KR100909739B1 - 대향전극구조의 질화물 반도체소자 - Google Patents
대향전극구조의 질화물 반도체소자 Download PDFInfo
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- KR100909739B1 KR100909739B1 KR1020077011214A KR20077011214A KR100909739B1 KR 100909739 B1 KR100909739 B1 KR 100909739B1 KR 1020077011214 A KR1020077011214 A KR 1020077011214A KR 20077011214 A KR20077011214 A KR 20077011214A KR 100909739 B1 KR100909739 B1 KR 100909739B1
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- Prior art keywords
- nitride semiconductor
- layer
- electrode
- light
- protective film
- Prior art date
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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Abstract
Description
Claims (20)
- 도전성을 갖는 지지기판과;상기 지지기판의 위 또는 위쪽에 형성된 제 1 전극과;상기 제 1 전극의 한쪽면에 형성된, 발광층을 구비하는 질화물 반도체와;상기 질화물 반도체의 상기 제 1 전극이 형성된 면과 대향하는 면에 형성된 제 2 전극을 구비하는 대향전극구조의 질화물 반도체소자로서,상기 제 1 전극이, 직사각형형상, 정사각형형상, 격자형상, 도트형상, 마름모형, 평행사변형, 스트라이프형상 중의 어느 하나의 패턴으로 형성되어 있는 것을 특징으로 하는 대향전극구조의 질화물 반도체소자.
- 제 1 항에 있어서, 제 2 전극이, 상기 질화물 반도체의 일부분으로서, 제 1 전극이 설치된 부분과 대향하지 않는 부분에 설치되어 있는 것을 특징으로 하는 대향전극구조의 질화물 반도체소자.
- 제 1 항에 있어서, 상기 지지기판이 Cu-W, Cu-Mo, AlSiC, AlN, Si, SiC, Cu-다이아몬드 중의 어느하나로 구성되어 있는 것을 특징으로 하는 대향전극구조의 질화물 반도체소자.
- 제 1 항에 있어서, 상기 질화물 반도체의 최상층상의, 제 1 전극 또는 제 2 전극이 형성된 영역 이외의 부분에 요철부를 설치하고 있는 것을 특징으로 하는 대향전극구조의 질화물 반도체소자.
- 도전성을 갖는 지지기판과;상기 지지기판의 한쪽면의 위 또는 위쪽에 형성된 제 1 전극과;발광층을 구비하는 질화물 반도체로서, 상기 제 1 전극의 위 또는 위쪽에 형성된 질화물 반도체와;제 1 전극과 대향 전극구조를 구성하는 제 2 전극으로서, 상기 질화물 반도체의 상기 제 1 전극이 형성된 면과 대향하는 면에 형성된 제 2 전극을 구비하는 대향전극구조의 질화물 반도체소자로서,상기 제 2 전극이, 그물코형상, 격자형상 중의 어느 하나의 패턴으로 형성되어 있는 것을 특징으로 하는 대향전극구조의 질화물 반도체소자.
- 제 5 항에 있어서, 상기 제 2 전극의 적어도 일부가, 상기 제 1 전극이 설치된 영역과 직접 대향하지 않는 것을 특징으로 하는 대향전극구조의 질화물 반도체소자.
- 제 5 항에 있어서, 상기 지지기판이 Cu-W, Cu-Mo, AlSiC, AlN, Si, SiC, Cu- 다이아몬드 중의 어느하나로 구성되어 있는 것을 특징으로 하는 대향전극구조의 질화물 반도체소자.
- 제 5 항에 있어서, 상기 질화물 반도체의 최상층상의, 제 2 전극이 형성된 영역 이외의 부분에 요철부를 설치하고 있는 것을 특징으로 하는 대향전극구조의 질화물 반도체소자.
- 제 8 항에 있어서, 상기 요철부의 철부가 섬모양형상, 격자형상, 직사각형, 원형상, 다각형형상 중의 어느하나인 것을 특징으로 하는 대향전극구조의 질화물 반도체소자.
- 제 8 항에 있어서, 상기 질화물 반도체의 최상층에 개구부(開口部)와 노출면이 형성되어 있고,상기 질화물 반도체의 상기 개구부와 노출면이 형성된 면과 반대측의 면으로서, 상기 개구부의 내부에 대향하는 위치에, 복수의 제 1 전극이 형성되어 있는 것을 특징으로 하는 대향전극구조의 질화물 반도체소자.
- 제 8 항에 있어서, 상기 질화물 반도체의 최상층상에 제 2 보호막을 구비하고 있고,상기 제 2 보호막에는 개구부(開口部)와 노출면이 형성되어 있고,상기 질화물 반도체의 상기 개구부와 노출면이 형성된 면과 반대측의 면으로서, 상기 제 2 보호막의 개구부의 내부에 대향하는 위치에, 복수의 제 1 전극이 형성되어 있는 것을 특징으로 하는 대향전극구조의 질화물 반도체소자.
- 제 5 항에 있어서, 상기 질화물 반도체의 최상층에 제 2 보호막이 형성되어 있고, 상기 제 2 보호막으로부터 상기 제 2 전극의 적어도 일부가 노출되어 있고, 상기 제 1 전극은 적어도 일부가 상기 제 2 전극과 지지기판 사이에 개재되어 있고,상기 질화물 반도체와 제 1 전극의 계면에 요철이 형성되어 있는 것을 특징으로 하는 대향전극구조의 질화물 반도체소자.
- 제 12 항에 있어서, 상기 제 1 전극이 요철형상으로 형성되어 있는 것을 특징으로 하는 대향전극구조의 질화물 반도체소자.
- 제 1 항 내지 제 13 항 중의 어느 한 항에 있어서,상기 지지기판의 열팽창계수가, 상기 질화물 반도체의 열팽창계수와 같은 것인 것을 특징으로 하는 대향전극구조의 질화물 반도체소자.
- 지지기판과;상기 지지기판의 위 또는 위쪽에 형성된 도전층과;상기 도전층의 위 또는 위쪽에 적어도 부분적으로 형성된 제 1 전극과;상기 도전층의, 상기 제 1 전극이 형성된 영역 이외에 있어서, 위 또는 위쪽에 적어도 부분적으로 형성된 제 1 보호막과;발광층을 구비하는 질화물 반도체로서, 상기 질화물 반도체는 상기 제 1 전극 및 도전층의 위 또는 위쪽에 형성되고, 상기 제 1 전극과 대향하는 제 1 면을 갖는 질화물 반도체를 구비하는 대향전극구조의 질화물 반도체소자로서,상기 질화물 반도체의 제 1 면과 제 1 전극의 계면의 적어도 제 1 부분, 및 상기 제 1 보호막과 도전층의 계면의 적어도 제 2 부분이, 단차(段差)형상으로 형성되어 있는 것을 특징으로 하는 대향전극구조의 질화물 반도체소자.
- 제 15 항에 있어서, 상기 제 1 보호막과 질화물 반도체가 광전파 가능한 광학적 접속을 갖는 것을 특징으로 하는 대향전극구조의 질화물 반도체소자.
- 삭제
- 제 15 항에 있어서, 상기 제 1 보호막이 상기 발광층으로부터 발광되는 광전파 가능한 광투과막을 구비하는 것을 특징으로 하는 대향전극구조의 질화물 반도체소자.
- 제 15 항에 있어서, 상기 제 1 보호막은, 상기 질화물 반도체의 가로방향에 있어서 제 1 보호막과 질화물 반도체의 계면으로부터 신장된 영역을 갖고, 상기 영역에 있어서 상기 보호막이 질화물 반도체와 전기적으로 접촉하지 않고, 또한 질화물 반도체의 외부로 연신되어 이루어지는 것을 특징으로 하는 대향전극구조의 질화물 반도체소자.
- 제 15 항에 있어서, 상기 제 1 보호막은, Al, Ag, Rh로 이루어지는 군으로부터 선택되는 적어도 하나의 금속막을 포함하고, 상기 금속막은 상기 질화물 반도체와 접하고 있지 않은 측에 형성되어 있는 것을 특징으로 하는 대향전극구조의 질화물 반도체소자.
Applications Claiming Priority (11)
Application Number | Priority Date | Filing Date | Title |
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JP2002019192 | 2002-01-28 | ||
JPJP-P-2002-00019192 | 2002-01-28 | ||
JPJP-P-2002-00175686 | 2002-06-17 | ||
JP2002175686 | 2002-06-17 | ||
JP2002195179 | 2002-07-03 | ||
JPJP-P-2002-00195179 | 2002-07-03 | ||
JPJP-P-2002-00233866 | 2002-08-09 | ||
JP2002233866 | 2002-08-09 | ||
JPJP-P-2002-00356463 | 2002-12-09 | ||
JP2002356463 | 2002-12-09 | ||
PCT/JP2003/000757 WO2003065464A1 (fr) | 2002-01-28 | 2003-01-27 | Dispositif a semi-conducteur a base de nitrure comprenant un substrat de support, et son procede de realisation |
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KR1020047005724A Division KR100909733B1 (ko) | 2002-01-28 | 2003-01-27 | 지지기판을 갖는 질화물 반도체소자 및 그 제조방법 |
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