CN104064653B - 发光二极管、封装基板结构及封装方法 - Google Patents
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Abstract
本发明提出了一种发光二极管、封装基板结构及封装方法,将发光二极管的P型电极和N型电极的连接端设置在同一端,同时在封装基板结构中设有插槽,插槽内设有连接金属,在进行封装时,将发光二极管设有连接端的一端插装至封装基板结构中的插槽中,避免了打线工艺,同时能够实现发光二极管全角度360°的发光,无需使用DBR结构,减少了工艺复杂度。
Description
技术领域
本发明涉及发光二极管制造领域,尤其涉及一种发光二极管、封装基板结构及封装方法。
背景技术
基于GaN(氮化镓)材料的LED(Light-Emitting Diode,发光二极管)器件目前已广泛应用于生产和生活中,其主要用于发出蓝光和绿光。基于GaN材料的LED器件通常采用包含N型掺杂GaN、InGaN(氮化铟镓)量子阱和P型掺杂GaN,在两端加偏压后,P型掺杂GaN提供空穴载流子,N型掺杂GaN提供电子载流子,电子和空穴反向流动,在InGaN量子阱中发生复合,从而发出一定波长的光。在影响器件发光效率的诸多因素中,用于加电压的两端金属电极与P型和N型掺杂GaN应形成良好的欧姆接触,减小接触电阻造成的能量损耗。
具体的,请参考图1和图2,图1为现有技术中发光二极管的俯视图,图2为现有技术中发光二极管的结构剖面图;所述发光二极1包括依次形成的衬底10、N型掺杂20,量子阱30和P型掺杂40,其中,所述量子阱30和P型掺杂40暴露出部分所述N型掺杂20,在暴露出的N型掺杂20处形成N型电极21,在所述P型掺杂40上形成P型电极41,所述N型电极21和P型电极41用于后续的连线。
现有技术中,为了后续打线的方便,通常所述N型电极21和P型电极41与后续连线的区域(如图1中N型电极21和P型电极41虚线框所示的一端)分别位于发光二极1的两端。请参考图3,图3为对发光二极管封装后的结构示意图;其中,发光二极管1的N型电极21和P型电极41通过金线2分别与外引脚4相连,在所述发光二极管1上形成透光保护层3。
为了提高发光强度,通常在衬底(通常为蓝宝石材质)背面镀上DBR(布拉格反射层)结构使背面的光经过其反射后从正面发出来,增加出光效率。然而,这会增加发光二极管1的制备工艺成本和难度。在光二极管1封装过程中,一般光二极管1通过硅胶粘贴在支架上,发光二极管1发出的光经过透光保护层3(通常为透镜)发射出来,由于支架不透光,封装后单面出光使发光二极管1的发光角度限制在110°左右,无法进行全角度360°照明。
发明内容
本发明的目的在于提供一种发光二极管、封装基板结构及封装方法,能够进行全角度360°照明,并且工艺简单。
为了实现上述目的,本发明提出了一种发光二极管,包括:发光器件和形成于所述发光器件上的电极,所述电极为N型电极和P型电极,所述N型电极和P型电极均设有连接端,且所述N型电极和P型电极的连接端均设在所述发光二极管的同一端。
进一步的,在所述的发光二极管中,所述发光器件包括依次形成的衬底、N型掺杂,量子阱和P型掺杂,其中,所述量子阱和P型掺杂暴露出部分所述N型掺杂,在暴露出的N型掺杂处形成所述N型电极,在所述P型掺杂上形成P型电极。
进一步的,在所述的发光二极管中,所述P型掺杂上形成有电流扩展层-氧化铟锡,所述P型电极形成在所述电流扩展层-氧化铟锡上。
进一步的,在所述的发光二极管中,所述N型电极和P型电极下均设有电流阻挡层。
进一步的,在所述的发光二极管中,所述电流阻挡层为二氧化硅。
进一步的,在所述的发光二极管中,所述发光二极管厚度范围是100μm~300μm。
进一步的,在所述的发光二极管中,所述发光二极管的长宽比在1~3之间。
进一步的,本发明还提出一种封装基板结构,用于对上文所述的发光二极管进行封装,所述结构包括:
基板主体,所述基板主体设有一插槽;
连接金属,所述连接金属一部分设于所述插槽内,一部分设于所述基板主体的表面。
进一步的,在所述的封装基板结构中,所述插槽的尺寸与所述发光二极管的尺寸相匹配。
进一步的,在所述的封装基板结构中,设于所述插槽内的连接金属翘起且具有弹性形变能力。
进一步的,在所述的封装基板结构中,所述基板主体材质为陶瓷或者PCB板。
进一步的,在所述的封装基板结构中,所述连接金属为2个,其位置分别与所述N型电极、P型电极对应。
进一步的,本发明还提出一种封装方法,将上文所述的发光二极管封装至如上文所述的封装基板结构中,所述方法包括步骤:
将所述发光二极管插装在所述封装基板结构的插槽中,使所述电极与所述连接金属相连;
在所述封装基板结构上形成透光保护层,所述透光保护层包围所述发光二极管。
与现有技术相比,本发明的有益效果主要体现在:将发光二极管的P型电极和N型电极的连接端设置在同一端,同时在封装基板结构中设有插槽,插槽内设有连接金属,在进行封装时,将发光二极管设有连接端的一端插装至封装基板结构中的插槽中,避免了打线工艺,同时能够实现发光二极管全角度360°的发光,无需使用DBR结构,减少了工艺复杂度。
附图说明
图1为现有技术中发光二极管的俯视图;
图2为现有技术中发光二极管的结构剖面图;
图3为现有技术中对发光二极管封装后的结构示意图;
图4为本发明一实施例中发光二极管的俯视图;
图5为本发明一实施例中封装基板结构的俯视图;
图6为本发明一实施例中封装基板结构沿图5中A-A’的剖面示意图;
图7为本发明一实施例中发光二极管插装在封装基板结构中的主示图;
图8为本发明一实施例中发光二极管插装在封装基板结构中的侧示图;
图9为本发明一实施例中对发光二极管封装后的结构示意图。
具体实施方式
下面将结合示意图对本发明的发光二极管、封装基板结构及封装方法进行更详细的描述,其中表示了本发明的优选实施例,应该理解本领域技术人员可以修改在此描述的本发明,而仍然实现本发明的有利效果。因此,下列描述应当被理解为对于本领域技术人员的广泛知道,而并不作为对本发明的限制。
为了清楚,不描述实际实施例的全部特征。在下列描述中,不详细描述公知的功能和结构,因为它们会使本发明由于不必要的细节而混乱。应当认为在任何实际实施例的开发中,必须做出大量实施细节以实现开发者的特定目标,例如按照有关系统或有关商业的限制,由一个实施例改变为另一个实施例。另外,应当认为这种开发工作可能是复杂和耗费时间的,但是对于本领域技术人员来说仅仅是常规工作。
在下列段落中参照附图以举例方式更具体地描述本发明。根据下面说明和权利要求书,本发明的优点和特征将更清楚。需说明的是,附图均采用非常简化的形式且均使用非精准的比例,仅用以方便、明晰地辅助说明本发明实施例的目的。
请参考图4,在本实施例中,提出了一种发光二极管,包括:发光器件和形成于所述发光器件上的电极,所述电极为P型电极210和N型电极110,所述N型电极110和P型电极210均设有连接端,且所述N型电极110和P型电极210的连接端均设在所述发光二极管的同一端。
所述发光器件包括依次形成的衬底、N型掺杂100,量子阱和P型掺杂200,其中,所述量子阱和P型掺杂200暴露出部分所述N型掺杂100,在暴露出的N型掺杂100处形成所述N型电极110,在所述P型掺杂200上形成P型电极210。
具体的,所述衬底可以为蓝宝石衬底、硅衬底等等,所述N型掺杂100为N型的GaN,所述P型掺杂200为P型的GaN;所述P型掺杂200上形成有电流扩展层-氧化铟锡(ITO),所述P型电极210形成在所述电流扩展层-氧化铟锡上,所述P型电极210和N型电极110下均设有电流阻挡层,例如是二氧化硅或者其他绝缘层,用于阻挡部分电流。
在本实施例中,所述发光二极管厚度范围是100μm~300μm,例如是200μm,所述发光二极管的长宽比在1~3之间,例如长宽比为2:1。
本实施例中提出的发光二极管主要改进是将N型电极110和P型电极210的连接端均形成在发光二极管的同一端,以方便后续进行封装。
在本实施例的另一面,还提出了一种封装基板结构,请参考图5和图6,所述结构包括:基板主体300,所述基板主体300设有一插槽330;连接金属,所述连接金属一部分设于所述插槽330内,一部分设于所述基板主体300的表面。在本实施例中,所述连接金属与所述发光二极管的N型电极110和P型电极210位置相对应,个数也相对应,因此所述连接金属的个数为2个,分别是第一连接金属310,用于与所述N型电极110相连;第二连接金属320,用于与所述P型电极210相连。
由于封装时,需要将所述发光二极管的一端插装至所述插槽330内,因此所述插槽330的尺寸与所述发光二极管的尺寸相匹配,例如宽度一致,厚度也一致,在特殊需求中,所述插槽330的尺寸可以略大于所述发光二极管的尺寸。
设于所述插槽330内的连接金属翘起且具有弹性形变能力,如图6所示,采用此种结构,在发光二极管插装至插槽330内时,提高所述连接金属与所述电极之间的连接,确保两者连接良好。其中,所述连接金属为导电金属材质即可,例如金或者铝等,用作与外接相连的导线。
所述基板主体300的材质为陶瓷或者PCB板(印刷电路板),能够保证所述发光二极管稳固的固定在所述基板主体300上。
在本实施例中的另外一面,还提出了一种封装方法,能够将上文所述的发光二极管封装在所述封装基板结构中,所述包括步骤:
S100:将所述发光二极管插装在所述封装基板结构的插槽330中,使所述电极与所述连接金属相连,如图7和图8所示;
S200:在所述封装基板结构上形成透光保护层400,所述透光保护层400包围所述发光二极管,如图9所示。
其中,所述透光保护层400可以为透镜,一方面增加透光,另外一方面起着保护作用。
可见,在本实施例中提出的发光二极管、封装基板结构及封装方法中,无需进行打线工艺,也无需形成DBR结构,并且能够实现全角度360°的发光。
综上,在本发明实施例提供的发光二极管、封装基板结构及封装方法中,将发光二极管的P型电极和N型电极的设置在同一端,同时在封装基板结构中设有插槽,插槽内设有连接金属,在进行封装时,将发光二极管设有连接电极的一端插装至封装基板结构中的插槽中,避免了打线工艺,同时能够实现发光二极管全角度360°的发光,无需使用DBR结构,减少了工艺复杂度。
上述仅为本发明的优选实施例而已,并不对本发明起到任何限制作用。任何所属技术领域的技术人员,在不脱离本发明的技术方案的范围内,对本发明揭露的技术方案和技术内容做任何形式的等同替换或修改等变动,均属未脱离本发明的技术方案的内容,仍属于本发明的保护范围之内。
Claims (6)
1.一种封装基板结构,用于对发光二极管进行封装,所述发光二极管包括:发光器件和形成于所述发光器件上的电极,所述电极为N型电极和P型电极,所述N型电极和P型电极均设有连接端,且所述N型电极和P型电极的连接端均设在所述发光二极管的同一端,所述封装基板结构包括:
基板主体,所述基板主体设有一插槽;
连接金属,所述连接金属一部分设于所述插槽内,一部分设于所述基板主体的表面。
2.如权利要求1所述的封装基板结构,其特征在于,所述插槽的尺寸与所述发光二极管的尺寸相匹配。
3.如权利要求1所述的封装基板结构,其特征在于,设于所述插槽内的连接金属翘起且具有弹性形变能力。
4.如权利要求1所述的封装基板结构,其特征在于,所述基板主体材质为陶瓷或者PCB板。
5.如权利要求1所述的封装基板结构,其特征在于,所述连接金属为2个,其位置分别与所述N型电极、P型电极对应。
6.一种封装方法,将发光二极管封装至如权利要求1至5中任意一种所述的封装基板结构中,所述发光二极管包括:发光器件和形成于所述发光器件上的电极,所述电极为N型电极和P型电极,所述N型电极和P型电极均设有连接端,且所述N型电极和P型电极的连接端均设在所述发光二极管的同一端,所述封装方法包括步骤:
将所述发光二极管插装在所述封装基板结构的插槽中,使所述电极与所述连接金属相连;
在所述封装基板结构上形成透光保护层,所述透光保护层包围所述发光二极管。
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