DE60314640D1 - Methoden zur abscheidung von atomschichten - Google Patents
Methoden zur abscheidung von atomschichtenInfo
- Publication number
- DE60314640D1 DE60314640D1 DE60314640T DE60314640T DE60314640D1 DE 60314640 D1 DE60314640 D1 DE 60314640D1 DE 60314640 T DE60314640 T DE 60314640T DE 60314640 T DE60314640 T DE 60314640T DE 60314640 D1 DE60314640 D1 DE 60314640D1
- Authority
- DE
- Germany
- Prior art keywords
- gas
- substrate
- monolayer
- pulses
- deposition chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
- Led Devices (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US208314 | 1988-06-15 | ||
US10/208,314 US7150789B2 (en) | 2002-07-29 | 2002-07-29 | Atomic layer deposition methods |
PCT/US2003/022804 WO2004011693A1 (en) | 2002-07-29 | 2003-07-21 | Atomic deposition layer methods |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60314640D1 true DE60314640D1 (de) | 2007-08-09 |
DE60314640T2 DE60314640T2 (de) | 2008-03-06 |
Family
ID=30770547
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60314640T Expired - Lifetime DE60314640T2 (de) | 2002-07-29 | 2003-07-21 | Methoden zur abscheidung von atomschichten |
Country Status (9)
Country | Link |
---|---|
US (2) | US7150789B2 (de) |
EP (2) | EP1840241B1 (de) |
JP (1) | JP4232105B2 (de) |
KR (1) | KR100719643B1 (de) |
CN (1) | CN100485084C (de) |
AT (1) | ATE365817T1 (de) |
AU (1) | AU2003261211A1 (de) |
DE (1) | DE60314640T2 (de) |
WO (1) | WO2004011693A1 (de) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7150789B2 (en) | 2002-07-29 | 2006-12-19 | Micron Technology, Inc. | Atomic layer deposition methods |
US6753271B2 (en) | 2002-08-15 | 2004-06-22 | Micron Technology, Inc. | Atomic layer deposition methods |
US6890596B2 (en) | 2002-08-15 | 2005-05-10 | Micron Technology, Inc. | Deposition methods |
US6673701B1 (en) | 2002-08-27 | 2004-01-06 | Micron Technology, Inc. | Atomic layer deposition methods |
WO2005016364A1 (en) * | 2003-08-14 | 2005-02-24 | Guthy-Renker Corporation | Skin care composition including hexapeptide complexes and methods of their manufacture |
KR100587687B1 (ko) * | 2004-07-27 | 2006-06-08 | 삼성전자주식회사 | 원자층 증착법을 이용한 박막 형성 방법과 그 장치 |
US8158488B2 (en) * | 2004-08-31 | 2012-04-17 | Micron Technology, Inc. | Method of increasing deposition rate of silicon dioxide on a catalyst |
JP4355672B2 (ja) * | 2005-03-15 | 2009-11-04 | 三井造船株式会社 | 薄膜形成方法 |
US8486845B2 (en) * | 2005-03-21 | 2013-07-16 | Tokyo Electron Limited | Plasma enhanced atomic layer deposition system and method |
DE502006007655D1 (de) * | 2005-10-25 | 2010-09-23 | Evonik Degussa Gmbh | Präparate umfassend hyperverzweigte polymere |
US20080119098A1 (en) * | 2006-11-21 | 2008-05-22 | Igor Palley | Atomic layer deposition on fibrous materials |
EP1982698A1 (de) * | 2007-04-18 | 2008-10-22 | Evonik Degussa GmbH | Präparate zur gesteuerten Freisetzung von bioaktiven Naturstoffen |
CN100590803C (zh) | 2007-06-22 | 2010-02-17 | 中芯国际集成电路制造(上海)有限公司 | 原子层沉积方法以及形成的半导体器件 |
US7928019B2 (en) * | 2007-08-10 | 2011-04-19 | Micron Technology, Inc. | Semiconductor processing |
DE102008042923A1 (de) | 2008-10-17 | 2010-04-22 | Evonik Goldschmidt Gmbh | Präparate zur gesteuerten Freisetzung von Wirkstoffen |
US8518486B2 (en) | 2010-05-12 | 2013-08-27 | Micron Technology, Inc. | Methods of forming and utilizing rutile-type titanium oxide |
KR101538372B1 (ko) * | 2012-12-13 | 2015-07-22 | 엘아이지인베니아 주식회사 | 원자층 증착장치 |
EP2770526B1 (de) | 2013-02-22 | 2018-10-03 | IMEC vzw | Sauerstoff-Monoschicht auf einem Halbleiter |
US9583337B2 (en) | 2014-03-26 | 2017-02-28 | Ultratech, Inc. | Oxygen radical enhanced atomic-layer deposition using ozone plasma |
KR102454894B1 (ko) | 2015-11-06 | 2022-10-14 | 삼성전자주식회사 | 물질막, 이를 포함하는 반도체 소자, 및 이들의 제조 방법 |
US20170241019A1 (en) | 2016-02-22 | 2017-08-24 | Ultratech, Inc. | Pe-ald methods with reduced quartz-based contamination |
US20170260629A1 (en) | 2016-03-08 | 2017-09-14 | Ultratech, Inc. | Quartz crystal microbalance assembly for ALD systems |
KR102514043B1 (ko) | 2016-07-18 | 2023-03-24 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
CN106048561B (zh) * | 2016-08-17 | 2019-02-12 | 武汉华星光电技术有限公司 | 一种原子层沉积装置及方法 |
US10844488B2 (en) | 2017-01-27 | 2020-11-24 | Veeco Instruments Inc. | Chuck systems and methods having enhanced electrical isolation for substrate-biased ALD |
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US6482262B1 (en) * | 1959-10-10 | 2002-11-19 | Asm Microchemistry Oy | Deposition of transition metal carbides |
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KR100385946B1 (ko) * | 1999-12-08 | 2003-06-02 | 삼성전자주식회사 | 원자층 증착법을 이용한 금속층 형성방법 및 그 금속층을장벽금속층, 커패시터의 상부전극, 또는 하부전극으로구비한 반도체 소자 |
US6287965B1 (en) * | 1997-07-28 | 2001-09-11 | Samsung Electronics Co, Ltd. | Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor |
US6482476B1 (en) * | 1997-10-06 | 2002-11-19 | Shengzhong Frank Liu | Low temperature plasma enhanced CVD ceramic coating process for metal, alloy and ceramic materials |
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US6613587B1 (en) | 2002-04-11 | 2003-09-02 | Micron Technology, Inc. | Method of replacing at least a portion of a semiconductor substrate deposition chamber liner |
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US7150789B2 (en) * | 2002-07-29 | 2006-12-19 | Micron Technology, Inc. | Atomic layer deposition methods |
US6753271B2 (en) * | 2002-08-15 | 2004-06-22 | Micron Technology, Inc. | Atomic layer deposition methods |
US6673701B1 (en) * | 2002-08-27 | 2004-01-06 | Micron Technology, Inc. | Atomic layer deposition methods |
EP1398831A3 (de) * | 2002-09-13 | 2008-02-20 | Shipley Co. L.L.C. | Bildung von Luftspalten |
-
2002
- 2002-07-29 US US10/208,314 patent/US7150789B2/en not_active Expired - Fee Related
-
2003
- 2003-07-21 EP EP07007579A patent/EP1840241B1/de not_active Expired - Lifetime
- 2003-07-21 KR KR1020057000683A patent/KR100719643B1/ko active IP Right Grant
- 2003-07-21 AU AU2003261211A patent/AU2003261211A1/en not_active Abandoned
- 2003-07-21 JP JP2004524677A patent/JP4232105B2/ja not_active Expired - Lifetime
- 2003-07-21 AT AT03771691T patent/ATE365817T1/de not_active IP Right Cessation
- 2003-07-21 DE DE60314640T patent/DE60314640T2/de not_active Expired - Lifetime
- 2003-07-21 CN CNB038182696A patent/CN100485084C/zh not_active Expired - Lifetime
- 2003-07-21 WO PCT/US2003/022804 patent/WO2004011693A1/en active IP Right Grant
- 2003-07-21 EP EP03771691A patent/EP1532292B1/de not_active Expired - Lifetime
-
2004
- 2004-09-30 US US10/956,925 patent/US7128787B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20040016394A1 (en) | 2004-01-29 |
JP4232105B2 (ja) | 2009-03-04 |
KR100719643B1 (ko) | 2007-05-17 |
US7150789B2 (en) | 2006-12-19 |
US20050039674A1 (en) | 2005-02-24 |
CN1671882A (zh) | 2005-09-21 |
EP1532292B1 (de) | 2007-06-27 |
JP2005533183A (ja) | 2005-11-04 |
AU2003261211A1 (en) | 2004-02-16 |
CN100485084C (zh) | 2009-05-06 |
KR20050028022A (ko) | 2005-03-21 |
US7128787B2 (en) | 2006-10-31 |
ATE365817T1 (de) | 2007-07-15 |
EP1532292A1 (de) | 2005-05-25 |
EP1840241A2 (de) | 2007-10-03 |
EP1840241A3 (de) | 2008-11-12 |
DE60314640T2 (de) | 2008-03-06 |
EP1840241B1 (de) | 2012-06-13 |
WO2004011693A1 (en) | 2004-02-05 |
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