CN106449684A - 高速光敏设备及相关方法 - Google Patents
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Abstract
本发明提供一种高速光电子设备及相关方法。在一个方面,例如,高速光电子设备可以包括具有入射光表面的硅材料、在硅材料中形成半导体结的第一掺杂区和第二掺杂区以及耦合到该硅材料并定位成与电磁辐射相互作用的纹理区。对于具有从大约800nm到大约1200nm的至少一个波长的电磁辐射,该光电子设备具有从大约1皮秒到大约5纳秒的响应时间和大于或等于大约0.4A/W的灵敏度。
Description
本申请是于2011年6月20日提交的名称为“高速光敏设备及相关方法”的中国专利申请201180039710.X(PCT/US2011/041108)的分案申请。
优先权数据
本申请要求2010年6月18日提交的美国临时专利申请序列号61/356,536的权益,其内容以参考方式合并于此。
背景技术
许多成像应用例如免手持姿态控制、视频游戏、医疗和机器视觉以及通信应用使用各种光电子设备,例如光电探测器和光电探测器的成像阵列。通信应用通常使用例如光纤网络,因为这种网络在光纤经历较低的信号损失的近红外波长的光中效果良好。激光标记和距离测定的应用一般使用具有近红外波长例如1064nm的激光。其他应用例如深度感知应用使用能够检测近红外波长例如850nm或940nm的成像器。这些波长一般由用砷化镓(GaAs)制造的发光二极管或激光二极管生成。所有这些应用都要求探测器或探测器阵列具有快速响应时间,一般比利用厚的(例如,大于100μm)硅有源层可以实现的响应时间更快。因此,用于这些应用的硅设备通常是薄的,并且将具体设计考虑考虑在内以便降低响应时间。然而,随着硅有源层变得更薄,在更长波长(例如,850nm、940nm和1064nm)下的响应比厚硅设备层的响应低得多。另一方面,在更长波长下具有更高响应的厚硅设备具有缓慢的响应时间并且难以耗尽。
发明内容
本发明提供高速光电子设备及相关方法。在一个方面,例如,高速光电子设备可以包括具有入射光表面的硅材料、在硅材料中形成半导体结的第一掺杂区和第二掺杂区以及耦合到硅材料并被定位成与电磁辐射相互作用的纹理区。对于具有从大约800nm到大约1200nm的至少一个波长的电磁辐射,该光电子设备具有从大约1皮秒到大约5纳秒的响应时间和大于或等于大约0.4A/W的灵敏度。在另一方面,对于具有从大约800nm到大约1200nm的至少一个波长的电磁辐射,该光电子设备具有大于或等于大约0.5A/W的灵敏度。在另一方面,对于具有大约850nm的波长的电磁辐射,该光电子设备具有大于或等于大约0.45A/W的灵敏度。在进一步的方面,该硅材料具有从大约1μm到大约100μm的厚度。在更进一步的方面,在工作期间该设备的暗电流是从大约100pA/cm2到大约10nA/cm2。
在另一个方面,一种高速光电子设备可以包括具有入射光表面的硅材料、在硅材料中形成半导体结的第一掺杂区和第二掺杂区以及耦合到硅材料并被定位成与电磁辐射相互作用的纹理区。对于具有大约940nm的波长的电磁辐射,该光电子设备具有从大约1皮秒到大约5纳秒的响应时间和大于或等于大约0.3A/W的灵敏度。
在另一个方面,一种高速光电子设备可以包括具有入射光表面的硅材料、在硅材料中形成半导体结的第一掺杂区和第二掺杂区以及耦合到硅材料并被定位成与电磁辐射相互作用的纹理区。对于具有大约1060nm的波长的电磁辐射,该光电子设备具有从大约1皮秒到大约5纳秒的响应时间和大于或等于大约0.05A/W的灵敏度。
在另一个方面,一种光电二极管阵列可以包括具有入射光表面的硅材料,在硅材料中的至少两个光电二极管,每个光电二极管包括形成半导体结的第一掺杂区和第二掺杂区,以及耦合到硅材料并被定位成与电磁辐射相互作用的纹理区。对于具有从大约800nm到大约1200nm的至少一个波长的电磁辐射,该光电二极管阵列具有从大约1皮秒到大约5纳秒的响应时间和大于或等于大约0.4A/W的灵敏度。在一个方面,该硅材料具有从大约1μm到大约100μm的厚度。
在另一个方面,一种提高光电子设备的速度的方法包括对硅材料中的至少两个区进行掺杂以形成至少一个结,以及使得硅材料具有纹理结构,从而形成定位成与电磁辐射相互作用的纹理区。对于具有从大约800nm到大约1200nm的至少一个波长的电磁辐射,该光电子设备具有从大约1皮秒到大约5纳秒的响应时间和大于或等于大约0.4A/W的灵敏度。在一个方面,该设备可以包括用于将载流子从与结相反的一侧带到结区的额外掺杂区。
附图说明
图1是根据本发明的一个方面与基于硅但是具有纹理区的光电探测设备的吸收特性相比较的基于标准硅的快速(或薄的)光电探测器设备的吸收特性的图形表示;
图2是根据本发明的另一方面的光敏设备的示意图;
图3是根据本发明的再一方面的光敏设备的示意图;
图4是根据本发明的进一步方面的光敏设备的示意图;
图5是根据本发明的更进一步方面的光敏设备的示意图;
图6是根据本发明的另一方面的光敏设备的示意图;
图7是根据本发明的再一方面的光敏设备的示意图;
图8是根据本发明的进一步方面的光敏阵列设备的示意图;
图9示出根据本发明的另一方面的渡越时间(time of flight)测量;
图10a是根据本发明的另一方面的光学成像器阵列的像素结构的示意图;
图10b是根据本发明的另一方面的光学成像器阵列的像素结构的示意图;
图10c是根据本发明的另一方面的光学成像器阵列的像素结构的示意图;
图11是根据本发明的另一方面的六晶体管成像器的示意图;
图12是根据本发明的另一方面的十一晶体管成像器的示意图;
图13是根据本发明的更进一步方面的光敏阵列设备的示意图;
图14是根据本发明的另一方面的光敏阵列设备的示意图;以及
图15描述根据本发明的再一方面的提高光电子设备的速度的方法。
具体实施方式
在本文中描述本发明之前,应该理解的是,本发明不限于特定的结构、处理步骤或本文中公开的材料,而是延伸至本领域普通技术人员将认识到的这些内容的等价物。还应当理解的是,本文中使用的术语仅仅是为了描述特定的实施例而非进行限制。
定义
将根据以下阐述的定义使用下面的术语。
应当注意,如说明书和随附权利要求中所用,单数形式“一个”和“该”可以包括复数个对象,除非上下文中以其他方式明确地指示。因此,例如,“一种掺杂剂”的指代内容可以包括一种或更多种此类掺杂剂,“该层”的指代内容可以包括指代一个或更多个此类层。
如本文所用,“量子效率”(QE)被定义为入射到光电子设备上的光子被转换成电子的百分比。外部量子效率(EQE)被定义为针对每一入射光子在设备外部获得的电流。因此EQE同时取决于光子的吸收和电荷的采集。由于复合效应和光损耗(例如,传输损耗和反射损耗),EQE比QE更低。
如本文所用,“灵敏度”是探测器系统的输入-输出增益的度量。在光电探测器的情况中,灵敏度是每一光输入的电输出的度量。光电探测器的灵敏度用入射的辐射功率的每瓦特安培数表示。此外,灵敏度是入射辐射的波长和设备特性例如制造设备的材料的能带隙的函数。等式I中示出灵敏度(Rλ)的一个表达式,其中η是针对给定波长(λ)的探测器的外部量子效率,q是电子电荷,h是普朗克常量,以及v是光频率。
如本文所用,术语“电磁辐射”和“光”可以交替地使用,并且可以表示宽范围内的波长,包括可见光波长(大约350nm到800nm)和不可见光波长(大于大约800nm或小于350nm)。红外光谱通常被描述为包括大约800nm到1300nm的波长的近红外光谱部分、包括大约1300nm到3μm(微米)的波长的短波红外光谱部分以及包括大于大约3μm至高达大约30μm的波长的中长波红外(或热红外)光谱部分。这些在本文中一般统称为电磁光谱的“红外”部分,除非另有说明。
如本文所用,“响应时间”是指探测器设备的上升时间或下降时间。在一个方面,“上升时间”是光与设备相互作用生成的电信号的前沿输出的峰值振幅的10%位置和90%位置之间的时间差。“下降时间”被测量为电信号后沿的90%位置和10%位置之间的时间差。在某些方面,下降时间可以被称为衰减时间。
如本文所用,术语“无序表面”和“纹理表面”可以交替地使用,并且指代具有纳米至微米尺寸的表面变化的拓扑结构的表面。此类表面拓扑结构可以通过激光脉冲或多个激光脉冲的照射、化学蚀刻、光刻图案化、多个同时激光脉冲的干涉或反应离子蚀刻来形成。尽管此类表面的特征可以根据所使用的材料和技术而改变,但是在一个方面,该表面可以是几百纳米厚并且由纳米微晶(例如,从大约10纳米到大约50纳米)和纳米孔构成。在另一个方面,该表面可以包括微米尺寸的结构(例如,大约1μm到大约60μm)。在又一个方面,该表面可以包括从大约5nm到大约500μm的纳米尺寸和/或微米尺寸的结构。
如本文所用,术语“能流”是指来自穿过单位面积的单个激光辐射脉冲的能量。换句话说,“能流”可以被描述为一个激光脉冲的能量密度。
如本文所用,术语“表面修饰”和“表面改性”是指利用激光照射、化学蚀刻、反应离子蚀刻、光刻图案化等改变半导体材料的表面。在一个具体方面,表面改性可以包括主要利用激光辐射的过程或激光辐射结合掺杂的过程,因而激光辐射促进掺杂剂掺入半导体材料的表面。因此,在一个方面,表面改性包括半导体材料的掺杂。
如本文所用,术语“目标区”是指将要进行掺杂或表面改性的半导体材料的区域。半导体材料的目标区可以随着表面修饰过程的进行而改变。例如,在对第一目标区进行掺杂或表面改性之后,可以在相同半导体材料上选择第二目标区。
如本文所用,术语“检测/探测”是指电磁辐射的感测、吸收和/或采集。
如本文所用,术语“充分地/基本”是指行为、特征、特性、状态、结构、物品或结果的完全或接近完全的范围或程度。例如,被“充分”包围的对象是指该对象被完全包围或接近完全包围。偏离绝对完全性的精确的可允许程度在某些情况下取决于特定的背景。然而,一般来说,接近完全的整体结果将与绝对的总体完全可获得的整体结果相同。当用于负面含义时,使用“充分地/基本”同样适用于指代完全或接近完全缺乏行为、特征、特性、状态、结构、物品或结果。例如,“基本无”粒子的成分将完全缺乏粒子或接近完全地缺乏粒子,其效果与完全缺乏粒子是相同的。换句话说,“基本无”配料或元素的成分实际上仍可以包含该项,只要其没有可测量的效果。
如本文所用,术语“大约”被用于通过假设给定值可以“稍微高于”或“稍微低于”端点而向数值范围端点提供灵活性。
如本文所用,为了方便起见,多个物品、结构元件、组成元素和/或材料可以呈现在公共列表中。然而,这些列表应当解释为,列表的每个构件被单独地确定为分离和唯一的构件。因此,不应当仅基于呈现在公共组中并且没有相反的指示而将此类列表的单独构件解释为相同列表的任何其他构件的实际上的等效物。
浓度、数量和其他数值数据可能在此通过范围格式来表达或呈现。应该理解的是,使用该范围格式仅是为了方便和简洁起见,因此,该范围格式应当灵活地解释为不仅包括明确列举为范围极限的数值,而且包括涵盖在该范围内的所有单独的数值或子范围,就好像明确地列举每个数值和子范围一样。作为例证,“大约1到大约5”的数值范围应当解释为不仅包括明确列举的大约1到大约5的值,而且也包括在指示范围内的单独值和子范围。因此,包含在该数值范围内的是单独值例如2、3、4和子范围例如1-3、2-4和3-5等,以及单独的1、2、3、4和5。
该相同的原理适用于只列举一个数值作为最小值或最大值的范围。而且,无论所描述的范围或特征的广度如何,都应该适用这种解释。
本公开内容
光电子设备的许多应用可以得益于高速操作。例如,用在诸如传输数据、激光测距、激光标记、渡越时间(time of flight)成像等应用中的光电探测器可能是数据可以传输多快的限制因素。因此,具有更快灵敏度的光电探测器可以相应地以更高的速率接收数据。许多光电子设备例如光电探测器的速度至少部分取决于电荷载流子掠过光电探测器的速度。载流子掠过光电探测器的速度可能取决于载流子需要前进的距离、载流子是否在具有电场的设备区内生成以及载流子在设备层内的缺陷中被捕获或减慢的可能性。在某些情况下,偏压可以被施加于光电探测器,从而通过增加载流子的漂移速度而降低响应时间。此外,许多传统的数据通信应用使用红光光谱和红外光谱中的电磁辐射作为数据载流子。在典型的硅设备中,红光光谱和红外光谱中的电磁辐射生成深入硅设备的载流子,因而增加载流子需要前进从而被采集的距离。因此,可能有利的是,光电探测器在薄设备中吸收红外辐射以便提高通信速度并降低暗电流。
硅是一种可以用作光电探测器半导体的材料。然而,薄硅光电探测器在检测红外波长方面的能力有限,特别是当在较高数据通信速度下运行时。传统的硅材料需要充分的吸收深度以检测波长大于大约700nm的光子。虽然可见光能够在硅中相对浅的深度处被吸收,但在薄晶片深度(例如,大约100μm)的硅中更长波长(例如,900nm)的吸收较差(如果有的话)。因为对硅基光电探测器而言短波红外光是几乎完全可穿透的,所以传统上已经使用其他材料(例如,InGaAs)来检测波长大于大约1100nm的红外电磁辐射。然而,利用所述其他材料是昂贵的,相对于硅设备增加了暗电流,并且限制了可见光谱(即可见光,350nm-800nm)的电磁辐射的检测。因此,通常使用硅是因为它的制造相对便宜,并且能够被用于检测可见光谱中的波长。
因此,本公开提供了将薄硅设备的电磁辐射吸收范围增加到红外区的光电子设备及相关方法,因而允许此类设备吸收可见光和红外光。此外,与在红外光谱中工作的传统薄硅设备相比,此类设备可以被配置为以更高的数据速率工作并且具有增加的外部量子效率和灵敏度。在一个方面,例如,提供的硅光电探测器包括纹理区以便增加在红外波长的吸收、外部量子效率并降低响应时间。该独特且新颖的设备能够在可见光谱和红外光谱中以高数据速率工作。因此硅基设备的这种灵敏度增加可以降低光电探测器的处理成本,降低光源所需的功率,增加3D类型成像的深度分辨率,增加数据能够传输的距离,改进激光测距,以及增加使用更长波长的电磁辐射进行数据通信的机会。
在一个方面,例如,提供一种高速光电子设备。该设备可以包括具有入射光表面的硅材料、在硅材料中形成半导体结的第一掺杂区和第二掺杂区以及耦合到硅材料并被定位成与电磁辐射相互作用的纹理区。对于具有从大约800nm到大约1200nm的至少一个波长的电磁辐射,该光电子设备具有从大约1皮秒到大约5纳秒的响应时间和大于或等于大约0.4A/W的灵敏度。例如,图1示出了吸收/灵敏度图,其中虚线12表示基于标准快速硅设备的光电探测器设备的吸收特性,实线14表示基于硅但具有纹理区的光电探测设备的吸收特性。很明显,在红外区即800nm到1200nm的区域中,标准快速硅光电二极管的吸收导致相对低的灵敏度。
此外,在一个方面,该光电子设备的响应时间是从大约1皮秒到大约1纳秒。在另一个方面,该光电子设备的响应时间是从大约1皮秒到大约500皮秒。
在另一个方面,对于具有从大约800nm到大约1200nm的至少一个波长的电磁辐射,该光电子设备具有大于或等于大约0.5A/W的灵敏度。
在又一个方面,对于具有大约850nm的波长的电磁辐射,该光电子设备具有大于或等于大约0.45A/W的灵敏度。在进一步的方面,对于具有大约940nm的波长的电磁辐射,该光电子设备具有大于或等于大约0.3A/W的灵敏度。在更进一步的方面,对于具有大约1060nm的波长的电磁辐射,该光电子设备具有大于或等于大约0.05A/W的灵敏度。
在某些方面,设备的厚度可以指示灵敏度和响应时间。然而,标准硅设备需要比较厚即大于100μm,从而检测在红外光谱中的波长,并且这种厚设备的探测导致缓慢的响应和较高的暗电流。现在已经发现,定位成与电磁辐射相互作用的纹理区可以提高设备对红外光的吸收,因而提高红外光灵敏度,同时允许快速操作。漫散射和反射可以导致吸收路径长度增加,特别是如果与全内反射结合起来,会导致硅光电二极管、光电探测器、光电二极管阵列等在红外光谱中的灵敏度大大改善。由于吸收路径长度的增加,所以较薄的硅材料可以用于吸收最高在红外区内的电磁辐射。较薄硅材料设备的一个优势是电荷载流子更快地掠过设备,因而降低响应时间。相反,至少部分由于散射,厚硅材料设备更慢地扫描从其中经过的电荷载流子。
因此,与传统的硅设备相比,本发明的设备通过增加更长波长的吸收路径长度来增加硅材料的吸收路径长度。硅光电探测器中的吸收深度是进入硅中的深度,在该深度处辐射强度降低至硅材料表面处的值的大约36%。增加的吸收路径长度导致吸收深度的明显减小或减小的表观或有效吸收深度。例如,可以减少硅的有效吸收深度,使得可以在小于或等于大约100μm的深度吸收更长的波长。通过增加吸收路径长度,这些设备能够在薄半导体材料内吸收更长的波长(例如,对于硅大于1000nm)。除了降低有效吸收深度之外,可以利用更薄的半导体材料降低响应时间。
因此,除此以外,根据本发明的一些方面的光电子设备提供在光谱的红外光部分的增强的响应以及在将电磁辐射转换成电信号的过程中的提高的响应和量子效率。同样地,比大约100μm更薄的设备在红外光谱中可以获得较高的量子效率和较高的速度。换句话说,在红外波长下该响应高于更厚设备中发现的响应。
在一个方面,例如图2中所示,光电子设备可以包括具有第一掺杂区24和与其关联的第二掺杂区26的硅材料22。因此,第一掺杂区和第二掺杂区形成半导体结。许多结构是可预期的,并且认为任何类型的结配置都在本发明的范围内。例如,第一掺杂区和第二掺杂区可以彼此远离、彼此接触、彼此交叠等。在某些情况下,本征区可以至少部分位于第一掺杂区和第二掺杂区之间。
光电子设备还可以包括耦合到硅材料22并被定位成与入射的电磁辐射29相互作用的纹理区28。在这种情况下,纹理区位于与第一掺杂区24和第二掺杂区26相对的硅材料的侧面上。穿过硅材料接触纹理区的电磁辐射可以被反射回来穿过硅材料,因此有效地增加硅材料的吸收路径长度。纹理区可以与硅材料的整个表面相关联或只与其一部分相关联。此外,在某些方面,纹理区可以被具体定位以最大化硅材料的吸收路径长度。在其他方面,第三掺杂可以被包括在纹理区附近,从而提高在纹理区附近生成的载流子的采集。
硅材料可以具有允许电磁辐射检测和转换功能的任何厚度,因此认为任何此类厚度的硅材料都在本发明的范围内。尽管认为任何厚度的硅材料都在本发明的范围内,但是在降低设备的响应时间和/或电容方面薄硅层材料是特别有利的。如前所述,与较厚的硅材料层相比,电荷载流子可以更快速地掠过更薄的硅材料层。硅越薄,电子/空穴需要穿过越少的材料以便被采集,并且生成的电荷载流子遇到将捕获或减慢载流子的采集的缺陷的可能性越低。因此,实施快速光子响应的一个目标是利用薄硅材料作为光电二极管的主体区。通过光电二极管的内建电势和施加的任何偏压,该设备可以接近耗尽电荷载流子,从而通过在电场中的漂移提供光生载流子的快速采集。保留在光电二极管的任何未耗尽区中的电荷载流子通过扩散运输来采集,这比漂移运输更慢。为此,期望使扩散可能占主导地位的任何区域的厚度比耗尽的漂移区薄得多。在具有适当掺杂的硅材料中,提供没有施加偏压的大约10μm的耗尽区。因此,在某些方面,可能有利的是使用厚度小于大约100μm或小于大约10μm的硅材料层。在另一方面,硅材料可以具有某一厚度和衬底掺杂浓度,使得所施加的偏压生成足够用于电荷载流子的饱和速度的电场。应当注意,在零偏压下操作本文公开的光电二极管可能导致噪声较低,但是响应时间较长。然而,当施加偏压时,暗电流增加,导致噪声较高,但是响应时间下降。如果入射的辐射信号较强,则可以补偿增加的暗电流。然而,利用更薄的设备层可以使增加的暗电流量最小化。
因此,在一个方面,硅材料具有从大约1μm到大约100μm的厚度。在另一个方面,硅材料具有从大约1μm到大约50μm的厚度。在又一方面,硅材料具有从大约5μm到大约10μm的厚度。在进一步的方面,硅材料具有从大约1μm到大约5μm的厚度。
如前所述,光电子设备的响应时间受到光生载流子横穿衬底厚度的通过时间(transit time)限制。通过利用小负载电阻器并且通过限制硅材料的掺杂密度与光电二极管的面积保持光电二极管的电容较小,整个电子设备结构的负载电阻(R)和电容(C)的RC时间常量可以被保持为小于该通过时间值。例如,以1015/cm3的密度掺杂的光电二极管可以在没有施加任何偏压的情况下具有10nF/cm2的电容。具有50ohm(欧姆)负载电阻器的小面积光电二极管可以具有非常快的RC时间常量。面积为0.01cm2的光电二极管可以具有0.5纳秒的RC时间常量。假设响应时间将由穿过光电二极管的最大电荷载流子通过时间限制,则扩散速率可以为不同厚度的光电二极管的响应时间设置上限。例如,如果光电二极管具有小于d=100μm的厚度,则可以由以下等式(II)计算扩散通过时间,其中D是电子的扩散系数。
响应时间由2μs的上限约束。对于具有大约900nm的波长的光,只有大约35%的光在首次通过时被吸收或被吸收到比100μm更薄的设备中,并且大约30%的光在第一表面处被反射,因而给出在10%的量级或0.1A/W的灵敏度。通过利用多次内反射实现数值R=0.5A/W可以使灵敏度R至少增加四倍。
在一个方面,光电二极管可以具有小于大约d=10μm的厚度。利用以上的等式(I),最终得到的响应时间上限是大约20ns。对于波长为大约700nm、首次通过被吸收大约33%并且在第一表面处被反射大约30%的光,灵敏度可以在10%的量级或0.3安培/瓦特。通过利用本文中所述的多次内反射实现数值R=0.6A/W可以使灵敏度R至少增加一倍。
在一个方面,例如,光电子设备具有从大约100皮秒到大约1纳秒的响应时间。在另一方面,相对于标准硅,对于从大约800nm到大约1200nm的至少一个波长,光电子设备具有从大约0.4A/W到大约0.55A/W的灵敏度。在又一方面,相对于标准硅,对于从大约1000nm到大约1200nm的至少一个波长,光电子设备具有从大约0.1A/W到大约0.55A/W的灵敏度。在另一方面,相对于具有可比较的厚度和响应时间的硅设备,对于从大约550nm到大约1200nm的至少一个波长,光电子设备的外部量子效率提高了至少10%。在另一方面,光电子设备具有的数据速率大于或等于大约1Gbs。在进一步的方面,光电子设备具有的数据速率大于或等于大约2Gbs。
如前所述,根据本发明的某些方面的光电子设备可以显示出与传统设备相比更低的暗电流。尽管可能存在多种原因,但是一个示例性的原因可能是更薄的硅材料层可以具有更少的负责生成暗电流的晶体缺陷。在一个方面,例如,光电子设备在工作期间的暗电流是从大约100pA/cm2到10nA/cm2。在另一个方面,光电子设备在工作期间的最大暗电流小于大约1nA/cm2。
不同类型的硅材料是可预期的,并且认为可以包含到光电子设备中的任何材料均在本发明的范围内。在一个方面,例如,硅材料是单晶体。在另一方面,硅材料是多晶体。在又一方面,硅材料是微晶体。
本发明的硅材料也可以利用多种制造工艺来制作。在某些情况下,制造步骤可能影响设备的效率,并且可以在实现预期结果时考虑在内。示例性的制造工艺可以包括直拉(Cz)工艺、磁场直拉(mCz)工艺、浮区(FZ)工艺、外延生长或沉积工艺等。在一个方面,硅材料是外延生长的。
如前所述,纹理区可以起到扩散电磁辐射、重定向电磁辐射以及吸收电磁辐射的作用,因而增加设备的QE。纹理区可以包括用于增加硅材料的有效吸收长度的表面特征。所述表面特征可以是圆锥体、角锥体、柱状、凸起物、显微镜头、量子点、反转特征等。诸如操纵特征尺寸、维数、材料类型、掺杂剂分布图、纹理位置等的因素可以允许扩散区针对特定的波长是可调节的。在一个方面,调节设备可以允许吸收特定波长或波长范围。在另一个方面,调节设备可以允许通过滤波来减少或消除特定波长或波长范围。
如前所述,根据本发明的某些方面的纹理区可以允许硅材料经历入射电磁辐射在设备内多次穿过,特别是在更长波长(即红外光)下。这种内反射使得有效吸收长度增加至大于半导体衬底的厚度。吸收长度的这种增加将增加设备的量子效率,从而导致改进的信噪比。纹理区可以与最接近射入的电磁辐射的表面相关联,或者纹理区可以与射入的电磁辐射相反的表面相关联,因而允许电磁辐射在达到纹理区之前穿过硅材料。此外,纹理区可以被掺杂。在一个方面,纹理区可以被掺杂到与硅衬底相同或相似的极性,以便在设备背面上提供掺杂的接触区。
纹理区可以通过各种技术形成,包括激光法、化学蚀刻(例如,各向异性蚀刻、各向同性蚀刻)、纳米压印光刻、额外材料沉积、反应离子蚀刻等。产生纹理区的一种有效方法是通过激光加工。该激光加工允许为半导体衬底的离散位置提供纹理结构。形成纹理区的多种激光加工技术是可预期的,并且能够形成该区的任何技术都应被视为在本发明的范围内。除此以外,激光处理或激光加工可以允许增强吸收性能,并因此提高电磁辐射聚焦和检测。
在一个方面,例如,可以利用激光辐射来照射硅材料的目标区,从而形成纹理区。这种加工的示例已经在美国专利7,057,256、7,354,792和7,442,629中更详细地描述,其整体内容以参考方式合并到本申请中。简言之,利用激光辐射来照射硅材料的表面,从而形成纹理区或表面改性区。激光加工可以在具有或不具有掺杂剂材料的情况下发生。在使用掺杂剂的那些方面,激光可以被引导穿过掺杂剂载体并且到达硅表面上。以此方式,来自掺杂剂载体的掺杂剂被引入硅材料的目标区。根据本发明的某些方面,加入硅材料的该区可以具有各种优势。例如,目标区通常具有通过本文描述的机制增加激光处理区的表面积和提高辐射吸收的可能性的纹理表面。在一个方面,该目标区是包括已经由激光纹理化生成的微米尺寸和/或纳米尺寸的表面特征的充分纹理化表面。在另一方面,照射硅材料的表面包括使激光辐射暴露于掺杂剂,使得辐射将掺杂剂加入半导体中。各种掺杂剂材料在本领域中是已知的,并且在此被更详细地讨论。还应理解的是,在某些方面,此类激光加工可以在不充分掺杂硅材料的环境中(例如,氩气气氛)发生。
因此,通过激光处理在化学上和/或结构上改变形成纹理区的硅材料的表面,其在某些方面可以导致形成表现为纳米结构、微米结构和/或表面的图案化区域的表面特征,以及如果使用掺杂剂,则将这些掺杂剂加入到半导体材料中。在某些方面,这些特征的尺寸可以是大约50nm到20um,并且可以有助于吸收电磁辐射。换句话说,纹理表面可以提高入射的辐射被硅材料吸收的可能性。
用于对硅材料进行表面改性的激光辐射的类型可以取决于材料和预期改性。本领域中已知的任何激光辐射都可以用于本发明的设备和方法。然而,存在许多可能影响表面改性过程和/或最终产品的激光特性,其包括但不限于激光辐射的波长、脉冲宽度、脉冲能流、脉冲频率、极性、激光相对于硅材料的传播方向等。在一个方面,激光器可以被配置为提供硅材料的脉动激射。短波脉冲激光器能够生成飞秒、皮秒和/或纳秒脉冲持续时间。激光脉冲可以具有在大约从大约10nm到大约12μm的范围内的中心波长,更具体地,从大约200nm到大约1600nm的范围内的中心波长。激光辐射的脉冲宽度可以在从大约几十飞秒到大约几百纳秒的范围内。在一个方面,脉冲宽度可以在从大约50飞秒到大约50皮秒的范围内。在另一方面,激光脉冲宽度可以在从大约50皮秒到100纳秒的范围内。在另一方面,激光脉冲宽度在从大约50飞秒到500飞秒的范围内。
照射目标区的激光脉冲的数量可以在从大约1到大约5000的范围内。在一个方面,照射目标区的激光脉冲的数量可以是从大约2到大约1000。进一步,脉冲的重复率或频率可以被选择为在从大约10Hz到大约10MHz的范围内,或者在从大约1Hz到大约1MHz的范围内,或者在从大约10Hz到大约10kHz的范围内。而且,每个激光脉冲的能流可以在从大约1kJ/m2到大约20kJ/m2的范围内,或者在从大约3kJ/m2到大约8kJ/m2的范围内。
各种掺杂剂是可预期的,并且可以用于对光电子设备的第一掺杂区、第二掺杂区、纹理区或任何其他掺杂区进行掺杂的任何材料都被视为在本发明的范围内。应当注意,所使用的特定掺杂剂可以根据激光处理的硅材料和最终硅材料的预期用途而改变。
掺杂剂可以是电子施主或空穴施主。在一个方面,掺杂剂的非限制性示例包括S、F、B、P、N、As、Se、Te、Ge、Ar、Ga、In、Sb及其组合。应当注意,掺杂剂的范围不仅包括掺杂剂本身,而且包括表现为传送此类掺杂剂的材料(即掺杂剂载体)。例如,S掺杂剂不仅包括S,而且包括能够用于将S掺杂到目标区内的任何材料,例如H2S、SF6、SO2等,包括其组合物。在一个特定的方面,掺杂剂可以是S。硫能够以在大约5×1014和大约1×1016个离子/cm2之间的离子剂量水平出现。含氟复合物的非限制性示例可以包括ClF3、PF5、F2SF6、BF3、GeF4、WF6、SiF4、HF、CF4、CHF3、CH2F2、CH3F、C2F6、C2HF5、C3F8、C4F8、NF3等,包括其组合物。含硼复合物的非限制性示例可以包括B(CH3)3、BF3、BCl3、BN、C2B10H12、硼硅酸盐、B2H6等,包括其组合物。含磷复合物的非限制性示例可以包括PF5、PH3等,包括其组合物。含氯复合物的非限制性示例可以包括Cl2、SiH2Cl2、HCl、SiCl4等,包括其组合物。掺杂剂还可以包括含砷复合物如AsH3等以及含锑复合物。此外,掺杂剂材料可以包括掺杂剂组的混合物或组合物,例如含硫复合物与含氯复合物混合起来。在一个方面,掺杂剂材料可以具有大于空气密度的密度。在一个具体方面,掺杂剂材料可以包括Se、H2S、SF6或其混合物。在另一个具体方面,掺杂剂可以是SF6,并且可以具有大约5.0×10-8mol/cm3到大约5.0×10-4mol/cm3的预定浓度范围。SF6气体是用于通过激光工艺将硫加入半导体材料的良好载体,而不会对硅材料产生显著的不利影响。此外,应当注意的是,掺杂剂还可以是n-型或p-型掺杂剂材料溶解在诸如水、酒精或酸性或碱性溶液等溶液中的液态溶液。掺杂剂还可以是作为粉末或作为干结到晶片上的悬浮物应用的固态材料。
因此,可以利用电子施主种类或空穴施主种类掺杂第一掺杂区和第二掺杂区,以促使这些区互相比较和/或与硅衬底相比变得极性更正或更负。在一个方面,例如,任一掺杂区均可以被p-掺杂。在另一方面,任一掺杂区均可以被n-掺杂。在一个方面,例如,通过用p+掺杂剂和n-掺杂剂进行掺杂可以使得第一掺杂区的极性为负且第二掺杂区的极性为正。在某些方面,可以使用这些区的n(--)、n(-)、n(+)、n(++)、p(--)、p(+)或p(++)类型掺杂的变体。此外,在某些方面,除了第一掺杂区和第二掺杂区之外还可以对硅材料进行掺杂。可以将硅材料掺杂为具有与第一掺杂区和第二掺杂区中的一个或多个不同的掺杂极性,或者可以将硅材料掺杂为具有与第一掺杂区和第二掺杂区中的一个或多个相同的掺杂极性。在一个特定方面,硅材料可以被掺杂为p-型的,而第一掺杂区和第二掺杂区中的一个或多个可以是n-型的。在另一个特定方面,硅材料可以被掺杂为n-型的,而第一掺杂区和第二掺杂区中的一个或多个可以是p-型的。在一个方面,第一掺杂区或第二掺杂区中的至少一个具有从大约0.1μm2到大约32μm2的表面积。
在另一个方面,可以利用掺杂剂掺杂纹理区和/或硅材料的至少一部分,从而生成背面场。背面场可以起到排斥来自设备背侧并朝向结生成的电荷载流子的作用,从而提高采集效率和速度。增加背面场可以提高电荷载流子采集和消耗。背面场的存在还起到抑制来自设备表面的暗电流贡献的作用。
在另一个方面,如图3所示,光电子设备可以包括具有第一掺杂区34和与其相关联的第二掺杂区36的硅材料32,其中第一掺杂区和第二掺杂区形成半导体光电二极管结。纹理区38与硅材料耦合并且被定位成与电磁辐射相互作用。光电子设备还可以包括用于提供电接触至设备的一侧的第一接触端37和用于提供电接触至设备的另一侧的第二接触端39。在一个方面,第一接触端和第二接触端的电压极性彼此相反。应当注意的是,在某些方面,第一接触端和第二接触端可以在设备的相同侧面上(未示出)。此外,支撑衬底35可以耦合到设备,从而为其提供结构稳定性。在一个方面,接触端之一可以是纹理区的掺杂部分。可以掺杂一部分纹理区或整个纹理区,从而产生接触端之一。
尽管根据本发明的某些方面的光电子设备可以在无偏压的情况下以高速工作,但是在一个方面,反向偏压被施加在第一接触端和第二接触端之间。这一反向偏压可以起到通过更快速地扫描来自硅材料的电荷载流子而降低设备的响应时间的作用。因此,对于使用偏压的这些情况来说,能够扫描来自硅材料的电荷载流子的任何偏置电压被视为在本发明的范围内。在一个方面,例如,反向偏压在大约0.001V到大约20V的范围内。在另一个方面,反向偏压在大约0.001V到大约10V的范围内。在又一个方面,反向偏压在大约0.001V到大约5V的范围内。在进一步的方面,反向偏压在大约0.001V到大约3V的范围内。在更进一步的方面,反向偏压在大约3V到大约5V的范围内。在某些方面,可以没有反向偏压,或换句话说,在第一接触端和第二接触端之间施加0V电压。在这些情况下,可以通过由第一掺杂区和第二掺杂区产生的结电势耗尽来自硅材料的电荷载流子。
在某些方面,第一掺杂区和第二掺杂区可以在硅材料的相反侧上。例如,如图4所示,硅材料42可以包括与硅材料的一个表面相关联的第一掺杂区44和与硅材料的相反侧面相关联的第二掺杂区46。而且,纹理区可以与任一掺杂区相关联。例如,如图5所示,硅材料52可以包括与硅材料的一个表面相关联的第一掺杂区54和与硅材料的相反侧面相关联的第二掺杂区56,其中纹理区58与第一掺杂区相关联。在另一方面,纹理区与第二掺杂区相关联(未示出)。在进一步的方面,纹理区可以与每个掺杂区相关联(未示出)。
在另一方面,如图6所示,硅材料62可以具有在一个表面上的第一掺杂区64和第二掺杂区66以及在相反表面上的纹理区68。在该情况下,电磁辐射69入射到具有纹理表面的硅材料的侧面上。在另一方面,如图7所示,硅材料72可以在与纹理区78相反的表面上具有第一掺杂区74和第二掺杂区76。抗反射层77可以在与纹理层相反的表面上耦合到硅材料。在某些方面,抗反射层可以位于与纹理区相同的硅材料的侧面上(未示出)。而且,在某些方面,透镜可以光学耦合到硅材料,并且被定位成使入射的电磁辐射聚集到硅材料中。
在本发明的另一方面,提供一种光电二极管阵列。该阵列可以包括:具有入射光表面的硅材料;在硅材料中的至少两个光电二极管,其中每个光电二极管包括形成结的第一掺杂区和第二掺杂区;以及耦合到硅材料并被定位成与电磁辐射相互作用的纹理区。纹理区可以是单个纹理区或多个纹理区。此外,对于具有从大约800nm到大约1200nm的至少一个波长的电磁辐射,该光电二极管阵列具有从大约1皮秒到大约5纳秒的响应时间和大于或等于大约0.4A/W的灵敏度。
例如,如图8所示,硅材料88可以包括至少两个光电二极管83,每个光电二极管都具有第一掺杂区84和第二掺杂区86。纹理区88被定位成与电磁辐射相互作用。图8示出了每个光电二极管的单独纹理区。在某些方面,单个纹理区可以用于增加阵列中多个光电二极管的吸收路径长度。而且,隔离结构57可以被定位在光电二极管之间,从而电气地和/或光学地隔离光电二极管。在另一方面,光电二极管阵列可以电子耦合到电子电路以处理由每个光电二极管生成的信号。
各种类型的隔离结构都是可预期的,并且任何此类隔离结构都应视为在本发明的范围内。隔离结构可以是浅槽隔离或深槽隔离。而且,隔离结构可以包括在传统的浅隔离和深隔离之间的深度,具体取决于设备的设计。隔离结构可以包括介电材料、反射材料、导电材料及其组合,包括纹理区和其他光扩散特征。因此,隔离结构可以被配置为反射入射的电磁辐射,在某些情况下直到电磁辐射被吸收,因而增加设备的有效吸收长度。
光电二极管阵列可以具有多种用途。例如,在一个方面,该阵列可以是成像器。可以预期多种类型的成像器,并且任何此类成像器或成像应用都被视为在本发明的范围内。非限制性示例包括三维成像、机器视觉、夜视、安全和监视、各种商业应用、激光测距和标记等。因此,在例如三维成像的情况下,该阵列可操作以便检测反射的光学信号和发射的光学信号之间的相位延迟。
举一个实例来说,各种应用可以得益于深度信息,例如免手持姿态控制、视频游戏、医疗应用、机器视觉等。渡越时间(TOF)是被开发用于雷达和LIDAR(光探测和测距)系统以提供深度信息的技术。TOF的基本原理涉及发送信号并测量来自目标的返回信号的特性。所测量的特性被用于确定TOF。因此,通过使得TOF的一半与信号速度相乘获得到目标的距离。
图9示出了具有多个空间分离的表面的目标的飞行时间测量。等式(III)可以用于测量到目标的距离,其中d是到目标的距离并且c是光的速度。
通过测量光从光源92发射、传播到目标94并从其返回所需的时间(例如,TOF),可以推导出光源(例如,发光二极管(LED))与目标表面之间的距离。对于成像器而言,如果每个像素都可以执行上述TOF测量,则可以实现目标的三维成像。当目标相对接近光源时,由于光速较大,利用TOF方法进行距离测量变得困难。因此,在一个方面,TOF测量可以利用调制的LED光脉冲,并且测量发射光与接收光之间的相位延迟。基于相位延迟和LED脉冲宽度,可以推导出TOF。
TOF概念已经被用于CMOS和CCD传感器以获得来自每个像素的深度信息。在许多传统的三维TOF传感器中,红外光LED或激光器发射经调制的光脉冲来照亮目标。测量的发射光和接收光之间的相位偏移可以用于推导出深度信息。然而,这些方法可能具有各种棘手的问题。例如,如果两个目标之间的TOF之差等于光源调制频率的半周期,则出现模糊(例如,混淆现象)。为了解决模糊问题,通常使用的方法是利用多个调制频率测量相同的场景。此外,由于使用近红外光LED或激光器,所以通过相同的三维TOF传感器一般无法实现良好的彩色图像,因为不能使用红外(IR)截止滤波器。另外,许多当前的三维TOF传感器以滚动快门模式工作。在滚动快门模式中,通过垂直地或水平地扫描越过一个帧来捕获图像。已知运动伪像伴随使用滚动快门模式的摄像机并且可能严重地降低深度图的质量。当环境光在信号输出中生成不期望的偏移时出现另一个问题。涉及信号偏移的光子快射噪声将降低涉及经调制的近红外(NIR)发光二极管(LED)的有用信号的信噪比(SNR)。因此,许多当前的三维TOF成像器不能在户外工作(例如,明亮的环境光)。除了环境光之外,任何暗电流也将促成不期望的偏移,其与正常可见像素相同。
作为一个示例,具有增强的红外响应的三维像素如TOF三维像素可以提高深度准确性。在一个方面,光成像器阵列可以包括彼此单片/单独地布置的至少一个三维红外光检测像素和至少一个可见光检测像素。图10a-c示出此类阵列的像素布置的非限制性示例配置。
图10a示出了具有红色像素102、蓝色像素104和绿色像素106的像素阵列布置的一个示例。此外,还包括在光谱的红外区具有增强的灵敏度或可检测能力的两个三维TOF像素(108和109)。两个三维像素的组合允许更好的深度感知。在图10b中,所示的像素布置包括图10a中所描述的成像器,以及红色像素、蓝色像素和两个绿色像素的三个阵列。本质上,一个TOF像素(108和109)替换RGGB像素设计的四分之一。在该配置中,增加一些绿色像素允许捕获更多人眼所需的绿色灵敏度所需的绿色波长,与此同时捕获用于深度感知的红外光。应当注意,本发明的范围不应被像素阵列的数量或布置方式所限制,并且任何数量和/或布置方式都包括在本发明的范围内。图10c示出了根据另一方面的像素的另一种布置。
可以预期各种成像器配置和部件,并且任何此类成像器配置和部件都应视为在本发明的范围内。这些部件的非限制性示例可以包括载体晶片、抗反射层、电介质层、电路层、通孔(via)、传输门、红外滤波器、颜色滤波器阵列(CFA)、红外截止滤波器、隔离特征等。此外,这些设备可以具有光吸收特性和元件,其在2010年9月17日提交的美国专利申请号12/885,158中已经公开,该申请的整体内容以参考方式合并于此。
如前所述,TOF像素可以具有关于像素(on-pixel)的光学窄带带通滤波器。窄带带通滤波器设计可以匹配经调制的光源(LED或激光器)发射光谱,并且可以显著降低不期望的环境光,这可能进一步提高经调制的红外光的信噪比。提高红外QE的另一个益处是用于高速三维图像捕获的高帧速操作的可能性。集成的红外截止滤波器可以允许具有高保真颜色渲染的高质量可见图像。将红外截止滤波器集成到传感器芯片上还可以降低摄像机模块的总系统成本(由于去除了典型的IR滤光镜)并精简模块轮廓(对移动应用有好处)。
由于速度和检测被提高,QE增强的成像器的厚度和灵敏度可能对TOF像素操作产生显著影响。增大的QE将促使图像信噪比更高,这将大大降低深度误差。此外,厚度小于大约100μm的硅材料的增大的QE可以允许像素降低信号的扩散分量,从而可以提高电荷采集和转移速度,这对TOF像素操作是有好处的。一般地,在像素内产生的光生载流子将取决于两种采集机制:漂移和扩散。对于波长较短的光,大多数电荷载流子将在设备的浅区和二极管的耗尽区内生成。这些载流子可以通过漂移相对快速地采集。对于红外光,大多数光生载流子在硅材料内的更深处生成。为了实现更高的QE,一般使用较厚的硅层。因此,大多数电荷载流子将在二极管的耗尽区外生成,并且将依赖于扩散进行采集。然而,对于三维TOF像素,光生载流子的快速采样是有利的。
对于根据本发明的某些方面的设备,在硅材料的薄(即,小于100μm)层内可以实现高QE。因此,可以通过漂移机制采集生成的基本所有载流子。这允许快速电荷采集和转移。
图11示出了根据本发明的一个方面的允许全局快门操作的六晶体管(6-T)结构的示例性示意图。该像素可以包括光电二极管(PD)、全局复位(Global_RST)、全局传输门(Global_TX)、存储节点、传输门(TX1)、复位(RST)、源跟踪器(SF)、浮动扩散(FD)、行选择晶体管(RS)、电源(Vaapix)和电压输出(Vout)。由于使用额外的传输门和存储节点,因此允许相关双采样(CDS)。因此,读噪声应当能够匹配典型的CMOS 4T像素。
图12示出了根据本发明的一个方面的三维TOF像素的示例性示意图。该三维TOF像素可以具有11个晶体管以便完成目标的深度测量。在该实施例中,三维像素可以包含光电二极管(PD)、全局复位(Global_RST)、第一全局传输门(Global_TX1)、第一存储节点、第一传输门(TX1)、第一复位(RST1)、第一源跟踪器(SF1)、第一浮动扩散(FD1)、第一行选择晶体管(RS1)、第二全局传输门(Global_TX2)、第二存储节点、第二传输门(TX2)、第二复位(RST2)、第二源跟踪器(SF2)、第二浮动扩散(FD2)、第二行选择晶体管(RS2)、电源(Vaapix)和电压输出(Vout)。其他晶体管可以包括在该三维结构中,并且应当视为在本发明的范围内。具有11个晶体管的特定实施例可以由于全局快门操作而减少运动伪像,因而提供更准确的测量。
如前所述,光电二极管阵列可以用于各种通信应用。例如,该阵列可以用于检测脉冲光信号。这些脉冲光信号可以用于高速传输数据。通过利用具有快速响应时间的光电二极管,可以检测非常短的脉冲宽度,因而提高数据通信的速度。在一个方面,例如,脉冲光信号可以具有从大约1飞秒到大约1微秒的脉冲宽度。在另一方面,至少两个光电二极管可操作以便以至少1Gbps的速度发射数据。在另一方面,至少两个光电二极管可操作以便以至少2Gbps的速度发射数据。
在一个方面,提供一种形成方形光电二极管阵列(方形阵列)的四光电二极管阵列。方形阵列可以用于多种应用,包括通信、激光测距、激光准直等。在某些方面,四个光电二极管可以具有一致的光响应,或换句话说,四个光电二极管对于相同的波长范围是选择性的。也可能有益的是,方形阵列中的光电二极管之间只有很少或没有电串扰和/或光学串扰。为此,有利的是,隔离结构可以布置在光电二极管之间。一些应用也可以得益于根据本发明的某些方面的光电二极管的高速工作。图13和图4示出了方形阵列的示例性配置。图13示出了包括硅材料132和掺杂区134的四个光电二极管130的方形阵列。掺杂区是由形成结的多个掺杂区组成的。隔离结构136位于光电二极管之间,从而电气和/或光学隔离光电二极管以免不期望的串扰。图14示出圆形配置中的相似布置。该阵列包括四个光电二极管140,其中每个光电二极管140包括硅材料142、掺杂区144和隔离结构146。除了本文中讨论的这些材料之外,隔离结构可以包括用于电隔离的电介质材料和对入射到沟槽壁上的光具有高反射率的金属材料。在一个方面,可以比硅材料更重地掺杂隔离区之间的二极管的侧面和表面,从而约束在带边沿处的费米能级(Fermi level)并减少暗电流。光电二极管还可以包括与硅材料相反的导电类型的掩埋层。在某些方面,硅材料的掺杂可以保持为较低并且厚度可以变薄,从而提供对光信号更快的响应时间。纹理区可以起到向后散射穿过硅材料的光的作用,因而提高近红外灵敏度。
在另一个方面,提供一种提高光电子设备的速度的方法。如图15所示,该方法可以包括对硅材料中的至少两个区进行掺杂以形成至少一个结152,以及使得硅材料具有纹理结构,从而形成定位成与电磁辐射154相互作用的纹理区。对于具有从大约800nm到大约1200nm的至少一个波长的电磁辐射,该光电子设备具有从大约1皮秒到大约5纳秒的响应时间和大于或等于大约0.4A/W的灵敏度。
当然,理解的是,以上所述的布置仅仅是为了说明本发明的原理的应用。在不偏离本发明的精神和保护范围的情况下,本领域技术人员可以设想许多修改和变化布置,并且希望随附的权利要求涵盖这些修改和变化。因此,虽然以上结合目前被认为是本发明的最实际和最优选的实施例特别详细地描述了本发明,但是本领域普通技术人员将理解,在不偏离本文中阐述的原理和概念的情况下,可以做出许多改进,包括但不限于尺寸变化、材料变化、形状变化、形态变化、功能和操作方式变化、装配及用途变化。
Claims (10)
1.一种高速光电子设备,其包含:
具有入射光表面的硅材料;
在所述硅材料中形成半导体结的第一掺杂区和第二掺杂区;以及
耦合到所述硅材料并定位成与电磁辐射相互作用的纹理区;
其中对于具有从大约800nm到大约1200nm的至少一个波长的电磁辐射,所述光电子设备具有从大约1皮秒到大约5纳秒的响应时间和大于或等于大约0.4A/W的灵敏度。
2.根据权利要求1所述的设备,其中所述硅材料具有从大约1μm到大约100μm的厚度。
3.根据权利要求1所述的设备,其中对于具有从大约800nm到大约1200nm的至少一个波长的电磁辐射,所述光电子设备具有大于或等于大约0.5A/W的灵敏度。
4.根据权利要求1所述的设备,其中对于具有大约850nm的波长的电磁辐射,所述光电子设备具有大于或等于大约0.45A/W的灵敏度。
5.根据权利要求1所述的设备,其中所述光电子设备具有从大约1皮秒到大约1纳秒的响应时间。
6.根据权利要求1所述的设备,其中所述第一掺杂区具有从大约0.1μm2到大约32μm2的表面积。
7.根据权利要求1所述的设备,其中所述光电子设备具有大于或等于大约1Gbs的数据速率。
8.根据权利要求1所述的设备,其进一步包含第一接触端和第二接触端,其中所述第一接触端的电压极性与所述第二接触端的电压极性相反。
9.根据权利要求8所述的设备,其中反向偏压被施加在所述第一接触端和所述第二接触端之间。
10.根据权利要求9所述的设备,其中所述反向偏压是从大约0.001V到大约20V。
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CN103081128B (zh) | 2016-11-02 |
CN103081128A (zh) | 2013-05-01 |
US20170345951A1 (en) | 2017-11-30 |
EP2583312A2 (en) | 2013-04-24 |
US9761739B2 (en) | 2017-09-12 |
US20220052210A1 (en) | 2022-02-17 |
CN106449684B (zh) | 2019-09-27 |
US20200111922A1 (en) | 2020-04-09 |
US10505054B2 (en) | 2019-12-10 |
US20120146172A1 (en) | 2012-06-14 |
WO2011160130A2 (en) | 2011-12-22 |
WO2011160130A3 (en) | 2012-04-05 |
US20150349150A1 (en) | 2015-12-03 |
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