CN100454564C - 用于制造固态成像装置的方法 - Google Patents
用于制造固态成像装置的方法 Download PDFInfo
- Publication number
- CN100454564C CN100454564C CNB2005100039036A CN200510003903A CN100454564C CN 100454564 C CN100454564 C CN 100454564C CN B2005100039036 A CNB2005100039036 A CN B2005100039036A CN 200510003903 A CN200510003903 A CN 200510003903A CN 100454564 C CN100454564 C CN 100454564C
- Authority
- CN
- China
- Prior art keywords
- image pickup
- photodiode
- solid state
- mos transistor
- state image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 238000003384 imaging method Methods 0.000 title abstract description 7
- 238000000034 method Methods 0.000 claims abstract description 52
- 238000010438 heat treatment Methods 0.000 claims abstract description 18
- 238000002955 isolation Methods 0.000 claims abstract description 6
- 239000007787 solid Substances 0.000 claims description 37
- 238000000137 annealing Methods 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 16
- 238000003860 storage Methods 0.000 claims description 11
- 238000002347 injection Methods 0.000 claims description 9
- 239000007924 injection Substances 0.000 claims description 9
- 230000003647 oxidation Effects 0.000 claims description 6
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- 238000006243 chemical reaction Methods 0.000 claims description 2
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- 229910021332 silicide Inorganic materials 0.000 description 22
- 238000005516 engineering process Methods 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- 150000002500 ions Chemical class 0.000 description 12
- 238000004151 rapid thermal annealing Methods 0.000 description 12
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 12
- 239000010410 layer Substances 0.000 description 11
- -1 silicide metals Chemical class 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 239000010936 titanium Substances 0.000 description 8
- 239000002253 acid Substances 0.000 description 7
- 150000003839 salts Chemical class 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 230000002950 deficient Effects 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 230000004913 activation Effects 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
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- 239000011229 interlayer Substances 0.000 description 4
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- 230000002093 peripheral effect Effects 0.000 description 3
- 229910021341 titanium silicide Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000005280 amorphization Methods 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
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- 150000002739 metals Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
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- 238000003825 pressing Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
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- 238000007669 thermal treatment Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (5)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004004538A JP3729826B2 (ja) | 2004-01-09 | 2004-01-09 | 固体撮像装置の製造方法 |
JP004538/2004 | 2004-01-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1638140A CN1638140A (zh) | 2005-07-13 |
CN100454564C true CN100454564C (zh) | 2009-01-21 |
Family
ID=34587729
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100039036A Expired - Fee Related CN100454564C (zh) | 2004-01-09 | 2005-01-10 | 用于制造固态成像装置的方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7285482B2 (zh) |
EP (1) | EP1553632A3 (zh) |
JP (1) | JP3729826B2 (zh) |
KR (1) | KR100661331B1 (zh) |
CN (1) | CN100454564C (zh) |
TW (1) | TW200527602A (zh) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7442629B2 (en) | 2004-09-24 | 2008-10-28 | President & Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
US7057256B2 (en) | 2001-05-25 | 2006-06-06 | President & Fellows Of Harvard College | Silicon-based visible and near-infrared optoelectric devices |
JP4843951B2 (ja) * | 2005-01-27 | 2011-12-21 | ソニー株式会社 | 固体撮像装置の製造方法、固体撮像装置およびカメラ |
KR100698100B1 (ko) * | 2005-09-21 | 2007-03-23 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
KR20070033718A (ko) * | 2005-09-22 | 2007-03-27 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
JP2007142035A (ja) * | 2005-11-16 | 2007-06-07 | Matsushita Electric Ind Co Ltd | 固体撮像装置及びその製造方法 |
US20070196988A1 (en) * | 2006-02-23 | 2007-08-23 | Shroff Mehul D | Poly pre-doping anneals for improved gate profiles |
JP5116264B2 (ja) * | 2006-07-10 | 2013-01-09 | キヤノン株式会社 | 光電変換装置、光電変換装置の製造方法および光電変換装置を用いた撮像システム |
JP5110820B2 (ja) | 2006-08-02 | 2012-12-26 | キヤノン株式会社 | 光電変換装置、光電変換装置の製造方法及び撮像システム |
US7732844B2 (en) | 2006-11-03 | 2010-06-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Crosstalk improvement through P on N structure for image sensor |
KR100859481B1 (ko) * | 2006-12-29 | 2008-09-23 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
US7679083B2 (en) | 2007-03-30 | 2010-03-16 | Samsung Electronics Co., Ltd. | Semiconductor integrated test structures for electron beam inspection of semiconductor wafers |
JP2009065118A (ja) * | 2007-08-09 | 2009-03-26 | Panasonic Corp | 固体撮像装置 |
KR20090022512A (ko) * | 2007-08-30 | 2009-03-04 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법 |
JP5347283B2 (ja) * | 2008-03-05 | 2013-11-20 | ソニー株式会社 | 固体撮像装置およびその製造方法 |
JP4793402B2 (ja) * | 2008-04-21 | 2011-10-12 | ソニー株式会社 | 固体撮像装置とその製造方法、及び電子機器 |
JP4759590B2 (ja) * | 2008-05-09 | 2011-08-31 | キヤノン株式会社 | 光電変換装置及びそれを用いた撮像システム |
JP5365221B2 (ja) * | 2009-01-29 | 2013-12-11 | ソニー株式会社 | 固体撮像装置、その製造方法および撮像装置 |
US8680591B2 (en) | 2009-09-17 | 2014-03-25 | Sionyx, Inc. | Photosensitive imaging devices and associated methods |
US9673243B2 (en) | 2009-09-17 | 2017-06-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
US8476681B2 (en) * | 2009-09-17 | 2013-07-02 | Sionyx, Inc. | Photosensitive imaging devices and associated methods |
US9911781B2 (en) | 2009-09-17 | 2018-03-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
US8692198B2 (en) | 2010-04-21 | 2014-04-08 | Sionyx, Inc. | Photosensitive imaging devices and associated methods |
WO2011160130A2 (en) | 2010-06-18 | 2011-12-22 | Sionyx, Inc | High speed photosensitive devices and associated methods |
JP2012084748A (ja) * | 2010-10-13 | 2012-04-26 | Sharp Corp | 固体撮像素子および電子情報機器 |
US9496308B2 (en) | 2011-06-09 | 2016-11-15 | Sionyx, Llc | Process module for increasing the response of backside illuminated photosensitive imagers and associated methods |
EP2732402A2 (en) | 2011-07-13 | 2014-05-21 | Sionyx, Inc. | Biometric imaging devices and associated methods |
JP6012987B2 (ja) * | 2012-02-29 | 2016-10-25 | 株式会社東芝 | イメージセンサの製造方法 |
US9064764B2 (en) | 2012-03-22 | 2015-06-23 | Sionyx, Inc. | Pixel isolation elements, devices, and associated methods |
KR20150130303A (ko) | 2013-02-15 | 2015-11-23 | 사이오닉스, 아이엔씨. | 안티 블루밍 특성 및 관련 방법을 가지는 높은 동적 범위의 cmos 이미지 센서 |
US20140273525A1 (en) * | 2013-03-13 | 2014-09-18 | Intermolecular, Inc. | Atomic Layer Deposition of Reduced-Leakage Post-Transition Metal Oxide Films |
US9939251B2 (en) | 2013-03-15 | 2018-04-10 | Sionyx, Llc | Three dimensional imaging utilizing stacked imager devices and associated methods |
US9209345B2 (en) | 2013-06-29 | 2015-12-08 | Sionyx, Inc. | Shallow trench textured regions and associated methods |
CN105336752B (zh) * | 2014-06-23 | 2018-08-21 | 上海箩箕技术有限公司 | 面阵传感器装置及其形成方法 |
JP6598830B2 (ja) * | 2017-08-31 | 2019-10-30 | キヤノン株式会社 | 光電変換装置の製造方法 |
CN108063146A (zh) * | 2017-12-15 | 2018-05-22 | 上海华力微电子有限公司 | Cmos图像传感器的制造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1327269A (zh) * | 2000-03-28 | 2001-12-19 | 株式会社东芝 | 固体摄像器件及其制造方法 |
US6441444B1 (en) * | 1998-10-22 | 2002-08-27 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having a nitride barrier for preventing formation of structural defects |
JP2002270808A (ja) * | 2001-03-13 | 2002-09-20 | Matsushita Electric Ind Co Ltd | Mos型撮像装置 |
US20030197228A1 (en) * | 2002-03-07 | 2003-10-23 | Fujitsu Limited | CMOS image sensor and method of fabricating the same |
CN1453850A (zh) * | 2002-04-25 | 2003-11-05 | 三星电子株式会社 | 具有硅锗栅极的半导体器件及其制作方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000013370A (ja) | 1998-06-19 | 2000-01-14 | Nippon Telegr & Teleph Corp <Ntt> | 多段認証方法、装置およびこの方法を記録した記録媒体 |
US6194258B1 (en) * | 2000-01-18 | 2001-02-27 | Taiwan Semiconductor Manufacturing Company | Method of forming an image sensor cell and a CMOS logic circuit device |
US6407440B1 (en) * | 2000-02-25 | 2002-06-18 | Micron Technology Inc. | Pixel cell with high storage capacitance for a CMOS imager |
JP4703883B2 (ja) | 2001-04-09 | 2011-06-15 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6897504B2 (en) * | 2003-03-31 | 2005-05-24 | Taiwan Semiconductor Manufacturing | Salicided MOS device and one-sided salicided MOS device, and simultaneous fabrication method thereof |
-
2004
- 2004-01-09 JP JP2004004538A patent/JP3729826B2/ja not_active Expired - Fee Related
- 2004-12-29 KR KR1020040115125A patent/KR100661331B1/ko not_active IP Right Cessation
- 2004-12-30 TW TW093141288A patent/TW200527602A/zh unknown
-
2005
- 2005-01-05 US US11/029,842 patent/US7285482B2/en active Active
- 2005-01-10 CN CNB2005100039036A patent/CN100454564C/zh not_active Expired - Fee Related
- 2005-01-10 EP EP05000337A patent/EP1553632A3/en not_active Withdrawn
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6441444B1 (en) * | 1998-10-22 | 2002-08-27 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having a nitride barrier for preventing formation of structural defects |
CN1327269A (zh) * | 2000-03-28 | 2001-12-19 | 株式会社东芝 | 固体摄像器件及其制造方法 |
JP2002270808A (ja) * | 2001-03-13 | 2002-09-20 | Matsushita Electric Ind Co Ltd | Mos型撮像装置 |
US20030197228A1 (en) * | 2002-03-07 | 2003-10-23 | Fujitsu Limited | CMOS image sensor and method of fabricating the same |
CN1453850A (zh) * | 2002-04-25 | 2003-11-05 | 三星电子株式会社 | 具有硅锗栅极的半导体器件及其制作方法 |
Also Published As
Publication number | Publication date |
---|---|
CN1638140A (zh) | 2005-07-13 |
US20050153469A1 (en) | 2005-07-14 |
KR100661331B1 (ko) | 2006-12-27 |
EP1553632A2 (en) | 2005-07-13 |
TW200527602A (en) | 2005-08-16 |
KR20050073530A (ko) | 2005-07-14 |
EP1553632A3 (en) | 2009-06-03 |
JP3729826B2 (ja) | 2005-12-21 |
US7285482B2 (en) | 2007-10-23 |
JP2005197605A (ja) | 2005-07-21 |
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