JP5367459B2 - 半導体撮像装置 - Google Patents
半導体撮像装置 Download PDFInfo
- Publication number
- JP5367459B2 JP5367459B2 JP2009129262A JP2009129262A JP5367459B2 JP 5367459 B2 JP5367459 B2 JP 5367459B2 JP 2009129262 A JP2009129262 A JP 2009129262A JP 2009129262 A JP2009129262 A JP 2009129262A JP 5367459 B2 JP5367459 B2 JP 5367459B2
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- 239000004065 semiconductor Substances 0.000 title claims description 21
- 238000003384 imaging method Methods 0.000 title claims description 17
- 239000010949 copper Substances 0.000 claims abstract description 60
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052802 copper Inorganic materials 0.000 claims abstract description 12
- 238000006243 chemical reaction Methods 0.000 claims abstract description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 15
- 239000010410 layer Substances 0.000 description 44
- 239000011229 interlayer Substances 0.000 description 17
- 239000000758 substrate Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 9
- 239000001257 hydrogen Substances 0.000 description 9
- 229910052739 hydrogen Inorganic materials 0.000 description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000005245 sintering Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
Description
Claims (1)
- 複数の光電変換素子が配置された画素領域と、
前記画素領域の周辺に配置されたダミー画素領域、黒基準領域、ロジック回路領域を含む回路領域と、
前記画素領域及び前記回路領域に配置された銅配線と、
前記銅配線上に配置され、シリコン窒化膜により構成されたキャップ層と
を具備し、
前記画素領域及び前記回路領域の前記銅配線上以外の前記キャップ層が除去され、前記ダミー画素領域において、前記銅配線の無い領域が垂直方向上の同一位置に無いことを特徴とする半導体撮像装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009129262A JP5367459B2 (ja) | 2009-05-28 | 2009-05-28 | 半導体撮像装置 |
TW099105528A TWI422022B (zh) | 2009-05-28 | 2010-02-25 | Semiconductor imaging device and manufacturing method thereof |
CN2010101330053A CN101901820B (zh) | 2009-05-28 | 2010-03-10 | 半导体摄像器件及其制造方法 |
US12/725,511 US8816413B2 (en) | 2009-05-28 | 2010-03-17 | Semiconductor imaging device with which semiconductor elements of pixel area and other areas has same characteristics |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009129262A JP5367459B2 (ja) | 2009-05-28 | 2009-05-28 | 半導体撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010278232A JP2010278232A (ja) | 2010-12-09 |
JP5367459B2 true JP5367459B2 (ja) | 2013-12-11 |
Family
ID=43219273
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009129262A Expired - Fee Related JP5367459B2 (ja) | 2009-05-28 | 2009-05-28 | 半導体撮像装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8816413B2 (ja) |
JP (1) | JP5367459B2 (ja) |
CN (1) | CN101901820B (ja) |
TW (1) | TWI422022B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9553121B2 (en) | 2014-08-28 | 2017-01-24 | Renesas Electronics Corporation | Semiconductor device and method of manufacturing the same |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5513872B2 (ja) | 2009-12-18 | 2014-06-04 | 株式会社東芝 | 固体撮像装置 |
JP5693924B2 (ja) * | 2010-11-10 | 2015-04-01 | 株式会社東芝 | 半導体撮像装置 |
JP5826672B2 (ja) * | 2012-02-29 | 2015-12-02 | 株式会社東芝 | イメージセンサ及びその製造方法 |
JP6012987B2 (ja) | 2012-02-29 | 2016-10-25 | 株式会社東芝 | イメージセンサの製造方法 |
FR2990294A1 (fr) * | 2012-05-04 | 2013-11-08 | St Microelectronics Crolles 2 | Procede de fabrication d'une puce de circuit integre |
FR3009433B1 (fr) * | 2013-08-01 | 2015-09-11 | St Microelectronics Crolles 2 | Capteur d'images a illumination face arriere a faible courant d'obscurite |
JP6598436B2 (ja) * | 2014-08-08 | 2019-10-30 | キヤノン株式会社 | 光電変換装置、撮像システム、及び光電変換装置の製造方法 |
JP2016146376A (ja) | 2015-02-06 | 2016-08-12 | ルネサスエレクトロニクス株式会社 | 撮像装置およびその製造方法 |
JP6821291B2 (ja) * | 2015-05-29 | 2021-01-27 | キヤノン株式会社 | 光電変換装置、撮像システムおよび光電変換装置の製造方法 |
JP6625107B2 (ja) * | 2017-10-11 | 2019-12-25 | キヤノン株式会社 | 撮像装置 |
JP7393471B2 (ja) | 2021-06-03 | 2023-12-06 | シャープ株式会社 | 光電変換装置およびx線撮像装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4117672B2 (ja) * | 2002-05-01 | 2008-07-16 | ソニー株式会社 | 固体撮像素子及び固体撮像装置、並びにこれらの製造方法 |
US8218052B2 (en) * | 2003-03-07 | 2012-07-10 | Iconix Video, Inc. | High frame rate high definition imaging system and method |
JP2004311902A (ja) | 2003-04-10 | 2004-11-04 | Toshiba Corp | 半導体装置 |
KR100614793B1 (ko) * | 2004-09-23 | 2006-08-22 | 삼성전자주식회사 | 이미지 센서 및 이의 제조 방법. |
KR20070051642A (ko) * | 2005-11-15 | 2007-05-18 | 삼성전자주식회사 | 표시 기판, 이의 제조 방법 및 이를 갖는 표시 장치 |
KR100741099B1 (ko) * | 2005-12-20 | 2007-07-20 | 삼성에스디아이 주식회사 | 평판표시장치 및 그의 제조방법 |
US20070232074A1 (en) * | 2006-03-31 | 2007-10-04 | Kramadhati Ravi | Techniques for the synthesis of dense, high-quality diamond films using a dual seeding approach |
US7544982B2 (en) * | 2006-10-03 | 2009-06-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Image sensor device suitable for use with logic-embedded CIS chips and methods for making the same |
US7544992B2 (en) * | 2007-05-16 | 2009-06-09 | United Microelectronics Corp. | Illuminating efficiency-increasable and light-erasable embedded memory structure |
JP4799522B2 (ja) * | 2007-10-12 | 2011-10-26 | 株式会社東芝 | 撮像装置 |
JP2008199059A (ja) | 2008-05-01 | 2008-08-28 | Sony Corp | 固体撮像素子及びその製造方法 |
-
2009
- 2009-05-28 JP JP2009129262A patent/JP5367459B2/ja not_active Expired - Fee Related
-
2010
- 2010-02-25 TW TW099105528A patent/TWI422022B/zh not_active IP Right Cessation
- 2010-03-10 CN CN2010101330053A patent/CN101901820B/zh not_active Expired - Fee Related
- 2010-03-17 US US12/725,511 patent/US8816413B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9553121B2 (en) | 2014-08-28 | 2017-01-24 | Renesas Electronics Corporation | Semiconductor device and method of manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
TWI422022B (zh) | 2014-01-01 |
US20100301444A1 (en) | 2010-12-02 |
TW201106480A (en) | 2011-02-16 |
JP2010278232A (ja) | 2010-12-09 |
US8816413B2 (en) | 2014-08-26 |
CN101901820B (zh) | 2012-11-14 |
CN101901820A (zh) | 2010-12-01 |
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