JP4881003B2 - 放射を発する薄膜半導体チップ - Google Patents
放射を発する薄膜半導体チップ Download PDFInfo
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- JP4881003B2 JP4881003B2 JP2005509779A JP2005509779A JP4881003B2 JP 4881003 B2 JP4881003 B2 JP 4881003B2 JP 2005509779 A JP2005509779 A JP 2005509779A JP 2005509779 A JP2005509779 A JP 2005509779A JP 4881003 B2 JP4881003 B2 JP 4881003B2
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- 239000004065 semiconductor Substances 0.000 title claims description 109
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- 229910052738 indium Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
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- NCGICGYLBXGBGN-UHFFFAOYSA-N 3-morpholin-4-yl-1-oxa-3-azonia-2-azanidacyclopent-3-en-5-imine;hydrochloride Chemical compound Cl.[N-]1OC(=N)C=[N+]1N1CCOCC1 NCGICGYLBXGBGN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
−放射を発生するエピタキシャル層列において支持体部材の方に向いた側に位置する第1の主表面のところに反射層が被着されておりまたは形成されており、この反射層はエピタキシャル層列において発生した電磁放射の少なくとも一部分をこのエピタキシャル層列に反射して戻す。
−エピタキシャル層列は、20μmあるいはそれ以下の領域たとえば10μmの領域にある厚さを有している。
−エピタキシャル層列には、混合構造をもつ少なくとも1つの面を備えた少なくとも1つの半導体層が含まれており、理想的なケースではこの面によりエピタキシャル層列内にほぼエルゴード的な光分布を生じさせ、つまりこの光分布はできるかぎりエルゴード的な確率分散特性を有している。
−最初にエピタキシャル層列は成長基板となるよう成長させられ、ついでエピタキシャル層列がこの成長基板から剥離されて、支持体部材に取り付けられる。
Claims (14)
- 放射を生成する活性層(14)を含むエピタキシャル多層構造体(12)が設けられており、
該多層構造体(12)は、第1の主表面(16)と、該第1の主表面(16)とは反対側に配置され放射を生成する前記活性層(14)において形成された放射を出力結合させる第2の主表面(18)を有する、
放射を発する薄膜半導体チップにおいて、
前記多層構造体(12)の第1の主表面(16)は反射性の層または界面と結合されており、
前記多層構造体(12)の第2の主表面(18)に接する該多層構造体(12)の領域(22)が1次元または2次元で構造形成されており、
前記多層構造体(12)の第2の主表面(18)に接する該多層構造体(12)の領域(22)は複数の凸状の突出部(26)を有しており、
該突出部(26)の高さ(h1)は、放射を生成する前記活性層(14)と該突出部(26)との間に設けられている前記多層構造体(12)の非構造化領域(20)の高さ(h2)以上であり、
前記複数の凸状突出部(26)は、切頭角錐形状または切頭円錐形状または台形の横断面形状を有し、
前記複数の凸状突出部(26)は30°〜70°の傾斜角(β)を有することを特徴とする、
放射を発する薄膜半導体チップ。 - 請求項1記載の半導体チップにおいて、
前記第1の主表面(16)に支持体部材が結合されており、該支持体部材と前記多層構造体との間に前記反射性の層または界面が配置されていることを特徴とする半導体チップ。 - 請求項1記載の半導体チップにおいて、
前記突出部(26)は40°〜50°の傾斜角(β)を有することを特徴とする半導体チップ。 - 請求項1から3のいずれか1項記載の半導体チップにおいて、
前記突出部(26)の高さ(h1)は、前記多層構造体(12)の構造化領域(22)と放射を生成する前記活性層(14)との間隔(h2)の2倍の大きさであることを特徴とする半導体チップ。 - 請求項1から4のいずれか1項記載の半導体チップにおいて、
前記突出部(26)のセルサイズ(d)は、該突出部(26)の高さ(h1)の最大で5倍の大きさであることを特徴とする半導体チップ。 - 請求項5記載の半導体チップにおいて、
前記突出部(26)のセルサイズ(d)は、該突出部(26)の高さ(h1)の最大で3倍の大きさであることを特徴とする半導体チップ。 - 請求項1から6のいずれか1項記載の半導体チップにおいて、
前記多層構造体(12)の第1の主表面(16)と結合された層(28)または界面は、少なくとも70%の反射率を有することを特徴とする半導体チップ。 - 請求項1から6のいずれか1項記載の半導体チップにおいて、
前記多層構造体(12)の第1の主表面(16)と結合された層(28)または界面は、少なくとも85%の反射率を有することを特徴とする半導体チップ。 - 請求項1から8のいずれか1項記載の半導体チップにおいて、
前記多層構造体(12)は該多層構造体(12)の第1の主表面(16)で支持体基板(30)上に、直接または反射性の層(28)を介して被着されていることを特徴とする半導体チップ。 - 請求項9記載の半導体チップにおいて、
前記反射性の層または支持体基板は同時に半導体チップのコンタクト層として用いられることを特徴とする半導体チップ。 - 請求項1から10のいずれか1項記載の半導体チップにおいて、
前記多層構造体(12)の第2の主表面(18)上に透過性の導電層が被着されていることを特徴とする半導体チップ。 - 請求項1から11のいずれか1項記載の半導体チップにおいて、
前記多層構造体(12)の第2の主表面(18)上に透過性の保護層(32)が被着されていることを特徴とする半導体チップ。 - 請求項1から12のいずれか1項記載の半導体チップにおいて、
前記多層構造体(12)にはGaNベースの1つまたは複数の種々の材料が含まれていることを特徴とする半導体チップ。 - 請求項1から12のいずれか1項記載の半導体チップにおいて、
前記多層構造体(12)は、リン化物化合物半導体、ヒ化物化合物半導体、II〜VI族の半導体材料のうち少なくとも1つを含むことを特徴とする半導体チップ。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/DE2003/003222 WO2005041313A1 (de) | 2003-09-26 | 2003-09-26 | Strahlungsemittierender dünnschicht-halbleiterchip |
Publications (2)
Publication Number | Publication Date |
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JP2007507081A JP2007507081A (ja) | 2007-03-22 |
JP4881003B2 true JP4881003B2 (ja) | 2012-02-22 |
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Application Number | Title | Priority Date | Filing Date |
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JP2005509779A Expired - Lifetime JP4881003B2 (ja) | 2003-09-26 | 2003-09-26 | 放射を発する薄膜半導体チップ |
Country Status (5)
Country | Link |
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US (1) | US8604497B2 (ja) |
EP (1) | EP1665398B1 (ja) |
JP (1) | JP4881003B2 (ja) |
CN (1) | CN100499184C (ja) |
WO (1) | WO2005041313A1 (ja) |
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2003
- 2003-09-26 JP JP2005509779A patent/JP4881003B2/ja not_active Expired - Lifetime
- 2003-09-26 WO PCT/DE2003/003222 patent/WO2005041313A1/de active Application Filing
- 2003-09-26 US US10/572,655 patent/US8604497B2/en active Active
- 2003-09-26 EP EP03818889.2A patent/EP1665398B1/de not_active Expired - Lifetime
- 2003-09-26 CN CNB038271141A patent/CN100499184C/zh not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
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EP1665398A1 (de) | 2006-06-07 |
US8604497B2 (en) | 2013-12-10 |
US20080035941A1 (en) | 2008-02-14 |
WO2005041313A1 (de) | 2005-05-06 |
CN100499184C (zh) | 2009-06-10 |
EP1665398B1 (de) | 2014-07-02 |
JP2007507081A (ja) | 2007-03-22 |
CN1839485A (zh) | 2006-09-27 |
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