JP3729826B2 - 固体撮像装置の製造方法 - Google Patents
固体撮像装置の製造方法 Download PDFInfo
- Publication number
- JP3729826B2 JP3729826B2 JP2004004538A JP2004004538A JP3729826B2 JP 3729826 B2 JP3729826 B2 JP 3729826B2 JP 2004004538 A JP2004004538 A JP 2004004538A JP 2004004538 A JP2004004538 A JP 2004004538A JP 3729826 B2 JP3729826 B2 JP 3729826B2
- Authority
- JP
- Japan
- Prior art keywords
- imaging device
- state imaging
- region
- solid
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 48
- 238000003384 imaging method Methods 0.000 title claims description 39
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 239000000758 substrate Substances 0.000 claims description 21
- 238000000137 annealing Methods 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 14
- 230000004913 activation Effects 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 238000002955 isolation Methods 0.000 claims description 11
- 230000003321 amplification Effects 0.000 claims description 9
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 9
- 238000002513 implantation Methods 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 4
- 229910021332 silicide Inorganic materials 0.000 description 23
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 229910052710 silicon Inorganic materials 0.000 description 17
- 239000010703 silicon Substances 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 230000007547 defect Effects 0.000 description 14
- 239000010410 layer Substances 0.000 description 12
- 238000005468 ion implantation Methods 0.000 description 11
- 238000003860 storage Methods 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 238000009825 accumulation Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 238000005280 amorphization Methods 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- -1 it may be Co Inorganic materials 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
実施の形態1における製造方法は、0.25μm以下の微細CMOSロジックテクノロジーを用い、素子分離にSTIを用い、ゲート酸化膜は10nm以下で作製する場合に好適である。本実施の形態は、活性化アニールにRTAを用いない点に特徴がある。本実施の形態における固体撮像装置の製造方法について、図1A〜1Fの工程を示す断面図を参照して説明する。
実施の形態2における固体撮像装置の製造方法は、すべてのトランジスタがnチャネルトランジスタで構成されている固体撮像装置(例えば特開2002−270808号公報参照)の製造工程に、実施の形態1の工程を適用することに特徴がある。以下、図2A〜2Fの製造工程断面図を参照して本実施の形態について説明するが、実施の形態1と同様の工程については説明を簡略化し、異なる工程についてのみ詳細に説明する。
2 転送トランジスタ
3 リセットトランジスタ
4 増幅トランジスタ
5 垂直選択トランジスタ
6 画素
7 画素領域
8 画素部電源への接続部
9 垂直選択手段
10 負荷トランジスタ群
11 行信号蓄積手段
12 水平選択手段
13 垂直選択トランジスタ制御線
14 リセットトランジスタ制御線
15 転送トランジスタ制御線
16 垂直信号線
20 シリコン基板
21 素子分離部
22 ゲート絶縁膜
23a 読み出しゲート電極
23b リセット又はアドレスゲート電極
23c ゲート電極
24a N型ドレイン領域
24b P型LDD領域
24c N型LDD領域
25 N型信号蓄積領域
26 Nウェル
27 Pウェル
28 シリコン窒化膜
29 シリコン酸化膜
30 光レジスト膜
31 シリサイドブロック層
32 ゲート側壁絶縁膜
33 表面シールド領域
34a、34b ソース・ドレイン領域
35 Tiシリサイド膜
36 層間絶縁膜
37 Al配線
Claims (5)
- 半導体基板上に、入射光を光電変換し蓄積する複数のフォトダイオードと前記フォトダイオードの信号電荷を読み出す読み出し手段とを含む画素セルを2次元状に配列した感光領域を形成するとともに、前記感光領域の複数の画素セルを行方向に駆動する垂直駆動回路および列方向に駆動する水平駆動回路と、出力信号を増幅する増幅回路とを、MOSトランジスタにより形成する固体撮像素子の製造方法において、
前記フォトダイオードおよび複数のMOSトランジスタの各素子間の素子分離領域をSTI(Shallow Trench Isolation)により形成する工程と、前記MOSトランジスタのゲート酸化膜を10nm以下の厚さで形成する工程とを備え、
前記MOSトランジスタのゲート形成工程以後に行う、前記半導体基板に注入されたイオンの活性化熱処理工程を、ファーネスを用いて、900℃を超えない温度範囲で施すことを特徴とする固体撮像素子の製造方法。 - 前記ファーネスを用いる活性化熱処理工程を、少なくともフォトダイオード形成注入、ソースドレイン注入、および基板コンタクト注入後に1回備える請求項1記載の固体撮像装置の製造方法。
- 前記ファーネスを用いる活性化熱処理工程を、850℃以上900℃以下かつ、60分以内で施す請求項1または2に記載の固体撮像装置の製造方法。
- 前記MOSトランジスタのゲート形成工程以後の熱処理工程は、900℃を超えない温度で15分以上のアニール工程を含む請求項1または2記載の固体撮像素子の製造方法。
- 前記複数のMOSトランジスタをN型トランジスタのみで構成する請求項4記載の固体撮像装置の製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004004538A JP3729826B2 (ja) | 2004-01-09 | 2004-01-09 | 固体撮像装置の製造方法 |
KR1020040115125A KR100661331B1 (ko) | 2004-01-09 | 2004-12-29 | 고체 촬상 장치의 제조 방법 |
TW093141288A TW200527602A (en) | 2004-01-09 | 2004-12-30 | Method for producing solid-state imaging device |
US11/029,842 US7285482B2 (en) | 2004-01-09 | 2005-01-05 | Method for producing solid-state imaging device |
EP05000337A EP1553632A3 (en) | 2004-01-09 | 2005-01-10 | Method for producing solid-state imaging device |
CNB2005100039036A CN100454564C (zh) | 2004-01-09 | 2005-01-10 | 用于制造固态成像装置的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004004538A JP3729826B2 (ja) | 2004-01-09 | 2004-01-09 | 固体撮像装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005197605A JP2005197605A (ja) | 2005-07-21 |
JP3729826B2 true JP3729826B2 (ja) | 2005-12-21 |
Family
ID=34587729
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004004538A Expired - Fee Related JP3729826B2 (ja) | 2004-01-09 | 2004-01-09 | 固体撮像装置の製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7285482B2 (ja) |
EP (1) | EP1553632A3 (ja) |
JP (1) | JP3729826B2 (ja) |
KR (1) | KR100661331B1 (ja) |
CN (1) | CN100454564C (ja) |
TW (1) | TW200527602A (ja) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7057256B2 (en) | 2001-05-25 | 2006-06-06 | President & Fellows Of Harvard College | Silicon-based visible and near-infrared optoelectric devices |
US7442629B2 (en) | 2004-09-24 | 2008-10-28 | President & Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
JP4843951B2 (ja) * | 2005-01-27 | 2011-12-21 | ソニー株式会社 | 固体撮像装置の製造方法、固体撮像装置およびカメラ |
KR100698100B1 (ko) * | 2005-09-21 | 2007-03-23 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
KR20070033718A (ko) * | 2005-09-22 | 2007-03-27 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
JP2007142035A (ja) * | 2005-11-16 | 2007-06-07 | Matsushita Electric Ind Co Ltd | 固体撮像装置及びその製造方法 |
US20070196988A1 (en) * | 2006-02-23 | 2007-08-23 | Shroff Mehul D | Poly pre-doping anneals for improved gate profiles |
JP5116264B2 (ja) * | 2006-07-10 | 2013-01-09 | キヤノン株式会社 | 光電変換装置、光電変換装置の製造方法および光電変換装置を用いた撮像システム |
JP5110820B2 (ja) | 2006-08-02 | 2012-12-26 | キヤノン株式会社 | 光電変換装置、光電変換装置の製造方法及び撮像システム |
US7732844B2 (en) | 2006-11-03 | 2010-06-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Crosstalk improvement through P on N structure for image sensor |
KR100859481B1 (ko) * | 2006-12-29 | 2008-09-23 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
US7679083B2 (en) | 2007-03-30 | 2010-03-16 | Samsung Electronics Co., Ltd. | Semiconductor integrated test structures for electron beam inspection of semiconductor wafers |
JP2009065118A (ja) * | 2007-08-09 | 2009-03-26 | Panasonic Corp | 固体撮像装置 |
KR20090022512A (ko) * | 2007-08-30 | 2009-03-04 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법 |
JP5347283B2 (ja) | 2008-03-05 | 2013-11-20 | ソニー株式会社 | 固体撮像装置およびその製造方法 |
JP4793402B2 (ja) * | 2008-04-21 | 2011-10-12 | ソニー株式会社 | 固体撮像装置とその製造方法、及び電子機器 |
JP4759590B2 (ja) * | 2008-05-09 | 2011-08-31 | キヤノン株式会社 | 光電変換装置及びそれを用いた撮像システム |
JP5365221B2 (ja) * | 2009-01-29 | 2013-12-11 | ソニー株式会社 | 固体撮像装置、その製造方法および撮像装置 |
US9911781B2 (en) | 2009-09-17 | 2018-03-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
CN102630341A (zh) | 2009-09-17 | 2012-08-08 | 西奥尼克斯股份有限公司 | 光敏成像器件和相关方法 |
US9673243B2 (en) | 2009-09-17 | 2017-06-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
US8476681B2 (en) * | 2009-09-17 | 2013-07-02 | Sionyx, Inc. | Photosensitive imaging devices and associated methods |
US8692198B2 (en) | 2010-04-21 | 2014-04-08 | Sionyx, Inc. | Photosensitive imaging devices and associated methods |
CN103081128B (zh) | 2010-06-18 | 2016-11-02 | 西奥尼克斯公司 | 高速光敏设备及相关方法 |
JP2012084748A (ja) * | 2010-10-13 | 2012-04-26 | Sharp Corp | 固体撮像素子および電子情報機器 |
US9496308B2 (en) | 2011-06-09 | 2016-11-15 | Sionyx, Llc | Process module for increasing the response of backside illuminated photosensitive imagers and associated methods |
EP2732402A2 (en) | 2011-07-13 | 2014-05-21 | Sionyx, Inc. | Biometric imaging devices and associated methods |
JP6012987B2 (ja) * | 2012-02-29 | 2016-10-25 | 株式会社東芝 | イメージセンサの製造方法 |
US9064764B2 (en) | 2012-03-22 | 2015-06-23 | Sionyx, Inc. | Pixel isolation elements, devices, and associated methods |
JP6466346B2 (ja) | 2013-02-15 | 2019-02-06 | サイオニクス、エルエルシー | アンチブルーミング特性を有するハイダイナミックレンジcmos画像センサおよび関連づけられた方法 |
US20140273525A1 (en) * | 2013-03-13 | 2014-09-18 | Intermolecular, Inc. | Atomic Layer Deposition of Reduced-Leakage Post-Transition Metal Oxide Films |
US9939251B2 (en) | 2013-03-15 | 2018-04-10 | Sionyx, Llc | Three dimensional imaging utilizing stacked imager devices and associated methods |
WO2014209421A1 (en) | 2013-06-29 | 2014-12-31 | Sionyx, Inc. | Shallow trench textured regions and associated methods |
CN105336752B (zh) * | 2014-06-23 | 2018-08-21 | 上海箩箕技术有限公司 | 面阵传感器装置及其形成方法 |
JP6598830B2 (ja) * | 2017-08-31 | 2019-10-30 | キヤノン株式会社 | 光電変換装置の製造方法 |
CN108063146A (zh) * | 2017-12-15 | 2018-05-22 | 上海华力微电子有限公司 | Cmos图像传感器的制造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000013370A (ja) | 1998-06-19 | 2000-01-14 | Nippon Telegr & Teleph Corp <Ntt> | 多段認証方法、装置およびこの方法を記録した記録媒体 |
JP2000133700A (ja) | 1998-10-22 | 2000-05-12 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US6194258B1 (en) * | 2000-01-18 | 2001-02-27 | Taiwan Semiconductor Manufacturing Company | Method of forming an image sensor cell and a CMOS logic circuit device |
US6407440B1 (en) * | 2000-02-25 | 2002-06-18 | Micron Technology Inc. | Pixel cell with high storage capacitance for a CMOS imager |
JP3782297B2 (ja) * | 2000-03-28 | 2006-06-07 | 株式会社東芝 | 固体撮像装置及びその製造方法 |
JP2002270808A (ja) | 2001-03-13 | 2002-09-20 | Matsushita Electric Ind Co Ltd | Mos型撮像装置 |
JP4703883B2 (ja) | 2001-04-09 | 2011-06-15 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2003264277A (ja) | 2002-03-07 | 2003-09-19 | Fujitsu Ltd | Cmosイメージセンサおよびその製造方法 |
KR100487525B1 (ko) * | 2002-04-25 | 2005-05-03 | 삼성전자주식회사 | 실리콘게르마늄 게이트를 이용한 반도체 소자 및 그 제조방법 |
US6897504B2 (en) * | 2003-03-31 | 2005-05-24 | Taiwan Semiconductor Manufacturing | Salicided MOS device and one-sided salicided MOS device, and simultaneous fabrication method thereof |
-
2004
- 2004-01-09 JP JP2004004538A patent/JP3729826B2/ja not_active Expired - Fee Related
- 2004-12-29 KR KR1020040115125A patent/KR100661331B1/ko not_active IP Right Cessation
- 2004-12-30 TW TW093141288A patent/TW200527602A/zh unknown
-
2005
- 2005-01-05 US US11/029,842 patent/US7285482B2/en active Active
- 2005-01-10 EP EP05000337A patent/EP1553632A3/en not_active Withdrawn
- 2005-01-10 CN CNB2005100039036A patent/CN100454564C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR100661331B1 (ko) | 2006-12-27 |
US7285482B2 (en) | 2007-10-23 |
TW200527602A (en) | 2005-08-16 |
CN1638140A (zh) | 2005-07-13 |
KR20050073530A (ko) | 2005-07-14 |
EP1553632A3 (en) | 2009-06-03 |
JP2005197605A (ja) | 2005-07-21 |
US20050153469A1 (en) | 2005-07-14 |
CN100454564C (zh) | 2009-01-21 |
EP1553632A2 (en) | 2005-07-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3729826B2 (ja) | 固体撮像装置の製造方法 | |
US9825077B2 (en) | Photoelectric conversion device, method for producing photoelectric conversion device, and image pickup system | |
JP5320659B2 (ja) | 固体撮像装置 | |
JP5538922B2 (ja) | 固体撮像装置の製造方法 | |
JP4729933B2 (ja) | 固体撮像装置の製造方法 | |
US8426287B2 (en) | Method of manufacturing semiconductor device, solid-state imaging device, and solid-state imaging apparatus | |
US20120119272A1 (en) | Solid-state image sensor, method of manufacturing the same, and imaging system | |
US20070020796A1 (en) | Image sensor having multi-gate insulating layers and fabrication method | |
JP4449106B2 (ja) | Mos型固体撮像装置及びその製造方法 | |
JP2011155168A (ja) | 半導体素子及びその製造方法、並びに固体撮像装置 | |
JP2016092203A (ja) | 固体撮像装置および固体撮像装置の製造方法 | |
JP2008108916A (ja) | 固体撮像装置及び電子機器 | |
JP2006210583A (ja) | 固体撮像装置及びその製造方法 | |
JP2008016723A (ja) | 固体撮像装置の製造方法および固体撮像装置 | |
JP2008177306A (ja) | 固体撮像装置 | |
JP2006294756A (ja) | 半導体装置の製造方法 | |
JP2006196769A (ja) | 半導体装置及びその製造方法 | |
JP2009123865A (ja) | 固体撮像装置およびその製造方法 | |
JP2006261414A (ja) | 固体撮像装置およびその製造方法 | |
JP2009158753A (ja) | 半導体装置の製造方法および半導体装置 | |
JP2006041080A (ja) | 固体撮像装置 | |
TWI399851B (zh) | 固態成像裝置,製造固態成像裝置之方法,及成像裝置 | |
JP2009038207A (ja) | 固体撮像装置およびその製造方法 | |
JP2007134641A (ja) | 半導体装置の製造方法 | |
KR20070069594A (ko) | 이미지 센서의 형성 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20050922 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20051004 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091014 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091014 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101014 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111014 Year of fee payment: 6 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121014 Year of fee payment: 7 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131014 Year of fee payment: 8 |
|
LAPS | Cancellation because of no payment of annual fees |