DE68925634T2 - Lichtemittierendes Element - Google Patents

Lichtemittierendes Element

Info

Publication number
DE68925634T2
DE68925634T2 DE68925634T DE68925634T DE68925634T2 DE 68925634 T2 DE68925634 T2 DE 68925634T2 DE 68925634 T DE68925634 T DE 68925634T DE 68925634 T DE68925634 T DE 68925634T DE 68925634 T2 DE68925634 T2 DE 68925634T2
Authority
DE
Germany
Prior art keywords
light emitting
emitting element
light
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68925634T
Other languages
English (en)
Other versions
DE68925634D1 (de
Inventor
Yutaka Ohashi
Atsuhiko Nitta
Nobuhiro Fukuda
Hiroshi Waki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Chemicals Inc
Original Assignee
Mitsui Toatsu Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63292467A external-priority patent/JPH02139893A/ja
Priority claimed from JP1013983A external-priority patent/JPH02196475A/ja
Priority claimed from JP1026578A external-priority patent/JPH02207488A/ja
Application filed by Mitsui Toatsu Chemicals Inc filed Critical Mitsui Toatsu Chemicals Inc
Publication of DE68925634D1 publication Critical patent/DE68925634D1/de
Application granted granted Critical
Publication of DE68925634T2 publication Critical patent/DE68925634T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/32—Stacked devices having two or more layers, each emitting at different wavelengths

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Devices (AREA)
DE68925634T 1988-11-21 1989-11-21 Lichtemittierendes Element Expired - Fee Related DE68925634T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP63292467A JPH02139893A (ja) 1988-11-21 1988-11-21 発光素子
JP1013983A JPH02196475A (ja) 1989-01-25 1989-01-25 薄膜型発光素子
JP1026578A JPH02207488A (ja) 1989-02-07 1989-02-07 薄膜型発光素子
PCT/JP1989/001181 WO1990005998A1 (en) 1988-11-21 1989-11-21 Light-emitting element

Publications (2)

Publication Number Publication Date
DE68925634D1 DE68925634D1 (de) 1996-03-21
DE68925634T2 true DE68925634T2 (de) 1996-08-22

Family

ID=27280485

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68925634T Expired - Fee Related DE68925634T2 (de) 1988-11-21 1989-11-21 Lichtemittierendes Element

Country Status (5)

Country Link
US (1) US5200668A (de)
EP (1) EP0397889B1 (de)
KR (1) KR950000111B1 (de)
DE (1) DE68925634T2 (de)
WO (1) WO1990005998A1 (de)

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JPH03262170A (ja) * 1990-03-13 1991-11-21 Toshiba Corp 有機／無機接合型半導体素子
US5456988A (en) * 1992-01-31 1995-10-10 Sanyo Electric Co., Ltd. Organic electroluminescent device having improved durability
TW266380B (de) * 1993-03-29 1995-12-21 Seikosya Kk
JP3199913B2 (ja) * 1993-06-16 2001-08-20 株式会社半導体エネルギー研究所 液晶電気光学装置およびその作製方法
GB2288062A (en) * 1994-03-24 1995-10-04 Univ Surrey Forming luminescent silicon material and devices
US5537000A (en) * 1994-04-29 1996-07-16 The Regents, University Of California Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices
JPH08102360A (ja) * 1994-09-29 1996-04-16 Toyota Central Res & Dev Lab Inc 有機無機複合薄膜型電界発光素子
US5747928A (en) * 1994-10-07 1998-05-05 Iowa State University Research Foundation, Inc. Flexible panel display having thin film transistors driving polymer light-emitting diodes
DE4441973C2 (de) * 1994-11-25 2000-01-05 Tuhh Tech Gmbh Lichtwellenleitende Struktur auf einem Substrat
JP3529543B2 (ja) * 1995-04-27 2004-05-24 パイオニア株式会社 有機エレクトロルミネッセンス素子
DE19516922A1 (de) * 1995-05-09 1996-11-14 Bosch Gmbh Robert Elektrolumineszierendes Schichtsystem
DE19532064A1 (de) * 1995-08-31 1997-03-06 Bosch Gmbh Robert Elektrolumineszierendes Schichtsystem
US5796120A (en) * 1995-12-28 1998-08-18 Georgia Tech Research Corporation Tunnel thin film electroluminescent device
US5981092A (en) * 1996-03-25 1999-11-09 Tdk Corporation Organic El device
JP2000508112A (ja) * 1996-04-03 2000-06-27 エコール ポリテクニーク フェデラル ドゥ ローザンヌ エレクトロルミネッセントデバイス
US6433355B1 (en) * 1996-06-05 2002-08-13 International Business Machines Corporation Non-degenerate wide bandgap semiconductors as injection layers and/or contact electrodes for organic electroluminescent devices
DE19625993A1 (de) * 1996-06-28 1998-01-02 Philips Patentverwaltung Organisches elektrolumineszentes Bauteil mit Ladungstransportschicht
JP3724589B2 (ja) * 1996-07-29 2005-12-07 ケンブリッジ ディスプレイ テクノロジー リミテッド エレクトロルミネセンス素子
JPH10162960A (ja) * 1996-11-27 1998-06-19 Tdk Corp 有機ｅｌ発光素子
US5994835A (en) * 1997-01-13 1999-11-30 Xerox Corporation Thin film organic light emitting diode with edge emitter waveguide and electron injection layer
US5958573A (en) * 1997-02-10 1999-09-28 Quantum Energy Technologies Electroluminescent device having a structured particle electron conductor
US6069442A (en) * 1997-09-18 2000-05-30 Eastman Kodak Company Organic electroluminescent device with inorganic electron transporting layer
US6607829B1 (en) 1997-11-13 2003-08-19 Massachusetts Institute Of Technology Tellurium-containing nanocrystalline materials
US6207392B1 (en) * 1997-11-25 2001-03-27 The Regents Of The University Of California Semiconductor nanocrystal probes for biological applications and process for making and using such probes
WO2000001203A1 (fr) * 1998-06-26 2000-01-06 Idemitsu Kosan Co., Ltd. Dispositif luminescent
JP4673947B2 (ja) * 1999-02-15 2011-04-20 出光興産株式会社 有機エレクトロルミネッセンス素子およびその製造方法
JP2001217456A (ja) * 2000-02-03 2001-08-10 Sharp Corp 窒化ガリウム系化合物半導体発光素子
JP4112800B2 (ja) * 2000-12-05 2008-07-02 富士フイルム株式会社 発光素子及びその製造方法
DE10234977A1 (de) * 2002-07-31 2004-02-12 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Dünnschicht-Halbleiterbauelement auf GaN-Basis
EP1388903B1 (de) * 2002-08-09 2016-03-16 Semiconductor Energy Laboratory Co., Ltd. Organische elektrolumineszente Vorrichtung
US7851071B2 (en) 2003-03-13 2010-12-14 Idemitsu Kosan Co., Ltd. Nitrogen-containing heterocycle derivative and organic electroluminescent element using the same
JP2005075868A (ja) * 2003-08-29 2005-03-24 Fujitsu Ltd 蛍光材料、有機エレクトロルミネッセンス素子および有機エレクトロルミネッセンスディスプレイ
JP4131218B2 (ja) * 2003-09-17 2008-08-13 セイコーエプソン株式会社 表示パネル、及び表示装置
US8604497B2 (en) * 2003-09-26 2013-12-10 Osram Opto Semiconductors Gmbh Radiation-emitting thin-film semiconductor chip
KR100682870B1 (ko) * 2004-10-29 2007-02-15 삼성전기주식회사 다층전극 및 이를 구비하는 화합물 반도체 발광소자
US20090015150A1 (en) * 2005-07-15 2009-01-15 Lg Chem, Ltd. Organic light emitting device and method for manufacturing the same
TWI321968B (en) * 2005-07-15 2010-03-11 Lg Chemical Ltd Organic light meitting device and method for manufacturing the same
US20090039775A1 (en) * 2005-09-12 2009-02-12 Idemitsu Kosan Co., Ltd. Conductive laminate and organic el device
JP2009526370A (ja) * 2006-02-09 2009-07-16 キユーデイー・ビジヨン・インコーポレーテツド 半導体ナノ結晶およびドープされた有機材料を含む層を含むデバイスおよび方法
US8835941B2 (en) * 2006-02-09 2014-09-16 Qd Vision, Inc. Displays including semiconductor nanocrystals and methods of making same
WO2007143197A2 (en) * 2006-06-02 2007-12-13 Qd Vision, Inc. Light-emitting devices and displays with improved performance
WO2008085210A2 (en) * 2006-09-12 2008-07-17 Qd Vision, Inc. Electroluminescent display useful for displaying a predetermined pattern
JP5465825B2 (ja) * 2007-03-26 2014-04-09 出光興産株式会社 半導体装置、半導体装置の製造方法及び表示装置
WO2009045341A1 (en) * 2007-09-28 2009-04-09 The Johns Hopkins University Megahertz organic/polymer diodes and methods related thereto
US8629865B2 (en) * 2007-12-14 2014-01-14 Koninklijke Philips N.V. Organic light-emitting device with adjustable charge carrier injection
WO2009123763A2 (en) 2008-04-03 2009-10-08 Qd Vision, Inc. Light-emitting device including quantum dots
US9525148B2 (en) 2008-04-03 2016-12-20 Qd Vision, Inc. Device including quantum dots
WO2010122782A1 (ja) * 2009-04-24 2010-10-28 パナソニック株式会社 有機ｅｌディスプレイおよびその製造方法
KR101723540B1 (ko) * 2010-07-30 2017-04-05 엘지이노텍 주식회사 발광 소자 및 이를 갖는 발광 소자 패키지
JP6041336B2 (ja) * 2012-02-15 2016-12-07 国立大学法人山形大学 有機エレクトロルミネッセンス素子
US9425411B2 (en) * 2012-02-15 2016-08-23 National University Corporation Yamagata University Organic electroluminescent element
KR102323243B1 (ko) * 2015-07-22 2021-11-08 삼성디스플레이 주식회사 유기 발광 소자 및 이를 포함하는 유기 발광 표시 장치
KR200485202Y1 (ko) * 2016-02-12 2017-12-07 김영준 화재 사전 진압 구조의 청소기

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GB1572181A (en) * 1975-08-18 1980-07-23 Ici Ltd Device comprising a thin film of organic materila
US4539507A (en) * 1983-03-25 1985-09-03 Eastman Kodak Company Organic electroluminescent devices having improved power conversion efficiencies
JPS6276576A (ja) * 1985-09-30 1987-04-08 Toshiba Corp 注入型発光素子
JPS6276575A (ja) * 1985-09-30 1987-04-08 Toshiba Corp Ｍｉｓ型発光素子
JP2636341B2 (ja) * 1988-06-09 1997-07-30 日本電気株式会社 有機薄膜ｅｌ素子
JP2666428B2 (ja) * 1988-11-18 1997-10-22 日本電気株式会社 有機薄膜ｅｌ素子
JP2540673B2 (ja) * 1991-07-10 1996-10-09 株式会社テンリュウテクニックス トレイおよび電子部品の供給装置
JPH06155184A (ja) * 1992-11-30 1994-06-03 Nippon Steel Corp 自動嵌合装置
JP2857561B2 (ja) * 1993-02-22 1999-02-17 旭化成電子株式会社 ペリクル
JPH06276576A (ja) * 1993-03-22 1994-09-30 Fujitsu Ten Ltd 機器制御システム

Also Published As

Publication number Publication date
EP0397889B1 (de) 1996-02-07
EP0397889A1 (de) 1990-11-22
KR900702580A (ko) 1990-12-07
KR950000111B1 (ko) 1995-01-09
US5200668A (en) 1993-04-06
EP0397889A4 (en) 1991-11-27
DE68925634D1 (de) 1996-03-21
WO1990005998A1 (en) 1990-05-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: MITSUI CHEMICALS, INC., TOKIO/TOKYO, JP

8339 Ceased/non-payment of the annual fee