ATE427558T1 - Atomschichtenabscheidungsverfahren und vorrichtung - Google Patents

Atomschichtenabscheidungsverfahren und vorrichtung

Info

Publication number
ATE427558T1
ATE427558T1 AT03808098T AT03808098T ATE427558T1 AT E427558 T1 ATE427558 T1 AT E427558T1 AT 03808098 T AT03808098 T AT 03808098T AT 03808098 T AT03808098 T AT 03808098T AT E427558 T1 ATE427558 T1 AT E427558T1
Authority
AT
Austria
Prior art keywords
atomic layer
layer deposition
chamber
individual
deposition method
Prior art date
Application number
AT03808098T
Other languages
English (en)
Inventor
Gurtej Sandhu
Trung Doan
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE427558T1 publication Critical patent/ATE427558T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6732—Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Vapour Deposition (AREA)
AT03808098T 2002-10-08 2003-09-26 Atomschichtenabscheidungsverfahren und vorrichtung ATE427558T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/267,467 US6916374B2 (en) 2002-10-08 2002-10-08 Atomic layer deposition methods and atomic layer deposition tools

Publications (1)

Publication Number Publication Date
ATE427558T1 true ATE427558T1 (de) 2009-04-15

Family

ID=32042828

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03808098T ATE427558T1 (de) 2002-10-08 2003-09-26 Atomschichtenabscheidungsverfahren und vorrichtung

Country Status (11)

Country Link
US (2) US6916374B2 (de)
EP (1) EP1556886B1 (de)
JP (1) JP2005539146A (de)
KR (1) KR100622188B1 (de)
CN (1) CN100346448C (de)
AT (1) ATE427558T1 (de)
AU (1) AU2003277064A1 (de)
DE (1) DE60326979D1 (de)
SG (1) SG167668A1 (de)
TW (1) TWI234812B (de)
WO (1) WO2004034443A1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050056219A1 (en) * 2003-09-16 2005-03-17 Tokyo Electron Limited Formation of a metal-containing film by sequential gas exposure in a batch type processing system
US7789319B2 (en) * 2006-05-17 2010-09-07 Micron Technology, Inc. System and method for recirculating fluid supply for an injector for a semiconductor fabrication chamber
US7692222B2 (en) * 2006-11-07 2010-04-06 Raytheon Company Atomic layer deposition in the formation of gate structures for III-V semiconductor
US11136667B2 (en) * 2007-01-08 2021-10-05 Eastman Kodak Company Deposition system and method using a delivery head separated from a substrate by gas pressure
US20080241384A1 (en) * 2007-04-02 2008-10-02 Asm Genitech Korea Ltd. Lateral flow deposition apparatus and method of depositing film by using the apparatus
US7816278B2 (en) * 2008-03-28 2010-10-19 Tokyo Electron Limited In-situ hybrid deposition of high dielectric constant films using atomic layer deposition and chemical vapor deposition
US10041169B2 (en) * 2008-05-27 2018-08-07 Picosun Oy System and method for loading a substrate holder carrying a batch of vertically placed substrates into an atomic layer deposition reactor
WO2009148913A2 (en) * 2008-06-02 2009-12-10 Mattson Technology, Inc. Process and system for varying the exposure to a chemical ambient in a process chamber
US8282334B2 (en) * 2008-08-01 2012-10-09 Picosun Oy Atomic layer deposition apparatus and loading methods
FI123487B (fi) * 2009-06-15 2013-05-31 Beneq Oy Laitteisto atomikerroskasvatuksen suorittamiseksi substraatin pinnalle
FI20115073A0 (fi) 2011-01-26 2011-01-26 Beneq Oy Laitteisto, menetelmä ja reaktiokammio
JP5750281B2 (ja) * 2011-03-07 2015-07-15 株式会社アルバック 真空一貫基板処理装置及び成膜方法
CN102618848A (zh) * 2012-05-04 2012-08-01 嘉兴科民电子设备技术有限公司 一种立式原子层沉积设备
TW201413780A (zh) * 2012-09-24 2014-04-01 Eugene Technology Co Ltd 煙氣移除設備及基板處理設備
KR101507557B1 (ko) * 2013-04-25 2015-04-07 주식회사 엔씨디 대면적 기판용 수평형 원자층 증착장치
JP2015137415A (ja) * 2014-01-24 2015-07-30 エヌシーディ・カンパニー・リミテッドＮｃｄ Ｃｏ．，Ｌｔｄ． 大面積原子層蒸着装置
US9881820B2 (en) * 2015-10-22 2018-01-30 Lam Research Corporation Front opening ring pod
DE102015223807A1 (de) * 2015-12-01 2017-06-01 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe mit epitaktischer Schicht in einer Abscheidekammer, Vorrichtung zur Herstellung einer Halbleiterscheibe mit epitaktischer Schicht und Halbleiterscheibe mit epitaktischer Schicht
CN109518165B (zh) * 2018-07-02 2021-06-04 南京原磊纳米材料有限公司 一种原子层沉积批量生产设备
CN109371383A (zh) * 2018-12-25 2019-02-22 南京爱通智能科技有限公司 一种适用于超大规模原子层沉积设备的载具
FI129502B (en) * 2019-04-25 2022-03-31 Beneq Oy Feedstock supply cabinet

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3748528A (en) * 1972-03-23 1973-07-24 Ikor Inc Microwave generator
US4104558A (en) * 1976-11-15 1978-08-01 Gte Laboratories Incorporated Tunable radio frequency pulse generators
US4760311A (en) * 1986-06-15 1988-07-26 Westinghouse Electric Corp. Sub-nanosecond rise time multi-megavolt pulse generator
DE3622352C1 (de) * 1986-07-03 1987-12-03 Dornier System Gmbh Funkenstrecke mit Elektrodenspitzen unterschiedlicher Geometrie
CH673357A5 (de) * 1987-03-02 1990-02-28 Bbc Brown Boveri & Cie
US4875022A (en) * 1988-03-28 1989-10-17 The United States Of America As Represented By The Secretary Of The Army High power microwave expander for producing fast rise time pulses
DE58907951D1 (de) * 1989-01-18 1994-07-28 Siemens Ag Funkenstreckenbauelement für geschirmte Anordnung.
JPH09104982A (ja) * 1995-08-05 1997-04-22 Kokusai Electric Co Ltd 基板処理装置
KR100310249B1 (ko) 1995-08-05 2001-12-17 엔도 마코토 기판처리장치
JP2923748B2 (ja) * 1996-01-26 1999-07-26 株式会社半導体エネルギー研究所 被膜作製方法
US5855675A (en) 1997-03-03 1999-01-05 Genus, Inc. Multipurpose processing chamber for chemical vapor deposition processes
US6174377B1 (en) 1997-03-03 2001-01-16 Genus, Inc. Processing chamber for atomic layer deposition processes
US5879459A (en) 1997-08-29 1999-03-09 Genus, Inc. Vertically-stacked process reactor and cluster tool system for atomic layer deposition
US5835545A (en) * 1997-07-30 1998-11-10 The United States Of America As Represented By The Secretary Of The Air Force Compact intense radiation system
US6551399B1 (en) * 2000-01-10 2003-04-22 Genus Inc. Fully integrated process for MIM capacitors using atomic layer deposition
US20020195056A1 (en) 2000-05-12 2002-12-26 Gurtej Sandhu Versatile atomic layer deposition apparatus
US7253076B1 (en) 2000-06-08 2007-08-07 Micron Technologies, Inc. Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers
KR100332313B1 (ko) * 2000-06-24 2002-04-12 서성기 Ａｌｄ 박막증착장치 및 증착방법
US6458416B1 (en) 2000-07-19 2002-10-01 Micron Technology, Inc. Deposition methods
KR100458982B1 (ko) * 2000-08-09 2004-12-03 주성엔지니어링(주) 회전형 가스분사기를 가지는 반도체소자 제조장치 및 이를이용한 박막증착방법
US6420230B1 (en) 2000-08-31 2002-07-16 Micron Technology, Inc. Capacitor fabrication methods and capacitor constructions
US6541353B1 (en) 2000-08-31 2003-04-01 Micron Technology, Inc. Atomic layer doping apparatus and method
KR100378186B1 (ko) 2000-10-19 2003-03-29 삼성전자주식회사 원자층 증착법으로 형성된 박막이 채용된 반도체 소자 및그 제조방법
US6534357B1 (en) 2000-11-09 2003-03-18 Micron Technology, Inc. Methods for forming conductive structures and structures regarding same
US6355561B1 (en) 2000-11-21 2002-03-12 Micron Technology, Inc. ALD method to improve surface coverage
US6765178B2 (en) * 2000-12-29 2004-07-20 Applied Materials, Inc. Chamber for uniform substrate heating
US6653154B2 (en) 2001-03-15 2003-11-25 Micron Technology, Inc. Method of forming self-aligned, trenchless mangetoresistive random-access memory (MRAM) structure with sidewall containment of MRAM structure
US6551893B1 (en) 2001-11-27 2003-04-22 Micron Technology, Inc. Atomic layer deposition of capacitor dielectric
US6787185B2 (en) 2002-02-25 2004-09-07 Micron Technology, Inc. Deposition methods for improved delivery of metastable species
US6730367B2 (en) 2002-03-05 2004-05-04 Micron Technology, Inc. Atomic layer deposition method with point of use generated reactive gas species
US6613587B1 (en) 2002-04-11 2003-09-02 Micron Technology, Inc. Method of replacing at least a portion of a semiconductor substrate deposition chamber liner
US6620253B1 (en) 2002-04-11 2003-09-16 Micron Technology, Inc. Engagement mechanism for semiconductor substrate deposition process kit hardware
US6743736B2 (en) 2002-04-11 2004-06-01 Micron Technology, Inc. Reactive gaseous deposition precursor feed apparatus
US7589029B2 (en) 2002-05-02 2009-09-15 Micron Technology, Inc. Atomic layer deposition and conversion
US6753271B2 (en) 2002-08-15 2004-06-22 Micron Technology, Inc. Atomic layer deposition methods
US6673701B1 (en) 2002-08-27 2004-01-06 Micron Technology, Inc. Atomic layer deposition methods
US20040040503A1 (en) 2002-08-29 2004-03-04 Micron Technology, Inc. Micromachines for delivering precursors and gases for film deposition
US20040040502A1 (en) 2002-08-29 2004-03-04 Micron Technology, Inc. Micromachines for delivering precursors and gases for film deposition

Also Published As

Publication number Publication date
WO2004034443A1 (en) 2004-04-22
CN1689139A (zh) 2005-10-26
SG167668A1 (en) 2011-01-28
AU2003277064A1 (en) 2004-05-04
TW200414315A (en) 2004-08-01
US6916374B2 (en) 2005-07-12
CN100346448C (zh) 2007-10-31
KR100622188B1 (ko) 2006-09-19
EP1556886B1 (de) 2009-04-01
US20050245093A1 (en) 2005-11-03
DE60326979D1 (de) 2009-05-14
US7279041B2 (en) 2007-10-09
TWI234812B (en) 2005-06-21
EP1556886A1 (de) 2005-07-27
JP2005539146A (ja) 2005-12-22
US20040065258A1 (en) 2004-04-08
KR20050057618A (ko) 2005-06-16

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