JP2021125309A - セラミックヒータ - Google Patents
セラミックヒータ Download PDFInfo
- Publication number
- JP2021125309A JP2021125309A JP2020016115A JP2020016115A JP2021125309A JP 2021125309 A JP2021125309 A JP 2021125309A JP 2020016115 A JP2020016115 A JP 2020016115A JP 2020016115 A JP2020016115 A JP 2020016115A JP 2021125309 A JP2021125309 A JP 2021125309A
- Authority
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- Japan
- Prior art keywords
- resistance heating
- heating element
- recess
- peripheral side
- ceramic plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000919 ceramic Substances 0.000 title claims abstract description 109
- 238000010438 heat treatment Methods 0.000 claims abstract description 81
- 230000002093 peripheral effect Effects 0.000 claims description 84
- 238000009792 diffusion process Methods 0.000 description 4
- 238000005553 drilling Methods 0.000 description 4
- 238000005304 joining Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000005422 blasting Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
- H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
- H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
- H05B3/265—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an inorganic material, e.g. ceramic
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/002—Heaters using a particular layout for the resistive material or resistive elements
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Resistance Heating (AREA)
Abstract
【解決手段】セラミックヒータ10は、表面にウエハ載置面20aを有するセラミックプレート20と、セラミックプレート20に埋設された抵抗発熱体22,24と、セラミックプレート20をセラミックプレート20の裏面20bから支持する筒状シャフト40と、セラミックプレート20の裏面20bのうち筒状シャフト40に囲まれたシャフト内領域20dに設けられた凹部21と、凹部21の側面21aに設けられ、抵抗発熱体22,24に電力を供給する端子23a,23b,25a,25bと、を備える。
【選択図】図2
Description
表面にウエハ載置面を有するセラミックプレートと、
前記セラミックプレートに埋設された抵抗発熱体と、
前記セラミックプレートを前記セラミックプレートの裏面から支持する筒状シャフトと、
前記セラミックプレートの前記裏面のうち前記筒状シャフトに囲まれたシャフト内領域に設けられた凹部と、
前記凹部の側面に露出するように設けられ、前記抵抗発熱体に電力を供給する端子と、
を備えたものである。
Claims (7)
- 表面にウエハ載置面を有するセラミックプレートと、
前記セラミックプレートに埋設された抵抗発熱体と、
前記セラミックプレートを前記セラミックプレートの裏面から支持する筒状シャフトと、
前記セラミックプレートの前記裏面のうち前記筒状シャフトに囲まれたシャフト内領域に設けられた凹部と、
前記凹部の側面に露出するように設けられ、前記抵抗発熱体に電力を供給する端子と、
を備えたセラミックヒータ。 - 前記凹部は、前記シャフト内領域と一致する大きさである、
請求項1に記載のセラミックヒータ。 - 前記抵抗発熱体は、前記ウエハ載置面を複数に分割したゾーンごとに設けられ、各ゾーンに設けられた前記抵抗発熱体のうち一部の抵抗発熱体の前記端子は、前記凹部の側面に露出するように設けられ、残りの抵抗発熱体の前記端子は、前記セラミックプレートの裏面の前記シャフト内領域に設けられている、
請求項1又は2に記載のセラミックヒータ。 - 前記抵抗発熱体は、前記ウエハ載置面の内周側ゾーンに設けられた内周側抵抗発熱体と、前記ウエハ載置面の外周側ゾーンに設けられた外周側抵抗発熱体と、を含み、前記外周側抵抗発熱体の前記端子は、前記凹部の側面に露出するように設けられ、前記内周側抵抗発熱体の前記端子は、前記セラミックプレートの裏面の前記シャフト内領域に露出するように設けられている、
請求項1〜3のいずれか1項に記載のセラミックヒータ。 - 前記凹部の側面は、前記筒状シャフトの端部から視認可能な位置にある、
請求項1〜4のいずれか1項に記載のセラミックヒータ。 - 請求項1〜5のいずれか1項に記載のセラミックヒータであって、
前記端子に接続され、前記筒状シャフトの内部空間に配置された給電部材
を備えたセラミックヒータ。 - 前記側面に露出している前記端子に接続された前記給電部材は、前記筒状シャフトの内壁に沿う形状になっている、
請求項6に記載のセラミックヒータ。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020016115A JP7248607B2 (ja) | 2020-02-03 | 2020-02-03 | セラミックヒータ |
US17/132,416 US11963269B2 (en) | 2020-02-03 | 2020-12-23 | Ceramic heater |
TW109146176A TWI770737B (zh) | 2020-02-03 | 2020-12-25 | 陶瓷加熱器 |
KR1020210011328A KR102626206B1 (ko) | 2020-02-03 | 2021-01-27 | 세라믹 히터 |
CN202110146168.3A CN113207199B (zh) | 2020-02-03 | 2021-02-02 | 陶瓷加热器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020016115A JP7248607B2 (ja) | 2020-02-03 | 2020-02-03 | セラミックヒータ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021125309A true JP2021125309A (ja) | 2021-08-30 |
JP7248607B2 JP7248607B2 (ja) | 2023-03-29 |
Family
ID=77025322
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020016115A Active JP7248607B2 (ja) | 2020-02-03 | 2020-02-03 | セラミックヒータ |
Country Status (5)
Country | Link |
---|---|
US (1) | US11963269B2 (ja) |
JP (1) | JP7248607B2 (ja) |
KR (1) | KR102626206B1 (ja) |
CN (1) | CN113207199B (ja) |
TW (1) | TWI770737B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117248196A (zh) * | 2022-12-28 | 2023-12-19 | 无锡至辰科技有限公司 | 一种高均匀性晶圆加热器及其加工方法 |
CN117286474B (zh) * | 2022-12-28 | 2024-06-21 | 无锡至辰科技有限公司 | 一种高温金属外壳晶圆加热器及其加工方法 |
Citations (11)
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JPS6345814A (ja) * | 1986-08-13 | 1988-02-26 | Hitachi Ltd | 分子線エピタキシ装置の基板加熱装置 |
JP2000164602A (ja) * | 1998-11-30 | 2000-06-16 | Toshiba Ceramics Co Ltd | 封止端子 |
JP2002508587A (ja) * | 1998-03-26 | 2002-03-19 | アプライド マテリアルズ インコーポレイテッド | 高温多層合金ヒータアッセンブリ及び関連する方法 |
JP2005333127A (ja) * | 2005-04-25 | 2005-12-02 | Kyocera Corp | 試料加熱装置および処理装置ならびにそれを用いた試料の処理方法 |
JP2006179897A (ja) * | 2001-09-11 | 2006-07-06 | Sumitomo Electric Ind Ltd | 被処理物保持体、半導体製造装置用サセプタおよび処理装置 |
JP2007220595A (ja) * | 2006-02-20 | 2007-08-30 | Toshiba Ceramics Co Ltd | 面状ヒータ |
JP2008016396A (ja) * | 2006-07-07 | 2008-01-24 | Nhk Spring Co Ltd | ヒータユニット |
JP2012160368A (ja) * | 2011-02-01 | 2012-08-23 | Nihon Ceratec Co Ltd | セラミックスヒータ及びその製造方法 |
JP2017162878A (ja) * | 2016-03-07 | 2017-09-14 | 日本特殊陶業株式会社 | 基板支持装置 |
JP2019079774A (ja) * | 2017-10-27 | 2019-05-23 | 京セラ株式会社 | ヒータ及びヒータシステム |
JP2019125516A (ja) * | 2018-01-18 | 2019-07-25 | 助川電気工業株式会社 | 基板ヒータ |
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CN1533370A (zh) | 2001-07-19 | 2004-09-29 | Ҿ쳵���ʽ���� | 陶瓷接合体、陶瓷接合体的接合方法和陶瓷结构体 |
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JP4640842B2 (ja) | 2006-10-11 | 2011-03-02 | 日本碍子株式会社 | 加熱装置 |
JP2009043589A (ja) | 2007-08-09 | 2009-02-26 | Sei Hybrid Kk | 半導体又はフラットパネルディスプレイ製造・検査装置用のヒータユニット及びそれを備えた装置 |
JP2011165891A (ja) | 2010-02-09 | 2011-08-25 | Tokyo Electron Ltd | 載置台構造及び処理装置 |
CN106856184A (zh) | 2015-12-08 | 2017-06-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 加热基座以及半导体加工设备 |
JP6618409B2 (ja) * | 2016-03-31 | 2019-12-11 | 日本特殊陶業株式会社 | 基板保持装置及びその製造方法 |
-
2020
- 2020-02-03 JP JP2020016115A patent/JP7248607B2/ja active Active
- 2020-12-23 US US17/132,416 patent/US11963269B2/en active Active
- 2020-12-25 TW TW109146176A patent/TWI770737B/zh active
-
2021
- 2021-01-27 KR KR1020210011328A patent/KR102626206B1/ko active IP Right Grant
- 2021-02-02 CN CN202110146168.3A patent/CN113207199B/zh active Active
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6345814A (ja) * | 1986-08-13 | 1988-02-26 | Hitachi Ltd | 分子線エピタキシ装置の基板加熱装置 |
JP2002508587A (ja) * | 1998-03-26 | 2002-03-19 | アプライド マテリアルズ インコーポレイテッド | 高温多層合金ヒータアッセンブリ及び関連する方法 |
JP2000164602A (ja) * | 1998-11-30 | 2000-06-16 | Toshiba Ceramics Co Ltd | 封止端子 |
JP2006179897A (ja) * | 2001-09-11 | 2006-07-06 | Sumitomo Electric Ind Ltd | 被処理物保持体、半導体製造装置用サセプタおよび処理装置 |
JP2005333127A (ja) * | 2005-04-25 | 2005-12-02 | Kyocera Corp | 試料加熱装置および処理装置ならびにそれを用いた試料の処理方法 |
JP2007220595A (ja) * | 2006-02-20 | 2007-08-30 | Toshiba Ceramics Co Ltd | 面状ヒータ |
JP2008016396A (ja) * | 2006-07-07 | 2008-01-24 | Nhk Spring Co Ltd | ヒータユニット |
JP2012160368A (ja) * | 2011-02-01 | 2012-08-23 | Nihon Ceratec Co Ltd | セラミックスヒータ及びその製造方法 |
JP2017162878A (ja) * | 2016-03-07 | 2017-09-14 | 日本特殊陶業株式会社 | 基板支持装置 |
JP2019079774A (ja) * | 2017-10-27 | 2019-05-23 | 京セラ株式会社 | ヒータ及びヒータシステム |
JP2019125516A (ja) * | 2018-01-18 | 2019-07-25 | 助川電気工業株式会社 | 基板ヒータ |
Also Published As
Publication number | Publication date |
---|---|
CN113207199A (zh) | 2021-08-03 |
US20210243846A1 (en) | 2021-08-05 |
TWI770737B (zh) | 2022-07-11 |
US11963269B2 (en) | 2024-04-16 |
KR20210098861A (ko) | 2021-08-11 |
TW202133679A (zh) | 2021-09-01 |
CN113207199B (zh) | 2024-05-10 |
JP7248607B2 (ja) | 2023-03-29 |
KR102626206B1 (ko) | 2024-01-18 |
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