JP6012987B2 - イメージセンサの製造方法 - Google Patents
イメージセンサの製造方法 Download PDFInfo
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- JP6012987B2 JP6012987B2 JP2012043393A JP2012043393A JP6012987B2 JP 6012987 B2 JP6012987 B2 JP 6012987B2 JP 2012043393 A JP2012043393 A JP 2012043393A JP 2012043393 A JP2012043393 A JP 2012043393A JP 6012987 B2 JP6012987 B2 JP 6012987B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 238000003384 imaging method Methods 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 28
- 238000000137 annealing Methods 0.000 claims description 27
- 238000009792 diffusion process Methods 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 11
- 238000002955 isolation Methods 0.000 claims description 10
- 238000000926 separation method Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 5
- 239000011295 pitch Substances 0.000 description 40
- 230000031700 light absorption Effects 0.000 description 22
- 230000003287 optical effect Effects 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000001015 X-ray lithography Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 229910052724 xenon Inorganic materials 0.000 description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000005457 Black-body radiation Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
図1は、第1の実施形態に係わるCMOSイメージセンサにおける回路配置例を示す平面図である。なお、この図1では、半導体基板10上に形成された複数個うちの1つのチップ11のみを示している。
図6は、第2の実施形態のCMOSイメージセンサに用いた撮像素子領域、ロジック回路領域、及び境界領域の構成を示す断面図である。なお、図3と同一部分には同一符号を付して、その詳しい説明は省略する。
なお、本発明は上述した各実施形態に限定されるものではない。光アニール装置は、前記図4に示す構造に何ら限定されるものではなく、数msでの光アニールを実現できるものであればよい。さらに、アニール手法は必ずしもFLAに限らず、LSA(Laser Spike Annealing)を用いることも可能である。
11…チップ
20…撮像素子領域
21…撮像素子
22…n型領域
23…STI(撮像素子領域の素子分離部)
24…フォトダイオード部
30…ロジック回路領域
35…GC(ゲートパターン)
33…STI(ロジック回路領域の素子分離部)
40…境界領域
45…ダミーGC(ダミーゲートパターン)
50…チャンバ
51…サセプタ
52…光源
Claims (5)
- 半導体基板上に、撮像素子領域と、前記撮像素子領域とは異なる領域にロジック回路領域と、前記撮像素子領域と前記ロジック回路領域との間の境界領域とを形成する工程と、
前記撮像素子領域に形成される複数の撮像素子の間を分離するための素子分離部、前記境界領域内に一定ピッチで配置されるダミー素子分離部を同時に形成する工程と、
前記撮像素子領域に撮像素子を形成する工程と、
前記ロジック回路領域に回路素子を形成する工程と、
前記撮像素子領域、前記ロジック回路領域、及び前記ダミー素子分離部が形成された後に、前記基板に対して光アニール処理を施す工程と、
を含み、前記基板に対するアニール時間をtとし、前記半導体基板の温度拡散係数をαとしたときに、前記アニールの熱拡散長Lを、
L=(αt) 1/2
と定義し、前記境界領域の幅を前記熱拡散長以上に設定するイメージセンサの製造方法。 - 前記ダミー素子分離部は、前記撮像素子領域の前記素子分離部と同じ材料である請求項1に記載のイメージセンサの製造方法。
- 半導体基板上に、撮像素子領域と、前記撮像素子領域とは異なる領域にロジック回路領域と、前記撮像素子領域と前記ロジック回路領域との間の境界領域とを形成する工程と、
前記撮像素子領域に複数の撮像素子を形成する工程と、
前記ロジック回路領域にゲートパターンを有する回路素子を形成すると同時に、前記境界領域内に、前記ロジック回路領域における前記ゲートパターンのピッチよりも大きいピッチでダミーゲートパターンを形成する工程と、
前記撮像素子領域、前記ロジック回路領域、及びダミーゲートパターンが形成された後に、前記基板に対して光アニール処理を施す工程と、
を含み、前記基板に対するアニール時間をtとし、前記半導体基板の温度拡散係数をαとしたときに、前記アニールの熱拡散長Lを、
L=(αt) 1/2
と定義し、前記境界領域の幅を前記熱拡散長以上に設定するイメージセンサの製造方法。 - 前記光アニールは、FLA又はLSAである請求項1〜3の何れかに記載のイメージセンサの製造方法。
- 前記境界領域は、前記撮像素子領域と前記ロジック回路領域とを熱的に独立とするように形成される請求項1〜3の何れかに記載のイメージセンサの製造方法。
Priority Applications (2)
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JP2012043393A JP6012987B2 (ja) | 2012-02-29 | 2012-02-29 | イメージセンサの製造方法 |
US13/737,079 US9281328B2 (en) | 2012-02-29 | 2013-01-09 | Image sensor that includes a boundary region formed between a logic circuit region and an image-sensing element region and manufacturing method thereof |
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JP2012043393A JP6012987B2 (ja) | 2012-02-29 | 2012-02-29 | イメージセンサの製造方法 |
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JP6012987B2 true JP6012987B2 (ja) | 2016-10-25 |
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Families Citing this family (5)
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JP6012987B2 (ja) * | 2012-02-29 | 2016-10-25 | 株式会社東芝 | イメージセンサの製造方法 |
JP6569549B2 (ja) * | 2015-05-01 | 2019-09-04 | セイコーエプソン株式会社 | 電気光学装置、電子機器、及び電気光学装置の製造方法 |
JP2017158097A (ja) * | 2016-03-03 | 2017-09-07 | 株式会社デンソー | カメラ装置 |
KR20200039924A (ko) | 2018-10-08 | 2020-04-17 | 삼성전자주식회사 | 반도체 장치 |
JP7309647B2 (ja) | 2020-03-24 | 2023-07-18 | 株式会社東芝 | 受光装置及び半導体装置 |
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JP2000196055A (ja) * | 1998-12-24 | 2000-07-14 | Toshiba Corp | 固体撮像装置 |
JP3729826B2 (ja) * | 2004-01-09 | 2005-12-21 | 松下電器産業株式会社 | 固体撮像装置の製造方法 |
JP2005203617A (ja) * | 2004-01-16 | 2005-07-28 | Sony Corp | 固体撮像装置及びその製造方法 |
JP5002906B2 (ja) * | 2005-04-08 | 2012-08-15 | ソニー株式会社 | 固体撮像装置及びその製造方法 |
JP2009128539A (ja) | 2007-11-21 | 2009-06-11 | Panasonic Corp | 反射防止構造体の製造方法 |
JP5242145B2 (ja) | 2007-12-05 | 2013-07-24 | 株式会社東芝 | 半導体装置の製造方法 |
US8093920B2 (en) * | 2008-10-06 | 2012-01-10 | Semiconductor Diagnostics, Inc. | Accurate measuring of long steady state minority carrier diffusion lengths |
JP5453832B2 (ja) * | 2009-02-20 | 2014-03-26 | ソニー株式会社 | 固体撮像装置および撮像装置 |
JP5017303B2 (ja) * | 2009-03-25 | 2012-09-05 | 株式会社東芝 | 半導体装置 |
JP5367459B2 (ja) | 2009-05-28 | 2013-12-11 | 株式会社東芝 | 半導体撮像装置 |
JP2011155248A (ja) * | 2009-12-28 | 2011-08-11 | Sony Corp | 固体撮像装置とその製造方法並びにカメラ |
JP2011205049A (ja) | 2010-03-26 | 2011-10-13 | Toshiba Corp | 半導体集積回路 |
JP5577806B2 (ja) * | 2010-04-09 | 2014-08-27 | 富士通セミコンダクター株式会社 | 半導体装置の設計方法及び製造方法 |
JP5651387B2 (ja) * | 2010-06-24 | 2015-01-14 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置 |
JP5161941B2 (ja) * | 2010-09-08 | 2013-03-13 | 株式会社東芝 | 半導体装置の製造方法 |
JP6012987B2 (ja) * | 2012-02-29 | 2016-10-25 | 株式会社東芝 | イメージセンサの製造方法 |
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JP2013182893A (ja) | 2013-09-12 |
US20130221196A1 (en) | 2013-08-29 |
US9281328B2 (en) | 2016-03-08 |
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