TW201633361A - 直接出口環狀電漿源 - Google Patents

直接出口環狀電漿源 Download PDF

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TW201633361A
TW201633361A TW104139244A TW104139244A TW201633361A TW 201633361 A TW201633361 A TW 201633361A TW 104139244 A TW104139244 A TW 104139244A TW 104139244 A TW104139244 A TW 104139244A TW 201633361 A TW201633361 A TW 201633361A
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plasma
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路柏曼斯基迪米奇
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應用材料股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
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    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
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    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract

一種用於供應電漿產物的裝置，包括一電漿產生阻件，該電漿產生阻件在其中定義一環狀電漿腔。該電漿腔在一環軸周圍係實質對稱的，且該環軸定義該電漿產生阻件的一第一及第二軸向側。一磁構件，相對於該環軸以一個方位位置至少部分地圍繞該電漿產生阻件，使得該磁構件內的一磁通量將一相對應電場誘發進該電漿腔，以從一或更多個源氣體產生一電漿，該電漿形成電漿產物。該電漿產生阻件通過複數個輸出孔供應該電漿產物，該複數個輸出孔係在該第一軸向側上由該電漿產生阻件所定義。

Description

直接出口環狀電漿源
本揭示案廣泛地應用於電漿處理設備的領域。更具體而言，係揭露用於提供空間上一致之電漿產物的系統及方法。
半導體處理通常利用電漿處理來在半導體晶元上蝕刻、清潔或沉積材料。所有這樣的處理在受處理晶元的整個表面上最好是高度一致的。顯著地在這幾年，在特徵尺寸已減少的同時晶元尺寸已增加，以致於每個受處理晶元可收獲更多的集成電路。一般的晶元直徑從1970年代的約2或3吋增加到2010年代的12吋或更多。在同一時間框架下，商務集成電路的一般最小特徵尺寸從約5微米減少到約0.015微米。在晶元成長得更大的同時處理較小的特徵需要處理一致性上的顯著改良。晶元以外之工件的電漿處理亦可受益於改良的處理一致性。
在一實施例中，一種用於供應電漿產物的裝置包括一電漿產生阻件，該電漿產生阻件在其中定義一環狀電漿腔。該電漿腔在一環軸周圍係實質對稱的，且該環軸定義該電漿產生阻件的一第一及第二軸向側。一磁構件，相對於該環軸以一個方位位置至少部分地圍繞該電漿產 生阻件，使得該磁構件內的一磁通量將一相對應電場誘發進該電漿腔，以從一或更多個源氣體產生一電漿，該電漿形成電漿產物。該電漿產生阻件通過複數個輸出孔供應該電漿產物，該複數個輸出孔係在該第一軸向側上由該電漿產生阻件所定義。
在一實施例中，一種用於供應電漿產物的裝置包括一電漿產生槽，該電漿產生槽定義一電漿腔。該電漿腔在一環軸周圍係實質對稱的。該電漿產生槽包括：(1)一電漿產生阻件，在其徑向朝內、徑向朝外及第二軸向側上約束該電漿腔，且定義一或更多個孔，以供將一或更多個源氣體引進該電漿腔；及(2)一平板，安置於該電漿腔的一第一軸向側上，該平板通過該平板定義複數個孔，該複數個孔在方位上係分佈於該電漿腔周圍。該電漿產生阻件的徑向朝內及徑向朝外邊緣鄰接該平板以形成該電漿產生槽，實質上圍住該電漿腔。該裝置更包括第一及第二電感線圈、用於在該第一及第二電感線圈內提供電流的一電源，及第一及第二磁構件，該第一及第二磁構件至少部分地延伸於該電漿產生阻件周圍，且分別安置於該第一及第二電感線圈附近，以便該等電流在該等磁構件內誘發磁通量，且該等磁構件內的該等磁通量在該電漿腔內產生方位電場以從該一或更多個源氣體形成一電漿，形成電漿產物。通過該平板的該等孔對於該等電漿產物向一相鄰區域提供流體連通，以供用在電漿處理中。
在一實施例中，一種用於提供電漿產物的方法包括以下步驟：將一源氣體流引進一電漿產生阻件，該電漿產生阻件在其中定義一環狀電漿腔。該電漿腔在一環軸周圍係實質對稱的。該電漿產生阻件僅在其一第一軸向側上相對於該環軸定義複數個輸出孔。該等輸出孔實質在方位上係分佈於該電漿產生阻件周圍。該方法亦包括以下步驟：將一電場誘發進該電漿腔，以從該源氣體流產生一電漿，該電漿形成該電漿產物，及將該電漿產物傳過由該電漿產生阻件所定義的該複數個輸出孔。
1‧‧‧環軸
2‧‧‧徑向方向
3‧‧‧方位方向
6-6‧‧‧折線
7-7‧‧‧折線
10‧‧‧環軸方向
11-11‧‧‧線
21‧‧‧主要圓周
22‧‧‧次要圓周
50‧‧‧工件
100‧‧‧系統
110‧‧‧外殼
115‧‧‧晶元介面
120‧‧‧使用者介面120
130‧‧‧電漿處理單元
132‧‧‧遠端電漿源
133‧‧‧噴嘴
134‧‧‧處理腔室
135‧‧‧晶元基座
137‧‧‧擴散板
140‧‧‧控制器
150‧‧‧電源
155‧‧‧氣體
160‧‧‧真空
165‧‧‧射頻產生器
170‧‧‧電源
200‧‧‧電漿源
210(1)‧‧‧電漿阻件
210(2)‧‧‧電漿阻件
210(3)‧‧‧電漿阻件
210(4)‧‧‧電漿阻件
210(5)‧‧‧電漿阻件
210(6)‧‧‧電漿阻件
210(7)‧‧‧電漿阻件
210(8)‧‧‧電漿阻件
210(9)‧‧‧電漿阻件
210(10)‧‧‧電漿阻件
210(11)‧‧‧電漿阻件
210(12)‧‧‧電漿阻件
210(13)‧‧‧電漿阻件
211(1)‧‧‧軸向側
211(2)‧‧‧軸向側
220(1)‧‧‧磁構件
220(2)‧‧‧磁構件
220(3)‧‧‧磁構件
230‧‧‧電感線圈
240‧‧‧介電斷路器
245‧‧‧金屬區段
250‧‧‧出口
260‧‧‧入口孔
270‧‧‧出口孔
275‧‧‧冷卻管
280‧‧‧電漿腔
299‧‧‧電漿
300‧‧‧電漿源
400‧‧‧電漿源
500‧‧‧電漿源
600‧‧‧電漿源
610‧‧‧平板
615‧‧‧溝槽
620‧‧‧O型環
700‧‧‧電漿源
710‧‧‧平板
715‧‧‧溝槽
720‧‧‧介電障壁
775‧‧‧冷卻管
800‧‧‧電漿源
810‧‧‧入口氣體歧管
820‧‧‧入口
830‧‧‧孔
850‧‧‧進線氣體入口孔
900‧‧‧電漿源
910‧‧‧平板
920‧‧‧角度
1000‧‧‧電漿源
1100‧‧‧電漿源
1200‧‧‧電漿晶元處理系統
1201‧‧‧電漿源
1202‧‧‧電漿源
1210‧‧‧底板
1232‧‧‧頂面
1234‧‧‧處理腔室
1235‧‧‧基座
1237‧‧‧擴散板
1239‧‧‧氣體通道
1241‧‧‧輸出氣體孔
1247‧‧‧孔
1270‧‧‧氣體入口
1300‧‧‧電漿晶元處理系統
1301‧‧‧電漿源
1302‧‧‧電漿源
1332‧‧‧頂板
1334‧‧‧處理腔室
1335‧‧‧空間
1337‧‧‧空間
1355‧‧‧空間
1357‧‧‧空間
1360‧‧‧區域分隔器
1370‧‧‧開口
圖1示意性地繪示電漿處理系統的主要構件，依據一實施例。
圖2示意性地繪示直接出口環狀電漿源的受選構件，依據一實施例。
圖3示意性地繪示直接出口環狀電漿源的受選構件，依據一實施例。
圖4示意性地繪示直接出口環狀電漿源的受選構件，依據一實施例。
圖5示意性地繪示直接出口環狀電漿源的受選構件，依據一實施例。
圖6係圖5之直接出口環狀電漿源的示意剖視圖(於折線6-6處採取)。
圖7係圖5之直接出口環狀電漿源的示意剖視圖(於折線7-7處採取)。
圖8示意性地繪示具有電漿腔的直接出口環狀電漿源，該電漿腔係藉由在一平板附近安置電漿阻件來定義，依據一實施例。
圖9示意性地繪示具有電漿腔的另一直接出口環狀電漿源，該電漿腔係藉由在一平板附近安置電漿阻件來定義，依據一實施例。
圖10示意性地繪示直接出口環狀電漿源，圖示一入口氣體歧管，該入口氣體歧管向其中的電漿腔供應源氣體，依據一實施例。
圖11係沿圖10之線11-11的示意剖視圖。
圖12示意性地繪示具有用於引入源氣體之進線氣體注射接口的直接出口環狀電漿源的電漿阻件，依據一實施例。
圖13示意性地繪示具有用於引入源氣體之複數個進線氣體注射接口的直接出口環狀電漿源的電漿阻件，依據一實施例。
圖14示意性地繪示直接出口環狀電漿源的電漿阻件，圖示可如何相對於平板的表面法線以複數個角度定義出口孔，該平板形成其一個軸向側(axial side)，依據一實施例。
圖15A係一示意底視圖，繪示直接出口環狀電漿源，在該直接出口環狀電漿源中定義了四個出口孔，依據一實施例。
圖15B係一示意底視圖，繪示直接出口環狀電漿源，在該直接出口環狀電漿源中定義了六個出口孔，依據一實施例。
圖16以橫截面圖示意性地繪示一電漿晶元處理系統，該電漿晶元處理系統包括兩個直接出口環狀電漿源，依據一實施例。
圖17A示意性地繪示圖16之電漿處理系統之頂面的面朝上的示意平面圖，其中兩個直接環狀電漿源的底板特徵是可見的。
圖17B示意性地繪示圖16之電漿處理系統之擴散板的面朝上的示意平面圖。
圖18以橫截面圖示意性地繪示一電漿晶元處理系統，該電漿晶元處理系統包括兩個直接出口環狀電漿源，依據一實施例。
可藉由結合採用以下所述的繪圖來參照以下的詳細說明來了解本揭示案，其中類似的參考標號係在若干繪圖各處用以指類似的元件。注意的是，為了清楚說明的目的，繪圖中的某些構件可不按比例繪製。可藉由使用括號中的標號來指示項目的特定實例(例如電漿阻件210(1)、210(2)等等)，同時不具括號的標號指任何這樣的項目(例如電漿阻件210)。為了清楚說明，在圖示多個項目實例的實例中，只有實例中的某些部分可被標示。
圖1示意性地繪示電漿處理系統100的主要構件，依據一實施例。系統100係描繪為單一晶元、半導體晶元電漿處理系統，但對於本領域中具技藝者將是明確的是，本文中的技術及原理可施用於任何類型的電漿產生系統(例如並不一定處理晶元或半導體的系統)。亦應了解的是，圖1係簡化圖，供繪示系統100之受選的、主要的構件；實際處理系統相較於系統100將因而看起來不同且很可能包含額外的構件。
處理系統100包括用於晶元介面115、使用者介面120、電漿處理單元130、控制器140及一或更多個電源150的外殼110。處理系統100係由各種設施所支援，該等設施可包括氣體(或多種)155、電源170、真空160及可選的其他物。為了清楚說明，未圖示處理系統100內的內部管道及電性連接。
處理系統100係繪示為所謂的間接(或遠端)電漿處理系統，其在第一位置處產生電漿，且將電漿及/或電漿產物(例如離子、分子碎體、自由基、受激物種及類似物)引導至處理步驟發生的第二位置。因此，在圖1中，電漿處理單元130包括遠端電漿源132，該遠端電漿源132供應處理腔室134的電漿及/或電漿產物。處理腔室134包括一或更多個晶元基座135，晶元介面115在其上放置工件50以供處理。工件50例如是半導體晶元，但任何其他類型的工件亦可經受電漿處理。操作時，氣體(或多種)155係引進電漿源132，且射頻產生器(RF Gen) 165供應電力以點燃電漿源132內的電漿。電漿及/或電漿產物從電漿源132傳到處理腔室134，在該處理腔室134處，工件50被處理。一般現今的系統例如可通過噴嘴133及/或擴散板137來傳輸電漿及/或電漿產物，以試圖一致地散播及施用它們。實際的電漿系統可包括許多其他可選特徵或子系統，通過該等物，電漿、電漿產物及/或載體或額外處理氣體在電漿源132及處理腔室134之間流動及/或混合。
繪示為系統100之部分的構件係藉由示例的方式來列出，且並非詳盡的。亦可包括許多其他可能的構件(例如：壓力及/或流動控制器；氣體或電漿歧管或分佈裝置；離子抑制板；電極、磁心及/或其他電磁裝置；機械、壓力、溫度、化學、光學及/或電子感應器；晶元或其他工件的處理機制；檢視及/或其他存取接口；及類似物)，但為了清楚說明並未圖示。影響處理腔室134中之狀況的各種控制方案是可能的。例如，可藉由監測處理腔室134中的壓力及向上或向下調整所有氣體流動直到所測量的壓力是在所需壓力的某容忍度內為止來維持壓力。可藉由增加加熱器及溫度感應器來控制溫度。光學感應器可在產生時及/或在電漿與工件作用時偵測電漿發射尖峰。
亦為了清楚說明而未圖示系統100內所繪示之構件的內部連接及協作。除了RF產生器165及氣體155以外，其他表示性設施(例如真空160及/或一般用 途電源170)可與系統100連接。類似於系統100中所繪示的構件，繪示為與系統100連接的設施係欲為說明性而非詳盡的；其他類型的設施(例如加熱或冷卻流體、加壓空氣、網路性能、廢料處理系統及類似物)亦可與系統100連接，但為了清楚說明而未圖示。類似地，雖然以上說明提及的是，電漿在遠端電漿源132內被點燃，以下所討論的原理係可等效施用於所謂的「直接」電漿系統，該系統在實際的工件處理位置中產生電漿。
雖然間接電漿處理系統繪示於圖1中及此揭示案的其他處，對於本領域中具技藝者應是清楚的是，本文中所揭露的技術、裝置及方法亦可施用於直接電漿處理系統(例如在該處，電漿係於工件(或多個)的位置處點燃)。類似地，在實施例中，可重新組織、重新分佈及/或複製處理系統100的元件，例如：(1)提供具有多個處理腔室的單一處理系統；(2)對單一處理腔室提供多個遠端電漿源；(3)在單一處理腔室內提供多個工件夾具(例如晶元基座135)；(4)利用單一遠端電漿源來向多個處理腔室供應電漿產物；及/或(5)以串行/並行的組合提供電漿及氣體源，使得各種源氣體可被活化(例如至少暫時存在為電漿的部分)零、一、二或更多次，且在它們進入處理腔室之前或之後與其他源氣體混合，及類似物。還未是電漿之部分的氣體在本文中有時稱為「未活化」氣體。
圖2示意性地繪示直接出口環狀電漿源200的受選構件，依據一實施例。電漿源200係遠端電漿源132 (圖1)的示例。在本文中將使用以供描述圖2中及其他處所示之特徵的有用座標系統將軸向位置定義為沿環軸1、將徑向方向2定義為標示距環軸1的距離及將方位方向3定義為標示環軸1之周圍的旋轉方向。本文中所揭露的電漿源將被認為是定義了一環軸，該環軸經過電漿源的形心(不一定經過電漿源的實體特徵)，其中電漿源的電漿產生腔相對於環軸大致為環狀、徑向對稱的，且在垂直於環軸的平面中延伸於環軸周圍。環狀構件的主要圓周21係定義為在其外邊界處在方位上延伸於環軸周圍，例如如對於以下之電漿阻件210(1)所示的；為了清楚說明，主要圓周21並不圖示為一路延伸於圖2中之電漿阻件210(1)的周圍。次要圓周相對於環軸1以單一方位位置延伸於構件(例如電漿阻件210(1))周圍，例如如次要圓周22(圖2)所示。
電漿源200包括電漿阻件210(1)、磁構件220(1)及電感線圈230。磁構件220(1)至少部分地延伸於電漿阻件210(1)周圍，且電感線圈230至少部分地纏繞於磁構件220(1)周圍。雖然磁構件220(1)係以環狀圖示，磁構件220不一定要是環狀的、具有圓形橫截面或完全延伸於電漿阻件210周圍。電漿阻件210(1)可被抽空，且電漿源氣體可引進電漿阻件210(1)。在電漿源氣體在電漿阻件210(1)內的情況下，電流通過電感線圈230，在磁構件220(1)內誘發磁通量，這反過來在電漿阻件210(1)內誘發了電流，點燃了電漿。
電漿源200可因此看作類似於變壓器，其中主要電流流過電感線圈230且次要電流在電漿阻件210(1)內流動。有益地，電漿源200將次要電流約束在電漿阻件210(1)內所點燃的氣體及/或電漿內，因此，有益地，電漿阻件210(1)並不以定義完整方位電路的導體所形成。在某些實施例中，電漿阻件210(1)係以介電材料製造，然而，如以下所討論的，鋁通常是一個用以製作電漿阻件210(1)之至少一部分的便利材料。當電漿阻件210(1)係以鋁或另一實質導電的材料製作時，外場可被耦合進電漿阻件210(1)，且可藉由包括一或更多個介電斷路器240來中斷方位電路路徑，該等介電斷路器延伸於電漿阻件210(1)之次要圓周的周圍。
電漿阻件210(1)定義複數個輸出孔(於多個方位位置處，但是是在其單一軸向側上)，電漿產物係通過該等輸出孔分佈，以供用於電漿處理中。例如，在圖2中，輸出孔是不可見的，但與出口250連接以使用所示的箭頭方向來分佈電漿產物。藉由在電漿阻件210(1)之一個軸向側的周圍在多個方位位置處提供輸出口，電漿源200有益地提供出口250的圓形分佈，使得其中所提供的電漿產物距產生它們的電漿是等距的。這允許直接將電漿產物的圓形圖樣耦合至處理腔室，使得電漿產物以圓形及空間上寬廣的圖樣到達處理腔室，同時該圖樣的所有點距離電漿實質上是等距的。
本文中之直接出口環狀電漿源實施例的一個優點在於跨寬廣及圓形對稱的圖樣提供電漿產物，在該圖樣中，所有點距離電漿實質上是等距的。這最小化了重組效應及壁效應上的差異，該等效應在其他情況下會在不同的位置處影響處理結果。雖然一般的電感電漿系統可利用環狀電漿腔室來產生電漿產物，這樣的系統一般通過單一接口或噴嘴來分佈電漿產物，該接口或噴嘴提供了從電漿到工件上之各種位置的不同距離。
本文中之實施例的另一優點在於，在沒有對於內部表面之過量濺射損害的情況下，以相對的高壓產生電漿的能力，該濺射損害肇因於由高電場所加速的離子。本文中的實施例例如可操作在0.5托(Torr)或更少到100托或更多的壓力狀態下。其他類型的電感耦合電漿源通常將電漿暴露於高電場，這樣的場一般是從位於電漿阻件附近的電感線圈所引起。經歷如此場的電漿中離子以場的方向加速，通常撞擊內部電漿阻件壁且濺射其材料。濺射損害造成了降低的設備壽命及/或過量的維護需求，導致勞動及材料成本及工具停機時間。相較之下，除了沿環狀電漿腔的方向，本文中的設計最小化了電漿阻件對於電場的暴露，使得由磁構件所操控的磁通量在電漿本身內產生次要電流，而不引發會造成電漿阻件表面之濺射的電場。這反過來允許本文中的至少某些實施例相較於更昂貴的材料使用主要以具有未處理表面的鋁或具有特殊處理表面的鋁製作的電漿阻件。受處理表面仍是個選項。
本文中的磁構件220一般以鐵磁體形成。電感線圈230一般以銅形成，可選地為了減少外表皮的電阻率而鍍以銀。磁構件220及電感線圈230及電漿阻件210的某些區域或部分兩者可包括用於冷卻氣體或流體的通道(如本文中進一步討論的)，以移除由操作期間之電及磁損失所產生的熱。如上所述，電漿阻件210可以具有未處理表面或具有表面處理(例如陽極化、或氧化鋁、氮化鋁或氧化釔塗料)的鋁來製造。其他材料選擇亦是可能的，且可藉由考慮成本、可加工性、導電性、熱膨脹、熱散逸特性及與所要的氣體及電漿產物的相容性作出該等選擇。
圖3示意性地繪示直接出口環狀電漿源300的受選構件。電漿源300與電漿源200(圖2)共享許多相同構件，但包括電漿阻件210(2)、具有各別的電感線圈230的兩個磁構件220(1)。環軸1、徑向方向2及方位方向3係再次圖示於圖3中以供參考。為了進行對稱及有效的電漿生產，磁構件220(1)方位上係彼此相反地位於電漿阻件210(2)周圍。並且，電漿源300的電漿阻件210(2)包括四個介電斷路器240；兩個介電斷路器240係位於磁構件220(1)附近，同時其他兩個係從磁構件220(1)以90度間隔位於電漿阻件210(2)的圓周周圍。
圖4示意性地繪示直接出口環狀電漿源400的受選構件。電漿源400與電漿源200及300共享許多相同構件，但包括兩個磁構件220(2)，該等磁構件220(2)是U或馬蹄形的而非環狀的。使用U或馬蹄形磁構件幫助 利用直接出口環狀電漿源的某些構造，如以下所進一步描述的。
圖5示意性地繪示直接出口環狀電漿源500的受選構件。為了清楚說明，環軸1、徑向方向2及方位方向3並不再次圖示於圖5中，但仍如圖2中般定義。電漿源500與電漿源200、300及400共享許多相同構件。電漿阻件210(3)包括具有介電斷路器240(其中的兩者在圖5的視圖中被磁構件220(3)所隱藏)的金屬區段245。電漿阻件210(3)在軸向側211(1)(被標示，但隱藏在圖5的視圖中)上是扁平的。電漿阻件210(3)定義了區段245中的入口孔260。電漿阻件210(3)亦在軸向側211(2)上定義了出口孔270，如所示的。圖5中所示之入口孔260及出口孔270的位置及數量僅是說明性的；為了清楚說明，並非如此孔的所有實例皆被圖示或標示。實際上，入口孔260可經安置以提供將一致的源氣體引入電漿阻件210(3)，但可在其他情況下經佈置以供方便與電漿源500的其他元件整合。出口孔270一般較圖5中所示的更多，係經佈置以提供將一致的電漿產物分佈至相鄰的處理腔室，且可被定義於區段245或介電斷路器240中(參照圖6及7)。折線6-6及7-7表示了用以採取圖6及7中所示的剖面圖的平面。
圖6及7係分別於圖5之折線6-6及7-7處所採取之直接出口環狀電漿源500的示意剖面圖。圖6圖示通過介電斷路器240(在圖5的視圖中隱藏在磁構件220(3) 之下)中的一者所採取的剖面。環軸1及徑向方向2係再次圖示於圖6及7中以供參考；方位方向彎進或彎出圖6及7的平面，從環軸1的左邊到右邊改變符號。某些出口孔270係由電漿阻件210(3)之軸向側211(2)上的介電斷路器240所定義，如所示的。亦圖示電漿腔280及形成於其中的電漿299。圖7圖示通過金屬區段245中的一者而採取的剖面。某些出口孔270係由電漿阻件210(3)之軸向側211(2)上的介電斷路器240所定義，如所示的。亦圖示電漿腔280及形成於其中的電漿299。
圖6及7亦圖示通過磁構件220(3)的冷卻管275。冷卻管275可提供氣體或流體的流體連接，以移除由磁構件220(3)所耗散的熱；係對於本文中所述的任何磁構件考慮提供冷卻通道的特徵，雖然為了清楚說明而在許多情況下不圖示。類似地，冷卻管可提供於電感線圈230及/或各種其他電漿源元件中；為了清楚說明，在本文中圖示及描述了某些這樣的佈置同時不圖示及描述其他的佈置。
圖8示意性地繪示直接出口環狀電漿源600的部分，其中電漿腔280係藉由在平板610附近安置電漿阻件210(4)所定義。環軸方向10及徑向方向2係再次圖示於圖8中以供參考。實際環軸經過電漿腔280的形心(在圖8的視圖外面)；方位方向彎進或彎出圖8的平面。為了可製造性及維護的目的，提供由可輕易加工及替換的元件所定義的電漿腔可能是有益的。電漿源600因此藉由將 電漿阻件210(4)提供為相對簡單的形狀來定義電漿腔280，具有將電漿阻件210(4)密封至平板610的能力，該平板610在其中定義出口孔270。將電漿阻件210(4)密封至平板610的能力係由平板610中的溝槽615所提供，該等溝槽615接納一或更多個O型環620。當電漿腔280被抽空時，外部大氣壓力針對O型環620壓制電漿阻件210(4)以形成密封。在圖8中所示的實施例中，平板610係以介電材料形成。平板610以及介電斷路器240的合適材料包括陶瓷，特別是氮化鋁或氧化鋁，或熔凝石英。形成介電材料的平板610允許電漿阻件210(4)的介電斷路器240中斷方位電流，以便電漿299可形成；也就是說，若平板610曾以金屬形成且電耦合至電漿阻件210(4)，則由磁構件所誘發的電流僅會在所因此形成的方位電路周圍快速移動，減少了將電場耦合進電漿腔280的步驟。介電斷路器240在本文中完全延伸於電漿阻件210的次要圓周周圍；在方位方向上，介電斷路器240需要具有充足的寬度以抑制電漿阻件210的鄰近金屬段產生電弧，例如約四分之一吋對一吋。
圖9示意性地繪示直接出口環狀電漿源700，其具有藉由在平板710附近安置電漿阻件210(5)來定義的電漿腔280。環軸方向10及徑向方向2係再次圖示於圖9中以供參考；方位方向彎進及彎出圖9的平面。平面710係以導體形成，且在其接觸電漿阻件210(5)的表面處包括介電障壁720。介電障壁720因此使電漿阻件210(5) 相對於形成平板710之導體的短路現象失效，以中斷在其他情況下會形成方位電流。電漿源700因此藉由將電漿阻件210(5)提供為相對簡單的形狀來定義電漿腔280，具有將電漿阻件210(5)密封至平板710的能力，該平板710在其中定義出口孔270。將電漿阻件210(4)密封至平板710的能力係由電漿阻件210(5)中的溝槽715所提供，該等溝槽715接納一或更多個O型環620。當電漿腔280被抽空時，外部大氣壓力針對O型環620壓制平板710以形成密封。圖9中所繪示的設計允許電漿阻件210(5)及平板710被保持在不同電位；這允許控制通過輸出孔270朝處理位置所發射之電漿產物內自由基對離子的比率。圖9亦圖示冷卻管775，該冷卻管775提供平板710的氣體或流體冷卻。冷卻管775可被提供於本文中的其他元件(例如電漿阻件、電漿源或電漿腔室的頂或底板、或電漿腔室的側壁)中。
圖10示意性地繪示直接出口環狀電漿源800，圖示向本文中的電漿腔供應源氣體的入口氣體歧管810。徑向方向2及方位方向3係圖示於圖10中以供參考；環軸1延伸出圖10的平面。圖10中所繪示的頂視圖在電漿阻件210(6)的相反側上圖示磁構件220(3)，在任一側上具有氣體歧管810的對偶。氣體歧管810中的各者通過一或更多個入口820接收源氣體；雖然只有一個入口820繪示於圖10中，了解的是，入口820可在數量及位置上改變。氣體歧管810通過其中的孔將源氣體分佈進電漿 阻件210(6)，如現在討論的。折線11-11指示電漿源800的橫截面，其更詳細地繪示於圖11中。
圖11係沿圖10之折線11-11的示意剖面圖，繪示直接出口環狀電漿源800。環軸1及徑向方向2係再次圖示於圖11中以供參考；方位方向彎進或彎出圖11的平面，從環軸1的左邊到右邊改變符號。入口氣流係通過入口孔820引進氣體歧管810，接著通過由電漿阻件210(6)所定義的孔830傳進電漿腔280。入口孔820在圖11的視圖中係圖示為垂直的(例如與環軸1平行)，但可以其他角度來定義以在電漿腔280中促進混合或其他效果(亦參照圖12及13)。氣體歧管810可經建構以僅包含小的氣體容積，以便源氣體流(例如由上游閥或其他氣體管理設備所引入的)中的改變快速地傳進電漿腔280。氣體歧管810可包括壓力感應器，以提供關於其中之壓力的資訊，以促進了解影響電漿處理的因素。氣體歧管810的材料選擇對於與其相關聯的電漿阻件210而言是相同的；例如金屬(例如鋁)(具有或不具經處理表面)、或介電質(例如氧化鋁、氮化鋁)及其他陶瓷是可能的選擇。當氣體歧管810及其相關聯的電漿阻件210皆以金屬製作時，可能需要從電漿阻件210隔離氣體歧管810及/或在氣體歧管810中提供介電斷路器，以避免完成方位電路，如以上所討論的。
圖12示意性地繪示直接出口環狀電漿源的電漿阻件210(7)，該電漿阻件210(7)具有進線氣體入口孔 850以供引入源氣體。環軸1、徑向方向2及方位方向3係再次圖示於圖12中以供參考。進線氣體入口孔850實質上係與電漿腔280方位對準，如所示的。通過氣體入口孔850引入源氣體流給予受注入氣體方位速度，以促進在電漿阻件210(7)內各處進行混合。在實施例中，進線氣體入口孔850可準確地方位對準，如圖12中所示的，然而在其他實施例中，進線氣體入口孔可僅部分對準的，例如在其與電漿腔280相交處定義角度。以任何相對於環軸具有非零方位分量的角度經過進線氣體入口孔850的源氣體將在其被引進電漿腔280時在氣體中產生至少某些方位速度。
圖13示意性地繪示具有複數個進線氣體入口孔850之直接出口環狀電漿源的電漿阻件210(8)。環軸1、徑向方向2及方位方向3係再次圖示於圖13中以供參考。考慮的是，可利用任何數量的進線氣體入口孔850，且進線氣體入口孔850可以其他角度與氣體入口孔及/或與氣體歧管810的變體結合使用，如圖10及11中所示。
圖14示意性地繪示直接出口環狀電漿源900的電漿阻件210(9)，圖示出口孔270可如何相對於形成其一軸向側之平板910的表面法線以複數個角度920定義。環軸方向10及徑向方向2係再次圖示於圖14中以供參考；方位方向彎進及彎出圖14的平面。以複數個角度形成出口孔270可幫助將電漿產物廣泛地分佈進相鄰電漿處理裝置，以促進一致的處理。
圖15A係直接出口環狀電漿源1000的示意底視圖說明，其中定義了四個出口孔270。圖15的視圖示意性地描繪直接出口環狀電漿源1000的底板，其中該平板之另一側上之電漿阻件的大概邊界由折線所暗示。即使僅使用四個出口孔270，相較於僅從一個孔抽取輸出之先前技術的遠端電漿源，電漿源1000可提供顯著更多的一致處理。環軸1延伸進圖15A及15B的平面；徑向方向2及方位方向3係圖示於圖15A中以供參考，但為了清楚說明而在圖15B中被省略。圖15B係直接出口環狀電漿源1100的示意底視圖說明，其中定義了超過六個出口孔270。圖15B的視圖示意性地描繪直接出口環狀電漿源1100的底板，其中該平板之另一側上之電漿阻件的大概邊界由折線所暗示。相對應電漿阻件的幾何形狀及材料、磁構件及電感線圈的數量及放置可經最佳化，以在電漿阻件內產生一致的電漿分佈，使得通過出口孔270所抽取的電漿產物空間上跨電漿源1100一致。在實施例中，直接環狀電漿源可包括數百或數千個出口孔270。
圖16以橫截圖示意性地繪示電漿晶元處理系統1200，其包括兩個直接出口環狀電漿源1201及1202。為了清楚說明，僅標示處理系統1200的代表元件，且圖16係非按比例繪製。環軸1及徑向方向2係再次圖示於圖16中以供參考；方位方向彎進或彎出圖16的平面，從環軸1的左邊到右邊改變符號。電漿晶元處理系統定義處理腔室1234，該處理腔室1234在環軸1周圍徑向 對稱；因此電漿源1201可被視為外電漿源，同時電漿源1202可被視為內電漿源，其中電漿源1201及1202的環軸及電漿腔室1234的對稱軸皆重合。再次地，雖然圖16係針對晶元處理的實施例，了解的是，其他實施例可利用相同的原理以供處理其他工件。
電漿晶元處理系統1200利用電漿源1201及1202以產生電漿產物，且係配置以供在電漿產物從電漿的位置移動至正被處理的工件50時與未活化氣體可選地混合電漿產物。電漿晶元處理系統1200定義處理腔室1234，在該處理腔室1234中，基座1235將工件50定位於處置位置處，如所示的。於腔室1234之表面1232的頂上，電漿源1201形成外環形，且電漿源1202形成內環形。電漿源1201及1202可在具有或不具有氣體歧管810(如圖10及11中所示)的情況下從入口孔260或830接收源氣體(如分別於圖5及11中所示的)；這樣的結構係未圖示於圖16的視圖中。電漿源1201及1202中的各者包括各別的電漿阻件210(10)或210(11)，且利用電感線圈230及磁構件220(3)來從其中的源氣體產生電漿。電漿源1201及1202共享共同的底板1210，該共同底板1210定義孔270以供朝處理腔室1234分佈電漿產物。
底板1210中的孔270提供一致的、軸向的方向(例如在環軸的方向上)及短的路徑，以供從電漿產物起源處的電漿將電漿產物分佈至正被處理的工件50。在電漿源1201定義外環且電漿源1202定義內環的情況下 使用兩個電漿源1201及1202在對於工件50最佳化處理步驟之中心至邊緣的一致性時提供了顯著的自由度。可藉由變化特別是電漿源1201及1202的處理參數及測量在系統1200中所處理之測試及/或產品晶元上的效果來最佳化處理配方。可調整整體氣體流及提供至電漿源1201及/或1202的RF能量，直到效果跨所處理的各工件50是一致的為止。在實施例中，電漿源1201及1202相較於彼此可運行不同的反應氣體比率，及/或相較於彼此可利用完全不同的源氣體。
處理系統1200亦提供通過底板1210及頂面1232的氣體入口1270，以供供應要與電漿產物混合的未活化氣體(亦參照圖17A)。圖16及17A中所示之孔270及/或氣體入口1270的數量及分佈只是表示性的，且可在實施例間變化。
為了易於組裝部件及部件的可替換性，底板1210係在實施例中分離自腔室1234的頂面1232(如所示的)。也就是說，電漿源1201及1202可與底板1210組裝，及安裝為單一單元或從頂面1232移除為單一單元。然而，在實施例中，底板1210及頂面1232的特徵可結合於單一平板中。
圖16亦圖示可選的擴散板1237，該擴散板1237定義孔1247，以供電漿產物前行進處理腔室1234。擴散板1237亦可包括一或更多個氣體通道1239，以傳導可與電漿產物混合的未活化氣體。例如， 如圖16中所示，氣體通道1239與輸出氣體孔1241連接，該等輸出氣體孔1241定義於擴散板1237之面向腔室的一側中(亦參照圖17B)。圖16及17B中所示之孔1247及/或輸出氣體孔1241的數量及分佈僅為表示性的，且可在實施例間變化。
圖17A示意性地繪示電漿處理系統1200(圖16)之頂面1232的朝上示意平面圖，其中直接環狀電漿源1201及1202之底板1210的特徵是可見的。為了清楚說明，僅標示頂面1232及底板1210的代表性元件，且圖17並非按比例繪製。環軸、徑向及方位方向未圖示於圖17A及17B中，但可從其他繪圖中所示的那些方向確定。許多孔270從產生電漿產物的電漿向正被處理的工件提供了來自電漿源1201及1202之電漿產物的路徑(該等路徑在長度上非常短且一致)，跨腔室1234促進了一致的處理。例如，在實施例中，從電漿源1201及/或1202內之電漿到工件50上之任何位置的路徑可小於四吋。提供與孔270穿插的氣體入口1270允許與電漿產物混合未活化氣體。某些實施例在電漿產物及未活化氣體從圖17A(也就是不包括擴散器1237的處理系統1200)中所示的結構產生時，有益地以電漿產物及未活化氣體處理晶元。其他實施例可受益於由擴散板1237所進行之額外氣體及電漿產物的混合步驟。
圖17B示意性地繪示擴散器1237之朝上的示意平面圖。為了清楚說明，僅標示擴散板1237的代表性 特徵，且圖17B係非按比例繪製。孔1247(繪示為開口圓)一路延伸過擴散板1237，同時出口氣體孔1241(繪示為點)僅延伸進擴散板1237的底面，在該處，係從氣體通道1239將未活化氣體供應給該等出口氣體孔1241。擴散器1237促進進一步的混合及電漿產物對未活化氣體之比率的良好控制，這對於某些電漿處理可能是有益的，但對於其他者可能是不必要的。
圖18以橫截圖示意性地繪示電漿晶元處理系統1300，其包括兩個直接出口環狀電漿源1301及1302。再次地，雖然圖18是針對晶元處理的實施例，了解的是，其他實施例可利用相同原理以供處理其他工件。處理系統1300的許多特徵將被辨識為實質類似於先前所述的系統且不再次描述。環軸1及徑向方向2係再次圖示於圖18中以供參考；方位方向彎進或彎出圖18的平面，從環軸1的左邊到右邊改變符號。電漿晶元處理系統定義處理腔室1334，該處理腔室1334在環軸1周圍徑向對稱；因此電漿源1301可被視為外電漿源，同時電漿源1302可被視為內電漿源，其中電漿源1301及1302的環軸及電漿腔室1334的對稱軸皆重合。圖18繪示電漿阻件210(12)及210(13)的額外特徵，該額外特徵係與下層空間開放性流體連通，而不受底板所約束。圖18亦繪示區域分隔器1360。
類似於電漿源1201及1202的各別位置，電漿源1301及1302在處理腔室1334頂上定義內及外環形。 電漿源1301及1302可在具有或不具有氣體歧管810(如圖10及11中所示)的情況下從入口孔260或830接收源氣體(如分別於圖5及11中所示的)；這樣的結構係未圖示於圖18的視圖中。在處理腔室1334內，基座1335定位工件50以供處理。電漿阻件210(12)及/或210(13)在其第一軸向側上形成實質方位性連續的開口1370，也就是說，電漿源1301及1302在第一軸向側上實質上並不被約束，先前所討論的電漿源1201、1202及其他者亦是如此。開口1370在它們通過頂板1332以方位方向顯著延伸的方面而言可為實質方位性連續的，然而，在此背景下，「實質方位性連續」並不排除中斷開口1370以對於頂板1332的徑向內部分提供機械支持；開口相對應於任一電漿源之主要圓周的至少約75%會被視為是實質方位性連續的。並且，電漿阻件210(12)及210(13)兩者定義實質方位性連續的開口並不是關鍵的；在實施例中，電漿阻件210(12)及210(13)中的一者定義實質方位性連續的開口同時另一者不是。因此，電漿源1301及1302的電漿腔係與在處理腔室1334之上部分中所形成的空間1355、1357流體連通，使得電漿產物將通過開口1370傳出電漿阻件210(12)及210(13)而進入空間1355及1357。從空間1355、1357，電漿產物通過擴散板1337傳進處理腔室1334。
電漿晶元處理系統1300當然可包括用於向電漿源1301及1302供應源氣體的供給件(provision) (例如結合圖10-13所述的個別氣體入口孔及/或氣體歧管)及用於向電漿產物增加進一步氣體的供給件(例如圖16、17A及17B中所繪示的氣體入口1270及/或氣體通道1239)。
電漿阻件210(12)及210(13)的開口設計意味著，各電漿阻件下之空間1355、1357中之各者中的壓力將實質由到各別電漿阻件的輸入氣體流所決定。可因此藉由使用區域分隔器1360來維持空間1355及1357的分離。區域分隔器1360是一圓形特徵，該圓形特徵在其完整圓周周圍接觸頂板1332及擴散板1337兩者；圖18的橫截面圖僅圖示通過橫截平面之區域分隔器1360的兩個部分。區域分隔器1360一般係以介電材料形成，且強制實行供應至處理腔室1334之中心區域及邊緣區域的電漿產物之間的分離。在實施例中，此分離可用以在處理腔室1334中單獨控制中心及邊緣處理效果，且因此用以最佳化工件50處之中心至邊緣的處理一致性。
用於向電漿源1301及1302供應源氣體的供給件可獨立控制，以便處理腔室之中心區域及邊緣區域處(例如大約相對應於分別最受電漿源1302及1301影響的那些區域)的處理效果可為了最佳的處理一致性而被調整。對於電漿源1301及1302之源氣體的獨立可控性無論區域分隔器1360是否存在可是有益的。
從前述說明，應清楚的是，一、二或更多個環狀電漿源可用以藉由沿到處理腔室的短傳播路徑從電漿 源的軸向側抽取電漿產物，來向處理腔室提供電漿產物的一致分佈。複數個環狀電漿源可經安置以具有構件及到處理腔室之電漿產物的最短傳播路徑，該等構件例如為各別的電漿阻件、電漿阻件的介電斷路器、磁構件、電感線圈、冷卻裝置、輸出孔、入口氣體歧管及為了最佳的一致性而佈置的其他相關聯構件。
已描述若干實施例，將由本領域中具技藝的該等人所辨識的是，可使用各種修改、替代結構及等效物而不脫離本發明的精神。此外，未描述許多熟知的處理及構件，以避免不必要地模糊了本發明。據此，不應將以上說明當作本發明的限制。
凡提供了值的範圍，則了解的是，亦具體揭露了該範圍之上及下限之間的各中間值(高達下限之單位的十倍，除非在其他情況下上下文清楚地指示)。係包括任何經陳述的值或經陳述範圍中的中間值及該經陳述範圍中的任何其他經陳述或中間的值之間的各個較小範圍。這些較小範圍的上及下限可獨立地被包括或排除於範圍中，且包括任一限值、皆不包括該等限值或皆包括該等限值的各個範圍亦包括在本發明中，受制於經陳述範圍中之任何具體排除的限值。凡經陳述的範圍包括該等限值中的一者或兩者，則亦包括排除該等經包括之限值中之任一者或兩者的範圍。
如本文中及隨附請求項中所使用的，單數形式「一個(a)」、「一個(an)」及「該(the)」包括 了複數的指涉對象，除非在其他情況下上下文清楚指示。因此，例如，對於「一處理」的指稱包括了複數個這樣的處理，且對於「該電極」的指稱包括了對於一或更多個電極及其對本領域中具技藝的該等人是熟知之等效物的指稱，以此類推。並且，用字「包括(comprise)」、「包括(comprising)」、「包括(include)」、「包括(including)」及「包括(includes)」當用在此說明書中及以下請求項中時，係欲指定所陳述特徵、整數、元件或步驟的存在，但它們並不排除一或更多個其他特徵、整數、元件、步驟、動作或群組的存在或增加。
50‧‧‧工件
100‧‧‧系統
110‧‧‧外殼
115‧‧‧晶元介面
120‧‧‧使用者介面120
130‧‧‧電漿處理單元
132‧‧‧遠端電漿源
133‧‧‧噴嘴
134‧‧‧處理腔室
135‧‧‧晶元基座
137‧‧‧擴散板
140‧‧‧控制器
150‧‧‧電源
155‧‧‧氣體
160‧‧‧真空
165‧‧‧射頻產生器
170‧‧‧電源

Claims (17)

  1. 一種用於供應電漿產物的裝置，包括：一電漿產生阻件，在其中定義一環狀電漿腔，該電漿腔的一形狀在一環軸周圍係實質對稱的，該環軸定義該電漿產生阻件的一第一及第二軸向側；及一磁構件，相對於該環軸以一個方位位置至少部分地圍繞該電漿產生阻件，使得該磁構件內的一磁通量將一相對應電場誘發進該電漿腔，以從一或更多個源氣體產生一電漿，該電漿形成電漿產物；其中該電漿產生阻件通過複數個輸出孔供應該電漿產物，該複數個輸出孔係在該第一軸向側上由該電漿產生阻件所定義。
  2. 如請求項1所述之用於供應電漿產物的裝置，其中該電漿產生阻件將至少四個孔定義為該複數個孔，該四個孔係以約九十度的間隔在方位上分隔。
  3. 如請求項1所述之用於供應電漿產物的裝置，其中該電漿產生阻件將至少一百個孔定義為該複數個孔。
  4. 如請求項1所述之用於供應電漿產物的裝置，其中該電漿產生阻件將至少一百個孔定義為該複數個孔。
  5. 如請求項1所述之用於供應電漿產物的裝 置，其中該複數個輸出孔相對於該環軸定義複數個角度。
  6. 如請求項1所述之用於供應電漿產物的裝置，其中該電漿產生阻件定義用於向該電漿腔供應該一或更多個源氣體的一或更多個入口孔。
  7. 如請求項6所述之用於供應電漿產物的裝置，進一步包括一入口氣體歧管，該入口氣體歧管係安置於該電漿產生阻件的該第二軸向側附近，該一或更多個入口孔包括在該第二軸向側上由該電漿產生阻件所定義的複數個孔，以供從該入口氣體歧管向該電漿腔供應該一或更多個源氣體。
  8. 如請求項1所述之用於供應電漿產物的裝置，其中該一或更多個入口孔中的至少一者相對於該環軸定義一非零方位角。
  9. 如請求項1所述之用於供應電漿產物的裝置，其中該電漿產生阻件包括鋁。
  10. 如請求項9所述之用於供應電漿產物的裝置，其中該電漿產生阻件包括至少一個介電斷路器，該至少一個介電斷路器中斷由該電場所誘發的方位電流。
  11. 如請求項10所述之用於供應電漿產物的裝置，其中該介電斷路器包括複數個介電斷路器，該 複數個介電斷路器方位上實質對稱地分佈於該電漿產生阻件周圍。
  12. 如請求項1所述之用於供應電漿產物的裝置，其中該電漿產生阻件包括：一第一構件，在其徑向朝內、徑向朝外及第二軸向的側上約束該電漿產生腔；及該第一軸向側上的一平板，該平板在該第一構件之徑向朝內及徑向朝外的邊緣上接觸該第一構件，該複數個輸出孔係由該平板所定義。
  13. 如請求項1所述之用於供應電漿產物的裝置，其中該電漿產生阻件包括：一第一構件，包括將該電漿腔約束在一第二軸向側上的一徑向朝內表面、一徑向朝外表面及一軸向表面；及該第一軸向側上的一平板，該平板在該第一構件的邊緣上接觸該徑向朝內及徑向朝外表面，該複數個孔係通過該平板而定義。
  14. 如請求項1所述之用於供應電漿產物的裝置，該入口氣體歧管在該電漿產生腔的一第二軸向側上通過複數個接口供應該一或更多個源氣體。
  15. 如請求項1所述之用於供應電漿產物的裝置，該入口氣體歧管通過一或更多個接口供應該一或 更多個源氣體，該一或更多個接口以一角度將該一或更多個源氣體注進該電漿產生腔，該角度實質正切於該電漿產生腔的一中心軸。
  16. 一種用於供應電漿產物的裝置，包括：一電漿產生槽，定義一電漿腔，該電漿腔在一環軸周圍係實質對稱的，該電漿產生槽包括：一電漿產生阻件，在該電漿產生阻件之徑向朝內、徑向朝外及第二軸向的側上約束該電漿腔，且定義一或更多個孔，以供將一或更多個源氣體引進該電漿腔，一平板，安置於該電漿腔的一第一軸向側上，該平板通過該平板定義複數個孔，該複數個孔在方位上係分佈於該電漿腔周圍，其中該電漿產生阻件的徑向朝內及徑向朝外邊緣鄰接該平板以形成該電漿產生槽，實質上圍住該電漿腔；第一及第二電感線圈；一電源，用於在該第一及第二電感線圈內提供電流；及第一及第二磁構件，至少部分地延伸於該電漿產生阻件周圍，且分別安置於該第一及第二電感線圈附近，以便該等電流在該等磁構件內誘發磁通量，且該 等磁構件內的該等磁通量在該電漿腔內產生方位電場以從該一或更多個源氣體形成一電漿，形成電漿產物；使得通過該平板的該等孔對於該等電漿產物向一相鄰區域提供流體連通，以供用在電漿處理中。
  17. 一種提供電漿產物的方法，包括以下步驟：將一源氣體流引進一電漿產生阻件，該電漿產生阻件在其中定義一環狀電漿腔，該電漿腔在一環軸周圍係實質對稱的，該電漿產生阻件僅在其一第一軸向側上相對於該環軸定義複數個輸出孔，該等輸出孔實質在方位上係分佈於該電漿產生阻件周圍；將一電場誘發進該電漿腔，以從該源氣體流產生一電漿，該電漿形成該等電漿產物；及將該等電漿產物傳過由該電漿產生阻件所定義的該複數個輸出孔。
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JP6754765B2 (ja) 2020-09-16
WO2016094044A1 (en) 2016-06-16
CN107004562A (zh) 2017-08-01
US20160163512A1 (en) 2016-06-09
KR20170092667A (ko) 2017-08-11
KR102478872B1 (ko) 2022-12-19
TWI701703B (zh) 2020-08-11

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