KR102486378B1 - 플라즈마 처리 장비에서의 내부 표면 컨디셔닝 평가를 위한 시스템들 및 방법들 - Google Patents

플라즈마 처리 장비에서의 내부 표면 컨디셔닝 평가를 위한 시스템들 및 방법들 Download PDF

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KR102486378B1
KR102486378B1 KR1020177012596A KR20177012596A KR102486378B1 KR 102486378 B1 KR102486378 B1 KR 102486378B1 KR 1020177012596 A KR1020177012596 A KR 1020177012596A KR 20177012596 A KR20177012596 A KR 20177012596A KR 102486378 B1 KR102486378 B1 KR 102486378B1
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plasma
electrode
insulator
plane
optical
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KR20170070120A (ko
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수남 박
위페이 주
에드윈 씨. 수아레스
니틴 케이. 잉글
드미트리 루보미르스키
자인 황
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어플라이드 머티어리얼스, 인코포레이티드
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  • Drying Of Semiconductors (AREA)

Abstract

실시예에서, 플라즈마 소스는 내부의 제1 천공들을 통해 하나 이상의 플라즈마 소스 가스를 이송하도록 구성된 제1 전극; 제1 전극의 주변부 주위에서 제1 전극과 접촉하여 배치된 절연체; 제2 전극 - 제2 전극은, 제1 전극, 제2 전극 및 절연체가 플라즈마 발생 공동을 정의하도록 제2 전극의 주변부가 절연체에 맞닿은 상태로 배치됨 - 을 포함한다. 제2 전극은 플라즈마 발생 공동으로부터 제2 전극을 통해 프로세스 챔버를 향하여 플라즈마 생성물들을 이동시키도록 구성된다. 플라즈마 생성물들을 생성하기 위해 플라즈마 발생 공동 내에서 하나 이상의 플라즈마 소스 가스로 플라즈마를 점화시키도록 전력 공급부가 제1 전극 및 제2 전극에 걸쳐 전기 전력을 제공한다. 제1 전극, 제2 전극 및 절연체 중 하나는 플라즈마로부터의 광학 신호를 제공하는 포트를 포함한다.

Description

플라즈마 처리 장비에서의 내부 표면 컨디셔닝 평가를 위한 시스템들 및 방법들{SYSTEMS AND METHODS FOR INTERNAL SURFACE CONDITIONING ASSESSMENT IN PLASMA PROCESSING EQUIPMENT}
본 개시내용은 플라즈마 처리 장비의 분야에 광범위하게 적용된다. 더 구체적으로는, 광학 방출 분광법(optical emission spectroscopy)을 이용한 플라즈마 발생기의 내부 표면 컨디셔닝 평가(internal surface conditioning assessment)를 위한 시스템들 및 방법들이 개시되어 있다.
반도체 처리는 반도체 웨이퍼들 상에 재료를 퇴적하거나 세정하거나 또는 에칭하기 위해 플라즈마 처리를 종종 이용한다. 예측가능하고 재현가능한 웨이퍼 처리는 안정적이고 잘 제어되는 플라즈마 처리 파라미터들에 의해 용이해진다. 플라즈마 처리에 수반되는 장비 및/또는 재료에 대한 특정 변화들은 플라즈마 처리의 안정성을 일시적으로 파괴할 수 있다. 이것은, 단일 프로세스에서의 장기 이용으로부터 기인하는 표면 화학작용(surface chemistry)과 비교하여 볼 때, 이러한 변화들이 플라즈마 시스템 컴포넌트들의 표면 화학작용에 영향을 미칠 때에 전형적으로 발생한다. 예를 들어, 플라즈마 챔버 컴포넌트들은 처음 이용 시에 또는 챔버가 대기(atmospheric air)로 환기된(vented) 이후에, 컨디셔닝을 요구할 수 있다. 이러한 경우들에서, 플라즈마 프로세스가 초기에는 변하지만 시간이 지남에 따라, 예를 들어 프로세스 챔버 내의 표면 코팅들이 플라즈마 프로세스 조건들과 평형 상태로 됨에 따라 안정화될 수 있는 성과물들(deliverables), 예컨대 에칭률, 에칭 선택성 또는 퇴적률을 나타낼 수 있다. 반도체 제조자들은, 새로운 또는 보수된 플라즈마 챔버가 가능한 한 빨리 이용되게 될 수 있도록, 프로세스 조건들의 급속한 안정화 및 프로세스 안정성의 신뢰가능한 확인을 가치있게 여긴다.
실시예에서, 플라즈마 소스는 내부의 제1 천공들을 통해 하나 이상의 플라즈마 소스 가스를 이송하도록 구성된 제1 전극; 제1 전극의 주변부 주위에서 제1 전극과 접촉하여 배치된 절연체; 및 제2 전극 - 제2 전극은, 제1 전극, 제2 전극 및 절연체가 플라즈마 발생 공동을 정의하도록 제2 전극의 주변부가 절연체에 맞닿은 상태로 배치됨 - 을 포함한다. 제2 전극은 플라즈마 발생 공동으로부터 제2 전극을 통해 프로세스 챔버를 향하여 플라즈마 생성물들을 이동시키도록 구성된다. 플라즈마 생성물들을 생성하기 위해 플라즈마 발생 공동에서 하나 이상의 플라즈마 소스 가스로 플라즈마를 점화(ignite)시키도록 전력 공급부가 제1 전극 및 제2 전극에 걸쳐 전기 전력을 제공한다. 제1 전극, 제2 전극 및 절연체 중 하나는 플라즈마로부터의 광학 신호를 제공하는 포트를 포함한다.
실시예에서, 방법은 플라즈마 처리 시스템의 하나 이상의 내부 표면의 표면 컨디셔닝을 평가한다. 이 방법은 플라즈마 처리 시스템의 플라즈마 발생 공동 내에 하나 이상의 플라즈마 소스 가스를 도입하는 단계 - 플라즈마 발생 공동은 하나 이상의 내부 표면에 의해 적어도 부분적으로 경계가 정해짐 -; 및 플라즈마 발생 공동 내에서 플라즈마 소스 가스들로 플라즈마를 점화시키기 위해 플라즈마 처리 시스템의 전극들에 걸쳐 전력을 인가하는 단계를 포함한다. 플라즈마로부터의 광학 방출들이 광학 프로브로 캡쳐되고, 이 광학 프로브는 플라즈마 발생 공동에 인접하게 배치되며, 캡쳐된 광학 방출들이 워크피스와 플라즈마의 상호작용에 의해 영향을 받지 않도록 배향된다. 하나 이상의 내부 표면의 표면 컨디셔닝을 평가하기 위해 캡쳐된 광학 방출들의 하나 이상의 방출 피크가 모니터링된다.
실시예에서, 플라즈마 처리 시스템은 제1 소스 가스들을 이온화하기 위한 원격 플라즈마 시스템; 및 2개의 처리 유닛을 포함하고, 2개의 처리 유닛 각각은, 원격 처리 시스템으로부터의 이온화된 제1 소스 가스들 및 제2 소스 가스들을 적어도 수용하도록 구성된다. 처리 유닛들 각각은 플라즈마 발생 챔버를 포함하고, 플라즈마 발생 챔버는, 내부의 제1 천공들을 통해 플라즈마 발생 챔버 내로 이온화된 제1 소스 가스들 및 제2 플라즈마 소스 가스들을 이송하도록 구성되는 제1 평면 전극, 플라즈마 발생 공동으로부터 프로세스 챔버를 향하여 플라즈마 생성물들을 이송하도록 구성된 천공들을 갖도록 구성되는 제2 평면 전극, 및 제1 전극의 주변부 주위에서 제1 전극의 주변부와 접촉하여 배치되며, 제2 전극의 주변부 주위에서 제2 전극의 주변부와 접촉하여 배치되는 링 형상 절연체에 의해 경계가 정해진다. 처리 유닛들 각각은, 플라즈마 생성물들을 생성하기 위해 플라즈마 발생 공동에서 이온화된 제1 소스 가스들 및 제2 플라즈마 소스 가스들로 플라즈마를 점화시키도록 제1 평면 전극 및 제2 평면 전극에 걸쳐 전기 전력을 제공하는 전력 공급부를 더 포함한다. 제1 전극, 제2 전극 및 절연체 중 하나는 플라즈마로부터의 광학 신호를 제공하는 포트를 포함한다. 이 포트는, 플라즈마 생성물들이 제2 전극을 통해 프로세스 챔버를 향하여 이송된 이후에 광학 신호가 플라즈마 생성물들의 상호작용들에 의해 영향을 받지 않도록 배치 및 배향된다.
실시예에서, 플라즈마 소스의 내부 표면들을 컨디셔닝하는 방법은 내부 표면들에 의해 적어도 부분적으로 인클로징되는 플라즈마 소스의 플라즈마 발생 공동 내로 제1 소스 가스들을 유동시키는 단계를 포함한다. 플라즈마 발생 공동 내로 전력을 전송하면, 제1 소스 가스들은 점화되어 제1 플라즈마를 형성하고, 그에 의해 제1 플라즈마 생성물들을 생성하며, 그 부분들은 내부 표면들에 부착된다. 이 방법은, 플라즈마 발생 공동으로부터, 제1 플라즈마 생성물들에 의해 워크피스가 처리되는 프로세스 챔버를 향하여 제1 플라즈마 생성물들을 유동시키는 단계, 및 플라즈마 발생 공동 내로 제2 소스 가스들을 유동시키는 단계를 더 포함한다. 플라즈마 발생 공동 내로 전력을 전송하면, 제2 소스 가스들은 점화되어 제2 플라즈마를 형성하고, 그에 의해 제2 플라즈마 생성물들을 생성하며, 이 플라즈마 생성물들은 내부 표면들로부터 제1 플라즈마 생성물들의 부분들을 적어도 부분적으로 제거한다.
실시예에서, 플라즈마 소스의 하나 이상의 내부 표면이 대기에 노출된 이후에 이 내부 표면들을 컨디셔닝하는 방법은 적어도 수소 함유 가스를 플라즈마 소스의 플라즈마 발생 공동 내로 유동시키는 단계 - 플라즈마 발생 공동은 하나 이상의 내부 표면에 의해 적어도 부분적으로 인클로징됨 -; H 라디칼들이 내부 표면들로부터 과잉 산소를 제거하도록 수소 함유 플라즈마를 발생시키기 위해 플라즈마 발생 공동 내로 전력을 전송하는 단계; 및 방출 피크들이 안정적일 때까지 플라즈마의 방출 피크들을 모니터링하는 단계를 포함한다.
실시예에서, 웨이퍼들로부터 재료를 에칭하는 플라즈마 처리 시스템의 프로세스 속성의 안정성을 유지하는 방법은 에칭 플라즈마 생성물들을 생성하기 위해 플라즈마 처리 시스템 내에서 에칭 플라즈마를 발생시키는 단계 - 에칭 플라즈마 생성물들의 부분들은 플라즈마 처리 시스템의 하나 이상의 내부 표면에 부착됨 -; 에칭 플라즈마 생성물들을 이용하여 웨이퍼들 중 하나로부터 재료를 에칭하는 단계 - 하나 이상의 내부 표면에 부착된 에칭 플라즈마 생성물들의 부분들은 프로세스 속성에 영향을 미침 -; 및 컨디셔닝 플라즈마 생성물들(conditioning plasma products)을 생성하기 위해 플라즈마 처리 시스템 내에서 컨디셔닝 플라즈마를 발생시키는 단계 - 컨디셔닝 플라즈마 생성물들은 하나 이상의 내부 표면에 부착된 에칭 플라즈마 생성물들 중 적어도 일부를 제거함 - 를 포함한다.
본 개시내용은 아래에 간략하게 설명되는 도면들과 함께 취해진 다음의 상세한 설명을 참조하여 이해될 수 있고, 여기서 수개의 도면 전체에 걸쳐 유사한 참조 번호들은 유사한 컴포넌트들을 지칭하기 위해 이용된다. 예시의 명료성을 위해, 도면들에서의 특정 요소들은 비례에 맞춰 그려지지 않을 수 있다는 점에 유의한다. 소정 항목의 복수의 인스턴스가 제시되는 경우들에서, 예시의 명료성을 위해 이러한 인스턴스들 중 일부만이 라벨링될 수 있다.
도 1은 실시예에 따른, 플라즈마 처리 시스템의 주요 요소들을 개략적으로 예시한다.
도 2는 실시예에 따른, 플라즈마 처리 시스템의 주요 요소들을 단면도로 개략적으로 예시한다.
도 3은 도 2에 도시된 영역 A의 상세를 개략적으로 예시한다.
도 4는 실시예에 따른, 다양한 유형의 처리 동작들을 수행하도록 구성된 예시적인 플라즈마 처리 시스템의 상부 평면도를 개략적으로 예시한다.
도 5는 실시예에 따른, 탠덤 트레이를 갖는 처리 챔버들의 탠덤 쌍으로서 배치된 한 쌍의 처리 챔버를 개략적으로 예시한다.
도 6은 실시예에 따른, 플라즈마 처리 시스템의 하나 이상의 내부 표면의 표면 컨디셔닝을 평가하기 위한 방법을 예시하는 흐름도이다.
도 7a 및 도 7b는 실시예에 따른, 도 2 및 도 3에 도시된 것과 같은 장치로 도 6에 예시된 방법을 이용함으로써 획득된 방출 피크 정보를 예시한다.
도 8a 및 도 8b는 실시예에 따른, 수소 피크 및 불소 피크들에 대해, 시간이 지남에 따라, 플라즈마 챔버에서 측정된 방출 피크 세기들의 플롯들을 도시한다.
도 9는 실시예에 따른, 도 8a로부터의 수소 방출 피크들 중 선택된 수소 방출 피크들과, 선택된 수소 방출 피크들에 대응하는 시간들에서 취해진 에칭률 측정치들의 플롯이다.
도 10a는 실시예에 따른, 수소가 없는 이트리아 표면을 예시한다.
도 10b는 실시예에 따른, 도 10a의 이트리아 표면을 예시하는데, 여기서 몇몇 H 라디칼이 댕글링 본드들을 통해 이 표면에 부착되어 있다.
도 10c는 실시예에 따른, 도 10b의 이트리아 표면을 예시하는데, 여기서 F 라디칼들이 H 라디칼들의 일부와 반응하고 있다.
도 11은 실시예에 따른, 워크피스 상에서의 에칭과 컨디셔닝 단계를 교대로 행하는 에칭 레시피를 예시하는 흐름도이다.
도 12a는 실시예에 따른, 이트리아 표면을 예시하는데, 여기서 몇몇 F 원자가 댕글링 본드들을 통해 이 표면에 부착되어 있다.
도 12b는 실시예에 따른, 불소를 제거하기 위한 반응을 겪는 이트리아 표면을 예시한다.
도 13a는 실시예에 따른, 수분과 반응하여 고체 형태의 YO2 및 가스 형태로 제거되는(carried away) HF를 형성하는, 흡착된 불소를 갖는 이트리아 표면을 예시한다.
도 13b는 실시예에 따른, 도 13a의 이트리아 표면을 예시하는데, 여기서 고체 형태의 YO2의 산소 원자가 H 라디칼들과 반응하여, 증기 형태로 제거되는 H2O를 형성한다.
도 1은 실시예에 따른, 플라즈마 처리 시스템(100)의 주요 요소들을 개략적으로 예시한다. 시스템(100)은 단일 웨이퍼, 반도체 웨이퍼 플라즈마 처리 시스템으로서 도시되어 있지만, 본 명세서에서의 기술들 및 원리들은 임의의 유형의 플라즈마 발생 시스템들(예를 들어, 반드시 웨이퍼들 또는 반도체들을 처리하는 것은 아닌 시스템들)에 적용가능하다는 점이 본 기술분야의 통상의 기술자에게 명백할 것이다. 처리 시스템(100)은, 웨이퍼 인터페이스(115), 사용자 인터페이스(120), 플라즈마 처리 유닛(130), 제어기(140) 및 하나 이상의 전력 공급부(150)를 위한 하우징(110)을 포함한다. 처리 시스템(100)은 가스(들)(155), 외부 전력(170) 및 진공(160)을 포함할 수 있고, 선택적으로는 다른 것들을 포함할 수 있는 다양한 유틸리티들에 의해 지원된다. 처리 시스템(100) 내의 내부 배관(internal plumbing) 및 전기 접속들은 예시의 명료성을 위해 도시되지 않는다.
처리 시스템(100)은, 제1 위치에서 플라즈마를 발생시키고 처리가 발생하는 제2 위치에 플라즈마 및/또는 플라즈마 생성물들(예를 들어, 이온들, 분자 단편들(molecular fragments), 활성화된 종들(energized species) 등)을 지향시키는 소위 간접 또는 원격 플라즈마 처리 시스템으로서 도시되어 있다. 따라서, 도 1에서, 플라즈마 처리 유닛(130)은 프로세스 챔버(134)에 대해 플라즈마 및/또는 플라즈마 생성물들을 공급하는 원격 플라즈마 소스(132)를 포함한다. 프로세스 챔버(134)는 하나 이상의 웨이퍼 페디스털(135)을 포함하고, 웨이퍼 인터페이스(115)는 처리를 위해 워크피스(50)(예를 들어 반도체 웨이퍼이지만, 상이한 유형의 워크피스일 수 있음)를 이 웨이퍼 페디스털 위에 배치한다. 동작 시에, 가스(들)(155)가 플라즈마 소스(132) 내로 도입되고, 무선 주파수 발생기(RF Gen)(165)가 플라즈마 소스(132) 내의 플라즈마를 점화시키기 위해 전력을 공급한다. 플라즈마 및/또는 플라즈마 생성물들은 플라즈마 소스(132)로부터 확산기 판(137)을 통해 프로세스 챔버(134)로 전달되고, 이 프로세스 챔버에서 워크피스(50)가 처리된다.
도 1 및 본 개시내용의 다른 곳에서는 간접 플라즈마 처리 시스템이 예시되어 있지만, 본 명세서에 개시된 기술들, 장치들 및 방법들은 예를 들어 플라즈마가 워크피스(들)의 위치에서 점화되는 직접 플라즈마 처리 시스템들에 동등하게 적용가능하다는 점이 본 기술분야의 통상의 기술자에게 명확해야 한다. 유사하게, 실시예들에서, 처리 시스템(100)의 컴포넌트들은, 예를 들어 (1) 복수의 프로세스 챔버를 갖는 단일 처리 시스템을 제공하고; (2) 단일 프로세스 챔버에 대해 복수의 원격 플라즈마 소스를 제공하고; (3) 단일 프로세스 챔버 내에 복수의 워크피스 고정구(workpiece fixtures)(예를 들어, 웨이퍼 페디스털들(135))를 제공하고; (4) 플라즈마 생성물들을 복수의 프로세스 챔버에 공급하기 위해 단일 원격 플라즈마 소스를 이용하고; 그리고/또는 (5) 다양한 소스 가스들이 0회, 1회, 2회 또는 그 이상 이온화되고, 프로세스 챔버에 진입하기 이전에 또는 프로세스 챔버에 진입한 이후에 다른 소스 가스들과 혼합될 수 있도록, 플라즈마 및 가스 소스들을 직렬/병렬 조합으로 제공하거나 하기 위해 재조직화, 재분배 및/또는 복제될 수 있다.
OES를 이용한 플라즈마 단독 모니터링(plasma-only monitoring)
도 2는 실시예에 따른, 플라즈마 처리 시스템(200)의 주요 요소들을 단면도로 개략적으로 예시한다. 플라즈마 처리 시스템(200)은 도 1의 플라즈마 처리 유닛(130)의 예이다. 플라즈마 처리 시스템(200)은 프로세스 챔버(205) 및 플라즈마 소스(210)를 포함한다. 도 2에 도시된 바와 같이, 플라즈마 소스(210)는, RF 전극(215)을 통해, 플라즈마 소스 가스들(212)로서, 업스트림 원격 플라즈마 소스(202)에 의해 이온화되는 가스들(155(2)) 및/또는 직접적으로 가스들(155(1))을 도입한다. RF 전극(215)은, 화살표들(231)에 의해 표시된 바와 같이, 가스 유동이 플라즈마 소스(210)에 걸쳐 균일하도록 소스 가스들의 유동을 재지향시키는 역할을 하는 제1 가스 확산기(220)와 면판(faceplate)(225)을 포함한다(예를 들어, 제1 가스 확신기(220)와 면판(225)에 전기적으로 결속된다). 면판(225)을 통해 유동한 이후에, 절연체(230)는 전기 접지로 유지되는 확산기(235)로부터 RF 전극(215)을 전기적으로 절연시킨다(예를 들어, 확산기(235)는 RF 전극(215)의 면판(225)에 대향(counterfacing)하는 제2 전극의 역할을 한다). RF 전극(215), 확산기(235) 및 절연체(230)의 표면들은 플라즈마 발생 공동(도 3의 플라즈마 발생 공동(240) 참조)을 정의하고, 이 플라즈마 발생 공동에서, 소스 가스들이 존재하고 RF 에너지가 RF 전극(215)을 통해 제공될 때 플라즈마(245)가 생성된다. RF 전극(215) 및 확산기(235)는 임의의 전도체로 형성될 수 있고, 실시예들에서는 알루미늄(또는 알려진 "6061" 합금 유형과 같은 알루미늄 합금)으로 형성된다. 플라즈마 공동을 향하거나 반응성 가스들에 다르게 노출되는 면판(225) 및 확산기(235)의 표면들은 플라즈마 공동에서 발생되는 플라즈마 생성물들 및 반응성 가스들에 대한 저항성을 위해 이트리아(Y2O3) 또는 알루미나(Al2O3)로 코팅될 수 있다. 절연체(230)는 임의의 절연체일 수 있고, 실시예들에서는 세라믹으로 형성된다. 도 2에서 A로서 표시된 영역이 도 3에 더 상세하게 도시되어 있다. 플라즈마(245)로부터의 방출들은 광섬유(270)에 진입하고, 아래에 추가로 논의되는 바와 같이, 광학 방출 분광계(optical emission spectrometer)("OES")(280)에서 분석된다.
플라즈마(245)에서 발생된 플라즈마 생성물들은, 플라즈마 생성물들의 균일한 분배를 촉진하는 것을 역시 돕고 전자 온도 제어에 도움을 줄 수 있는 확산기(235)를 통과한다. 확산기(235)를 통과하면, 플라즈마 생성물들은 작은 화살표들(227)에 의해 표시된 바와 같이 균일성을 촉진하는 추가 확산기(260)를 통과하고, 프로세스 챔버(205)에 진입하며, 이 프로세스 챔버에서 플라즈마 생성물들은 웨이퍼 페디스털(135)의 정상에 있는 반도체 웨이퍼와 같은 워크피스(50)와 상호작용한다. 확산기(260)는, 매우 작은 화살표들(229)에 의해 표시된 바와 같이, 플라즈마 생성물들이 프로세스 챔버(205)에 진입할 때 이 플라즈마 생성물들에 하나 이상의 추가 가스(155(3))를 도입하기 위해 이용될 수 있는 추가 가스 채널들(250)을 포함한다.
본 명세서의 실시예들은 재배열될 수 있고, 다양한 형상들을 형성할 수 있다. 예를 들어, 워크피스(50)로서 원형 반도체 웨이퍼를 처리하는 응용을 위해, 절연체(230)는 면판(225) 및 확산기(235)의 주변 영역들에 대하여 배치되는 상부 및 하부 평면 표면을 갖는 링이고, RF 전극(215) 및 확산기(235)는 도 2에 도시된 실시예에서 실질적으로 방사상 대칭이다. 그러나, 이러한 피쳐들은 플라즈마 소스로서의 이용에 일관되는 임의의 형상을 가질 수 있다. 또한, 확산기들, 면판들 등과 같이, 가스들 및/또는 플라즈마 생성물들을 도입하고 분배하기 위한 피쳐들의 정확한 개수 및 배치가 또한 달라질 수 있다. 또한, 플라즈마(245)로부터의 플라즈마 생성물들이 프로세스 챔버(205)에 진입할 때 이 플라즈마 생성물들에 가스(155(3))를 추가하기 위한 가스 채널들(250)을 포함하는 확산기(260)와 유사한 방식으로, 플라즈마 처리 시스템(200)의 다른 컴포넌트들은 가스들(155)이 시스템을 통해 프로세스 챔버(205)로 나아갈 때 이 가스들에 다른 가스들 및/또는 플라즈마 생성물들을 추가하거나 혼합하도록 구성될 수 있다.
도 3은 도 2에 도시된 영역 A의 상세를 개략적으로 예시한다. 면판(225), 절연체(230) 및 확산기(235)는, 면판(225), 절연체(230) 및 확산기(235)에 의해 경계가 정해지는 플라즈마 발생 공동(240)이 배기될 수 있도록 서로에 대해 밀봉된다. 면판(225)의 대향 표면(facing surface)(226) 및/또는 확산기(235)의 대향 표면(236)은 이용될 가스들 및/또는 플라즈마들에 대한 저항성을 위해 이트리아(Y2O3) 또는 알루미나(Al2O3)로 코팅될 수 있다.
플라즈마 소스 가스들이 도입되고, 면판(225) 및 확산기(235)에 걸쳐 전기 전력이 제공될 때, 플라즈마(245)가 내부에 형성될 수 있다. 절연체(230)는 방사상 애퍼쳐(radial aperture)(237)를 형성하고; 광학 윈도우(310)가 애퍼쳐(237) 위에서 절연체(230)에 대해 밀봉한다. 광학 윈도우(310)는 사파이어로 형성되지만, 아래에 논의되는 바와 같이, 플라즈마 소스 가스들 및/또는 플라즈마(245)의 플라즈마 생성물들에 대한 저항성, 또는 광학 방출들에 대한 투과율에 기초하여, 광학 윈도우(310)를 위한 다른 재료들이 선택될 수 있다고 인식된다. 도 3에 도시된 실시예에서, 절연체(230)에 대한 광학 윈도우(310)의 밀봉을 용이하게 하기 위해 리세스들(345)에 o-링(340)이 놓여지지만; 다른 밀봉 기하형상들 및 방법들이 이용될 수 있다. 실시예들에서, 플라즈마 발생 공동(240)은 (플라즈마 발생 공동(240) 외부의) 대기압이 광학 윈도우(310)와 같은 컴포넌트들을 절연체(230)에 대해 밀봉하는 데에 도움을 주도록 배기된다.
광섬유(270)는, 플라즈마 발생 공동(240)에 플라즈마(245)가 존재할 때, 광학 방출들(350)이 플라즈마(245)에서 유래되고, 방사상 애퍼쳐(237) 및 광학 윈도우(310)를 통해 광섬유(270) 내로 전파되어, 내부에서 광학 신호를 발생시키도록 위치된다. 광섬유(270)는 도 2의 OES(280)에 광학 방출들(350)을 전송한다. 실시예들에서, 광섬유(270)는 400㎛ 코어 광섬유이지만; 광학 방출들(350)의 투과율을 위해 그리고 광섬유(270) 내에서의 신호 강도를 관리하기 위해, 다른 코어 크기들 및 다양한 섬유 재료들이 선택될 수 있다. 예를 들어, 낮은 레벨의 광학 방출들(350)을 발생시키는 플라즈마(245)는 상대적으로 넓은 코어(예를 들어, 400㎛)의 광섬유(270)를 이용하여 모니터링될 수 있는 한편, 더 높은 레벨의 광학 방출들(350)을 발생시키는 플라즈마는 OES(280)에 도달하는 광학 신호를 제한하기 위해 상대적으로 더 좁은 코어들(예를 들어, 110㎛, 100㎛, 62.5㎛, 50㎛, 9㎛ 또는 다른 코어 크기들)을 이용하여 모니터링될 수 있다. 관심있는 스펙트럼 대역 내에 있지 않은 방출들 및/또는 미광을 흡수하기 위해 하나 이상의 필터가 OES(280)에서 이용될 수 있다.
OES(280)는, 특정 요소들의 에너지 전이들(energy transitions)에 대응하는 것으로서 특정 방출 피크들을 식별하는 것을 포함하여, 신호 내의 방출 피크들을 식별하기 위해 광섬유(270)로부터 수신된 광학 신호를 분석한다. 일부 실시예들에서, 내부의 방출 피크들을 특성화(characterizing)하는 정보 및/또는 스펙트럼은 OES(280) 상에서 보여지고/지거나 조작될 수 있다. 이러한 실시예들 중 일부에서 그리고 다른 실시예들에서, 방출 피크 정보는 분석, 조작, 저장 및/또는 디스플레이를 위해 컴퓨터(290)로 전송될 수 있다.
실시예들에서, 도 3에 도시된 바와 같이, 광섬유 커넥터(330)가 광섬유(270)를 종단시키고, 블록(320)이 광섬유 커넥터(330)를 광학 윈도우(310)에 대하여 위치시킨다. 그러나, 이러한 배열은 예일 뿐이고; 다른 실시예들은 커넥터(330)를 수반하지 않는 광섬유(270)의 커스텀 종단(custom termination)을 제공할 수 있고, 광섬유(270) 및/또는 커넥터(330)를 윈도우(310)에 대하여 위치시키기 위한 다양한 배열들이 블록(320)을 대신하여 구현될 수 있다. 이용될 때, 블록(320)은 도 3에 도시된 단면 평면 안팎으로 연장되어 부착 영역들을 형성할 수 있고, 이러한 영역들에서 스크류들과 같은 체결구들을 이용하여 절연체(230)에 체결될 수 있다. 블록(320)을 절연체(230)에 부착하는 스크류들 및/또는 블록(320)은, 면판(225)과 확산기(235) 및/또는 다른 구조물들로의/로부터의 전기 아킹의 임의의 가능성을 완화하기 위해 유리하게는 플라스틱 또는 세라믹과 같은 절연성 재료들로 제조된다.
애퍼쳐(237) 및 광학 윈도우(310)는 적어도 플라즈마 소스(210)의 양태들을 모니터링하기 위해 이용될 수 있는 플라즈마(245)로부터의 광학 신호를 제공하기 위한 포트로서 기능한다고 인식된다. 이러한 포트는 플라즈마 소스 내의 다양한 위치들에서 제공될 수 있다고 또한 인식된다. 예를 들어, 일반적으로 말하면, 용량 결합된 플라즈마 소스(capacitively coupled plasma source)는 절연체에 의해 분리되는 적어도 2개의 전극을 포함할 것이고; 위에서 설명된 것과 같은 포트는 절연체 또는 전극들 중 임의의 것과 함께 배치될 수 있다. 유사하게, 유도 결합된 플라즈마 소스(또는 임의의 다른 유형의 플라즈마 소스)는 플라즈마가 초기에 발생되는 임의의 용기와 함께 배치된 포트를 포함할 수 있다. 이러한 포트들의 재료들 및/또는 위치들은 플라즈마 소스에 중요한 전기 또는 자기 회로들을 파괴하지 않도록(예를 들어, 유도 결합된 플라즈마 소스들에 대해, 자기장 분포들의 교란 및/또는 아킹을 완화하도록) 선택되어야 한다.
도 2로 되돌아가면, 원격 플라즈마 소스에서 플라즈마가 발생되는 장소에서의 플라즈마의 광학 모니터링은 고유한 이점들을 제공한다. 플라즈마(245)는 플라즈마와 워크피스(50)(예를 들어, 웨이퍼)의 상호작용의 업스트림에서 모니터링되기 때문에, 이 모니터링은 플라즈마 소스의 특성화만을 제공하고, 이것은 워크피스와의 상호작용에 의해 생성되는 효과들과 상관되거나 대조될 수 있다. 즉, 절연체(230) 및 방사상 애퍼쳐(237)의 기하형상은, 다운스트림 상호작용들로부터 기인하는 방출들 및/또는 프로세스 챔버 내의 표면들의 직접적인 뷰들보다는, 플라즈마(245)로부터 기인하는 광학 방출들, 및 그러한 방출들과 인접 표면들의 상호작용들로 제한되는 유효 "뷰(view)"를 갖는 광섬유(270)를 제공하는 경향이 있을 것이다. 플라즈마가 워크피스와 상호작용할 기회를 아직 갖지 않은 위치에서의 플라즈마의 모니터링은 본 명세서에서 "업스트림" 플라즈마 모니터링이라고 지칭된다.
대조적으로, 워크피스들 자체의 광학 모니터링 및/또는 이러한 워크피스들과의 플라즈마 상호작용은 워크피스에 대한 특정 플라즈마 효과들을 모니터링하기 위해 이용될 수 있지만, 워크피스에 의해 영향을 받기 쉽다. 광학 프로브들로 캡쳐되는 광학 방출들을 포함하여, 워크피스의 영향을 받는 플라즈마 특성들(workpiece-affected plasma characteristics)은 때로는 플라즈마 처리 종료점을 결정하기 위해, 즉 플라즈마 프로세스의 소정의 양태가 턴 오프될 수 있도록 처리가 본질적으로 완료되는 시간을 식별하기 위해 이용된다. 예를 들어, 워크피스와의 상호작용은 워크피스로부터 반응 생성물들을 방출함으로써 플라즈마에 영향을 미칠 수 있고/있거나, 워크피스는 플라즈마로부터의 반응성 종들(reactive species)을 고갈시킬 수 있다. 워크피스로부터의 반응 생성물들이 더 이상 검출되지 않을 때, 이는 에칭 가스들 및/또는 RF 에너지가 턴 오프될 수 있도록, 에칭될 층이 "클리어(cleared)"되었다는 것을 나타낼 수 있다. 그러나, 이러한 광학 프로브들은 캡쳐되는 광학 방출들이 워크피스에 의해 영향을 받는 곳에 위치된다.
워크피스의 영향을 받는 플라즈마와 업스트림 플라즈마의 모니터링 둘 다는, 처리되는 워크피스들에서의 편차들이 발생된 바와 같은 플라즈마에서의 편차들로 인한 것인지, 또는 워크피스들이 플라즈마와 상호작용하기 이전에 워크피스들에서 존재하는 편차들로 인한 것인지를 결정하는 데에 유용한 툴들일 수 있다. 본 명세서의 특정 실시예들에서, 안정적인 프로세스 결과들은 업스트림 플라즈마 모니터링 결과들과 강하게 상관된다. 구체적으로, 프로세스 결과들은 도 2 및 도 3과 관련하여 설명된 장치로 측정된 특정 방출 피크들과 상관되는 것으로 밝혀졌다. 플라즈마 방출 피크들의 업스트림 모니터링과 프로세스 결과들 간의 강한 상관이 식별될 수 있을 때, 실시예들에서는, 그러한 방출 피크들이 안정적인 것으로 관측될 때까지 가치있는 워크피스들을 위험에 노출시키지 않고서 컨디셔닝 프로세스 사이클들을 실행하는 것이 가능해진다. 일단 방출 피크들이 안정적이면, 워크피스들은 프로세스 결과들이 예상대로 일 것이라는 신뢰 하에서 처리될 수 있다.
업스트림 모니터링으로부터 획득된 방출 피크들에서의 안정성은 발생된 플라즈마와 인접 표면들 간의 반응들에서의 평형을 표시할 수 있다. 예를 들어, 전극들, 확산기들 등의 특정 표면들은 플라즈마와 상호작용하여, 프로세스 결과들에 중요한 특정 요소들을 천천히 방출하거나 흡수할 수 있고, 그에 의해 표면들이 플라즈마와 평형을 이룰 때까지 결과적인 플라즈마 프로세스는 안정적이지 않을 것이다. 실시예들에서, 전극들, 확산기들 등은 이용될 가스들 및/또는 플라즈마들에 대한 저항성을 위해 이트리아(Y2O3) 또는 알루미나(Al2O3)와 같은 내화 재료들로 코팅될 수 있다. 이러한 재료들은 자유 수소와 같은 플라즈마 생성물들과 상호작용할 수 있고, 그에 의해 표면들이 포화되거나 수소가 실질적으로 고갈될 때까지, 이러한 표면들 주위에서 발생되는 플라즈마들은 안정적이지 않을 수 있다. 어느 경우에도, 업스트림 플라즈마 모니터링을 통해 발생되는 방출 피크들은 플라즈마 안정성을 평가하는 데에 유용할 수 있다.
반도체 산업에서는 플라즈마 장비가 안정적인 프로세스를 실행하고 있을 때를 정확하게 식별하는 것이 가치있다. 반도체 처리는, 고비용을 갖는 유용하지 않은 장비, 및 처리가 최적이지 않은 경우에 위험에 처하는 높은 가치를 갖는 워크피스들 둘 다에 의해 특징지어진다. 예를 들어, 단일 플라즈마 처리 시스템은 수십만 또는 수백만 달러의 자본 투자에 상당할 수 있고, 수백만 달러의 웨이퍼 제조 영역의 생산량은 이러한 시스템들 중 몇 개에만 종속한다. 그러나, 단일 반도체 웨이퍼는 수백 또는 수천 달러의 투자된 처리 비용을 축적할 수 있고, 하나의 플라즈마 장비는 시간당 수십개의 이러한 웨이퍼들을 처리할 수 있다. 따라서, 장비 다운타임의 재정 비용 또는 올바르게 동작하고 있지 않은 장비를 이용하는 것의 재정 비용은 둘 다 상당히 높다.
도 4는 다양한 유형의 처리 동작들을 수행하도록 구성된 예시적인 플라즈마 처리 시스템(400A)의 상부 평면도를 개략적으로 예시한다. 도 4에서, 한 쌍의 전방 개구 통합 포드(front opening unified pods)("FOUP") 또는 홀딩 챔버들(402)은 다양한 크기의 워크피스들(예를 들어, 반도체 웨이퍼들)을 공급하고, 이 워크피스들은 로봇식 암들(404)에 의해 수용되고, 탠덤 트레이들(409a-409c) 상에 위치된 워크피스 처리 챔버들(408a-408f) 중 하나 내로 배치되기 이전에 저압 로딩 챔버들(406) 내로 배치된다. 대안적인 배열들에서, 시스템(400A)은 추가적인 FOUP들을 가질 수 있고, 예를 들어 3개, 4개, 5개, 6개 등 또는 더 많은 FOUP를 가질 수 있다. 프로세스 챔버들은 본 개시내용의 다른 곳에 설명된 바와 같은 챔버들 중 임의의 것을 포함할 수 있다. 로봇식 암들(411)은, 워크피스들을 로딩 챔버들(406)로부터 이송 챔버(410)를 통해 워크피스 처리 챔버들(408a-408f)로 이송하고 그리고 반대로 이송하기 위해 이용될 수 있다. 2개의 로딩 챔버(406)가 예시되어 있지만, 시스템은 처리를 위해 워크피스들을 진공 환경 내로 수용하도록 각각 구성되는 복수의 로딩 챔버를 포함할 수 있다. 프로세스 챔버들(408) 및 이송 챔버(410)는, 예컨대 불활성 분위기(inert atmosphere)를 유지하기 위해 챔버들 각각을 통해 연속적으로 유동될 수 있는 질소 퍼징(nitrogen purging)을 이용하여 불활성 환경에 유지될 수 있다. 로딩 챔버(406)는 워크피스를 유사한 환경의 프로세스 섹션들에 제공하기 위해 워크피스를 수용한 이후에 질소로 퍼징되도록 유사하게 구성될 수 있다.
각각의 워크피스 처리 챔버(408a-408f)는 건식 에칭 프로세스들, CLD(cyclical layer deposition), 원자 층 퇴적(ALD), 화학 기상 증착(CVD), 물리 기상 증착(PVD), 에칭, 사전 세정(pre-clean), 탈가스(degas), 배향(orientation) 및 다른 워크피스 프로세스들을 포함하는 하나 이상의 워크피스 처리 동작을 수행하도록 준비될 수 있다. 개시된 실시예에서, 예를 들어, 시스템은 적어도 2쌍의 탠덤 처리 챔버를 포함할 수 있다. 적어도 2쌍의 탠덤 처리 챔버 중 제1 쌍의 탠덤 처리 챔버는 실리콘 산화물 에칭 동작을 수행하도록 구성될 수 있고, 적어도 2쌍의 탠덤 처리 챔버 중 제2 쌍의 탠덤 처리 챔버는 실리콘 또는 실리콘 질화물 에칭 동작을 수행하도록 구성될 수 있다. 주어진 쌍의 처리 챔버들(408) 둘 다가 특정 프로세스 단계를 위해 구성될 수 있고, 이 쌍의 챔버들 중 각각에 의해 제공되는 처리가 서로 근접하게 매칭되는 것을 보장하기 위해 본 명세서에 설명된 방법들을 이용하여 모니터링될 수 있다. 쌍들로 구성될 때, 각각의 처리 챔버(408)는 가스 공급부들, RF 발생기들, 원격 플라즈마 발생기들 등과 같은 지원 장비와 독립적으로 결합될 수 있지만, 실시예들에서, 인접 처리 챔버들(408)은 특정의 이러한 지원 장비와의 연결들을 공유한다.
워크피스 처리 챔버들(408a-408f)은 워크피스 상에서 막을 퇴적, 어닐링, 경화 및/또는 에칭하기 위한 하나 이상의 시스템 컴포넌트를 포함할 수 있다. 하나의 구성에서, 2쌍의 처리 챔버(예를 들어, 408c와 408d 및 408e와 408f)는 워크피스 상에서 제1 에칭 동작을 수행하기 위해 이용될 수 있고, 제3 쌍의 처리 챔버(예를 들어, 408a와 408b)는 워크피스 상에서 제2 에칭 동작을 수행하기 위해 이용될 수 있다. 다른 구성에서, 3쌍의 챔버들 전부(예를 들어, 408a-408f)가 워크피스 상의 유전체 막을 에칭하도록 구성될 수 있다. 또 다른 구성에서, 제1 쌍의 처리 챔버(예를 들어, 408a와 408b)는 유동성 막(flowable film), 천연 산화물(native oxide) 또는 추가적인 재료들을 퇴적하는 것과 같은 퇴적 동작을 수행할 수 있다. 제2 쌍의 처리 챔버(예를 들어, 408c와 408d)는 제1 에칭 동작을 수행할 수 있고, 제3 쌍의 처리 챔버(예를 들어, 408e와 408f)는 제2 에칭 동작을 수행할 수 있다. 설명된 프로세스들 중 임의의 하나 이상은 대안적으로 상이한 실시예들에서 제시된 제조 시스템으로부터 분리된 챔버들에서 수행될 수 있다. 막들을 위한 퇴적, 에칭, 어닐링 및 경화 챔버들의 추가적인 구성들이 시스템(400A)에 의해 고려된다는 점이 인식될 것이다.
본 명세서의 처리 챔버들은, 워크피스의 표면 상에 다양한 디바이스 피쳐들을 형성하기 위해 PVD, CVD(예를 들어, 유전체 CVD, MCVD, MOCVD, EPI), ALD, DPN(decoupled plasma nitridation), 급속 열 처리(RTP) 또는 건식 에칭 프로세스와 같은 임의의 개수의 프로세스들을 수행할 수 있다. 다양한 디바이스 피쳐들은 층간 유전체 층들, 게이트 유전체 층들, 다결정질 실리콘("폴리실리콘") 층들 또는 게이트들의 형성 및/또는 에칭, 비아들 및 트렌치들의 형성, 평탄화 단계들, 및 콘택 또는 비아 레벨 인터커넥트들의 퇴적을 포함할 수 있지만, 이에 제한되지는 않는다. 일 실시예에서, 특정 위치들은 탈가스, 배향, 냉각, 분석 등을 위해 적응되는 서비스 챔버들에 의해 점유될 수 있다. 예를 들어, 하나의 챔버는, 처리 시퀀스에서 처리 단계를 수행하기 이전에 또는 수행한 이후에 워크피스의 속성을 분석하기 위한 준비/분석 단계 및/또는 사후처리/분석 단계를 수행하도록 적응되는 계측 챔버를 포함할 수 있다. 일반적으로, 계측 챔버에서 측정될 수 있는 워크피스의 속성들은 워크피스의 표면 상에 퇴적된 하나 이상의 층에서의 내인성(intrinsic) 또는 외인성(extrinsic) 응력의 측정치, 하나 이상의 퇴적된 층의 막 조성, 워크피스의 표면 상의 입자들의 수, 및/또는 워크피스의 표면 상에서 발견되는 하나 이상의 층의 두께를 포함할 수 있지만, 이에 제한되지는 않는다. 다음에, 계측 챔버로부터 수집된 데이터는, 후속하여 처리되는 워크피스들에 대해 유리한 프로세스 결과들을 생성하도록 처리 단계들 중 하나 이상에서 하나 이상의 프로세스 변수를 조정하기 위해 시스템 제어기에 의해 이용될 수 있다.
시스템(400A)은 인터페이스 섹션(403)의 대향 측면들 상에 추가적인 챔버들(405, 407)을 포함할 수 있다. 인터페이스 섹션(403)은 FOUP들(402)과 복수의 로딩 챔버(406) 사이에서 워크피스들을 전달하도록 구성되는 적어도 2개의 인터페이스 이송 디바이스, 예컨대 로봇 암들(404)을 포함할 수 있다. 홀딩 챔버들(402)은 인터페이스 섹션의 제1 위치에서 인터페이스 섹션(403)과 결합될 수 있고, 로딩 챔버들은 복수의 홀딩 챔버(402)에 대향하는 인터페이스 섹션(403)의 제2 위치에서 인터페이스 섹션(403)과 결합될 수 있다. 추가적인 챔버들은 인터페이스 로봇 암들(404)에 의해 액세스될 수 있고, 인터페이스 섹션(403)을 통해 워크피스들을 이송하도록 구성될 수 있다. 예를 들어, 챔버(405)는 예를 들어 습식 에칭 능력들을 제공할 수 있고, 인터페이스 섹션(403)의 측면을 통하여 인터페이스 로봇 암(404a)에 의해 액세스될 수 있다. 습식 스테이션은 인터페이스 섹션의 제1 위치와 제2 위치 사이에 있는 인터페이스 섹션(403)의 제3 위치에서 인터페이스 섹션(403)과 결합될 수 있다. 개시된 실시예들에서, 제3 위치는 인터페이스 섹션(403)의 제1 위치와 제2 위치 중 어느 하나에 인접할 수 있다. 추가적으로, 챔버(407)는 예를 들어 추가적인 저장소를 제공할 수 있고, 인터페이스 섹션(403)에 있어서 챔버(405)로부터의 대향 측면을 통하여 인터페이스 로봇 암(404b)에 의해 액세스될 수 있다. 챔버(407)는 제3 위치에 대향하는 인터페이스 섹션의 제4 위치에서 인터페이스 섹션(403)과 결합될 수 있다. 인터페이스 섹션(403)은, 로봇 암들(404) 사이에 위치된 이송 섹션(412)을 포함하여, 로봇 암들(404) 사이에서의 워크피스들의 이송을 허용하기 위한 추가적인 구조물들을 포함할 수 있다. 이송 섹션(412)은 하나 이상의 워크피스를 유지하도록 구성될 수 있고, 처리를 위해 임의의 주어진 전달 시간에 2개, 5개, 10개, 15개, 20개, 25개, 50개, 100개 등 또는 더 많은 워크피스들을 유지하도록 구성될 수 있다. 이송 섹션(412)은, 예를 들어 웨이퍼들의 대기 세정(atmospheric cleaning)뿐만 아니라, 대기 조건들 아래로의 워크피스들의 냉각을 포함하는 추가적인 능력들을 포함할 수 있다. 시스템(400A)은 다양한 처리 동작들을 수행하기 위한 명령어들 및 프리커서들을 제공하기 위한 시스템 제어기들 및 가스 전달 시스템들(도시되지 않음)을 추가적으로 포함할 수 있다.
도 5는 탠덤 트레이(409)를 갖는 처리 챔버들의 탠덤 쌍으로서 배치된 한 쌍의 처리 챔버(408g 및 408h)를 예시하는 개략적인 측면도이다. 각각의 처리 챔버(408g, 408h)는 도 2 및 도 3에 도시된 피쳐들에 대하여 단순화된 형태로 도시되어 있지만, 동일한 컴포넌트들을 포함하는 것으로 이해되어야 한다. 처리 챔버들(408g, 408h) 둘 다에 대해 동일한 컴포넌트들은 RF 전극(215), 절연체(230) 및 확산기(260)를 포함한다. 도 5에 도시된 실시예에서, 원격 플라즈마 소스(RPS)(202)는 처리 챔버들(408g, 408h) 둘 다에 대한 공유 자원이다. RPS(202)는 입력 프로세스 가스(들)(155(2))를 수용하고; 도시된 바와 같이, 추가 입력 프로세스 가스(들)(155(1))가 RPS(202)로부터의 플라즈마 생성물들과 혼합되어, 처리 챔버들(408g 및 408h)에 제공될 수 있다. 처리 챔버들(408g 및 408h)은 추가 프로세스 가스(들)(155(3) 및 155(4))를 수용할 수 있고, RF 전력 공급부들(510(1) 및 510(2))에 의해 각각 에너지 공급될 수 있다. 가스들(155(3) 및 155(4)) 및 RF 전력 공급부들(510(1) 및 510(2))은 처리 챔버들(408g 및 408h)에 대해 독립적으로 제어가능하다. 즉, 가스 연결부들을 통해 상이한 가스(들) 및 유량들을 제공하고/하거나, 한 번에 RF 전력 공급부들(510(1) 및 510(2)) 중 하나를 동작시키거나, 또는 전력 공급부들(510(1) 및 510(2))을 상이한 전력 레벨들로 동작시키는 것이 가능하다. 아래에 추가로 논의되는 바와 같이, 가스들(155(3) 및 155(4)) 및 RF 전력 공급부들(510(1) 및 510(2))을 독립적으로 제어하는 능력은 처리 및 챔버 컨디셔닝 목적을 위해 중요한 특징이다.
도 6은 플라즈마 처리 시스템의 하나 이상의 내부 표면의 표면 컨디셔닝을 평가하기 위한 방법(600)을 예시하는 흐름도이다. 방법(600)은, 플라즈마 시스템의 플라즈마 발생 공동 내에 하나 이상의 플라즈마 소스 가스를 도입하는 단계(610)로 시작한다. 이 공동은 내부 표면들에 의해 적어도 부분적으로 경계가 정해진다. 예를 들어, 도 2의 플라즈마 처리 시스템(200)의 확산기(235) 및 면판(225)(RF 전극(215)의 일부)의 표면들의 표면 컨디셔닝이 평가될 수 있다. 이 경우, 도 2 및 도 3에 도시된 바와 같이, 플라즈마 발생 공동(240)은 내부 표면들(226 및 236)(도 3에서만 라벨링됨)에 의해 적어도 부분적으로 경계가 정해진다. 도 2에 도시된 바와 같이, 플라즈마 소스 가스들(212)이 도입될 수 있다. 방법(600)은, 플라즈마 발생 공동 내에서 플라즈마 소스 가스들로 플라즈마를 점화시키기 위해 플라즈마 장치의 전극들에 걸쳐 전력을 인가하는 단계(620)로 진행한다. 예를 들어, 도 2 및 도 3에 도시된 바와 같이, RF 전력이 RF 전극(215)(면판(225)을 포함함) 및 확산기(235)에 걸쳐 제공되어, 플라즈마 발생 공동(240) 내에서 플라즈마(245)를 점화시킬 수 있다. 방법(600)은, 플라즈마 발생 공동에 인접하게 배치되는 광학 프로브로 플라즈마로부터의 광학 방출들을 캡쳐하는 단계(630)로 추가로 진행한다. 광학 프로브는, 캡쳐된 광학 방출들이 워크피스와 플라즈마의 상호작용에 의해 영향을 받지 않도록 배향된다. 광학 방출들을 캡쳐하는 예는 광학 방출들(350)을 광학 윈도우(310)를 통해 도 3의 광섬유(270) 내로 수용하는 것이다. 방법(600)은, 하나 이상의 내부 표면의 컨디셔닝을 평가하기 위해 캡쳐된 광학 방출들의 하나 이상의 방출 피크를 모니터링하는 단계(640)로 추가로 진행한다. 캡쳐된 광학 방출들의 하나 이상의 방출 피크를 모니터링하는 예는, 도 2의 광학 방출 분광계(280)가 방출 피크들을 식별하기 위해 광섬유(270) 내로 캡쳐된 광학 신호를 분석하고, 방출 피크들의 정보를 이용하여 표면들의 컨디셔닝을 평가하는 것이다.
실시예들에서, 방출 피크 정보는 인간에 의해 평가될 수 있다. 대안적으로, OES(280) 및/또는 컴퓨터(290)가 이 정보로부터 안정성 메트릭들을 발생시킬 수 있다. 예를 들어, 프로세스 시퀀스(이하, 프로세스 시퀀스에 의해 수행되는 처리에 종속하여, "에칭 레시피", "퇴적 레시피", "컨디셔닝 레시피" 또는 다른 유형들일 수 있는 "레시피"라고 지칭됨)는, OES(280)가 광학 방출들을 측정하고 방출 피크들에 대한 정보를 생성하는 단계를 포함할 수 있다. 정보는 어느 피크들(예를 들어, 스펙트럼 파장들 또는 파장 대역들)이 검출되는지, 및/또는 하나 이상의 검출된 방출 피크의 세기를 포함할 수 있다. 정보는 레시피 사이클들에 걸친 방출 피크 세기의 변화들과 같은 경향들을 평가함으로써, 또는 레시피 사이클들의 그룹들에 걸친 평균, 중앙값, 표준 편차 등의 계산과 같은 통계들에 의해 추가로 처리될 수 있다.
도 7a 및 도 7b는 폴리실리콘 에칭 프로세스를 위해 발생된 플라즈마에 대해, 도 2 및 도 3에 도시된 것과 같은 장치로 방법(600)을 이용함으로써 획득된 방출 피크 정보를 예시한다. 플라즈마의 광학 방출들은 알려진 방출 피크들을 자동으로 식별하는 OES(280)를 이용하여 측정되고 디스플레이되었다. 도 7a 및 도 7b에 도시된 예들에서, He, N2, H 및 F에 대응하는 피크들이 라벨링되어 있다. 도 7a 및 도 7b 각각의 수직 축은 신호 세기의 임의 단위(arbitrary units)(AU)이다. 측정되는 플라즈마에 인접한 표면들의 조건들을 평가하기 위해 개별 피크들의 세기들, 피크 세기들의 비율들 및 다른 통계들과 같은 방출 피크 정보가 이용될 수 있다.
플라즈마에 인접한 표면들의 조건들을 평가하는 예가 도 8a, 도 8b 및 도 9에 예시되어 있다. 도 8a 및 도 8b는 수소 피크(도 8a, 데이터(700)) 및 불소 피크들(도 8b, 데이터(710, 720))에 대해, 시간이 지남에 따라, 폴리실리콘 에칭 프로세스를 위해 플라즈마를 발생시키는 챔버에서 측정된 방출 피크 세기들의 플롯들을 도시한다. 도 8a 및 도 8b 둘 다는 챔버가 소정 시간 동안 대기에 개방된 기간인 장비 조정(equipment intervention)이 수행된 이후에 시작하는 동일한 시간에서의 동일한 플라즈마 챔버로부터의 데이터를 나타낸다. 컨디셔닝 사이클들이 실행되었고, 폴리실리콘에 대한 플라즈마 프로세스의 에칭률이 주기적으로 측정되었다. 도 8a 및 도 8b에 나타낸 시간 기간은 대략 18 시간이다.
도 8a에서는, 데이터(700)에서, 수소 피크 세기가 시간이 지남에 따라 점진적으로 증가하는 것을 알 수 있다. 도 8b에서는, 데이터(710 및 720)에서, 불소 피크 세기가 약 처음 2 시간 내에는 약간 증가하지만, 다음에는 거의 일정하게 유지되는 것을 알 수 있다.
도 9는 도 8a로부터의 수소 방출 피크들 중 선택된 수소 방출 피크들과, 선택된 수소 방출 피크들에 대응하는 시간들에서 취해진 폴리실리콘 에칭률 측정치들의 플롯이다. 도 9에서의 다이아몬드 형상 포인트들은 좌측의 수직 축에 상관되는 H 방출 피크 세기들이고; 정사각형 형상 포인트들은 우측의 수직 축에 상관되는 폴리실리콘 에칭률 측정치들이고; 시간은 수평 축 상에 있다. 폴리실리콘 에칭률은 시간이 지남에 따라 H 방출 피크 세기들과 유사하게 변한다는 것을 알 수 있다. H 방출 피크 세기에 대한 에칭률의 경향 분석은, H 방출 피크 세기에 대한 에칭률의 관계에 대해 0.97의 상관 계수 r2을 나타내었다. 그러므로, H 방출 피크 세기는, H 피크에서의 안정성이 장비 안정성의 표시자로서 이용될 수 있도록 에칭률을 강하게 예측하였다. 이하, 이러한 현상의 기저에 있는 반응 메커니즘들, 및 에칭 프로세스 안정성을 개선하기 위한 컨디셔닝 플라즈마 레시피들이 설명된다.
Si 에칭 및 챔버 컨디셔닝 화학작용 및 레시피들
도 7a, 도 7b, 도 8a, 도 8b 및 도 9에서의 데이터와 연관된 폴리실리콘(Si) 에칭 프로세스는 다음의 반응에 따라 진행하는데:
2NF3 + H2 + Si(s) → 2HF + SiF4+ N2 (반응 (1))
여기서, 언급된 종들 전부는 (s)로 마킹된 고체들을 제외하고는 가스 형태로 이루어진다. 반응 (1)에서, 폴리실리콘은 고체 Si이고, 워크피스(50), 즉 반도체 웨이퍼 상에 막으로서 제공되며; NF3 및 H2는 가스들 및/또는 플라즈마 생성물들(예를 들어, 플라즈마(245)에서 발생됨, 도 2 참조)로서 제공된다. 반응 (1)에서 특정 중간 단계들은 생략되고; 예를 들어, 플라즈마(245)에서 발생되는 플라즈마 생성물들은 자유 H 라디칼들을 포함한다.
플라즈마(245)에서의 자유 H 라디칼들은 면판(225) 및 확산기(235)의 이트리아 표면들에 부착될 수 있다. 이트리아의 완전한 화학량론(full stoichiometry)은 Y2O3이지만, 이트리아 표면은 전형적으로 이 표면의 최외측 부분에서 YO를 제시하며, 이와 함께 H 라디칼은 댕글링 본드를 형성할 수 있다:
H + YO → YOH (반응 (2))
도 10a는 수소가 없는 이트리아 표면(750(1))을 예시하는 한편, 도 10b는 동일한 표면을 예시하는데, 여기서 몇몇 H 라디칼이 댕글링 본드들을 통해 이 표면에 부착되어, 표면(750(2))을 형성한다. 표면(750(1))이 플라즈마(245)에서의 H 라디칼들의 일부와 반응하기 때문에, 확산기(235)를 통과하는 H 라디칼 농도가 고갈된다. 점점 더 많은 H 라디칼들이 표면에 본딩되어 표면(750(2))을 형성함에 따라, H 라디칼 고갈의 속도가 감소되어, 워크피스(50)에 도달하는 H 라디칼 농도가 증가하게 되고, 이는 반응 (1)에 따른 에칭률 증가를 초래한다.
일부 경우들에서, 에칭률을 안정화하기 위해 이트리아 표면을 수소로 포화시키는 것이 가능할 수 있지만, 그렇게 하는 것은 매우 시간 소모적일 수 있고, 특정의 불리한 프로세스 특성들이 초래될 수 있다. 대안은, 적어도 수소의 일부를 적어도 제거하고 표면을 실질적으로 수소가 없는 상태로 남겨두어, 에칭률이 적어도 예측가능하게 하는 것이다. 자유 불소 라디칼들은 다음의 반응에 따라 수소를 스캐빈징(scavenge)할 수 있다:
F + YOH(s) → YO(s)+ HF (반응 (3))
컨디셔닝 플라즈마 단계를 통해 반응 (3)을 수행하기 위해 자유 F 라디칼들이 공급될 수 있다. 실시예에서, 컨디셔닝 플라즈마 단계는 NF3으로부터 플라즈마를 발생시킨다. 다른 F 함유 가스들이 컨디셔닝 단계를 위해 이용될 수 있지만, NF3이 Si 에칭 단계를 위해 플라즈마 처리 장비 내로 이미 배관되어 있는 경우에는 NF3이 유리할 수 있다. 도 10c는 이트리아 표면(750(2))과 비교하여 볼 때, H의 일부를 스트리핑하기 위해 자유 F 라디칼들과 반응하는 이트리아 표면(750(3))을 예시한다. 이트리아 표면들 상에 과잉 H를 갖는 챔버에서 에칭률 안정성을 재확립하기 위해, H 전부를 제거할 필요는 없다. 합리적인 시간량 내에 에칭률을 안정화하기 위해, 에칭 단계에서 추가되는 만큼의 H를 컨디셔닝 레시피로 제거하는 것이 충분할 수 있다. 이것은 연속적인 워크피스 처리 단계들 사이에서 컨디셔닝 플라즈마를 수행함으로써 행해질 수 있다. 폴리실리콘 에칭 프로세스 및 에칭되는 웨이퍼들이 안정적일 때, 컨디셔닝 레시피는 시한성(timed) NF3 플라즈마 단계로서 실행될 수 있다. 또한, (예를 들어, H 방출 피크가 특정 값으로 떨어지는 것에 기초하여) 플라즈마를 정지시키기에 적합한 시간을 결정하기 위해 NF3 플라즈마 동안 H 방출 피크를 모니터링하는 것이 바람직할 수 있다. H 피크는 컨디셔닝 NF3 플라즈마 단계 동안 모니터링될 수 있거나, 또는 H 피크는 에칭 단계 동안 모니터링되어, 후속 컨디셔닝 플라즈마 단계의 하나 이상의 파라미터, 예컨대 컨디셔닝 플라즈마 단계 동안의 시간, RF 전력, 압력 또는 가스 유동을 조정하기 위해 이용될 수 있다.
도 11은 워크피스 상에서의 에칭과 컨디셔닝 단계를 교대로 행하는 에칭 레시피(800)를 예시하는 흐름도이다. 에칭 레시피(800)는 이하 논의되는 바와 같이 다양한 에칭 및 컨디셔닝 단계들이 이용될 수 있다는 점에서 일반화된다.
레시피(800)는, 단계(810)에서, 에칭될 워크피스를 로딩하는 것에 의해 시작된다. 단계(810)의 예는 에칭될 Si를 갖는 반도체 웨이퍼를 도 2의 플라즈마 처리 시스템(200) 내로 로딩하는 것이다. 다음에, 단계(820)에서, 에칭이 수행된다. 단계(820)의 예는 위의 반응 (1)에 따라 NF3 + H2로 Si를 에칭하는 것이다. 단계(820) 동안, 플라즈마 처리 시스템의 표면들은 에칭을 위해 이용되는 가스들 및/또는 플라즈마 생성물들에 의해 열화될 수 있다. 이러한 열화의 예는 H 라디칼들이 위의 반응 (2)에 따라 이트리아 표면들에 대한 댕글링 본드들을 형성하는 것이다. OES를 이용하여 플라즈마에서의 방출 피크를 모니터링하는 선택적인 단계(825)는 위에서 논의된 장치(도 2 및 도 3 참조)를 이용하여 단계(820)와 동시에 수행될 수 있다. 방출 피크 정보는, 챔버 조건 및 그에 따른 에칭률이 워크피스 간에 안정적이라는 것을 확인하기 위해 그리고/또는 컨디셔닝 단계(단계(840))의 시간을 조정하기 위해 장비 모니터로서 이용될 수 있다. 단계(825)의 예에서, H 방출 피크 정보가 모니터링되고, 기록되고, 그리고/또는 나중에 단계(840)를 정지할 때를 결정하기 위해 이용된다. 단계(820) 이후에, 워크피스는 선택적인 단계(830)에서 언로딩될 수 있고; 대안적으로, 단계(840)에서 설명되는 처리가 워크피스에 영향을 미치지 않을 것이라면, 단계(830)는 생략될 수 있다. 단계(830)의 생략은 단계(830)가 포함되는 경우보다 레시피(800)가 약간 더 신속하게 실행되게 할 수 있는데, 그 이유는 언로딩을 위해 프로세스 챔버를 배기하고 단계(840)에서 발생되는 플라즈마에 대한 가스 유동들을 재확립하는 데에 전형적으로 요구되는 시간 때문이다.
다음에, 단계(840)에서, 컨디셔닝 플라즈마가 수행된다. 단계(840)의 예는, 위의 반응 (3)에 따라 이트리아 표면들로부터 H를 제거하기 위해 NF3 플라즈마로 플라즈마 발생 챔버를 컨디셔닝하는 것이다. OES를 이용하여 플라즈마에서의 방출 피크를 모니터링하는 선택적인 단계(845)는 단계(840)와 동시에 수행될 수 있다. 선택적인 단계(845)의 예는 OES를 이용하여 플라즈마에서의 H 방출 피크를 모니터링하는 것이다. 방출 피크 정보는 단계(840)의 시간을 조정하기 위해, 그리고/또는 레시피(800)의 각각의 반복 이후에 챔버 조건 및 그에 따른 에칭률이 일관되는 것을 확인하기 위해 장비 모니터로서 이용될 수 있다.
도 4 및 도 5의 맥락에서 레시피(800)를 고려하면, 한 쌍의 처리 챔버(408)가 유사한 프로세스들에 전용일 때, 에칭 단계(820) 및/또는 컨디셔닝 플라즈마 단계(840)는 한 쌍의 챔버(408) 각각에 대해 구체적으로 조정될 수 있고, 이러한 조정은 방출 피크 모니터링에 기초할 수 있다고 인식된다. 예를 들어, 레시피(800)는 에칭 단계(820) 또는 컨디셔닝 플라즈마 단계(840) 중 어느 하나 동안 방출 피크를 모니터링할 수 있고, 에칭 단계(820)에서 2개의 챔버의 성능을 엄격하게 매칭된 상태로 유지하기 위해 2개의 챔버에 걸쳐 컨디셔닝 단계(840)의 시간, RF 전력, 압력 및/또는 가스 유동과 같은 파라미터들을 조정할 수 있다.
Si 3 N 4 에칭 및 챔버 컨디셔닝 화학작용 및 레시피들
예시적인 실리콘 질화물(Si3N4, 때로는 본 명세서에서 단순히 "질화물"이라고 지칭됨) 에칭 프로세스는 다음의 반응에 따라 진행한다:
4NF3 + Si3N4 → 3SiF4 + 4N2 (반응 (4))
반응 (4)에서, Si3N4는 워크피스(50), 즉 반도체 웨이퍼 상의 막으로서 제공되고; NF3의 플라즈마 생성물들은 워크피스에 제공된다(예를 들어, 플라즈마(245)에서 발생됨, 도 2 참조). 반응 (1)에서 특정 중간 단계들은 생략되고; 예를 들어, 플라즈마(245)에서 발생되는 플라즈마 생성물들은 자유 F 라디칼들을 포함한다.
플라즈마(245)에서의 자유 F 라디칼들은 면판(225) 및 확산기(235)의 이트리아 표면들에 부착되어, 댕글링 본드들을 형성할 수 있다:
F + YO → YOF (반응 (5))
도 12a는 이트리아 표면(900(1))을 예시하는데, 여기서 몇몇 F 라디칼이 댕글링 본드들을 통해 이 표면에 부착되어 있다. F 라디칼들은 에칭 동안 이트리아 표면으로부터 탈착(desorb)될 수 있고, 실리콘 이산화물(SiO2, 때로는 본 명세서에서 단순히 "산화물"이라고 지칭됨)에 대한 질화물 에칭의 에칭 선택성 열화를 야기시킬 수 있다. 적어도 일부 처리 시나리오들에서, 질화물 에칭들은 산화물에 비해 질화물에 대해 선택성이 있을 필요가 있는데, 즉 질화물 에칭들은 산화물을 에칭하는 것보다 훨씬 더 빠른 속도로 질화물을 에칭해야 한다. 위에서 논의된 Si 에칭과 다소 유사하게, 산화물 에칭률은 올라갈 것이고, 따라서 챔버 벽들 상의 F가 증가함에 따라, 선택성이 열화될 것이다.
레시피(800)의 다른 응용은 이러한 문제를 개량하기 위한 방식을 제공한다. 자유 H 라디칼들은 위의 반응 (3)의 역과 매우 유사하게, 챔버 벽들로부터 F를 스캐빈징할 수 있다:
H + YOF(s) → YO(s)+ HF (반응 (6))
도 12b는 반응 (6)을 겪는 이트리아 표면(900(2))을 예시한다. 위에서 논의된 Si 에칭 및 흡착된 H와 마찬가지로, 이트리아 표면(900(2))으로부터 F 전부를 제거하는 것은 필요하지 않을 수 있지만, 산화물에 대한 불량한 선택성이 문제가 되지 않을 정도로 충분히 낮은 레벨 바로 아래까지 F를 스캐빈징하는 것이 도움이 될 수 있다.
그러므로, 일 실시예에서, 레시피(800)는 반응 (4)를 유도하여 Si3N4를 에칭하기 위해 에칭 단계(820)에서 NF3을 이용하여, 그리고 반응 (6)을 유도하도록 자유 H 라디칼들을 발생시키기 위해 컨디셔닝 단계(840)에서 NH3 및/또는 H2와 같은 수소 함유 가스를 이용하여 실행될 수 있다. 이러한 경우에, 에칭 단계(820)가 수행될 때의 다음 레시피 사이클 이전에, 단계(840)의 끝에서 플라즈마 챔버 조건의 일관성을 보장하기 위해 단계(845)에서 F 방출 피크들이 모니터링될 수 있다. 또한, 처리될 다음 워크피스(들)가 극단적으로 높은 선택성의 에칭으로부터 혜택을 받는다면, 흡착된 F를 극단적으로 낮은 레벨들로 유도하기 위해 컨디셔닝 단계(840)를 더 길게 실행하는 것도 가능할 수 있다. 또한, 본 실시예에서, 워크피스가 HF의 트레이스들을 갖는 수소 플라즈마 생성물들에 의해 악영향을 받지 않는다면, 단계(830) 없이 레시피(800)를 실행하는 것이 가능할 수 있다.
챔버 컨디셔닝 화학작용 및 레시피들 - 수분으로부터 흡착된 산소
플라즈마 장비가 유지보수 작업 동안 대기에 노출되거나 새롭게 구축될 때, 수분은 불화된 이트리아 표면들과 반응하여, 여분의 산소가 이러한 표면들에 부착되게 할 수 있다. 산소 흡착 프로세스는 다음의 반응에 따라 진행되는데:
2YOF + H2O → YO + YO2 + 2HF (반응 (7))
이것은 고체 형태의 YO2 및 가스 형태로 제거되는 HF를 형성하도록 반응하는 흡착된 불소를 갖는 표면(950(1))을 도시하는 도 13a에 예시되어 있다. 이트리아 표면 상의 여분의 O는 처리 플라즈마들과 반응할 수 있고/있거나, 이러한 플라즈마들의 의도된 반응들과 간섭할 수 있다.
흡착된 F를 감소시키는 것과 마찬가지로, YO2는 NH3 및/또는 H2와 같은 수소 함유 가스로 처리되어, 여분의 산소를 제거하는 플라즈마를 형성할 수 있고, 이는 이트리아를 그 본래의 상태(native state)로 남겨둔다. 플라즈마는 플라즈마 생성물들로서 자유 H 라디칼들을 생성하고, 이것은 다음에 따라 반응한다:
2H + YO2(s) --> YO(s)+ H2O (반응 (8))
도 13b는 고체 형태의 YO2의 인스턴스를 갖는 표면(960(1))을 도시한다. 도 13b에 도시된 바와 같이, H 라디칼들은 YO2의 산소 원자와 반응하여 H2O를 형성하고, 이것은 결과적인 표면(960(2))으로부터 증기 형태로 제거된다. 위에서 논의된 Si 에칭의 경우와 마찬가지로, 플라즈마 발생 공동 표면들의 안정성을 위해 H 방출 피크가 모니터링될 수 있고, 일정한 H 피크는 안정적인 YO 표면을 나타낸다. 또한, H 함유 플라즈마는 위에서 도 10b와 관련하여 논의된 바와 같이 YO 표면들에 부착된 H를 남겨둘 수 있다. 그러므로, 플라즈마 처리 장비를 위해 의도되는 처리에 종속하여, 도 10c에 도시된 바와 같이, H 라디칼 처리 동안 YO 표면들에 부착될 수 있는 수소를 감소시키기 위해, 챔버는 불소 함유 가스(예를 들어, NF3)로부터 발생된 플라즈마로 추가로 컨디셔닝될 수 있다. 컨디셔닝 처리는 단순히 레시피(800)(도 11)의 단계(840)를 실행하여, 피크들이 안정적일 때까지 광학 방출 분광계로 하나 이상의 방출 피크(들)를 선택적으로 모니터링하는 것(단계(845))에 해당할 것이다.
수개의 실시예가 설명되었지만, 본 기술분야의 통상의 기술자라면, 본 발명의 사상으로부터 벗어나지 않고서 다양한 수정물들, 대안적인 구성들 및 등가물들이 이용될 수 있다고 인식할 것이다. 추가적으로, 본 발명을 불필요하게 모호하게 하는 것을 회피하기 위해 다수의 잘 알려진 프로세스 및 요소는 설명되지 않았다. 따라서, 상술한 설명은 본 발명의 범위를 제한하는 것으로 간주되어서는 안 된다.
값들의 범위가 제공되는 경우, 맥락이 명확하게 다르게 지시하지 않는 한, 그 범위의 상한과 하한 사이에서 하한의 단위의 10분의 1까지의 각각의 중간 값이 또한 구체적으로 개시된다는 점이 이해된다. 언급된 범위 내의 임의의 언급된 값 또는 중간 값과 그 언급된 범위 내의 임의의 다른 언급된 값 또는 중간 값 사이의 각각의 더 작은 범위가 포괄된다. 이러한 더 작은 범위들의 상한 및 하한은 독립적으로 범위 내에 포함되거나 배제될 수 있고, 더 작은 범위들 내에 이러한 상한과 하한 중 어느 하나 또는 둘 다가 포함되거나 둘 다가 포함되지 않는 각각의 범위는 언급된 범위 내의 임의의 구체적으로 배제된 한계를 조건으로 하여 본 발명 내에 또한 포괄된다. 언급된 범위가 이러한 상한과 하한 중 하나 또는 둘 다를 포함하는 경우, 이러한 포함된 상한과 하한 중 어느 하나 또는 둘 다를 배제하는 범위들도 또한 포함된다.
본 명세서 및 첨부된 청구항들에서 이용되는 바와 같이, 단수 형태("a", "an" 및 "the")는, 맥락이 명확하게 다르게 지시하지 않는 한, 복수의 지시대상을 포함한다. 따라서, 예를 들어, "프로세스" 또는 "레시피"에 대한 언급은 복수의 이러한 프로세스 및 레시피를 포함하고, "전극"에 대한 언급은 본 기술분야의 통상의 기술자에게 알려진 하나 이상의 전극 및 그 등가물들에 대한 언급 등을 포함한다. 또한, "포함"이라는 단어들("comprise", "comprising", "include", "including" 및 "includes")은, 본 명세서 및 다음의 청구항들에서 이용될 때, 언급된 특징들, 정수들, 컴포넌트들 또는 단계들의 존재를 명시하도록 의도되지만, 하나 이상의 다른 특징들, 정수들, 컴포넌트들, 단계들, 동작들 또는 그룹들의 존재 또는 추가를 배제하지는 않는다.

Claims (20)

  1. 플라즈마 소스로서,
    내부의 제1 천공들(perforations)을 통해 하나 이상의 플라즈마 소스 가스를 이송하도록 구성된 제1 평면을 포함하는 제1 천공된 전극;
    제2 평면을 포함하는 제2 천공된 전극 - 상기 제2 평면은 상기 제2 평면을 통해 프로세스 챔버를 향하여 플라즈마 생성물들을 이동시키도록 구성되고, 상기 제2 천공된 전극은 전기 접지로 유지됨 -;
    절연체 - 상기 절연체는, 상기 제1 천공된 전극, 상기 제2 천공된 전극, 및 상기 절연체가 플라즈마 발생 공동을 정의하도록, 상기 제1 천공된 전극의 주변부 및 상기 제2 천공된 전극의 주변부에 대해 상기 제1 평면 및 상기 제2 평면과 접촉하도록 배치된 상부면 및 하부면을 가짐 -; 및
    상기 플라즈마 생성물들을 생성하기 위해 상기 플라즈마 발생 공동에서 상기 하나 이상의 플라즈마 소스 가스로 플라즈마를 점화(ignite)시키도록 상기 제1 천공된 전극 및 상기 제2 천공된 전극에 걸쳐 전기 전력을 제공하는 전력 공급부
    를 포함하고,
    상기 절연체는 상기 플라즈마로부터의 광학 신호를 제공하는 포트를 포함하고,
    상기 포트는:
    상기 절연체 내에 형성된 방사상 애퍼쳐(radial aperture);
    상기 방사상 애퍼쳐의 외측 개구에 걸쳐 상기 절연체에 대해 밀봉가능한 광학 윈도우; 및
    상기 플라즈마로부터의 광학 방출들이 광섬유 내로 전파되어 상기 광학 신호를 형성하도록 상기 광학 윈도우에 인접하여 상기 광섬유를 위치시키는 고정구를 포함하고,
    상기 광섬유는 상기 광학 신호가 상기 플라즈마 발생 공동 내에서 유래되는 광학 방출들로 제한되도록 배향되는, 플라즈마 소스.
  2. 제1항에 있어서,
    상기 광학 신호는, 상기 플라즈마 생성물들이 상기 제2 천공된 전극을 통해 상기 프로세스 챔버를 향하여 이동한 이후에 상기 플라즈마 생성물들의 상호작용들에 의해 영향을 받지 않는, 플라즈마 소스.
  3. 제1항에 있어서,
    상기 절연체는 세라믹 링인, 플라즈마 소스.
  4. 제1항에 있어서,
    상기 광학 윈도우는 사파이어 또는 석영을 포함하는, 플라즈마 소스.
  5. 제1항에 있어서,
    상기 광학 신호를 수신하며 상기 광학 신호로부터 방출 피크 데이터를 발생시키는 광학 방출 분광계(optical emission spectrometer)를 더 포함하는 플라즈마 소스.
  6. 제5항에 있어서,
    상기 방출 피크 데이터의 레코드들을 발생시키도록 구성된 컴퓨터를 더 포함하는 플라즈마 소스.
  7. 제6항에 있어서,
    상기 방출 피크 데이터는 수소 방출 피크 데이터를 포함하고, 상기 컴퓨터는 상기 플라즈마 소스의 순차적인 프로세스 시퀀스들에 걸쳐 상기 수소 방출 피크 데이터의 안정성 메트릭을 계산하도록 구성되는, 플라즈마 소스.
  8. 제1항에 있어서,
    상기 제1 천공된 전극 및 상기 제2 천공된 전극 중 적어도 하나는 이트리아를 포함하는, 플라즈마 소스.
  9. 제1항에 있어서,
    상기 하나 이상의 소스 가스는 불소 소스를 포함하는, 플라즈마 소스.
  10. 제9항에 있어서,
    상기 불소 소스는 NF3을 포함하는, 플라즈마 소스.
  11. 제1항에 있어서,
    상기 제1 천공된 전극의 상기 제1 평면은 상기 제1 천공된 전극의 천공된 중심 영역으로부터, 상기 제1 평면이 상기 절연체의 상기 상부면과 접촉하여 배치되는 주변부까지 단일 평면을 따라 연장되는, 플라즈마 소스.
  12. 제1항에 있어서,
    상기 제2 천공된 전극의 상기 제2 평면은 상기 제2 천공된 전극의 천공된 중심 영역으로부터, 상기 제2 평면이 상기 절연체의 상기 하부면과 접촉하여 배치되는 주변부까지 단일 평면을 따라 연장되는, 플라즈마 소스.
  13. 삭제
  14. 삭제
  15. 삭제
  16. 삭제
  17. 삭제
  18. 삭제
  19. 삭제
  20. 삭제
KR1020177012596A 2014-10-14 2015-09-23 플라즈마 처리 장비에서의 내부 표면 컨디셔닝 평가를 위한 시스템들 및 방법들 KR102486378B1 (ko)

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US14/514,222 2014-10-14
US14/514,222 US9966240B2 (en) 2014-10-14 2014-10-14 Systems and methods for internal surface conditioning assessment in plasma processing equipment
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Families Citing this family (114)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9499898B2 (en) 2014-03-03 2016-11-22 Applied Materials, Inc. Layered thin film heater and method of fabrication
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
US9478434B2 (en) 2014-09-24 2016-10-25 Applied Materials, Inc. Chlorine-based hardmask removal
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US9502258B2 (en) 2014-12-23 2016-11-22 Applied Materials, Inc. Anisotropic gap etch
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10204795B2 (en) * 2016-02-04 2019-02-12 Applied Materials, Inc. Flow distribution plate for surface fluorine reduction
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US10546729B2 (en) * 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
TWI620228B (zh) 2016-12-29 2018-04-01 財團法人工業技術研究院 電漿處理裝置與電漿處理方法
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10319649B2 (en) * 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
JP2018206847A (ja) * 2017-05-31 2018-12-27 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、プログラムおよび基板処理装置
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10424487B2 (en) 2017-10-24 2019-09-24 Applied Materials, Inc. Atomic layer etching processes
CN109727837B (zh) * 2017-10-30 2021-11-23 台湾积体电路制造股份有限公司 等离子体设备及等离子体设备监测方法
TWI677895B (zh) * 2017-10-30 2019-11-21 台灣積體電路製造股份有限公司 電漿設備及電漿設備監測方法
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
JP6999410B2 (ja) * 2017-12-25 2022-01-18 東京エレクトロン株式会社 基板処理方法
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10975470B2 (en) * 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
TWI766433B (zh) 2018-02-28 2022-06-01 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US10892198B2 (en) * 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11220747B2 (en) 2018-10-29 2022-01-11 Applied Materials, Inc. Complementary pattern station designs
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) * 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
US11145501B2 (en) * 2020-02-20 2021-10-12 Perkinelmer, Inc. Thermal management for instruments including a plasma source
US11776793B2 (en) * 2020-11-13 2023-10-03 Applied Materials, Inc. Plasma source with ceramic electrode plate
CN113066591B (zh) * 2021-03-26 2022-05-20 核工业西南物理研究院 一种测量等离子体极向速度与湍流输运的静电探针阵列
US20230028215A1 (en) * 2021-07-21 2023-01-26 General Electric Company System and method for coating ceramic fiber
US20230170192A1 (en) * 2021-11-29 2023-06-01 Applied Materials, Inc. Method and apparatus for realtime wafer potential measurement in a plasma processing chamber

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040144490A1 (en) 2003-01-27 2004-07-29 Applied Materials, Inc. Method and apparatus for cleaning a CVD chamber
JP2009505429A (ja) * 2005-08-18 2009-02-05 エリコン ユーエスエイ、インコーポレイテッド ガス注入孔を用いたｐｅｃｖｄのための光学的放射干渉測定
US20140057447A1 (en) * 2012-08-02 2014-02-27 Applied Materials, Inc. Semiconductor processing with dc assisted rf power for improved control
WO2014066541A1 (en) * 2012-10-26 2014-05-01 Applied Materials, Inc. Pecvd apparatus and process
JP2014149983A (ja) * 2013-02-01 2014-08-21 Toshiba Corp プラズマ処理装置用電極とその製造方法、及びプラズマ処理装置

Family Cites Families (2002)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2369620A (en) 1941-03-07 1945-02-13 Battelle Development Corp Method of coating cupreous metal with tin
US3451840A (en) 1965-10-06 1969-06-24 Us Air Force Wire coated with boron nitride and boron
US3401302A (en) 1965-11-01 1968-09-10 Humphreys Corp Induction plasma generator including cooling means, gas flow means, and operating means therefor
US3537474A (en) 1968-02-19 1970-11-03 Varian Associates Push button vacuum control valve and vacuum system using same
US3756511A (en) 1971-02-02 1973-09-04 Kogyo Kaihatsu Kenyusho Nozzle and torch for plasma jet
US3969077A (en) 1971-12-16 1976-07-13 Varian Associates Alkali metal leak detection method and apparatus
US4632857A (en) 1974-05-24 1986-12-30 Richardson Chemical Company Electrolessly plated product having a polymetallic catalytic film underlayer
US4232060A (en) 1979-01-22 1980-11-04 Richardson Chemical Company Method of preparing substrate surface for electroless plating and products produced thereby
US4397812A (en) 1974-05-24 1983-08-09 Richardson Chemical Company Electroless nickel polyalloys
US3937857A (en) 1974-07-22 1976-02-10 Amp Incorporated Catalyst for electroless deposition of metals
US4006047A (en) 1974-07-22 1977-02-01 Amp Incorporated Catalysts for electroless deposition of metals on comparatively low-temperature polyolefin and polyester substrates
US4341592A (en) 1975-08-04 1982-07-27 Texas Instruments Incorporated Method for removing photoresist layer from substrate by ozone treatment
US4190488A (en) 1978-08-21 1980-02-26 International Business Machines Corporation Etching method using noble gas halides
US4265943A (en) 1978-11-27 1981-05-05 Macdermid Incorporated Method and composition for continuous electroless copper deposition using a hypophosphite reducing agent in the presence of cobalt or nickel ions
US4234628A (en) 1978-11-28 1980-11-18 The Harshaw Chemical Company Two-step preplate system for polymeric surfaces
US4214946A (en) 1979-02-21 1980-07-29 International Business Machines Corporation Selective reactive ion etching of polysilicon against SiO2 utilizing SF6 -Cl2 -inert gas etchant
US4361441A (en) 1979-04-17 1982-11-30 Plasma Holdings N.V. Treatment of matter in low temperature plasmas
US4209357A (en) 1979-05-18 1980-06-24 Tegal Corporation Plasma reactor apparatus
IT1130955B (it) 1980-03-11 1986-06-18 Oronzio De Nora Impianti Procedimento per la formazione di elettroci sulle superficie di membrane semipermeabili e sistemi elettrodo-membrana cosi' prodotti
US4361418A (en) 1980-05-06 1982-11-30 Risdon Corporation High vacuum processing system having improved recycle draw-down capability under high humidity ambient atmospheric conditions
NL8004005A (nl) 1980-07-11 1982-02-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
US4381441A (en) 1980-10-30 1983-04-26 Western Electric Company, Inc. Methods of and apparatus for trimming film resistors
US4340462A (en) 1981-02-13 1982-07-20 Lam Research Corporation Adjustable electrode plasma processing chamber
US4368223A (en) 1981-06-01 1983-01-11 Asahi Glass Company, Ltd. Process for preparing nickel layer
DE3205345A1 (de) 1982-02-15 1983-09-01 Philips Patentverwaltung Gmbh, 2000 Hamburg "verfahren zur herstellung von fluordotierten lichtleitfasern"
US4585920A (en) 1982-05-21 1986-04-29 Tegal Corporation Plasma reactor removable insert
JPS591671A (ja) 1982-05-28 1984-01-07 Fujitsu Ltd プラズマｃｖｄ装置
JPS59126778A (ja) 1983-01-11 1984-07-21 Tokyo Denshi Kagaku Kabushiki プラズマエツチング方法及びその装置
JPS59222922A (ja) 1983-06-01 1984-12-14 Nippon Telegr & Teleph Corp <Ntt> 気相成長装置
JPS6060060A (ja) 1983-09-12 1985-04-06 株式会社日立製作所 鉄道車両の扉開閉装置
US4579618A (en) 1984-01-06 1986-04-01 Tegal Corporation Plasma reactor apparatus
US4656052A (en) 1984-02-13 1987-04-07 Kyocera Corporation Process for production of high-hardness boron nitride film
US4656076A (en) 1985-04-26 1987-04-07 Triquint Semiconductors, Inc. Self-aligned recessed gate process
US4600464A (en) 1985-05-01 1986-07-15 International Business Machines Corporation Plasma etching reactor with reduced plasma potential
US4807016A (en) 1985-07-15 1989-02-21 Texas Instruments Incorporated Dry etch of phosphosilicate glass with selectivity to undoped oxide
US4610775A (en) 1985-07-26 1986-09-09 Westinghouse Electric Corp. Method and apparatus for clearing short-circuited, high-voltage cathodes in a sputtering chamber
JPS6245119A (ja) * 1985-08-23 1987-02-27 Matsushita Electric Ind Co Ltd ドライエツチング装置
US4749440A (en) 1985-08-28 1988-06-07 Fsi Corporation Gaseous process and apparatus for removing films from substrates
US4668335A (en) 1985-08-30 1987-05-26 Advanced Micro Devices, Inc. Anti-corrosion treatment for patterning of metallic layers
US4690746A (en) 1986-02-24 1987-09-01 Genus, Inc. Interlayer dielectric process
US4715937A (en) 1986-05-05 1987-12-29 The Board Of Trustees Of The Leland Stanford Junior University Low-temperature direct nitridation of silicon in nitrogen plasma generated by microwave discharge
US5000113A (en) 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
US4960488A (en) 1986-12-19 1990-10-02 Applied Materials, Inc. Reactor chamber self-cleaning process
US4951601A (en) 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
US5228501A (en) 1986-12-19 1993-07-20 Applied Materials, Inc. Physical vapor deposition clamping mechanism and heater/cooler
JPS63204726A (ja) 1987-02-20 1988-08-24 Anelva Corp 真空処理装置
US5322976A (en) 1987-02-24 1994-06-21 Polyonics Corporation Process for forming polyimide-metal laminates
KR910006164B1 (ko) 1987-03-18 1991-08-16 가부시키가이샤 도시바 박막형성방법과 그 장치
US4793897A (en) 1987-03-20 1988-12-27 Applied Materials, Inc. Selective thin film etch process
US4786360A (en) 1987-03-30 1988-11-22 International Business Machines Corporation Anisotropic etch process for tungsten metallurgy
US5198034A (en) 1987-03-31 1993-03-30 Epsilon Technology, Inc. Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
DE3884653T2 (de) 1987-04-03 1994-02-03 Fujitsu Ltd Verfahren und Vorrichtung zur Gasphasenabscheidung von Diamant.
US4913929A (en) 1987-04-21 1990-04-03 The Board Of Trustees Of The Leland Stanford Junior University Thermal/microwave remote plasma multiprocessing reactor and method of use
JP2598019B2 (ja) 1987-06-01 1997-04-09 富士通株式会社 感光体の製造方法
US4753898A (en) 1987-07-09 1988-06-28 Motorola, Inc. LDD CMOS process
US4904621A (en) 1987-07-16 1990-02-27 Texas Instruments Incorporated Remote plasma generation process using a two-stage showerhead
US4820377A (en) 1987-07-16 1989-04-11 Texas Instruments Incorporated Method for cleanup processing chamber and vacuum process module
US4857140A (en) 1987-07-16 1989-08-15 Texas Instruments Incorporated Method for etching silicon nitride
US4838990A (en) 1987-07-16 1989-06-13 Texas Instruments Incorporated Method for plasma etching tungsten
US4828649A (en) 1987-07-16 1989-05-09 Texas Instruments Incorporated Method for etching an aluminum film doped with silicon
US4867841A (en) 1987-07-16 1989-09-19 Texas Instruments Incorporated Method for etch of polysilicon film
JPS6432627A (en) 1987-07-29 1989-02-02 Hitachi Ltd Low-temperature dry etching method
US4919750A (en) 1987-09-14 1990-04-24 International Business Machines Corporation Etching metal films with complexing chloride plasma
US4810520A (en) 1987-09-23 1989-03-07 Magnetic Peripherals Inc. Method for controlling electroless magnetic plating
US5180435A (en) 1987-09-24 1993-01-19 Research Triangle Institute, Inc. Remote plasma enhanced CVD method and apparatus for growing an epitaxial semiconductor layer
KR930003136B1 (ko) 1987-10-14 1993-04-22 후루가와덴기 고오교오 가부시기가이샤 프라즈마 cvd에 의한 박막 형성장치
US4981551A (en) 1987-11-03 1991-01-01 North Carolina State University Dry etching of silicon carbide
US4792378A (en) 1987-12-15 1988-12-20 Texas Instruments Incorporated Gas dispersion disk for use in plasma enhanced chemical vapor deposition reactor
JP2804037B2 (ja) 1988-02-05 1998-09-24 株式会社東芝 ドライエッチング方法
JPH01297141A (ja) 1988-05-25 1989-11-30 Canon Inc マイクロ波プラズマ処理装置
US4900856A (en) 1988-05-26 1990-02-13 Ethyl Corporation Preparation of metal halide-amine complexes
JPH029115A (ja) 1988-06-28 1990-01-12 Mitsubishi Electric Corp 半導体製造装置
JPH02114525A (ja) 1988-10-24 1990-04-26 Toshiba Corp 有機化合物膜の除去方法及び除去装置
JPH02114530A (ja) 1988-10-25 1990-04-26 Mitsubishi Electric Corp 薄膜形成装置
KR930004115B1 (ko) 1988-10-31 1993-05-20 후지쓰 가부시끼가이샤 애싱(ashing)처리방법 및 장치
US5030319A (en) 1988-12-27 1991-07-09 Kabushiki Kaisha Toshiba Method of oxide etching with condensed plasma reaction product
US4985372A (en) 1989-02-17 1991-01-15 Tokyo Electron Limited Method of forming conductive layer including removal of native oxide
JP2823276B2 (ja) 1989-03-18 1998-11-11 株式会社東芝 Ｘ線マスクの製造方法および薄膜の内部応力制御装置
US4946903A (en) 1989-03-27 1990-08-07 The Research Foundation Of State University Of Ny Oxyfluoropolymers having chemically reactive surface functionality and increased surface energies
US5186718A (en) 1989-05-19 1993-02-16 Applied Materials, Inc. Staged-vacuum wafer processing system and method
US4987856A (en) 1989-05-22 1991-01-29 Advanced Semiconductor Materials America, Inc. High throughput multi station processor for multiple single wafers
US5061838A (en) 1989-06-23 1991-10-29 Massachusetts Institute Of Technology Toroidal electron cyclotron resonance reactor
US5270125A (en) 1989-07-11 1993-12-14 Redwood Microsystems, Inc. Boron nutride membrane in wafer structure
US4993358A (en) 1989-07-28 1991-02-19 Watkins-Johnson Company Chemical vapor deposition reactor and method of operation
US5013691A (en) 1989-07-31 1991-05-07 At&T Bell Laboratories Anisotropic deposition of silicon dioxide
US5028565A (en) 1989-08-25 1991-07-02 Applied Materials, Inc. Process for CVD deposition of tungsten layer on semiconductor wafer
US4994404A (en) 1989-08-28 1991-02-19 Motorola, Inc. Method for forming a lightly-doped drain (LDD) structure in a semiconductor device
US4980018A (en) 1989-11-14 1990-12-25 Intel Corporation Plasma etching process for refractory metal vias
EP0447155B1 (en) 1990-03-12 1995-07-26 Ngk Insulators, Ltd. Wafer heaters for use in semi-conductor-producing apparatus, heating units using such wafer heaters, and production of heaters
JP2960466B2 (ja) 1990-03-19 1999-10-06 株式会社日立製作所 半導体デバイスの配線絶縁膜の形成方法及びその装置
US5089441A (en) 1990-04-16 1992-02-18 Texas Instruments Incorporated Low-temperature in-situ dry cleaning process for semiconductor wafers
US5328810A (en) 1990-05-07 1994-07-12 Micron Technology, Inc. Method for reducing, by a factor or 2-N, the minimum masking pitch of a photolithographic process
US5147692A (en) 1990-05-08 1992-09-15 Macdermid, Incorporated Electroless plating of nickel onto surfaces such as copper or fused tungston
US5069938A (en) 1990-06-07 1991-12-03 Applied Materials, Inc. Method of forming a corrosion-resistant protective coating on aluminum substrate
US5238499A (en) 1990-07-16 1993-08-24 Novellus Systems, Inc. Gas-based substrate protection during processing
US5083030A (en) 1990-07-18 1992-01-21 Applied Photonics Research Double-sided radiation-assisted processing apparatus
US5235139A (en) 1990-09-12 1993-08-10 Macdermid, Incorprated Method for fabricating printed circuits
US5074456A (en) 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
US5089442A (en) 1990-09-20 1992-02-18 At&T Bell Laboratories Silicon dioxide deposition method using a magnetic field and both sputter deposition and plasma-enhanced cvd
KR930011413B1 (ko) 1990-09-25 1993-12-06 가부시키가이샤 한도오따이 에네루기 겐큐쇼 펄스형 전자파를 사용한 플라즈마 cvd 법
DE69116058T2 (de) 1990-09-27 1996-08-22 At & T Corp Verfahren zur Herstellung integrierter Schaltungen
JPH04142738A (ja) 1990-10-04 1992-05-15 Sony Corp ドライエッチング方法
JPH04355917A (ja) * 1990-10-12 1992-12-09 Seiko Epson Corp 半導体装置の製造装置
US5549780A (en) 1990-10-23 1996-08-27 Semiconductor Energy Laboratory Co., Ltd. Method for plasma processing and apparatus for plasma processing
JPH0817171B2 (ja) 1990-12-31 1996-02-21 株式会社半導体エネルギー研究所 プラズマ発生装置およびそれを用いたエッチング方法
JP2640174B2 (ja) 1990-10-30 1997-08-13 三菱電機株式会社 半導体装置およびその製造方法
JP3206916B2 (ja) 1990-11-28 2001-09-10 住友電気工業株式会社 欠陥濃度低減方法、紫外線透過用光学ガラスの製造方法及び紫外線透過用光学ガラス
US5217559A (en) 1990-12-10 1993-06-08 Texas Instruments Incorporated Apparatus and method for in-situ deep ultraviolet photon-assisted semiconductor wafer processing
US5578130A (en) 1990-12-12 1996-11-26 Semiconductor Energy Laboratory Co., Ltd. Apparatus and method for depositing a film
WO1992012535A1 (en) 1991-01-08 1992-07-23 Fujitsu Limited Process for forming silicon oxide film
JP2697315B2 (ja) 1991-01-23 1998-01-14 日本電気株式会社 フッ素含有シリコン酸化膜の形成方法
JP2787142B2 (ja) 1991-03-01 1998-08-13 上村工業 株式会社 無電解錫、鉛又はそれらの合金めっき方法
DE4107006A1 (de) 1991-03-05 1992-09-10 Siemens Ag Verfahren zum anisotropen trockenaetzen von aluminium bzw. aluminiumlegierungen enthaltenden leiterbahnebenen in integrierten halbleiterschaltungen
US5897751A (en) 1991-03-11 1999-04-27 Regents Of The University Of California Method of fabricating boron containing coatings
US5330578A (en) 1991-03-12 1994-07-19 Semiconductor Energy Laboratory Co., Ltd. Plasma treatment apparatus
US5290383A (en) 1991-03-24 1994-03-01 Tokyo Electron Limited Plasma-process system with improved end-point detecting scheme
EP0539559A1 (en) 1991-04-03 1993-05-05 Eastman Kodak Company HIGH DURABILITY MASK FOR DRY ETCHING OF GaAs
EP0511448A1 (en) 1991-04-30 1992-11-04 International Business Machines Corporation Method and apparatus for in-situ and on-line monitoring of a trench formation process
JPH04341568A (ja) 1991-05-16 1992-11-27 Toshiba Corp 薄膜形成方法及び薄膜形成装置
JP2699695B2 (ja) 1991-06-07 1998-01-19 日本電気株式会社 化学気相成長法
US5203911A (en) 1991-06-24 1993-04-20 Shipley Company Inc. Controlled electroless plating
US6077384A (en) 1994-08-11 2000-06-20 Applied Materials, Inc. Plasma reactor having an inductive antenna coupling power through a parallel plate electrode
US6074512A (en) 1991-06-27 2000-06-13 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners
US5279865A (en) 1991-06-28 1994-01-18 Digital Equipment Corporation High throughput interlevel dielectric gap filling process
JPH0521393A (ja) 1991-07-11 1993-01-29 Sony Corp プラズマ処理装置
JPH0562936A (ja) 1991-09-03 1993-03-12 Mitsubishi Electric Corp プラズマ処理装置およびプラズマクリーニング方法
US5240497A (en) 1991-10-08 1993-08-31 Cornell Research Foundation, Inc. Alkaline free electroless deposition
JPH05226480A (ja) 1991-12-04 1993-09-03 Nec Corp 半導体装置の製造方法
US5290382A (en) 1991-12-13 1994-03-01 Hughes Aircraft Company Methods and apparatus for generating a plasma for "downstream" rapid shaping of surfaces of substrates and films
US5279669A (en) 1991-12-13 1994-01-18 International Business Machines Corporation Plasma reactor for processing substrates comprising means for inducing electron cyclotron resonance (ECR) and ion cyclotron resonance (ICR) conditions
US5352636A (en) 1992-01-16 1994-10-04 Applied Materials, Inc. In situ method for cleaning silicon surface and forming layer thereon in same chamber
US5300463A (en) 1992-03-06 1994-04-05 Micron Technology, Inc. Method of selectively etching silicon dioxide dielectric layers on semiconductor wafers
JP3084497B2 (ja) 1992-03-25 2000-09-04 東京エレクトロン株式会社 ＳｉＯ２膜のエッチング方法
JP2773530B2 (ja) 1992-04-15 1998-07-09 日本電気株式会社 半導体装置の製造方法
JP2792335B2 (ja) 1992-05-27 1998-09-03 日本電気株式会社 半導体装置の製造方法
US5274917A (en) 1992-06-08 1994-01-04 The Whitaker Corporation Method of making connector with monolithic multi-contact array
US5880036A (en) 1992-06-15 1999-03-09 Micron Technology, Inc. Method for enhancing oxide to nitride selectivity through the use of independent heat control
KR100293830B1 (ko) 1992-06-22 2001-09-17 리차드 에이치. 로브그렌 플라즈마 처리 쳄버내의 잔류물 제거를 위한 플라즈마 정결방법
US5286297A (en) 1992-06-24 1994-02-15 Texas Instruments Incorporated Multi-electrode plasma processing apparatus
US5252178A (en) 1992-06-24 1993-10-12 Texas Instruments Incorporated Multi-zone plasma processing method and apparatus
US5534072A (en) 1992-06-24 1996-07-09 Anelva Corporation Integrated module multi-chamber CVD processing system and its method for processing subtrates
JP3688726B2 (ja) 1992-07-17 2005-08-31 株式会社東芝 半導体装置の製造方法
US5380560A (en) 1992-07-28 1995-01-10 International Business Machines Corporation Palladium sulfate solution for the selective seeding of the metal interconnections on polyimide dielectrics for electroless metal deposition
US5248371A (en) 1992-08-13 1993-09-28 General Signal Corporation Hollow-anode glow discharge apparatus
US5292370A (en) 1992-08-14 1994-03-08 Martin Marietta Energy Systems, Inc. Coupled microwave ECR and radio-frequency plasma source for plasma processing
US5271972A (en) 1992-08-17 1993-12-21 Applied Materials, Inc. Method for depositing ozone/TEOS silicon oxide films of reduced surface sensitivity
US5326427A (en) 1992-09-11 1994-07-05 Lsi Logic Corporation Method of selectively etching titanium-containing materials on a semiconductor wafer using remote plasma generation
US5306530A (en) 1992-11-23 1994-04-26 Associated Universities, Inc. Method for producing high quality thin layer films on substrates
JP2809018B2 (ja) 1992-11-26 1998-10-08 日本電気株式会社 半導体装置およびその製造方法
US5382311A (en) 1992-12-17 1995-01-17 Tokyo Electron Limited Stage having electrostatic chuck and plasma processing apparatus using same
US5500249A (en) 1992-12-22 1996-03-19 Applied Materials, Inc. Uniform tungsten silicide films produced by chemical vapor deposition
US5756402A (en) 1992-12-28 1998-05-26 Kabushiki Kaisha Toshiba Method of etching silicon nitride film
US5624582A (en) 1993-01-21 1997-04-29 Vlsi Technology, Inc. Optimization of dry etching through the control of helium backside pressure
US5366585A (en) 1993-01-28 1994-11-22 Applied Materials, Inc. Method and apparatus for protection of conductive surfaces in a plasma processing reactor
US5345999A (en) 1993-03-17 1994-09-13 Applied Materials, Inc. Method and apparatus for cooling semiconductor wafers
US5302233A (en) 1993-03-19 1994-04-12 Micron Semiconductor, Inc. Method for shaping features of a semiconductor structure using chemical mechanical planarization (CMP)
JP3236111B2 (ja) 1993-03-31 2001-12-10 キヤノン株式会社 プラズマ処理装置及び処理方法
US5800686A (en) 1993-04-05 1998-09-01 Applied Materials, Inc. Chemical vapor deposition chamber with substrate edge protection
KR0142150B1 (ko) 1993-04-09 1998-07-15 윌리엄 티. 엘리스 붕소 질화물을 에칭하기 위한 방법
US5416048A (en) 1993-04-16 1995-05-16 Micron Semiconductor, Inc. Method to slope conductor profile prior to dielectric deposition to improve dielectric step-coverage
EP0628644B1 (en) 1993-05-27 2003-04-02 Applied Materials, Inc. Improvements in or relating to susceptors suitable for use in chemical vapour deposition devices
US5591269A (en) 1993-06-24 1997-01-07 Tokyo Electron Limited Vacuum processing apparatus
US5292682A (en) 1993-07-06 1994-03-08 Eastman Kodak Company Method of making two-phase charge coupled device
US5413670A (en) 1993-07-08 1995-05-09 Air Products And Chemicals, Inc. Method for plasma etching or cleaning with diluted NF3
US5560779A (en) 1993-07-12 1996-10-01 Olin Corporation Apparatus for synthesizing diamond films utilizing an arc plasma
WO1995002900A1 (en) 1993-07-15 1995-01-26 Astarix, Inc. Aluminum-palladium alloy for initiation of electroless plating
DE69421465T2 (de) 1993-07-30 2000-02-10 Applied Materials, Inc. Verfahren zur Ablagerung von Silzium-Nitrid auf Siliziumoberflächen
US5483920A (en) 1993-08-05 1996-01-16 Board Of Governors Of Wayne State University Method of forming cubic boron nitride films
US5685946A (en) 1993-08-11 1997-11-11 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of producing buried porous silicon-geramanium layers in monocrystalline silicon lattices
US5468597A (en) 1993-08-25 1995-11-21 Shipley Company, L.L.C. Selective metallization process
US5865896A (en) 1993-08-27 1999-02-02 Applied Materials, Inc. High density plasma CVD reactor with combined inductive and capacitive coupling
US5614055A (en) 1993-08-27 1997-03-25 Applied Materials, Inc. High density plasma CVD and etching reactor
US5384284A (en) 1993-10-01 1995-01-24 Micron Semiconductor, Inc. Method to form a low resistant bond pad interconnect
SE501888C2 (sv) 1993-10-18 1995-06-12 Ladislav Bardos En metod och en apparat för generering av en urladdning i egna ångor från en radiofrekvenselektrod för kontinuerlig självförstoftning av elektroden
US5505816A (en) 1993-12-16 1996-04-09 International Business Machines Corporation Etching of silicon dioxide selectively to silicon nitride and polysilicon
US5415890A (en) 1994-01-03 1995-05-16 Eaton Corporation Modular apparatus and method for surface treatment of parts with liquid baths
US5403434A (en) 1994-01-06 1995-04-04 Texas Instruments Incorporated Low-temperature in-situ dry cleaning process for semiconductor wafer
JP3188363B2 (ja) 1994-01-21 2001-07-16 エフエスアイ・インターナショナル・インコーポレーテッド 循環クーラントを用いた温度コントローラ及びそのための温度制御方法
US5399237A (en) 1994-01-27 1995-03-21 Applied Materials, Inc. Etching titanium nitride using carbon-fluoride and carbon-oxide gas
US5451259A (en) 1994-02-17 1995-09-19 Krogh; Ole D. ECR plasma source for remote processing
US5454170A (en) 1994-03-02 1995-10-03 Vlsi Technology Inc. Robot to pedestal alignment head
US5439553A (en) 1994-03-30 1995-08-08 Penn State Research Foundation Controlled etching of oxides via gas phase reactions
EP0680072B1 (en) 1994-04-28 2003-10-08 Applied Materials, Inc. A method of operating a high density plasma CVD reactor with combined inductive and capacitive coupling
US5468342A (en) 1994-04-28 1995-11-21 Cypress Semiconductor Corp. Method of etching an oxide layer
US6110838A (en) 1994-04-29 2000-08-29 Texas Instruments Incorporated Isotropic polysilicon plus nitride stripping
US5531835A (en) 1994-05-18 1996-07-02 Applied Materials, Inc. Patterned susceptor to reduce electrostatic force in a CVD chamber
US5665640A (en) 1994-06-03 1997-09-09 Sony Corporation Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
US5628829A (en) 1994-06-03 1997-05-13 Materials Research Corporation Method and apparatus for low temperature deposition of CVD and PECVD films
US5580421A (en) 1994-06-14 1996-12-03 Fsi International Apparatus for surface conditioning
US5767373A (en) 1994-06-16 1998-06-16 Novartis Finance Corporation Manipulation of protoporphyrinogen oxidase enzyme activity in eukaryotic organisms
US5580385A (en) 1994-06-30 1996-12-03 Texas Instruments, Incorporated Structure and method for incorporating an inductively coupled plasma source in a plasma processing chamber
JP3501524B2 (ja) 1994-07-01 2004-03-02 東京エレクトロン株式会社 処理装置の真空排気システム
JP3411678B2 (ja) 1994-07-08 2003-06-03 東京エレクトロン株式会社 処理装置
US5592358A (en) 1994-07-18 1997-01-07 Applied Materials, Inc. Electrostatic chuck for magnetic flux processing
US5563105A (en) 1994-09-30 1996-10-08 International Business Machines Corporation PECVD method of depositing fluorine doped oxide using a fluorine precursor containing a glass-forming element
JPH08107101A (ja) 1994-10-03 1996-04-23 Fujitsu Ltd プラズマ処理装置及びプラズマ処理方法
US5597439A (en) 1994-10-26 1997-01-28 Applied Materials, Inc. Process gas inlet and distribution passages
TW344897B (en) 1994-11-30 1998-11-11 At&T Tcorporation A process for forming gate oxides possessing different thicknesses on a semiconductor substrate
US5558717A (en) 1994-11-30 1996-09-24 Applied Materials CVD Processing chamber
CN1053764C (zh) 1994-12-09 2000-06-21 中国科学院微电子中心 束致变蚀方法
EP0795048B1 (en) 1994-12-19 2000-03-15 Alcan International Limited Cleaning aluminium workpieces
US5792376A (en) 1995-01-06 1998-08-11 Kabushiki Kaisha Toshiba Plasma processing apparatus and plasma processing method
US5772770A (en) 1995-01-27 1998-06-30 Kokusai Electric Co, Ltd. Substrate processing apparatus
JPH08279495A (ja) 1995-02-07 1996-10-22 Seiko Epson Corp プラズマ処理装置及びその方法
US5571576A (en) 1995-02-10 1996-11-05 Watkins-Johnson Method of forming a fluorinated silicon oxide layer using plasma chemical vapor deposition
US5670066A (en) 1995-03-17 1997-09-23 Lam Research Corporation Vacuum plasma processing wherein workpiece position is detected prior to chuck being activated
US6039851A (en) 1995-03-22 2000-03-21 Micron Technology, Inc. Reactive sputter faceting of silicon dioxide to enhance gap fill of spaces between metal lines
US5556521A (en) 1995-03-24 1996-09-17 Sony Corporation Sputter etching apparatus with plasma source having a dielectric pocket and contoured plasma source
JPH08264510A (ja) 1995-03-27 1996-10-11 Toshiba Corp シリコン窒化膜のエッチング方法およびエッチング装置
US5571577A (en) 1995-04-07 1996-11-05 Board Of Trustees Operating Michigan State University Method and apparatus for plasma treatment of a surface
JP3360098B2 (ja) 1995-04-20 2002-12-24 東京エレクトロン株式会社 処理装置のシャワーヘッド構造
JP3270852B2 (ja) 1995-04-20 2002-04-02 東京エレクトロン株式会社 圧力調整装置及びこれを用いた部屋の連通方法
TW434745B (en) * 1995-06-07 2001-05-16 Tokyo Electron Ltd Plasma processing apparatus
US20010028922A1 (en) 1995-06-07 2001-10-11 Sandhu Gurtej S. High throughput ILD fill process for high aspect ratio gap fill
JP3599204B2 (ja) 1995-06-08 2004-12-08 アネルバ株式会社 Ｃｖｄ装置
JP2814370B2 (ja) 1995-06-18 1998-10-22 東京エレクトロン株式会社 プラズマ処理装置
US5997962A (en) 1995-06-30 1999-12-07 Tokyo Electron Limited Plasma process utilizing an electrostatic chuck
US5968379A (en) 1995-07-14 1999-10-19 Applied Materials, Inc. High temperature ceramic heater assembly with RF capability and related methods
US6197364B1 (en) 1995-08-22 2001-03-06 International Business Machines Corporation Production of electroless Co(P) with designed coercivity
US5755859A (en) 1995-08-24 1998-05-26 International Business Machines Corporation Cobalt-tin alloys and their applications for devices, chip interconnections and packaging
WO1997009737A1 (en) 1995-09-01 1997-03-13 Advanced Semiconductor Materials America, Inc. Wafer support system
US6228751B1 (en) 1995-09-08 2001-05-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US5719085A (en) 1995-09-29 1998-02-17 Intel Corporation Shallow trench isolation technique
US5716506A (en) 1995-10-06 1998-02-10 Board Of Trustees Of The University Of Illinois Electrochemical sensors for gas detection
JPH09106898A (ja) 1995-10-09 1997-04-22 Anelva Corp プラズマｃｖｄ装置、プラズマ処理装置及びプラズマｃｖｄ方法
US5635086A (en) 1995-10-10 1997-06-03 The Esab Group, Inc. Laser-plasma arc metal cutting apparatus
JPH09106899A (ja) 1995-10-11 1997-04-22 Anelva Corp プラズマｃｖｄ装置及び方法並びにドライエッチング装置及び方法
US5814238A (en) 1995-10-12 1998-09-29 Sandia Corporation Method for dry etching of transition metals
US5910340A (en) 1995-10-23 1999-06-08 C. Uyemura & Co., Ltd. Electroless nickel plating solution and method
US6015724A (en) 1995-11-02 2000-01-18 Semiconductor Energy Laboratory Co. Manufacturing method of a semiconductor device
US5599740A (en) 1995-11-16 1997-02-04 Taiwan Semiconductor Manufacturing Company, Ltd. Deposit-etch-deposit ozone/teos insulator layer method
US5648125A (en) 1995-11-16 1997-07-15 Cane; Frank N. Electroless plating process for the manufacture of printed circuit boards
US5846598A (en) 1995-11-30 1998-12-08 International Business Machines Corporation Electroless plating of metallic features on nonmetallic or semiconductor layer without extraneous plating
US5756400A (en) 1995-12-08 1998-05-26 Applied Materials, Inc. Method and apparatus for cleaning by-products from plasma chamber surfaces
US5733816A (en) 1995-12-13 1998-03-31 Micron Technology, Inc. Method for depositing a tungsten layer on silicon
US6261637B1 (en) 1995-12-15 2001-07-17 Enthone-Omi, Inc. Use of palladium immersion deposition to selectively initiate electroless plating on Ti and W alloys for wafer fabrication
WO1997022733A1 (en) 1995-12-19 1997-06-26 Fsi International Electroless deposition of metal films with spray processor
US5883012A (en) 1995-12-21 1999-03-16 Motorola, Inc. Method of etching a trench into a semiconductor substrate
EP0870327B1 (en) 1995-12-27 2002-09-11 Lam Research Corporation Method for filling trenches in a semiconductor wafer
US5679606A (en) 1995-12-27 1997-10-21 Taiwan Semiconductor Manufacturing Company, Ltd. method of forming inter-metal-dielectric structure
KR100260957B1 (ko) 1995-12-28 2000-07-01 츠치야 히로오 박판형상의 기판 이송방법 및 이송장치
US5674787A (en) 1996-01-16 1997-10-07 Sematech, Inc. Selective electroless copper deposited interconnect plugs for ULSI applications
US5824599A (en) 1996-01-16 1998-10-20 Cornell Research Foundation, Inc. Protected encapsulation of catalytic layer for electroless copper interconnect
US5891513A (en) 1996-01-16 1999-04-06 Cornell Research Foundation Electroless CU deposition on a barrier layer by CU contact displacement for ULSI applications
US6036878A (en) 1996-02-02 2000-03-14 Applied Materials, Inc. Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna
US5872052A (en) 1996-02-12 1999-02-16 Micron Technology, Inc. Planarization using plasma oxidized amorphous silicon
US5648175A (en) 1996-02-14 1997-07-15 Applied Materials, Inc. Chemical vapor deposition reactor system and integrated circuit
US6004884A (en) 1996-02-15 1999-12-21 Lam Research Corporation Methods and apparatus for etching semiconductor wafers
US6200412B1 (en) 1996-02-16 2001-03-13 Novellus Systems, Inc. Chemical vapor deposition system including dedicated cleaning gas injection
TW335517B (en) 1996-03-01 1998-07-01 Hitachi Ltd Apparatus and method for processing plasma
US5656093A (en) 1996-03-08 1997-08-12 Applied Materials, Inc. Wafer spacing mask for a substrate support chuck and method of fabricating same
JPH09260356A (ja) 1996-03-22 1997-10-03 Toshiba Corp ドライエッチング方法
US6065425A (en) 1996-03-25 2000-05-23 Canon Kabushiki Kaisha Plasma process apparatus and plasma process method
EP0891684B1 (en) 1996-03-25 2008-11-12 S. George Lesinski Attaching of an implantable hearing aid microactuator
US5858876A (en) 1996-04-01 1999-01-12 Chartered Semiconductor Manufacturing, Ltd. Simultaneous deposit and etch method for forming a void-free and gap-filling insulator layer upon a patterned substrate layer
US5712185A (en) 1996-04-23 1998-01-27 United Microelectronics Method for forming shallow trench isolation
US5843847A (en) 1996-04-29 1998-12-01 Applied Materials, Inc. Method for etching dielectric layers with high selectivity and low microloading
US6176667B1 (en) 1996-04-30 2001-01-23 Applied Materials, Inc. Multideck wafer processing system
KR100230981B1 (ko) 1996-05-08 1999-11-15 김광호 반도체장치 제조공정의 플라즈마 식각 방법
US5660957A (en) 1996-05-16 1997-08-26 Fujitsu Limited Electron-beam treatment procedure for patterned mask layers
US5863376A (en) 1996-06-05 1999-01-26 Lam Research Corporation Temperature controlling method and apparatus for a plasma processing chamber
US6048798A (en) 1996-06-05 2000-04-11 Lam Research Corporation Apparatus for reducing process drift in inductive coupled plasma etching such as oxide layer
US5820723A (en) 1996-06-05 1998-10-13 Lam Research Corporation Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
JPH1068094A (ja) 1996-06-13 1998-03-10 Samsung Electron Co Ltd 遷移金属薄膜用蝕刻ガス混合物およびこれを用いた遷移金属薄膜の蝕刻方法
US5846373A (en) 1996-06-28 1998-12-08 Lam Research Corporation Method for monitoring process endpoints in a plasma chamber and a process monitoring arrangement in a plasma chamber
US5846883A (en) 1996-07-10 1998-12-08 Cvc, Inc. Method for multi-zone high-density inductively-coupled plasma generation
US5993916A (en) 1996-07-12 1999-11-30 Applied Materials, Inc. Method for substrate processing with improved throughput and yield
US5846332A (en) 1996-07-12 1998-12-08 Applied Materials, Inc. Thermally floating pedestal collar in a chemical vapor deposition chamber
US6170428B1 (en) 1996-07-15 2001-01-09 Applied Materials, Inc. Symmetric tunable inductively coupled HDP-CVD reactor
US5781693A (en) 1996-07-24 1998-07-14 Applied Materials, Inc. Gas introduction showerhead for an RTP chamber with upper and lower transparent plates and gas flow therebetween
US5868897A (en) 1996-07-31 1999-02-09 Toyo Technologies, Inc. Device and method for processing a plasma to alter the surface of a substrate using neutrals
JPH1079372A (ja) 1996-09-03 1998-03-24 Matsushita Electric Ind Co Ltd プラズマ処理方法及びプラズマ処理装置
US5661093A (en) 1996-09-12 1997-08-26 Applied Materials, Inc. Method for the stabilization of halogen-doped films through the use of multiple sealing layers
US5888906A (en) 1996-09-16 1999-03-30 Micron Technology, Inc. Plasmaless dry contact cleaning method using interhalogen compounds
US5747373A (en) 1996-09-24 1998-05-05 Taiwan Semiconductor Manufacturing Company Ltd. Nitride-oxide sidewall spacer for salicide formation
US5846375A (en) 1996-09-26 1998-12-08 Micron Technology, Inc. Area specific temperature control for electrode plates and chucks used in semiconductor processing equipment
US5835334A (en) 1996-09-30 1998-11-10 Lam Research Variable high temperature chuck for high density plasma chemical vapor deposition
US5904827A (en) 1996-10-15 1999-05-18 Reynolds Tech Fabricators, Inc. Plating cell with rotary wiper and megasonic transducer
US6308654B1 (en) 1996-10-18 2001-10-30 Applied Materials, Inc. Inductively coupled parallel-plate plasma reactor with a conical dome
US5951776A (en) 1996-10-25 1999-09-14 Applied Materials, Inc. Self aligning lift mechanism
KR100237825B1 (ko) 1996-11-05 2000-01-15 윤종용 반도체장치 제조설비의 페디스탈
US5804259A (en) 1996-11-07 1998-09-08 Applied Materials, Inc. Method and apparatus for depositing a multilayered low dielectric constant film
US6019848A (en) 1996-11-13 2000-02-01 Applied Materials, Inc. Lid assembly for high temperature processing chamber
US6114216A (en) 1996-11-13 2000-09-05 Applied Materials, Inc. Methods for shallow trench isolation
US5935340A (en) 1996-11-13 1999-08-10 Applied Materials, Inc. Method and apparatus for gettering fluorine from chamber material surfaces
US5939831A (en) 1996-11-13 1999-08-17 Applied Materials, Inc. Methods and apparatus for pre-stabilized plasma generation for microwave clean applications
US5963840A (en) 1996-11-13 1999-10-05 Applied Materials, Inc. Methods for depositing premetal dielectric layer at sub-atmospheric and high temperature conditions
US5968587A (en) 1996-11-13 1999-10-19 Applied Materials, Inc. Systems and methods for controlling the temperature of a vapor deposition apparatus
US5812403A (en) 1996-11-13 1998-09-22 Applied Materials, Inc. Methods and apparatus for cleaning surfaces in a substrate processing system
US5935334A (en) 1996-11-13 1999-08-10 Applied Materials, Inc. Substrate processing apparatus with bottom-mounted remote plasma system
US5994209A (en) 1996-11-13 1999-11-30 Applied Materials, Inc. Methods and apparatus for forming ultra-shallow doped regions using doped silicon oxide films
US5873781A (en) 1996-11-14 1999-02-23 Bally Gaming International, Inc. Gaming machine having truly random results
US5882786A (en) 1996-11-15 1999-03-16 C3, Inc. Gemstones formed of silicon carbide with diamond coating
US6152070A (en) 1996-11-18 2000-11-28 Applied Materials, Inc. Tandem process chamber
US5844195A (en) 1996-11-18 1998-12-01 Applied Materials, Inc. Remote plasma source
US5855681A (en) 1996-11-18 1999-01-05 Applied Materials, Inc. Ultra high throughput wafer vacuum processing system
US5830805A (en) 1996-11-18 1998-11-03 Cornell Research Foundation Electroless deposition equipment or apparatus and method of performing electroless deposition
US5695810A (en) 1996-11-20 1997-12-09 Cornell Research Foundation, Inc. Use of cobalt tungsten phosphide as a barrier material for copper metallization
US5951896A (en) 1996-12-04 1999-09-14 Micro C Technologies, Inc. Rapid thermal processing heater technology and method of use
FR2756663B1 (fr) 1996-12-04 1999-02-26 Berenguer Marc Procede de traitement d'un substrat semi-conducteur comprenant une etape de traitement de surface
JPH10172792A (ja) 1996-12-05 1998-06-26 Tokyo Electron Ltd プラズマ処理装置
US6312554B1 (en) 1996-12-05 2001-11-06 Applied Materials, Inc. Apparatus and method for controlling the ratio of reactive to non-reactive ions in a semiconductor wafer processing chamber
US5843538A (en) 1996-12-09 1998-12-01 John L. Raymond Method for electroless nickel plating of metal substrates
US5953635A (en) 1996-12-19 1999-09-14 Intel Corporation Interlayer dielectric with a composite dielectric stack
US5948702A (en) 1996-12-19 1999-09-07 Texas Instruments Incorporated Selective removal of TixNy
US6120640A (en) 1996-12-19 2000-09-19 Applied Materials, Inc. Boron carbide parts and coatings in a plasma reactor
KR100234539B1 (ko) 1996-12-24 1999-12-15 윤종용 반도체장치 제조용 식각 장치
US5788825A (en) 1996-12-30 1998-08-04 Samsung Electronics Co., Ltd. Vacuum pumping system for a sputtering device
US5955037A (en) 1996-12-31 1999-09-21 Atmi Ecosys Corporation Effluent gas stream treatment system having utility for oxidation treatment of semiconductor manufacturing effluent gases
DE19700231C2 (de) 1997-01-07 2001-10-04 Geesthacht Gkss Forschung Vorrichtung zum Filtern und Trennen von Strömungsmedien
TW415970B (en) 1997-01-08 2000-12-21 Ebara Corp Vapor-phase film growth apparatus and gas ejection head
US5913147A (en) 1997-01-21 1999-06-15 Advanced Micro Devices, Inc. Method for fabricating copper-aluminum metallization
US5882424A (en) 1997-01-21 1999-03-16 Applied Materials, Inc. Plasma cleaning of a CVD or etch reactor using a low or mixed frequency excitation field
JPH10223608A (ja) 1997-02-04 1998-08-21 Sony Corp 半導体装置の製造方法
US5800621A (en) 1997-02-10 1998-09-01 Applied Materials, Inc. Plasma source for HDP-CVD chamber
US6035101A (en) 1997-02-12 2000-03-07 Applied Materials, Inc. High temperature multi-layered alloy heater assembly and related methods
US6013584A (en) 1997-02-19 2000-01-11 Applied Materials, Inc. Methods and apparatus for forming HDP-CVD PSG film used for advanced pre-metal dielectric layer applications
DE19706682C2 (de) 1997-02-20 1999-01-14 Bosch Gmbh Robert Anisotropes fluorbasiertes Plasmaätzverfahren für Silizium
US6190233B1 (en) 1997-02-20 2001-02-20 Applied Materials, Inc. Method and apparatus for improving gap-fill capability using chemical and physical etchbacks
US6479373B2 (en) 1997-02-20 2002-11-12 Infineon Technologies Ag Method of structuring layers with a polysilicon layer and an overlying metal or metal silicide layer using a three step etching process with fluorine, chlorine, bromine containing gases
US5990000A (en) 1997-02-20 1999-11-23 Applied Materials, Inc. Method and apparatus for improving gap-fill capability using chemical and physical etchbacks
US6059643A (en) 1997-02-21 2000-05-09 Aplex, Inc. Apparatus and method for polishing a flat surface using a belted polishing pad
US6328803B2 (en) 1997-02-21 2001-12-11 Micron Technology, Inc. Method and apparatus for controlling rate of pressure change in a vacuum process chamber
US6267074B1 (en) 1997-02-24 2001-07-31 Foi Corporation Plasma treatment systems
US5789300A (en) 1997-02-25 1998-08-04 Advanced Micro Devices, Inc. Method of making IGFETs in densely and sparsely populated areas of a substrate
US6376386B1 (en) 1997-02-25 2002-04-23 Fujitsu Limited Method of etching silicon nitride by a mixture of CH2 F2, CH3F or CHF3 and an inert gas
US6039834A (en) 1997-03-05 2000-03-21 Applied Materials, Inc. Apparatus and methods for upgraded substrate processing system with microwave plasma source
TW418461B (en) 1997-03-07 2001-01-11 Tokyo Electron Ltd Plasma etching device
US5850105A (en) 1997-03-21 1998-12-15 Advanced Micro Devices, Inc. Substantially planar semiconductor topography using dielectrics and chemical mechanical polish
TW376547B (en) 1997-03-27 1999-12-11 Matsushita Electric Ind Co Ltd Method and apparatus for plasma processing
US5786276A (en) 1997-03-31 1998-07-28 Applied Materials, Inc. Selective plasma etching of silicon nitride in presence of silicon or silicon oxides using mixture of CH3F or CH2F2 and CF4 and O2
US6030666A (en) 1997-03-31 2000-02-29 Lam Research Corporation Method for microwave plasma substrate heating
US6017414A (en) 1997-03-31 2000-01-25 Lam Research Corporation Method of and apparatus for detecting and controlling in situ cleaning time of vacuum processing chambers
JPH10284360A (ja) 1997-04-02 1998-10-23 Hitachi Ltd 基板温度制御装置及び方法
US5968610A (en) 1997-04-02 1999-10-19 United Microelectronics Corp. Multi-step high density plasma chemical vapor deposition process
US5866483A (en) 1997-04-04 1999-02-02 Applied Materials, Inc. Method for anisotropically etching tungsten using SF6, CHF3, and N2
US6174450B1 (en) 1997-04-16 2001-01-16 Lam Research Corporation Methods and apparatus for controlling ion energy and plasma density in a plasma processing system
US6204200B1 (en) 1997-05-05 2001-03-20 Texas Instruments Incorporated Process scheme to form controlled airgaps between interconnect lines to reduce capacitance
US6149828A (en) 1997-05-05 2000-11-21 Micron Technology, Inc. Supercritical etching compositions and method of using same
US5969422A (en) 1997-05-15 1999-10-19 Advanced Micro Devices, Inc. Plated copper interconnect structure
US6189483B1 (en) 1997-05-29 2001-02-20 Applied Materials, Inc. Process kit
US6083344A (en) 1997-05-29 2000-07-04 Applied Materials, Inc. Multi-zone RF inductively coupled source configuration
US6136685A (en) 1997-06-03 2000-10-24 Applied Materials, Inc. High deposition rate recipe for low dielectric constant films
US5937323A (en) 1997-06-03 1999-08-10 Applied Materials, Inc. Sequencing of the recipe steps for the optimal low-k HDP-CVD processing
US6706334B1 (en) 1997-06-04 2004-03-16 Tokyo Electron Limited Processing method and apparatus for removing oxide film
US5872058A (en) 1997-06-17 1999-02-16 Novellus Systems, Inc. High aspect ratio gapfill process by using HDP
US5885749A (en) 1997-06-20 1999-03-23 Clear Logic, Inc. Method of customizing integrated circuits by selective secondary deposition of layer interconnect material
US5933757A (en) 1997-06-23 1999-08-03 Lsi Logic Corporation Etch process selective to cobalt silicide for formation of integrated circuit structures
US6815633B1 (en) 1997-06-26 2004-11-09 Applied Science & Technology, Inc. Inductively-coupled toroidal plasma source
US6150628A (en) 1997-06-26 2000-11-21 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6388226B1 (en) 1997-06-26 2002-05-14 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6518155B1 (en) 1997-06-30 2003-02-11 Intel Corporation Device structure and method for reducing silicide encroachment
US6184121B1 (en) 1997-07-10 2001-02-06 International Business Machines Corporation Chip interconnect wiring structure with low dielectric constant insulator and methods for fabricating the same
US5944049A (en) 1997-07-15 1999-08-31 Applied Materials, Inc. Apparatus and method for regulating a pressure in a chamber
JPH1136076A (ja) 1997-07-16 1999-02-09 Tokyo Electron Ltd Ｃｖｄ成膜装置およびｃｖｄ成膜方法
US5982100A (en) 1997-07-28 1999-11-09 Pars, Inc. Inductively coupled plasma reactor
US6007635A (en) 1997-11-26 1999-12-28 Micro C Technologies, Inc. Platform for supporting a semiconductor substrate and method of supporting a substrate during rapid high temperature processing
US5814365A (en) 1997-08-15 1998-09-29 Micro C Technologies, Inc. Reactor and method of processing a semiconductor substate
US6090212A (en) 1997-08-15 2000-07-18 Micro C Technologies, Inc. Substrate platform for a semiconductor substrate during rapid high temperature processing and method of supporting a substrate
US5926737A (en) 1997-08-19 1999-07-20 Tokyo Electron Limited Use of TiCl4 etchback process during integrated CVD-Ti/TiN wafer processing
US6258170B1 (en) 1997-09-11 2001-07-10 Applied Materials, Inc. Vaporization and deposition apparatus
US6063688A (en) 1997-09-29 2000-05-16 Intel Corporation Fabrication of deep submicron structures and quantum wire transistors using hard-mask transistor width definition
US6161500A (en) 1997-09-30 2000-12-19 Tokyo Electron Limited Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions
US6364957B1 (en) 1997-10-09 2002-04-02 Applied Materials, Inc. Support assembly with thermal expansion compensation
US6688375B1 (en) 1997-10-14 2004-02-10 Applied Materials, Inc. Vacuum processing system having improved substrate heating and cooling
GB9722028D0 (en) 1997-10-17 1997-12-17 Shipley Company Ll C Plating of polymers
US6379575B1 (en) 1997-10-21 2002-04-30 Applied Materials, Inc. Treatment of etching chambers using activated cleaning gas
US6136693A (en) 1997-10-27 2000-10-24 Chartered Semiconductor Manufacturing Ltd. Method for planarized interconnect vias using electroless plating and CMP
US6013191A (en) 1997-10-27 2000-01-11 Advanced Refractory Technologies, Inc. Method of polishing CVD diamond films by oxygen plasma
US6063712A (en) 1997-11-25 2000-05-16 Micron Technology, Inc. Oxide etch and method of etching
US5849639A (en) 1997-11-26 1998-12-15 Lucent Technologies Inc. Method for removing etching residues and contaminants
US6136165A (en) 1997-11-26 2000-10-24 Cvc Products, Inc. Apparatus for inductively-coupled-plasma-enhanced ionized physical-vapor deposition
US6079356A (en) 1997-12-02 2000-06-27 Applied Materials, Inc. Reactor optimized for chemical vapor deposition of titanium
US6077780A (en) 1997-12-03 2000-06-20 Advanced Micro Devices, Inc. Method for filling high aspect ratio openings of an integrated circuit to minimize electromigration failure
US5976327A (en) 1997-12-12 1999-11-02 Applied Materials, Inc. Step coverage and overhang improvement by pedestal bias voltage modulation
US6143476A (en) 1997-12-12 2000-11-07 Applied Materials Inc Method for high temperature etching of patterned layers using an organic mask stack
US6083844A (en) 1997-12-22 2000-07-04 Lam Research Corporation Techniques for etching an oxide layer
US6415858B1 (en) 1997-12-31 2002-07-09 Temptronic Corporation Temperature control system for a workpiece chuck
US6406759B1 (en) 1998-01-08 2002-06-18 The University Of Tennessee Research Corporation Remote exposure of workpieces using a recirculated plasma
US6140234A (en) 1998-01-20 2000-10-31 International Business Machines Corporation Method to selectively fill recesses with conductive metal
US6074514A (en) 1998-02-09 2000-06-13 Applied Materials, Inc. High selectivity etch using an external plasma discharge
US6635578B1 (en) 1998-02-09 2003-10-21 Applied Materials, Inc Method of operating a dual chamber reactor with neutral density decoupled from ion density
US5932077A (en) 1998-02-09 1999-08-03 Reynolds Tech Fabricators, Inc. Plating cell with horizontal product load mechanism
US6340435B1 (en) 1998-02-11 2002-01-22 Applied Materials, Inc. Integrated low K dielectrics and etch stops
US6186091B1 (en) 1998-02-11 2001-02-13 Silicon Genesis Corporation Shielded platen design for plasma immersion ion implantation
US6054379A (en) 1998-02-11 2000-04-25 Applied Materials, Inc. Method of depositing a low k dielectric with organo silane
US6627532B1 (en) 1998-02-11 2003-09-30 Applied Materials, Inc. Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition
US6197688B1 (en) 1998-02-12 2001-03-06 Motorola Inc. Interconnect structure in a semiconductor device and method of formation
US6171661B1 (en) 1998-02-25 2001-01-09 Applied Materials, Inc. Deposition of copper with increased adhesion
US6892669B2 (en) 1998-02-26 2005-05-17 Anelva Corporation CVD apparatus
JP4151862B2 (ja) 1998-02-26 2008-09-17 キヤノンアネルバ株式会社 Ｃｖｄ装置
US6177222B1 (en) 1998-03-12 2001-01-23 Xerox Corporation Coated photographic papers
US6551939B2 (en) 1998-03-17 2003-04-22 Anneal Corporation Plasma surface treatment method and resulting device
US5920792A (en) 1998-03-19 1999-07-06 Winbond Electronics Corp High density plasma enhanced chemical vapor deposition process in combination with chemical mechanical polishing process for preparation and planarization of intemetal dielectric layers
US6565729B2 (en) 1998-03-20 2003-05-20 Semitool, Inc. Method for electrochemically depositing metal on a semiconductor workpiece
US6197181B1 (en) 1998-03-20 2001-03-06 Semitool, Inc. Apparatus and method for electrolytically depositing a metal on a microelectronic workpiece
US6194038B1 (en) 1998-03-20 2001-02-27 Applied Materials, Inc. Method for deposition of a conformal layer on a substrate
US6602434B1 (en) 1998-03-27 2003-08-05 Applied Materials, Inc. Process for etching oxide using hexafluorobutadiene or related fluorocarbons and manifesting a wide process window
US6203657B1 (en) 1998-03-31 2001-03-20 Lam Research Corporation Inductively coupled plasma downstream strip module
US6395150B1 (en) 1998-04-01 2002-05-28 Novellus Systems, Inc. Very high aspect ratio gapfill using HDP
KR20010042419A (ko) 1998-04-02 2001-05-25 조셉 제이. 스위니 낮은 ｋ 유전체를 에칭하는 방법
JP2976965B2 (ja) 1998-04-02 1999-11-10 日新電機株式会社 成膜方法及び成膜装置
US6198616B1 (en) 1998-04-03 2001-03-06 Applied Materials, Inc. Method and apparatus for supplying a chucking voltage to an electrostatic chuck within a semiconductor wafer processing system
US6174810B1 (en) 1998-04-06 2001-01-16 Motorola, Inc. Copper interconnect structure and method of formation
US6117245A (en) 1998-04-08 2000-09-12 Applied Materials, Inc. Method and apparatus for controlling cooling and heating fluids for a gas distribution plate
US5997649A (en) 1998-04-09 1999-12-07 Tokyo Electron Limited Stacked showerhead assembly for delivering gases and RF power to a reaction chamber
US6184489B1 (en) 1998-04-13 2001-02-06 Nec Corporation Particle-removing apparatus for a semiconductor device manufacturing apparatus and method of removing particles
US6113771A (en) 1998-04-21 2000-09-05 Applied Materials, Inc. Electro deposition chemistry
US6416647B1 (en) 1998-04-21 2002-07-09 Applied Materials, Inc. Electro-chemical deposition cell for face-up processing of single semiconductor substrates
US6077386A (en) 1998-04-23 2000-06-20 Sandia Corporation Method and apparatus for monitoring plasma processing operations
US6179924B1 (en) 1998-04-28 2001-01-30 Applied Materials, Inc. Heater for use in substrate processing apparatus to deposit tungsten
US6093594A (en) 1998-04-29 2000-07-25 Advanced Micro Devices, Inc. CMOS optimization method utilizing sacrificial sidewall spacer
US6081414A (en) 1998-05-01 2000-06-27 Applied Materials, Inc. Apparatus for improved biasing and retaining of a workpiece in a workpiece processing system
US6030881A (en) 1998-05-05 2000-02-29 Novellus Systems, Inc. High throughput chemical vapor deposition process capable of filling high aspect ratio structures
US6218288B1 (en) 1998-05-11 2001-04-17 Micron Technology, Inc. Multiple step methods for forming conformal layers
US6509283B1 (en) 1998-05-13 2003-01-21 National Semiconductor Corporation Thermal oxidation method utilizing atomic oxygen to reduce dangling bonds in silicon dioxide grown on silicon
KR100505310B1 (ko) 1998-05-13 2005-08-04 동경 엘렉트론 주식회사 성막 장치 및 방법
US6007785A (en) 1998-05-20 1999-12-28 Academia Sinica Apparatus for efficient ozone generation
US6148761A (en) 1998-06-16 2000-11-21 Applied Materials, Inc. Dual channel gas distribution plate
US6086677A (en) 1998-06-16 2000-07-11 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
US6302964B1 (en) 1998-06-16 2001-10-16 Applied Materials, Inc. One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system
KR100296137B1 (ko) 1998-06-16 2001-08-07 박종섭 보호막으로서고밀도플라즈마화학기상증착에의한절연막을갖는반도체소자제조방법
US6147009A (en) 1998-06-29 2000-11-14 International Business Machines Corporation Hydrogenated oxidized silicon carbon material
DE69929607T2 (de) 1998-06-30 2006-07-27 Semitool, Inc., Kalispell Metallisierungsstrukturen für mikroelektronische anwendungen und verfahren zur herstellung dieser strukturen
US6562128B1 (en) 2001-11-28 2003-05-13 Seh America, Inc. In-situ post epitaxial treatment process
US6037018A (en) 1998-07-01 2000-03-14 Taiwan Semiconductor Maufacturing Company Shallow trench isolation filled by high density plasma chemical vapor deposition
US6248429B1 (en) 1998-07-06 2001-06-19 Micron Technology, Inc. Metallized recess in a substrate
JP2000026975A (ja) 1998-07-09 2000-01-25 Komatsu Ltd 表面処理装置
KR100265866B1 (ko) 1998-07-11 2000-12-01 황철주 반도체 제조장치
US6182603B1 (en) 1998-07-13 2001-02-06 Applied Komatsu Technology, Inc. Surface-treated shower head for use in a substrate processing chamber
US6063683A (en) 1998-07-27 2000-05-16 Acer Semiconductor Manufacturing, Inc. Method of fabricating a self-aligned crown-shaped capacitor for high density DRAM cells
US6436816B1 (en) 1998-07-31 2002-08-20 Industrial Technology Research Institute Method of electroless plating copper on nitride barrier
US6162370A (en) 1998-08-28 2000-12-19 Ashland Inc. Composition and method for selectively etching a silicon nitride film
US6383951B1 (en) 1998-09-03 2002-05-07 Micron Technology, Inc. Low dielectric constant material for integrated circuit fabrication
US6440863B1 (en) 1998-09-04 2002-08-27 Taiwan Semiconductor Manufacturing Company Plasma etch method for forming patterned oxygen containing plasma etchable layer
US6165912A (en) 1998-09-17 2000-12-26 Cfmt, Inc. Electroless metal deposition of electronic components in an enclosable vessel
US6037266A (en) 1998-09-28 2000-03-14 Taiwan Semiconductor Manufacturing Company Method for patterning a polysilicon gate with a thin gate oxide in a polysilicon etcher
JP3725708B2 (ja) 1998-09-29 2005-12-14 株式会社東芝 半導体装置
US6170429B1 (en) 1998-09-30 2001-01-09 Lam Research Corporation Chamber liner for semiconductor process chambers
US6277733B1 (en) 1998-10-05 2001-08-21 Texas Instruments Incorporated Oxygen-free, dry plasma process for polymer removal
JP3764594B2 (ja) 1998-10-12 2006-04-12 株式会社日立製作所 プラズマ処理方法
US6180523B1 (en) 1998-10-13 2001-01-30 Industrial Technology Research Institute Copper metallization of USLI by electroless process
US6228758B1 (en) 1998-10-14 2001-05-08 Advanced Micro Devices, Inc. Method of making dual damascene conductive interconnections and integrated circuit device comprising same
US6251802B1 (en) 1998-10-19 2001-06-26 Micron Technology, Inc. Methods of forming carbon-containing layers
US6107199A (en) 1998-10-24 2000-08-22 International Business Machines Corporation Method for improving the morphology of refractory metal thin films
US20030101938A1 (en) 1998-10-27 2003-06-05 Applied Materials, Inc. Apparatus for the deposition of high dielectric constant films
JP3064268B2 (ja) 1998-10-29 2000-07-12 アプライド マテリアルズ インコーポレイテッド 成膜方法及び装置
US6176198B1 (en) 1998-11-02 2001-01-23 Applied Materials, Inc. Apparatus and method for depositing low K dielectric materials
US6462371B1 (en) 1998-11-24 2002-10-08 Micron Technology Inc. Films doped with carbon for use in integrated circuit technology
US6203863B1 (en) 1998-11-27 2001-03-20 United Microelectronics Corp. Method of gap filling
US6258220B1 (en) 1998-11-30 2001-07-10 Applied Materials, Inc. Electro-chemical deposition system
US6228233B1 (en) 1998-11-30 2001-05-08 Applied Materials, Inc. Inflatable compliant bladder assembly
US6251236B1 (en) 1998-11-30 2001-06-26 Applied Materials, Inc. Cathode contact ring for electrochemical deposition
US6015747A (en) 1998-12-07 2000-01-18 Advanced Micro Device Method of metal/polysilicon gate formation in a field effect transistor
US6242349B1 (en) 1998-12-09 2001-06-05 Advanced Micro Devices, Inc. Method of forming copper/copper alloy interconnection with reduced electromigration
US6364954B2 (en) 1998-12-14 2002-04-02 Applied Materials, Inc. High temperature chemical vapor deposition chamber
EP1014434B1 (de) 1998-12-24 2008-03-26 ATMEL Germany GmbH Verfahren zum anisotropen plasmachemischen Trockenätzen von Siliziumnitrid-Schichten mittels eines Fluor-enthaltenden Gasgemisches
DE19901210A1 (de) 1999-01-14 2000-07-27 Siemens Ag Halbleiterbauelement und Verfahren zu dessen Herstellung
US6499425B1 (en) 1999-01-22 2002-12-31 Micron Technology, Inc. Quasi-remote plasma processing method and apparatus
TW428256B (en) 1999-01-25 2001-04-01 United Microelectronics Corp Structure of conducting-wire layer and its fabricating method
JP3330554B2 (ja) 1999-01-27 2002-09-30 松下電器産業株式会社 エッチング方法
US6740247B1 (en) 1999-02-05 2004-05-25 Massachusetts Institute Of Technology HF vapor phase wafer cleaning and oxide etching
US6245669B1 (en) 1999-02-05 2001-06-12 Taiwan Semiconductor Manufacturing Company High selectivity Si-rich SiON etch-stop layer
US6010962A (en) 1999-02-12 2000-01-04 Taiwan Semiconductor Manufacturing Company Copper chemical-mechanical-polishing (CMP) dishing
US6245670B1 (en) 1999-02-19 2001-06-12 Advanced Micro Devices, Inc. Method for filling a dual damascene opening having high aspect ratio to minimize electromigration failure
TW469534B (en) 1999-02-23 2001-12-21 Matsushita Electric Ind Co Ltd Plasma processing method and apparatus
US6291282B1 (en) 1999-02-26 2001-09-18 Texas Instruments Incorporated Method of forming dual metal gate structures or CMOS devices
US6136163A (en) 1999-03-05 2000-10-24 Applied Materials, Inc. Apparatus for electro-chemical deposition with thermal anneal chamber
US6312995B1 (en) 1999-03-08 2001-11-06 Advanced Micro Devices, Inc. MOS transistor with assisted-gates and ultra-shallow “Psuedo” source and drain extensions for ultra-large-scale integration
US6197705B1 (en) 1999-03-18 2001-03-06 Chartered Semiconductor Manufacturing Ltd. Method of silicon oxide and silicon glass films deposition
US6797189B2 (en) 1999-03-25 2004-09-28 Hoiman (Raymond) Hung Enhancement of silicon oxide etch rate and nitride selectivity using hexafluorobutadiene or other heavy perfluorocarbon
US6238582B1 (en) 1999-03-30 2001-05-29 Veeco Instruments, Inc. Reactive ion beam etching method and a thin film head fabricated using the method
US6144099A (en) 1999-03-30 2000-11-07 Advanced Micro Devices, Inc. Semiconductor metalization barrier
JP2000290777A (ja) 1999-04-07 2000-10-17 Tokyo Electron Ltd ガス処理装置、バッフル部材、及びガス処理方法
US6263830B1 (en) 1999-04-12 2001-07-24 Matrix Integrated Systems, Inc. Microwave choke for remote plasma generator
US6099697A (en) 1999-04-13 2000-08-08 Applied Materials, Inc. Method of and apparatus for restoring a support surface in a semiconductor wafer processing system
US6110836A (en) 1999-04-22 2000-08-29 Applied Materials, Inc. Reactive plasma etch cleaning of high aspect ratio openings
US6450116B1 (en) 1999-04-22 2002-09-17 Applied Materials, Inc. Apparatus for exposing a substrate to plasma radicals
US6110832A (en) 1999-04-28 2000-08-29 International Business Machines Corporation Method and apparatus for slurry polishing
US6541671B1 (en) 2002-02-13 2003-04-01 The Regents Of The University Of California Synthesis of 2H- and 13C-substituted dithanes
US6490146B2 (en) 1999-05-07 2002-12-03 Applied Materials Inc. Electrostatic chuck bonded to base with a bond layer and method
JP3099066B1 (ja) 1999-05-07 2000-10-16 東京工業大学長 薄膜構造体の製造方法
US6310755B1 (en) 1999-05-07 2001-10-30 Applied Materials, Inc. Electrostatic chuck having gas cavity and method
JP3482904B2 (ja) 1999-05-10 2004-01-06 松下電器産業株式会社 プラズマ処理方法及び装置
WO2000070117A1 (en) 1999-05-14 2000-11-23 The Regents Of The University Of California Low-temperature compatible wide-pressure-range plasma flow device
US7091605B2 (en) 2001-09-21 2006-08-15 Eastman Kodak Company Highly moisture-sensitive electronic device element and method for fabrication
US6129829A (en) 1999-05-14 2000-10-10 Thompson; Donald E. Electrostatic filter for dielectric fluid
JP2000331993A (ja) 1999-05-19 2000-11-30 Mitsubishi Electric Corp プラズマ処理装置
JP3384795B2 (ja) 1999-05-26 2003-03-10 忠弘 大見 プラズマプロセス装置
US6323128B1 (en) 1999-05-26 2001-11-27 International Business Machines Corporation Method for forming Co-W-P-Au films
JP3320685B2 (ja) 1999-06-02 2002-09-03 株式会社半導体先端テクノロジーズ 微細パターン形成方法
US6916399B1 (en) 1999-06-03 2005-07-12 Applied Materials Inc Temperature controlled window with a fluid supply system
US6565661B1 (en) 1999-06-04 2003-05-20 Simplus Systems Corporation High flow conductance and high thermal conductance showerhead system and method
US20020033233A1 (en) 1999-06-08 2002-03-21 Stephen E. Savas Icp reactor having a conically-shaped plasma-generating section
US6174812B1 (en) 1999-06-08 2001-01-16 United Microelectronics Corp. Copper damascene technology for ultra large scale integration circuits
US6367413B1 (en) 1999-06-15 2002-04-09 Tokyo Electron Limited Apparatus for monitoring substrate biasing during plasma processing of a substrate
US6821571B2 (en) 1999-06-18 2004-11-23 Applied Materials Inc. Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers
US6161576A (en) 1999-06-23 2000-12-19 Mks Instruments, Inc. Integrated turbo pump and control valve system
US6110530A (en) 1999-06-25 2000-08-29 Applied Materials, Inc. CVD method of depositing copper films by using improved organocopper precursor blend
FR2795555B1 (fr) 1999-06-28 2002-12-13 France Telecom Procede de fabrication d'un dispositif semi-conducteur comprenant un empilement forme alternativement de couches de silicium et de couches de materiau dielectrique
US6277752B1 (en) 1999-06-28 2001-08-21 Taiwan Semiconductor Manufacturing Company Multiple etch method for forming residue free patterned hard mask layer
US6242360B1 (en) 1999-06-29 2001-06-05 Lam Research Corporation Plasma processing system apparatus, and method for delivering RF power to a plasma processing
US6444083B1 (en) 1999-06-30 2002-09-03 Lam Research Corporation Corrosion resistant component of semiconductor processing equipment and method of manufacturing thereof
US6245192B1 (en) 1999-06-30 2001-06-12 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6415736B1 (en) 1999-06-30 2002-07-09 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6258223B1 (en) 1999-07-09 2001-07-10 Applied Materials, Inc. In-situ electroless copper seed layer enhancement in an electroplating system
US6516815B1 (en) 1999-07-09 2003-02-11 Applied Materials, Inc. Edge bead removal/spin rinse dry (EBR/SRD) module
US6352081B1 (en) 1999-07-09 2002-03-05 Applied Materials, Inc. Method of cleaning a semiconductor device processing chamber after a copper etch process
US6351013B1 (en) 1999-07-13 2002-02-26 Advanced Micro Devices, Inc. Low-K sub spacer pocket formation for gate capacitance reduction
US6342733B1 (en) 1999-07-27 2002-01-29 International Business Machines Corporation Reduced electromigration and stressed induced migration of Cu wires by surface coating
US6281135B1 (en) 1999-08-05 2001-08-28 Axcelis Technologies, Inc. Oxygen free plasma stripping process
US6237527B1 (en) 1999-08-06 2001-05-29 Axcelis Technologies, Inc. System for improving energy purity and implant consistency, and for minimizing charge accumulation of an implanted substrate
US6235643B1 (en) 1999-08-10 2001-05-22 Applied Materials, Inc. Method for etching a trench having rounded top and bottom corners in a silicon substrate
EP1077274A1 (en) 1999-08-17 2001-02-21 Applied Materials, Inc. Lid cooling mechanism and method for optimized deposition of low-k dielectric using tri methylsilane-ozone based processes
US6602806B1 (en) 1999-08-17 2003-08-05 Applied Materials, Inc. Thermal CVD process for depositing a low dielectric constant carbon-doped silicon oxide film
EP1077480B1 (en) 1999-08-17 2008-11-12 Applied Materials, Inc. Method and apparatus to enhance properties of Si-O-C low K films
DE60041341D1 (de) 1999-08-17 2009-02-26 Tokyo Electron Ltd Gepulstes plasmabehandlungsverfahren und vorrichtung
EP1077479A1 (en) 1999-08-17 2001-02-21 Applied Materials, Inc. Post-deposition treatment to enchance properties of Si-O-C low K film
JP4220075B2 (ja) 1999-08-20 2009-02-04 東京エレクトロン株式会社 成膜方法および成膜装置
US6322716B1 (en) 1999-08-30 2001-11-27 Cypress Semiconductor Corp. Method for conditioning a plasma etch chamber
US6375748B1 (en) 1999-09-01 2002-04-23 Applied Materials, Inc. Method and apparatus for preventing edge deposition
US6441492B1 (en) 1999-09-10 2002-08-27 James A. Cunningham Diffusion barriers for copper interconnect systems
US6548414B2 (en) 1999-09-14 2003-04-15 Infineon Technologies Ag Method of plasma etching thin films of difficult to dry etch materials
JP3514186B2 (ja) 1999-09-16 2004-03-31 日新電機株式会社 薄膜形成方法及び装置
US6503843B1 (en) 1999-09-21 2003-01-07 Applied Materials, Inc. Multistep chamber cleaning and film deposition process using a remote plasma that also enhances film gap fill
US6432819B1 (en) 1999-09-27 2002-08-13 Applied Materials, Inc. Method and apparatus of forming a sputtered doped seed layer
US6153935A (en) 1999-09-30 2000-11-28 International Business Machines Corporation Dual etch stop/diffusion barrier for damascene interconnects
US6287643B1 (en) 1999-09-30 2001-09-11 Novellus Systems, Inc. Apparatus and method for injecting and modifying gas concentration of a meta-stable or atomic species in a downstream plasma reactor
US6321587B1 (en) 1999-10-15 2001-11-27 Radian International Llc Solid state fluorine sensor system and method
US6423284B1 (en) 1999-10-18 2002-07-23 Advanced Technology Materials, Inc. Fluorine abatement using steam injection in oxidation treatment of semiconductor manufacturing effluent gases
US6364949B1 (en) 1999-10-19 2002-04-02 Applied Materials, Inc. 300 mm CVD chamber design for metal-organic thin film deposition
KR100338768B1 (ko) 1999-10-25 2002-05-30 윤종용 산화막 제거방법 및 산화막 제거를 위한 반도체 제조 장치
DE29919142U1 (de) 1999-10-30 2001-03-08 Agrodyn Hochspannungstechnik GmbH, 33803 Steinhagen Plasmadüse
US6551924B1 (en) 1999-11-02 2003-04-22 International Business Machines Corporation Post metalization chem-mech polishing dielectric etch
JP3366301B2 (ja) 1999-11-10 2003-01-14 日本電気株式会社 プラズマｃｖｄ装置
US6162302A (en) 1999-11-16 2000-12-19 Agilent Technologies Method of cleaning quartz substrates using conductive solutions
US8114245B2 (en) 1999-11-26 2012-02-14 Tadahiro Ohmi Plasma etching device
US6599842B2 (en) 1999-11-29 2003-07-29 Applied Materials, Inc. Method for rounding corners and removing damaged outer surfaces of a trench
US6465350B1 (en) 1999-11-29 2002-10-15 Texas Instruments Incorporated Aluminum nitride thin film formation on integrated circuits
US6573194B2 (en) 1999-11-29 2003-06-03 Texas Instruments Incorporated Method of growing surface aluminum nitride on aluminum films with low energy barrier
US6572937B2 (en) 1999-11-30 2003-06-03 The Regents Of The University Of California Method for producing fluorinated diamond-like carbon films
US6342453B1 (en) 1999-12-03 2002-01-29 Applied Materials, Inc. Method for CVD process control for enhancing device performance
JP2001164371A (ja) 1999-12-07 2001-06-19 Nec Corp プラズマｃｖｄ装置およびプラズマｃｖｄ成膜法
DE10060002B4 (de) 1999-12-07 2016-01-28 Komatsu Ltd. Vorrichtung zur Oberflächenbehandlung
TW514996B (en) 1999-12-10 2002-12-21 Tokyo Electron Ltd Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film
JP3659101B2 (ja) 1999-12-13 2005-06-15 富士ゼロックス株式会社 窒化物半導体素子及びその製造方法
JP4695238B2 (ja) 1999-12-14 2011-06-08 東京エレクトロン株式会社 圧力制御方法
KR100385133B1 (ko) 1999-12-16 2003-05-22 엘지전자 주식회사 교환기의 셀 다중화/역다중화 시스템
US6277763B1 (en) 1999-12-16 2001-08-21 Applied Materials, Inc. Plasma processing of tungsten using a gas mixture comprising a fluorinated gas and oxygen
US6225745B1 (en) 1999-12-17 2001-05-01 Axcelis Technologies, Inc. Dual plasma source for plasma process chamber
AU2577001A (en) 1999-12-22 2001-07-03 Tokyo Electron Limited Method and system for reducing damage to substrates during plasma processing with a resonator source
US6534809B2 (en) 1999-12-22 2003-03-18 Agilent Technologies, Inc. Hardmask designs for dry etching FeRAM capacitor stacks
US6350697B1 (en) 1999-12-22 2002-02-26 Lam Research Corporation Method of cleaning and conditioning plasma reaction chamber
US6238513B1 (en) 1999-12-28 2001-05-29 International Business Machines Corporation Wafer lift assembly
US6463782B1 (en) 2000-01-13 2002-10-15 Taiwan Semiconductor Manufacturing Co., Ltd. Self-centering calibration tool and method of calibrating
US6306246B1 (en) 2000-01-14 2001-10-23 Advanced Micro Devices, Inc. Dual window optical port for improved end point detection
KR100767762B1 (ko) 2000-01-18 2007-10-17 에이에스엠 저펜 가부시기가이샤 자가 세정을 위한 원격 플라즈마 소스를 구비한 cvd 반도체 공정장치
US6772827B2 (en) 2000-01-20 2004-08-10 Applied Materials, Inc. Suspended gas distribution manifold for plasma chamber
US6477980B1 (en) 2000-01-20 2002-11-12 Applied Materials, Inc. Flexibly suspended gas distribution manifold for plasma chamber
US6656831B1 (en) 2000-01-26 2003-12-02 Applied Materials, Inc. Plasma-enhanced chemical vapor deposition of a metal nitride layer
US6494959B1 (en) 2000-01-28 2002-12-17 Applied Materials, Inc. Process and apparatus for cleaning a silicon surface
JP3723712B2 (ja) 2000-02-10 2005-12-07 株式会社日立国際電気 基板処理装置及び基板処理方法
KR100378871B1 (ko) 2000-02-16 2003-04-07 주식회사 아펙스 라디칼 증착을 위한 샤워헤드장치
US6447636B1 (en) 2000-02-16 2002-09-10 Applied Materials, Inc. Plasma reactor with dynamic RF inductive and capacitive coupling control
US6743473B1 (en) 2000-02-16 2004-06-01 Applied Materials, Inc. Chemical vapor deposition of barriers from novel precursors
US6573030B1 (en) 2000-02-17 2003-06-03 Applied Materials, Inc. Method for depositing an amorphous carbon layer
KR100545034B1 (ko) * 2000-02-21 2006-01-24 가부시끼가이샤 히다치 세이사꾸쇼 플라즈마처리장치 및 시료의 처리방법
US6350320B1 (en) 2000-02-22 2002-02-26 Applied Materials, Inc. Heater for processing chamber
US6319766B1 (en) 2000-02-22 2001-11-20 Applied Materials, Inc. Method of tantalum nitride deposition by tantalum oxide densification
US6391788B1 (en) 2000-02-25 2002-05-21 Applied Materials, Inc. Two etchant etch method
US6958098B2 (en) 2000-02-28 2005-10-25 Applied Materials, Inc. Semiconductor wafer support lift-pin assembly
JP2001319885A (ja) 2000-03-02 2001-11-16 Hitachi Kokusai Electric Inc 基板処理装置及び半導体製造方法
JP3979791B2 (ja) 2000-03-08 2007-09-19 株式会社ルネサステクノロジ 半導体装置およびその製造方法
US6537707B1 (en) 2000-03-15 2003-03-25 Agilent Technologies, Inc. Two-stage roughing and controlled deposition rates for fabricating laser ablation masks
US6528751B1 (en) 2000-03-17 2003-03-04 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma
US6900596B2 (en) 2002-07-09 2005-05-31 Applied Materials, Inc. Capacitively coupled plasma reactor with uniform radial distribution of plasma
US6527968B1 (en) 2000-03-27 2003-03-04 Applied Materials Inc. Two-stage self-cleaning silicon etch process
JP3433721B2 (ja) 2000-03-28 2003-08-04 ティーディーケイ株式会社 ドライエッチング方法及び微細加工方法
JP4056195B2 (ja) 2000-03-30 2008-03-05 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP2003529926A (ja) 2000-03-30 2003-10-07 東京エレクトロン株式会社 プラズマ処理システム内への調整可能なガス注入のための方法及び装置
DE10016340C1 (de) 2000-03-31 2001-12-06 Promos Technologies Inc Verfahren zur Herstellung von flaschenförmigen Tiefgräben zur Verwendung in Halbleitervorrichtungen
US6558564B1 (en) 2000-04-05 2003-05-06 Applied Materials Inc. Plasma energy control by inducing plasma instability
JP2001355074A (ja) 2000-04-10 2001-12-25 Sony Corp 無電解メッキ処理方法およびその装置
US7892974B2 (en) 2000-04-11 2011-02-22 Cree, Inc. Method of forming vias in silicon carbide and resulting devices and circuits
KR20010096229A (ko) 2000-04-18 2001-11-07 황 철 주 반도체 소자의 극박막 형성장치 및 그 형성방법
US6762129B2 (en) 2000-04-19 2004-07-13 Matsushita Electric Industrial Co., Ltd. Dry etching method, fabrication method for semiconductor device, and dry etching apparatus
JP2001308023A (ja) 2000-04-21 2001-11-02 Tokyo Electron Ltd 熱処理装置及び方法
US6387207B1 (en) 2000-04-28 2002-05-14 Applied Materials, Inc. Integration of remote plasma generator with semiconductor processing chamber
JP2001313282A (ja) 2000-04-28 2001-11-09 Nec Corp ドライエッチング方法
US6458718B1 (en) 2000-04-28 2002-10-01 Asm Japan K.K. Fluorine-containing materials and processes
KR100367662B1 (ko) 2000-05-02 2003-01-10 주식회사 셈테크놀러지 하이퍼서멀 중성입자 발생 장치 및 이를 채용하는 중성입자 처리 장치
JP3662472B2 (ja) 2000-05-09 2005-06-22 エム・エフエスアイ株式会社 基板表面の処理方法
EP1211725A4 (en) 2000-05-10 2003-02-26 Ibiden Co Ltd ELECTROSTATIC CHUCK
US6679981B1 (en) 2000-05-11 2004-01-20 Applied Materials, Inc. Inductive plasma loop enhancing magnetron sputtering
WO2001088971A1 (fr) 2000-05-17 2001-11-22 Tokyo Electron Limited Dispositif de traitement et procede d'entretien du dispositif, mecanisme et procede de montage d'une piece du dispositif de traitement, et mecanisme de verrouillage et procede de blocage du mecanisme de verrouillage
JP3448737B2 (ja) 2000-05-25 2003-09-22 住友重機械工業株式会社 ウエハーチャック用冷却板及びウエハーチャック
US6418874B1 (en) 2000-05-25 2002-07-16 Applied Materials, Inc. Toroidal plasma source for plasma processing
US6645585B2 (en) 2000-05-30 2003-11-11 Kyocera Corporation Container for treating with corrosive-gas and plasma and method for manufacturing the same
TW454429B (en) 2000-05-31 2001-09-11 Nanya Technology Corp Plasma generator
JP2002194547A (ja) 2000-06-08 2002-07-10 Applied Materials Inc アモルファスカーボン層の堆積方法
KR20010111058A (ko) 2000-06-09 2001-12-15 조셉 제이. 스위니 전체 영역 온도 제어 정전기 척 및 그 제조방법
US6603269B1 (en) 2000-06-13 2003-08-05 Applied Materials, Inc. Resonant chamber applicator for remote plasma source
US6509623B2 (en) 2000-06-15 2003-01-21 Newport Fab, Llc Microelectronic air-gap structures and methods of forming the same
US6391753B1 (en) 2000-06-20 2002-05-21 Advanced Micro Devices, Inc. Process for forming gate conductors
US6645550B1 (en) 2000-06-22 2003-11-11 Applied Materials, Inc. Method of treating a substrate
US6531069B1 (en) 2000-06-22 2003-03-11 International Business Machines Corporation Reactive Ion Etching chamber design for flip chip interconnections
KR100767294B1 (ko) 2000-06-23 2007-10-16 캐논 아네르바 가부시키가이샤 Ｃｖｄ장치
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
JP4371543B2 (ja) 2000-06-29 2009-11-25 日本電気株式会社 リモートプラズマｃｖｄ装置及び膜形成方法
US6303418B1 (en) 2000-06-30 2001-10-16 Chartered Semiconductor Manufacturing Ltd. Method of fabricating CMOS devices featuring dual gate structures and a high dielectric constant gate insulator layer
DE10032607B4 (de) 2000-07-07 2004-08-12 Leo Elektronenmikroskopie Gmbh Teilchenstrahlgerät mit einer im Ultrahochvakuum zu betreibenden Teilchenquelle und kaskadenförmige Pumpanordnung für ein solches Teilchenstrahlgerät
US6835278B2 (en) 2000-07-07 2004-12-28 Mattson Technology Inc. Systems and methods for remote plasma clean
US6440870B1 (en) 2000-07-12 2002-08-27 Applied Materials, Inc. Method of etching tungsten or tungsten nitride electrode gates in semiconductor structures
US6736987B1 (en) 2000-07-12 2004-05-18 Techbank Corporation Silicon etching apparatus using XeF2
US6794311B2 (en) 2000-07-14 2004-09-21 Applied Materials Inc. Method and apparatus for treating low k dielectric layers to reduce diffusion
KR100366623B1 (ko) 2000-07-18 2003-01-09 삼성전자 주식회사 반도체 기판 또는 ｌｃｄ 기판의 세정방법
EP1248293A1 (en) 2000-07-25 2002-10-09 Ibiden Co., Ltd. Ceramic substrate for semiconductor manufacture/inspection apparatus, ceramic heater, electrostatic clampless holder, and substrate for wafer prober
US6764958B1 (en) 2000-07-28 2004-07-20 Applied Materials Inc. Method of depositing dielectric films
US6939434B2 (en) 2000-08-11 2005-09-06 Applied Materials, Inc. Externally excited torroidal plasma source with magnetic control of ion distribution
US20020185226A1 (en) 2000-08-10 2002-12-12 Lea Leslie Michael Plasma processing apparatus
US6677242B1 (en) 2000-08-12 2004-01-13 Applied Materials Inc. Integrated shallow trench isolation approach
US6412437B1 (en) 2000-08-18 2002-07-02 Micron Technology, Inc. Plasma enhanced chemical vapor deposition reactor and plasma enhanced chemical vapor deposition process
US6446572B1 (en) 2000-08-18 2002-09-10 Tokyo Electron Limited Embedded plasma source for plasma density improvement
US6800830B2 (en) 2000-08-18 2004-10-05 Hitachi Kokusai Electric, Inc. Chemistry for boron diffusion barrier layer and method of application in semiconductor device fabrication
US6335288B1 (en) 2000-08-24 2002-01-01 Applied Materials, Inc. Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD
US6459066B1 (en) 2000-08-25 2002-10-01 Board Of Regents, The University Of Texas System Transmission line based inductively coupled plasma source with stable impedance
US6372657B1 (en) 2000-08-31 2002-04-16 Micron Technology, Inc. Method for selective etching of oxides
JP2002075972A (ja) 2000-09-04 2002-03-15 Hitachi Ltd 半導体装置の製造方法
JP4484345B2 (ja) 2000-09-11 2010-06-16 東京エレクトロン株式会社 半導体装置及びその製造方法
US6465366B1 (en) 2000-09-12 2002-10-15 Applied Materials, Inc. Dual frequency plasma enhanced chemical vapor deposition of silicon carbide layers
JP4717295B2 (ja) 2000-10-04 2011-07-06 株式会社半導体エネルギー研究所 ドライエッチング装置及びエッチング方法
US6461974B1 (en) 2000-10-06 2002-10-08 Lam Research Corporation High temperature tungsten etching process
DK200001497A (da) 2000-10-08 2002-04-09 Scanavo As Opbevaringsindretning for en databærer
JP2002115068A (ja) 2000-10-11 2002-04-19 Applied Materials Inc シャワーヘッド、基板処理装置および基板製造方法
KR100375102B1 (ko) 2000-10-18 2003-03-08 삼성전자주식회사 반도체 장치의 제조에서 화학 기상 증착 방법 및 이를수행하기 위한 장치
US6403491B1 (en) 2000-11-01 2002-06-11 Applied Materials, Inc. Etch method using a dielectric etch chamber with expanded process window
US6610362B1 (en) 2000-11-20 2003-08-26 Intel Corporation Method of forming a carbon doped oxide layer on a substrate
KR100382725B1 (ko) 2000-11-24 2003-05-09 삼성전자주식회사 클러스터화된 플라즈마 장치에서의 반도체소자의 제조방법
US6291348B1 (en) 2000-11-30 2001-09-18 Advanced Micro Devices, Inc. Method of forming Cu-Ca-O thin films on Cu surfaces in a chemical solution and semiconductor device thereby formed
AUPR179500A0 (en) 2000-11-30 2000-12-21 Saintech Pty Limited Ion source
US6544340B2 (en) 2000-12-08 2003-04-08 Applied Materials, Inc. Heater with detachable ceramic top plate
US6448537B1 (en) 2000-12-11 2002-09-10 Eric Anton Nering Single-wafer process chamber thermal convection processes
US6692903B2 (en) 2000-12-13 2004-02-17 Applied Materials, Inc Substrate cleaning apparatus and method
US6461972B1 (en) 2000-12-22 2002-10-08 Lsi Logic Corporation Integrated circuit fabrication dual plasma process with separate introduction of different gases into gas flow
US6537429B2 (en) 2000-12-29 2003-03-25 Lam Research Corporation Diamond coatings on reactor wall and method of manufacturing thereof
US6533910B2 (en) 2000-12-29 2003-03-18 Lam Research Corporation Carbonitride coated component of semiconductor processing equipment and method of manufacturing thereof
US6500772B2 (en) 2001-01-08 2002-12-31 International Business Machines Corporation Methods and materials for depositing films on semiconductor substrates
US20020124867A1 (en) 2001-01-08 2002-09-12 Apl Co., Ltd. Apparatus and method for surface cleaning using plasma
FR2819341B1 (fr) 2001-01-11 2003-06-27 St Microelectronics Sa Procede d'integration d'une cellule dram
US6879981B2 (en) 2001-01-16 2005-04-12 Corigin Ltd. Sharing live data with a non cooperative DBMS
US6849854B2 (en) 2001-01-18 2005-02-01 Saintech Pty Ltd. Ion source
US6358827B1 (en) 2001-01-19 2002-03-19 Taiwan Semiconductor Manufacturing Company Method of forming a squared-off, vertically oriented polysilicon spacer gate
JP4644943B2 (ja) 2001-01-23 2011-03-09 東京エレクトロン株式会社 処理装置
US6743732B1 (en) 2001-01-26 2004-06-01 Taiwan Semiconductor Manufacturing Company Organic low K dielectric etch with NH3 chemistry
US6893969B2 (en) 2001-02-12 2005-05-17 Lam Research Corporation Use of ammonia for etching organic low-k dielectrics
US6537733B2 (en) 2001-02-23 2003-03-25 Applied Materials, Inc. Method of depositing low dielectric constant silicon carbide layers
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
JP4657473B2 (ja) 2001-03-06 2011-03-23 東京エレクトロン株式会社 プラズマ処理装置
US6348407B1 (en) 2001-03-15 2002-02-19 Chartered Semiconductor Manufacturing Inc. Method to improve adhesion of organic dielectrics in dual damascene interconnects
KR100423953B1 (ko) 2001-03-19 2004-03-24 디지웨이브 테크놀러지스 주식회사 화학기상증착장치
US6886491B2 (en) 2001-03-19 2005-05-03 Apex Co. Ltd. Plasma chemical vapor deposition apparatus
JP5013353B2 (ja) 2001-03-28 2012-08-29 隆 杉野 成膜方法及び成膜装置
US7084070B1 (en) 2001-03-30 2006-08-01 Lam Research Corporation Treatment for corrosion in substrate processing
US6670278B2 (en) 2001-03-30 2003-12-30 Lam Research Corporation Method of plasma etching of silicon carbide
US20020177321A1 (en) 2001-03-30 2002-11-28 Li Si Yi Plasma etching of silicon carbide
FR2823032B1 (fr) 2001-04-03 2003-07-11 St Microelectronics Sa Resonateur electromecanique a poutre vibrante
US20020144657A1 (en) 2001-04-05 2002-10-10 Chiang Tony P. ALD reactor employing electrostatic chuck
JP3707394B2 (ja) 2001-04-06 2005-10-19 ソニー株式会社 無電解メッキ方法
US6761796B2 (en) 2001-04-06 2004-07-13 Axcelis Technologies, Inc. Method and apparatus for micro-jet enabled, low-energy ion generation transport in plasma processing
US6846401B2 (en) 2001-04-20 2005-01-25 Corus Aluminium Walzprodukte Gmbh Method of plating and pretreating aluminium workpieces
US20030019428A1 (en) 2001-04-28 2003-01-30 Applied Materials, Inc. Chemical vapor deposition chamber
EP1391140B1 (en) 2001-04-30 2012-10-10 Lam Research Corporation Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support
US6914009B2 (en) 2001-05-07 2005-07-05 Applied Materials Inc Method of making small transistor lengths
US6740601B2 (en) 2001-05-11 2004-05-25 Applied Materials Inc. HDP-CVD deposition process for filling high aspect ratio gaps
DE10222083B4 (de) 2001-05-18 2010-09-23 Samsung Electronics Co., Ltd., Suwon Isolationsverfahren für eine Halbleitervorrichtung
US20020170678A1 (en) 2001-05-18 2002-11-21 Toshio Hayashi Plasma processing apparatus
US6717189B2 (en) 2001-06-01 2004-04-06 Ebara Corporation Electroless plating liquid and semiconductor device
US6506291B2 (en) 2001-06-14 2003-01-14 Applied Materials, Inc. Substrate support with multilevel heat transfer mechanism
US20030010645A1 (en) 2001-06-14 2003-01-16 Mattson Technology, Inc. Barrier enhancement process for copper interconnects
US6573606B2 (en) 2001-06-14 2003-06-03 International Business Machines Corporation Chip to wiring interface with single metal alloy layer applied to surface of copper interconnect
US20060191637A1 (en) 2001-06-21 2006-08-31 John Zajac Etching Apparatus and Process with Thickness and Uniformity Control
US6685803B2 (en) 2001-06-22 2004-02-03 Applied Materials, Inc. Plasma treatment of processing gases
US20030000647A1 (en) 2001-06-29 2003-01-02 Applied Materials, Inc. Substrate processing chamber
US6770166B1 (en) 2001-06-29 2004-08-03 Lam Research Corp. Apparatus and method for radio frequency de-coupling and bias voltage control in a plasma reactor
KR100400044B1 (ko) 2001-07-16 2003-09-29 삼성전자주식회사 간격 조절 장치를 가지는 웨이퍼 처리 장치의 샤워 헤드
US6596599B1 (en) 2001-07-16 2003-07-22 Taiwan Semiconductor Manufacturing Company Gate stack for high performance sub-micron CMOS devices
US20030029715A1 (en) 2001-07-25 2003-02-13 Applied Materials, Inc. An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
US6846745B1 (en) 2001-08-03 2005-01-25 Novellus Systems, Inc. High-density plasma process for filling high aspect ratio structures
US6596654B1 (en) 2001-08-24 2003-07-22 Novellus Systems, Inc. Gap fill for high aspect ratio structures
JP3914452B2 (ja) 2001-08-07 2007-05-16 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
US6984288B2 (en) 2001-08-08 2006-01-10 Lam Research Corporation Plasma processor in plasma confinement region within a vacuum chamber
US7179556B2 (en) 2001-08-10 2007-02-20 Denso Corporation Fuel cell system
WO2003017359A1 (en) 2001-08-13 2003-02-27 Ebara Corporation Semiconductor device and production method therefor, and plating solution
US20030038305A1 (en) 2001-08-21 2003-02-27 Wasshuber Christoph A. Method for manufacturing and structure of transistor with low-k spacer
US6753506B2 (en) 2001-08-23 2004-06-22 Axcelis Technologies System and method of fast ambient switching for rapid thermal processing
US6762127B2 (en) 2001-08-23 2004-07-13 Yves Pierre Boiteux Etch process for dielectric materials comprising oxidized organo silane materials
WO2003018867A1 (en) 2001-08-29 2003-03-06 Applied Materials, Inc. Semiconductor processing using an efficiently coupled gas source
JP4763235B2 (ja) 2001-08-29 2011-08-31 東京エレクトロン株式会社 プラズマ処理のための装置並びに方法
US6796314B1 (en) 2001-09-07 2004-09-28 Novellus Systems, Inc. Using hydrogen gas in a post-etch radio frequency-plasma contact cleaning process
KR100441297B1 (ko) 2001-09-14 2004-07-23 주성엔지니어링(주) 리모트 플라즈마를 이용하는 ｃｃｐ형 ｐｅｃｖｄ장치
US20030054608A1 (en) 2001-09-17 2003-03-20 Vanguard International Semiconductor Corporation Method for forming shallow trench isolation in semiconductor device
US6555467B2 (en) 2001-09-28 2003-04-29 Sharp Laboratories Of America, Inc. Method of making air gaps copper interconnect
US6462372B1 (en) 2001-10-09 2002-10-08 Silicon-Based Technology Corp. Scaled stack-gate flash memory device
US6656837B2 (en) 2001-10-11 2003-12-02 Applied Materials, Inc. Method of eliminating photoresist poisoning in damascene applications
AU2002301252B2 (en) 2001-10-12 2007-12-20 Bayer Aktiengesellschaft Photovoltaic modules with a thermoplastic hot-melt adhesive layer and a process for their production
US6855906B2 (en) 2001-10-16 2005-02-15 Adam Alexander Brailove Induction plasma reactor
US20030072639A1 (en) 2001-10-17 2003-04-17 Applied Materials, Inc. Substrate support
KR100433091B1 (ko) 2001-10-23 2004-05-28 주식회사 하이닉스반도체 반도체소자의 도전배선 형성방법
JP3759895B2 (ja) 2001-10-24 2006-03-29 松下電器産業株式会社 エッチング方法
US7780785B2 (en) 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US7204886B2 (en) 2002-11-14 2007-04-17 Applied Materials, Inc. Apparatus and method for hybrid chemical processing
KR20030038396A (ko) 2001-11-01 2003-05-16 에이에스엠엘 유에스, 인코포레이티드 우선적인 화학 기상 증착 장치 및 방법
US20030087488A1 (en) 2001-11-07 2003-05-08 Tokyo Electron Limited Inductively coupled plasma source for improved process uniformity
JP4040284B2 (ja) 2001-11-08 2008-01-30 住友大阪セメント株式会社 プラズマ発生用電極内蔵型サセプタ及びその製造方法
JP2003158080A (ja) 2001-11-22 2003-05-30 Mitsubishi Electric Corp 半導体製造装置、半導体製造装置における堆積物除去方法、および半導体装置の製造方法
KR100443121B1 (ko) 2001-11-29 2004-08-04 삼성전자주식회사 반도체 공정의 수행 방법 및 반도체 공정 장치
US6794290B1 (en) 2001-12-03 2004-09-21 Novellus Systems, Inc. Method of chemical modification of structure topography
JP4392852B2 (ja) 2001-12-07 2010-01-06 東京エレクトロン株式会社 プラズマ処理装置に用いられる排気リング機構及びプラズマ処理装置
CN1254854C (zh) 2001-12-07 2006-05-03 东京毅力科创株式会社 绝缘膜氮化方法、半导体装置及其制造方法、基板处理装置和基板处理方法
US6905968B2 (en) 2001-12-12 2005-06-14 Applied Materials, Inc. Process for selectively etching dielectric layers
CN1605117B (zh) 2001-12-13 2010-05-12 应用材料股份有限公司 具有对氮化物肩部高度敏感性的自对准接触蚀刻
US6890850B2 (en) 2001-12-14 2005-05-10 Applied Materials, Inc. Method of depositing dielectric materials in damascene applications
US6605874B2 (en) 2001-12-19 2003-08-12 Intel Corporation Method of making semiconductor device using an interconnect
WO2003054912A1 (en) 2001-12-20 2003-07-03 Tokyo Electron Limited Method and apparatus comprising a magnetic filter for plasma processing a workpiece
US20030116439A1 (en) 2001-12-21 2003-06-26 International Business Machines Corporation Method for forming encapsulated metal interconnect structures in semiconductor integrated circuit devices
US20030116087A1 (en) 2001-12-21 2003-06-26 Nguyen Anh N. Chamber hardware design for titanium nitride atomic layer deposition
KR100442167B1 (ko) 2001-12-26 2004-07-30 주성엔지니어링(주) 자연산화막 제거방법
JP2003197615A (ja) 2001-12-26 2003-07-11 Tokyo Electron Ltd プラズマ処理装置およびそのクリーニング方法
KR100484258B1 (ko) 2001-12-27 2005-04-22 주식회사 하이닉스반도체 반도체 소자 제조 방법
US20030124842A1 (en) 2001-12-27 2003-07-03 Applied Materials, Inc. Dual-gas delivery system for chemical vapor deposition processes
US6828241B2 (en) 2002-01-07 2004-12-07 Applied Materials, Inc. Efficient cleaning by secondary in-situ activation of etch precursor from remote plasma source
US6770565B2 (en) 2002-01-08 2004-08-03 Applied Materials Inc. System for planarizing metal conductive layers
US6942929B2 (en) 2002-01-08 2005-09-13 Nianci Han Process chamber having component with yttrium-aluminum coating
US6827815B2 (en) 2002-01-15 2004-12-07 Applied Materials, Inc. Showerhead assembly for a processing chamber
US6730175B2 (en) 2002-01-22 2004-05-04 Applied Materials, Inc. Ceramic substrate support
US6869880B2 (en) 2002-01-24 2005-03-22 Applied Materials, Inc. In situ application of etch back for improved deposition into high-aspect-ratio features
US20040060514A1 (en) 2002-01-25 2004-04-01 Applied Materials, Inc. A Delaware Corporation Gas distribution showerhead
US6793733B2 (en) 2002-01-25 2004-09-21 Applied Materials Inc. Gas distribution showerhead
US6866746B2 (en) 2002-01-26 2005-03-15 Applied Materials, Inc. Clamshell and small volume chamber with fixed substrate support
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US7138014B2 (en) 2002-01-28 2006-11-21 Applied Materials, Inc. Electroless deposition apparatus
TWI239794B (en) 2002-01-30 2005-09-11 Alps Electric Co Ltd Plasma processing apparatus and method
US7226504B2 (en) 2002-01-31 2007-06-05 Sharp Laboratories Of America, Inc. Method to form thick relaxed SiGe layer with trench structure
US6632325B2 (en) 2002-02-07 2003-10-14 Applied Materials, Inc. Article for use in a semiconductor processing chamber and method of fabricating same
US7048814B2 (en) 2002-02-08 2006-05-23 Applied Materials, Inc. Halogen-resistant, anodized aluminum for use in semiconductor processing apparatus
US7033447B2 (en) 2002-02-08 2006-04-25 Applied Materials, Inc. Halogen-resistant, anodized aluminum for use in semiconductor processing apparatus
US20080213496A1 (en) * 2002-02-14 2008-09-04 Applied Materials, Inc. Method of coating semiconductor processing apparatus with protective yttrium-containing coatings
US7479304B2 (en) 2002-02-14 2009-01-20 Applied Materials, Inc. Gas distribution plate fabricated from a solid yttrium oxide-comprising substrate
US6821348B2 (en) 2002-02-14 2004-11-23 3M Innovative Properties Company In-line deposition processes for circuit fabrication
US6656848B1 (en) 2002-02-22 2003-12-02 Scientific Systems Research Limited Plasma chamber conditioning
JP3921234B2 (ja) 2002-02-28 2007-05-30 キヤノンアネルバ株式会社 表面処理装置及びその製造方法
US6677167B2 (en) 2002-03-04 2004-01-13 Hitachi High-Technologies Corporation Wafer processing apparatus and a wafer stage and a wafer processing method
US6646233B2 (en) 2002-03-05 2003-11-11 Hitachi High-Technologies Corporation Wafer stage for wafer processing apparatus and wafer processing method
US20060252265A1 (en) 2002-03-06 2006-11-09 Guangxiang Jin Etching high-kappa dielectric materials with good high-kappa foot control and silicon recess control
US20030168174A1 (en) 2002-03-08 2003-09-11 Foree Michael Todd Gas cushion susceptor system
US7252011B2 (en) 2002-03-11 2007-08-07 Mks Instruments, Inc. Surface area deposition trap
US7256370B2 (en) 2002-03-15 2007-08-14 Steed Technology, Inc. Vacuum thermal annealer
JP3813562B2 (ja) 2002-03-15 2006-08-23 富士通株式会社 半導体装置及びその製造方法
US20040003828A1 (en) 2002-03-21 2004-01-08 Jackson David P. Precision surface treatments using dense fluids and a plasma
US6913651B2 (en) 2002-03-22 2005-07-05 Blue29, Llc Apparatus and method for electroless deposition of materials on semiconductor substrates
JP4053326B2 (ja) 2002-03-27 2008-02-27 東芝松下ディスプレイテクノロジー株式会社 薄膜トランジスタの製造方法
US6541397B1 (en) 2002-03-29 2003-04-01 Applied Materials, Inc. Removable amorphous carbon CMP stop
US6843858B2 (en) 2002-04-02 2005-01-18 Applied Materials, Inc. Method of cleaning a semiconductor processing chamber
US20030190426A1 (en) 2002-04-03 2003-10-09 Deenesh Padhi Electroless deposition method
US6921556B2 (en) 2002-04-12 2005-07-26 Asm Japan K.K. Method of film deposition using single-wafer-processing type CVD
US6616967B1 (en) 2002-04-15 2003-09-09 Texas Instruments Incorporated Method to achieve continuous hydrogen saturation in sparingly used electroless nickel plating process
US6897532B1 (en) 2002-04-15 2005-05-24 Cypress Semiconductor Corp. Magnetic tunneling junction configuration and a method for making the same
US7013834B2 (en) 2002-04-19 2006-03-21 Nordson Corporation Plasma treatment system
KR100448714B1 (ko) 2002-04-24 2004-09-13 삼성전자주식회사 다층 나노라미네이트 구조를 갖는 반도체 장치의 절연막및 그의 형성방법
JP3773189B2 (ja) 2002-04-24 2006-05-10 独立行政法人科学技術振興機構 窓型プローブ、プラズマ監視装置、及び、プラズマ処理装置
US6794889B2 (en) 2002-04-26 2004-09-21 Agilent Technologies, Inc. Unified apparatus and method to assure probe card-to-wafer parallelism in semiconductor automatic wafer test, probe card measurement systems, and probe card manufacturing
US6528409B1 (en) 2002-04-29 2003-03-04 Advanced Micro Devices, Inc. Interconnect structure formed in porous dielectric material with minimized degradation and electromigration
US6908862B2 (en) 2002-05-03 2005-06-21 Applied Materials, Inc. HDP-CVD dep/etch/dep process for improved deposition into high aspect ratio features
JP2003324072A (ja) 2002-05-07 2003-11-14 Nec Electronics Corp 半導体製造装置
US20030215570A1 (en) 2002-05-16 2003-11-20 Applied Materials, Inc. Deposition of silicon nitride
TW538497B (en) 2002-05-16 2003-06-21 Nanya Technology Corp Method to form a bottle-shaped trench
US6825051B2 (en) 2002-05-17 2004-11-30 Asm America, Inc. Plasma etch resistant coating and process
US6500728B1 (en) 2002-05-24 2002-12-31 Taiwan Semiconductor Manufacturing Company Shallow trench isolation (STI) module to improve contact etch process window
US6673200B1 (en) 2002-05-30 2004-01-06 Lsi Logic Corporation Method of reducing process plasma damage using optical spectroscopy
US20030224217A1 (en) 2002-05-31 2003-12-04 Applied Materials, Inc. Metal nitride formation
KR100434110B1 (ko) 2002-06-04 2004-06-04 삼성전자주식회사 반도체 장치의 제조방법
US20030230385A1 (en) 2002-06-13 2003-12-18 Applied Materials, Inc. Electro-magnetic configuration for uniformity enhancement in a dual chamber plasma processing system
KR101019190B1 (ko) 2002-06-14 2011-03-04 세키스이가가쿠 고교가부시키가이샤 산화막 형성 방법 및 산화막 형성 장치
US6924191B2 (en) 2002-06-20 2005-08-02 Applied Materials, Inc. Method for fabricating a gate structure of a field effect transistor
US7311797B2 (en) 2002-06-27 2007-12-25 Lam Research Corporation Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor
DE10229037A1 (de) 2002-06-28 2004-01-29 Robert Bosch Gmbh Vorrichtung und Verfahren zur Erzeugung von Chlortrifluorid und Anlage zur Ätzung von Halbleitersubstraten mit dieser Vorrichtung
US20040072446A1 (en) 2002-07-02 2004-04-15 Applied Materials, Inc. Method for fabricating an ultra shallow junction of a field effect transistor
US6767844B2 (en) 2002-07-03 2004-07-27 Taiwan Semiconductor Manufacturing Co., Ltd Plasma chamber equipped with temperature-controlled focus ring and method of operating
US6838125B2 (en) 2002-07-10 2005-01-04 Applied Materials, Inc. Method of film deposition using activated precursor gases
US6843882B2 (en) 2002-07-15 2005-01-18 Applied Materials, Inc. Gas flow control in a wafer processing system having multiple chambers for performing same process
US7357138B2 (en) 2002-07-18 2008-04-15 Air Products And Chemicals, Inc. Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
US7988398B2 (en) 2002-07-22 2011-08-02 Brooks Automation, Inc. Linear substrate transport apparatus
US6818561B1 (en) 2002-07-30 2004-11-16 Advanced Micro Devices, Inc. Control methodology using optical emission spectroscopy derived data, system for performing same
JP2006509999A (ja) 2002-08-02 2006-03-23 イー エイ フィシオネ インストルメンツ インコーポレーテッド 顕微鏡の試料調製方法及び装置
US6921555B2 (en) 2002-08-06 2005-07-26 Tegal Corporation Method and system for sequential processing in a two-compartment chamber
US20040058293A1 (en) 2002-08-06 2004-03-25 Tue Nguyen Assembly line processing system
US20060046412A1 (en) 2002-08-06 2006-03-02 Tegal Corporation Method and system for sequential processing in a two-compartment chamber
US20060040055A1 (en) 2002-08-06 2006-02-23 Tegal Corporation Method and system for sequential processing in a two-compartment chamber
JP3861036B2 (ja) 2002-08-09 2006-12-20 三菱重工業株式会社 プラズマｃｖｄ装置
US7541270B2 (en) 2002-08-13 2009-06-02 Micron Technology, Inc. Methods for forming openings in doped silicon dioxide
US20040033677A1 (en) 2002-08-14 2004-02-19 Reza Arghavani Method and apparatus to prevent lateral oxidation in a transistor utilizing an ultra thin oxygen-diffusion barrier
US6781173B2 (en) 2002-08-29 2004-08-24 Micron Technology, Inc. MRAM sense layer area control
US6946033B2 (en) 2002-09-16 2005-09-20 Applied Materials Inc. Heated gas distribution plate for a processing chamber
JP3991315B2 (ja) 2002-09-17 2007-10-17 キヤノンアネルバ株式会社 薄膜形成装置及び方法
US7335609B2 (en) 2004-08-27 2008-02-26 Applied Materials, Inc. Gap-fill depositions introducing hydroxyl-containing precursors in the formation of silicon containing dielectric materials
US7456116B2 (en) 2002-09-19 2008-11-25 Applied Materials, Inc. Gap-fill depositions in the formation of silicon containing dielectric materials
US6905940B2 (en) 2002-09-19 2005-06-14 Applied Materials, Inc. Method using TEOS ramp-up during TEOS/ozone CVD for improved gap-fill
US7431967B2 (en) 2002-09-19 2008-10-07 Applied Materials, Inc. Limited thermal budget formation of PMD layers
US20070212850A1 (en) 2002-09-19 2007-09-13 Applied Materials, Inc. Gap-fill depositions in the formation of silicon containing dielectric materials
JP4260450B2 (ja) 2002-09-20 2009-04-30 東京エレクトロン株式会社 真空処理装置における静電チャックの製造方法
JP2006501620A (ja) * 2002-09-30 2006-01-12 東京エレクトロン株式会社 プラズマ処理システムとともに光学系を使用するための装置及び方法
US7166200B2 (en) 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate in a plasma processing system
US20070051471A1 (en) 2002-10-04 2007-03-08 Applied Materials, Inc. Methods and apparatus for stripping
US6991959B2 (en) 2002-10-10 2006-01-31 Asm Japan K.K. Method of manufacturing silicon carbide film
KR100500852B1 (ko) 2002-10-10 2005-07-12 최대규 원격 플라즈마 발생기
JP4606713B2 (ja) 2002-10-17 2011-01-05 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US6699380B1 (en) 2002-10-18 2004-03-02 Applied Materials Inc. Modular electrochemical processing system
TW587139B (en) 2002-10-18 2004-05-11 Winbond Electronics Corp Gas distribution system and method for the plasma gas in the chamber
US6802944B2 (en) 2002-10-23 2004-10-12 Applied Materials, Inc. High density plasma CVD process for gapfill into high aspect ratio features
US7628897B2 (en) 2002-10-23 2009-12-08 Applied Materials, Inc. Reactive ion etching for semiconductor device feature topography modification
US6853043B2 (en) 2002-11-04 2005-02-08 Applied Materials, Inc. Nitrogen-free antireflective coating for use with photolithographic patterning
JP2004165317A (ja) 2002-11-12 2004-06-10 Renesas Technology Corp 半導体装置およびその製造方法
KR100862658B1 (ko) 2002-11-15 2008-10-10 삼성전자주식회사 반도체 처리 시스템의 가스 주입 장치
US6861332B2 (en) 2002-11-21 2005-03-01 Intel Corporation Air gap interconnect method
US6902628B2 (en) 2002-11-25 2005-06-07 Applied Materials, Inc. Method of cleaning a coated process chamber component
US6713873B1 (en) 2002-11-27 2004-03-30 Intel Corporation Adhesion between dielectric materials
JP2004179426A (ja) 2002-11-27 2004-06-24 Tokyo Electron Ltd 基板処理装置のクリーニング方法
TW561068B (en) 2002-11-29 2003-11-11 Au Optronics Corp Nozzle head with excellent corrosion resistance for dry etching process and anti-corrosion method thereof
US7347901B2 (en) 2002-11-29 2008-03-25 Tokyo Electron Limited Thermally zoned substrate holder assembly
US7396773B1 (en) 2002-12-06 2008-07-08 Cypress Semiconductor Company Method for cleaning a gate stack
US20040118344A1 (en) 2002-12-20 2004-06-24 Lam Research Corporation System and method for controlling plasma with an adjustable coupling to ground circuit
DE10260352A1 (de) 2002-12-20 2004-07-15 Infineon Technologies Ag Verfahren zum Herstellen einer Kondensatoranordnung und Kondensatoranordnung
US20040118519A1 (en) 2002-12-20 2004-06-24 Applied Materials, Inc. Blocker plate bypass design to improve clean rate at the edge of the chamber
US6806949B2 (en) 2002-12-31 2004-10-19 Tokyo Electron Limited Monitoring material buildup on system components by optical emission
KR100964398B1 (ko) 2003-01-03 2010-06-17 삼성전자주식회사 유도결합형 안테나 및 이를 채용한 플라즈마 처리장치
US6720213B1 (en) 2003-01-15 2004-04-13 International Business Machines Corporation Low-K gate spacers by fluorine implantation
US6808748B2 (en) 2003-01-23 2004-10-26 Applied Materials, Inc. Hydrogen assisted HDP-CVD deposition process for aggressive gap-fill technology
US7316761B2 (en) 2003-02-03 2008-01-08 Applied Materials, Inc. Apparatus for uniformly etching a dielectric layer
US7205248B2 (en) 2003-02-04 2007-04-17 Micron Technology, Inc. Method of eliminating residual carbon from flowable oxide fill
US7078351B2 (en) 2003-02-10 2006-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist intensive patterning and processing
CN101457338B (zh) 2003-02-14 2011-04-27 应用材料股份有限公司 利用含氢自由基清洁自生氧化物的方法和设备
US20060137613A1 (en) 2004-01-27 2006-06-29 Shigeru Kasai Plasma generating apparatus, plasma generating method and remote plasma processing apparatus
US6982175B2 (en) 2003-02-14 2006-01-03 Unaxis Usa Inc. End point detection in time division multiplexed etch processes
US20040195208A1 (en) 2003-02-15 2004-10-07 Pavel Elizabeth G. Method and apparatus for performing hydrogen optical emission endpoint detection for photoresist strip and residue removal
US6969619B1 (en) 2003-02-18 2005-11-29 Novellus Systems, Inc. Full spectrum endpoint detection
TW200423185A (en) 2003-02-19 2004-11-01 Matsushita Electric Ind Co Ltd Method of introducing impurity
US20040163601A1 (en) 2003-02-26 2004-08-26 Masanori Kadotani Plasma processing apparatus
DE10308870B4 (de) 2003-02-28 2006-07-27 Austriamicrosystems Ag Bipolartransistor mit verbessertem Basis-Emitter-Übergang und Verfahren zur Herstellung
US6913992B2 (en) 2003-03-07 2005-07-05 Applied Materials, Inc. Method of modifying interlayer adhesion
CN100388434C (zh) 2003-03-12 2008-05-14 东京毅力科创株式会社 半导体处理用的基板保持结构和等离子体处理装置
US6951821B2 (en) 2003-03-17 2005-10-04 Tokyo Electron Limited Processing system and method for chemically treating a substrate
US20040182315A1 (en) 2003-03-17 2004-09-23 Tokyo Electron Limited Reduced maintenance chemical oxide removal (COR) processing system
JP2004296467A (ja) 2003-03-25 2004-10-21 Hitachi Kokusai Electric Inc 基板処理装置
US20040187787A1 (en) 2003-03-31 2004-09-30 Dawson Keith E. Substrate support having temperature controlled substrate support surface
US6844929B2 (en) 2003-04-09 2005-01-18 Phase Shift Technology Apparatus and method for holding and transporting thin opaque plates
US7037376B2 (en) 2003-04-11 2006-05-02 Applied Materials Inc. Backflush chamber clean
WO2004093178A1 (ja) 2003-04-11 2004-10-28 Hoya Corporation クロム系薄膜のエッチング方法及びフォトマスクの製造方法
US7126225B2 (en) 2003-04-15 2006-10-24 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for manufacturing a semiconductor wafer with reduced delamination and peeling
TWI227565B (en) 2003-04-16 2005-02-01 Au Optronics Corp Low temperature poly-Si thin film transistor and method of manufacturing the same
US6872909B2 (en) 2003-04-16 2005-03-29 Applied Science And Technology, Inc. Toroidal low-field reactive gas and plasma source having a dielectric vacuum vessel
US6942753B2 (en) 2003-04-16 2005-09-13 Applied Materials, Inc. Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition
US20040211357A1 (en) 2003-04-24 2004-10-28 Gadgil Pradad N. Method of manufacturing a gap-filled structure of a semiconductor device
JP5404984B2 (ja) 2003-04-24 2014-02-05 東京エレクトロン株式会社 プラズマモニタリング方法、プラズマモニタリング装置及びプラズマ処理装置
US6830624B2 (en) 2003-05-02 2004-12-14 Applied Materials, Inc. Blocker plate by-pass for remote plasma clean
US7008877B2 (en) 2003-05-05 2006-03-07 Unaxis Usa Inc. Etching of chromium layers on photomasks utilizing high density plasma and low frequency RF bias
US6903511B2 (en) 2003-05-06 2005-06-07 Zond, Inc. Generation of uniformly-distributed plasma
DE10320472A1 (de) 2003-05-08 2004-12-02 Kolektor D.O.O. Plasmabehandlung zur Reinigung von Kupfer oder Nickel
US6713835B1 (en) 2003-05-22 2004-03-30 International Business Machines Corporation Method for manufacturing a multi-level interconnect structure
US8580076B2 (en) 2003-05-22 2013-11-12 Lam Research Corporation Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith
KR100965758B1 (ko) 2003-05-22 2010-06-24 주성엔지니어링(주) 액정표시장치용 플라즈마 강화 화학기상증착 장치의샤워헤드 어셈블리
US7045020B2 (en) 2003-05-22 2006-05-16 Applied Materials, Inc. Cleaning a component of a process chamber
US20040237897A1 (en) 2003-05-27 2004-12-02 Hiroji Hanawa High-Frequency electrostatically shielded toroidal plasma and radical source
US8182719B2 (en) 2003-06-11 2012-05-22 Yeda Research And Development Company Ltd. Pyroelectric compound and method of its preparation
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7067432B2 (en) 2003-06-26 2006-06-27 Applied Materials, Inc. Methodology for in-situ and real-time chamber condition monitoring and process recovery during plasma processing
KR100853388B1 (ko) 2003-06-27 2008-08-21 도쿄엘렉트론가부시키가이샤 클리닝 방법 및 기판 처리 방법
US7151277B2 (en) 2003-07-03 2006-12-19 The Regents Of The University Of California Selective etching of silicon carbide films
JP4245996B2 (ja) 2003-07-07 2009-04-02 株式会社荏原製作所 無電解めっきによるキャップ膜の形成方法およびこれに用いる装置
US7368392B2 (en) 2003-07-10 2008-05-06 Applied Materials, Inc. Method of fabricating a gate structure of a field effect transistor having a metal-containing gate electrode
US6995073B2 (en) 2003-07-16 2006-02-07 Intel Corporation Air gap integration
JP3866694B2 (ja) 2003-07-30 2007-01-10 株式会社日立ハイテクノロジーズ Ｌｓｉデバイスのエッチング方法および装置
US7256134B2 (en) 2003-08-01 2007-08-14 Applied Materials, Inc. Selective etching of carbon-doped low-k dielectrics
JP4239750B2 (ja) 2003-08-13 2009-03-18 セイコーエプソン株式会社 マイクロレンズ及びマイクロレンズの製造方法、光学装置、光伝送装置、レーザプリンタ用ヘッド、並びにレーザプリンタ
US20050035455A1 (en) 2003-08-14 2005-02-17 Chenming Hu Device with low-k dielectric in close proximity thereto and its method of fabrication
US7182816B2 (en) 2003-08-18 2007-02-27 Tokyo Electron Limited Particulate reduction using temperature-controlled chamber shield
US7361865B2 (en) 2003-08-27 2008-04-22 Kyocera Corporation Heater for heating a wafer and method for fabricating the same
US7521000B2 (en) 2003-08-28 2009-04-21 Applied Materials, Inc. Process for etching photomasks
US6903031B2 (en) 2003-09-03 2005-06-07 Applied Materials, Inc. In-situ-etch-assisted HDP deposition using SiF4 and hydrogen
EP1667217A1 (en) 2003-09-03 2006-06-07 Tokyo Electron Limited Gas treatment device and heat readiting method
US7282244B2 (en) 2003-09-05 2007-10-16 General Electric Company Replaceable plate expanded thermal plasma apparatus and method
KR100518594B1 (ko) 2003-09-09 2005-10-04 삼성전자주식회사 로컬 ｓｏｎｏｓ형 비휘발성 메모리 소자 및 그 제조방법
US7030034B2 (en) 2003-09-18 2006-04-18 Micron Technology, Inc. Methods of etching silicon nitride substantially selectively relative to an oxide of aluminum
US6967405B1 (en) 2003-09-24 2005-11-22 Yongsik Yu Film for copper diffusion barrier
JP2005101141A (ja) 2003-09-24 2005-04-14 Renesas Technology Corp 半導体集積回路装置およびその製造方法
US7371688B2 (en) 2003-09-30 2008-05-13 Air Products And Chemicals, Inc. Removal of transition metal ternary and/or quaternary barrier materials from a substrate
US7071532B2 (en) 2003-09-30 2006-07-04 International Business Machines Corporation Adjustable self-aligned air gap dielectric for low capacitance wiring
KR20030083663A (ko) 2003-10-04 2003-10-30 삼영플랜트주식회사 건설폐기물로부터 시멘트 페이스트 및 모르타르가 제거된재생골재 및 모래를 생산하는 방법 및 장치
JP4399227B2 (ja) 2003-10-06 2010-01-13 株式会社フジキン チャンバの内圧制御装置及び内圧被制御式チャンバ
US20050087517A1 (en) 2003-10-09 2005-04-28 Andrew Ott Adhesion between carbon doped oxide and etch stop layers
US7408225B2 (en) 2003-10-09 2008-08-05 Asm Japan K.K. Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms
US7581511B2 (en) 2003-10-10 2009-09-01 Micron Technology, Inc. Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes
US7125792B2 (en) 2003-10-14 2006-10-24 Infineon Technologies Ag Dual damascene structure and method
US7465358B2 (en) 2003-10-15 2008-12-16 Applied Materials, Inc. Measurement techniques for controlling aspects of a electroless deposition process
US20050085031A1 (en) 2003-10-15 2005-04-21 Applied Materials, Inc. Heterogeneous activation layers formed by ionic and electroless reactions used for IC interconnect capping layers
US20070111519A1 (en) 2003-10-15 2007-05-17 Applied Materials, Inc. Integrated electroless deposition system
JP2005129666A (ja) 2003-10-22 2005-05-19 Canon Inc 処理方法及び装置
JP4306403B2 (ja) 2003-10-23 2009-08-05 東京エレクトロン株式会社 シャワーヘッド構造及びこれを用いた成膜装置
JP2005129688A (ja) 2003-10-23 2005-05-19 Hitachi Ltd 半導体装置の製造方法
US7053994B2 (en) 2003-10-28 2006-05-30 Lam Research Corporation Method and apparatus for etch endpoint detection
KR100561848B1 (ko) 2003-11-04 2006-03-16 삼성전자주식회사 헬리컬 공진기형 플라즈마 처리 장치
US7709392B2 (en) 2003-11-05 2010-05-04 Taiwan Semiconductor Manufacturing Co., Ltd. Low K dielectric surface damage control
JP4273932B2 (ja) 2003-11-07 2009-06-03 株式会社島津製作所 表面波励起プラズマｃｖｄ装置
US7205233B2 (en) 2003-11-07 2007-04-17 Applied Materials, Inc. Method for forming CoWRe alloys by electroless deposition
US20050103267A1 (en) 2003-11-14 2005-05-19 Hur Gwang H. Flat panel display manufacturing apparatus
US20050145341A1 (en) 2003-11-19 2005-07-07 Masaki Suzuki Plasma processing apparatus
JP4393844B2 (ja) 2003-11-19 2010-01-06 東京エレクトロン株式会社 プラズマ成膜装置及びプラズマ成膜方法
JP4256763B2 (ja) 2003-11-19 2009-04-22 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
KR100558925B1 (ko) 2003-11-24 2006-03-10 세메스 주식회사 웨이퍼 에지 식각 장치
US20050109276A1 (en) 2003-11-25 2005-05-26 Applied Materials, Inc. Thermal chemical vapor deposition of silicon nitride using BTBAS bis(tertiary-butylamino silane) in a single wafer chamber
US20050112876A1 (en) 2003-11-26 2005-05-26 Chih-Ta Wu Method to form a robust TiCI4 based CVD TiN film
US7431966B2 (en) 2003-12-09 2008-10-07 Micron Technology, Inc. Atomic layer deposition method of depositing an oxide on a substrate
US7081407B2 (en) 2003-12-16 2006-07-25 Lam Research Corporation Method of preventing damage to porous low-k materials during resist stripping
KR100546401B1 (ko) 2003-12-17 2006-01-26 삼성전자주식회사 자기정렬된 전하트랩층을 포함하는 반도체 메모리 소자 및그 제조방법
US7220497B2 (en) 2003-12-18 2007-05-22 Lam Research Corporation Yttria-coated ceramic components of semiconductor material processing apparatuses and methods of manufacturing the components
US20050136684A1 (en) 2003-12-23 2005-06-23 Applied Materials, Inc. Gap-fill techniques
US6958286B2 (en) 2004-01-02 2005-10-25 International Business Machines Corporation Method of preventing surface roughening during hydrogen prebake of SiGe substrates
US6893967B1 (en) 2004-01-13 2005-05-17 Advanced Micro Devices, Inc. L-shaped spacer incorporating or patterned using amorphous carbon or CVD organic materials
US6852584B1 (en) 2004-01-14 2005-02-08 Tokyo Electron Limited Method of trimming a gate electrode structure
US7361605B2 (en) 2004-01-20 2008-04-22 Mattson Technology, Inc. System and method for removal of photoresist and residues following contact etch with a stop layer present
US20060033678A1 (en) 2004-01-26 2006-02-16 Applied Materials, Inc. Integrated electroless deposition system
US7012027B2 (en) 2004-01-27 2006-03-14 Taiwan Semiconductor Manufacturing Company, Ltd. Zirconium oxide and hafnium oxide etching using halogen containing chemicals
US7064078B2 (en) 2004-01-30 2006-06-20 Applied Materials Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme
WO2005076336A1 (ja) 2004-02-09 2005-08-18 Tadahiro Ohmi 半導体装置の製造方法および絶縁膜のエッチング方法
US7291550B2 (en) 2004-02-13 2007-11-06 Chartered Semiconductor Manufacturing Ltd. Method to form a contact hole
US7015415B2 (en) 2004-02-18 2006-03-21 Dry Plasma Systems, Inc. Higher power density downstream plasma
JP4707959B2 (ja) 2004-02-20 2011-06-22 日本エー・エス・エム株式会社 シャワープレート、プラズマ処理装置及びプラズマ処理方法
US20060054280A1 (en) 2004-02-23 2006-03-16 Jang Geun-Ha Apparatus of manufacturing display substrate and showerhead assembly equipped therein
JP4698251B2 (ja) 2004-02-24 2011-06-08 アプライド マテリアルズ インコーポレイテッド 可動又は柔軟なシャワーヘッド取り付け
US20060051966A1 (en) 2004-02-26 2006-03-09 Applied Materials, Inc. In-situ chamber clean process to remove by-product deposits from chemical vapor etch chamber
US20050230350A1 (en) 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
US7780793B2 (en) 2004-02-26 2010-08-24 Applied Materials, Inc. Passivation layer formation by plasma clean process to reduce native oxide growth
US20070123051A1 (en) 2004-02-26 2007-05-31 Reza Arghavani Oxide etch with nh4-nf3 chemistry
JP4879159B2 (ja) 2004-03-05 2012-02-22 アプライド マテリアルズ インコーポレイテッド アモルファス炭素膜堆積のためのｃｖｄプロセス
US8037896B2 (en) 2004-03-09 2011-10-18 Mks Instruments, Inc. Pressure regulation in remote zones
US7196342B2 (en) 2004-03-10 2007-03-27 Cymer, Inc. Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source
US7682985B2 (en) 2004-03-17 2010-03-23 Lam Research Corporation Dual doped polysilicon and silicon germanium etch
US7109521B2 (en) 2004-03-18 2006-09-19 Cree, Inc. Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls
US7582555B1 (en) 2005-12-29 2009-09-01 Novellus Systems, Inc. CVD flowable gap fill
US7291360B2 (en) 2004-03-26 2007-11-06 Applied Materials, Inc. Chemical vapor deposition plasma process using plural ion shower grids
US7695590B2 (en) 2004-03-26 2010-04-13 Applied Materials, Inc. Chemical vapor deposition plasma reactor having plural ion shower grids
US7244474B2 (en) 2004-03-26 2007-07-17 Applied Materials, Inc. Chemical vapor deposition plasma process using an ion shower grid
US7697260B2 (en) 2004-03-31 2010-04-13 Applied Materials, Inc. Detachable electrostatic chuck
US7358192B2 (en) 2004-04-08 2008-04-15 Applied Materials, Inc. Method and apparatus for in-situ film stack processing
US7273526B2 (en) 2004-04-15 2007-09-25 Asm Japan K.K. Thin-film deposition apparatus
US8083853B2 (en) 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US7785672B2 (en) 2004-04-20 2010-08-31 Applied Materials, Inc. Method of controlling the film properties of PECVD-deposited thin films
US7018941B2 (en) 2004-04-21 2006-03-28 Applied Materials, Inc. Post treatment of low k dielectric films
TWI249774B (en) 2004-04-23 2006-02-21 Nanya Technology Corp Forming method of self-aligned contact for semiconductor device
US7115974B2 (en) 2004-04-27 2006-10-03 Taiwan Semiconductor Manfacturing Company, Ltd. Silicon oxycarbide and silicon carbonitride based materials for MOS devices
US20050238807A1 (en) 2004-04-27 2005-10-27 Applied Materials, Inc. Refurbishment of a coated chamber component
US7708859B2 (en) 2004-04-30 2010-05-04 Lam Research Corporation Gas distribution system having fast gas switching capabilities
US7449220B2 (en) 2004-04-30 2008-11-11 Oc Oerlikon Blazers Ag Method for manufacturing a plate-shaped workpiece
US20050241579A1 (en) 2004-04-30 2005-11-03 Russell Kidd Face shield to improve uniformity of blanket CVD processes
WO2005112092A2 (en) 2004-05-11 2005-11-24 Applied Materials, Inc. CARBON-DOPED-Si OXIDE ETCH USING H2 ADDITIVE IN FLUOROCARBON ETCH CHEMISTRY
US8328939B2 (en) 2004-05-12 2012-12-11 Applied Materials, Inc. Diffuser plate with slit valve compensation
US8074599B2 (en) 2004-05-12 2011-12-13 Applied Materials, Inc. Plasma uniformity control by gas diffuser curvature
US7528051B2 (en) 2004-05-14 2009-05-05 Applied Materials, Inc. Method of inducing stresses in the channel region of a transistor
KR100580584B1 (ko) 2004-05-21 2006-05-16 삼성전자주식회사 리모트 플라즈마 발생 튜브의 표면 세정 방법과 이를이용하는 기판 처리 방법 및 기판 처리 장치
US7691686B2 (en) 2004-05-21 2010-04-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7049200B2 (en) 2004-05-25 2006-05-23 Applied Materials Inc. Method for forming a low thermal budget spacer
KR100624566B1 (ko) 2004-05-31 2006-09-19 주식회사 하이닉스반도체 커패시터 상부에 유동성 절연막을 갖는 반도체소자 및 그제조 방법
US7651583B2 (en) 2004-06-04 2010-01-26 Tokyo Electron Limited Processing system and method for treating a substrate
US20050274324A1 (en) 2004-06-04 2005-12-15 Tokyo Electron Limited Plasma processing apparatus and mounting unit thereof
US20050274396A1 (en) 2004-06-09 2005-12-15 Hong Shih Methods for wet cleaning quartz surfaces of components for plasma processing chambers
US7226852B1 (en) 2004-06-10 2007-06-05 Lam Research Corporation Preventing damage to low-k materials during resist stripping
US7430496B2 (en) 2004-06-16 2008-09-30 Tokyo Electron Limited Method and apparatus for using a pressure control system to monitor a plasma processing system
US7253107B2 (en) 2004-06-17 2007-08-07 Asm International N.V. Pressure control system
US7122949B2 (en) 2004-06-21 2006-10-17 Neocera, Inc. Cylindrical electron beam generating/triggering device and method for generation of electrons
US20050284573A1 (en) 2004-06-24 2005-12-29 Egley Fred D Bare aluminum baffles for resist stripping chambers
US7220687B2 (en) 2004-06-25 2007-05-22 Applied Materials, Inc. Method to improve water-barrier performance by changing film surface morphology
US20060005856A1 (en) 2004-06-29 2006-01-12 Applied Materials, Inc. Reduction of reactive gas attack on substrate heater
US8349128B2 (en) 2004-06-30 2013-01-08 Applied Materials, Inc. Method and apparatus for stable plasma processing
US20060000802A1 (en) 2004-06-30 2006-01-05 Ajay Kumar Method and apparatus for photomask plasma etching
US7097779B2 (en) 2004-07-06 2006-08-29 Tokyo Electron Limited Processing system and method for chemically treating a TERA layer
US20060165994A1 (en) 2004-07-07 2006-07-27 General Electric Company Protective coating on a substrate and method of making thereof
JP2006049817A (ja) 2004-07-07 2006-02-16 Showa Denko Kk プラズマ処理方法およびプラズマエッチング方法
US7845309B2 (en) 2004-07-13 2010-12-07 Nordson Corporation Ultra high speed uniform plasma processing system
KR100614648B1 (ko) 2004-07-15 2006-08-23 삼성전자주식회사 반도체 소자 제조에 사용되는 기판 처리 장치
US7767561B2 (en) 2004-07-20 2010-08-03 Applied Materials, Inc. Plasma immersion ion implantation reactor having an ion shower grid
KR100584485B1 (ko) 2004-07-20 2006-05-29 동부일렉트로닉스 주식회사 반도체 소자의 금속 부식 방지 방법
US20060016783A1 (en) 2004-07-22 2006-01-26 Dingjun Wu Process for titanium nitride removal
JP4492947B2 (ja) 2004-07-23 2010-06-30 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US7217626B2 (en) 2004-07-26 2007-05-15 Texas Instruments Incorporated Transistor fabrication methods using dual sidewall spacers
JP4579611B2 (ja) 2004-07-26 2010-11-10 株式会社日立ハイテクノロジーズ ドライエッチング方法
US20060021703A1 (en) 2004-07-29 2006-02-02 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
US7381291B2 (en) 2004-07-29 2008-06-03 Asm Japan K.K. Dual-chamber plasma processing apparatus
US7806077B2 (en) 2004-07-30 2010-10-05 Amarante Technologies, Inc. Plasma nozzle array for providing uniform scalable microwave plasma generation
US7192863B2 (en) 2004-07-30 2007-03-20 Texas Instruments Incorporated Method of eliminating etch ridges in a dual damascene process
KR101309334B1 (ko) 2004-08-02 2013-09-16 비코 인스트루먼츠 인코포레이티드 화학적 기상 증착 반응기용 멀티 가스 분배 인젝터
US20060024954A1 (en) 2004-08-02 2006-02-02 Zhen-Cheng Wu Copper damascene barrier and capping layer
US20070212847A1 (en) 2004-08-04 2007-09-13 Applied Materials, Inc. Multi-step anneal of thin films for film densification and improved gap-fill
US7642171B2 (en) 2004-08-04 2010-01-05 Applied Materials, Inc. Multi-step anneal of thin films for film densification and improved gap-fill
JP4718141B2 (ja) 2004-08-06 2011-07-06 東京エレクトロン株式会社 薄膜形成方法及び薄膜形成装置
US20060032833A1 (en) 2004-08-10 2006-02-16 Applied Materials, Inc. Encapsulation of post-etch halogenic residue
US7247570B2 (en) 2004-08-19 2007-07-24 Micron Technology, Inc. Silicon pillars for vertical transistors
US20060043066A1 (en) 2004-08-26 2006-03-02 Kamp Thomas A Processes for pre-tapering silicon or silicon-germanium prior to etching shallow trenches
US20060042752A1 (en) 2004-08-30 2006-03-02 Rueger Neal R Plasma processing apparatuses and methods
WO2006026765A2 (en) 2004-09-01 2006-03-09 Axcelis Technologies, Inc. Plasma ashing process for increasing photoresist removal rate and plasma apparatus wuth cooling means
US7115525B2 (en) 2004-09-02 2006-10-03 Micron Technology, Inc. Method for integrated circuit fabrication using pitch multiplication
US7329576B2 (en) 2004-09-02 2008-02-12 Micron Technology, Inc. Double-sided container capacitors using a sacrificial layer
JP2006108629A (ja) 2004-09-10 2006-04-20 Toshiba Corp 半導体装置の製造方法
US20060292846A1 (en) 2004-09-17 2006-12-28 Pinto Gustavo A Material management in substrate processing
JP4467453B2 (ja) 2004-09-30 2010-05-26 日本碍子株式会社 セラミックス部材及びその製造方法
US7268084B2 (en) 2004-09-30 2007-09-11 Tokyo Electron Limited Method for treating a substrate
US7138767B2 (en) 2004-09-30 2006-11-21 Tokyo Electron Limited Surface wave plasma processing system and method of using
US7544251B2 (en) 2004-10-07 2009-06-09 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
US7148155B1 (en) 2004-10-26 2006-12-12 Novellus Systems, Inc. Sequential deposition/anneal film densification method
US7053003B2 (en) 2004-10-27 2006-05-30 Lam Research Corporation Photoresist conditioning with hydrogen ramping
JP2006128485A (ja) 2004-10-29 2006-05-18 Asm Japan Kk 半導体処理装置
US20060093756A1 (en) 2004-11-03 2006-05-04 Nagarajan Rajagopalan High-power dielectric seasoning for stable wafer-to-wafer thickness uniformity of dielectric CVD films
US20060097397A1 (en) 2004-11-10 2006-05-11 Russell Stephen W Method for forming a dual layer, low resistance metallization during the formation of a semiconductor device
US7618515B2 (en) 2004-11-15 2009-11-17 Tokyo Electron Limited Focus ring, plasma etching apparatus and plasma etching method
EP1662546A1 (en) 2004-11-25 2006-05-31 The European Community, represented by the European Commission Inductively coupled plasma processing apparatus
US7722737B2 (en) 2004-11-29 2010-05-25 Applied Materials, Inc. Gas distribution system for improved transient phase deposition
US7052553B1 (en) 2004-12-01 2006-05-30 Lam Research Corporation Wet cleaning of electrostatic chucks
US7256121B2 (en) 2004-12-02 2007-08-14 Texas Instruments Incorporated Contact resistance reduction by new barrier stack process
FR2878913B1 (fr) 2004-12-03 2007-01-19 Cit Alcatel Controle des pressions partielles de gaz pour optimisation de procede
US20060118240A1 (en) 2004-12-03 2006-06-08 Applied Science And Technology, Inc. Methods and apparatus for downstream dissociation of gases
JP2006193822A (ja) 2004-12-16 2006-07-27 Sharp Corp めっき装置、めっき方法、半導体装置、及び半導体装置の製造方法
US20060130971A1 (en) 2004-12-21 2006-06-22 Applied Materials, Inc. Apparatus for generating plasma by RF power
JP2006179693A (ja) 2004-12-22 2006-07-06 Shin Etsu Chem Co Ltd ヒータ付き静電チャック
JP4191137B2 (ja) 2004-12-24 2008-12-03 東京エレクトロン株式会社 基板処理装置のクリーニング方法
US7365016B2 (en) 2004-12-27 2008-04-29 Dalsa Semiconductor Inc. Anhydrous HF release of process for MEMS devices
KR100653722B1 (ko) 2005-01-05 2006-12-05 삼성전자주식회사 저유전막을 갖는 반도체소자의 제조방법
US7465953B1 (en) 2005-01-07 2008-12-16 Board Of Regents, The University Of Texas System Positioning of nanoparticles and fabrication of single election devices
US7253123B2 (en) 2005-01-10 2007-08-07 Applied Materials, Inc. Method for producing gate stack sidewall spacers
KR100610019B1 (ko) 2005-01-11 2006-08-08 삼성전자주식회사 플라즈마 분배장치 및 이를 구비하는 건식 스트리핑 장치
US20060162661A1 (en) 2005-01-22 2006-07-27 Applied Materials, Inc. Mixing energized and non-energized gases for silicon nitride deposition
US7829243B2 (en) 2005-01-27 2010-11-09 Applied Materials, Inc. Method for plasma etching a chromium layer suitable for photomask fabrication
JP4601439B2 (ja) * 2005-02-01 2010-12-22 株式会社日立ハイテクノロジーズ プラズマ処理装置
GB0502149D0 (en) 2005-02-02 2005-03-09 Boc Group Inc Method of operating a pumping system
US7341943B2 (en) 2005-02-08 2008-03-11 Taiwan Semiconductor Manufacturing Co., Ltd. Post etch copper cleaning using dry plasma
US20060183270A1 (en) 2005-02-14 2006-08-17 Tessera, Inc. Tools and methods for forming conductive bumps on microelectronic elements
JP4475136B2 (ja) 2005-02-18 2010-06-09 東京エレクトロン株式会社 処理システム、前処理装置及び記憶媒体
US7344912B1 (en) 2005-03-01 2008-03-18 Spansion Llc Method for patterning electrically conducting poly(phenyl acetylene) and poly(diphenyl acetylene)
JP4506677B2 (ja) 2005-03-11 2010-07-21 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体
JP2006261217A (ja) 2005-03-15 2006-09-28 Canon Anelva Corp 薄膜形成方法
JP4518986B2 (ja) 2005-03-17 2010-08-04 東京エレクトロン株式会社 大気搬送室、被処理体の処理後搬送方法、プログラム及び記憶媒体
WO2006102180A2 (en) 2005-03-18 2006-09-28 Applied Materials, Inc. Contact metallization methods and processes
US7651934B2 (en) 2005-03-18 2010-01-26 Applied Materials, Inc. Process for electroless copper deposition
WO2006102318A2 (en) 2005-03-18 2006-09-28 Applied Materials, Inc. Electroless deposition process on a contact containing silicon or silicide
US20060210723A1 (en) 2005-03-21 2006-09-21 Tokyo Electron Limited Plasma enhanced atomic layer deposition system and method
US7435454B2 (en) 2005-03-21 2008-10-14 Tokyo Electron Limited Plasma enhanced atomic layer deposition system and method
KR100610465B1 (ko) 2005-03-25 2006-08-08 주식회사 하이닉스반도체 반도체 소자의 제조 방법
US7442274B2 (en) 2005-03-28 2008-10-28 Tokyo Electron Limited Plasma etching method and apparatus therefor
US20060215347A1 (en) 2005-03-28 2006-09-28 Tokyo Electron Limited Processing apparatus and recording medium
KR100689826B1 (ko) 2005-03-29 2007-03-08 삼성전자주식회사 불소 함유된 화학적 식각 가스를 사용하는 고밀도 플라즈마화학기상증착 방법들 및 이를 채택하여 반도체 소자를제조하는 방법들
JP4860167B2 (ja) 2005-03-30 2012-01-25 東京エレクトロン株式会社 ロードロック装置，処理システム及び処理方法
US7789962B2 (en) 2005-03-31 2010-09-07 Tokyo Electron Limited Device and method for controlling temperature of a mounting table, a program therefor, and a processing apparatus including same
US20060228889A1 (en) 2005-03-31 2006-10-12 Edelberg Erik A Methods of removing resist from substrates in resist stripping chambers
US7288482B2 (en) 2005-05-04 2007-10-30 International Business Machines Corporation Silicon nitride etching methods
US7431856B2 (en) 2005-05-18 2008-10-07 National Research Council Of Canada Nano-tip fabrication by spatially controlled etching
KR100731164B1 (ko) 2005-05-19 2007-06-20 주식회사 피에조닉스 샤워헤드를 구비한 화학기상 증착 방법 및 장치
US20060266288A1 (en) 2005-05-27 2006-11-30 Applied Materials, Inc. High plasma utilization for remote plasma clean
JP4853857B2 (ja) 2005-06-15 2012-01-11 東京エレクトロン株式会社 基板の処理方法，コンピュータ読み取り可能な記録媒体及び基板処理装置
KR100676203B1 (ko) 2005-06-21 2007-01-30 삼성전자주식회사 반도체 설비용 정전 척의 냉각 장치
US20060286774A1 (en) 2005-06-21 2006-12-21 Applied Materials. Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
US20090194233A1 (en) 2005-06-23 2009-08-06 Tokyo Electron Limited Component for semicondutor processing apparatus and manufacturing method thereof
JP4554461B2 (ja) 2005-07-26 2010-09-29 株式会社日立ハイテクノロジーズ 半導体装置の製造方法
US8535443B2 (en) 2005-07-27 2013-09-17 Applied Materials, Inc. Gas line weldment design and process for CVD aluminum
US9214909B2 (en) 2005-07-29 2015-12-15 Mks Instruments, Inc. High reliability RF generator architecture
US8366829B2 (en) 2005-08-05 2013-02-05 Advanced Micro-Fabrication Equipment, Inc. Asia Multi-station decoupled reactive ion etch chamber
US8709162B2 (en) 2005-08-16 2014-04-29 Applied Materials, Inc. Active cooling substrate support
DE102006038885B4 (de) 2005-08-24 2013-10-10 Wonik Ips Co., Ltd. Verfahren zum Abscheiden einer Ge-Sb-Te-Dünnschicht
US20070056925A1 (en) 2005-09-09 2007-03-15 Lam Research Corporation Selective etch of films with high dielectric constant with H2 addition
US20070071888A1 (en) 2005-09-21 2007-03-29 Arulkumar Shanmugasundram Method and apparatus for forming device features in an integrated electroless deposition system
US20070066084A1 (en) 2005-09-21 2007-03-22 Cory Wajda Method and system for forming a layer with controllable spstial variation
JP4823628B2 (ja) 2005-09-26 2011-11-24 東京エレクトロン株式会社 基板処理方法および記録媒体
DE102005047081B4 (de) 2005-09-30 2019-01-31 Robert Bosch Gmbh Verfahren zum plasmalosen Ätzen von Silizium mit dem Ätzgas ClF3 oder XeF2
US8102123B2 (en) 2005-10-04 2012-01-24 Topanga Technologies, Inc. External resonator electrode-less plasma lamp and method of exciting with radio-frequency energy
US7438534B2 (en) 2005-10-07 2008-10-21 Edwards Vacuum, Inc. Wide range pressure control using turbo pump
KR100703014B1 (ko) 2005-10-26 2007-04-06 삼성전자주식회사 실리콘 산화물 식각액 및 이를 이용한 반도체 소자의 제조 방법
US7884032B2 (en) 2005-10-28 2011-02-08 Applied Materials, Inc. Thin film deposition
US20070099806A1 (en) 2005-10-28 2007-05-03 Stewart Michael P Composition and method for selectively removing native oxide from silicon-containing surfaces
EP1780779A3 (en) 2005-10-28 2008-06-11 Interuniversitair Microelektronica Centrum ( Imec) A plasma for patterning advanced gate stacks
US7696101B2 (en) 2005-11-01 2010-04-13 Micron Technology, Inc. Process for increasing feature density during the manufacture of a semiconductor device
US7850779B2 (en) 2005-11-04 2010-12-14 Applied Materisals, Inc. Apparatus and process for plasma-enhanced atomic layer deposition
US20070107750A1 (en) 2005-11-14 2007-05-17 Sawin Herbert H Method of using NF3 for removing surface deposits from the interior of chemical vapor deposition chambers
JP4918778B2 (ja) 2005-11-16 2012-04-18 株式会社日立製作所 半導体集積回路装置の製造方法
US20070117396A1 (en) 2005-11-22 2007-05-24 Dingjun Wu Selective etching of titanium nitride with xenon difluoride
US7704887B2 (en) 2005-11-22 2010-04-27 Applied Materials, Inc. Remote plasma pre-clean with low hydrogen pressure
US7862683B2 (en) 2005-12-02 2011-01-04 Tokyo Electron Limited Chamber dry cleaning
KR100663668B1 (ko) 2005-12-07 2007-01-09 주식회사 뉴파워 프라즈마 복수의 기판을 병렬 배치 처리하기 위한 플라즈마 처리장치
US7662723B2 (en) 2005-12-13 2010-02-16 Lam Research Corporation Methods and apparatus for in-situ substrate processing
US7405160B2 (en) 2005-12-13 2008-07-29 Tokyo Electron Limited Method of making semiconductor device
JP4344949B2 (ja) 2005-12-27 2009-10-14 セイコーエプソン株式会社 シャワーヘッド、シャワーヘッドを含む成膜装置、ならびに強誘電体膜の製造方法
US7449538B2 (en) 2005-12-30 2008-11-11 Hynix Semiconductor Inc. Hard mask composition and method for manufacturing semiconductor device
US8088248B2 (en) 2006-01-11 2012-01-03 Lam Research Corporation Gas switching section including valves having different flow coefficients for gas distribution system
JP2007191792A (ja) 2006-01-19 2007-08-02 Atto Co Ltd ガス分離型シャワーヘッド
KR100712727B1 (ko) 2006-01-26 2007-05-04 주식회사 아토 절연체를 이용한 샤워헤드
US20070169703A1 (en) 2006-01-23 2007-07-26 Brent Elliot Advanced ceramic heater for substrate processing
US8173228B2 (en) 2006-01-27 2012-05-08 Applied Materials, Inc. Particle reduction on surfaces of chemical vapor deposition processing apparatus
US7494545B2 (en) 2006-02-03 2009-02-24 Applied Materials, Inc. Epitaxial deposition process and apparatus
KR100785164B1 (ko) 2006-02-04 2007-12-11 위순임 다중 출력 원격 플라즈마 발생기 및 이를 구비한 기판 처리시스템
KR100678696B1 (ko) 2006-02-08 2007-02-06 주식회사 뉴파워 프라즈마 환형 플라즈마를 형성하기 위한 페라이트 코어 조립체를구비한 자기 강화된 플라즈마 소오스
KR100752622B1 (ko) 2006-02-17 2007-08-30 한양대학교 산학협력단 원거리 플라즈마 발생장치
CN101378850A (zh) 2006-02-21 2009-03-04 应用材料股份有限公司 加强用于介电膜层的远程等离子体源清洁
US20070207275A1 (en) 2006-02-21 2007-09-06 Applied Materials, Inc. Enhancement of remote plasma source clean for dielectric films
US7713430B2 (en) 2006-02-23 2010-05-11 Micron Technology, Inc. Using positive DC offset of bias RF to neutralize charge build-up of etch features
US20090069360A1 (en) 2006-03-16 2009-03-12 David Bryant Batt Organic Compounds
US7977245B2 (en) 2006-03-22 2011-07-12 Applied Materials, Inc. Methods for etching a dielectric barrier layer with high selectivity
US7381651B2 (en) * 2006-03-22 2008-06-03 Axcelis Technologies, Inc. Processes for monitoring the levels of oxygen and/or nitrogen species in a substantially oxygen and nitrogen-free plasma ashing process
US8343280B2 (en) 2006-03-28 2013-01-01 Tokyo Electron Limited Multi-zone substrate temperature control system and method of operating
WO2007112454A2 (en) 2006-03-28 2007-10-04 Stratusys Inc. Apparatus and method for processing substrates using one or more vacuum transfer chamber units
US7743731B2 (en) 2006-03-30 2010-06-29 Tokyo Electron Limited Reduced contaminant gas injection system and method of using
US7906032B2 (en) 2006-03-31 2011-03-15 Tokyo Electron Limited Method for conditioning a process chamber
US7780865B2 (en) 2006-03-31 2010-08-24 Applied Materials, Inc. Method to improve the step coverage and pattern loading for dielectric films
JP5042517B2 (ja) 2006-04-10 2012-10-03 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN100539080C (zh) 2006-04-12 2009-09-09 中芯国际集成电路制造(上海)有限公司 通过自对准形成多晶硅浮栅结构的方法
US20070243714A1 (en) 2006-04-18 2007-10-18 Applied Materials, Inc. Method of controlling silicon-containing polymer build up during etching by using a periodic cleaning step
US7488685B2 (en) 2006-04-25 2009-02-10 Micron Technology, Inc. Process for improving critical dimension uniformity of integrated circuit arrays
US8226769B2 (en) 2006-04-27 2012-07-24 Applied Materials, Inc. Substrate support with electrostatic chuck having dual temperature zones
US20070254169A1 (en) 2006-04-28 2007-11-01 Kamins Theodore I Structures including organic self-assembled monolayers and methods of making the structures
US7297564B1 (en) 2006-05-02 2007-11-20 Sharp Laboratories Of America, Inc. Fabrication of vertical sidewalls on (110) silicon substrates for use in Si/SiGe photodetectors
US7601607B2 (en) 2006-05-15 2009-10-13 Chartered Semiconductor Manufacturing, Ltd. Protruded contact and insertion of inter-layer-dielectric material to match damascene hardmask to improve undercut for low-k interconnects
JP5578389B2 (ja) 2006-05-16 2014-08-27 Ｎｌｔテクノロジー株式会社 積層膜パターン形成方法及びゲート電極形成方法
US20070266946A1 (en) 2006-05-22 2007-11-22 Byung-Chul Choi Semiconductor device manufacturing apparatus and method of using the same
JP5119609B2 (ja) 2006-05-25 2013-01-16 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体、並びに半導体装置
US7790634B2 (en) 2006-05-30 2010-09-07 Applied Materials, Inc Method for depositing and curing low-k films for gapfill and conformal film applications
US20070289534A1 (en) 2006-05-30 2007-12-20 Applied Materials, Inc. Process chamber for dielectric gapfill
US7825038B2 (en) 2006-05-30 2010-11-02 Applied Materials, Inc. Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen
US20070277734A1 (en) 2006-05-30 2007-12-06 Applied Materials, Inc. Process chamber for dielectric gapfill
US20070281106A1 (en) 2006-05-30 2007-12-06 Applied Materials, Inc. Process chamber for dielectric gapfill
US7665951B2 (en) 2006-06-02 2010-02-23 Applied Materials, Inc. Multiple slot load lock chamber and method of operation
JP5069427B2 (ja) 2006-06-13 2012-11-07 北陸成型工業株式会社 シャワープレート、並びにそれを用いたプラズマ処理装置、プラズマ処理方法及び電子装置の製造方法
US7777152B2 (en) 2006-06-13 2010-08-17 Applied Materials, Inc. High AC current high RF power AC-RF decoupling filter for plasma reactor heated electrostatic chuck
WO2007144892A2 (en) 2006-06-15 2007-12-21 Yeda Research And Development Company Ltd. Super-pyroelectric films and process of their preparation
US7932181B2 (en) 2006-06-20 2011-04-26 Lam Research Corporation Edge gas injection for critical dimension uniformity improvement
US8232176B2 (en) 2006-06-22 2012-07-31 Applied Materials, Inc. Dielectric deposition and etch back processes for bottom up gapfill
US20070296967A1 (en) 2006-06-27 2007-12-27 Bhupendra Kumra Gupta Analysis of component for presence, composition and/or thickness of coating
US8114781B2 (en) 2006-06-29 2012-02-14 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
US7416989B1 (en) 2006-06-30 2008-08-26 Novellus Systems, Inc. Adsorption based material removal process
US7618889B2 (en) 2006-07-18 2009-11-17 Applied Materials, Inc. Dual damascene fabrication with low k materials
US9275887B2 (en) 2006-07-20 2016-03-01 Applied Materials, Inc. Substrate processing with rapid temperature gradient control
US20080029484A1 (en) 2006-07-25 2008-02-07 Applied Materials, Inc. In-situ process diagnostics of in-film aluminum during plasma deposition
US20080029032A1 (en) 2006-08-01 2008-02-07 Sun Jennifer Y Substrate support with protective layer for plasma resistance
GB0615343D0 (en) 2006-08-02 2006-09-13 Point 35 Microstructures Ltd Improved etch process
GB0616131D0 (en) 2006-08-14 2006-09-20 Oxford Instr Plasma Technology Surface processing apparatus
US20080045030A1 (en) 2006-08-15 2008-02-21 Shigeru Tahara Substrate processing method, substrate processing system and storage medium
US20080124937A1 (en) 2006-08-16 2008-05-29 Songlin Xu Selective etching method and apparatus
KR100761757B1 (ko) 2006-08-17 2007-09-28 삼성전자주식회사 막 형성 방법
KR100818708B1 (ko) 2006-08-18 2008-04-01 주식회사 하이닉스반도체 표면 세정을 포함하는 반도체소자 제조방법
US8110787B1 (en) 2006-08-23 2012-02-07 ON Semiconductor Trading, Ltd Image sensor with a reflective waveguide
US7575007B2 (en) 2006-08-23 2009-08-18 Applied Materials, Inc. Chamber recovery after opening barrier over copper
US20080063810A1 (en) 2006-08-23 2008-03-13 Applied Materials, Inc. In-situ process state monitoring of chamber
US7611980B2 (en) 2006-08-30 2009-11-03 Micron Technology, Inc. Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures
US7452766B2 (en) 2006-08-31 2008-11-18 Micron Technology, Inc. Finned memory cells and the fabrication thereof
US7297894B1 (en) 2006-09-25 2007-11-20 Tokyo Electron Limited Method for multi-step temperature control of a substrate
US20080075668A1 (en) 2006-09-27 2008-03-27 Goldstein Alan H Security Device Using Reversibly Self-Assembling Systems
CN101153396B (zh) 2006-09-30 2010-06-09 中芯国际集成电路制造(上海)有限公司 等离子刻蚀方法
US7589950B2 (en) 2006-10-13 2009-09-15 Applied Materials, Inc. Detachable electrostatic chuck having sealing assembly
JP2008103645A (ja) 2006-10-20 2008-05-01 Toshiba Corp 半導体装置の製造方法
US7655571B2 (en) 2006-10-26 2010-02-02 Applied Materials, Inc. Integrated method and apparatus for efficient removal of halogen residues from etched substrates
US20080099147A1 (en) 2006-10-26 2008-05-01 Nyi Oo Myo Temperature controlled multi-gas distribution assembly
JP2008109043A (ja) 2006-10-27 2008-05-08 Oki Electric Ind Co Ltd 半導体装置の製造方法および半導体装置
US8002946B2 (en) 2006-10-30 2011-08-23 Applied Materials, Inc. Mask etch plasma reactor with cathode providing a uniform distribution of etch rate
US20080102640A1 (en) 2006-10-30 2008-05-01 Applied Materials, Inc. Etching oxide with high selectivity to titanium nitride
US7943005B2 (en) 2006-10-30 2011-05-17 Applied Materials, Inc. Method and apparatus for photomask plasma etching
US7880232B2 (en) 2006-11-01 2011-02-01 Micron Technology, Inc. Processes and apparatus having a semiconductor fin
US7725974B2 (en) 2006-11-02 2010-06-01 Hughes Randall L Shoe and foot cleaning and disinfecting system
US20080124944A1 (en) 2006-11-28 2008-05-29 Applied Materials, Inc. Gas baffle and distributor for semiconductor processing chamber
US7740706B2 (en) 2006-11-28 2010-06-22 Applied Materials, Inc. Gas baffle and distributor for semiconductor processing chamber
US20080193673A1 (en) 2006-12-05 2008-08-14 Applied Materials, Inc. Method of processing a workpiece using a mid-chamber gas distribution plate, tuned plasma flow control grid and electrode
US7939422B2 (en) 2006-12-07 2011-05-10 Applied Materials, Inc. Methods of thin film process
KR20090094368A (ko) 2006-12-11 2009-09-04 어플라이드 머티어리얼스, 인코포레이티드 건식 포토레지스트 스트립핑 프로세스 및 장치
US8702866B2 (en) 2006-12-18 2014-04-22 Lam Research Corporation Showerhead electrode assembly with gas flow modification for extended electrode life
TWM318795U (en) 2006-12-18 2007-09-11 Lighthouse Technology Co Ltd Package structure
US20100059889A1 (en) 2006-12-20 2010-03-11 Nxp, B.V. Adhesion of diffusion barrier on copper-containing interconnect element
US7922863B2 (en) 2006-12-22 2011-04-12 Applied Materials, Inc. Apparatus for integrated gas and radiation delivery
JP5229711B2 (ja) 2006-12-25 2013-07-03 国立大学法人名古屋大学 パターン形成方法、および半導体装置の製造方法
US20080156631A1 (en) 2006-12-27 2008-07-03 Novellus Systems, Inc. Methods of Producing Plasma in a Container
JP2008163430A (ja) 2006-12-28 2008-07-17 Jtekt Corp 高耐食性部材およびその製造方法
US20080157225A1 (en) 2006-12-29 2008-07-03 Suman Datta SRAM and logic transistors with variable height multi-gate transistor architecture
KR20080063988A (ko) 2007-01-03 2008-07-08 삼성전자주식회사 중성빔을 이용한 식각장치
US8097105B2 (en) 2007-01-11 2012-01-17 Lam Research Corporation Extending lifetime of yttrium oxide as a plasma chamber material
JP5168907B2 (ja) 2007-01-15 2013-03-27 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法及び記憶媒体
JP4421618B2 (ja) 2007-01-17 2010-02-24 東京エレクトロン株式会社 フィン型電界効果トランジスタの製造方法
US7728364B2 (en) 2007-01-19 2010-06-01 International Business Machines Corporation Enhanced mobility CMOS transistors with a V-shaped channel with self-alignment to shallow trench isolation
JP4299863B2 (ja) 2007-01-22 2009-07-22 エルピーダメモリ株式会社 半導体装置の製造方法
US8444926B2 (en) 2007-01-30 2013-05-21 Applied Materials, Inc. Processing chamber with heated chamber liner
JP5048352B2 (ja) 2007-01-31 2012-10-17 東京エレクトロン株式会社 基板処理方法及び基板処理装置
KR100878015B1 (ko) 2007-01-31 2009-01-13 삼성전자주식회사 산화물 제거 방법 및 이를 이용한 트렌치 매립 방법
US7789993B2 (en) 2007-02-02 2010-09-07 Applied Materials, Inc. Internal balanced coil for inductively coupled high density plasma processing chamber
US20080188090A1 (en) 2007-02-02 2008-08-07 Applied Materials, Inc. Internal balanced coil for inductively coupled high density plasma processing chamber
US7572647B2 (en) 2007-02-02 2009-08-11 Applied Materials, Inc. Internal balanced coil for inductively coupled high density plasma processing chamber
KR100843236B1 (ko) 2007-02-06 2008-07-03 삼성전자주식회사 더블 패터닝 공정을 이용하는 반도체 소자의 미세 패턴형성 방법
JP2008205219A (ja) 2007-02-20 2008-09-04 Masato Toshima シャワーヘッドおよびこれを用いたｃｖｄ装置
US20080202892A1 (en) 2007-02-27 2008-08-28 Smith John M Stacked process chambers for substrate vacuum processing tool
CN100577866C (zh) 2007-02-27 2010-01-06 中微半导体设备(上海)有限公司 应用于等离子体反应室中的气体喷头组件、其制造方法及其翻新再利用的方法
US20080216901A1 (en) 2007-03-06 2008-09-11 Mks Instruments, Inc. Pressure control for vacuum processing system
US7977249B1 (en) 2007-03-07 2011-07-12 Novellus Systems, Inc. Methods for removing silicon nitride and other materials during fabrication of contacts
US20080216958A1 (en) 2007-03-07 2008-09-11 Novellus Systems, Inc. Plasma Reaction Apparatus Having Pre-Seasoned Showerheads and Methods for Manufacturing the Same
KR101526615B1 (ko) 2007-03-12 2015-06-05 도쿄엘렉트론가부시키가이샤 처리 균일성 제어 방법, 플라즈마 처리 장치 및 기판 국소 변형 방법
JP4833890B2 (ja) 2007-03-12 2011-12-07 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ分布補正方法
KR100853485B1 (ko) 2007-03-19 2008-08-21 주식회사 하이닉스반도체 리세스 게이트를 갖는 반도체 소자의 제조 방법
US20080233709A1 (en) 2007-03-22 2008-09-25 Infineon Technologies North America Corp. Method for removing material from a semiconductor
US7815814B2 (en) 2007-03-23 2010-10-19 Tokyo Electron Limited Method and system for dry etching a metal nitride
JP4418027B2 (ja) 2007-03-28 2010-02-17 キヤノンアネルバ株式会社 真空処理装置
JP4988402B2 (ja) 2007-03-30 2012-08-01 株式会社日立ハイテクノロジーズ プラズマ処理装置
US8235001B2 (en) 2007-04-02 2012-08-07 Hitachi Kokusai Electric Inc. Substrate processing apparatus and method for manufacturing semiconductor device
CN101657565A (zh) 2007-04-17 2010-02-24 株式会社爱发科 成膜装置
JP5282419B2 (ja) 2007-04-18 2013-09-04 ソニー株式会社 半導体装置及びその製造方法
JP5135879B2 (ja) 2007-05-21 2013-02-06 富士電機株式会社 炭化珪素半導体装置の製造方法
KR100777043B1 (ko) 2007-05-22 2007-11-16 주식회사 테스 비정질 탄소막 형성 방법 및 이를 이용한 반도체 소자의제조 방법
US8084105B2 (en) 2007-05-23 2011-12-27 Applied Materials, Inc. Method of depositing boron nitride and boron nitride-derived materials
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US7807578B2 (en) 2007-06-01 2010-10-05 Applied Materials, Inc. Frequency doubling using spacer mask
JP2008305871A (ja) 2007-06-05 2008-12-18 Spansion Llc 半導体装置およびその製造方法
WO2008157069A1 (en) 2007-06-15 2008-12-24 Applied Materials, Inc. Low temperature sacvd processes for pattern loading applications
WO2008157068A2 (en) 2007-06-15 2008-12-24 Applied Materials, Inc. Oxygen sacvd to form sacrificial oxide liners in substrate gaps
KR20080111627A (ko) 2007-06-19 2008-12-24 삼성전자주식회사 플라즈마 공정장치 및 그 방법
US20090004873A1 (en) 2007-06-26 2009-01-01 Intevac, Inc. Hybrid etch chamber with decoupled plasma controls
US7585716B2 (en) 2007-06-27 2009-09-08 International Business Machines Corporation High-k/metal gate MOSFET with reduced parasitic capacitance
JP5008478B2 (ja) 2007-06-27 2012-08-22 東京エレクトロン株式会社 基板処理装置およびシャワーヘッド
TWI479559B (zh) 2007-06-28 2015-04-01 Quantum Global Tech Llc 以選擇性噴灑蝕刻來清潔腔室部件的方法和設備
KR100877107B1 (ko) 2007-06-28 2009-01-07 주식회사 하이닉스반도체 반도체 소자의 층간절연막 형성방법
JP4438008B2 (ja) 2007-06-29 2010-03-24 東京エレクトロン株式会社 基板処理装置
US8021514B2 (en) 2007-07-11 2011-09-20 Applied Materials, Inc. Remote plasma source for pre-treatment of substrates prior to deposition
US8197636B2 (en) 2007-07-12 2012-06-12 Applied Materials, Inc. Systems for plasma enhanced chemical vapor deposition and bevel edge etching
JP5660753B2 (ja) 2007-07-13 2015-01-28 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ プラズマエッチング用高温カソード
WO2009010909A1 (en) 2007-07-19 2009-01-22 Koninklijke Philips Electronics N.V. Method, system and device for transmitting lighting device data
DE102007033685A1 (de) 2007-07-19 2009-01-22 Robert Bosch Gmbh Verfahren zum Ätzen einer Schicht auf einem Silizium-Halbleitersubstrat
JP5077659B2 (ja) 2007-07-20 2012-11-21 ニチアス株式会社 触媒コンバーター及び触媒コンバーター用保持材
US8008166B2 (en) 2007-07-26 2011-08-30 Applied Materials, Inc. Method and apparatus for cleaning a substrate surface
US8108981B2 (en) 2007-07-31 2012-02-07 Applied Materials, Inc. Method of making an electrostatic chuck with reduced plasma penetration and arcing
EP2042516A1 (en) 2007-09-27 2009-04-01 Protaffin Biotechnologie AG Glycosaminoglycan-antagonising MCP-1 mutants and methods of using same
US7848076B2 (en) 2007-07-31 2010-12-07 Applied Materials, Inc. Method and apparatus for providing an electrostatic chuck with reduced plasma penetration and arcing
US9202736B2 (en) 2007-07-31 2015-12-01 Applied Materials, Inc. Method for refurbishing an electrostatic chuck with reduced plasma penetration and arcing
US8367227B2 (en) 2007-08-02 2013-02-05 Applied Materials, Inc. Plasma-resistant ceramics with controlled electrical resistivity
JP4160104B1 (ja) 2007-08-16 2008-10-01 株式会社アルバック アッシング装置
WO2009025392A2 (en) 2007-08-21 2009-02-26 Panasonic Corporation Plasma processing device and method of monitoring plasma discharge state in plasma processing device
US8202393B2 (en) 2007-08-29 2012-06-19 Lam Research Corporation Alternate gas delivery and evacuation system for plasma processing apparatuses
WO2009028480A1 (ja) 2007-08-31 2009-03-05 Tokyo Electron Limited 半導体装置の製造方法
TWI459851B (zh) 2007-09-10 2014-11-01 Ngk Insulators Ltd heating equipment
JP5148955B2 (ja) 2007-09-11 2013-02-20 東京エレクトロン株式会社 基板載置機構及び基板処理装置
JP5347294B2 (ja) 2007-09-12 2013-11-20 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
JP5169097B2 (ja) 2007-09-14 2013-03-27 住友電気工業株式会社 半導体装置の製造装置および製造方法
US20120122319A1 (en) 2007-09-19 2012-05-17 Hironobu Shimizu Coating method for coating reaction tube prior to film forming process
US7781332B2 (en) 2007-09-19 2010-08-24 International Business Machines Corporation Methods to mitigate plasma damage in organosilicate dielectrics using a protective sidewall spacer
US8313610B2 (en) 2007-09-25 2012-11-20 Lam Research Corporation Temperature control modules for showerhead electrode assemblies for plasma processing apparatuses
US8298931B2 (en) 2007-09-28 2012-10-30 Sandisk 3D Llc Dual damascene with amorphous carbon for 3D deep via/trench application
US20090084317A1 (en) 2007-09-28 2009-04-02 Applied Materials, Inc. Atomic layer deposition chamber and components
JP2009088522A (ja) 2007-09-28 2009-04-23 Hynix Semiconductor Inc 半導体装置のリセスゲート製造方法
CN101802254B (zh) 2007-10-11 2013-11-27 瓦伦斯处理设备公司 化学气相沉积反应器
US7838390B2 (en) 2007-10-12 2010-11-23 Samsung Electronics Co., Ltd. Methods of forming integrated circuit devices having ion-cured electrically insulating layers therein
US7976631B2 (en) 2007-10-16 2011-07-12 Applied Materials, Inc. Multi-gas straight channel showerhead
US20090095221A1 (en) 2007-10-16 2009-04-16 Alexander Tam Multi-gas concentric injection showerhead
US20090095222A1 (en) 2007-10-16 2009-04-16 Alexander Tam Multi-gas spiral channel showerhead
US8252696B2 (en) 2007-10-22 2012-08-28 Applied Materials, Inc. Selective etching of silicon nitride
US7871926B2 (en) 2007-10-22 2011-01-18 Applied Materials, Inc. Methods and systems for forming at least one dielectric layer
US7541297B2 (en) 2007-10-22 2009-06-02 Applied Materials, Inc. Method and system for improving dielectric film quality for void free gap fill
JP5417338B2 (ja) 2007-10-31 2014-02-12 ラム リサーチ コーポレーション 冷却液と構成部品本体との間の熱伝導性を制御するためにガス圧を使用する温度制御モジュール及び温度制御方法
CN101889329B (zh) 2007-10-31 2012-07-04 朗姆研究公司 长寿命可消耗氮化硅-二氧化硅等离子处理部件
WO2009057838A1 (en) 2007-11-01 2009-05-07 Eugene Technology Co., Ltd Apparatus for surface-treating wafer using high-frequency inductively-coupled plasma
JP5006938B2 (ja) 2007-11-02 2012-08-22 キヤノンアネルバ株式会社 表面処理装置およびその基板処理方法
US7964040B2 (en) 2007-11-08 2011-06-21 Applied Materials, Inc. Multi-port pumping system for substrate processing chambers
US20090120584A1 (en) 2007-11-08 2009-05-14 Applied Materials, Inc. Counter-balanced substrate support
US20090120368A1 (en) 2007-11-08 2009-05-14 Applied Materials, Inc. Rotating temperature controlled substrate pedestal for film uniformity
US8592318B2 (en) 2007-11-08 2013-11-26 Lam Research Corporation Pitch reduction using oxide spacer
JP5150217B2 (ja) 2007-11-08 2013-02-20 東京エレクトロン株式会社 シャワープレート及び基板処理装置
US20090120364A1 (en) 2007-11-09 2009-05-14 Applied Materials, Inc. Gas mixing swirl insert assembly
JP5172617B2 (ja) 2007-11-12 2013-03-27 シャープ株式会社 気相成長装置及び気相成長方法
US7704849B2 (en) 2007-12-03 2010-04-27 Micron Technology, Inc. Methods of forming trench isolation in silicon of a semiconductor substrate by plasma
FR2924501B1 (fr) 2007-12-04 2010-02-05 Commissariat Energie Atomique Procede de reglage d'un circuit d'excitation et detection pour resonance magnetique nucleaire et circuit d'excitation et detection adapte a la mise en oeuvre d'un tel procede
US20110232737A1 (en) 2007-12-04 2011-09-29 Parabel Ag Multilayer solar element
JP5142692B2 (ja) 2007-12-11 2013-02-13 株式会社東芝 不揮発性半導体記憶装置
US8187486B1 (en) 2007-12-13 2012-05-29 Novellus Systems, Inc. Modulating etch selectivity and etch rate of silicon nitride thin films
US8512509B2 (en) 2007-12-19 2013-08-20 Applied Materials, Inc. Plasma reactor gas distribution plate with radially distributed path splitting manifold
US20090159213A1 (en) 2007-12-19 2009-06-25 Applied Materials, Inc. Plasma reactor gas distribution plate having a path splitting manifold immersed within a showerhead
US8129029B2 (en) 2007-12-21 2012-03-06 Applied Materials, Inc. Erosion-resistant plasma chamber components comprising a metal base structure with an overlying thermal oxidation coating
US7989329B2 (en) 2007-12-21 2011-08-02 Applied Materials, Inc. Removal of surface dopants from a substrate
KR20100103627A (ko) 2007-12-21 2010-09-27 어플라이드 머티어리얼스, 인코포레이티드 기판의 온도를 제어하기 위한 방법 및 장치
JP4974873B2 (ja) 2007-12-26 2012-07-11 新光電気工業株式会社 静電チャック及び基板温調固定装置
US20090170331A1 (en) 2007-12-27 2009-07-02 International Business Machines Corporation Method of forming a bottle-shaped trench by ion implantation
TWI427697B (zh) 2007-12-28 2014-02-21 Tokyo Electron Ltd 金屬膜及金屬氧化膜之蝕刻方法與半導體裝置之製造方法
US7910477B2 (en) 2007-12-28 2011-03-22 Texas Instruments Incorporated Etch residue reduction by ash methodology
US8018023B2 (en) 2008-01-14 2011-09-13 Kabushiki Kaisha Toshiba Trench sidewall protection by a carbon-rich layer in a semiconductor device
US7998864B2 (en) 2008-01-29 2011-08-16 International Business Machines Corporation Noble metal cap for interconnect structures
US20090191711A1 (en) 2008-01-30 2009-07-30 Ying Rui Hardmask open process with enhanced cd space shrink and reduction
TW200933812A (en) 2008-01-30 2009-08-01 Promos Technologies Inc Process for forming trench isolation structure and semiconductor device produced thereby
US20090194810A1 (en) 2008-01-31 2009-08-06 Masahiro Kiyotoshi Semiconductor device using element isolation region of trench isolation structure and manufacturing method thereof
KR20100106608A (ko) 2008-01-31 2010-10-01 어플라이드 머티어리얼스, 인코포레이티드 폐쇄 회로 ｍｏｃｖｄ 증착 제어
JP5224837B2 (ja) 2008-02-01 2013-07-03 株式会社東芝 基板のプラズマ処理装置及びプラズマ処理方法
JP5250279B2 (ja) 2008-02-23 2013-07-31 東京エレクトロン株式会社 プローブ装置
US20090214825A1 (en) 2008-02-26 2009-08-27 Applied Materials, Inc. Ceramic coating comprising yttrium which is resistant to a reducing plasma
WO2009107701A1 (ja) 2008-02-26 2009-09-03 京セラ株式会社 ウェハ支持部材とその製造方法、及びこれを用いた静電チャック
US8066895B2 (en) 2008-02-28 2011-11-29 Applied Materials, Inc. Method to control uniformity using tri-zone showerhead
US7906818B2 (en) 2008-03-13 2011-03-15 Micron Technology, Inc. Memory array with a pair of memory-cell strings to a single conductive pillar
JP5188849B2 (ja) 2008-03-14 2013-04-24 Ｓｐｐテクノロジーズ株式会社 プラズマ処理装置
US9520275B2 (en) 2008-03-21 2016-12-13 Tokyo Electron Limited Mono-energetic neutral beam activated chemical processing system and method of using
JP5352103B2 (ja) 2008-03-27 2013-11-27 東京エレクトロン株式会社 熱処理装置および処理システム
DE102008016425B4 (de) 2008-03-31 2015-11-19 Advanced Micro Devices, Inc. Verfahren zur Strukturierung einer Metallisierungsschicht durch Verringerung der durch Lackentfernung hervorgerufenen Schäden des dielektrischen Materials
JP5026326B2 (ja) 2008-04-04 2012-09-12 株式会社日立ハイテクノロジーズ エッチング処理状態の判定方法、システム
US20090258162A1 (en) 2008-04-12 2009-10-15 Applied Materials, Inc. Plasma processing apparatus and method
US8022377B2 (en) 2008-04-22 2011-09-20 Applied Materials, Inc. Method and apparatus for excimer curing
JP2009266952A (ja) 2008-04-23 2009-11-12 Seiko Epson Corp デバイスの製造方法及び製造装置
US8409355B2 (en) 2008-04-24 2013-04-02 Applied Materials, Inc. Low profile process kit
US8318605B2 (en) 2008-04-25 2012-11-27 Applied Materials, Inc. Plasma treatment method for preventing defects in doped silicon oxide surfaces during exposure to atmosphere
US8441640B2 (en) 2008-05-02 2013-05-14 Applied Materials, Inc. Non-contact substrate support position sensing system and corresponding adjustments
US8252194B2 (en) 2008-05-02 2012-08-28 Micron Technology, Inc. Methods of removing silicon oxide
US20090274590A1 (en) 2008-05-05 2009-11-05 Applied Materials, Inc. Plasma reactor electrostatic chuck having a coaxial rf feed and multizone ac heater power transmission through the coaxial feed
US20090275206A1 (en) 2008-05-05 2009-11-05 Applied Materials, Inc. Plasma process employing multiple zone gas distribution for improved uniformity of critical dimension bias
US8357435B2 (en) 2008-05-09 2013-01-22 Applied Materials, Inc. Flowable dielectric equipment and processes
US20090277874A1 (en) 2008-05-09 2009-11-12 Applied Materials, Inc. Method and apparatus for removing polymer from a substrate
US20090277587A1 (en) 2008-05-09 2009-11-12 Applied Materials, Inc. Flowable dielectric equipment and processes
US8277670B2 (en) 2008-05-13 2012-10-02 Lam Research Corporation Plasma process with photoresist mask pretreatment
US8333842B2 (en) 2008-05-15 2012-12-18 Applied Materials, Inc. Apparatus for etching semiconductor wafers
KR100998011B1 (ko) 2008-05-22 2010-12-03 삼성엘이디 주식회사 화학기상 증착장치
KR101006848B1 (ko) 2008-05-28 2011-01-14 주식회사 코미코 기판 지지 장치 및 이를 포함하는 기판 처리 장치
DE102008026134A1 (de) 2008-05-30 2009-12-17 Advanced Micro Devices, Inc., Sunnyvale Mikrostrukturbauelement mit einer Metallisierungsstruktur mit selbstjustierten Luftspalten zwischen dichtliegenden Metallleitungen
US7754601B2 (en) 2008-06-03 2010-07-13 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor interconnect air gap formation process
US20090302005A1 (en) 2008-06-04 2009-12-10 General Electric Company Processes for texturing a surface prior to electroless plating
KR20090128913A (ko) 2008-06-11 2009-12-16 성균관대학교산학협력단 태양전지용 실리콘 기판의 텍스처링 장치 및 그 방법
US7699935B2 (en) 2008-06-19 2010-04-20 Applied Materials, Inc. Method and system for supplying a cleaning gas into a process chamber
JP2010003826A (ja) 2008-06-19 2010-01-07 Toshiba Corp 半導体装置の製造方法
US8607731B2 (en) 2008-06-23 2013-12-17 Applied Materials, Inc. Cathode with inner and outer electrodes at different heights
JP5222040B2 (ja) 2008-06-25 2013-06-26 東京エレクトロン株式会社 マイクロ波プラズマ処理装置
WO2009157084A1 (ja) 2008-06-27 2009-12-30 三菱重工業株式会社 真空処理装置および真空処理装置の運転方法
JP5211332B2 (ja) 2008-07-01 2013-06-12 株式会社ユーテック プラズマｃｖｄ装置、ｄｌｃ膜及び薄膜の製造方法
US8291857B2 (en) 2008-07-03 2012-10-23 Applied Materials, Inc. Apparatuses and methods for atomic layer deposition
US8206506B2 (en) 2008-07-07 2012-06-26 Lam Research Corporation Showerhead electrode
US8161906B2 (en) 2008-07-07 2012-04-24 Lam Research Corporation Clamped showerhead electrode assembly
US20100006032A1 (en) 2008-07-11 2010-01-14 Applied Materials, Inc. Chamber components for cvd applications
KR101245430B1 (ko) 2008-07-11 2013-03-19 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 플라즈마 처리 방법
JP4473344B2 (ja) 2008-07-15 2010-06-02 キヤノンアネルバ株式会社 プラズマ処理方法及びプラズマ処理装置
US8336188B2 (en) 2008-07-17 2012-12-25 Formfactor, Inc. Thin wafer chuck
US7674684B2 (en) 2008-07-23 2010-03-09 Applied Materials, Inc. Deposition methods for releasing stress buildup
US20100018648A1 (en) 2008-07-23 2010-01-28 Applied Marterials, Inc. Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring
JP2011253832A (ja) 2008-07-24 2011-12-15 Canon Anelva Corp レジストトリミング方法及びトリミング装置
KR20100013980A (ko) 2008-08-01 2010-02-10 주식회사 하이닉스반도체 반도체 소자의 소자 분리막 형성 방법
US20100025370A1 (en) 2008-08-04 2010-02-04 Applied Materials, Inc. Reactive gas distributor, reactive gas treatment system, and reactive gas treatment method
CN102160167B (zh) 2008-08-12 2013-12-04 应用材料公司 静电吸盘组件
US7972968B2 (en) 2008-08-18 2011-07-05 Applied Materials, Inc. High density plasma gapfill deposition-etch-deposition process etchant
US9222172B2 (en) 2008-08-20 2015-12-29 Applied Materials, Inc. Surface treated aluminum nitride baffle
JP5801195B2 (ja) 2008-08-20 2015-10-28 ヴィジョン・ダイナミックス・ホールディング・ベスローテン・ヴェンノーツハップ 基板の表面をパターニングするためにプラズマ放電を起こすデバイス
US8268729B2 (en) 2008-08-21 2012-09-18 International Business Machines Corporation Smooth and vertical semiconductor fin structure
JP2010047818A (ja) 2008-08-25 2010-03-04 Toshiba Corp 半導体製造装置および半導体製造方法
KR100997502B1 (ko) 2008-08-26 2010-11-30 금호석유화학 주식회사 개환된 프탈릭 언하이드라이드를 포함하는 유기 반사 방지막 조성물과 이의 제조방법
KR101025741B1 (ko) 2008-09-02 2011-04-04 주식회사 하이닉스반도체 수직 채널 트랜지스터의 활성필라 제조방법
US8871645B2 (en) 2008-09-11 2014-10-28 Applied Materials, Inc. Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof
US8168268B2 (en) 2008-12-12 2012-05-01 Ovishinsky Innovation, LLC Thin film deposition via a spatially-coordinated and time-synchronized process
US7709396B2 (en) 2008-09-19 2010-05-04 Applied Materials, Inc. Integral patterning of large features along with array using spacer mask patterning process flow
JP5295833B2 (ja) 2008-09-24 2013-09-18 株式会社東芝 基板処理装置および基板処理方法
US20100081285A1 (en) 2008-09-30 2010-04-01 Tokyo Electron Limited Apparatus and Method for Improving Photoresist Properties
US7968441B2 (en) 2008-10-08 2011-06-28 Applied Materials, Inc. Dopant activation anneal to achieve less dopant diffusion (better USJ profile) and higher activation percentage
US7928003B2 (en) 2008-10-10 2011-04-19 Applied Materials, Inc. Air gap interconnects using carbon-based films
US7910491B2 (en) 2008-10-16 2011-03-22 Applied Materials, Inc. Gapfill improvement with low etch rate dielectric liners
US8207470B2 (en) 2008-10-20 2012-06-26 Industry-University Cooperation Foundation Hanyang University Apparatus for generating remote plasma
US20100099263A1 (en) 2008-10-20 2010-04-22 Applied Materials, Inc. Nf3/h2 remote plasma process with high etch selectivity of psg/bpsg over thermal oxide and low density surface defects
US20100098882A1 (en) 2008-10-21 2010-04-22 Applied Materials, Inc. Plasma source for chamber cleaning and process
US8173547B2 (en) 2008-10-23 2012-05-08 Lam Research Corporation Silicon etch with passivation using plasma enhanced oxidation
US20100101727A1 (en) 2008-10-27 2010-04-29 Helin Ji Capacitively coupled remote plasma source with large operating pressure range
JP5396065B2 (ja) 2008-10-28 2014-01-22 株式会社日立製作所 半導体装置の製造方法
US8206829B2 (en) 2008-11-10 2012-06-26 Applied Materials, Inc. Plasma resistant coatings for plasma chamber components
US20100116788A1 (en) 2008-11-12 2010-05-13 Lam Research Corporation Substrate temperature control by using liquid controlled multizone substrate support
US8043933B2 (en) 2008-11-24 2011-10-25 Applied Materials, Inc. Integration sequences with top surface profile modification
JP5358165B2 (ja) 2008-11-26 2013-12-04 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
US20100144140A1 (en) 2008-12-10 2010-06-10 Novellus Systems, Inc. Methods for depositing tungsten films having low resistivity for gapfill applications
US20100147219A1 (en) 2008-12-12 2010-06-17 Jui Hai Hsieh High temperature and high voltage electrode assembly design
US8012887B2 (en) 2008-12-18 2011-09-06 Applied Materials, Inc. Precursor addition to silicon oxide CVD for improved low temperature gapfill
US8869741B2 (en) 2008-12-19 2014-10-28 Lam Research Corporation Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber
US8540844B2 (en) 2008-12-19 2013-09-24 Lam Research Corporation Plasma confinement structures in plasma processing systems
US8058179B1 (en) 2008-12-23 2011-11-15 Novellus Systems, Inc. Atomic layer removal process with higher etch amount
JP2010154699A (ja) 2008-12-26 2010-07-08 Hitachi Ltd 磁束可変型回転電機
US20100183825A1 (en) 2008-12-31 2010-07-22 Cambridge Nanotech Inc. Plasma atomic layer deposition system and method
KR101587601B1 (ko) 2009-01-14 2016-01-25 삼성전자주식회사 비휘발성 메모리 장치의 제조 방법
US20100187694A1 (en) 2009-01-28 2010-07-29 Chen-Hua Yu Through-Silicon Via Sidewall Isolation Structure
KR20100087915A (ko) 2009-01-29 2010-08-06 삼성전자주식회사 실린더형 스토리지 노드를 포함하는 반도체 메모리 소자 및그 제조 방법
US7964517B2 (en) 2009-01-29 2011-06-21 Texas Instruments Incorporated Use of a biased precoat for reduced first wafer defects in high-density plasma process
KR101795658B1 (ko) 2009-01-31 2017-11-08 어플라이드 머티어리얼스, 인코포레이티드 에칭을 위한 방법 및 장치
KR101527195B1 (ko) 2009-02-02 2015-06-10 삼성전자주식회사 수직 구조의 비휘발성 메모리 소자
JP5210191B2 (ja) 2009-02-03 2013-06-12 東京エレクトロン株式会社 窒化珪素膜のドライエッチング方法
JP2010180458A (ja) 2009-02-06 2010-08-19 Kit:Kk アルミニウム表面の酸化層形成方法及び半導体装置の製造方法
CN102365906B (zh) 2009-02-13 2016-02-03 应用材料公司 用于等离子体腔室电极的rf总线与rf回流总线
KR101566922B1 (ko) 2009-02-16 2015-11-09 삼성전자주식회사 저스트 드라이 에칭과 케미컬 드라이 에칭을 조합한 반도체소자의 금속 실리사이드막 형성 방법
US8148749B2 (en) 2009-02-19 2012-04-03 Fairchild Semiconductor Corporation Trench-shielded semiconductor device
US20100224322A1 (en) 2009-03-03 2010-09-09 Applied Materials, Inc. Endpoint detection for a reactor chamber using a remote plasma chamber
US20110048325A1 (en) 2009-03-03 2011-03-03 Sun Hong Choi Gas Distribution Apparatus and Substrate Processing Apparatus Having the Same
WO2010102125A2 (en) 2009-03-05 2010-09-10 Applied Materials, Inc. Inductively coupled plasma reactor having rf phase control and methods of use thereof
US20110124144A1 (en) 2009-03-17 2011-05-26 Roth & Rau Ag Substrate processing system and substrate processing method
KR101539699B1 (ko) 2009-03-19 2015-07-27 삼성전자주식회사 3차원 구조의 비휘발성 메모리 소자 및 그 제조방법
US8312839B2 (en) 2009-03-24 2012-11-20 Applied Materials, Inc. Mixing frequency at multiple feeding points
US8382999B2 (en) 2009-03-26 2013-02-26 Applied Materials, Inc. Pulsed plasma high aspect ratio dielectric process
JP5657262B2 (ja) 2009-03-27 2015-01-21 東京エレクトロン株式会社 プラズマ処理装置
KR101534357B1 (ko) 2009-03-31 2015-07-06 도쿄엘렉트론가부시키가이샤 기판 지지 장치 및 기판 지지 방법
JP5501807B2 (ja) 2009-03-31 2014-05-28 東京エレクトロン株式会社 処理装置
US8026179B2 (en) 2009-04-09 2011-09-27 Macronix International Co., Ltd. Patterning method and integrated circuit structure
US8272346B2 (en) 2009-04-10 2012-09-25 Lam Research Corporation Gasket with positioning feature for clamped monolithic showerhead electrode
US8193075B2 (en) 2009-04-20 2012-06-05 Applied Materials, Inc. Remote hydrogen plasma with ion filter for terminating silicon dangling bonds
US9431237B2 (en) 2009-04-20 2016-08-30 Applied Materials, Inc. Post treatment methods for oxide layers on semiconductor devices
JP5710591B2 (ja) 2009-04-20 2015-04-30 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ プロセスチャンバ壁上にシリコンコーティングを使用した残留フッ素ラジカルの除去の促進
SG10201401671SA (en) 2009-04-21 2014-07-30 Applied Materials Inc Cvd apparatus for improved film thickness non-uniformity and particle performance
US20100273291A1 (en) 2009-04-28 2010-10-28 Applied Materials, Inc. Decontamination of mocvd chamber using nh3 purge after in-situ cleaning
US8623141B2 (en) 2009-05-18 2014-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. Piping system and control for semiconductor processing
KR101360876B1 (ko) 2009-06-03 2014-02-11 어플라이드 머티어리얼스, 인코포레이티드 식각을 위한 방법 및 장치
US8753447B2 (en) 2009-06-10 2014-06-17 Novellus Systems, Inc. Heat shield for heater in semiconductor processing apparatus
US8492292B2 (en) 2009-06-29 2013-07-23 Applied Materials, Inc. Methods of forming oxide layers on substrates
CN105088191B (zh) 2009-07-15 2018-07-13 应用材料公司 Cvd 腔室的流体控制特征结构
US8980382B2 (en) 2009-12-02 2015-03-17 Applied Materials, Inc. Oxygen-doping for non-carbon radical-component CVD films
US8124531B2 (en) 2009-08-04 2012-02-28 Novellus Systems, Inc. Depositing tungsten into high aspect ratio features
US8741788B2 (en) 2009-08-06 2014-06-03 Applied Materials, Inc. Formation of silicon oxide using non-carbon flowable CVD processes
US7935643B2 (en) 2009-08-06 2011-05-03 Applied Materials, Inc. Stress management for tensile films
US8404598B2 (en) 2009-08-07 2013-03-26 Applied Materials, Inc. Synchronized radio frequency pulsing for plasma etching
US7989365B2 (en) 2009-08-18 2011-08-02 Applied Materials, Inc. Remote plasma source seasoning
KR101095119B1 (ko) 2009-08-19 2011-12-16 삼성전기주식회사 다이 패키지 및 그 제조방법
US9299539B2 (en) 2009-08-21 2016-03-29 Lam Research Corporation Method and apparatus for measuring wafer bias potential
KR20120063494A (ko) 2009-08-26 2012-06-15 비코 인스트루먼츠 인코포레이티드 자성 기록 매체 상에 패턴을 제조하기 위한 시스템
KR20120090996A (ko) 2009-08-27 2012-08-17 어플라이드 머티어리얼스, 인코포레이티드 인-시튜 챔버 세정 후 프로세스 챔버의 제염 방법
US8211808B2 (en) 2009-08-31 2012-07-03 Applied Materials, Inc. Silicon-selective dry etch for carbon-containing films
JP5002073B2 (ja) 2009-09-02 2012-08-15 積水化学工業株式会社 シリコン含有膜のエッチング方法
US20120171852A1 (en) 2009-09-04 2012-07-05 Applied Materials, Inc Remote hydrogen plasma source of silicon containing film deposition
US20110065276A1 (en) 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
US20110061810A1 (en) 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
US20110061812A1 (en) 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
JP5648349B2 (ja) 2009-09-17 2015-01-07 東京エレクトロン株式会社 成膜装置
US8216640B2 (en) 2009-09-25 2012-07-10 Hermes-Epitek Corporation Method of making showerhead for semiconductor processing apparatus
US8329587B2 (en) 2009-10-05 2012-12-11 Applied Materials, Inc. Post-planarization densification
US8466067B2 (en) 2009-10-05 2013-06-18 Applied Materials, Inc. Post-planarization densification
US9449859B2 (en) 2009-10-09 2016-09-20 Applied Materials, Inc. Multi-gas centrally cooled showerhead design
TWI430714B (zh) 2009-10-15 2014-03-11 Orbotech Lt Solar Llc 電漿處理腔之噴撒頭組件及電漿處理腔之噴撒頭組件之氣體電離板之製備方法
US20110136347A1 (en) 2009-10-21 2011-06-09 Applied Materials, Inc. Point-of-use silylamine generation
EP2315028A1 (en) 2009-10-26 2011-04-27 Atlas Antibodies AB PODXL protein in colorectal cancer
US8741097B2 (en) 2009-10-27 2014-06-03 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
EP2494601A4 (en) 2009-10-30 2016-09-07 Semiconductor Energy Lab SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
JP5257328B2 (ja) 2009-11-04 2013-08-07 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
SG10201407094SA (en) 2009-11-04 2014-12-30 Applied Materials Inc Plasma ion implantation process for patterned disc media applications
US8716780B2 (en) 2009-11-06 2014-05-06 Rambus Inc. Three-dimensional memory array stacking structure
US8455364B2 (en) 2009-11-06 2013-06-04 International Business Machines Corporation Sidewall image transfer using the lithographic stack as the mandrel
US8771538B2 (en) 2009-11-18 2014-07-08 Applied Materials, Inc. Plasma source design
KR20110054840A (ko) 2009-11-18 2011-05-25 주식회사 아토 샤워헤드 어셈블리 및 이를 구비한 박막증착장치
US8742665B2 (en) 2009-11-18 2014-06-03 Applied Materials, Inc. Plasma source design
TW201133482A (en) 2009-11-30 2011-10-01 Applied Materials Inc Chamber for processing hard disk drive substrates
WO2011072143A2 (en) 2009-12-09 2011-06-16 Novellus Systems, Inc. Novel gap fill integration
US8604697B2 (en) 2009-12-09 2013-12-10 Jehara Corporation Apparatus for generating plasma
US20130023062A1 (en) 2009-12-11 2013-01-24 Takeshi Masuda Thin film manufacturing apparatus, thin film manufacturing method and method for manufacturing semiconductor device
US8202803B2 (en) 2009-12-11 2012-06-19 Tokyo Electron Limited Method to remove capping layer of insulation dielectric in interconnect structures
US20110139748A1 (en) 2009-12-15 2011-06-16 University Of Houston Atomic layer etching with pulsed plasmas
US20110140229A1 (en) 2009-12-16 2011-06-16 Willy Rachmady Techniques for forming shallow trench isolation
US8274017B2 (en) 2009-12-18 2012-09-25 Applied Materials, Inc. Multifunctional heater/chiller pedestal for wide range wafer temperature control
US20110151677A1 (en) 2009-12-21 2011-06-23 Applied Materials, Inc. Wet oxidation process performed on a dielectric material formed from a flowable cvd process
US8501629B2 (en) 2009-12-23 2013-08-06 Applied Materials, Inc. Smooth SiConi etch for silicon-containing films
JP4927158B2 (ja) 2009-12-25 2012-05-09 東京エレクトロン株式会社 基板処理方法、その基板処理方法を実行させるためのプログラムを記録した記録媒体及び基板処理装置
US20110303146A1 (en) 2009-12-28 2011-12-15 Osamu Nishijima Plasma doping apparatus
US20110159213A1 (en) 2009-12-30 2011-06-30 Applied Materials, Inc. Chemical vapor deposition improvements through radical-component modification
SG181670A1 (en) 2009-12-30 2012-07-30 Applied Materials Inc Dielectric film growth with radicals produced using flexible nitrogen/hydrogen ratio
US8329262B2 (en) 2010-01-05 2012-12-11 Applied Materials, Inc. Dielectric film formation using inert gas excitation
US8647992B2 (en) 2010-01-06 2014-02-11 Applied Materials, Inc. Flowable dielectric using oxide liner
JP2013516788A (ja) 2010-01-07 2013-05-13 アプライド マテリアルズ インコーポレイテッド ラジカル成分ｃｖｄ用のインサイチュオゾン硬化
JP5710209B2 (ja) 2010-01-18 2015-04-30 東京エレクトロン株式会社 電磁波給電機構およびマイクロ波導入機構
JP5166458B2 (ja) 2010-01-22 2013-03-21 株式会社東芝 半導体装置及びその製造方法
JP5608384B2 (ja) 2010-02-05 2014-10-15 東京エレクトロン株式会社 半導体装置の製造方法及びプラズマエッチング装置
ATE551439T1 (de) 2010-02-08 2012-04-15 Roth & Rau Ag PARALLELER PLATTENREAKTOR ZUR GLEICHMÄßIGEN DÜNNFILMABLAGERUNG MIT REDUZIERTER WERKZEUGAUFSTELLFLÄCHE
US8946828B2 (en) 2010-02-09 2015-02-03 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having elevated structure and method of manufacturing the same
US8361338B2 (en) 2010-02-11 2013-01-29 Taiwan Semiconductor Manufacturing Company, Ltd. Hard mask removal method
US20110198034A1 (en) 2010-02-11 2011-08-18 Jennifer Sun Gas distribution showerhead with coating material for semiconductor processing
US9850576B2 (en) 2010-02-15 2017-12-26 Applied Materials, Inc. Anti-arc zero field plate
JP5476152B2 (ja) 2010-02-16 2014-04-23 積水化学工業株式会社 窒化シリコンのエッチング方法及び装置
US8456009B2 (en) 2010-02-18 2013-06-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure having an air-gap region and a method of manufacturing the same
JP5662079B2 (ja) 2010-02-24 2015-01-28 東京エレクトロン株式会社 エッチング処理方法
US20110207332A1 (en) 2010-02-25 2011-08-25 Taiwan Semiconductor Manufacturing Co., Ltd. Thin film coated process kits for semiconductor manufacturing tools
KR101214758B1 (ko) 2010-02-26 2012-12-21 성균관대학교산학협력단 식각 방법
JP2013521650A (ja) 2010-03-05 2013-06-10 アプライド マテリアルズ インコーポレイテッド ラジカル成分ｃｖｄによる共形層
SG10201501824XA (en) 2010-03-12 2015-05-28 Applied Materials Inc Atomic layer deposition chamber with multi inject
US8772749B2 (en) 2010-03-16 2014-07-08 Sandisk 3D Llc Bottom electrodes for use with metal oxide resistivity switching layers
JP5450187B2 (ja) 2010-03-16 2014-03-26 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US8435902B2 (en) 2010-03-17 2013-05-07 Applied Materials, Inc. Invertable pattern loading with dry etch
KR20130055582A (ko) 2010-03-17 2013-05-28 어플라이드 머티어리얼스, 인코포레이티드 원격 플라즈마 소오스 지원형 실리콘 함유 막 증착을 위한 장치 및 방법
US20120074126A1 (en) 2010-03-26 2012-03-29 Applied Materials, Inc. Wafer profile modification through hot/cold temperature zones on pedestal for semiconductor manufacturing equipment
US8574447B2 (en) 2010-03-31 2013-11-05 Lam Research Corporation Inorganic rapid alternating process for silicon etch
US20110256692A1 (en) 2010-04-14 2011-10-20 Applied Materials, Inc. Multiple precursor concentric delivery showerhead
US8637411B2 (en) 2010-04-15 2014-01-28 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US20110256421A1 (en) 2010-04-16 2011-10-20 United Technologies Corporation Metallic coating for single crystal alloys
US8288268B2 (en) 2010-04-29 2012-10-16 International Business Machines Corporation Microelectronic structure including air gap
US8562742B2 (en) 2010-04-30 2013-10-22 Applied Materials, Inc. Apparatus for radial delivery of gas to a chamber and methods of use thereof
US8475674B2 (en) 2010-04-30 2013-07-02 Applied Materials, Inc. High-temperature selective dry etch having reduced post-etch solid residue
US8496756B2 (en) 2010-04-30 2013-07-30 Applied Materials, Inc. Methods for processing substrates in process systems having shared resources
US20110265884A1 (en) 2010-04-30 2011-11-03 Applied Materials, Inc. Twin chamber processing system with shared vacuum pump
US20110265951A1 (en) 2010-04-30 2011-11-03 Applied Materials, Inc. Twin chamber processing system
US20110278260A1 (en) 2010-05-14 2011-11-17 Applied Materials, Inc. Inductive plasma source with metallic shower head using b-field concentrator
US8361906B2 (en) 2010-05-20 2013-01-29 Applied Materials, Inc. Ultra high selectivity ashable hard mask film
US20140154668A1 (en) 2010-05-21 2014-06-05 The Trustees Of Princeton University Structures for Enhancement of Local Electric Field, Light Absorption, Light Radiation, Material Detection and Methods for Making and Using of the Same.
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
JP5751895B2 (ja) 2010-06-08 2015-07-22 株式会社日立国際電気 半導体装置の製造方法、クリーニング方法および基板処理装置
US8373239B2 (en) 2010-06-08 2013-02-12 International Business Machines Corporation Structure and method for replacement gate MOSFET with self-aligned contact using sacrificial mandrel dielectric
JP2011258768A (ja) 2010-06-09 2011-12-22 Sumitomo Electric Ind Ltd 炭化珪素基板、エピタキシャル層付き基板、半導体装置および炭化珪素基板の製造方法
US20110304078A1 (en) 2010-06-14 2011-12-15 Applied Materials, Inc. Methods for removing byproducts from load lock chambers
US8524004B2 (en) 2010-06-16 2013-09-03 Applied Materials, Inc. Loadlock batch ozone cure
US8349681B2 (en) 2010-06-30 2013-01-08 Sandisk Technologies Inc. Ultrahigh density monolithic, three dimensional vertical NAND memory device
US8928061B2 (en) 2010-06-30 2015-01-06 SanDisk Technologies, Inc. Three dimensional NAND device with silicide containing floating gates
JP5463224B2 (ja) 2010-07-09 2014-04-09 日本発條株式会社 流路付きプレートの製造方法、流路付きプレート、温度調節プレート、コールドプレート、及びシャワープレート
US20120009796A1 (en) 2010-07-09 2012-01-12 Applied Materials, Inc. Post-ash sidewall healing
KR101202352B1 (ko) 2010-07-19 2012-11-16 삼성디스플레이 주식회사 유기 발광 표시 장치 및 이의 제조 방법
US8338211B2 (en) 2010-07-27 2012-12-25 Amtech Systems, Inc. Systems and methods for charging solar cell layers
US8278203B2 (en) 2010-07-28 2012-10-02 Sandisk Technologies Inc. Metal control gate formation in non-volatile storage
US8318584B2 (en) 2010-07-30 2012-11-27 Applied Materials, Inc. Oxide-rich liner layer for flowable CVD gapfill
US8869742B2 (en) 2010-08-04 2014-10-28 Lam Research Corporation Plasma processing chamber with dual axial gas injection and exhaust
US9184028B2 (en) * 2010-08-04 2015-11-10 Lam Research Corporation Dual plasma volume processing apparatus for neutral/ion flux control
US20130059448A1 (en) 2011-09-07 2013-03-07 Lam Research Corporation Pulsed Plasma Chamber in Dual Chamber Configuration
US9449793B2 (en) 2010-08-06 2016-09-20 Lam Research Corporation Systems, methods and apparatus for choked flow element extraction
JP5198611B2 (ja) 2010-08-12 2013-05-15 株式会社東芝 ガス供給部材、プラズマ処理装置およびイットリア含有膜の形成方法
US8222125B2 (en) 2010-08-12 2012-07-17 Ovshinsky Innovation, Llc Plasma deposition of amorphous semiconductors at microwave frequencies
TW201213594A (en) 2010-08-16 2012-04-01 Air Liquide Etching of oxide materials
KR20120022251A (ko) 2010-09-01 2012-03-12 삼성전자주식회사 플라즈마 식각방법 및 그의 장치
US8573152B2 (en) 2010-09-03 2013-11-05 Lam Research Corporation Showerhead electrode
US8580699B2 (en) 2010-09-10 2013-11-12 Applied Materials, Inc. Embedded catalyst for atomic layer deposition of silicon oxide
KR20120029291A (ko) 2010-09-16 2012-03-26 삼성전자주식회사 반도체 소자 및 그 제조 방법
US8840754B2 (en) 2010-09-17 2014-09-23 Lam Research Corporation Polar regions for electrostatic de-chucking with lift pins
US8765573B2 (en) 2010-09-20 2014-07-01 Applied Materials, Inc. Air gap formation
US8993434B2 (en) 2010-09-21 2015-03-31 Applied Materials, Inc. Methods for forming layers on a substrate
US20120083133A1 (en) 2010-10-05 2012-04-05 Applied Materials, Inc. Amine curing silicon-nitride-hydride films
US9450172B2 (en) 2010-10-05 2016-09-20 Yeda Research And Development Co. Ltd. Electromechanical effect in metal oxides
TW201224190A (en) 2010-10-06 2012-06-16 Applied Materials Inc Atomic layer deposition of photoresist materials and hard mask precursors
KR101209003B1 (ko) 2010-10-14 2012-12-06 주식회사 유진테크 3차원 구조의 메모리 소자를 제조하는 방법 및 장치
US8633423B2 (en) 2010-10-14 2014-01-21 Applied Materials, Inc. Methods and apparatus for controlling substrate temperature in a process chamber
US8183134B2 (en) 2010-10-19 2012-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method with improved epitaxial quality of III-V compound on silicon surfaces
US20120097330A1 (en) 2010-10-20 2012-04-26 Applied Materials, Inc. Dual delivery chamber design
US9123762B2 (en) 2010-10-22 2015-09-01 Applied Materials, Inc. Substrate support with symmetrical feed structure
US20130224960A1 (en) 2010-10-29 2013-08-29 Applied Materials, Inc. Methods for etching oxide layers using process gas pulsing
JP5544343B2 (ja) 2010-10-29 2014-07-09 東京エレクトロン株式会社 成膜装置
US9111994B2 (en) 2010-11-01 2015-08-18 Magnachip Semiconductor, Ltd. Semiconductor device and method of fabricating the same
CN103168344A (zh) 2010-11-03 2013-06-19 应用材料公司 用于沉积碳化硅和碳氮化硅膜的设备和方法
US8133349B1 (en) 2010-11-03 2012-03-13 Lam Research Corporation Rapid and uniform gas switching for a plasma etch process
US8389416B2 (en) 2010-11-22 2013-03-05 Tokyo Electron Limited Process for etching silicon with selectivity to silicon-germanium
KR20120058962A (ko) 2010-11-30 2012-06-08 삼성전자주식회사 반도체 장치의 제조 방법
US8475103B2 (en) 2010-12-09 2013-07-02 Hamilton Sundstand Corporation Sealing washer assembly for large diameter holes on flat surfaces
US8470713B2 (en) 2010-12-13 2013-06-25 International Business Machines Corporation Nitride etch for improved spacer uniformity
US8741778B2 (en) 2010-12-14 2014-06-03 Applied Materials, Inc. Uniform dry etch in two stages
US9719169B2 (en) 2010-12-20 2017-08-01 Novellus Systems, Inc. System and apparatus for flowable deposition in semiconductor fabrication
JP5728221B2 (ja) 2010-12-24 2015-06-03 東京エレクトロン株式会社 基板処理方法及び記憶媒体
US20120177846A1 (en) 2011-01-07 2012-07-12 Applied Materials, Inc. Radical steam cvd
KR101246170B1 (ko) 2011-01-13 2013-03-25 국제엘렉트릭코리아 주식회사 반도체 제조에 사용되는 분사부재 및 그것을 갖는 플라즈마 처리 장치
KR101529578B1 (ko) 2011-01-14 2015-06-19 성균관대학교산학협력단 플라즈마 기판 처리 장치 및 방법
US20120180954A1 (en) 2011-01-18 2012-07-19 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US8363476B2 (en) 2011-01-19 2013-01-29 Macronix International Co., Ltd. Memory device, manufacturing method and operating method of the same
US9018692B2 (en) 2011-01-19 2015-04-28 Macronix International Co., Ltd. Low cost scalable 3D memory
KR101744372B1 (ko) 2011-01-20 2017-06-07 도쿄엘렉트론가부시키가이샤 진공 처리 장치
US8723423B2 (en) 2011-01-25 2014-05-13 Advanced Energy Industries, Inc. Electrostatic remote plasma source
US9068265B2 (en) 2011-02-01 2015-06-30 Applied Materials, Inc. Gas distribution plate with discrete protective elements
KR101732936B1 (ko) 2011-02-14 2017-05-08 삼성전자주식회사 반도체 소자의 미세 패턴 형성 방법
US8771539B2 (en) 2011-02-22 2014-07-08 Applied Materials, Inc. Remotely-excited fluorine and water vapor etch
WO2012118847A2 (en) 2011-02-28 2012-09-07 Inpria Corportion Solution processible hardmarks for high resolusion lithography
KR101904146B1 (ko) 2011-03-01 2018-10-04 어플라이드 머티어리얼스, 인코포레이티드 기판 이송 및 라디칼 구속을 위한 방법 및 장치
US8791021B2 (en) 2011-03-01 2014-07-29 King Abdullah University Of Science And Technology Silicon germanium mask for deep silicon etching
KR101895307B1 (ko) 2011-03-01 2018-10-04 어플라이드 머티어리얼스, 인코포레이티드 듀얼 로드락 구성의 저감 및 스트립 프로세스 챔버
EP2681088B1 (en) 2011-03-02 2016-11-23 Game Changers, Llc Air cushion transport
KR101937115B1 (ko) 2011-03-04 2019-01-09 노벨러스 시스템즈, 인코포레이티드 하이브리드 세라믹 샤워헤드
FR2972563B1 (fr) 2011-03-07 2013-03-01 Altis Semiconductor Snc Procédé de traitement d'une couche de nitrure de métal oxydée
US20120238108A1 (en) 2011-03-14 2012-09-20 Applied Materials, Inc. Two-stage ozone cure for dielectric films
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
TWI534291B (zh) 2011-03-18 2016-05-21 應用材料股份有限公司 噴淋頭組件
JP5837178B2 (ja) 2011-03-22 2015-12-24 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 化学気相堆積チャンバ用のライナアセンブリ
WO2012128348A1 (ja) 2011-03-23 2012-09-27 住友大阪セメント株式会社 静電チャック装置
US8980418B2 (en) 2011-03-24 2015-03-17 Uchicago Argonne, Llc Sequential infiltration synthesis for advanced lithography
JP5815967B2 (ja) 2011-03-31 2015-11-17 東京エレクトロン株式会社 基板洗浄装置及び真空処理システム
JP6003011B2 (ja) 2011-03-31 2016-10-05 東京エレクトロン株式会社 基板処理装置
JP5864879B2 (ja) 2011-03-31 2016-02-17 東京エレクトロン株式会社 基板処理装置及びその制御方法
US9196463B2 (en) 2011-04-07 2015-11-24 Varian Semiconductor Equipment Associates, Inc. System and method for plasma monitoring using microwaves
US8460569B2 (en) 2011-04-07 2013-06-11 Varian Semiconductor Equipment Associates, Inc. Method and system for post-etch treatment of patterned substrate features
US20120258607A1 (en) 2011-04-11 2012-10-11 Lam Research Corporation E-Beam Enhanced Decoupled Source for Semiconductor Processing
US8815720B2 (en) 2011-04-12 2014-08-26 Varian Semiconductor Equipment Associates, Inc. Method of etching a workpiece
US8445078B2 (en) 2011-04-20 2013-05-21 Applied Materials, Inc. Low temperature silicon oxide conversion
US9695510B2 (en) 2011-04-21 2017-07-04 Kurt J. Lesker Company Atomic layer deposition apparatus and process
US8415250B2 (en) 2011-04-29 2013-04-09 International Business Machines Corporation Method of forming silicide contacts of different shapes selectively on regions of a semiconductor device
US8298954B1 (en) 2011-05-06 2012-10-30 International Business Machines Corporation Sidewall image transfer process employing a cap material layer for a metal nitride layer
US20120285621A1 (en) 2011-05-10 2012-11-15 Applied Materials, Inc. Semiconductor chamber apparatus for dielectric processing
US9012283B2 (en) 2011-05-16 2015-04-21 International Business Machines Corporation Integrated circuit (IC) chip having both metal and silicon gate field effect transistors (FETs) and method of manufacture
US8663389B2 (en) 2011-05-21 2014-03-04 Andrew Peter Clarke Method and apparatus for crystal growth using a membrane-assisted semi-closed reactor
JP5563522B2 (ja) 2011-05-23 2014-07-30 東京エレクトロン株式会社 プラズマ処理装置
US8562785B2 (en) 2011-05-31 2013-10-22 Lam Research Corporation Gas distribution showerhead for inductively coupled plasma etch reactor
KR101390900B1 (ko) 2011-05-31 2014-04-30 세메스 주식회사 기판처리장치
US8466073B2 (en) 2011-06-03 2013-06-18 Applied Materials, Inc. Capping layer for reduced outgassing
WO2012169747A2 (ko) 2011-06-09 2012-12-13 한국기초과학지원연구원 벨트형 자석을 포함한 플라즈마 발생원 및 이를 이용한 박막 증착 시스템
US8637372B2 (en) 2011-06-29 2014-01-28 GlobalFoundries, Inc. Methods for fabricating a FINFET integrated circuit on a bulk silicon substrate
US8883637B2 (en) 2011-06-30 2014-11-11 Novellus Systems, Inc. Systems and methods for controlling etch selectivity of various materials
US9117867B2 (en) 2011-07-01 2015-08-25 Applied Materials, Inc. Electrostatic chuck assembly
US9054048B2 (en) 2011-07-05 2015-06-09 Applied Materials, Inc. NH3 containing plasma nitridation of a layer on a substrate
CN102867748B (zh) 2011-07-06 2015-09-23 中国科学院微电子研究所 一种晶体管及其制作方法和包括该晶体管的半导体芯片
KR20110086540A (ko) 2011-07-12 2011-07-28 조인숙 불소화합물을 이용한 필름의 선택적인 식각 방법
US9404178B2 (en) 2011-07-15 2016-08-02 Applied Materials, Inc. Surface treatment and deposition for reduced outgassing
US8741775B2 (en) 2011-07-20 2014-06-03 Applied Materials, Inc. Method of patterning a low-K dielectric film
US8617411B2 (en) 2011-07-20 2013-12-31 Lam Research Corporation Methods and apparatus for atomic layer etching
US8940642B2 (en) 2011-07-20 2015-01-27 Applied Materials, Inc. Method of multiple patterning of a low-K dielectric film
US8921177B2 (en) 2011-07-22 2014-12-30 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating an integrated circuit device
JP2013033965A (ja) 2011-07-29 2013-02-14 Semes Co Ltd 基板処理装置、基板処理設備、及び基板処理方法
US8771536B2 (en) 2011-08-01 2014-07-08 Applied Materials, Inc. Dry-etch for silicon-and-carbon-containing films
US20130034666A1 (en) 2011-08-01 2013-02-07 Applied Materials, Inc. Inductive plasma sources for wafer processing and chamber cleaning
CN102915902B (zh) 2011-08-02 2015-11-25 中微半导体设备(上海)有限公司 一种电容耦合式的等离子体处理装置及其基片加工方法
KR101271247B1 (ko) 2011-08-02 2013-06-07 주식회사 유진테크 에피택셜 공정을 위한 반도체 제조설비
US9117759B2 (en) 2011-08-10 2015-08-25 Micron Technology, Inc. Methods of forming bulb-shaped trenches in silicon
US20130045605A1 (en) 2011-08-18 2013-02-21 Applied Materials, Inc. Dry-etch for silicon-and-nitrogen-containing films
US8735291B2 (en) 2011-08-25 2014-05-27 Tokyo Electron Limited Method for etching high-k dielectric using pulsed bias power
US8679982B2 (en) 2011-08-26 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and oxygen
TWI492298B (zh) 2011-08-26 2015-07-11 Applied Materials Inc 雙重圖案化蝕刻製程
US8679983B2 (en) 2011-09-01 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and nitrogen
US9039911B2 (en) 2012-08-27 2015-05-26 Lam Research Corporation Plasma-enhanced etching in an augmented plasma processing system
US20130217239A1 (en) 2011-09-09 2013-08-22 Applied Materials, Inc. Flowable silicon-and-carbon-containing layers for semiconductor processing
US20130217243A1 (en) 2011-09-09 2013-08-22 Applied Materials, Inc. Doping of dielectric layers
US20130217240A1 (en) 2011-09-09 2013-08-22 Applied Materials, Inc. Flowable silicon-carbon-nitrogen layers for semiconductor processing
US20130217241A1 (en) 2011-09-09 2013-08-22 Applied Materials, Inc. Treatments for decreasing etch rates after flowable deposition of silicon-carbon-and-nitrogen-containing layers
US8808562B2 (en) 2011-09-12 2014-08-19 Tokyo Electron Limited Dry metal etching method
US8927390B2 (en) 2011-09-26 2015-01-06 Applied Materials, Inc. Intrench profile
US20130260564A1 (en) 2011-09-26 2013-10-03 Applied Materials, Inc. Insensitive dry removal process for semiconductor integration
US8664012B2 (en) 2011-09-30 2014-03-04 Tokyo Electron Limited Combined silicon oxide etch and contamination removal process
US8551891B2 (en) 2011-10-04 2013-10-08 Applied Materials, Inc. Remote plasma burn-in
WO2013050243A1 (en) 2011-10-06 2013-04-11 Asml Netherlands B.V. Chuck, lithography apparatus and method of using a chuck
US9653267B2 (en) 2011-10-06 2017-05-16 Applied Materials, Inc. Temperature controlled chamber liner
US8808563B2 (en) 2011-10-07 2014-08-19 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination
US20130087309A1 (en) 2011-10-11 2013-04-11 Applied Materials, Inc. Substrate support with temperature control
JP5740281B2 (ja) 2011-10-20 2015-06-24 東京エレクトロン株式会社 金属膜のドライエッチング方法
US9666414B2 (en) 2011-10-27 2017-05-30 Applied Materials, Inc. Process chamber for etching low k and other dielectric films
US8709953B2 (en) 2011-10-27 2014-04-29 Applied Materials, Inc. Pulsed plasma with low wafer temperature for ultra thin layer etches
US9947559B2 (en) 2011-10-28 2018-04-17 Applied Materials, Inc. Thermal management of edge ring in semiconductor processing
US20130105085A1 (en) 2011-10-28 2013-05-02 Applied Materials, Inc. Plasma reactor with chamber wall temperature control
US9574268B1 (en) 2011-10-28 2017-02-21 Asm America, Inc. Pulsed valve manifold for atomic layer deposition
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
US20130107415A1 (en) 2011-10-28 2013-05-02 Applied Materials, Inc. Electrostatic chuck
US10271416B2 (en) 2011-10-28 2019-04-23 Applied Materials, Inc. High efficiency triple-coil inductively coupled plasma source with phase control
WO2013070438A1 (en) 2011-11-08 2013-05-16 Applied Materials, Inc. Precursor distribution features for improved deposition uniformity
US20130115372A1 (en) 2011-11-08 2013-05-09 Primestar Solar, Inc. High emissivity distribution plate in vapor deposition apparatus and processes
JP5779482B2 (ja) 2011-11-15 2015-09-16 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US8652298B2 (en) 2011-11-21 2014-02-18 Lam Research Corporation Triode reactor design with multiple radiofrequency powers
US8900364B2 (en) 2011-11-29 2014-12-02 Intermolecular, Inc. High productivity vapor processing system
US8440523B1 (en) 2011-12-07 2013-05-14 International Business Machines Corporation Micromechanical device and methods to fabricate same using hard mask resistant to structure release etch
US20130177847A1 (en) 2011-12-12 2013-07-11 Applied Materials, Inc. Photoresist for improved lithographic control
US20130149866A1 (en) 2011-12-12 2013-06-13 Texas Instruments Incorporated Baffle plate for semiconductor processing apparatus
US8988848B2 (en) 2011-12-15 2015-03-24 Applied Materials, Inc. Extended and independent RF powered cathode substrate for extreme edge tunability
KR20130072911A (ko) 2011-12-22 2013-07-02 에스케이하이닉스 주식회사 비휘발성 메모리 장치 및 그 제조 방법
KR101878311B1 (ko) 2011-12-30 2018-07-17 삼성전자주식회사 ｈｉｇｈ-Ｋ막을 스페이서 에치 스톱으로 이용하는 반도체 소자 형성 방법 및 관련된 소자
US8753985B2 (en) 2012-01-17 2014-06-17 Applied Materials, Inc. Molecular layer deposition of silicon carbide
US8603891B2 (en) 2012-01-20 2013-12-10 Micron Technology, Inc. Methods for forming vertical memory devices and apparatuses
US8747686B2 (en) 2012-01-27 2014-06-10 Applied Materials, Inc. Methods of end point detection for substrate fabrication processes
JP6010406B2 (ja) 2012-01-27 2016-10-19 東京エレクトロン株式会社 マイクロ波放射機構、マイクロ波プラズマ源および表面波プラズマ処理装置
SG11201403527UA (en) 2012-02-08 2014-09-26 Iwatani Corp Method for treating inner surface of chlorine trifluoride supply passage in apparatus using chlorine trifluoride
US20130175654A1 (en) 2012-02-10 2013-07-11 Sylvain Muckenhirn Bulk nanohole structures for thermoelectric devices and methods for making the same
US9212099B2 (en) 2012-02-22 2015-12-15 Applied Materials, Inc. Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics
CN106847737B (zh) 2012-02-29 2020-11-13 应用材料公司 配置中的除污及剥除处理腔室
US8871656B2 (en) 2012-03-05 2014-10-28 Applied Materials, Inc. Flowable films using alternative silicon precursors
TWI602283B (zh) 2012-03-27 2017-10-11 諾發系統有限公司 鎢特徵部塡充
US8747610B2 (en) 2012-03-30 2014-06-10 Tokyo Electron Limited Plasma source pumping and gas injection baffle
US20130273313A1 (en) 2012-04-13 2013-10-17 Applied Materials, Inc. Ceramic coated ring and process for applying ceramic coating
US9090046B2 (en) 2012-04-16 2015-07-28 Applied Materials, Inc. Ceramic coated article and process for applying ceramic coating
US20130276980A1 (en) 2012-04-23 2013-10-24 Dmitry Lubomirsky Esc with cooling base
US8937800B2 (en) 2012-04-24 2015-01-20 Applied Materials, Inc. Electrostatic chuck with advanced RF and temperature uniformity
US9161428B2 (en) 2012-04-26 2015-10-13 Applied Materials, Inc. Independent control of RF phases of separate coils of an inductively coupled plasma reactor
KR20170109690A (ko) 2012-04-26 2017-09-29 어플라이드 머티어리얼스, 인코포레이티드 Ｅｓｃ 본딩 접착제 부식을 방지하기 위한 방법들 및 장치
US20130284369A1 (en) 2012-04-26 2013-10-31 Applied Materials, Inc. Two-phase operation of plasma chamber by phase locked loop
US9412579B2 (en) 2012-04-26 2016-08-09 Applied Materials, Inc. Methods and apparatus for controlling substrate uniformity
US9948214B2 (en) 2012-04-26 2018-04-17 Applied Materials, Inc. High temperature electrostatic chuck with real-time heat zone regulating capability
US9162236B2 (en) 2012-04-26 2015-10-20 Applied Materials, Inc. Proportional and uniform controlled gas flow delivery for dry plasma etch apparatus
US9394615B2 (en) 2012-04-27 2016-07-19 Applied Materials, Inc. Plasma resistant ceramic coated conductive article
US9976215B2 (en) 2012-05-01 2018-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor film formation apparatus and process
JP2013235912A (ja) 2012-05-08 2013-11-21 Tokyo Electron Ltd 被処理基体をエッチングする方法、及びプラズマエッチング装置
CN103388132B (zh) 2012-05-11 2015-11-25 中微半导体设备(上海)有限公司 气体喷淋头、其制造方法及薄膜生长反应器
US20130298942A1 (en) 2012-05-14 2013-11-14 Applied Materials, Inc. Etch remnant removal
KR101917815B1 (ko) 2012-05-31 2018-11-13 에스케이하이닉스 주식회사 에어갭을 구비한 반도체장치 및 그 제조 방법
FR2991320B1 (fr) 2012-06-05 2014-06-27 Commissariat Energie Atomique Procede de preparation d'amines methylees
US8974164B2 (en) 2012-06-26 2015-03-10 Newfrey Llc Plastic high heat fastener
US8916477B2 (en) 2012-07-02 2014-12-23 Novellus Systems, Inc. Polysilicon etch with high selectivity
US9034773B2 (en) 2012-07-02 2015-05-19 Novellus Systems, Inc. Removal of native oxide with high selectivity
US8802572B2 (en) 2012-07-10 2014-08-12 Applied Materials, Inc. Method of patterning a low-k dielectric film
KR101989514B1 (ko) 2012-07-11 2019-06-14 삼성전자주식회사 반도체 소자 및 그 제조 방법
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9184030B2 (en) 2012-07-19 2015-11-10 Lam Research Corporation Edge exclusion control with adjustable plasma exclusion zone ring
US9631273B2 (en) 2012-07-25 2017-04-25 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for dielectric deposition process
US9604249B2 (en) 2012-07-26 2017-03-28 Applied Materials, Inc. Innovative top-coat approach for advanced device on-wafer particle performance
US9343289B2 (en) 2012-07-27 2016-05-17 Applied Materials, Inc. Chemistry compatible coating material for advanced device on-wafer particle performance
JP6160619B2 (ja) 2012-08-01 2017-07-12 Tdk株式会社 フェライト磁性材料、フェライト焼結磁石及びモータ
US9514932B2 (en) 2012-08-08 2016-12-06 Applied Materials, Inc. Flowable carbon for semiconductor processing
US8772888B2 (en) 2012-08-10 2014-07-08 Avalanche Technology Inc. MTJ MRAM with stud patterning
US8747680B1 (en) 2012-08-14 2014-06-10 Everspin Technologies, Inc. Method of manufacturing a magnetoresistive-based device
US9364871B2 (en) 2012-08-23 2016-06-14 Applied Materials, Inc. Method and hardware for cleaning UV chambers
WO2014035933A1 (en) 2012-08-28 2014-03-06 Applied Materials, Inc. Methods and apparatus for forming tantalum silicate layers on germanium or iii-v semiconductor devices
US20140062285A1 (en) 2012-08-29 2014-03-06 Mks Instruments, Inc. Method and Apparatus for a Large Area Inductive Plasma Source
US9121097B2 (en) 2012-08-31 2015-09-01 Novellus Systems, Inc. Variable showerhead flow by varying internal baffle conductance
US8889566B2 (en) 2012-09-11 2014-11-18 Applied Materials, Inc. Low cost flowable dielectric films
JP6027374B2 (ja) 2012-09-12 2016-11-16 東京エレクトロン株式会社 プラズマ処理装置及びフィルタユニット
US9034770B2 (en) 2012-09-17 2015-05-19 Applied Materials, Inc. Differential silicon oxide etch
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US9390937B2 (en) 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch
US20140099794A1 (en) 2012-09-21 2014-04-10 Applied Materials, Inc. Radical chemistry modulation and control using multiple flow pathways
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US9018022B2 (en) 2012-09-24 2015-04-28 Lam Research Corporation Showerhead electrode assembly in a capacitively coupled plasma processing apparatus
TWI604528B (zh) 2012-10-02 2017-11-01 應用材料股份有限公司 使用電漿預處理與高溫蝕刻劑沉積的方向性二氧化矽蝕刻
TWI591712B (zh) 2012-10-03 2017-07-11 應用材料股份有限公司 使用低溫蝕刻劑沉積與電漿後處理的方向性二氧化矽蝕刻
KR102137617B1 (ko) 2012-10-19 2020-07-24 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
US9165783B2 (en) 2012-11-01 2015-10-20 Applied Materials, Inc. Method of patterning a low-k dielectric film
US8765574B2 (en) 2012-11-09 2014-07-01 Applied Materials, Inc. Dry etch process
JP6035117B2 (ja) 2012-11-09 2016-11-30 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
US8969212B2 (en) 2012-11-20 2015-03-03 Applied Materials, Inc. Dry-etch selectivity
US9064816B2 (en) 2012-11-30 2015-06-23 Applied Materials, Inc. Dry-etch for selective oxidation removal
US8980763B2 (en) 2012-11-30 2015-03-17 Applied Materials, Inc. Dry-etch for selective tungsten removal
US9777564B2 (en) 2012-12-03 2017-10-03 Pyrophase, Inc. Stimulating production from oil wells using an RF dipole antenna
US9982343B2 (en) 2012-12-14 2018-05-29 Applied Materials, Inc. Apparatus for providing plasma to a process chamber
WO2014092856A1 (en) 2012-12-14 2014-06-19 The Penn State Research Foundation Ultra-high speed anisotropic reactive ion etching
US9111877B2 (en) 2012-12-18 2015-08-18 Applied Materials, Inc. Non-local plasma oxide etch
US8921234B2 (en) 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
US8941969B2 (en) 2012-12-21 2015-01-27 Applied Materials, Inc. Single-body electrostatic chuck
JP6173684B2 (ja) 2012-12-25 2017-08-02 株式会社日立ハイテクノロジーズ 半導体装置の製造方法
JP5962773B2 (ja) 2012-12-28 2016-08-03 ニュー パワー プラズマ カンパニー リミテッド プラズマ反応器及びこれを用いたプラズマ点火方法
JP6328931B2 (ja) 2012-12-31 2018-05-23 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ フォトレジストパターントリミング方法
US9165823B2 (en) 2013-01-08 2015-10-20 Macronix International Co., Ltd. 3D stacking semiconductor device and manufacturing method thereof
US9093389B2 (en) 2013-01-16 2015-07-28 Applied Materials, Inc. Method of patterning a silicon nitride dielectric film
WO2014116392A1 (en) 2013-01-25 2014-07-31 Applied Materials, Inc. Electrostatic chuck with concentric cooling base
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
US9610591B2 (en) 2013-01-25 2017-04-04 Applied Materials, Inc. Showerhead having a detachable gas distribution plate
JP6080571B2 (ja) 2013-01-31 2017-02-15 東京エレクトロン株式会社 載置台及びプラズマ処理装置
US8970114B2 (en) 2013-02-01 2015-03-03 Lam Research Corporation Temperature controlled window of a plasma processing chamber component
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
JP2014154421A (ja) 2013-02-12 2014-08-25 Tokyo Electron Ltd プラズマ処理装置、プラズマ処理方法、および高周波発生器
CN104995333B (zh) 2013-02-19 2017-09-22 应用材料公司 使用可流动式cvd膜的hdd图案化
US20140234466A1 (en) 2013-02-21 2014-08-21 HGST Netherlands B.V. Imprint mold and method for making using sidewall spacer line doubling
TWI487004B (zh) 2013-03-01 2015-06-01 Winbond Electronics Corp 圖案化的方法及記憶體元件的形成方法
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US8921235B2 (en) 2013-03-04 2014-12-30 Applied Materials, Inc. Controlled air gap formation
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
KR102064914B1 (ko) 2013-03-06 2020-01-10 삼성전자주식회사 식각 공정 장치 및 식각 공정 방법
US8801952B1 (en) 2013-03-07 2014-08-12 Applied Materials, Inc. Conformal oxide dry etch
US10170282B2 (en) 2013-03-08 2019-01-01 Applied Materials, Inc. Insulated semiconductor faceplate designs
US8859433B2 (en) 2013-03-11 2014-10-14 International Business Machines Corporation DSA grapho-epitaxy process with etch stop material
US9681497B2 (en) 2013-03-12 2017-06-13 Applied Materials, Inc. Multi zone heating and cooling ESC for plasma process chamber
US9417515B2 (en) 2013-03-14 2016-08-16 Applied Materials, Inc. Ultra-smooth layer ultraviolet lithography mirrors and blanks, and manufacturing and lithography systems therefor
KR102021988B1 (ko) 2013-03-12 2019-09-17 삼성전자주식회사 반도체 소자 및 그의 제조 방법
US8946023B2 (en) 2013-03-12 2015-02-03 Sandisk Technologies Inc. Method of making a vertical NAND device using sequential etching of multilayer stacks
US20140262031A1 (en) 2013-03-12 2014-09-18 Sergey G. BELOSTOTSKIY Multi-mode etch chamber source assembly
US20140273451A1 (en) 2013-03-13 2014-09-18 Applied Materials, Inc. Tungsten deposition sequence
CN105122431A (zh) 2013-03-13 2015-12-02 应用材料公司 脉冲式直流等离子体蚀刻方法以及设备
US20140273525A1 (en) 2013-03-13 2014-09-18 Intermolecular, Inc. Atomic Layer Deposition of Reduced-Leakage Post-Transition Metal Oxide Films
TWI591211B (zh) 2013-03-13 2017-07-11 應用材料股份有限公司 蝕刻包含過渡金屬的膜之方法
US9006106B2 (en) 2013-03-14 2015-04-14 Applied Materials, Inc. Method of removing a metal hardmask
US9411237B2 (en) 2013-03-14 2016-08-09 Applied Materials, Inc. Resist hardening and development processes for semiconductor device manufacturing
US9556507B2 (en) 2013-03-14 2017-01-31 Applied Materials, Inc. Yttria-based material coated chemical vapor deposition chamber heater
US9276011B2 (en) 2013-03-15 2016-03-01 Micron Technology, Inc. Cell pillar structures and integrated flows
US8946076B2 (en) 2013-03-15 2015-02-03 Micron Technology, Inc. Methods of fabricating integrated structures, and methods of forming vertically-stacked memory cells
CN105142702A (zh) 2013-03-15 2015-12-09 皮博士研究所有限责任公司 一次性使用的针组件和方法
US20140263173A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Methods for improving etching resistance for an amorphous carbon film
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
JP5386046B1 (ja) 2013-03-27 2014-01-15 エピクルー株式会社 サセプタ支持部およびこのサセプタ支持部を備えるエピタキシャル成長装置
US10941501B2 (en) 2013-03-29 2021-03-09 Analytical Specialties, Inc. Method and composition for metal finishing
US9343293B2 (en) 2013-04-04 2016-05-17 Applied Materials, Inc. Flowable silicon—carbon—oxygen layers for semiconductor processing
US20140302690A1 (en) 2013-04-04 2014-10-09 Applied Materials, Inc. Chemical linkers to impart improved mechanical strength to flowable films
US9245761B2 (en) 2013-04-05 2016-01-26 Lam Research Corporation Internal plasma grid for semiconductor fabrication
US9230819B2 (en) 2013-04-05 2016-01-05 Lam Research Corporation Internal plasma grid applications for semiconductor fabrication in context of ion-ion plasma processing
US20140308758A1 (en) 2013-04-10 2014-10-16 Applied Materials, Inc. Patterning magnetic memory
US8748322B1 (en) 2013-04-16 2014-06-10 Applied Materials, Inc. Silicon oxide recess etch
US20140311581A1 (en) 2013-04-19 2014-10-23 Applied Materials, Inc. Pressure controller configuration for semiconductor processing applications
US20140329027A1 (en) 2013-05-02 2014-11-06 Applied Materials, Inc. Low temperature flowable curing for stress accommodation
US9720022B2 (en) 2015-05-19 2017-08-01 Lam Research Corporation Systems and methods for providing characteristics of an impedance matching model for use with matching networks
US8895449B1 (en) 2013-05-16 2014-11-25 Applied Materials, Inc. Delicate dry clean
US20140342569A1 (en) 2013-05-16 2014-11-20 Applied Materials, Inc. Near surface etch selectivity enhancement
US9114438B2 (en) 2013-05-21 2015-08-25 Applied Materials, Inc. Copper residue chamber clean
US9082826B2 (en) 2013-05-24 2015-07-14 Lam Research Corporation Methods and apparatuses for void-free tungsten fill in three-dimensional semiconductor features
JP6002087B2 (ja) 2013-05-29 2016-10-05 東京エレクトロン株式会社 グラフェンの生成方法
US20140357083A1 (en) 2013-05-31 2014-12-04 Applied Materials, Inc. Directed block copolymer self-assembly patterns for advanced photolithography applications
JP6180799B2 (ja) 2013-06-06 2017-08-16 株式会社日立ハイテクノロジーズ プラズマ処理装置
US10010912B2 (en) 2013-06-14 2018-07-03 Applied Materials, Inc. Particle reduction via throttle gate valve purge
KR102038647B1 (ko) 2013-06-21 2019-10-30 주식회사 원익아이피에스 기판 지지 장치 및 이를 구비하는 기판 처리 장치
US10808317B2 (en) 2013-07-03 2020-10-20 Lam Research Corporation Deposition apparatus including an isothermal processing zone
US9677176B2 (en) 2013-07-03 2017-06-13 Novellus Systems, Inc. Multi-plenum, dual-temperature showerhead
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
US8871651B1 (en) 2013-07-12 2014-10-28 Globalfoundries Inc. Mask formation processing
US8932947B1 (en) 2013-07-23 2015-01-13 Applied Materials, Inc. Methods for forming a round bottom silicon trench recess for semiconductor applications
US9362163B2 (en) 2013-07-30 2016-06-07 Lam Research Corporation Methods and apparatuses for atomic layer cleaning of contacts and vias
KR102154112B1 (ko) 2013-08-01 2020-09-09 삼성전자주식회사 금속 배선들을 포함하는 반도체 장치 및 그 제조 방법
US20150050812A1 (en) 2013-08-13 2015-02-19 Globalfoundries Inc. Wafer-less auto clean of processing chamber
KR102178150B1 (ko) 2013-08-16 2020-11-12 어플라이드 머티어리얼스, 인코포레이티드 반도체 장비를 위한 밀봉 홈 방법
US9543163B2 (en) 2013-08-20 2017-01-10 Applied Materials, Inc. Methods for forming features in a material layer utilizing a combination of a main etching and a cyclical etching process
JP2016529736A (ja) 2013-08-27 2016-09-23 東京エレクトロン株式会社 ハードマスクを横方向にトリミングする方法
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
CN105493262B (zh) 2013-08-30 2019-02-15 应用材料公司 基板支撑系统
JP5837012B2 (ja) 2013-09-12 2015-12-24 ラピスセミコンダクタ株式会社 モニタリング方法、プラズマモニタリング方法、モニタリングシステム及びプラズマモニタリングシステム
US20150079301A1 (en) 2013-09-13 2015-03-19 Srinivas Nemani Method of depositing thin metal-organic films
US9230980B2 (en) 2013-09-15 2016-01-05 Sandisk Technologies Inc. Single-semiconductor-layer channel in a memory opening for a three-dimensional non-volatile memory device
US9051655B2 (en) 2013-09-16 2015-06-09 Applied Materials, Inc. Boron ionization for aluminum oxide etch enhancement
US8956980B1 (en) 2013-09-16 2015-02-17 Applied Materials, Inc. Selective etch of silicon nitride
US8980758B1 (en) 2013-09-17 2015-03-17 Applied Materials, Inc. Methods for etching an etching stop layer utilizing a cyclical etching process
US20150083042A1 (en) 2013-09-26 2015-03-26 Applied Materials, Inc. Rotatable substrate support having radio frequency applicator
US9685371B2 (en) 2013-09-27 2017-06-20 Applied Materials, Inc. Method of enabling seamless cobalt gap-fill
US8951429B1 (en) 2013-10-29 2015-02-10 Applied Materials, Inc. Tungsten oxide processing
US9214377B2 (en) 2013-10-31 2015-12-15 Applied Materials, Inc. Methods for silicon recess structures in a substrate by utilizing a doping layer
TW201522696A (zh) 2013-11-01 2015-06-16 Applied Materials Inc 使用遠端電漿ｃｖｄ技術的低溫氮化矽膜
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9236265B2 (en) 2013-11-04 2016-01-12 Applied Materials, Inc. Silicon germanium processing
WO2015069428A1 (en) 2013-11-06 2015-05-14 Applied Materials, Inc. Particle generation suppressor by dc bias modulation
SG11201600440VA (en) 2013-11-06 2016-02-26 Mattson Tech Inc Novel mask removal process strategy for vertical nand device
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US9330937B2 (en) 2013-11-13 2016-05-03 Intermolecular, Inc. Etching of semiconductor structures that include titanium-based layers
US8945414B1 (en) 2013-11-13 2015-02-03 Intermolecular, Inc. Oxide removal by remote plasma treatment with fluorine and oxygen radicals
US20150140833A1 (en) 2013-11-18 2015-05-21 Applied Materials, Inc. Method of depositing a low-temperature, no-damage hdp sic-like film with high wet etch resistance
US9514953B2 (en) 2013-11-20 2016-12-06 Applied Materials, Inc. Methods for barrier layer removal
KR102237700B1 (ko) 2013-11-27 2021-04-08 삼성전자주식회사 수직형 메모리 장치 및 그 제조 방법
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9117855B2 (en) 2013-12-04 2015-08-25 Applied Materials, Inc. Polarity control for remote plasma
US20150170926A1 (en) 2013-12-16 2015-06-18 David J. Michalak Dielectric layers having ordered elongate pores
US20150170943A1 (en) 2013-12-17 2015-06-18 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US9287095B2 (en) 2013-12-17 2016-03-15 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US20150171008A1 (en) 2013-12-17 2015-06-18 GLOBAL FOUNDRIES Singapore Ptd. Ltd. Integrated circuits with dummy contacts and methods for producing such integrated circuits
US9263278B2 (en) 2013-12-17 2016-02-16 Applied Materials, Inc. Dopant etch selectivity control
KR102102787B1 (ko) 2013-12-17 2020-04-22 삼성전자주식회사 기판 처리 장치 및 블록커 플레이트 어셈블리
US20150170879A1 (en) 2013-12-17 2015-06-18 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US9190293B2 (en) 2013-12-18 2015-11-17 Applied Materials, Inc. Even tungsten etch for high aspect ratio trenches
US9622375B2 (en) 2013-12-31 2017-04-11 Applied Materials, Inc. Electrostatic chuck with external flow adjustments for improved temperature distribution
US9111907B2 (en) 2014-01-02 2015-08-18 Globalfoundries Inc. Silicide protection during contact metallization and resulting semiconductor structures
KR102128465B1 (ko) 2014-01-03 2020-07-09 삼성전자주식회사 수직 구조의 비휘발성 메모리 소자
US9945033B2 (en) 2014-01-06 2018-04-17 Applied Materials, Inc. High efficiency inductively coupled plasma source with customized RF shield for plasma profile control
US20150200042A1 (en) 2014-01-10 2015-07-16 Applied Materials, Inc. Recessing ultra-low k dielectric using remote plasma source
US9287134B2 (en) 2014-01-17 2016-03-15 Applied Materials, Inc. Titanium oxide etch
US9299577B2 (en) 2014-01-24 2016-03-29 Applied Materials, Inc. Methods for etching a dielectric barrier layer in a dual damascene structure
US20150214066A1 (en) 2014-01-27 2015-07-30 Applied Materials, Inc. Method for material removal in dry etch reactor
US9396989B2 (en) 2014-01-27 2016-07-19 Applied Materials, Inc. Air gaps between copper lines
US9293568B2 (en) 2014-01-27 2016-03-22 Applied Materials, Inc. Method of fin patterning
US9502218B2 (en) 2014-01-31 2016-11-22 Applied Materials, Inc. RPS assisted RF plasma source for semiconductor processing
US9385028B2 (en) 2014-02-03 2016-07-05 Applied Materials, Inc. Air gap process
US9305749B2 (en) 2014-02-10 2016-04-05 Applied Materials, Inc. Methods of directing magnetic fields in a plasma source, and associated systems
JP6059165B2 (ja) 2014-02-19 2017-01-11 東京エレクトロン株式会社 エッチング方法、及びプラズマ処理装置
US9846130B2 (en) 2014-02-24 2017-12-19 Applied Materials, Inc. Ceramic ring test device
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US9499898B2 (en) 2014-03-03 2016-11-22 Applied Materials, Inc. Layered thin film heater and method of fabrication
US9209031B2 (en) 2014-03-07 2015-12-08 Sandisk Technologies Inc. Metal replacement process for low resistance source contacts in 3D NAND
US9299575B2 (en) 2014-03-17 2016-03-29 Applied Materials, Inc. Gas-phase tungsten etch
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9299538B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9136273B1 (en) 2014-03-21 2015-09-15 Applied Materials, Inc. Flash gate air gap
US9190290B2 (en) 2014-03-31 2015-11-17 Applied Materials, Inc. Halogen-free gas-phase silicon etch
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9269590B2 (en) 2014-04-07 2016-02-23 Applied Materials, Inc. Spacer formation
KR102175763B1 (ko) 2014-04-09 2020-11-09 삼성전자주식회사 반도체 메모리 장치 및 이의 제조 방법
US20150311043A1 (en) 2014-04-25 2015-10-29 Applied Materials, Inc. Chamber component with fluorinated thin film coating
WO2015171335A1 (en) 2014-05-06 2015-11-12 Applied Materials, Inc. Directional treatment for multi-dimensional device processing
US9177853B1 (en) 2014-05-14 2015-11-03 Sandisk Technologies Inc. Barrier layer stack for bit line air gap formation
US10113236B2 (en) 2014-05-14 2018-10-30 Applied Materials, Inc. Batch curing chamber with gas distribution and individual pumping
CN104392963B (zh) 2014-05-16 2017-07-11 中国科学院微电子研究所 三维半导体器件制造方法
US9520485B2 (en) 2014-05-21 2016-12-13 Macronix International Co., Ltd. 3D independent double gate flash memory on bounded conductor layer
US9881788B2 (en) 2014-05-22 2018-01-30 Lam Research Corporation Back side deposition apparatus and applications
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US20150345029A1 (en) 2014-05-28 2015-12-03 Applied Materials, Inc. Metal removal
US10269541B2 (en) 2014-06-02 2019-04-23 Applied Materials, Inc. Workpiece processing chamber having a thermal controlled microwave window
US9773683B2 (en) 2014-06-09 2017-09-26 American Air Liquide, Inc. Atomic layer or cyclic plasma etching chemistries and processes
US9666449B2 (en) 2014-06-17 2017-05-30 Micron Technology, Inc. Conductors having a variable concentration of germanium for governing removal rates of the conductor during control gate formation
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
US9406523B2 (en) 2014-06-19 2016-08-02 Applied Materials, Inc. Highly selective doped oxide removal method
US20150371865A1 (en) 2014-06-19 2015-12-24 Applied Materials, Inc. High selectivity gas phase silicon nitride removal
US20150371861A1 (en) 2014-06-23 2015-12-24 Applied Materials, Inc. Protective silicon oxide patterning
US9502518B2 (en) 2014-06-23 2016-11-22 Stmicroelectronics, Inc. Multi-channel gate-all-around FET
US9768270B2 (en) 2014-06-25 2017-09-19 Sandisk Technologies Llc Method of selectively depositing floating gate material in a memory device
KR102248205B1 (ko) 2014-06-25 2021-05-04 삼성전자주식회사 수직 채널 및 에어 갭을 갖는 반도체 소자
US10196741B2 (en) 2014-06-27 2019-02-05 Applied Materials, Inc. Wafer placement and gap control optimization through in situ feedback
KR20160002543A (ko) 2014-06-30 2016-01-08 세메스 주식회사 기판 처리 장치
US9911579B2 (en) 2014-07-03 2018-03-06 Applied Materials, Inc. Showerhead having a detachable high resistivity gas distribution plate
US20160005833A1 (en) 2014-07-03 2016-01-07 Applied Materials, Inc. Feol low-k spacers
US10192717B2 (en) 2014-07-21 2019-01-29 Applied Materials, Inc. Conditioning remote plasma source for enhanced performance having repeatable etch and deposition rates
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US9378978B2 (en) 2014-07-31 2016-06-28 Applied Materials, Inc. Integrated oxide recess and floating gate fin trimming
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9159606B1 (en) 2014-07-31 2015-10-13 Applied Materials, Inc. Metal air gap
US9165786B1 (en) 2014-08-05 2015-10-20 Applied Materials, Inc. Integrated oxide and nitride recess for better channel contact in 3D architectures
US20160042968A1 (en) 2014-08-05 2016-02-11 Applied Materials, Inc. Integrated oxide and si etch for 3d cell channel mobility improvements
US20160043099A1 (en) 2014-08-05 2016-02-11 Applied Materials, Inc. Wordline 3d flash memory air gap
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
US9558928B2 (en) 2014-08-29 2017-01-31 Lam Research Corporation Contact clean in high-aspect ratio structures
US9355856B2 (en) 2014-09-12 2016-05-31 Applied Materials, Inc. V trench dry etch
US9735009B2 (en) 2014-09-15 2017-08-15 Applied Materials, Inc. Pre-clean of silicon germanium for pre-metal contact at source and drain and pre-high K at channel
US10083818B2 (en) 2014-09-24 2018-09-25 Applied Materials, Inc. Auto frequency tuned remote plasma source
JP5764246B1 (ja) 2014-09-24 2015-08-19 株式会社日立国際電気 基板処理装置、ガス導入シャフト及びガス供給プレート
US9478434B2 (en) 2014-09-24 2016-10-25 Applied Materials, Inc. Chlorine-based hardmask removal
US9368364B2 (en) 2014-09-24 2016-06-14 Applied Materials, Inc. Silicon etch process with tunable selectivity to SiO2 and other materials
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
CN105448737A (zh) 2014-09-30 2016-03-30 联华电子股份有限公司 用以形成硅凹槽的蚀刻制作工艺方法与鳍式场效晶体管
US20160099173A1 (en) 2014-10-03 2016-04-07 Applied Materials, Inc. Methods for etching a barrier layer for an interconnection structure for semiconductor applications
US10407771B2 (en) 2014-10-06 2019-09-10 Applied Materials, Inc. Atomic layer deposition chamber with thermal lid
US9240315B1 (en) 2014-10-10 2016-01-19 Applied Materials, Inc. CVD oxide surface pre-conditioning by inductively coupled O2 plasma
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US10008404B2 (en) 2014-10-17 2018-06-26 Applied Materials, Inc. Electrostatic chuck assembly for high temperature processes
US9652567B2 (en) 2014-10-20 2017-05-16 Lam Research Corporation System, method and apparatus for improving accuracy of RF transmission models for selected portions of an RF transmission path
US9825051B2 (en) 2014-10-22 2017-11-21 Sandisk Technologies Llc Three dimensional NAND device containing fluorine doped layer and method of making thereof
US9508529B2 (en) 2014-10-23 2016-11-29 Lam Research Corporation System, method and apparatus for RF power compensation in a plasma processing system
US9202708B1 (en) 2014-10-24 2015-12-01 Applied Materials, Inc. Doped silicon oxide etch
US10102321B2 (en) 2014-10-24 2018-10-16 Lam Research Corporation System, method and apparatus for refining radio frequency transmission system models
US9368369B2 (en) 2014-11-06 2016-06-14 Applied Materials, Inc. Methods for forming a self-aligned contact via selective lateral etch
US9419135B2 (en) 2014-11-13 2016-08-16 Sandisk Technologies Llc Three dimensional NAND device having reduced wafer bowing and method of making thereof
US9466494B2 (en) 2014-11-18 2016-10-11 Taiwan Semiconductor Manufacturing Company, Ltd. Selective growth for high-aspect ration metal fill
US9799509B2 (en) 2014-11-26 2017-10-24 Asm Ip Holding B.V. Cyclic aluminum oxynitride deposition
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US9299583B1 (en) 2014-12-05 2016-03-29 Applied Materials, Inc. Aluminum oxide selective etch
JP6320282B2 (ja) 2014-12-05 2018-05-09 東京エレクトロン株式会社 エッチング方法
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US9536749B2 (en) 2014-12-15 2017-01-03 Lam Research Corporation Ion energy control by RF pulse shape
US20160181116A1 (en) 2014-12-18 2016-06-23 Lam Research Corporation Selective nitride etch
US9396961B2 (en) 2014-12-22 2016-07-19 Lam Research Corporation Integrated etch/clean for dielectric etch applications
US9502258B2 (en) 2014-12-23 2016-11-22 Applied Materials, Inc. Anisotropic gap etch
US10134750B2 (en) 2014-12-30 2018-11-20 Toshiba Memory Corporation Stacked type semiconductor memory device and method for manufacturing the same
US9633867B2 (en) 2015-01-05 2017-04-25 Lam Research Corporation Method and apparatus for anisotropic tungsten etching
US9431268B2 (en) 2015-01-05 2016-08-30 Lam Research Corporation Isotropic atomic layer etch for silicon and germanium oxides
US9425041B2 (en) 2015-01-06 2016-08-23 Lam Research Corporation Isotropic atomic layer etch for silicon oxides using no activation
US9343272B1 (en) 2015-01-08 2016-05-17 Applied Materials, Inc. Self-aligned process
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US9779919B2 (en) 2015-01-09 2017-10-03 Hitachi High-Technologies Corporation Plasma processing apparatus and plasma processing method
JP2016134530A (ja) 2015-01-20 2016-07-25 株式会社東芝 加工制御装置、加工制御プログラムおよび加工制御方法
US9373522B1 (en) 2015-01-22 2016-06-21 Applied Mateials, Inc. Titanium nitride removal
US9449846B2 (en) 2015-01-28 2016-09-20 Applied Materials, Inc. Vertical gate separation
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US20160237570A1 (en) 2015-02-13 2016-08-18 Applied Materials, Inc. Gas delivery apparatus for process equipment
JP6396822B2 (ja) 2015-02-16 2018-09-26 東京エレクトロン株式会社 プラズマ処理装置のサセプタの電位を制御する方法
US9275834B1 (en) 2015-02-20 2016-03-01 Applied Materials, Inc. Selective titanium nitride etch
US9343358B1 (en) 2015-02-23 2016-05-17 Sandisk Technologies Inc. Three-dimensional memory device with stress compensation layer within a word line stack
CN107548520B (zh) 2015-02-24 2021-05-25 东芝存储器株式会社 半导体存储装置及其制造方法
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
TWI670749B (zh) 2015-03-13 2019-09-01 美商應用材料股份有限公司 耦接至工藝腔室的電漿源
US9478433B1 (en) 2015-03-30 2016-10-25 Applied Materials, Inc. Cyclic spacer etching process with improved profile control
US9502238B2 (en) 2015-04-03 2016-11-22 Lam Research Corporation Deposition of conformal films by atomic layer deposition and atomic layer etch
US20160307772A1 (en) 2015-04-15 2016-10-20 Applied Materials, Inc. Spacer formation process with flat top profile
KR102452593B1 (ko) 2015-04-15 2022-10-11 삼성전자주식회사 반도체 장치의 제조 방법
US9576788B2 (en) 2015-04-24 2017-02-21 Applied Materials, Inc. Cleaning high aspect ratio vias
US9870899B2 (en) 2015-04-24 2018-01-16 Lam Research Corporation Cobalt etch back
US10253412B2 (en) 2015-05-22 2019-04-09 Lam Research Corporation Deposition apparatus including edge plenum showerhead assembly
JP6184441B2 (ja) 2015-06-01 2017-08-23 キヤノンアネルバ株式会社 イオンビームエッチング装置、およびイオンビーム発生装置
JP6295439B2 (ja) 2015-06-02 2018-03-20 パナソニックＩｐマネジメント株式会社 プラズマ処理装置及び方法、電子デバイスの製造方法
WO2016194211A1 (ja) 2015-06-04 2016-12-08 株式会社 東芝 半導体記憶装置及びその製造方法
US9449843B1 (en) 2015-06-09 2016-09-20 Applied Materials, Inc. Selectively etching metals and metal nitrides conformally
JP2017017277A (ja) 2015-07-06 2017-01-19 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理方法
US9659791B2 (en) 2015-07-16 2017-05-23 Applied Materials, Inc. Metal removal with reduced surface roughness
US9564341B1 (en) 2015-08-04 2017-02-07 Applied Materials, Inc. Gas-phase silicon oxide selective etch
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US9972504B2 (en) 2015-08-07 2018-05-15 Lam Research Corporation Atomic layer etching of tungsten for enhanced tungsten deposition fill
US9620376B2 (en) 2015-08-19 2017-04-11 Lam Research Corporation Self limiting lateral atomic layer etch
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10147736B2 (en) 2015-09-03 2018-12-04 Toshiba Memory Corporation Semiconductor memory device and method for manufacturing same
US9837286B2 (en) 2015-09-04 2017-12-05 Lam Research Corporation Systems and methods for selectively etching tungsten in a downstream reactor
US9564338B1 (en) 2015-09-08 2017-02-07 Applied Materials, Inc. Silicon-selective removal
US9412752B1 (en) 2015-09-22 2016-08-09 Macronix International Co., Ltd. Reference line and bit line structure for 3D memory
US9460959B1 (en) 2015-10-02 2016-10-04 Applied Materials, Inc. Methods for pre-cleaning conductive interconnect structures
US9853101B2 (en) 2015-10-07 2017-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. Strained nanowire CMOS device and method of forming
US10192751B2 (en) 2015-10-15 2019-01-29 Lam Research Corporation Systems and methods for ultrahigh selective nitride etch
US20170133202A1 (en) 2015-11-09 2017-05-11 Lam Research Corporation Computer addressable plasma density modification for etch and deposition processes
US10043636B2 (en) 2015-12-10 2018-08-07 Lam Research Corporation Apparatuses and methods for avoiding electrical breakdown from RF terminal to adjacent non-RF terminal
US20170178899A1 (en) 2015-12-18 2017-06-22 Lam Research Corporation Directional deposition on patterned structures
KR20180085807A (ko) 2015-12-18 2018-07-27 어플라이드 머티어리얼스, 인코포레이티드 세정 방법
US9831097B2 (en) 2015-12-18 2017-11-28 Applied Materials, Inc. Methods for selective etching of a silicon material using HF gas without nitrogen etchants
WO2017127233A1 (en) 2016-01-20 2017-07-27 Applied Materials, Inc. Hybrid carbon hardmask for lateral hardmask recess reduction
US10074730B2 (en) 2016-01-28 2018-09-11 International Business Machines Corporation Forming stacked nanowire semiconductor device
US10147588B2 (en) 2016-02-12 2018-12-04 Lam Research Corporation System and method for increasing electron density levels in a plasma of a substrate processing system
KR102649369B1 (ko) 2016-04-11 2024-03-21 삼성전자주식회사 반도체 소자 및 그 제조 방법
KR102158668B1 (ko) 2016-04-22 2020-09-22 어플라이드 머티어리얼스, 인코포레이티드 플라즈마 한정 피쳐들을 갖는 기판 지지 페디스털
US10269566B2 (en) 2016-04-29 2019-04-23 Lam Research Corporation Etching substrates using ale and selective deposition
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10662527B2 (en) 2016-06-01 2020-05-26 Asm Ip Holding B.V. Manifolds for uniform vapor deposition
US9812462B1 (en) 2016-06-07 2017-11-07 Sandisk Technologies Llc Memory hole size variation in a 3D stacked memory
JP6792786B2 (ja) 2016-06-20 2020-12-02 東京エレクトロン株式会社 ガス混合装置および基板処理装置
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US20180025900A1 (en) 2016-07-22 2018-01-25 Applied Materials, Inc. Alkali metal and alkali earth metal reduction
US10083961B2 (en) 2016-09-07 2018-09-25 International Business Machines Corporation Gate cut with integrated etch stop layer
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US10043667B2 (en) 2016-09-15 2018-08-07 Applied Materials, Inc. Integrated method for wafer outgassing reduction
US20180080124A1 (en) 2016-09-19 2018-03-22 Applied Materials, Inc. Methods and systems for thermal ale and ald
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US9960068B1 (en) 2016-12-02 2018-05-01 Lam Research Corporation Moment cancelling pad raising mechanism in wafer positioning pedestal for semiconductor processing
KR102633031B1 (ko) 2016-11-04 2024-02-05 에스케이하이닉스 주식회사 반도체 메모리 소자
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10164042B2 (en) 2016-11-29 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10141328B2 (en) 2016-12-15 2018-11-27 Macronix International Co., Ltd. Three dimensional memory device and method for fabricating the same
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10692880B2 (en) 2016-12-27 2020-06-23 Applied Materials, Inc. 3D NAND high aspect ratio structure etch
US9960045B1 (en) 2017-02-02 2018-05-01 Applied Materials, Inc. Charge-trap layer separation and word-line isolation for enhanced 3-D NAND structure
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US9779956B1 (en) 2017-02-06 2017-10-03 Lam Research Corporation Hydrogen activated atomic layer etching
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10208383B2 (en) 2017-02-09 2019-02-19 The Regents Of The University Of Colorado, A Body Corporate Atomic layer etching processes using sequential, self-limiting thermal reactions comprising oxidation and fluorination
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US20180261686A1 (en) 2017-03-13 2018-09-13 Applied Materials, Inc. Transistor sidewall formation process
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040144490A1 (en) 2003-01-27 2004-07-29 Applied Materials, Inc. Method and apparatus for cleaning a CVD chamber
JP2009505429A (ja) * 2005-08-18 2009-02-05 エリコン ユーエスエイ、インコーポレイテッド ガス注入孔を用いたｐｅｃｖｄのための光学的放射干渉測定
US20140057447A1 (en) * 2012-08-02 2014-02-27 Applied Materials, Inc. Semiconductor processing with dc assisted rf power for improved control
WO2014066541A1 (en) * 2012-10-26 2014-05-01 Applied Materials, Inc. Pecvd apparatus and process
JP2014149983A (ja) * 2013-02-01 2014-08-21 Toshiba Corp プラズマ処理装置用電極とその製造方法、及びプラズマ処理装置

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