DE602005023323D1 - Verfahren zur herstellung von detektoren auf siliziumbasis mit lasermikrostrukturierten oberflächenschichten mit elektronendonatoren - Google Patents
Verfahren zur herstellung von detektoren auf siliziumbasis mit lasermikrostrukturierten oberflächenschichten mit elektronendonatorenInfo
- Publication number
- DE602005023323D1 DE602005023323D1 DE602005023323T DE602005023323T DE602005023323D1 DE 602005023323 D1 DE602005023323 D1 DE 602005023323D1 DE 602005023323 T DE602005023323 T DE 602005023323T DE 602005023323 T DE602005023323 T DE 602005023323T DE 602005023323 D1 DE602005023323 D1 DE 602005023323D1
- Authority
- DE
- Germany
- Prior art keywords
- electron
- endonators
- laser
- substrate
- surface layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000002344 surface layer Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- 239000000470 constituent Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 abstract 1
- 239000002800 charge carrier Substances 0.000 abstract 1
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 1
- -1 e.g. Substances 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 229910052717 sulfur Inorganic materials 0.000 abstract 1
- 239000011593 sulfur Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
- H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Inorganic Chemistry (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Light Receiving Elements (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Photovoltaic Devices (AREA)
- Recrystallisation Techniques (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Laser Beam Processing (AREA)
- Drying Of Semiconductors (AREA)
- Silicon Compounds (AREA)
- Semiconductor Lasers (AREA)
- Lasers (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/950,248 US7354792B2 (en) | 2001-05-25 | 2004-09-24 | Manufacture of silicon-based devices having disordered sulfur-doped surface layers |
US10/950,230 US7057256B2 (en) | 2001-05-25 | 2004-09-24 | Silicon-based visible and near-infrared optoelectric devices |
PCT/US2005/034180 WO2006086014A2 (en) | 2004-09-24 | 2005-09-23 | Method for manufacturing of silicon-based detektors having laser-microstructured sulfur-doped surface layers |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602005023323D1 true DE602005023323D1 (de) | 2010-10-14 |
Family
ID=36607386
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602005023323T Active DE602005023323D1 (de) | 2004-09-24 | 2005-09-23 | Verfahren zur herstellung von detektoren auf siliziumbasis mit lasermikrostrukturierten oberflächenschichten mit elektronendonatoren |
Country Status (6)
Country | Link |
---|---|
EP (2) | EP1794804B1 (de) |
JP (3) | JP2008515196A (de) |
AT (1) | ATE480009T1 (de) |
DE (1) | DE602005023323D1 (de) |
HK (1) | HK1108060A1 (de) |
WO (1) | WO2006086014A2 (de) |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7442629B2 (en) | 2004-09-24 | 2008-10-28 | President & Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
US7057256B2 (en) | 2001-05-25 | 2006-06-06 | President & Fellows Of Harvard College | Silicon-based visible and near-infrared optoelectric devices |
DE602005023323D1 (de) * | 2004-09-24 | 2010-10-14 | Harvard College | Verfahren zur herstellung von detektoren auf siliziumbasis mit lasermikrostrukturierten oberflächenschichten mit elektronendonatoren |
WO2006138442A2 (en) | 2005-06-14 | 2006-12-28 | Ebstein Steven M | Applications of laser-processed substrate for molecular diagnostics |
US8184284B2 (en) | 2005-06-14 | 2012-05-22 | Ebstein Steven M | Laser-processed substrate for molecular diagnostics |
US7715003B2 (en) | 2005-06-14 | 2010-05-11 | President & Fellows Of Harvard College | Metalized semiconductor substrates for raman spectroscopy |
WO2008091858A2 (en) | 2007-01-23 | 2008-07-31 | President & Fellows Of Harvard College | Non-invasive optical analysis using surface enhanced raman spectroscopy |
WO2009017846A1 (en) | 2007-07-30 | 2009-02-05 | President And Fellows Of Harvard College | Substrates for raman spectroscopy having discontinuous metal coatings |
US8058615B2 (en) | 2008-02-29 | 2011-11-15 | Sionyx, Inc. | Wide spectral range hybrid image detector |
WO2010042121A1 (en) * | 2008-10-09 | 2010-04-15 | Sionyx Inc. | Method for contact formation in semiconductor device |
JP5805681B2 (ja) * | 2009-02-24 | 2015-11-04 | 浜松ホトニクス株式会社 | フォトダイオードアレイ |
JP5185206B2 (ja) | 2009-02-24 | 2013-04-17 | 浜松ホトニクス株式会社 | 半導体光検出素子 |
JP2013065912A (ja) * | 2009-02-24 | 2013-04-11 | Hamamatsu Photonics Kk | フォトダイオードの製造方法及びフォトダイオード |
JP5185205B2 (ja) | 2009-02-24 | 2013-04-17 | 浜松ホトニクス株式会社 | 半導体光検出素子 |
JP5185236B2 (ja) * | 2009-02-24 | 2013-04-17 | 浜松ホトニクス株式会社 | フォトダイオードの製造方法及びフォトダイオード |
JP5185208B2 (ja) * | 2009-02-24 | 2013-04-17 | 浜松ホトニクス株式会社 | フォトダイオード及びフォトダイオードアレイ |
JP5185207B2 (ja) | 2009-02-24 | 2013-04-17 | 浜松ホトニクス株式会社 | フォトダイオードアレイ |
JP5185157B2 (ja) * | 2009-02-25 | 2013-04-17 | 浜松ホトニクス株式会社 | フォトダイオードの製造方法及びフォトダイオード |
JP5363222B2 (ja) * | 2009-07-13 | 2013-12-11 | 浜松ホトニクス株式会社 | 半導体光検出素子及び半導体光検出素子の製造方法 |
JP5261304B2 (ja) * | 2009-07-13 | 2013-08-14 | 浜松ホトニクス株式会社 | 半導体光検出素子及び半導体光検出素子の製造方法 |
US9673243B2 (en) | 2009-09-17 | 2017-06-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
US9911781B2 (en) | 2009-09-17 | 2018-03-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
JP5616099B2 (ja) * | 2010-04-01 | 2014-10-29 | 浜松ホトニクス株式会社 | 距離センサ及び距離画像センサ |
JP5726434B2 (ja) * | 2010-04-14 | 2015-06-03 | 浜松ホトニクス株式会社 | 半導体光検出素子 |
US8692198B2 (en) | 2010-04-21 | 2014-04-08 | Sionyx, Inc. | Photosensitive imaging devices and associated methods |
CN103081128B (zh) | 2010-06-18 | 2016-11-02 | 西奥尼克斯公司 | 高速光敏设备及相关方法 |
DE102010061831A1 (de) | 2010-11-24 | 2012-05-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Halbleiterbauelement und Verfahren zu seiner Herstellung |
CN102169810B (zh) * | 2010-12-27 | 2013-07-03 | 清华大学 | 一种使用真空腔的激光处理装置和处理方法 |
US9496308B2 (en) | 2011-06-09 | 2016-11-15 | Sionyx, Llc | Process module for increasing the response of backside illuminated photosensitive imagers and associated methods |
WO2013010127A2 (en) | 2011-07-13 | 2013-01-17 | Sionyx, Inc. | Biometric imaging devices and associated methods |
US8865507B2 (en) | 2011-09-16 | 2014-10-21 | Sionyx, Inc. | Integrated visible and infrared imager devices and associated methods |
CN102400227B (zh) * | 2011-11-22 | 2013-03-13 | 深圳光启高等理工研究院 | 一种绒面黑硅材料的制备方法 |
US9064764B2 (en) | 2012-03-22 | 2015-06-23 | Sionyx, Inc. | Pixel isolation elements, devices, and associated methods |
JP5829223B2 (ja) * | 2013-01-17 | 2015-12-09 | 浜松ホトニクス株式会社 | フォトダイオードの製造方法及びフォトダイオード |
KR20150130303A (ko) | 2013-02-15 | 2015-11-23 | 사이오닉스, 아이엔씨. | 안티 블루밍 특성 및 관련 방법을 가지는 높은 동적 범위의 cmos 이미지 센서 |
US9939251B2 (en) | 2013-03-15 | 2018-04-10 | Sionyx, Llc | Three dimensional imaging utilizing stacked imager devices and associated methods |
US9209345B2 (en) | 2013-06-29 | 2015-12-08 | Sionyx, Inc. | Shallow trench textured regions and associated methods |
CN103794563B (zh) * | 2014-02-19 | 2017-06-06 | 金蔚 | 一种增强硅基成像器件ccd或者cmos器件红外响应的方法 |
CN104505432A (zh) * | 2014-12-16 | 2015-04-08 | 中国科学院长春光学精密机械与物理研究所 | 降低黑硅材料在红外波段吸收退化的方法 |
CN109421402B (zh) * | 2017-08-29 | 2020-09-22 | 武汉大学 | 一种高导电石墨烯薄膜阵列的激光雕刻制备方法 |
TR201819952A2 (tr) * | 2018-12-20 | 2020-07-21 | Hacettepe Ueniversitesi | Geni̇ş bant araliğinda çalişan bi̇r yarii̇letken fotodi̇yot ve elde etme yöntemi̇ |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4703996A (en) * | 1984-08-24 | 1987-11-03 | American Telephone And Telegraph Company, At&T Bell Laboratories | Integrated optical device having integral photodetector |
US5714404A (en) * | 1993-11-18 | 1998-02-03 | Regents Of The University Of California | Fabrication of polycrystalline thin films by pulsed laser processing |
US7390689B2 (en) * | 2001-05-25 | 2008-06-24 | President And Fellows Of Harvard College | Systems and methods for light absorption and field emission using microstructured silicon |
DE602005023323D1 (de) * | 2004-09-24 | 2010-10-14 | Harvard College | Verfahren zur herstellung von detektoren auf siliziumbasis mit lasermikrostrukturierten oberflächenschichten mit elektronendonatoren |
-
2005
- 2005-09-23 DE DE602005023323T patent/DE602005023323D1/de active Active
- 2005-09-23 AT AT05856921T patent/ATE480009T1/de not_active IP Right Cessation
- 2005-09-23 JP JP2007533655A patent/JP2008515196A/ja active Pending
- 2005-09-23 WO PCT/US2005/034180 patent/WO2006086014A2/en active Application Filing
- 2005-09-23 EP EP05856921A patent/EP1794804B1/de active Active
- 2005-09-23 EP EP09015646A patent/EP2164107A3/de not_active Withdrawn
-
2007
- 2007-12-12 HK HK07113542.9A patent/HK1108060A1/xx unknown
-
2011
- 2011-12-28 JP JP2011289259A patent/JP2012064987A/ja active Pending
-
2014
- 2014-06-17 JP JP2014124603A patent/JP5899271B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2012064987A (ja) | 2012-03-29 |
EP2164107A2 (de) | 2010-03-17 |
EP1794804B1 (de) | 2010-09-01 |
WO2006086014A3 (en) | 2006-09-28 |
EP1794804A2 (de) | 2007-06-13 |
JP2014199940A (ja) | 2014-10-23 |
ATE480009T1 (de) | 2010-09-15 |
JP2008515196A (ja) | 2008-05-08 |
EP2164107A3 (de) | 2010-09-15 |
HK1108060A1 (en) | 2008-04-25 |
JP5899271B2 (ja) | 2016-04-06 |
WO2006086014A2 (en) | 2006-08-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE602005023323D1 (de) | Verfahren zur herstellung von detektoren auf siliziumbasis mit lasermikrostrukturierten oberflächenschichten mit elektronendonatoren | |
Zou et al. | Synthesis and oxygen vacancy related NO2 gas sensing properties of ZnO: Co nanorods arrays gown by a hydrothermal method | |
Buriak | Illuminating silicon surface hydrosilylation: an unexpected plurality of mechanisms | |
ATE445233T1 (de) | Nitrid-halbleiterbauelement mit einem trägersubstrat und verfahren zu seiner herstellung | |
DE502007001732D1 (de) | Solarzellenmarkierverfahren und solarzelle | |
ATE522927T1 (de) | Verfahren zur herstellung einer n-dotierten zone in einem halbleiterwafer und halbleiterbauelement | |
ATE433216T1 (de) | Verfahren zur herstellung von lateralen halbleitervorrichtungen | |
ATE453211T1 (de) | Verfahren zur herstellung eines photovoltaischen elements mit stabilem wirkungsgrad | |
DE602004029486D1 (de) | Grossfläches gan-substrat mit einheitlich geringer versetzungsdichte und herstellungsverfahren dafür | |
JP2007042950A (ja) | エピタキシャル層の品質評価方法、soi層の品質評価方法、シリコンウェーハの製造方法 | |
DE60314640D1 (de) | Methoden zur abscheidung von atomschichten | |
Carey III | Femtosecond-laser microstructuring of silicon for novel optoelectronic devices | |
KR20130083429A (ko) | 주입 및 조사에 의해 기판을 제조하는 방법 | |
CN102623639A (zh) | 一步实现图案化和自修饰界面的有机薄膜晶体管制备方法 | |
Hou et al. | Photoluminescence of monolayer MoS 2 modulated by water/O 2/laser irradiation | |
CN106311681B (zh) | 掩膜版异物清除方法及掩膜版异物清除装置 | |
Lian et al. | Asymmetric response optoelectronic device based on femtosecond-laser-irradiated perovskite | |
ATE504087T1 (de) | Verfahren zur gleichzeitigen rekristallisierung und dotierung von halbleiterschichten und nach diesem verfahren hergestellte halbleiterschichtsysteme | |
Abdelazim et al. | Lateral electrodeposition of MoS2 semiconductor over an insulator | |
JP6785573B2 (ja) | コーティングを有する基板の製造方法、及び、対応するコーティングを有する基板 | |
Moser et al. | Laser processing of GaN-based LEDs with ultraviolet picosecond laser pulses | |
Gandhi | Hyperdoping germanium for SWIR photodetection and high donor activation | |
Abed et al. | Study the effect of CO2 laser annealing on silicon nanostructures | |
Lalic | Light emitting devices based on silicon nanostructures | |
ATE504861T1 (de) | Herstellung von stempeln, masken und schablonen zur herstellung von halbleiterbauelementen |