ATE557419T1 - Verfahren zur herstellung eines halbleiterbauelements - Google Patents
Verfahren zur herstellung eines halbleiterbauelementsInfo
- Publication number
- ATE557419T1 ATE557419T1 AT03710424T AT03710424T ATE557419T1 AT E557419 T1 ATE557419 T1 AT E557419T1 AT 03710424 T AT03710424 T AT 03710424T AT 03710424 T AT03710424 T AT 03710424T AT E557419 T1 ATE557419 T1 AT E557419T1
- Authority
- AT
- Austria
- Prior art keywords
- conductive portion
- producing
- semiconductor component
- insulating layer
- depression
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
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- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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- H01L2224/13001—Core members of the bump connector
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- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
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- H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
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- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
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- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
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- H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
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- H01L2924/013—Alloys
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- H01L2924/049—Nitrides composed of metals from groups of the periodic table
- H01L2924/0495—5th Group
- H01L2924/04953—TaN
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002076307 | 2002-03-19 | ||
JP2003007276 | 2003-01-15 | ||
PCT/JP2003/003301 WO2003079430A1 (en) | 2002-03-19 | 2003-03-19 | Semiconductor device and its manufacturing method, circuit board and electronic apparatus |
Publications (1)
Publication Number | Publication Date |
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ATE557419T1 true ATE557419T1 (de) | 2012-05-15 |
Family
ID=28043774
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT03710424T ATE557419T1 (de) | 2002-03-19 | 2003-03-19 | Verfahren zur herstellung eines halbleiterbauelements |
Country Status (8)
Country | Link |
---|---|
US (1) | US6841849B2 (de) |
EP (1) | EP1391923B1 (de) |
JP (1) | JP4129643B2 (de) |
KR (1) | KR100512817B1 (de) |
CN (1) | CN1279605C (de) |
AT (1) | ATE557419T1 (de) |
TW (1) | TW594972B (de) |
WO (1) | WO2003079430A1 (de) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6809421B1 (en) * | 1996-12-02 | 2004-10-26 | Kabushiki Kaisha Toshiba | Multichip semiconductor device, chip therefor and method of formation thereof |
JP4110390B2 (ja) | 2002-03-19 | 2008-07-02 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
JP4081666B2 (ja) * | 2002-09-24 | 2008-04-30 | セイコーエプソン株式会社 | 半導体装置及びその製造方法、回路基板並びに電子機器 |
JP2004297019A (ja) * | 2003-03-28 | 2004-10-21 | Seiko Epson Corp | 半導体装置、回路基板及び電子機器 |
JP3646720B2 (ja) * | 2003-06-19 | 2005-05-11 | セイコーエプソン株式会社 | 半導体装置及びその製造方法、回路基板並びに電子機器 |
JP3646719B2 (ja) * | 2003-06-19 | 2005-05-11 | セイコーエプソン株式会社 | 半導体装置及びその製造方法、回路基板並びに電子機器 |
DE10342559B3 (de) * | 2003-09-15 | 2005-04-14 | Infineon Technologies Ag | Randstruktur eines Leistungshalbleiterbauelementes und ihr Herstellungsverfahren |
US8084866B2 (en) | 2003-12-10 | 2011-12-27 | Micron Technology, Inc. | Microelectronic devices and methods for filling vias in microelectronic devices |
JP4706180B2 (ja) * | 2003-12-22 | 2011-06-22 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
JP3698160B2 (ja) * | 2004-01-09 | 2005-09-21 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
US20050247894A1 (en) | 2004-05-05 | 2005-11-10 | Watkins Charles M | Systems and methods for forming apertures in microfeature workpieces |
JP2005353682A (ja) * | 2004-06-08 | 2005-12-22 | Seiko Epson Corp | 回路素子の製造方法、電子素子の製造方法、回路基板、電子機器、および電気光学装置 |
US7232754B2 (en) | 2004-06-29 | 2007-06-19 | Micron Technology, Inc. | Microelectronic devices and methods for forming interconnects in microelectronic devices |
US7083425B2 (en) | 2004-08-27 | 2006-08-01 | Micron Technology, Inc. | Slanted vias for electrical circuits on circuit boards and other substrates |
US7300857B2 (en) | 2004-09-02 | 2007-11-27 | Micron Technology, Inc. | Through-wafer interconnects for photoimager and memory wafers |
TWI250834B (en) * | 2004-11-03 | 2006-03-01 | Phoenix Prec Technology Corp | Method for fabricating electrical connections of circuit board |
JP4170313B2 (ja) * | 2005-05-24 | 2008-10-22 | シャープ株式会社 | 半導体装置の製造方法 |
US7795134B2 (en) * | 2005-06-28 | 2010-09-14 | Micron Technology, Inc. | Conductive interconnect structures and formation methods using supercritical fluids |
US7863187B2 (en) * | 2005-09-01 | 2011-01-04 | Micron Technology, Inc. | Microfeature workpieces and methods for forming interconnects in microfeature workpieces |
US7622377B2 (en) * | 2005-09-01 | 2009-11-24 | Micron Technology, Inc. | Microfeature workpiece substrates having through-substrate vias, and associated methods of formation |
US7262134B2 (en) | 2005-09-01 | 2007-08-28 | Micron Technology, Inc. | Microfeature workpieces and methods for forming interconnects in microfeature workpieces |
TWI287273B (en) * | 2006-01-25 | 2007-09-21 | Advanced Semiconductor Eng | Three dimensional package and method of making the same |
TWI293499B (en) | 2006-01-25 | 2008-02-11 | Advanced Semiconductor Eng | Three dimensional package and method of making the same |
KR101478810B1 (ko) | 2006-07-28 | 2015-01-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 축전 장치 |
US7629249B2 (en) | 2006-08-28 | 2009-12-08 | Micron Technology, Inc. | Microfeature workpieces having conductive interconnect structures formed by chemically reactive processes, and associated systems and methods |
US7902643B2 (en) * | 2006-08-31 | 2011-03-08 | Micron Technology, Inc. | Microfeature workpieces having interconnects and conductive backplanes, and associated systems and methods |
JP2008166652A (ja) * | 2007-01-05 | 2008-07-17 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置の製造方法 |
JP4265668B2 (ja) * | 2007-03-08 | 2009-05-20 | ソニー株式会社 | 回路基板の製造方法および回路基板 |
JP4534096B2 (ja) * | 2007-04-12 | 2010-09-01 | ローム株式会社 | 半導体チップおよびその製造方法、ならびに半導体装置 |
SG150410A1 (en) | 2007-08-31 | 2009-03-30 | Micron Technology Inc | Partitioned through-layer via and associated systems and methods |
US7884015B2 (en) | 2007-12-06 | 2011-02-08 | Micron Technology, Inc. | Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods |
IT1391239B1 (it) | 2008-08-08 | 2011-12-01 | Milano Politecnico | Metodo per la formazione di bump in substrati con through via |
KR101215648B1 (ko) * | 2011-02-11 | 2012-12-26 | 에스케이하이닉스 주식회사 | 반도체 칩 및 그 제조방법 |
US20150262911A1 (en) * | 2014-03-14 | 2015-09-17 | International Business Machines Corporation | Tsv with end cap, method and 3d integrated circuit |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
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US117705A (en) * | 1871-08-01 | Improvement in machines for removing runners from strawberry vines | ||
JPS607148A (ja) * | 1983-06-24 | 1985-01-14 | Nec Corp | 半導体装置の製造方法 |
JPS607149A (ja) * | 1983-06-24 | 1985-01-14 | Nec Corp | 半導体装置の製造方法 |
JPH0215652A (ja) * | 1988-07-01 | 1990-01-19 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
US4978639A (en) * | 1989-01-10 | 1990-12-18 | Avantek, Inc. | Method for the simultaneous formation of via-holes and wraparound plating on semiconductor chips |
DE4314907C1 (de) * | 1993-05-05 | 1994-08-25 | Siemens Ag | Verfahren zur Herstellung von vertikal miteinander elektrisch leitend kontaktierten Halbleiterbauelementen |
EP2270846A3 (de) * | 1996-10-29 | 2011-12-21 | ALLVIA, Inc. | Integrierte Schaltungen und Verfahren zu ihrer Herstellung |
JP3184493B2 (ja) * | 1997-10-01 | 2001-07-09 | 松下電子工業株式会社 | 電子装置の製造方法 |
JP3792954B2 (ja) * | 1999-08-10 | 2006-07-05 | 株式会社東芝 | 半導体装置の製造方法 |
US6322903B1 (en) * | 1999-12-06 | 2001-11-27 | Tru-Si Technologies, Inc. | Package of integrated circuits and vertical integration |
JP3778256B2 (ja) * | 2000-02-28 | 2006-05-24 | セイコーエプソン株式会社 | 半導体装置及びその製造方法、回路基板並びに電子機器 |
JP2001326325A (ja) * | 2000-05-16 | 2001-11-22 | Seiko Epson Corp | 半導体装置及びその製造方法 |
-
2003
- 2003-03-19 JP JP2003577327A patent/JP4129643B2/ja not_active Expired - Lifetime
- 2003-03-19 EP EP03710424A patent/EP1391923B1/de not_active Expired - Lifetime
- 2003-03-19 CN CNB03800707XA patent/CN1279605C/zh not_active Expired - Lifetime
- 2003-03-19 AT AT03710424T patent/ATE557419T1/de active
- 2003-03-19 KR KR10-2003-7015901A patent/KR100512817B1/ko active IP Right Grant
- 2003-03-19 WO PCT/JP2003/003301 patent/WO2003079430A1/ja active Application Filing
- 2003-03-19 TW TW092106052A patent/TW594972B/zh not_active IP Right Cessation
- 2003-11-10 US US10/703,570 patent/US6841849B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP4129643B2 (ja) | 2008-08-06 |
TW200305992A (en) | 2003-11-01 |
KR100512817B1 (ko) | 2005-09-06 |
EP1391923A4 (de) | 2005-06-15 |
TW594972B (en) | 2004-06-21 |
US6841849B2 (en) | 2005-01-11 |
EP1391923A1 (de) | 2004-02-25 |
US20040155330A1 (en) | 2004-08-12 |
JPWO2003079430A1 (ja) | 2005-07-21 |
KR20040012897A (ko) | 2004-02-11 |
EP1391923B1 (de) | 2012-05-09 |
CN1533604A (zh) | 2004-09-29 |
WO2003079430A1 (en) | 2003-09-25 |
CN1279605C (zh) | 2006-10-11 |
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