JP4793402B2 - 固体撮像装置とその製造方法、及び電子機器 - Google Patents
固体撮像装置とその製造方法、及び電子機器 Download PDFInfo
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- Solid State Image Pick-Up Elements (AREA)
Description
また、本発明は、このような固体撮像装置を備えた電子機器を提供するものである。
出力回路7は、カラム信号処理回路5の各々から水平信号線10を通して順次に供給される信号に対し、信号処理を行って出力する。
その他の構成は、前述した第1実施の形態と同様であるので、図3と対応する部分には同一符号を付して重複説明を省略する。
その他の構成は、前述した第1実施の形態と同様であるので、図3と対応する部分には同一符号を付して重複説明を省略する。
図12に、本発明の電子機器の一例としてカメラに適用した実施の形態を示す。本実施の形態に係るカメラ93は、光学系(光学レンズ)94と、固体撮像装置95と、信号処理回路96とを備えてなる。固体撮像装置95は、上述した各実施の形態のいずれか1つの固体撮像装置が適用される。光学系94は、被写体からの像光(入射光)を固体撮像装置95の撮像面上に結像させる。これにより、固体撮像装置95の光電変換素子において一定期間信号電荷が蓄積される。信号処理回路96は、固体撮像装置95の出力信号に対して種々の信号処理を施して出力する。本実施の形態のカメラ93は、光学系94、固体撮像装置95、信号処理回路96がモジュール化したカメラモジュールの形態を含む。
さらに、図12の構成は、光学系94、固体撮像装置95、信号処理回路96がモジュール化した撮像機能を有するモジュール、いわゆる撮像機能モジュ−ルとして構成することができる。本発明は、このような撮像機能モジュールを備えた電子機器を構成することができる。
上例では信号電荷を電子とした固体撮像装置に適用したが、信号電荷を正孔とした固体撮像装置にも適用できる。
Claims (7)
- 光電変換部と複数の画素トランジスタからなる複数の画素が配列された画素部と、
複数のMOSトランジスタが形成された周辺回路部と、
画素部内の各画素を区画する、表面に絶縁膜を有する拡散分離構造、選択酸化による絶縁分離構造、もしくはSTI構造のいずれかによる素子分離部と、
前記周辺回路部の前記MOSトランジスタに形成された金属シリサイド層と、
前記各画素の全域に対応する領域を残し前記画素部の前記素子分離部に対応する領域の一部または全部を除いて形成されたシリサイドブロック膜と
を有する固体撮像装置。 - 前記シリサイドブロック膜が前記画素トランジスタのゲート電極の側壁膜を兼ねている
請求項1記載の固体撮像装置。 - 前記画素部における画素トランジスタのゲートゲート電極の前記素子分離部上に延長する部分に金属シリサイド膜を有する
請求項1又は2記載の固体撮像装置。 - 光電変換部と複数の画素トランジスタからなる複数の画素が配列され、各画素を区画する、表面に絶縁膜を有する拡散分離構造、選択酸化による絶縁分離構造、もしくはSTI構造のいずれかによる素子分離部が形成された画素部と、複数のMOSトランジスタが形成された周辺回路部を形成する工程と、
前記画素部の全域にシリサイドブロック膜を形成する工程と、
前記各画素の全域に対応する領域の前記シリサイドブロック膜を残し前記画素部における前記素子分離部の一部または全部に対応する領域の前記シリサイドブロック膜を選択的に除去する工程と、
前記画素部及び前記周辺回路部に金属膜を形成し、前記周辺回路部の複数のMOSトランジスタにおいて金属シリサイド層を形成する工程と、
残余の金属膜を除去する工程と
を有する固体撮像装置の製造方法。 - 前記シリサイドブロック膜を、前記画素トランジスタのゲート電極の側壁膜を兼ねるように、前記画素部に形成する
請求項4記載の固体撮像装置の製造方法。 - 前記シリサイドブロック膜を選択的に除去する工程において、前記画素トランジスタのゲート電極の前記素子分離部上に延長する部分のシリサイドブロック膜をも選択的に除去し、
前記金属シリサイド層を形成する工程において、前記素子分離部上に延長するゲート電極の部分にも金属シリサイド層を形成する
請求項4又は5記載の固体撮像装置の製造方法。 - 固体撮像装置と、
前記固体撮像装置の光電変換素子に入射光を導く光学系と、
前記固体撮像装置の出力信号を処理する信号処理回路とを備え、
前記固体撮像装置が請求項1乃至3のいずれかに記載の固体撮像装置で構成されている
電子機器。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008110669A JP4793402B2 (ja) | 2008-04-21 | 2008-04-21 | 固体撮像装置とその製造方法、及び電子機器 |
TW098109792A TWI397174B (zh) | 2008-04-21 | 2009-03-25 | 製造一固態成像器件之方法 |
EP09004393A EP2112690A1 (en) | 2008-04-21 | 2009-03-26 | Solid-state imaging device and method of manufacturing the same and electronic apparatus |
US12/425,898 US8298851B2 (en) | 2008-04-21 | 2009-04-17 | Method of manufacturing a solid-state imaging device with a silicide blocking layer and electronic apparatus |
CN200910131047.0A CN101567377B (zh) | 2008-04-21 | 2009-04-20 | 固体摄像装置、固体摄像装置制造方法以及电子设备 |
US12/852,736 US8390043B2 (en) | 2008-04-21 | 2010-08-09 | Solid-state imaging device with stress-relieving silicide blocking layer and electronic apparatus comprising said solid-state device |
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JP2008110669A JP4793402B2 (ja) | 2008-04-21 | 2008-04-21 | 固体撮像装置とその製造方法、及び電子機器 |
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JP2009266843A JP2009266843A (ja) | 2009-11-12 |
JP2009266843A5 JP2009266843A5 (ja) | 2010-04-22 |
JP4793402B2 true JP4793402B2 (ja) | 2011-10-12 |
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US (2) | US8298851B2 (ja) |
EP (1) | EP2112690A1 (ja) |
JP (1) | JP4793402B2 (ja) |
CN (1) | CN101567377B (ja) |
TW (1) | TWI397174B (ja) |
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JP5704811B2 (ja) * | 2009-12-11 | 2015-04-22 | キヤノン株式会社 | 固体撮像装置の製造方法 |
EP3514831B1 (en) | 2009-12-26 | 2021-10-13 | Canon Kabushiki Kaisha | Solid-state image pickup apparatus and image pickup system |
JP2011199196A (ja) * | 2010-03-23 | 2011-10-06 | Toshiba Corp | 固体撮像装置 |
JP2013045879A (ja) * | 2011-08-24 | 2013-03-04 | Sony Corp | 半導体装置、半導体装置の製造方法、固体撮像装置、固体撮像装置の製造方法、電子機器 |
US8610234B2 (en) * | 2011-09-02 | 2013-12-17 | Hoon Kim | Unit pixel of image sensor and photo detector thereof |
US9659981B2 (en) | 2012-04-25 | 2017-05-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Backside illuminated image sensor with negatively charged layer |
US9287308B2 (en) * | 2013-04-08 | 2016-03-15 | Omnivision Technologies, Inc. | Image sensor having metal contact coupled through a contact etch stop layer with an isolation region |
JP6159184B2 (ja) * | 2013-07-25 | 2017-07-05 | キヤノン株式会社 | 光電変換装置及び撮像システム |
JP6346488B2 (ja) | 2014-04-21 | 2018-06-20 | キヤノン株式会社 | 半導体装置、固体撮像装置、それらの製造方法およびカメラ |
KR102367384B1 (ko) * | 2015-01-13 | 2022-02-25 | 삼성전자주식회사 | 이미지 센서 및 그 형성 방법 |
US9613916B2 (en) * | 2015-03-12 | 2017-04-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Protection ring for image sensors |
CN110164889A (zh) * | 2019-05-14 | 2019-08-23 | 德淮半导体有限公司 | 图像传感器及其形成方法 |
TWI748226B (zh) * | 2019-08-16 | 2021-12-01 | 新唐科技股份有限公司 | 光學感測濾光器及其形成方法 |
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JP3782297B2 (ja) * | 2000-03-28 | 2006-06-07 | 株式会社東芝 | 固体撮像装置及びその製造方法 |
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JP4470734B2 (ja) * | 2002-05-14 | 2010-06-02 | ソニー株式会社 | 半導体装置とその製造方法、並びに電子機器 |
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- 2009-03-25 TW TW098109792A patent/TWI397174B/zh not_active IP Right Cessation
- 2009-03-26 EP EP09004393A patent/EP2112690A1/en not_active Withdrawn
- 2009-04-17 US US12/425,898 patent/US8298851B2/en not_active Expired - Fee Related
- 2009-04-20 CN CN200910131047.0A patent/CN101567377B/zh active Active
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2010
- 2010-08-09 US US12/852,736 patent/US8390043B2/en active Active
Also Published As
Publication number | Publication date |
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TWI397174B (zh) | 2013-05-21 |
CN101567377A (zh) | 2009-10-28 |
US8298851B2 (en) | 2012-10-30 |
EP2112690A1 (en) | 2009-10-28 |
US20090261392A1 (en) | 2009-10-22 |
US8390043B2 (en) | 2013-03-05 |
CN101567377B (zh) | 2013-08-14 |
JP2009266843A (ja) | 2009-11-12 |
TW200947690A (en) | 2009-11-16 |
US20100295107A1 (en) | 2010-11-25 |
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