JP4507532B2 - 窒化物半導体素子 - Google Patents
窒化物半導体素子 Download PDFInfo
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- JP4507532B2 JP4507532B2 JP2003300714A JP2003300714A JP4507532B2 JP 4507532 B2 JP4507532 B2 JP 4507532B2 JP 2003300714 A JP2003300714 A JP 2003300714A JP 2003300714 A JP2003300714 A JP 2003300714A JP 4507532 B2 JP4507532 B2 JP 4507532B2
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- nitride semiconductor
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- 229910052741 iridium Inorganic materials 0.000 claims description 24
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 24
- 239000010931 gold Substances 0.000 claims description 21
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- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 1
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- 239000007924 injection Substances 0.000 description 1
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- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
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- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- KSOCVFUBQIXVDC-FMQUCBEESA-N p-azophenyltrimethylammonium Chemical compound C1=CC([N+](C)(C)C)=CC=C1\N=N\C1=CC=C([N+](C)(C)C)C=C1 KSOCVFUBQIXVDC-FMQUCBEESA-N 0.000 description 1
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Description
また電極は、前記イリジウムの上にさらにPt、Ti、Zr、Hf、V、Nb、Ta、Mo、Wから選ばれる少なくとも1つが積層されてなることを特徴とする。
また電極の上には、最上に金が積層されたパッド電極を有することを特徴とする。
また前記2層構造全体の膜厚は、500〜1000オングストロームであることを特徴とする。
また窒化物半導体素子は、基板側及び素子の端面側から光が取り出されることを特徴とする。また電極は、前記ロジウムの上に前記イリジウムが積層された後に、300℃以上においてアニーリングされていることを特徴とする。
本発明の窒化物半導体素子は、少なくともp型窒化物半導体層を有する窒化物半導体素子において、p型窒化物半導体層に、少なくともロジウム(Rh)とイリジウム(Ir)とを含有する電極が形成されていることを特徴とする。本発明において、少なくともロジウムとイリジウムとを含有する電極とは、ロジウムとイリジウムとを含有する合金、あるいは層構造のことであり、電極とp型窒化物半導体層とのオーミック接触、電極の反射率などに悪影響を及ぼさない範囲であれば、他の材料を含有することもできる。ロジウム、イリジウムのいずれか一方を含有する電極は、高反射率を有するものの、p型窒化物半導体層との十分なオーミック接触を得られないので、ロジウム、イリジウムの双方を組み合わせて用いる必要がある。このような構成によって得られる電極は、p型窒化物半導体層との良好なオーミック接触を得られると共に、高反射率を有するので、電極における光の吸収が少なくなり、外部量子効率の良い窒化物半導体素子を提供することができる。
井戸層の膜厚は、好ましくは1nm以上30nm以下、より好ましくは2nm以上20nm以下、さらに好ましくは3.5nm以上20nm以下である。1nmより小さいと井戸層として良好に機能せず、30nmより大きいとInAlGaNの4元混晶の結晶性が低下するからである。また、2nm以上では膜厚に大きなむらがなく比較的均一な膜質の層が得られ、20nm以下では結晶欠陥の発生を抑制して結晶成長が可能となる。さらに膜厚を3.5nm以上とすることで出力を向上させることができる。これは井戸層の膜厚を大きくすることで、大電流で駆動させるLDのように多数のキャリア注入に対して、高い発光効率及び内部量子効率により発光再結合がなされるものであり、特に多重量子井戸構造において効果を有する。また、単一量子井戸構造では膜厚を5nm以上とすることで上記と同様に出力を向上させる効果が得られる。また、井戸層の数は特に限定されないが、4以上の場合には井戸層の膜厚を10nm以下として活性層の膜厚を低く抑えることが好ましい。活性層を構成する各層の膜厚が厚くなると、活性層全体の膜厚が厚くなりVfの上昇を招くからである。また、障壁層は、井戸層の場合と同様に、好ましくはp型不純物又はn型不純物がドープされているか又はアンドープであること、より好ましくはn型不純物がドープされているか又はアンドープであることである。例えば、障壁層中にn型不純物をドープする場合、その濃度は少なくとも5×1016/cm3以上が必要である。例えば、LEDでは、5×1016/cm3以上2×1018/cm3以下が好ましい。また、高出力のLEDやLDでは、5×1017/cm3以上1×1020/cm3以下、より好ましくは1×1018/cm3以上5×1019/cm3以下である。この場合、井戸層はn型不純物を実質的に含有しないか、あるいはアンドープで成長させることが好ましい。また、障壁層にn型不純物をドープする場合、活性層内のすべての障壁層にドープしても良く、あるいは、一部をドープとし一部をアンドープとすることもできる。ここで、一部の障壁層にn型不純物をドープする場合、活性層内でn型層側に配置された障壁層にドープすることが好ましい。
まず基板1上に少なくともn型窒化物半導体層、活性層、p型窒化物半導体層を有する窒化物半導体20を成長させる。その後、p型窒化物半導体層上に前記p電極10を形成する。p電極を矩形状や縞状、正方形、格子状、ドット状、菱形、平行四辺形、メッシュ形状、ストライプ形状、網目状、格子状の1つから複数に分岐した枝状等にパターン形成することで光の取り出し効率を上げることができる。好ましくは中央部には格子状、その外周を2つのL字で囲む形状とする。これによって大電流の投入が可能となる。
本実施の形態において、赤味を帯びた光を発光する蛍光体として、特に窒化物系蛍光体を使用するが、本発明においては、上述したYAG系蛍光体と赤色系の光を発光可能な蛍光体とを備える発光装置とすることも可能である。このような赤色系の光を発光可能な蛍光体は、波長が400〜600nmの光によって励起されて発光する蛍光体であり、例えば、Y2O2S:Eu、La2O2S:Eu、CaS:Eu、SrS:Eu、ZnS:Mn、ZnCdS:Ag,Al、ZnCdS:Cu,Al等が挙げられる。このようにYAG系蛍光体とともに赤色系の光を発光可能な蛍光体を使用することにより発光装置の演色性を向上させることが可能である。
以上のような蛍光体を選択することで、種々の発光波長を持った光取り出し効率の高い発光素子を得ることができる。
以下、図1に示す発光ダイオード素子を元に実施例1について説明する。
なお、本発明はこれに限定されるものではなく、p型窒化物半導体層に電極を形成する全ての窒化物半導体素子(レーザダイオード、太陽電池、光センサ、トランジスタ、パワーデバイスなど)に適用することができる。
実施例1において、図6Aに示すようにp電極10に開口部を形成する他は、同様にして発光ダイオード素子を得た。得られた素子は、If20mAにおいて、Vf3.5Vであり、p型窒化物半導体層と電極との良好なオーミック接触が得られた。発光出力は、電極の開口部を介して外部に光が取り出されるので実施例1と比較すると約20%増加していた。
実施例1において、p電極10として、NiとAuとを200オングストロームの膜厚で積層する他は、同様にして発光ダイオード素子を得た。得られた素子は、p電極10が透光性を有している。発光出力は、電極における光の吸収により実施例1と比較すると約20%減少していた。
[比較例2]
実施例1において、p電極10として、NiとPtとを200オングストロームの膜厚で積層する他は、同様にして発光ダイオード素子を得た。得られた素子は、p電極10が透光性を有している。発光出力は、電極における光の吸収により実施例1と比較すると約20%減少していた。
[比較例3]
実施例1において、p電極10として、Rhのみを400オングストロームの膜厚で積層する他は、同様にして発光ダイオード素子を得た。得られた素子は、p電極10が透光性を有している。発光出力は、電極における光の吸収により実施例1と比較すると同等であったが、Vfが約0.1V上昇した。
Claims (6)
- 少なくともn型窒化物半導体層とp型窒化物半導体層とを有する窒化物半導体素子において、前記p型窒化物半導体層に、少なくともロジウムとイリジウムとを含有する電極が形成されており、
前記電極は、前記p型窒化物半導体層に接して前記ロジウムが積層され、その上に前記イリジウムが積層された少なくとも2層構造を有し、
前記ロジウムの膜厚は10〜1000オングストロームであり、
前記電極は、前記ロジウムの上に前記イリジウムが積層された後に、400℃〜650℃の範囲においてアニーリングされていることを特徴とする窒化物半導体素子。 - 前記イリジウムの膜厚が10〜1000オングストロームであることを特徴とする請求項1に記載の窒化物半導体素子。
- 前記電極は、前記イリジウムの上にさらにPt、Ti、Zr、Hf、V、Nb、Ta、Mo、Wから選ばれる少なくとも1つが積層されてなることを特徴とする請求項1又は2に記載の窒化物半導体素子。
- 前記電極の上には、最上に金が積層されたパッド電極を有することを特徴とする請求項1乃至3のいずれかに記載の窒化物半導体素子。
- 前記2層構造全体の膜厚は、500〜1000オングストロームであることを特徴とする請求項1乃至4のいずれかに記載の窒化物半導体素子。
- 前記窒化物半導体素子は、基板側及び素子の端面側から光が取り出されることを特徴とする請求項1乃至5のいずれかに記載の窒化物半導体素子。
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