CN113207199B - 陶瓷加热器 - Google Patents

陶瓷加热器 Download PDF

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CN113207199B
CN113207199B CN202110146168.3A CN202110146168A CN113207199B CN 113207199 B CN113207199 B CN 113207199B CN 202110146168 A CN202110146168 A CN 202110146168A CN 113207199 B CN113207199 B CN 113207199B
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梶原升
本山修一郎
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NGK Insulators Ltd
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00Ohmic-resistance heating
    • H05B3/10Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/141Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
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    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00Ohmic-resistance heating
    • H05B3/20Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/28Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
    • H05B3/283Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00Ohmic-resistance heating
    • H05B3/20Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/26Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
    • H05B3/265Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an inorganic material, e.g. ceramic
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/002Heaters using a particular layout for the resistive material or resistive elements

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Abstract

本发明提供一种陶瓷加热器。陶瓷加热器(10)具备:在表面具有晶片载置面(20a)的陶瓷板(20);埋设在陶瓷板(20)中的电阻发热体(22、24);从陶瓷板(20)的背面(20b)支撑陶瓷板(20)的筒状轴(40);设置于陶瓷板(20)的背面(20b)中被筒状轴(40)包围的轴内区域(20d)的凹部(21);设置于凹部(21)的侧面(21a)而向电阻发热体(22、24)供给电力的端子(23a、23b、25a、25b)。

Description

陶瓷加热器
技术领域
本发明涉及一种陶瓷加热器。
背景技术
在半导体制造装置中,采用用于对晶片进行加热的陶瓷加热器。作为这样的陶瓷加热器,已知有所谓的双区加热器。该双区加热器通过在陶瓷板中埋设由高熔点金属构成的内周侧电阻发热体和外周侧电阻发热体,并对各电阻发热体分别独立地供给电力,从而独立地控制来自各电阻发热体的发热(例如参照专利文献1)。用于向各电阻发热体供给电力的端子配置于陶瓷板背面中的被轴包围的区域。
现有技术文献
专利文献
专利文献1:日本特开2007-88484号公报
发明内容
发明所要解决的课题
然而,若区域数增加,则针对每个区域设置的电阻发热体的数量也增加,因此难以在陶瓷板的背面中被轴包围的区域配置各电阻发热体的端子。
本发明是为了解决这样的课题而完成的,其主要目的在于能够有效地利用陶瓷板的背面中被筒状轴包围的区域。
用于解决课题的方案
本发明的陶瓷加热器具备:
陶瓷板,其在表面具有晶片载置面;
电阻发热体,其埋设在所述陶瓷板中;
筒状轴,其从所述陶瓷板的背面支撑所述陶瓷板;
凹部,其设置在所述陶瓷板的所述背面中被所述筒状轴包围的轴内区域;以及
端子,其向所述电阻发热体供给电力,并设置为在所述凹部的侧面露出。
在该陶瓷加热器中,在陶瓷板的背面中被筒状轴包围的轴内区域设置有凹部。用于向电阻发热体供给电力的端子设置为在凹部的侧面露出。这样的端子以往被设置为在陶瓷板背面的轴内区域露出,但在本发明中,设置为在凹部的侧面露出。因此,能够有效地利用陶瓷板的背面的轴内区域。
在本发明的陶瓷加热器中,所述凹部的大小也可以与所述轴内区域一致。这样的话,能够扩大凹部的底面,因此能够有效地利用凹部的底面。另外,所谓“大小与轴内区域一致的凹部”,是指除了包括凹部的外缘与轴内区域的外缘完全一致的情况以外,还包括凹部的外缘与轴内区域的外缘之差微小的情况。
在本发明的陶瓷加热器中,所述电阻发热体也可以设置于将所述晶片载置面分割成多个而得到的每个区域,设置于各区域的所述电阻发热体中的一部分电阻发热体的所述端子设置为在所述凹部的侧面露出,剩余的电阻发热体的所述端子设置于所述陶瓷板背面的所述轴内区域。这样的话,针对每个区域设置的电阻发热体的端子分散配置在凹部的侧面和陶瓷板背面的轴内区域。因此,与将所有的电阻发热体的端子配置于陶瓷板背面的轴内区域的情况相比,能够将该轴内区域有效地利用于其他部件的配置等。
在本发明的陶瓷加热器中,所述电阻发热体也可以包括设置于所述晶片载置面的内周侧区域的内周侧电阻发热体;以及设置于所述晶片载置面的外周侧区域的外周侧电阻发热体,所述外周侧电阻发热体的所述端子设置为在所述凹部的侧面露出,所述内周侧电阻发热体的所述端子设置为在所述陶瓷板的背面的所述轴内区域露出。这样的话,内周侧电阻发热体与其端子的距离变短,因此能够将它们直接连接或用较短的配线连接。
在本发明的陶瓷加热器中,所述凹部的侧面也可以位于能够从所述筒状轴的端部目视确认的位置。这样的话,在通过开孔加工使端子在凹部的侧面露出的情况下,作业者能够一边从筒状轴的端部观察凹部的侧面一边比较容易地进行该开孔加工。
本发明的陶瓷加热器也可以具备与所述端子连接且配置于所述筒状轴的内部空间的供电部件。这样的话,能够利用供电部件向电阻发热体供给电力。在该情况下,与在侧面露出的端子连接的供电部件也可以呈沿着筒状轴的内壁的形状。这样的话,能够将筒状轴的内部空间有效地利用于其他目的。
附图说明
图1:陶瓷加热器10的立体图。
图2:图1的A-A剖视图(纵剖视图)。
图3:陶瓷加热器10的变形例的纵剖视图。
具体实施方式
以下,参照附图对本发明的优选实施方式进行说明。图1是陶瓷加热器10的立体图,图2是图1的A-A剖视图。
陶瓷加热器10用于对要实施蚀刻、CVD等处理的晶片W进行加热,设置于未图示的真空腔内。该陶瓷加热器10具备:具有晶片载置面20a的圆盘状的陶瓷板20;以及接合在陶瓷板20的与晶片载置面20a相反一侧的面(背面)20b的筒状轴40。
陶瓷板20是由氮化铝、氧化铝等为代表的陶瓷材料构成的圆盘状的板。陶瓷板20的直径没有特别限定,例如为300mm左右。陶瓷板20通过与陶瓷板20呈同心圆状的假想边界20c(参照图1)而形成为小圆形的内周侧区域Z1和圆环状的外周侧区域Z2。如图2所示,在陶瓷板20的内周侧区域Z1埋设有内周侧电阻发热体22,在外周侧区域Z2中埋设有外周侧电阻发热体24。两种电阻发热体22、24例如由钼、钨或以它们的碳化物为主成分的线圈构成。
筒状轴40从陶瓷板20的背面20b支撑陶瓷板20,与陶瓷板20同样由氮化铝、氧化铝等陶瓷形成。筒状轴40的上端的凸缘部40a与陶瓷板20的背面20b接合。从筒状轴40的下端观察时,筒状轴40与陶瓷板20呈同心圆状。在陶瓷板20的背面20b中的筒状轴40的内侧的区域(轴内区域20d)设置有凹部21。凹部21是大小与轴内区域20d大致一致的圆形槽。在本实施方式中,凹部21的内径与筒状轴40的内径相同或两者之差微小。因此,凹部21的底面21b与轴内区域20d大致一致。凹部21的侧面21a位于能够从筒状轴40的下端目视确认的位置。
内周侧电阻发热体22形成为:从起点22a出发,以一笔画的要领在多个折回部折回并在内周侧区域Z1的大致整个区域配线后,到达终点22b。起点22a和终点22b设置于内周侧区域Z1。起点22a及终点22b直接连接至由与内周侧电阻发热体22相同的材料构成的平板状的起点端子23a及终点端子23b。起点端子23a及终点端子23b埋设在陶瓷板22中,设置为在凹部21的底面21b露出。在起点端子23a和终点端子23b上,分别接合有金属制(例如Ni制)且直线状的供电部件42a、42b的上端。起点端子23a和终点端子23b在与供电部件42a、42b接合之前,在凹部21的底面21b露出,但在与供电部件42a、42b接合后,被供电部件42a、42b、接合层覆盖,因此不在凹部21的底面21b露出。
外周侧电阻发热体24形成为:从起点24a出发,以一笔画的要领在多个折回部折回并在外周侧区域Z2的大致整个区域配线后,到达终点24b。起点24a和终点24b设置于外周侧区域Z2。起点24a及终点24b经由跳线26a、26b连接至由与外周侧电阻发热体24相同的材料构成的平板状的起点端子25a及终点端子25b。起点端子25a和终点端子25b埋设在陶瓷板20中的靠近凹部21的侧面21a的位置,设置为在凹部21的侧面21a露出。在起点端子25a及终点端子25b上分别接合有金属制(例如Ni制)且L字状的供电部件44a、44b。起点端子25a和终点端子25b在与供电部件44a、44b接合之前,在凹部21的侧面21a露出,但在与供电部件44a、44b接合后被供电部件44a、44b、接合层覆盖,因此不在凹部21的侧面21a露出。
在筒状轴40的内部配置有分别与内周侧电阻发热体22的起点端子23a以及终点端子23b连接的供电部件42a、42b、分别与外周侧电阻发热体24的起点端子25a以及终点端子25b连接的供电部件44a、44b。在筒状轴40的内部还配置有用于测定陶瓷板20的内周侧区域Z1的温度的未图示的内周侧热电偶、用于测定陶瓷板20的外周侧区域Z2的温度的未图示的外周侧热电偶。
接着,对陶瓷加热器10的制造例进行说明。首先,制作埋设有内周侧电阻发热体22及其端子23a、23b、外周侧电阻发热体24及其端子25a、25b、以及跳线26a、26b的圆盘状的陶瓷板(表面和背面平坦的陶瓷板)。接着,在该陶瓷板的背面中的成为轴内区域20d的部位设置凹部21。凹部21例如能够通过磨削加工、切削加工、喷砂加工等来设置。此时,起点端子23a和终点端子23b虽然与凹部21的底面21b相对,但保持埋设于陶瓷板中的状态而没有露出。另外,起点端子25a和终点端子25b虽然与凹部21的侧面21a相对,但保持埋设于陶瓷板中的状态而没有露出。接着,在所得到的陶瓷板的背面接合筒状轴40的凸缘部40a。作为接合,例如可举出扩散接合。此时,由于端子23a、23b、25a、25b没有露出,因此不会因扩散接合时的气氛而发生化学变化(例如氧化)。接着,使用通常的钻头,在凹部21的底面21b中与起点端子23a相对的位置和与终点端子23b相对的位置开孔,使两个端子23a、23b在底面21b露出。另外,使用L型钻头,在凹部21的侧面21a中与起点端子25a相对的位置和与终点端子25b相对的位置开孔,使两个端子25a、25b在侧面21a露出。然后,将各供电部件42a、42b、44a、44b钎焊接合于各端子23a、23b、25a、25b,得到陶瓷加热器20。
接着,对陶瓷加热器10的使用例进行说明。首先,在未图示的真空腔内设置陶瓷加热器10,在该陶瓷加热器10的晶片载置面20a载置晶片W。然后,调整向内周侧电阻发热体22供给的电力,以使由未图示的内周侧热电偶检测出的内周侧区域Z1的温度成为预先确定的内周侧目标温度,并且调整向外周侧电阻发热体24供给的电力,以使由未图示的外周侧热电偶检测出的外周侧区域Z2的温度成为预先确定的外周侧目标温度。由此,将晶片W的温度控制为所期望的温度。然后,将真空腔内设定为真空气氛或减压气氛,在真空腔内产生等离子体,利用该等离子体对晶片W实施CVD成膜或实施蚀刻。
在以上说明的本实施方式的陶瓷加热器10中,用于向外周侧电阻发热体24供给电力的起点端子25a及终点端子25b设置为在凹部21的侧面21a露出。这样的端子25a、25b以往是设置为在陶瓷板背面的轴内区域露出的,但在本实施方式中,设置为在凹部21的侧面21a露出。因此,能够有效地利用陶瓷板20的背面20b的轴内区域20d。
另外,由于凹部21的大小与轴内区域20d大致一致,因此能够扩大凹部21的底面21b,能够有效地利用凹部21的底面21b。
而且,设置于内周侧区域Z1的内周侧电阻发热体22的端子23a、23b与设置于外周侧区域Z2的外周侧电阻发热体24的端子25a、25b分散配置于凹部21的侧面21a与陶瓷板20的背面20b的轴内区域20d(凹部21的底面21b)。因此,与将所有端子23a、23b、25a、25b配置于陶瓷板20的背面20b的轴内区域20d的情况相比,能够将轴内区域20d有效地利用于其他部件的配置等。
此外,设置于外周侧区域Z2的外周侧电阻发热体24的端子25a、25b设置为在凹部21的侧面21a露出,设置于内周侧区域Z1的内周侧电阻发热体22的端子23a、23b设置为在陶瓷板20的背面20b的轴内区域20d(凹部21的底面21b)露出。因此,内周侧电阻发热体22的起点22a与起点端子23a的距离、终点22b与终点端子23b的距离变短,能够将它们直接连接或用较短的配线连接。
并且,由于凹部21的侧面21a位于能够从筒状轴40的下端目视确认的位置,因此在通过开孔加工使埋设于陶瓷板20的端子25a、25b露出于凹部21的侧面21a的情况下,作业者能够一边从筒状轴40的下端观察凹部21的侧面21a一边比较容易地进行该开孔加工。
而且,由于陶瓷加热器10具备供电部件42a、42b、44a、44b,因此能够利用该供电部件42a、42b、44a、44b分别向内周侧及外周侧电阻发热体22、24供给电力。
另外,不言而喻,本发明不受上述实施方式的任何限定,只要属于本发明的技术范围,则能够以各种方式实施。
例如,在上述的实施方式中,如图3所示,与在凹部21的侧面21a露出的端子25a、25b连接的供电部件44a、44b也可以呈沿着筒状轴40的内壁的形状。在图3中,对于与上述实施方式相同的构成要素赋予了相同的附图标记。这样的话,与图2相比,筒状轴40的内部空间变大,因此能够将该内部空间有效地利用于其他目的。
在上述的实施方式中,将内周侧电阻发热体22的端子23a、23b设置为在陶瓷板20的背面的轴内区域20d露出,但也可以将内周侧电阻发热体22的端子23a、23b设置为在凹部21的侧面21a露出。
在上述的实施方式中,陶瓷板20也可以在圆板的背面贴合圆环板而制作。具体而言,也可以将陶瓷板20以包含凹部21的底面21b的水平面为界上下分割,将上侧设为圆板,将下侧设为圆环板。圆环板的中央孔成为凹部21。圆板内置有内周侧电阻发热体22及外周侧电阻发热体24和跳线26a、26b中沿上下方向延伸的部分。跳线26a、26b中沿上下方向延伸的部分的下端露出于圆板的背面。在将圆环板贴合于圆板的背面时,也可以在圆板与圆环板之间夹入跳线26a、26b中沿水平方向延伸的部分而进行贴合。使跳线26a、26b中沿水平方向延伸的部分的一端与沿上下方向延伸的部分的下端连接,使沿水平方向延伸的部分的另一端露出于凹部21。在该情况下,也可以在圆环板中与圆板的背面相对的面上设置从圆环板的中央孔的侧面朝向外周的长槽之后进行贴合。该长槽能够用于插通热电偶。
在上述的实施方式中,将两种电阻发热体22、24设为线圈形状,但并不特别限定于线圈形状,例如可以是印刷图案,也可以是带形状、网眼形状等。
在上述的实施方式中,也可以在陶瓷板20中除了两种电阻发热体22、24之外还内置静电电极、RF电极。
在上述的实施方式中,例示了所谓的双区加热器,但并不特别限定于双区加热器。例如,也可以将内周侧区域Z1分为多个内周侧小区,针对每个内周侧小区以一笔画的要领布置电阻发热体。另外,也可以将外周侧区域Z2分为多个外周侧小区,针对每个外周侧小区,以一笔画的要领布置电阻发热体。在该情况下,可以将一部分电阻发热体的端子设置为在凹部的侧面露出,并将剩余的电阻发热体的端子设置于陶瓷板背面的轴内区域。或者,也可以将全部的电阻发热体的端子设置为在凹部的侧面露出。
本申请将2020年2月3日申请的日本专利申请第2020-016115号作为优先权的基础,通过引用将其全部内容包含在本说明书中。

Claims (6)

1.一种陶瓷加热器,具备:
陶瓷板,其在表面具有晶片载置面;
电阻发热体,其埋设在所述陶瓷板中;
筒状轴,其从所述陶瓷板的背面支撑所述陶瓷板;
凹部,其设置在所述陶瓷板的所述背面中被所述筒状轴包围的轴内区域;以及
端子,其向所述电阻发热体供给电力,并设置为在所述凹部的侧面露出,
所述端子在所述凹部的侧面的与所述凹部的侧面的表面相比进一步凹陷的位置露出,
陶瓷加热器具备与所述端子连接且配置于所述筒状轴的内部空间的供电部件,所述供电部件为L字状。
2.根据权利要求1所述的陶瓷加热器,其中,所述凹部的大小与所述轴内区域一致。
3.根据权利要求1或2所述的陶瓷加热器,其中,所述电阻发热体设置于将所述晶片载置面分割成多个而得到的每个区域,设置于各区域的所述电阻发热体中的一部分电阻发热体的所述端子设置为在所述凹部的侧面露出,剩余的电阻发热体的所述端子设置于所述陶瓷板的背面的所述轴内区域。
4.根据权利要求1或2所述的陶瓷加热器,其中,所述电阻发热体包括设置在所述晶片载置面的内周侧区域的内周侧电阻发热体、以及设置在所述晶片载置面的外周侧区域的外周侧电阻发热体,所述外周侧电阻发热体的所述端子设置为在所述凹部的侧面露出,所述内周侧电阻发热体的所述端子设置为在所述陶瓷板的背面的所述轴内区域露出。
5.根据权利要求1或2所述的陶瓷加热器,其中,所述凹部的侧面位于能够从所述筒状轴的端部目视确认的位置。
6.根据权利要求1或2所述的陶瓷加热器,其中,
与在所述侧面露出的所述端子连接的所述供电部件呈沿着所述筒状轴的内壁的形状。
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