ATE445233T1 - Nitrid-halbleiterbauelement mit einem trägersubstrat und verfahren zu seiner herstellung - Google Patents

Nitrid-halbleiterbauelement mit einem trägersubstrat und verfahren zu seiner herstellung

Info

Publication number
ATE445233T1
ATE445233T1 AT03703055T AT03703055T ATE445233T1 AT E445233 T1 ATE445233 T1 AT E445233T1 AT 03703055 T AT03703055 T AT 03703055T AT 03703055 T AT03703055 T AT 03703055T AT E445233 T1 ATE445233 T1 AT E445233T1
Authority
AT
Austria
Prior art keywords
nitride semiconductor
semiconductor layers
different material
material substrate
eliminating
Prior art date
Application number
AT03703055T
Other languages
English (en)
Inventor
Masahiko Sano
Mitsuhiro Nonaka
Kazumi Kamada
Masashi Yamamoto
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Application granted granted Critical
Publication of ATE445233T1 publication Critical patent/ATE445233T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Semiconductor Lasers (AREA)
  • Led Device Packages (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT03703055T 2002-01-28 2003-01-27 Nitrid-halbleiterbauelement mit einem trägersubstrat und verfahren zu seiner herstellung ATE445233T1 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2002019192 2002-01-28
JP2002175686 2002-06-17
JP2002195179 2002-07-03
JP2002233866 2002-08-09
JP2002356463 2002-12-09
PCT/JP2003/000757 WO2003065464A1 (fr) 2002-01-28 2003-01-27 Dispositif a semi-conducteur a base de nitrure comprenant un substrat de support, et son procede de realisation

Publications (1)

Publication Number Publication Date
ATE445233T1 true ATE445233T1 (de) 2009-10-15

Family

ID=27617871

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03703055T ATE445233T1 (de) 2002-01-28 2003-01-27 Nitrid-halbleiterbauelement mit einem trägersubstrat und verfahren zu seiner herstellung

Country Status (12)

Country Link
US (4) US6744071B2 (de)
EP (4) EP1471583B1 (de)
JP (2) JP4207781B2 (de)
KR (2) KR100909739B1 (de)
CN (2) CN101383393B (de)
AT (1) ATE445233T1 (de)
AU (1) AU2003207287B2 (de)
CA (2) CA2754097C (de)
DE (1) DE60329576D1 (de)
HK (1) HK1128820A1 (de)
TW (1) TWI278995B (de)
WO (1) WO2003065464A1 (de)

Families Citing this family (477)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7304325B2 (en) * 2000-05-01 2007-12-04 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor light-emitting device
EP1471583B1 (de) * 2002-01-28 2009-10-07 Nichia Corporation Nitrid-halbleiterbauelement mit einem trägersubstrat und verfahren zu seiner herstellung
CN100430456C (zh) * 2002-03-22 2008-11-05 日亚化学工业株式会社 氮化物荧光体,其制造方法及发光装置
US20030189215A1 (en) 2002-04-09 2003-10-09 Jong-Lam Lee Method of fabricating vertical structure leds
EP1503428B1 (de) * 2002-04-25 2011-08-17 Nichia Corporation Lichtemittierendes bauelement mit einer fluoreszenten substanz
US20040140474A1 (en) * 2002-06-25 2004-07-22 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device, method for fabricating the same and method for bonding the same
US6841802B2 (en) * 2002-06-26 2005-01-11 Oriol, Inc. Thin film light emitting diode
KR101030068B1 (ko) * 2002-07-08 2011-04-19 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자의 제조방법 및 질화물 반도체 소자
TWI241728B (en) * 2004-09-01 2005-10-11 Epistar Corp Semiconductor light-emitting device and production method thereof
DE10234977A1 (de) 2002-07-31 2004-02-12 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Dünnschicht-Halbleiterbauelement auf GaN-Basis
KR101095753B1 (ko) * 2002-08-01 2011-12-21 니치아 카가쿠 고교 가부시키가이샤 반도체 발광 소자 및 그 제조 방법과 그것을 이용한 발광장치
US7147653B2 (en) * 2002-08-23 2006-12-12 Lumitex, Inc. Pad like device for use during phototherapy treatment
US6717353B1 (en) * 2002-10-14 2004-04-06 Lumileds Lighting U.S., Llc Phosphor converted light emitting device
MY149573A (en) 2002-10-16 2013-09-13 Nichia Corp Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor
MY142684A (en) 2003-02-26 2010-12-31 Cree Inc Composite white light source and method for fabricating
US20040259279A1 (en) * 2003-04-15 2004-12-23 Erchak Alexei A. Light emitting device methods
US6831302B2 (en) * 2003-04-15 2004-12-14 Luminus Devices, Inc. Light emitting devices with improved extraction efficiency
US7084434B2 (en) * 2003-04-15 2006-08-01 Luminus Devices, Inc. Uniform color phosphor-coated light-emitting diode
US7083993B2 (en) * 2003-04-15 2006-08-01 Luminus Devices, Inc. Methods of making multi-layer light emitting devices
US7074631B2 (en) * 2003-04-15 2006-07-11 Luminus Devices, Inc. Light emitting device methods
US7211831B2 (en) * 2003-04-15 2007-05-01 Luminus Devices, Inc. Light emitting device with patterned surfaces
US7166871B2 (en) * 2003-04-15 2007-01-23 Luminus Devices, Inc. Light emitting systems
US7105861B2 (en) * 2003-04-15 2006-09-12 Luminus Devices, Inc. Electronic device contact structures
US7274043B2 (en) * 2003-04-15 2007-09-25 Luminus Devices, Inc. Light emitting diode systems
US7521854B2 (en) * 2003-04-15 2009-04-21 Luminus Devices, Inc. Patterned light emitting devices and extraction efficiencies related to the same
US7667238B2 (en) * 2003-04-15 2010-02-23 Luminus Devices, Inc. Light emitting devices for liquid crystal displays
US7262550B2 (en) * 2003-04-15 2007-08-28 Luminus Devices, Inc. Light emitting diode utilizing a physical pattern
US7098589B2 (en) 2003-04-15 2006-08-29 Luminus Devices, Inc. Light emitting devices with high light collimation
JP2006525682A (ja) 2003-04-30 2006-11-09 クリー　インコーポレイテッド 高出力固体発光素子パッケージ
US7005679B2 (en) 2003-05-01 2006-02-28 Cree, Inc. Multiple component solid state white light
KR101034055B1 (ko) 2003-07-18 2011-05-12 엘지이노텍 주식회사 발광 다이오드 및 그 제조방법
US7455787B2 (en) * 2003-08-01 2008-11-25 Sunpower Corporation Etching of solar cell materials
JP4218597B2 (ja) * 2003-08-08 2009-02-04 住友電気工業株式会社 半導体発光素子の製造方法
JP2005064188A (ja) * 2003-08-11 2005-03-10 Sumitomo Electric Ind Ltd 基板の回収方法および再生方法、ならびに半導体ウエハの製造方法
WO2005022654A2 (en) 2003-08-28 2005-03-10 Matsushita Electric Industrial Co.,Ltd. Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device
JP2005117020A (ja) * 2003-09-16 2005-04-28 Stanley Electric Co Ltd 窒化ガリウム系化合物半導体素子とその製造方法
US7341880B2 (en) * 2003-09-17 2008-03-11 Luminus Devices, Inc. Light emitting device processes
US7344903B2 (en) * 2003-09-17 2008-03-18 Luminus Devices, Inc. Light emitting device processes
JP4378242B2 (ja) * 2003-09-25 2009-12-02 株式会社小糸製作所 車両用灯具
US8604497B2 (en) 2003-09-26 2013-12-10 Osram Opto Semiconductors Gmbh Radiation-emitting thin-film semiconductor chip
EP1521312A3 (de) * 2003-09-30 2008-01-16 Osram Opto Semiconductors GmbH Optoelektronisches Bauelement mit einem metallisierten Träger
JP2005129825A (ja) * 2003-10-27 2005-05-19 Sumitomo Chemical Co Ltd 化合物半導体基板の製造方法
FR2862424B1 (fr) * 2003-11-18 2006-10-20 Valeo Electronique Sys Liaison Dispositif de refroidissement d'un composant electrique et procede de fabrication de ce dispositif
WO2005064666A1 (en) 2003-12-09 2005-07-14 The Regents Of The University Of California Highly efficient gallium nitride based light emitting diodes via surface roughening
US7450311B2 (en) 2003-12-12 2008-11-11 Luminus Devices, Inc. Optical display systems and methods
KR100585919B1 (ko) * 2004-01-15 2006-06-01 학교법인 포항공과대학교 질화갈륨계 ⅲ­ⅴ족 화합물 반도체 소자 및 그 제조방법
US7339198B2 (en) * 2004-01-16 2008-03-04 Yu-Nung Shen Light-emitting diode chip package body and packaging method thereof
US7569863B2 (en) * 2004-02-19 2009-08-04 Panasonic Corporation Semiconductor light emitting device
JP4868709B2 (ja) 2004-03-09 2012-02-01 三洋電機株式会社 発光素子
TWI287880B (en) * 2004-03-18 2007-10-01 Showa Denko Kk Group III nitride semiconductor light-emitting device and method of producing the same
US20050205883A1 (en) * 2004-03-19 2005-09-22 Wierer Jonathan J Jr Photonic crystal light emitting device
US7327078B2 (en) * 2004-03-30 2008-02-05 Lumination Llc LED illumination device with layered phosphor pattern
JP4653804B2 (ja) * 2004-04-29 2011-03-16 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 発光半導体チップの製造方法および半導体チップ
US7791061B2 (en) * 2004-05-18 2010-09-07 Cree, Inc. External extraction light emitting diode based upon crystallographic faceted surfaces
US8294166B2 (en) 2006-12-11 2012-10-23 The Regents Of The University Of California Transparent light emitting diodes
JP4978877B2 (ja) * 2004-06-10 2012-07-18 信越半導体株式会社 発光素子の製造方法及び発光素子
JP5234149B2 (ja) * 2004-06-24 2013-07-10 豊田合成株式会社 発光素子の製造方法
US7795623B2 (en) 2004-06-30 2010-09-14 Cree, Inc. Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures
US7534633B2 (en) 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
JP4597796B2 (ja) * 2004-07-08 2010-12-15 シャープ株式会社 窒化物系化合物半導体発光素子およびその製造方法
US20090023239A1 (en) * 2004-07-22 2009-01-22 Luminus Devices, Inc. Light emitting device processes
US20060038188A1 (en) 2004-08-20 2006-02-23 Erchak Alexei A Light emitting diode systems
US20060043400A1 (en) * 2004-08-31 2006-03-02 Erchak Alexei A Polarized light emitting device
JP2006100787A (ja) * 2004-08-31 2006-04-13 Toyoda Gosei Co Ltd 発光装置および発光素子
US8174037B2 (en) * 2004-09-22 2012-05-08 Cree, Inc. High efficiency group III nitride LED with lenticular surface
JP4371029B2 (ja) * 2004-09-29 2009-11-25 サンケン電気株式会社 半導体発光素子およびその製造方法
US7262498B2 (en) * 2004-10-19 2007-08-28 Hewlett-Packard Development Company, L.P. Assembly with a ring and bonding pads formed of a same material on a substrate
US7733002B2 (en) * 2004-10-19 2010-06-08 Nichia Corporation Semiconductor light emitting device provided with an alkaline earth metal boric halide phosphor for luminescence conversion
US7679097B2 (en) 2004-10-21 2010-03-16 Nichia Corporation Semiconductor light emitting device and method for manufacturing the same
EP1810351B1 (de) * 2004-10-22 2013-08-07 Seoul Opto Device Co., Ltd. Gan-halbleiter-verbundleuchtelement
JP2006128227A (ja) * 2004-10-26 2006-05-18 Mitsubishi Cable Ind Ltd 窒化物半導体発光素子
US20060157101A1 (en) * 2004-10-29 2006-07-20 Sakamoto Jeff S System and method for fabrication of high-efficiency durable thermoelectric devices
US7772609B2 (en) * 2004-10-29 2010-08-10 Ledengin, Inc. (Cayman) LED package with structure and materials for high heat dissipation
US7670872B2 (en) * 2004-10-29 2010-03-02 LED Engin, Inc. (Cayman) Method of manufacturing ceramic LED packages
US8134292B2 (en) * 2004-10-29 2012-03-13 Ledengin, Inc. Light emitting device with a thermal insulating and refractive index matching material
US8816369B2 (en) 2004-10-29 2014-08-26 Led Engin, Inc. LED packages with mushroom shaped lenses and methods of manufacturing LED light-emitting devices
US8324641B2 (en) 2007-06-29 2012-12-04 Ledengin, Inc. Matrix material including an embedded dispersion of beads for a light-emitting device
US9929326B2 (en) 2004-10-29 2018-03-27 Ledengin, Inc. LED package having mushroom-shaped lens with volume diffuser
JP4906256B2 (ja) * 2004-11-10 2012-03-28 株式会社沖データ 半導体複合装置の製造方法
KR101187746B1 (ko) * 2004-11-18 2012-10-05 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 조명기 및 이를 제조하는 방법
US7180066B2 (en) * 2004-11-24 2007-02-20 Chang-Hua Qiu Infrared detector composed of group III-V nitrides
KR100590775B1 (ko) * 2004-12-08 2006-06-19 한국전자통신연구원 실리콘 발광 소자
JP4099673B2 (ja) * 2004-12-21 2008-06-11 セイコーエプソン株式会社 半導体装置
KR100657941B1 (ko) * 2004-12-31 2006-12-14 삼성전기주식회사 요철 구조를 포함하는 발광 소자 및 그 제조 방법
US7186580B2 (en) * 2005-01-11 2007-03-06 Semileds Corporation Light emitting diodes (LEDs) with improved light extraction by roughening
US20060151801A1 (en) * 2005-01-11 2006-07-13 Doan Trung T Light emitting diode with thermo-electric cooler
US9130114B2 (en) 2005-01-11 2015-09-08 SemiLEDs Optoelectronics Co., Ltd. Vertical light emitting diode (VLED) dice having confinement layers with roughened surfaces and methods of fabrication
US7413918B2 (en) * 2005-01-11 2008-08-19 Semileds Corporation Method of making a light emitting diode
US8802465B2 (en) 2005-01-11 2014-08-12 SemiLEDs Optoelectronics Co., Ltd. Method for handling a semiconductor wafer assembly
US8871547B2 (en) 2005-01-11 2014-10-28 SemiLEDs Optoelectronics Co., Ltd. Method for fabricating vertical light emitting diode (VLED) structure using a laser pulse to remove a carrier substrate
US7378288B2 (en) * 2005-01-11 2008-05-27 Semileds Corporation Systems and methods for producing light emitting diode array
US7432119B2 (en) * 2005-01-11 2008-10-07 Semileds Corporation Light emitting diode with conducting metal substrate
US7195944B2 (en) * 2005-01-11 2007-03-27 Semileds Corporation Systems and methods for producing white-light emitting diodes
US7646033B2 (en) * 2005-01-11 2010-01-12 Semileds Corporation Systems and methods for producing white-light light emitting diodes
US7897420B2 (en) * 2005-01-11 2011-03-01 SemiLEDs Optoelectronics Co., Ltd. Light emitting diodes (LEDs) with improved light extraction by roughening
US7563625B2 (en) * 2005-01-11 2009-07-21 SemiLEDs Optoelectronics Co., Ltd. Method of making light-emitting diodes (LEDs) with improved light extraction by roughening
US7524686B2 (en) * 2005-01-11 2009-04-28 Semileds Corporation Method of making light emitting diodes (LEDs) with improved light extraction by roughening
US7473936B2 (en) * 2005-01-11 2009-01-06 Semileds Corporation Light emitting diodes (LEDs) with improved light extraction by roughening
US20060154393A1 (en) * 2005-01-11 2006-07-13 Doan Trung T Systems and methods for removing operating heat from a light emitting diode
US8680534B2 (en) 2005-01-11 2014-03-25 Semileds Corporation Vertical light emitting diodes (LED) having metal substrate and spin coated phosphor layer for producing white light
TWI247441B (en) * 2005-01-21 2006-01-11 United Epitaxy Co Ltd Light emitting diode and fabricating method thereof
US7335920B2 (en) * 2005-01-24 2008-02-26 Cree, Inc. LED with current confinement structure and surface roughening
US7932111B2 (en) * 2005-02-23 2011-04-26 Cree, Inc. Substrate removal process for high light extraction LEDs
US20070045640A1 (en) * 2005-08-23 2007-03-01 Erchak Alexei A Light emitting devices for liquid crystal displays
US20060204865A1 (en) * 2005-03-08 2006-09-14 Luminus Devices, Inc. Patterned light-emitting devices
JP2006253172A (ja) * 2005-03-08 2006-09-21 Toshiba Corp 半導体発光素子、半導体発光装置及び半導体発光素子の製造方法
CN100449806C (zh) * 2005-04-12 2009-01-07 夏普株式会社 氮化物基半导体发光装置及其制造方法
KR100665173B1 (ko) * 2005-04-26 2007-01-09 삼성전기주식회사 질화물층의 제조방법 및 이를 이용한 수직구조 질화물반도체 발광소자의 제조방법
TWI260798B (en) * 2005-05-02 2006-08-21 Ind Tech Res Inst Highly heat-dissipating light-emitting diode
TWI260799B (en) * 2005-05-06 2006-08-21 Harvatek Corp Multi-wavelength white light light-emitting diode
US9153645B2 (en) 2005-05-17 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US8324660B2 (en) 2005-05-17 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
JP2006324324A (ja) * 2005-05-17 2006-11-30 Sumitomo Electric Ind Ltd 発光装置、発光装置の製造方法および窒化物半導体基板
KR101166922B1 (ko) * 2005-05-27 2012-07-19 엘지이노텍 주식회사 발광 다이오드의 제조 방법
US20060267043A1 (en) * 2005-05-27 2006-11-30 Emerson David T Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
CN100372137C (zh) * 2005-05-27 2008-02-27 晶能光电（江西）有限公司 具有上下电极结构的铟镓铝氮发光器件及其制造方法
KR20060131534A (ko) * 2005-06-16 2006-12-20 삼성전기주식회사 요철 구조를 포함하는 발광 소자 및 그 제조 방법
KR20060131327A (ko) * 2005-06-16 2006-12-20 엘지전자 주식회사 발광 다이오드의 제조 방법
KR20070006027A (ko) * 2005-07-07 2007-01-11 주식회사 엘지화학 확산 방지막이 구비된 발광다이오드 소자 및 이의 제조방법
US8674375B2 (en) * 2005-07-21 2014-03-18 Cree, Inc. Roughened high refractive index layer/LED for high light extraction
WO2007014294A2 (en) 2005-07-26 2007-02-01 Amberwave Systems Corporation Solutions integrated circuit integration of alternative active area materials
US8163580B2 (en) 2005-08-10 2012-04-24 Philips Lumileds Lighting Company Llc Multiple die LED and lens optical system
CN1921156A (zh) * 2005-08-26 2007-02-28 鸿富锦精密工业（深圳）有限公司 发光二极体光源模组及其制造方法
US7638842B2 (en) 2005-09-07 2009-12-29 Amberwave Systems Corporation Lattice-mismatched semiconductor structures on insulators
US20070054467A1 (en) * 2005-09-07 2007-03-08 Amberwave Systems Corporation Methods for integrating lattice-mismatched semiconductor structure on insulators
DE102006023685A1 (de) * 2005-09-29 2007-04-05 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
SG130975A1 (en) * 2005-09-29 2007-04-26 Tinggi Tech Private Ltd Fabrication of semiconductor devices for light emission
DE102005061346A1 (de) * 2005-09-30 2007-04-05 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
JP5032017B2 (ja) * 2005-10-28 2012-09-26 株式会社東芝 半導体発光素子及びその製造方法並びに半導体発光装置
US7598531B2 (en) * 2005-11-18 2009-10-06 Luminus Devices, Inc. Electronic device contact structures
WO2007060931A1 (ja) * 2005-11-22 2007-05-31 Rohm Co., Ltd. 窒化物半導体素子
KR100640497B1 (ko) * 2005-11-24 2006-11-01 삼성전기주식회사 수직 구조 질화갈륨계 발광다이오드 소자
US8729580B2 (en) * 2005-12-06 2014-05-20 Toshiba Techno Center, Inc. Light emitter with metal-oxide coating
KR100730072B1 (ko) * 2005-12-06 2007-06-20 삼성전기주식회사 수직구조 질화갈륨계 발광 다이오드 소자 및 그 제조방법
WO2007073496A2 (en) 2005-12-22 2007-06-28 Cree Led Lighting Solutions, Inc. Lighting device
JP2009530798A (ja) 2006-01-05 2009-08-27 イルミテックス， インコーポレイテッド Ｌｅｄから光を導くための独立した光学デバイス
WO2007089371A2 (en) * 2006-01-31 2007-08-09 Osram Sylvania Inc. Rare earth-activated aluminum nitride powders and method of making
KR100735488B1 (ko) * 2006-02-03 2007-07-04 삼성전기주식회사 질화갈륨계 발광다이오드 소자의 제조방법
US7804148B2 (en) * 2006-02-16 2010-09-28 International Business Machines Corporation Opto-thermal mask including aligned thermal dissipative layer, reflective layer and transparent capping layer
US7928462B2 (en) 2006-02-16 2011-04-19 Lg Electronics Inc. Light emitting device having vertical structure, package thereof and method for manufacturing the same
JP2007273975A (ja) * 2006-03-10 2007-10-18 Matsushita Electric Works Ltd 発光素子
US7696523B2 (en) 2006-03-14 2010-04-13 Lg Electronics Inc. Light emitting device having vertical structure and method for manufacturing the same
NL2000033C1 (nl) * 2006-03-20 2007-09-21 Univ Eindhoven Tech Inrichting voor het omzetten van elektromagnetische stralingsenergie in elektrische energie en werkwijze ter vervaardiging van een dergelijke inrichting.
KR101198763B1 (ko) * 2006-03-23 2012-11-12 엘지이노텍 주식회사 기둥 구조와 이를 이용한 발광 소자 및 그 형성방법
JP5153082B2 (ja) * 2006-03-24 2013-02-27 三洋電機株式会社 半導体素子
WO2007112066A2 (en) 2006-03-24 2007-10-04 Amberwave Systems Corporation Lattice-mismatched semiconductor structures and related methods for device fabrication
KR100764432B1 (ko) 2006-04-05 2007-10-05 삼성전기주식회사 아노다이징 절연 층을 갖는 엘이디 패키지 및 그 제조방법
DE102007002416A1 (de) 2006-04-13 2007-10-18 Osram Opto Semiconductors Gmbh Strahlungsemittierender Körper und Verfahren zur Herstellung eines strahlungsemittierenden Körpers
TWI301679B (en) * 2006-04-14 2008-10-01 High Power Optoelectronics Inc Semiconductor light emitting device and method of fabricating the same
CN102800786B (zh) 2006-04-24 2015-09-16 克利公司 发光二极管和显示元件
KR100778820B1 (ko) * 2006-04-25 2007-11-22 포항공과대학교 산학협력단 금속 전극 형성 방법 및 반도체 발광 소자의 제조 방법 및질화물계 화합물 반도체 발광 소자
JP2008053685A (ja) * 2006-08-23 2008-03-06 Samsung Electro Mech Co Ltd 垂直構造窒化ガリウム系発光ダイオード素子及びその製造方法
JP5118044B2 (ja) 2006-08-31 2013-01-16 信越半導体株式会社 半導体基板並びに電極の形成方法及び太陽電池の製造方法
US8173551B2 (en) 2006-09-07 2012-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. Defect reduction using aspect ratio trapping
US7442599B2 (en) * 2006-09-15 2008-10-28 Sharp Laboratories Of America, Inc. Silicon/germanium superlattice thermal sensor
WO2008039534A2 (en) 2006-09-27 2008-04-03 Amberwave Systems Corporation Quantum tunneling devices and circuits with lattice- mismatched semiconductor structures
WO2008039495A1 (en) 2006-09-27 2008-04-03 Amberwave Systems Corporation Tri-gate field-effect transistors formed by aspect ratio trapping
US7789531B2 (en) 2006-10-02 2010-09-07 Illumitex, Inc. LED system and method
US8941141B2 (en) * 2006-10-17 2015-01-27 Epistar Corporation Light-emitting device
US8502263B2 (en) 2006-10-19 2013-08-06 Taiwan Semiconductor Manufacturing Company, Ltd. Light-emitter-based devices with lattice-mismatched semiconductor structures
US7518139B2 (en) * 2006-10-31 2009-04-14 Lehigh University Gallium nitride-based device and method
US20080132036A1 (en) * 2006-12-04 2008-06-05 Chiu Chung Yang Method for subdividing wafer into LEDs
US8497161B2 (en) * 2006-12-04 2013-07-30 Chiu Chung Yang Method for providing an LED chip with a peripheral protective film before cutting the same from a wafer
US8110838B2 (en) * 2006-12-08 2012-02-07 Luminus Devices, Inc. Spatial localization of light-generating portions in LEDs
US8030641B2 (en) * 2006-12-19 2011-10-04 Lehigh University Graded in content gallium nitride-based device and method
WO2008133756A1 (en) * 2006-12-24 2008-11-06 Lehigh University Efficient light extraction method and device
WO2009082404A1 (en) * 2006-12-24 2009-07-02 Lehigh University Staggered composition quantum well method and device
EP2140195A1 (de) * 2007-01-25 2010-01-06 Ralf Violonchi Mikrooptische strahlformungsanordnung zur bildprojektion einer divergenten isotropen lichtpunktewolke, vornehmlich für den entertainmentbereich
US8080833B2 (en) * 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
JP5151166B2 (ja) * 2007-01-31 2013-02-27 日亜化学工業株式会社 半導体発光素子
DE102007020291A1 (de) * 2007-01-31 2008-08-07 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung einer Kontaktstruktur für einen derartigen Chip
KR100887139B1 (ko) * 2007-02-12 2009-03-04 삼성전기주식회사 질화물 반도체 발광소자 및 제조방법
KR101364167B1 (ko) * 2007-02-15 2014-02-18 서울바이오시스 주식회사 수직형 발광 다이오드 및 그 제조방법
US20080197369A1 (en) * 2007-02-20 2008-08-21 Cree, Inc. Double flip semiconductor device and method for fabrication
US7951625B2 (en) * 2007-02-21 2011-05-31 Panasonic Corporation Semiconductor light emitting element and method for manufacturing semiconductor light emitting device
US8110425B2 (en) 2007-03-20 2012-02-07 Luminus Devices, Inc. Laser liftoff structure and related methods
US9508890B2 (en) 2007-04-09 2016-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Photovoltaics on silicon
US8304805B2 (en) 2009-01-09 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
US8237151B2 (en) 2009-01-09 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Diode-based devices and methods for making the same
US7825328B2 (en) 2007-04-09 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride-based multi-junction solar cell modules and methods for making the same
US9484499B2 (en) 2007-04-20 2016-11-01 Cree, Inc. Transparent ohmic contacts on light emitting diodes with carrier substrates
DE102007029370A1 (de) * 2007-05-04 2008-11-06 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips
US8148733B2 (en) 2007-06-12 2012-04-03 SemiLEDs Optoelectronics Co., Ltd. Vertical LED with current guiding structure
US8546818B2 (en) 2007-06-12 2013-10-01 SemiLEDs Optoelectronics Co., Ltd. Vertical LED with current-guiding structure
US7759670B2 (en) * 2007-06-12 2010-07-20 SemiLEDs Optoelectronics Co., Ltd. Vertical LED with current guiding structure
US8329541B2 (en) 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
KR100872717B1 (ko) * 2007-06-22 2008-12-05 엘지이노텍 주식회사 발광 소자 및 그 제조방법
JP5493252B2 (ja) * 2007-06-28 2014-05-14 日亜化学工業株式会社 半導体発光素子
US8410510B2 (en) * 2007-07-03 2013-04-02 Nichia Corporation Semiconductor light emitting device and method for fabricating the same
JP5211887B2 (ja) * 2007-07-03 2013-06-12 日亜化学工業株式会社 半導体発光素子およびその製造方法
KR101289230B1 (ko) * 2007-07-23 2013-07-29 엘지이노텍 주식회사 발광 소자 및 그 제조방법
US8441018B2 (en) 2007-08-16 2013-05-14 The Trustees Of Columbia University In The City Of New York Direct bandgap substrates and methods of making and using
US11114594B2 (en) 2007-08-24 2021-09-07 Creeled, Inc. Light emitting device packages using light scattering particles of different size
CN101884117B (zh) 2007-09-07 2013-10-02 台湾积体电路制造股份有限公司 多结太阳能电池
KR101438808B1 (ko) 2007-10-08 2014-09-05 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR100900288B1 (ko) 2007-10-29 2009-05-29 엘지전자 주식회사 발광 소자
US10256385B2 (en) * 2007-10-31 2019-04-09 Cree, Inc. Light emitting die (LED) packages and related methods
US9461201B2 (en) 2007-11-14 2016-10-04 Cree, Inc. Light emitting diode dielectric mirror
US7915629B2 (en) 2008-12-08 2011-03-29 Cree, Inc. Composite high reflectivity layer
US8368100B2 (en) * 2007-11-14 2013-02-05 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same
US7846751B2 (en) * 2007-11-19 2010-12-07 Wang Nang Wang LED chip thermal management and fabrication methods
WO2009075753A2 (en) * 2007-12-06 2009-06-18 Paul Panaccione Chip-scale packaged light-emitting devices
US9431589B2 (en) 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
DE102007061419A1 (de) * 2007-12-20 2009-06-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Transparente Kunststofffolie zum Abschirmen elektromagnetischer Wellen und Verfahren zum Herstellen einer solchen Kunststofffolie
DE102008006364A1 (de) * 2008-01-28 2009-07-30 Zeller, Philipp, Dr. Beleuchtungs- und Anzeigevorrichtung
DE102008006745B3 (de) * 2008-01-30 2009-10-08 Siltronic Ag Verfahren zur Herstellung einer Halbleiterstruktur
US8304660B2 (en) * 2008-02-07 2012-11-06 National Taiwan University Fully reflective and highly thermoconductive electronic module and method of manufacturing the same
EP2240968A1 (de) 2008-02-08 2010-10-20 Illumitex, Inc. System und verfahren zur bildung einer emitterschicht
DE102008027045A1 (de) * 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Halbleiterleuchtdiode und Verfahren zur Herstellung einer Halbleiterleuchtdiode
DE102008013900A1 (de) * 2008-03-12 2009-09-17 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Vielzahl von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
KR20110006652A (ko) * 2008-03-25 2011-01-20 라티스 파워(지앙시) 코포레이션 양면 패시베이션을 갖는 반도체 발광 소자
KR101438818B1 (ko) * 2008-04-01 2014-09-05 엘지이노텍 주식회사 발광다이오드 소자
EP2280426B1 (de) * 2008-04-16 2017-07-05 LG Innotek Co., Ltd. Leuchtbauelement
KR101007099B1 (ko) 2008-04-21 2011-01-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
US8664747B2 (en) * 2008-04-28 2014-03-04 Toshiba Techno Center Inc. Trenched substrate for crystal growth and wafer bonding
US8642421B2 (en) 2008-05-15 2014-02-04 SemiLEDs Optoelectronics Co., Ltd. Light-emitting diode device structure with SixNy layer
US8129237B1 (en) * 2008-05-15 2012-03-06 SemiLEDs Optoelectronics Co., Ltd. Vertical light-emitting diode device structure with SixNy layer
KR20090119596A (ko) 2008-05-16 2009-11-19 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
US8183667B2 (en) 2008-06-03 2012-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth of crystalline material
DE102008050538B4 (de) * 2008-06-06 2022-10-06 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
US8274097B2 (en) 2008-07-01 2012-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Reduction of edge effects from aspect ratio trapping
DE102009025015A1 (de) * 2008-07-08 2010-02-18 Seoul Opto Device Co. Ltd., Ansan Lichtemittierende Vorrichtung und Verfahren zu ihrer Herstellung
KR20100008123A (ko) * 2008-07-15 2010-01-25 고려대학교 산학협력단 이중 히트 씽크층으로 구성된 지지대를 갖춘 고성능수직구조의 반도체 발광소자
US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
KR101534848B1 (ko) * 2008-07-21 2015-07-27 엘지이노텍 주식회사 발광 다이오드 및 그 제조방법. 그리고 발광 소자 및 그발광 소자 제조방법
DE102008035110A1 (de) 2008-07-28 2010-02-11 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
TWI495141B (zh) * 2008-08-01 2015-08-01 Epistar Corp 晶圓發光結構之形成方法及光源產生裝置
KR101428088B1 (ko) * 2008-08-12 2014-08-07 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
DE102008038750A1 (de) * 2008-08-12 2010-02-18 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
CN102067345A (zh) * 2008-08-19 2011-05-18 晶能光电（江西）有限公司 用于制备具有双面钝化的半导体发光器件的方法
US20100072515A1 (en) 2008-09-19 2010-03-25 Amberwave Systems Corporation Fabrication and structures of crystalline material
CN102160145B (zh) 2008-09-19 2013-08-21 台湾积体电路制造股份有限公司 通过外延层过成长的元件形成
US8253211B2 (en) 2008-09-24 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor sensor structures with reduced dislocation defect densities
JP5123269B2 (ja) 2008-09-30 2013-01-23 ソウル オプト デバイス カンパニー リミテッド 発光素子及びその製造方法
TW201015743A (en) * 2008-10-01 2010-04-16 Formosa Epitaxy Inc LED and manufacturing method thereof
US8075165B2 (en) * 2008-10-14 2011-12-13 Ledengin, Inc. Total internal reflection lens and mechanical retention and locating device
KR101007117B1 (ko) 2008-10-16 2011-01-11 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
US20100117106A1 (en) * 2008-11-07 2010-05-13 Ledengin, Inc. Led with light-conversion layer
KR100992776B1 (ko) 2008-11-14 2010-11-05 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
JP2010141225A (ja) * 2008-12-15 2010-06-24 Hitachi Cable Ltd 半導体発光素子
US8507300B2 (en) * 2008-12-24 2013-08-13 Ledengin, Inc. Light-emitting diode with light-conversion layer
JP2010171376A (ja) * 2008-12-26 2010-08-05 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
KR101064082B1 (ko) * 2009-01-21 2011-09-08 엘지이노텍 주식회사 발광 소자
KR100974776B1 (ko) * 2009-02-10 2010-08-06 엘지이노텍 주식회사 발광 소자
KR100992749B1 (ko) * 2009-02-16 2010-11-05 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR100992657B1 (ko) * 2009-02-16 2010-11-05 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR101014136B1 (ko) * 2009-02-17 2011-02-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
JP2010192835A (ja) * 2009-02-20 2010-09-02 Showa Denko Kk 発光ダイオード及びその製造方法、並びに発光ダイオードランプ
KR101064091B1 (ko) * 2009-02-23 2011-09-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR100974784B1 (ko) * 2009-03-10 2010-08-06 엘지이노텍 주식회사 발광 소자 및 그 제조방법
KR101550922B1 (ko) * 2009-03-10 2015-09-07 엘지이노텍 주식회사 발광 소자
KR101040012B1 (ko) * 2009-03-16 2011-06-08 엘지이노텍 주식회사 반도체 소자 제조방법
JP5705207B2 (ja) 2009-04-02 2015-04-22 台湾積體電路製造股▲ふん▼有限公司Ｔａｉｗａｎ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｍａｎｕｆａｃｔｕｒｉｎｇ Ｃｏｍｐａｎｙ，Ｌｔｄ． 結晶物質の非極性面から形成される装置とその製作方法
US8529102B2 (en) * 2009-04-06 2013-09-10 Cree, Inc. Reflector system for lighting device
US7985000B2 (en) * 2009-04-08 2011-07-26 Ledengin, Inc. Lighting apparatus having multiple light-emitting diodes with individual light-conversion layers
CN101894901B (zh) 2009-04-08 2013-11-20 硅谷光擎 用于多个发光二极管的封装
US8598793B2 (en) 2011-05-12 2013-12-03 Ledengin, Inc. Tuning of emitter with multiple LEDs to a single color bin
JP2010258296A (ja) * 2009-04-27 2010-11-11 Renesas Electronics Corp 窒化物系半導体光素子およびその製造方法
KR100999726B1 (ko) * 2009-05-04 2010-12-08 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR100986544B1 (ko) * 2009-06-10 2010-10-07 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
US8207547B2 (en) 2009-06-10 2012-06-26 Brudgelux, Inc. Thin-film LED with P and N contacts electrically isolated from the substrate
US20100327300A1 (en) * 2009-06-25 2010-12-30 Koninklijke Philips Electronics N.V. Contact for a semiconductor light emitting device
DE102009033686A1 (de) * 2009-07-17 2011-01-20 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines anorganischen optoelektronischen Halbleiterbauteils
KR101007140B1 (ko) 2009-07-28 2011-01-10 엘지이노텍 주식회사 발광 소자
JP5359662B2 (ja) * 2009-08-03 2013-12-04 日亜化学工業株式会社 発光装置及びその製造方法
JP5493549B2 (ja) * 2009-07-30 2014-05-14 日亜化学工業株式会社 発光装置及びその製造方法
EP2461379B1 (de) 2009-07-31 2017-03-01 Denka Company Limited Wafer für led-einnbau, verfahren zu seiner herstellung, und led-einbau-struktur unter seiner verwendung
TW201104913A (en) * 2009-07-31 2011-02-01 Tekcore Co Ltd Vertical light-emitting diode and manufacture method thereof
JP2011044482A (ja) * 2009-08-19 2011-03-03 Toshiba Corp 発光素子
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
TWI405409B (zh) * 2009-08-27 2013-08-11 Novatek Microelectronics Corp 低電壓差動訊號輸出級
JP5187854B2 (ja) * 2009-08-28 2013-04-24 シャープ株式会社 窒化物半導体発光素子
US9362459B2 (en) * 2009-09-02 2016-06-07 United States Department Of Energy High reflectivity mirrors and method for making same
CN102024885A (zh) * 2009-09-10 2011-04-20 鸿富锦精密工业（深圳）有限公司 氮化物半导体发光元件
EP2480816A1 (de) 2009-09-25 2012-08-01 Cree, Inc. Beleuchtungsvorrichtung mit geringem blendeffekt und hoher lichtstärkenuniformität
US8368995B2 (en) 2009-10-13 2013-02-05 Skorpios Technologies, Inc. Method and system for hybrid integration of an opto-electronic integrated circuit
US8559470B2 (en) 2009-10-13 2013-10-15 Skorpios Technologies, Inc. Method and system for hybrid integration of a tunable laser and a phase modulator
US9316785B2 (en) 2013-10-09 2016-04-19 Skorpios Technologies, Inc. Integration of an unprocessed, direct-bandgap chip into a silicon photonic device
US8630326B2 (en) 2009-10-13 2014-01-14 Skorpios Technologies, Inc. Method and system of heterogeneous substrate bonding for photonic integration
US8605766B2 (en) 2009-10-13 2013-12-10 Skorpios Technologies, Inc. Method and system for hybrid integration of a tunable laser and a mach zehnder modulator
US8615025B2 (en) * 2009-10-13 2013-12-24 Skorpios Technologies, Inc. Method and system for hybrid integration of a tunable laser
US8611388B2 (en) * 2009-10-13 2013-12-17 Skorpios Technologies, Inc. Method and system for heterogeneous substrate bonding of waveguide receivers
US9923105B2 (en) 2013-10-09 2018-03-20 Skorpios Technologies, Inc. Processing of a direct-bandgap chip after bonding to a silicon photonic device
US8867578B2 (en) 2009-10-13 2014-10-21 Skorpios Technologies, Inc. Method and system for hybrid integration of a tunable laser for a cable TV transmitter
US11181688B2 (en) 2009-10-13 2021-11-23 Skorpios Technologies, Inc. Integration of an unprocessed, direct-bandgap chip into a silicon photonic device
KR101081193B1 (ko) * 2009-10-15 2011-11-07 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR101072034B1 (ko) * 2009-10-15 2011-10-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR101014013B1 (ko) * 2009-10-15 2011-02-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR100986336B1 (ko) * 2009-10-22 2010-10-08 엘지이노텍 주식회사 발광소자, 발광소자 제조방법 및 발광소자 패키지
US9435493B2 (en) * 2009-10-27 2016-09-06 Cree, Inc. Hybrid reflector system for lighting device
TWI412161B (zh) * 2009-11-06 2013-10-11 Semileds Optoelectronics Co 發光二極體裝置
US8963178B2 (en) 2009-11-13 2015-02-24 Seoul Viosys Co., Ltd. Light emitting diode chip having distributed bragg reflector and method of fabricating the same
TWI531088B (zh) 2009-11-13 2016-04-21 首爾偉傲世有限公司 具有分散式布拉格反射器的發光二極體晶片
US8525221B2 (en) 2009-11-25 2013-09-03 Toshiba Techno Center, Inc. LED with improved injection efficiency
KR100986374B1 (ko) 2009-12-09 2010-10-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
EP2660883B1 (de) * 2009-12-09 2019-03-27 LG Innotek Co., Ltd. Lichtemittierende Vorrichtung, Herstellungsverfahren für die lichtemittierende Vorrichtung, Gehäuse für lichtemittierende Vorrichtung und Beleuchtungssystem
US8303141B2 (en) * 2009-12-17 2012-11-06 Ledengin, Inc. Total internal reflection lens with integrated lamp cover
JP4803302B2 (ja) * 2009-12-17 2011-10-26 三菱化学株式会社 窒化物半導体発光素子
DE102009059887A1 (de) * 2009-12-21 2011-06-22 OSRAM Opto Semiconductors GmbH, 93055 Optoelektronischer Halbleiterchip
CN102110755A (zh) * 2009-12-25 2011-06-29 鸿富锦精密工业（深圳）有限公司 发光二极管
DE102009060747A1 (de) 2009-12-30 2011-07-07 OSRAM Opto Semiconductors GmbH, 93055 Halbleiterchip
KR101039904B1 (ko) 2010-01-15 2011-06-09 엘지이노텍 주식회사 발광 소자, 발광 소자 패키지 및 발광 소자 제조방법
KR101047647B1 (ko) * 2010-01-15 2011-07-07 엘지이노텍 주식회사 발광 소자, 발광 소자 패키지 및 발광 소자 제조방법
KR100986318B1 (ko) 2010-02-09 2010-10-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR100969100B1 (ko) * 2010-02-12 2010-07-09 엘지이노텍 주식회사 발광소자, 발광소자의 제조방법 및 발광소자 패키지
KR100999733B1 (ko) * 2010-02-18 2010-12-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
US8338317B2 (en) 2011-04-06 2012-12-25 Infineon Technologies Ag Method for processing a semiconductor wafer or die, and particle deposition device
JP5284300B2 (ja) 2010-03-10 2013-09-11 株式会社東芝 半導体発光素子、およびそれを用いた照明装置、ならびに半導体発光素子の製造方法
US8618565B2 (en) * 2010-03-22 2013-12-31 Seoul Opto Device Co., Ltd. High efficiency light emitting diode
MX2013005202A (es) * 2010-03-30 2013-11-20 Changchn Inst Of Applied Chemistry Chinese Academy Of Sciences Dispositivo de corriente alterna de led blanco.
US8772805B2 (en) 2010-03-31 2014-07-08 Seoul Viosys Co., Ltd. High efficiency light emitting diode and method for fabricating the same
KR101669640B1 (ko) 2010-03-31 2016-10-26 서울바이오시스 주식회사 고효율 발광 다이오드 및 그 제조 방법
US8858022B2 (en) 2011-05-05 2014-10-14 Ledengin, Inc. Spot TIR lens system for small high-power emitter
US9345095B2 (en) 2010-04-08 2016-05-17 Ledengin, Inc. Tunable multi-LED emitter module
US9080729B2 (en) 2010-04-08 2015-07-14 Ledengin, Inc. Multiple-LED emitter for A-19 lamps
US9012938B2 (en) 2010-04-09 2015-04-21 Cree, Inc. High reflective substrate of light emitting devices with improved light output
US9105824B2 (en) 2010-04-09 2015-08-11 Cree, Inc. High reflective board or substrate for LEDs
KR101014071B1 (ko) * 2010-04-15 2011-02-10 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법, 발광 소자 패키지 및 조명 시스템
KR101020963B1 (ko) 2010-04-23 2011-03-09 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR101034144B1 (ko) * 2010-04-28 2011-05-13 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법, 발광 소자 패키지 및 조명 시스템
US8329482B2 (en) 2010-04-30 2012-12-11 Cree, Inc. White-emitting LED chips and method for making same
KR101115537B1 (ko) * 2010-05-18 2012-02-29 서울옵토디바이스주식회사 고효율 반도체 발광소자
JP5725927B2 (ja) * 2010-05-18 2015-05-27 ソウル バイオシス カンパニー リミテッドＳｅｏｕｌ Ｖｉｏｓｙｓ Ｃｏ．，Ｌｔｄ． 高効率発光ダイオード及びその製造方法
JP5390472B2 (ja) * 2010-06-03 2014-01-15 株式会社東芝 半導体発光装置及びその製造方法
US9142715B2 (en) * 2010-06-24 2015-09-22 Seoul Viosys Co., Ltd. Light emitting diode
KR101182920B1 (ko) 2010-07-05 2012-09-13 엘지이노텍 주식회사 발광 소자 및 그 제조방법
KR101125025B1 (ko) 2010-07-23 2012-03-27 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR101000311B1 (ko) * 2010-07-27 2010-12-13 (주)더리즈 반도체 발광소자 및 그 제조방법
EP2599133A2 (de) 2010-07-28 2013-06-05 Seoul Opto Device Co., Ltd. Leuchtdiode mit einem verteilten bragg-reflektor
CN101908590A (zh) * 2010-07-28 2010-12-08 武汉迪源光电科技有限公司 一种三角锥出光面的高效发光二极管
US8764224B2 (en) 2010-08-12 2014-07-01 Cree, Inc. Luminaire with distributed LED sources
KR101795053B1 (ko) * 2010-08-26 2017-11-07 엘지이노텍 주식회사 발광 소자, 발광 소자 패키지, 라이트 유닛
US8563334B2 (en) * 2010-09-14 2013-10-22 Tsmc Solid State Lighting Ltd. Method to remove sapphire substrate
US8552517B1 (en) * 2010-09-14 2013-10-08 Amkor Technology, Inc. Conductive paste and mold for electrical connection of photovoltaic die to substrate
DE102010046091A1 (de) * 2010-09-20 2012-03-22 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip, Verfahren zur Herstellung und Anwendung in einem optoelektronischen Bauelement
TWI483428B (zh) * 2012-01-19 2015-05-01 Ritedia Corp 垂直式發光二極體及其製法與應用
US9070851B2 (en) 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
EP2624318A4 (de) * 2010-09-30 2015-11-11 Dowa Electronics Materials Co Lichtemittierendes gruppe-iii-nitrid-halbleiterbauelement und verfahren zu seiner herstellung
JP2012079914A (ja) * 2010-10-01 2012-04-19 Mitsubishi Electric Corp パワーモジュールおよびその製造方法
KR101692508B1 (ko) * 2010-10-18 2017-01-03 엘지이노텍 주식회사 발광 소자
US20120107991A1 (en) * 2010-10-21 2012-05-03 The Regents Of The University Of California Magnesium doping in barriers in multiple quantum well structures of iii-nitride-based light emitting devices
DE102010049186B4 (de) * 2010-10-21 2022-03-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
CN102456778B (zh) * 2010-10-26 2014-11-05 展晶科技(深圳)有限公司 发光二极管芯片制造方法
JP5589812B2 (ja) * 2010-12-06 2014-09-17 豊田合成株式会社 半導体発光素子
US9922967B2 (en) 2010-12-08 2018-03-20 Skorpios Technologies, Inc. Multilevel template assisted wafer bonding
JP5404596B2 (ja) * 2010-12-27 2014-02-05 株式会社東芝 発光素子およびその製造方法
US9136432B2 (en) 2010-12-28 2015-09-15 Seoul Viosys Co., Ltd. High efficiency light emitting diode
KR101239849B1 (ko) * 2011-01-07 2013-03-06 서울옵토디바이스주식회사 고효율 발광 다이오드
US9093356B2 (en) 2010-12-28 2015-07-28 Nichia Corporation Semiconductor light emitting element
JP5786868B2 (ja) 2010-12-28 2015-09-30 日亜化学工業株式会社 半導体発光装置
JP5702165B2 (ja) * 2011-01-26 2015-04-15 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 表面粗化による高効率窒化ガリウムベースの発光ダイオード
TWI523263B (zh) * 2011-02-01 2016-02-21 隆達電子股份有限公司 發光二極體及其製造方法
GB2487917B (en) * 2011-02-08 2015-03-18 Seren Photonics Ltd Semiconductor devices and fabrication methods
JP2012174902A (ja) * 2011-02-22 2012-09-10 Stanley Electric Co Ltd 窒化物半導体発光素子の製造方法
JP4778120B1 (ja) * 2011-03-08 2011-09-21 有限会社ナプラ 電子機器
US8680556B2 (en) 2011-03-24 2014-03-25 Cree, Inc. Composite high reflectivity layer
JP6056150B2 (ja) * 2011-04-08 2017-01-11 日亜化学工業株式会社 半導体発光素子
US8513900B2 (en) 2011-05-12 2013-08-20 Ledengin, Inc. Apparatus for tuning of emitter with multiple LEDs to a single color bin
JP5148729B2 (ja) 2011-05-16 2013-02-20 株式会社東芝 窒化物半導体素子の製造方法
KR101175613B1 (ko) 2011-05-31 2012-08-22 주식회사 코스텍시스 소자 패키지 및 그 제조 방법
US9728676B2 (en) 2011-06-24 2017-08-08 Cree, Inc. High voltage monolithic LED chip
US10243121B2 (en) 2011-06-24 2019-03-26 Cree, Inc. High voltage monolithic LED chip with improved reliability
US8686429B2 (en) * 2011-06-24 2014-04-01 Cree, Inc. LED structure with enhanced mirror reflectivity
US8395165B2 (en) 2011-07-08 2013-03-12 Bridelux, Inc. Laterally contacted blue LED with superlattice current spreading layer
US20130026480A1 (en) 2011-07-25 2013-01-31 Bridgelux, Inc. Nucleation of Aluminum Nitride on a Silicon Substrate Using an Ammonia Preflow
KR101500027B1 (ko) 2011-07-27 2015-03-18 엘지이노텍 주식회사 반도체 발광소자
US8916906B2 (en) 2011-07-29 2014-12-23 Kabushiki Kaisha Toshiba Boron-containing buffer layer for growing gallium nitride on silicon
US8865565B2 (en) 2011-08-02 2014-10-21 Kabushiki Kaisha Toshiba LED having a low defect N-type layer that has grown on a silicon substrate
US9012939B2 (en) 2011-08-02 2015-04-21 Kabushiki Kaisha Toshiba N-type gallium-nitride layer having multiple conductive intervening layers
US9142743B2 (en) 2011-08-02 2015-09-22 Kabushiki Kaisha Toshiba High temperature gold-free wafer bonding for light emitting diodes
US9343641B2 (en) 2011-08-02 2016-05-17 Manutius Ip, Inc. Non-reactive barrier metal for eutectic bonding process
US20130032810A1 (en) 2011-08-03 2013-02-07 Bridgelux, Inc. Led on silicon substrate using zinc-sulfide as buffer layer
US8564010B2 (en) 2011-08-04 2013-10-22 Toshiba Techno Center Inc. Distributed current blocking structures for light emitting diodes
JP6077201B2 (ja) * 2011-08-11 2017-02-08 昭和電工株式会社 発光ダイオードおよびその製造方法
US9977188B2 (en) 2011-08-30 2018-05-22 Skorpios Technologies, Inc. Integrated photonics mode expander
US8624482B2 (en) 2011-09-01 2014-01-07 Toshiba Techno Center Inc. Distributed bragg reflector for reflecting light of multiple wavelengths from an LED
US8669585B1 (en) 2011-09-03 2014-03-11 Toshiba Techno Center Inc. LED that has bounding silicon-doped regions on either side of a strain release layer
US8558247B2 (en) 2011-09-06 2013-10-15 Toshiba Techno Center Inc. GaN LEDs with improved area and method for making the same
US8686430B2 (en) 2011-09-07 2014-04-01 Toshiba Techno Center Inc. Buffer layer for GaN-on-Si LED
CN103918079B (zh) 2011-09-11 2017-10-31 科锐 包括具有改进布局的晶体管的高电流密度功率模块
US9640617B2 (en) * 2011-09-11 2017-05-02 Cree, Inc. High performance power module
US9373617B2 (en) 2011-09-11 2016-06-21 Cree, Inc. High current, low switching loss SiC power module
JP5899734B2 (ja) * 2011-09-16 2016-04-06 日亜化学工業株式会社 発光装置
US9178114B2 (en) 2011-09-29 2015-11-03 Manutius Ip, Inc. P-type doping layers for use with light emitting devices
US20130082274A1 (en) 2011-09-29 2013-04-04 Bridgelux, Inc. Light emitting devices having dislocation density maintaining buffer layers
US8698163B2 (en) 2011-09-29 2014-04-15 Toshiba Techno Center Inc. P-type doping layers for use with light emitting devices
US8853668B2 (en) 2011-09-29 2014-10-07 Kabushiki Kaisha Toshiba Light emitting regions for use with light emitting devices
US8664679B2 (en) 2011-09-29 2014-03-04 Toshiba Techno Center Inc. Light emitting devices having light coupling layers with recessed electrodes
US9012921B2 (en) 2011-09-29 2015-04-21 Kabushiki Kaisha Toshiba Light emitting devices having light coupling layers
US8552465B2 (en) 2011-11-09 2013-10-08 Toshiba Techno Center Inc. Method for reducing stress in epitaxial growth
US8581267B2 (en) 2011-11-09 2013-11-12 Toshiba Techno Center Inc. Series connected segmented LED
JP6038443B2 (ja) * 2011-11-21 2016-12-07 スタンレー電気株式会社 半導体発光装置および半導体発光装置の製造方法
US9209358B2 (en) 2011-12-14 2015-12-08 Seoul Viosys Co., Ltd. Semiconductor device and method of fabricating the same
US20140339566A1 (en) * 2011-12-14 2014-11-20 Seoul Viosys Co., Ltd. Semiconductor device and method of fabricating the same
JP2013145867A (ja) * 2011-12-15 2013-07-25 Hitachi Cable Ltd 窒化物半導体テンプレート及び発光ダイオード
TWI479694B (zh) * 2012-01-11 2015-04-01 Formosa Epitaxy Inc Light emitting diode wafers
JP5450683B2 (ja) * 2012-02-06 2014-03-26 株式会社東芝 窒化物半導体素子の製造方法
US9076923B2 (en) * 2012-02-13 2015-07-07 Epistar Corporation Light-emitting device manufacturing method
US11032884B2 (en) 2012-03-02 2021-06-08 Ledengin, Inc. Method for making tunable multi-led emitter module
JP5694215B2 (ja) 2012-03-07 2015-04-01 株式会社東芝 半導体発光素子
US9897284B2 (en) 2012-03-28 2018-02-20 Ledengin, Inc. LED-based MR16 replacement lamp
KR101239852B1 (ko) * 2012-05-10 2013-03-06 학교법인 포항공과대학교 ＧａＮ계 화합물 반도체 발광 소자
JP2012169667A (ja) * 2012-05-11 2012-09-06 Toshiba Corp 半導体発光素子及びその製造方法
KR101941450B1 (ko) * 2012-08-02 2019-01-23 엘지디스플레이 주식회사 발광 다이오드 패키지
JP5440674B1 (ja) 2012-09-18 2014-03-12 ウシオ電機株式会社 Ｌｅｄ素子及びその製造方法
JP2014060294A (ja) * 2012-09-18 2014-04-03 Ushio Inc Ｌｅｄ素子及びその製造方法
DE102012219622B4 (de) 2012-10-26 2022-06-30 Robert Bosch Gmbh Mikrotechnologisches Bauelement mit Bondverbindung
KR101976459B1 (ko) * 2012-11-02 2019-05-09 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 라이트 유닛
KR20140065105A (ko) * 2012-11-21 2014-05-29 서울바이오시스 주식회사 고효율 발광 다이오드
TW201424059A (zh) * 2012-12-14 2014-06-16 Epistar Corp 光電元件及其製造方法
DE102012112530A1 (de) * 2012-12-18 2014-06-18 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
KR20140100115A (ko) * 2013-02-05 2014-08-14 삼성전자주식회사 반도체 발광 소자
JP6013931B2 (ja) * 2013-02-08 2016-10-25 株式会社東芝 半導体発光素子
US9234801B2 (en) 2013-03-15 2016-01-12 Ledengin, Inc. Manufacturing method for LED emitter with high color consistency
US8896008B2 (en) 2013-04-23 2014-11-25 Cree, Inc. Light emitting diodes having group III nitride surface features defined by a mask and crystal planes
CN104241262B (zh) 2013-06-14 2020-11-06 惠州科锐半导体照明有限公司 发光装置以及显示装置
CN104347770A (zh) * 2013-08-06 2015-02-11 上海蓝光科技有限公司 一种发光二极管及其制造方法
US9419194B2 (en) 2013-08-13 2016-08-16 Palo Alto Research Center Incorporated Transparent electron blocking hole transporting layer
TWI597863B (zh) * 2013-10-22 2017-09-01 晶元光電股份有限公司 發光元件及其製造方法
JP2014042062A (ja) * 2013-10-31 2014-03-06 Future Light Limited Liability Company 発光素子
CN103646951A (zh) * 2013-12-17 2014-03-19 山东大学 一种耐高温电子器件原材料及其应用
US9406654B2 (en) 2014-01-27 2016-08-02 Ledengin, Inc. Package for high-power LED devices
US9664855B2 (en) 2014-03-07 2017-05-30 Skorpios Technologies, Inc. Wide shoulder, high order mode filter for thick-silicon waveguides
JP2015191976A (ja) * 2014-03-27 2015-11-02 ウシオ電機株式会社 半導体発光素子及びその製造方法
CN104953000B (zh) * 2014-03-27 2019-02-15 首尔伟傲世有限公司 发光二极管及发光装置
US10003173B2 (en) 2014-04-23 2018-06-19 Skorpios Technologies, Inc. Widely tunable laser control
WO2015183992A1 (en) 2014-05-27 2015-12-03 Skorpios Technologies, Inc. Waveguide mode expander using amorphous silicon
CN106663919B (zh) * 2014-06-17 2020-03-10 索尼公司 发光元件及其制造方法
CN104064653B (zh) * 2014-07-04 2016-08-31 映瑞光电科技(上海)有限公司 发光二极管、封装基板结构及封装方法
US9642206B2 (en) 2014-11-26 2017-05-02 Ledengin, Inc. Compact emitter for warm dimming and color tunable lamp
US10658546B2 (en) 2015-01-21 2020-05-19 Cree, Inc. High efficiency LEDs and methods of manufacturing
US9530943B2 (en) 2015-02-27 2016-12-27 Ledengin, Inc. LED emitter packages with high CRI
EP3286587A4 (de) 2015-04-20 2018-12-26 Skorpios Technologies, Inc. Vertikale ausgangskuppler für photonische vorrichtungen
JP6617875B2 (ja) * 2015-12-10 2019-12-11 ウシオ電機株式会社 Ｌｅｄ素子及びその製造方法
JP6361722B2 (ja) * 2015-12-08 2018-07-25 日亜化学工業株式会社 発光装置の製造方法
US9893239B2 (en) 2015-12-08 2018-02-13 Nichia Corporation Method of manufacturing light emitting device
WO2017126454A1 (ja) * 2016-01-19 2017-07-27 富士フイルム株式会社 導電フィルム積層体
JP6332301B2 (ja) * 2016-02-25 2018-05-30 日亜化学工業株式会社 発光素子
US9837792B2 (en) * 2016-03-07 2017-12-05 Epistar Corporation Light-emitting device
JP6668863B2 (ja) 2016-03-22 2020-03-18 日亜化学工業株式会社 発光素子
CN205944139U (zh) 2016-03-30 2017-02-08 首尔伟傲世有限公司 紫外线发光二极管封装件以及包含此的发光二极管模块
CN107331610A (zh) * 2016-04-28 2017-11-07 上海新昇半导体科技有限公司 提高硅晶片外延层表面平整度的方法
TWI606611B (zh) * 2016-08-30 2017-11-21 光磊科技股份有限公司 具亞胺化鋰層的基板、具亞胺化鋰層的ｌｅｄ及其相關製作方法
US10340415B2 (en) 2016-09-01 2019-07-02 Lg Innotek Co., Ltd. Semiconductor device and semiconductor device package including the same
JP7178712B2 (ja) 2016-09-10 2022-11-28 スージョウ レキン セミコンダクター カンパニー リミテッド 半導体素子
JP7403797B2 (ja) 2016-09-13 2023-12-25 スージョウ レキン セミコンダクター カンパニー リミテッド 半導体素子およびこれを含む半導体素子パッケージ
KR101791159B1 (ko) 2016-10-07 2017-10-30 서울바이오시스 주식회사 고효율 발광 다이오드 및 그 제조 방법
US10219345B2 (en) 2016-11-10 2019-02-26 Ledengin, Inc. Tunable LED emitter with continuous spectrum
US10903395B2 (en) 2016-11-24 2021-01-26 Lg Innotek Co., Ltd. Semiconductor device having varying concentrations of aluminum
KR20180074198A (ko) * 2016-12-23 2018-07-03 서울바이오시스 주식회사 반도체 발광 소자
JP6824501B2 (ja) * 2017-02-08 2021-02-03 ウシオ電機株式会社 半導体発光素子
KR102390828B1 (ko) 2017-08-14 2022-04-26 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자
US10649148B2 (en) 2017-10-25 2020-05-12 Skorpios Technologies, Inc. Multistage spot size converter in silicon photonics
JP6818672B2 (ja) * 2017-11-16 2021-01-20 株式会社東芝 面発光量子カスケードレーザ
JP7263695B2 (ja) * 2018-01-15 2023-04-25 大日本印刷株式会社 光学素子、光照射装置
JP7248441B2 (ja) * 2018-03-02 2023-03-29 シャープ株式会社 画像表示素子
US10575374B2 (en) 2018-03-09 2020-02-25 Ledengin, Inc. Package for flip-chip LEDs with close spacing of LED chips
CN108847573B (zh) * 2018-06-27 2021-06-01 湖北光安伦芯片有限公司 垂直腔面发射激光器及其制作方法
CN109087966A (zh) * 2018-08-01 2018-12-25 华北电力大学 聚光光伏发电玻璃贴
CN109046437B (zh) * 2018-10-10 2022-02-08 安徽瑞和新材料有限公司 一种可全天使用的光催化剂及其制备方法与应用
KR102221692B1 (ko) 2018-10-12 2021-03-03 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP7146562B2 (ja) * 2018-10-17 2022-10-04 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
JP7262965B2 (ja) * 2018-10-17 2023-04-24 スタンレー電気株式会社 半導体発光素子
FR3089746A1 (fr) * 2018-12-06 2020-06-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede d’adaptation de l’extraction lumineuse d’une diode electroluminescente
US11360263B2 (en) 2019-01-31 2022-06-14 Skorpios Technologies. Inc. Self-aligned spot size converter
KR20210145780A (ko) * 2019-04-05 2021-12-02 도쿄엘렉트론가부시키가이샤 기판 처리 시스템 및 기판 처리 방법
CN113903839B (zh) * 2019-10-18 2023-05-02 厦门三安光电有限公司 一种发光二极管
CN111209497B (zh) * 2020-01-05 2022-03-04 西安电子科技大学 基于GAN和Char-CNN的DGA域名检测方法
CN111129953B (zh) * 2020-03-27 2020-07-14 常州纵慧芯光半导体科技有限公司 一种激光器及其制造方法及激光器阵列
KR20210126203A (ko) * 2020-04-09 2021-10-20 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
JP2021170595A (ja) 2020-04-15 2021-10-28 国立大学法人東海国立大学機構 窒化ガリウム半導体装置およびその製造方法
US11592166B2 (en) 2020-05-12 2023-02-28 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
US11876042B2 (en) 2020-08-03 2024-01-16 Feit Electric Company, Inc. Omnidirectional flexible light emitting device
FR3115930B1 (fr) * 2020-10-29 2024-03-22 Commissariat Energie Atomique Diode électroluminescente à structure de contact tridimensionnelle, écran d’affichage et procédé de fabrication associé
KR102530795B1 (ko) * 2021-02-04 2023-05-10 웨이브로드 주식회사 엘이디 패키지를 제조하는 방법

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2666228B2 (ja) * 1991-10-30 1997-10-22 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子
US5376580A (en) * 1993-03-19 1994-12-27 Hewlett-Packard Company Wafer bonding of light emitting diode layers
JP3259811B2 (ja) 1995-06-15 2002-02-25 日亜化学工業株式会社 窒化物半導体素子の製造方法及び窒化物半導体素子
JP3905935B2 (ja) * 1995-09-01 2007-04-18 株式会社東芝 半導体素子及び半導体素子の製造方法
JP3269070B2 (ja) 1995-10-30 2002-03-25 日亜化学工業株式会社 窒化物半導体発光素子
US5779924A (en) * 1996-03-22 1998-07-14 Hewlett-Packard Company Ordered interface texturing for a light emitting device
US5985687A (en) * 1996-04-12 1999-11-16 The Regents Of The University Of California Method for making cleaved facets for lasers fabricated with gallium nitride and other noncubic materials
JP3087829B2 (ja) * 1996-10-14 2000-09-11 日亜化学工業株式会社 窒化物半導体素子の製造方法
JP3301601B2 (ja) * 1998-01-27 2002-07-15 日亜化学工業株式会社 窒化物半導体発光素子
JP3525061B2 (ja) * 1998-09-25 2004-05-10 株式会社東芝 半導体発光素子の製造方法
JP3469484B2 (ja) 1998-12-24 2003-11-25 株式会社東芝 半導体発光素子およびその製造方法
GB9913950D0 (en) * 1999-06-15 1999-08-18 Arima Optoelectronics Corp Unipolar light emitting devices based on iii-nitride semiconductor superlattices
JP3893874B2 (ja) * 1999-12-21 2007-03-14 日亜化学工業株式会社 窒化物半導体発光素子の製造方法
JP2001298214A (ja) * 2000-02-10 2001-10-26 Sharp Corp 半導体発光素子およびその製造方法
JP4501225B2 (ja) * 2000-02-21 2010-07-14 日亜化学工業株式会社 発光素子および発光素子の製造方法
JP2001284641A (ja) 2000-03-31 2001-10-12 Sony Corp 画像表示素子
CN1292494C (zh) * 2000-04-26 2006-12-27 奥斯兰姆奥普托半导体有限责任公司 发光半导体元件及其制造方法
JP4050444B2 (ja) * 2000-05-30 2008-02-20 信越半導体株式会社 発光素子及びその製造方法
TW472400B (en) * 2000-06-23 2002-01-11 United Epitaxy Co Ltd Method for roughing semiconductor device surface to increase the external quantum efficiency
US20020017652A1 (en) * 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
US6562648B1 (en) * 2000-08-23 2003-05-13 Xerox Corporation Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials
EP1471583B1 (de) * 2002-01-28 2009-10-07 Nichia Corporation Nitrid-halbleiterbauelement mit einem trägersubstrat und verfahren zu seiner herstellung

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