹部21之底面21b係與軸內區域20d大致一致。凹部21之側面21a係位於從筒狀軸40之下端可看到的位置。
內周側電阻發熱體22係以如下之方式所形成,從起點22a發端,並一面按照一筆畫之要領在複數個折回部被折回一面被配線於內周側區Z1之約整個區域後,至終點22b。起點22a及終點22b係被設置於內周側區Z1。起點22a及終點22b係與片狀的起點端子23a及終點端子23b直接連接,而該起點端子23a及終點端子23b係由與內周側電阻發熱體22相同的材料所構成。起點端子23a及終點端子23b係被埋設於陶瓷板20,並被設置成在凹部21之底面21b露出。在起點端子23a及終點端子23b,係分別將金屬製(例如Ni製)並直線狀之供電構件42a、42b的上端接合。起點端子23a及終點端子23b係在將供電構件42a、42b接合之前係在凹部21之底面21b露出,但是在將供電構件42a、42b接合之後係因為被供電構件42a、42b或接合層覆蓋,所以在凹部21之底面21b係未露出。
外周側電阻發熱體24係以如下之方式所形成,從起點24a發端,並一面按照一筆畫之要領在複數個折回部被折回一面被配線於外周側區Z2之約整個區域後,至終點24b。起點24a及終點24b係被設置於外周側區Z2。起點24a及終點24b係經由跳線26a、26b與片狀之起點端子25a及終點端子25b連接,而該起點端子25a及終點端子25b係由與外周側電阻發熱體24相同的材料所構成。起點端子25a及終點端子25b係被埋設於陶瓷板20中接近凹部21之側面21a的位置,並被設置成在凹部21之側面21a露出。在起點端子25a及終點端子25b,係分別將金屬製(例如Ni製)並L字形之供電構件44a、44b接合。起點端子25a及終點端子25b係在將供電構件44a、44b接合之前係在凹部21之側面21a露出,但是在將供電構件44a、44b接合之後係因為被供電構件44a、44b或接合層覆蓋,所以在凹部21之側面21a係未露出。
在筒狀軸40之內部,係配置供電構件42a、42b或供電構件44a、44b,而該供電構件42a、42b係與內周側電阻發熱體22之起點端子23a及終點端子23b的各個連接,該供電構件44a、44b係與外周側電阻發熱體24之起點端子25a及終點端子25b的各個連接。在筒狀軸40之內部,係亦配置未圖示之內周側電阻發熱體或未圖示之外周側電阻發熱體,而該內周側電阻發熱體係用以測量陶瓷板20之內周側區Z1的溫度,該外周側電阻發熱體係用以測量陶瓷板20之外周側區Z2的溫度。
其次,說明陶瓷加熱器10之製造例。首先,製作已埋設內周側電阻發熱體22與其端子23a、23b、外周側電阻發熱體24與其端子25a、25b、以及跳線26a、26b之圓盤形的陶瓷板(表背面為平坦者)。接著,在該陶瓷板之背面中成為軸內區域20d之處設置凹部21。凹部21係可藉例如研磨加工、切削加工、噴砂加工等設置。在此時,雖然起點端子23a與終點端子23b係與凹部21之底面21b相對向,但是在仍然被埋設於陶瓷板之狀態而未露出。又,雖然起點端子25a與終點端子25b係與凹部21之側面21a相對向,但是在仍然被埋設於陶瓷板之狀態而未露出。然後,將筒狀軸40之凸緣部40a與所得之陶瓷板的背面接合。作為接合,係例如列舉擴散接合。在此時,因為端子23a、23b、25a、25b係未露出,所以不會因擴散接合時之周圍氣體而發生化學變化(例如氧化)。接著,使用一般之鑽頭在凹部21之底面21b中與起點端子23a相對向的位置及與終點端子23b相對向的位置鑽孔,而使兩端子23a、23b在底面21b露出。又,使用L型鑽頭在凹部21之側面21a中與起點端子25a相對向的位置及與終點端子25b相對向的位置鑽孔,而使兩端子25a、25b在側面21a露出。然後,將各供電構件42a、42b、44a、44b焊接於各端子23a、23b、25a、25b,而得到陶瓷加熱器10。
其次,說明陶瓷加熱器10之使用例。首先,在未圖示之真空室內設置陶瓷加熱器10,再將晶圓W載置於該陶瓷加熱器10的晶圓載置面20a。然後,將向內周側電阻發熱體22供給之電力調整成藉未圖示之內周側熱電偶所檢測出之內周側區Z1的溫度成為預定之內周側目標溫度,而且將向外周側電阻發熱體24供給之電力調整成藉未圖示之外周側熱電偶所檢測出之外周側區Z2的溫度成為預定之外周側目標溫度。藉此,晶圓W之溫度被控制成成為所要的溫度。接著,將真空室內設定成成為真空環境或降壓環境,在真空室內產生電漿,並利用該電漿對晶圓W施行CVD成膜或蝕刻。
在以上所說明之本實施形態的陶瓷加熱器10,用以向外周側電阻發熱體24供給電力之起點端子25a及終點端子25b係被設置成在凹部21之側面21a露出。這種端子25a、25b係以往,被設置成在陶瓷板之背面的軸內區域露出,但是在本實施形態係被設置成在凹部21之側面21a露出。因此,可有效地利用陶瓷板20之背面20b的軸內區域20d。
又,因為凹部21係與軸內區域20d大致一致的大小,所以可使凹部21之底面21b變成寬廣,而可有效地利用凹部21之底面21b。
進而,在內周側區Z1所設置之內周側電阻發熱體22的端子23a、23b、與在外周側區Z2所設置之外周側電阻發熱體24的端子25a、25b係分散地被配置於凹部21之側面21a與陶瓷板20之背面20b的軸內區域20d(凹部21之底面21b)。因此,與將全部之端子23a、23b、25a、25b配置於陶瓷板20之背面20b的軸內區域20d的情況相比,可將軸內區域20d有效地利用於其他的構件的配置等。
進而又,在外周側區Z2所設置之外周側電阻發熱體24的端子25a、25b係被設置成在凹部21之側面21a露出,在內周側區Z1所設置之內周側電阻發熱體22的端子23a、23b係被設置成在陶瓷板20之背面20b的軸內區域20d(凹部21之底面21b)露出。因此,內周側電阻發熱體22之起點22a與起點端子23a的距離或終點22b與終點端子23b的距離變短,而可直接或以短的配線連接之。
而,凹部21之側面21a係因為位於從筒狀軸40之下端可看到的位置,所以在藉鑽孔加工使在陶瓷板20所埋設的端子25a、25b在凹部21之側面21a露出的情況,作業員係可一面從筒狀軸40之下端觀察凹部21之側面21a一面比較容易地進行鑽孔加工。
又,因為陶瓷加熱器10係具有供電構件42a、42b、44a、44b,所以可利用該供電構件42a、42b、44a、44b,向內周側及外周側電阻發熱體22、24個別地供給電力。
此外,本發明係絲毫未被限定為上述之實施形態,只要屬於本發明的技術性範圍,當然能以各種的形態實施。
例如,在上述之實施形態,如圖3所示,亦可與在凹部21的側面21a露出之端子25a、25b連接的供電構件44a、44b係作成沿著筒狀軸40之內壁的形狀。在圖3,對與上述之實施形態一樣的構成元件係附加相同的符號。依此方式,與圖2相比,因為可使筒狀軸40之內部空間變成寬廣,所以可將該內部空間有效地利用於其他的目的。
在上述之實施形態,係將內周側電阻發熱體22之端子23a、23b設置成在陶瓷板20之背面的軸內區域20d露出,但是亦可內周側電阻發熱體22之端子23a、23b亦設置成在凹部21之側面21a露出。
在上述之實施形態,亦可陶瓷板20係製作成將圓環板與圓板之背面相黏貼。具體而言,係亦可在包含凹部21之底面21b的水平面將陶瓷板20分割成上下,並將上側作成圓板,將下側作成圓環板。圓環板之中央孔成為凹部21。圓板係內建內周側與外周側電阻發熱體22、24、及跳線26a、26b中在上下方向延伸的部分。跳線26a、26b中在上下方向延伸之部分的下端係在圓板之背面露出。在將圓環板與圓板之背面相黏貼時,亦可在圓板與圓環板之間夾入跳線26a、26b中在水平方向延伸之部分後相黏貼。跳線26a、26b中在水平方向延伸之部分的一端係與在上下方向延伸之部分的下端連接,而在水平方向延伸之部分的另一端係在凹部21露出。在此情況,亦可在圓環板中與圓板之背面相對向的面,在設置從圓環板之中央孔的側面往外周的長槽後相黏貼。此長槽係可用於插入熱電偶。
在上述之實施形態,係將兩電阻發熱體22、24作成線圈形狀,但是不是特別地被限定為線圈形狀,例如亦可是印刷圖案,亦可是帶形狀或網孔形狀等。
在上述之實施形態,亦可在陶瓷板20不僅內建兩電阻發熱體22、24,而且內建靜電電極或RF電極。
在上述之實施形態,係舉例表示所謂的2區加熱器,但是未特別地限定為2區加熱器。例如,亦可將內周側區Z1劃分成複數個內周側小區,並在各內周側小區按照一筆畫之要領到處拉電阻發熱體。又,亦可將外周側區Z2劃分成複數個外周側小區,並在各外周側小區按照一筆畫之要領到處拉電阻發熱體。在此情況,亦可將一部分之電阻發熱體的端子設置成在凹部之側面露出,並將剩下之電阻發熱體的端子設置於陶瓷板之背面的軸內區域。或者,亦可將全部之電阻發熱體的端子設置成在凹部之側面露出。
本專利申請係將於2020年2月3日所申請之日本專利申請第2020-016115號作為優先權主張的基礎,藉引用在本專利說明書包含其內容的全部。
10:陶瓷加熱器
20:陶瓷板
20a:晶圓載置面
20b:背面
20d:軸內區域
21:凹部
21a:側面
21b:底面
22:內周側電阻發熱體
22a:起點
22b:終點
23a:起點端子
23b:終點端子
24:外周側電阻發熱體
24a:起點
24b:終點
25a:起點端子
25b:終點端子
26a,26b:跳線
40:筒狀軸
40a:凸緣部
42a,42b,44a,44b:供電構件
W:晶圓
Z1:內周側區
Z2:外周側區
[圖1] 係陶瓷加熱器10之立體圖。
[圖2] 係圖1之A-A的剖面圖(縱向剖面圖)。
[圖3] 係陶瓷加熱器10之變形例的縱向剖面圖。
10:陶瓷加熱器
20:陶瓷板
20a:晶圓載置面
20b:背面
20d:軸內區域
21:凹部
21a:側面
21b:底面
22:內周側電阻發熱體
22a:起點
22b:終點
23a:起點端子
23b:終點端子
24:外周側電阻發熱體
24a:起點
24b:終點
25a:起點端子
25b:終點端子
26a,26b:跳線
40:筒狀軸
40a:凸緣部
42a,42b,44a,44b:供電構件
W:晶圓
Z1:內周側區
Z2:外周側區
Claims (5)
- 一種陶瓷加熱器,其係包括:陶瓷板,係在表面具有晶圓載置面;電阻發熱體,係被埋設於該陶瓷板;筒狀軸,係從該陶瓷板之背面支撐該陶瓷板;凹部,係被設置於該陶瓷板之該背面中被該筒狀軸包圍的軸內區域;端子,係被設置成在該凹部之側面露出,並向該電阻發熱體供給電力;以及供電構件,與該端子連接;其中該電阻發熱體係包含在該晶圓載置面之內周側區所設置的內周側電阻發熱體、與在該晶圓載置面之外周側區所設置的外周側電阻發熱體,該外周側電阻發熱體之該端子係被設置成在該凹部之側面露出,該內周側電阻發熱體之該端子係被設置成在該陶瓷板之背面的該軸內區域露出;其中與在該側面露出之該端子連接的該供電構件係成為沿著該筒狀軸之內壁的形狀。
- 如請求項1之陶瓷加熱器,其中該凹部係與該軸內區域一致的大小。
- 如請求項1或2之陶瓷加熱器,其中該電阻發熱體係被設置於將該晶圓載置面分割成複數個的各區,在各區所設置之該電阻發熱體中一部分之電阻發熱體的該端子係被設置成在該凹部之側面露出,剩下之電阻發熱體的該端子係被設置於該陶瓷板之背面的該軸內區域。
- 如請求項1或2之陶瓷加熱器,其中該凹部之側面係位於從該 筒狀軸之端部可看到的位置。
- 如請求項1或2之陶瓷加熱器,其中該供電構件被配置於該筒狀軸之內部空間。
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US11963269B2 (en) | 2024-04-16 |
US20210243846A1 (en) | 2021-08-05 |
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