CN107004562B - 直接出口环状等离子体源 - Google Patents

直接出口环状等离子体源 Download PDF

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CN107004562B
CN107004562B CN201580066237.2A CN201580066237A CN107004562B CN 107004562 B CN107004562 B CN 107004562B CN 201580066237 A CN201580066237 A CN 201580066237A CN 107004562 B CN107004562 B CN 107004562B
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D·卢博米尔斯基
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Abstract

一种用于供应等离子体产物的装置，包括等离子体生成阻件，该等离子体生成阻件在其中定义了环状等离子体腔。该等离子体腔关于环轴基本对称，且该环轴定义该等离子体生成阻件的第一及第二轴向侧。磁构件，相对于该环轴以一个方位位置至少部分地围绕该等离子体生成阻件，使得该磁构件内的磁通量将相对应电场诱发进该等离子体腔，以从一个或更多个源气体生成等离子体，该等离子体形成等离子体产物。该等离子体生成阻件通过多个输出孔供应该等离子体产物，该多个输出孔是在该第一轴向侧上由该等离子体生成阻件所定义。

Description

直接出口环状等离子体源
技术领域
本揭示案广泛地应用于等离子体处理设备的领域。更具体而言，公开了用于提供空间上一致的等离子体产物的系统及方法。
背景技术
半导体处理通常利用等离子体处理来在半导体晶片上蚀刻、清洁或沉积材料。所有这样的处理在受处理晶片的整个表面上最好是高度一致的。显著地在这几年，在特征尺寸已减少的同时晶片尺寸已增加，以致于每个受处理晶片可收获更多的集成电路。一般的晶片直径从1970年代的约2或3英寸增加到2010年代的12英寸或更多。在同一时间框架下，商务集成电路的一般最小特征尺寸从约5微米减少到约0.015微米。在晶片成长得更大的同时处理较小的特征需要处理一致性上的显著改良。晶片以外的工件的等离子体处理也可受益于改良的处理一致性。
发明内容
在一实施例中，一种用于供应等离子体产物的装置包括等离子体生成阻件，该等离子体生成阻件在其中定义环状等离子体腔。该等离子体腔关于环轴基本对称，且该环轴定义该等离子体生成阻件的第一轴向侧及第二轴向侧。磁构件，相对于该环轴以一个方位位置至少部分地围绕该等离子体生成阻件，使得该磁构件内的磁通量将相对应电场诱发进该等离子体腔，以从一个或更多个源气体生成等离子体，该等离子体形成等离子体产物。该等离子体生成阻件通过多个输出孔供应该等离子体产物，该多个输出孔是在该第一轴向侧上由该等离子体生成阻件所定义。
在实施例中，一种用于供应等离子体产物的装置包括等离子体生成槽，该等离子体生成槽定义了等离子体腔。该等离子体腔关于环轴基本对称。该等离子体生成槽包括：(1)等离子体生成阻件，在其径向朝内、径向朝外及第二轴向侧上约束该等离子体腔，且定义了一个或更多个孔，以供将一个或更多个源气体引进该等离子体腔；及(2)平板，安置于该等离子体腔的第一轴向侧上，该平板通过该平板定义多个孔，该多个孔在方位上分布于该等离子体腔周围。该等离子体生成阻件的径向朝内及径向朝外边缘邻接该平板以形成该等离子体生成槽，基本上围住该等离子体腔。该装置更包括第一及第二电感线圈、用于在该第一及第二电感线圈内提供电流的电源，及第一及第二磁构件，该第一及第二磁构件至少部分地延伸于该等离子体生成阻件周围，且分别安置于该第一及第二电感线圈附近，以便该电流在该磁构件内诱发磁通量，且该磁构件内的该磁通量在该等离子体腔内生成方位电场以从一个或更多个源气体形成等离子体，形成等离子体产物。通过该平板的该孔对于该等离子体产物向相邻区域提供流体连通，以用于等离子体处理中。
在一实施例中，一种用于提供等离子体产物的方法包括以下步骤：将源气体流引进等离子体生成阻件，该等离子体生成阻件在其中定义环状等离子体腔。该等离子体腔关于环轴基本对称。该等离子体生成阻件仅在其第一轴向侧上相对于该环轴定义多个输出孔。该输出孔在方位上基本分布于该等离子体生成阻件周围。该方法也包括以下步骤：将电场诱发进该等离子体腔，以从该源气体流生成等离子体，该等离子体形成该等离子体产物，及将该等离子体产物穿过由该等离子体生成阻件所定义的该多个输出孔。
附图说明
图1示意性地绘示了依据实施例的等离子体处理系统的主要构件。
图2示意性地绘示了依据实施例的直接出口环状等离子体源的受选构件。
图3示意性地绘示了依据实施例的直接出口环状等离子体源的受选构件。
图4示意性地绘示了依据实施例的直接出口环状等离子体源的受选构件。
图5示意性地绘示了依据实施例的直接出口环状等离子体源的受选构件。
图6是图5的断线6-6处截取的直接出口环状等离子体源的示意剖视图。
图7是图5的断线7-7处截取的直接出口环状等离子体源的示意剖视图。
图8示意性地绘示了依据实施例的具有等离子体腔的直接出口环状等离子体源，该等离子体腔通过在平板附近安置等离子体阻件来定义。
图9示意性地绘示了依据实施例的具有等离子体腔的另一直接出口环状等离子体源，该等离子体腔通过在平板附近安置等离子体阻件来定义。
图10示意性地绘示了依据实施例的直接出口环状等离子体源，图示入口气体歧管，该入口气体歧管向其中的等离子体腔供应源气体。
图11是沿图10的线11-11的示意剖视图。
图12示意性地绘示了依据实施例的具有用于引入源气体的进线气体注射接口的直接出口环状等离子体源的等离子体阻件。
图13示意性地绘示了依据实施例的具有用于引入源气体的多个进线气体注射接口的直接出口环状等离子体源的等离子体阻件。
图14示意性地绘示了依据实施例的直接出口环状等离子体源的等离子体阻件，图示可如何相对于平板的表面法线以多个角度定义出口孔，该平板形成其一个轴向侧(axialside)。
图15A是依据实施例的示意底视图，绘示直接出口环状等离子体源，在该直接出口环状等离子体源中定义了四个出口孔。
图15B是依据实施例的示意底视图，绘示直接出口环状等离子体源，在该直接出口环状等离子体源中定义了六个出口孔。
图16以横截面图示意性地绘示了依据实施例的等离子体晶片处理系统，该等离子体晶片处理系统包括两个直接出口环状等离子体源。
图17A示意性地绘示了图16的等离子体处理系统的顶面的面朝上的示意平面图，其中两个直接环状等离子体源的底板特征是可见的。
图17B示意性地绘示了图16的等离子体处理系统的扩散板的面朝上的示意平面图。
图18以横截面图示意性地绘示了依据实施例的等离子体晶片处理系统，该等离子体晶片处理系统包括两个直接出口环状等离子体源。
具体实施方式
可通过结合采用以下所述的绘图来参照以下的详细说明来了解本揭示案，其中类似的参考标号是在若干绘图各处用以指类似的组件。注意的是，为了清楚说明的目的，绘图中的某些构件可不按比例绘制。可通过使用括号中的标号来指示项目的特定示例(例如等离子体阻件210(1)、210(2)等等)，同时不具括号的标号指任何这样的项目(例如等离子体阻件210)。为了清楚说明，在示出多个项目示例的示例中，只有示例中的某些部分可被标示。
图1示意性地绘示了依据实施例的等离子体处理系统100的主要构件。系统100是描绘为单一晶片、半导体晶片等离子体处理系统，但对于本领域技术人员将是明确的是，本文中的技术及原理可适用于任何类型的等离子体生成系统(例如并不一定处理晶片或半导体的系统)。也应了解的是，图1是简化图，仅绘示系统100的受选的、主要的构件；因而实际处理系统与系统100相比较看起来不同且很可能包含额外的构件。
处理系统100包括用于晶片接口115、用户接口120、等离子体处理单元130、控制器140及一个或更多个电源150的外壳110。处理系统100由各种设施所支持，该设施可包括气体(或多种)155、电源170、真空160及可选的其他物。为了清楚说明，未示出处理系统100内的内部管道及电性连接。
处理系统100是绘示为所谓的间接(或远程)等离子体处理系统，其在第一位置处生成等离子体，且将等离子体和/或等离子体产物(例如离子、分子碎体、自由基、受激物种及类似物)引导至处理步骤所发生的第二位置。因此，在图1中，等离子体处理单元130包括远程等离子体源132，该远程等离子体源132供应处理腔室134的等离子体和/或等离子体产物。处理腔室134包括一个或更多个晶片基座135，晶片接口115在其上放置工件50以供处理。工件50例如是半导体晶片，但任何其他类型的工件也可经受等离子体处理。操作时，气体(或多种)155被引进等离子体源132，且射频生成器(RF Gen)165供应电力以点燃等离子体源132内的等离子体。等离子体和/或等离子体产物从等离子体源132传到处理腔室134，在该处理腔室134处，工件50被处理。典型的现今系统例如可通过喷嘴133和/或扩散板137来传输等离子体和/或等离子体产物，以试图将它们一致地散播及施用。实际的等离子体系统可包括许多其他可选特征或子系统，通过该系统，等离子体、等离子体产物和/或载体或额外处理气体在等离子体源132及处理腔室134之间流动和/或混合。
绘示为系统100的部分的构件通过示例的方式来列出，且并非详尽的。也可包括许多其他可能的构件(例如：压力和/或流动控制器；气体或等离子体歧管或分布装置；离子抑制板；电极、磁心和/或其他电磁装置；机械、压力、温度、化学、光学和/或电子传感器；晶片或其他工件的处理机制；检视和/或其他存取接口；及类似物)，但为了清楚说明并未示出。影响处理腔室134中的状况的各种控制方案是可能的。例如，可通过监测处理腔室134中的压力及向上或向下调整所有气体流动直到所测量的压力是在所需压力的某容忍度内为止来维持压力。可通过增加加热器及温度传感器来控制温度。光学传感器可在生成时和/或在等离子体与工件作用时检测等离子体发射尖峰。
也为了清楚说明而未示出系统100内所绘示的构件的内部连接及协作。除了RF生成器165及气体155以外，诸如真空160和/或一般用途电源170的其他代表性的设施可与系统100连接。类似于系统100中所绘示的构件，绘示为与系统100连接的设施要是为说明性而非详尽的；诸如加热或冷却流体、加压空气、网络性能、废料处理系统及类似物的其他类型的设施也可与系统100连接，但为了清楚说明而未示出。类似地，虽然以上说明提及到等离子体在远程等离子体源132内被点燃，但以下所讨论的原理可同样适用于所谓的“直接”等离子体系统，该系统在实际的工件处理位置中生成等离子体。
虽然间接等离子体处理系统绘示于图1中及此揭示案的其他处，但对于本领域技术人员应是清楚的是，本文中所公开的技术、装置及方法也可适用于直接等离子体处理系统(例如在其中，等离子体是于工件(或多个)的位置处点燃)。类似地，在实施例中，可重新组织、重新分布和/或复制处理系统100的组件，例如：(1)提供具有多个处理腔室的单一处理系统；(2)对单一处理腔室提供多个远程等离子体源；(3)在单一处理腔室内提供多个工件夹具(例如，晶片基座135)；(4)利用单一远程等离子体源来向多个处理腔室供应等离子体产物；和/或(5)以串行/并行的组合提供等离子体及气体源，使得各种源气体可被活化(例如，至少暂时作为等离子体的一部分)零、一、二或更多次，且在它们进入处理腔室之前或之后与其他源气体混合，及类似物。还未作为等离子体的一部分的气体在本文中有时称为“未活化”气体。
图2示意性地绘示了依据实施例的直接出口环状等离子体源200的受选构件。等离子体源200是远程等离子体源132(图1)的示例。在本文中将使用以供描述图2中及其他处所示的特征的有用坐标系统将轴向位置定义为沿环轴1、将径向方向2定义为标示距环轴1的距离及将方位方向3定义为标示围绕环轴1的旋转方向。本文中所公开的等离子体源将被认为是定义了环轴，该环轴经过等离子体源的重心(不一定经过等离子体源的实体特征)，其中等离子体源的等离子体生成腔相对于环轴大致为环状、径向对称，且在垂直于环轴的平面中延伸于环轴周围。环状构件的主要圆周21是定义为在其外边界处在方位上延伸于环轴周围，例如，如对于以下的等离子体阻件210(1)所示的；为了清楚说明，主要圆周21并不图示为在图2中的等离子体阻件210(1)的周围一直延伸。次要圆周相对于环轴1以单一方位位置延伸于构件(例如电浆阻件210(1))周围，例如，如次要圆周22(图2)所示。
等离子体源200包括等离子体阻件210(1)、磁构件220(1)及电感线圈230。磁构件220(1)至少部分地延伸于等离子体阻件210(1)周围，且电感线圈230至少部分地缠绕于磁构件220(1)周围。虽然磁构件220(1)是以环状图示，磁构件220不一定要是环状的、具有圆形横截面或完全延伸于等离子体阻件210周围。等离子体阻件210(1)可被抽空，且等离子体源气体可引进等离子体阻件210(1)。在等离子体源气体在等离子体阻件210(1)内的情况下，电流通过电感线圈230，在磁构件220(1)内诱发磁通量，这反过来在等离子体阻件210(1)内诱发了电流，点燃等离子体。
等离子体源200可因此看作类似于变压器，其中主要电流流过电感线圈230且次要电流在等离子体阻件210(1)内流动。有益地，等离子体源200将次要电流约束在等离子体阻件210(1)内所点燃的气体和/或等离子体内，因此，有益地，等离子体阻件210(1)并不以定义完整方位电路的导体所形成。在某些实施例中，等离子体阻件210(1)是以介电材料制造，然而，如以下所讨论的，铝通常是一个用以制作等离子体阻件210(1)的至少一部分的便利材料。当等离子体阻件210(1)是以铝或另一基本导电的材料制作时，外场可被耦合进等离子体阻件210(1)，且可通过包括一个或更多个介电断路器240来中断方位电路路径，该介电断路器延伸于等离子体阻件210(1)的次要圆周的周围。
等离子体阻件210(1)在多个方位位置处(但在其单一轴向侧上)定义了多个输出孔，等离子体产物通过该输出孔分布，以用于等离子体处理中。例如，在图2中，输出孔是不可见的，但与出口250连接以沿所示的箭头方向来分布等离子体产物。通过在等离子体阻件210(1)的一个轴向侧的周围在多个方位位置处提供输出口，等离子体源200有益地提供出口250的圆形分布，使得其中所提供的等离子体产物距生成它们的等离子体是等距的。这允许直接将等离子体产物的圆形图样耦合至处理腔室，使得等离子体产物以圆形及空间上宽广的图样到达处理腔室，同时该图样的所有点距离等离子体基本上是等距的。
本文中的直接出口环状等离子体源实施例的一个优点在于跨宽广及圆形对称的图样提供等离子体产物，在该图样中，所有点距离等离子体基本上是等距的。这最小化了重组效应及壁效应上的差异，该效应在其他情况下会在不同的位置处影响处理结果。虽然典型的电感等离子体系统可利用环状等离子体腔室来生成等离子体产物，这样的系统一般通过单一接口或喷嘴来分布等离子体产物，该接口或喷嘴提供了从等离子体到工件上的各种位置的不同距离。
本文中的实施例的另一优点在于，在没有对于内部表面过量溅射损害的情况下，以相对的高压生成等离子体的能力，该溅射损害肇因于由高电场所加速的离子。本文中的实施例例如可操作在0.5托(Torr)或更少到100托或更多的压力状态下。其他类型的电感耦合等离子体源通常将等离子体暴露于高电场，这样的场一般是从位于等离子体阻件附近的电感线圈所引起。经历如此场的等离子体中离子以场的方向加速，通常撞击内部等离子体阻件壁且溅射其材料。溅射损害造成了降低的设备寿命和/或过量的维护需求，导致劳动及材料成本及工具停机时间。相较之下，除了沿环状等离子体腔的方向，本文中的设计最小化了等离子体阻件对于电场的暴露，使得由磁构件所操控的磁通量在等离子体本身内生成次要电流，而不引发会造成等离子体阻件表面的溅射的电场。这反过来允许本文中的至少某些实施例相较于更昂贵的材料使用主要以具有未处理表面的铝或具有特殊处理表面的铝而制作的等离子体阻件。受处理表面仍是个选项。
本文中的磁构件220一般以铁磁体形成。电感线圈230一般以铜形成，可选地为了减少外表皮的电阻率而镀以银。磁构件220及电感线圈230及等离子体阻件210的某些区域或部分两者可包括用于冷却气体或流体的通道(如本文中进一步讨论的)，以移除由操作期间的电及磁损失所生成的热。如上所述，等离子体阻件210可以具有未处理表面或具有表面处理(例如阳极化、或氧化铝、氮化铝或氧化钇涂料)的铝来制造。其他材料选择也是可能的，且可通过考虑成本、可加工性、导电性、热膨胀、热散逸特性及与所要的气体及等离子体产物的兼容性作出该选择。
图3示意性地绘示直接出口环状等离子体源300的受选构件。等离子体源300与等离子体源200(图2)共享许多相同构件，但包括等离子体阻件210(2)、具有各别的电感线圈230的两个磁构件220(1)。环轴1、径向方向2及方位方向3再次图示于图3中以供参考。为了进行对称及有效的等离子体生产，磁构件220(1)方位上是彼此相反地位于等离子体阻件210(2)周围。并且，等离子体源300的等离子体阻件210(2)包括四个介电断路器240；两个介电断路器240位于磁构件220(1)附近，同时其他两个从磁构件220(1)以90度间隔位于等离子体阻件210(2)的圆周周围。
图4示意性地绘示直接出口环状等离子体源400的受选构件。等离子体源400与等离子体源200及300共享许多相同构件，但包括两个磁构件220(2)，该磁构件220(2)是U或马蹄形的而非环状的。使用U或马蹄形磁构件帮助利用直接出口环状等离子体源的某些构造，如以下所进一步描述的。
图5示意性地绘示直接出口环状等离子体源500的受选构件。为了清楚说明，环轴1、径向方向2及方位方向3并不再次图示于图5中，但仍如图2中所定义的。等离子体源500与等离子体源200、300及400共享许多相同构件。等离子体阻件210(3)包括具有介电断路器240(其中的两者在图5的视图中被磁构件220(3)所隐藏)的金属区段245。等离子体阻件210(3)在轴向侧211(1)(被标示，但在图5的视图中隐藏)上是扁平的。等离子体阻件210(3)定义了区段245中的入口孔260。等离子体阻件210(3)也在轴向侧211(2)上定义了出口孔270，如图所示。图5中所示的入口孔260及出口孔270的位置及数量仅是说明性的；为了清楚说明，并非如此孔的所有示例皆被示出或标示。在实践中，入口孔260可被安置为提供将一致的源气体引入等离子体阻件210(3)，但可以其他方式布置以方便与等离子体源500的其他组件整合。出口孔270一般较图5中所示的更多，其经布置以提供将一致的等离子体产物分布至相邻的处理腔室，且可被定义于区段245或介电断路器240中(参照图6及图7)。断线6-6及断线7-7表示了用以采取图6及图7中所示的剖面图的平面。
图6及图7是分别于图5的断线6-6及断线7-7处所截取的直接出口环状等离子体源500的示意剖面图。图6图示通过介电断路器240(在图5的视图中隐藏在磁构件220(3)下)中的一者所采取的剖面。环轴1及径向方向2是再次图示于图6及7中以供参考；方位方向弯进或弯出图6及图7的平面，从环轴1的左边到右边改变符号。某些出口孔270是由等离子体阻件210(3)的轴向侧211(2)上的介电断路器240所定义，如图所示。也图示了等离子体腔280及形成于其中的等离子体299。图7图示通过金属区段245中的一者而采取的剖面。某些出口孔270是由等离子体阻件210(3)的轴向侧211(2)上的介电断路器240所定义，如图所示。也图示了等离子体腔280及形成于其中的等离子体299。
图6及图7也图示了通过磁构件220(3)的冷却管275。冷却管275可提供气体或流体的流体连接，以移除由磁构件220(3)所耗散的热；对于本文中所述的任何磁构件考虑提供冷却通道的特征，虽然为了清楚说明而在许多情况下不图示。类似地，可在电感线圈230和/或各种其他等离子体源组件中提供冷却管；为了清楚说明，在本文中图示及描述了某些这样的布置同时不图示及描述其他的布置。
图8示意性地绘示直接出口环状等离子体源600的部分，其中等离子体腔280是通过在平板610附近安置等离子体阻件210(4)所定义。环轴方向10及径向方向2是再次图示于图8中以供参考。实际环轴经过等离子体腔280的重心(在图8的视图外面)；方位方向弯进或弯出图8的平面。为了可制造性及维护的目的，提供由可轻易加工及替换的组件所定义的等离子体腔可能是有益的。等离子体源600因此通过将等离子体阻件210(4)提供为相对简单的形状来定义等离子体腔280，具有将等离子体阻件210(4)密封至平板610的能力，该平板610在其中定义出口孔270。将等离子体阻件210(4)密封至平板610的能力是由平板610中的沟槽615所提供，该沟槽615接纳一个或更多个O型环620。当等离子体腔280被抽空时，外部大气压力针对O型环620压制等离子体阻件210(4)以形成密封。在图8中所示的实施例中，平板610是以介电材料形成。平板610以及介电断路器240的合适材料包括陶瓷，特别是氮化铝或氧化铝，或熔凝石英。形成介电材料的平板610允许等离子体阻件210(4)的介电断路器240中断方位电流，以便等离子体299可形成；也就是说，若平板610曾以金属形成且电耦合至等离子体阻件210(4)，则由磁构件所诱发的电流仅会在所因此形成的方位电路周围快速移动，减少了将电场耦合进等离子体腔280的步骤。介电断路器240在本文中完全延伸于等离子体阻件210的次要圆周周围；在方位方向上，介电断路器240需要具有充足的宽度以抑制等离子体阻件210的邻近金属段生成电弧，例如约四分之一英寸对一英寸。
图9示意性地绘示直接出口环状等离子体源700，其具有通过在平板710附近安置等离子体阻件210(5)来定义的等离子体腔280。环轴方向10及径向方向2是再次图示于图9中以供参考；方位方向弯进及弯出图9的平面。平面710是以导体形成，且在其接触等离子体阻件210(5)的表面处包括介电障壁720。介电障壁720因此使等离子体阻件210(5)相对于形成平板710的导体的短路现象失效，以中断在其他情况下会形成方位电流。等离子体源700因此通过将等离子体阻件210(5)提供为相对简单的形状来定义等离子体腔280，具有将等离子体阻件210(5)密封至平板710的能力，该平板710在其中定义出口孔270。将等离子体阻件210(4)密封至平板710的能力是由等离子体阻件210(5)中的沟槽715所提供，该沟槽715接纳一个或更多个O型环620。当等离子体腔280被抽空时，外部大气压力针对O型环620压制平板710以形成密封。图9中所绘示的设计允许等离子体阻件210(5)及平板710被保持在不同电位；这允许控制通过输出孔270朝处理位置所发射的等离子体产物内自由基对离子的比率。图9也图示冷却管775，该冷却管775提供平板710的气体或流体冷却。冷却管775可被提供于本文中的其他组件(例如等离子体阻件、等离子体源或等离子体腔室的顶或底板、或等离子体腔室的侧壁)中。
图10示意性地绘示直接出口环状等离子体源800，图示向本文中的等离子体腔供应源气体的入口气体歧管810。径向方向2及方位方向3图示于图10中以供参考；环轴1延伸出图10的平面。图10中所绘示的顶视图在等离子体阻件210(6)的相反侧上图示磁构件220(3)，在任一侧上具有一对气体歧管810。气体歧管810中的各者通过一个或更多个入口820接收源气体；虽然只有一个入口820绘示于图10中，了解的是，入口820可在数量及位置上改变。气体歧管810通过其中的孔将源气体分布进等离子体阻件210(6)，如现在讨论的。断线11-11指示等离子体源800的横截面，其更详细地绘示于图11中。
图11是沿图10的断线11-11的示意剖面图，绘示直接出口环状等离子体源800。环轴1及径向方向2再次图示于图11中以供参考；方位方向弯进或弯出图11的平面，从环轴1的左边到右边改变符号。入口气流是通过入口孔820引进气体歧管810，接着通过由等离子体阻件210(6)所定义的孔830传进等离子体腔280。入口孔820在图11的视图中是图示为垂直的(例如与环轴1平行)，但可以其他角度来定义以在等离子体腔280中促进混合或其他效果(同样参照图12及13)。气体歧管810可经建构以仅包含小的气体容积，以便源气体流(例如由上游阀或其他气体管理设备所引入的)中的改变快速地传进等离子体腔280。气体歧管810可包括压力传感器，以提供关于其中的压力的信息，以促进了解影响等离子体处理的因素。气体歧管810的材料选择对于与其相关联的等离子体阻件210而言是相同的；例如金属(例如铝)(具有或不具经处理表面)、或电介质(例如氧化铝、氮化铝)及其他陶瓷是可能的选择。当气体歧管810及其相关联的等离子体阻件210皆以金属制作时，可能需要从等离子体阻件210隔离气体歧管810和/或在气体歧管810中提供介电断路器，以避免完成方位电路，如以上所讨论的。
图12示意性地绘示直接出口环状等离子体源的等离子体阻件210(7)，该等离子体阻件210(7)具有进线气体入口孔850以供引入源气体。环轴1、径向方向2及方位方向3再次图示于图12中以供参考。进线气体入口孔850基本上与等离子体腔280方位对准，如图所示。通过气体入口孔850引入源气体流给予受注入气体方位速度，以促进在等离子体阻件210(7)内各处进行混合。在实施例中，进线气体入口孔850可准确地方位对准，如图12中所示的，然而在其他实施例中，进线气体入口孔可仅部分对准，例如在其与等离子体腔280相交处定义角度。以任何相对于环轴具有非零方位分量的角度经过进线气体入口孔850的源气体将在其被引进等离子体腔280时在气体中产生至少某些方位速度。
图13示意性地绘示具有多个进线气体入口孔850的直接出口环状等离子体源的等离子体阻件210(8)。环轴1、径向方向2及方位方向3再次图示于图13中以供参考。可预期的是，可利用任何数量的进线气体入口孔850，且进线气体入口孔850可以其他角度与气体入口孔和/或与气体歧管810的变体结合使用，如图10及图11中所示。
图14示意性地绘示直接出口环状等离子体源900的等离子体阻件210(9)，图示出口孔270可如何相对于形成其一轴向侧的平板910的表面法线以多个角度920定义。环轴方向10及径向方向2再次图示于图14中以供参考；方位方向弯进及弯出图14的平面。以多个角度形成出口孔270可帮助将等离子体产物广泛地分布进相邻等离子体处理装置，以促进一致的处理。
图15A是直接出口环状等离子体源1000的示意底视图说明，其中定义了四个出口孔270。图15的视图示意性地描绘直接出口环状等离子体源1000的底板，其中该平板的另一侧上的等离子体阻件的大概边界由断线所暗示。即使仅使用四个出口孔270，相较于仅从一个孔抽取输出的先前技术的远程等离子体源，等离子体源1000可提供显著更多的一致处理。环轴1延伸进图15A及15B的平面；径向方向2及方位方向3是图示于图15A中以供参考，但为了清楚说明而在图15B中被省略。图15B是直接出口环状等离子体源1100的示意底视图说明，其中定义了超过六个出口孔270。图15B的视图示意性地描绘直接出口环状等离子体源1100的底板，其中该平板的另一侧上的等离子体阻件的大概边界由断线所表明。相对应等离子体阻件的几何形状及材料、磁构件及电感线圈的数量及放置可经优化，以在等离子体阻件内生成一致的等离子体分布，使得通过出口孔270所抽取的等离子体产物空间上跨等离子体源1100一致。在实施例中，直接环状等离子体源可包括数百或数千个出口孔270。
图16以横截图示意性地绘示等离子体晶片处理系统1200，其包括两个直接出口环状等离子体源1201及1202。为了清楚说明，仅标示处理系统1200的代表组件，且图16非按比例绘制。环轴1及径向方向2再次图示于图16中以供参考；方位方向弯进或弯出图16的平面，从环轴1的左边到右边改变符号。等离子体晶片处理系统定义处理腔室1234，该处理腔室1234关于环轴1径向对称；因此等离子体源1201可被视为外等离子体源，同时等离子体源1202可被视为内等离子体源，其中等离子体源1201及1202的环轴及等离子体腔室1234的对称轴皆重合。再次地，虽然图16是针对晶片处理的实施例，了解的是，其他实施例可利用相同的原理来处理其他工件。
等离子体晶片处理系统1200利用等离子体源1201及1202以生成等离子体产物，且配置以供在等离子体产物从等离子体的位置移动至正被处理的工件50时与未活化气体可选地混合等离子体产物。等离子体晶片处理系统1200定义处理腔室1234，在该处理腔室1234中，基座1235将工件50定位于处置位置处，如图所示。在腔室1234的表面1232的顶上，等离子体源1201形成外环形，且等离子体源1202形成内环形。等离子体源1201及1202可在具有或不具有气体歧管810(如图10及11中所示)的情况下从入口孔260或830接收源气体(如分别于图5及11中所示的)；这样的结构在图16的视图中未被示出。等离子体源1201及1202中的各者包括各别的等离子体阻件210(10)或210(11)，且利用电感线圈230及磁构件220(3)来从其中的源气体生成等离子体。等离子体源1201及1202共享共同的底板1210，该共同底板1210定义孔270以供向处理腔室1234分布等离子体产物。
底板1210中的孔270提供一致的、轴向的方向(例如在环轴的方向上)及短的路径，以供从等离子体产物起源处的等离子体将等离子体产物分布至正被处理的工件50。在等离子体源1201定义外环且等离子体源1202定义内环的情况下使用两个等离子体源1201及1202在对于工件50优化处理步骤之中心至边缘的一致性时提供了显著的自由度。可通过变化特别是等离子体源1201及1202的处理参数及测量在系统1200中所处理的测试和/或产品晶片上的效果来优化处理配方。可调整整体气体流及提供至等离子体源1201和/或1202的RF能量，直到跨所处理的各工件50效果是一致的为止。在实施例中，等离子体源1201及1202相较于彼此可运行不同的反应气体比率，和/或相较于彼此可利用完全不同的源气体。
处理系统1200也提供通过底板1210及顶面1232的气体入口1270，以供供应要与等离子体产物混合的未活化气体(也参照图17A)。图16及17A中所示的孔270和/或气体入口1270的数量及分布只是表示性的，且可在实施例间变化。
为了易于组装部件及部件的可替换性，底板1210在实施例中从腔室1234的顶面1232分离(如所示的)。也就是说，等离子体源1201及1202可与底板1210组装，并且作为单一单元安装或从顶面1232移除。然而，在实施例中，底板1210及顶面1232的特征可结合于单一平板中。
图16也图示了可选的扩散板1237，该扩散板1237定义孔1247，以供等离子体产物进入处理腔室1234。扩散板1237也可包括一个或更多个气体通道1239，以传导可与等离子体产物混合的未活化气体。例如，如图16中所示，气体通道1239与输出气体孔1241连接，该输出气体孔1241定义于扩散板1237的面向腔室的一侧中(也参照图17B)。图16及17B中所示的孔1247和/或输出气体孔1241的数量及分布仅为表示性的，且可在实施例间变化。
图17A示意性地绘示等离子体处理系统1200(图16)的顶面1232的朝上示意平面图，其中直接环状等离子体源1201及1202的底板1210的特征是可见的。为了清楚说明，仅标示顶面1232及底板1210的代表性组件，且图17并非按比例绘制。环轴、径向及方位方向未在图17A及17B中示出，但可从其他绘图中所示的那些方向确定。许多孔270从生成等离子体产物的等离子体向正被处理的工件提供了来自等离子体源1201及1202的等离子体产物的路径(该路径在长度上非常短且一致)，跨腔室1234促进了一致的处理。例如，在实施例中，从等离子体源1201和/或1202内的等离子体到工件50上的任何位置的路径可小于四英寸。提供与孔270穿插的气体入口1270允许与等离子体产物混合未活化气体。某些实施例在等离子体产物及未活化气体从图17A(也就是不包括扩散器1237的处理系统1200)中所示的结构生成时，有益地以等离子体产物及未活化气体处理晶片。其他实施例可受益于由扩散板1237所进行的额外气体及等离子体产物的混合步骤。
图17B示意性地绘示扩散器1237的朝上的示意平面图。为了清楚说明，仅标示扩散板1237的代表性特征，且图17B非按比例绘制。孔1247(绘示为开口圆)一路延伸过扩散板1237，同时出口气体孔1241(绘示为点)仅延伸进扩散板1237的底面，在该处，是从气体通道1239将未活化气体供应给该出口气体孔1241。扩散器1237促进进一步混合及精细控制等离子体产物与未活化气体的比率，这对于某些等离子体处理可能是有益的，但对于其他者可能是不必要的。
图18以横截图示意性地绘示等离子体晶片处理系统1300，其包括两个直接出口环状等离子体源1301及1302。再次地，虽然图18是针对晶片处理的实施例，了解的是，其他实施例可利用相同原理以供处理其他工件。处理系统1300的许多特征将被辨识为基本类似于先前所述的系统且不再次描述。环轴1及径向方向2再次图示于图18中以供参考；方位方向弯进或弯出图18的平面，从环轴1的左边到右边改变符号。等离子体晶片处理系统定义处理腔室1334，该处理腔室1334关于环轴1径向对称；因此等离子体源1301可被视为外等离子体源，同时等离子体源1302可被视为内等离子体源，其中等离子体源1301及1302的环轴及等离子体腔室1334的对称轴皆重合。图18绘示等离子体阻件210(12)及210(13)的额外特征，该额外特征是与下层空间开放性流体连通，而不受底板所约束。图18也绘示区域分隔器1360。
类似于等离子体源1201及1202的各别位置，等离子体源1301及1302在处理腔室1334顶上定义内及外环形。等离子体源1301及1302可在具有或不具有气体歧管810(如图10及11中所示)的情况下从入口孔260或830接收源气体(如分别于图5及11中所示的)；这样的结构在图18的视图中未示出。在处理腔室1334内，基座1335定位工件50以供处理。等离子体阻件210(12)和/或210(13)在其第一轴向侧上形成基本方位性连续的开口1370，也就是说，等离子体源1301及1302在第一轴向侧上基本上并不被约束，先前所讨论的等离子体源1201、1202及其他者也是如此。开口1370在它们通过顶板1332以方位方向显著延伸的方面而言可以是基本方位性连续的，然而，在此背景下，“基本方位性连续”并不排除中断开口1370以对于顶板1332的径向内部分提供机械支持；开口相对应于任一等离子体源的主要圆周的至少约75％会被视为是基本方位性连续的。并且，等离子体阻件210(12)及210(13)两者定义基本方位性连续的开口并不是关键的；在实施例中，等离子体阻件210(12)及210(13)中的一者定义基本方位性连续的开口同时另一者不是。因此，等离子体源1301及1302的等离子体腔是与在处理腔室1334的上部分中所形成的空间1355、1357流体连通，使得等离子体产物将通过开口1370传出等离子体阻件210(12)及210(13)而进入空间1355及1357。从空间1355、1357，等离子体产物通过扩散板1337传进处理腔室1334。
等离子体晶片处理系统1300当然可包括用于向等离子体源1301及1302供应源气体的供给件(provision)(例如结合图10-13所述的个别气体入口孔和/或气体歧管)及用于向等离子体产物增加进一步气体的供给件(例如图16、17A及17B中所绘示的气体入口1270和/或气体通道1239)。
等离子体阻件210(12)及210(13)的开口设计意味着，各等离子体阻件下的空间1355、1357中的各者中的压力将基本由到各别等离子体阻件的输入气体流所决定。可因此通过使用区域分隔器1360来维持空间1355及1357的分离。区域分隔器1360是一圆形特征，该圆形特征在其完整圆周周围接触顶板1332及扩散板1337两者；图18的横截面图仅图示通过横截平面的区域分隔器1360的两个部分。区域分隔器1360一般是以介电材料形成，且强制实行供应至处理腔室1334之中心区域及边缘区域的等离子体产物之间的分离。在实施例中，此分离可用以在处理腔室1334中单独控制中心及边缘处理效果，且因此用以优化工件50处之中心至边缘的处理一致性。
用于向等离子体源1301及1302供应源气体的供给件可独立控制，以便处理腔室之中心区域及边缘区域处(例如大约相对应于分别最受等离子体源1302及1301影响的那些区域)的处理效果可为了最佳的处理一致性而被调整。对于等离子体源1301及1302的源气体的独立可控性无论区域分隔器1360是否存在可是有益的。
从前述说明，应清楚的是，一、二或更多个环状等离子体源可用以通过沿到处理腔室的短传播路径从等离子体源的轴向侧抽取等离子体产物，来向处理腔室提供等离子体产物的一致分布。多个环状等离子体源可经安置以具有构件及到处理腔室的等离子体产物的最短传播路径，该构件例如为各别的等离子体阻件、等离子体阻件的介电断路器、磁构件、电感线圈、冷却装置、输出孔、入口气体歧管及为了最佳的一致性而布置的其他相关联构件。
已描述若干实施例，将由本领域技术人员所辨识的是，可使用各种修改、替代结构及等效物而不背离本发明的精神。此外，未描述许多熟知的处理及构件，以避免不必要地模糊了本发明。据此，不应将以上说明当作本发明的限制。
凡提供了值的范围，则了解的是，也具体公开了范围的上及下限之间的各中间值(高达下限的单位的十倍，除非在其他情况下上下文清楚地指示)。包括任何经陈述的值或经陈述范围中的中间值及该经陈述范围中的任何其他经陈述或中间的值之间的各个较小范围。这些较小范围的上及下限可独立地被包括或排除于范围中，且包括任一限值、皆不包括该限值或皆包括该限值的各个范围也包括在本发明中，受制于经陈述范围中的任何具体排除的限值。凡经陈述的范围包括该限值中的一者或两者，则也包括排除该经包括的限值中的任一者或两者的范围。
如本文中及所附权利要求中所使用的，单数形式“一个(a)”、“一个(an)”及“该(the)”包括了复数的指涉对象，除非在其他情况下上下文清楚指示。因此，例如，对于“处理”的指称包括了多个这样的处理，且对于“电极”的指称包括了对于一个或更多个电极及其对本领域技术人员是熟知的等效物的指称，以此类推。并且，用字“包括(comprise)”、“包括(comprising)”、“包括(include)”、“包括(including)”及“包括(includes)”当用在此说明书中及以下权利要求中时，欲指定所陈述特征、整数、组件或步骤的存在，但它们并不排除一个或更多个其他特征、整数、组件、步骤、动作或群组的存在或增加。

Claims (9)

1.一种用于供应等离子体产物的装置，包括：
第一等离子体生成阻件和第二等离子体生成阻件；
第一和第二磁构件，所述第一和第二磁构件分别部分地围绕所述第一等离子体生成阻件和所述第二等离子体生成阻件；
第一平板，所述第一平板定义穿过所述第一平板的多个第一开口；
扩散板，所述扩散板定义多个第二开口；以及
区域分隔器，所述区域分隔器设置在介于所述第一平板和所述扩散板之间的空间内，所述区域分隔器形成与所述第一平板的底面和所述扩散板的顶面相接触的圆形特征；其中：
所述第一等离子体生成阻件和所述第二等离子体生成阻件定义相应的第一环状等离子体腔和第二环状等离子体腔，所述第一环状等离子体腔和所述第二环状等离子体腔中的每一者关于环轴基本对称，所述环轴定义了所述第一等离子体生成阻件和所述第二等离子体生成阻件的第一轴向侧及第二轴向侧，并且所述第一环状等离子体腔和所述第二环状等离子体腔中的每一者被配置成使得当操作时，所述第一和第二磁构件内的磁通量分别将电场诱发进所述第一环状等离子体腔和所述第二环状等离子体腔，以生成第一和第二等离子体产物；
所述第一等离子体生成阻件和所述第二等离子体生成阻件中的每一者包括相应构件，所述相应构件在所述等离子体生成阻件的径向朝内侧、径向朝外侧和所述第二轴向侧上约束相应的环状等离子体腔，每一个相应构件形成径向朝内边缘和径向朝外边缘；
所述第一平板被设置在所述第一等离子体生成阻件和所述第二等离子体生成阻件的所述第一轴向侧上；
所述第一平板的上表面接触每一个相应构件的所述径向朝内边缘和所述径向朝外边缘，使得所述相应的第一环状等离子体腔和第二环状等离子体腔与所述多个第一开口中的数个流体连通；
所述第一等离子体生成阻件和所述第二等离子体生成阻件被配置成通过所述多个第一开口供应相应的第一和第二等离子体产物；
所述区域分隔器在介于所述第一平板和所述扩散板之间的所述空间中分隔所述第一和第二等离子体产物；
所述第一和第二等离子体产物独立地流过所述多个第二开口中的数个，朝向处理腔室；并且
其中所述区域分隔器的外径小于所述第一环状等离子体腔的直径且大于所述第二环状等离子体腔的直径。
2.如权利要求1所述的用于供应等离子体产物的装置，其中所述第一等离子体生成阻件定义用于向所述第一环状等离子体腔供应一个或更多个第一源气体的一个或更多个入口孔。
3.如权利要求2所述的用于供应等离子体产物的装置，进一步包括入口气体歧管，所述入口气体歧管是安置于所述第一等离子体生成阻件的所述第二轴向侧附近，所述一个或更多个入口孔包括在所述第二轴向侧上由所述第一等离子体生成阻件所定义的多个孔，以供从所述入口气体歧管向所述第一环状等离子体腔供应所述一个或更多个第一源气体。
4.如权利要求2所述的用于供应等离子体产物的装置，其中所述一个或更多个入口孔中的至少一者相对于所述环轴定义非零方位角。
5.如权利要求1所述的用于供应等离子体产物的装置，其中所述第一等离子体生成阻件包括铝。
6.如权利要求5所述的用于供应等离子体产物的装置，其中所述第一等离子体生成阻件包括至少一个介电断路器，所述至少一个介电断路器被配置用于中断由所述电场所诱发的方位电流。
7.如权利要求6所述的用于供应等离子体产物的装置，其中所述介电断路器包括多个介电断路器，所述多个介电断路器方位上基本对称地分布于所述第一等离子体生成阻件周围。
8.如权利要求3所述的用于供应等离子体产物的装置，所述入口气体歧管通过一个或更多个接口供应所述一个或更多个第一源气体，所述一个或更多个接口以基本正切于所述第一环状等离子体腔的中心轴的角度将所述一个或更多个第一源气体注进所述第一环状等离子体腔。
9.一种用于供应等离子体产物的装置，包括：
第一等离子体生成阻件，所述第一等离子体生成阻件在其内定义第一环状等离子体腔，所述第一环状等离子体腔的形状关于环轴基本对称，所述环轴定义所述第一等离子体生成阻件的第一轴向侧和第二轴向侧，其中所述第一等离子体生成阻件包括：
第一构件，所述第一构件在所述第一等离子体生成阻件的径向朝内侧、径向朝外侧和所述第二轴向侧上约束所述第一环状等离子体腔，所述第一构件形成彼此共平面的径向朝内边缘和径向朝外边缘；以及
平板，所述平板在所述第一环状等离子体腔的所述第一轴向侧上，所述平板：
形成沿着单一平面从所述第一构件的所述径向朝内边缘的径向内侧向所述第一构件的所述径向朝外边缘的径向外侧延伸的上表面，
定义穿过所述平板的一个或多个第一开口，所述一个或多个第一开口绕所述环轴在方位上是连续的，且
在所述单一平面处接触所述第一构件的所述径向朝内边缘和所述径向朝外边缘；以及
至少两个第一磁构件，所述至少两个第一磁构件与所述第一环状等离子体腔相邻，所述至少两个第一磁构件部分地围绕所述第一环状等离子体腔，且被配置成使得当操作时，所述至少两个第一磁构件内的磁通量将对应的电场诱发进所述第一环状等离子体腔以从一个或更多个第一源气体生成第一等离子体，并且所述第一等离子体形成所述等离子体产物的第一部分；
其中，所述第一等离子体生成阻件被配置成通过由所述平板定义的所述一个或多个第一开口供应所述等离子体产物的所述第一部分；
所述装置还包括：
第二等离子体生成阻件，所述第二等离子体生成阻件在其内定义第二环状等离子体腔，所述第二环状等离子体腔的形状关于所述环轴基本对称，所述环轴定义所述第二等离子体生成阻件的第一和第二轴向侧，其中所述第二等离子体生成阻件：
由比所述第一等离子体生成阻件的直径小的直径来表征，且
包括第二构件，所述第二构件在所述第二等离子体生成阻件的径向朝内侧、径向朝外侧和所述第二轴向侧上约束所述第二环状等离子体腔，所述第二构件形成彼此共平面的径向朝内边缘和径向朝外边缘；以及
至少两个第二磁构件，所述至少两个第二磁构件与所述第二环状等离子体腔相邻，所述至少两个第二磁构件部分地围绕所述第二环状等离子体腔，且被配置成使得当操作时，所述至少两个第二磁构件内的磁通量将对应的电场诱发进所述第二环状等离子体腔，以从一个或多个第二源气体生成第二等离子体，并且所述第二等离子体形成所述等离子体产物的第二部分；且其中：
所述平板定义穿过所述平板的一个或多个第二开口，所述一个或多个第二开口绕所述环轴在方位上是连续的，且
所述第二等离子体生成阻件被配置成通过由所述平板定义的所述一个或多个第二开口供应所述等离子体产物的所述第二部分；
所述装置还包括：
扩散板，所述扩散板：
具有比所述第一环状等离子体腔的直径大的直径，
在所述扩散板的外周边缘处邻接所述平板的底面，使得在所述扩散板与所述平板之间形成空间，以及
形成穿过所述扩散板的多个孔，
使得当在操作时，所述等离子体产物的所述第一和第二部分从所述第一和第二环状等离子体腔穿过所述第一和第二开口而进入所述空间中，并穿过所述扩散板的所述孔而朝向处理腔室；
所述装置还包括区域分隔器，所述区域分隔器被表征为圆形特征，所述区域分隔器的外径小于所述第一环状等离子体腔的直径且大于所述第二环状等离子体腔的直径，其中所述区域分隔器接触所述平板和所述扩散板二者，且被配置用于在所述空间内分隔所述等离子体产物的所述第一和第二部分。
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